KR102430853B1 - 기준 전압 회로 및 반도체 장치 - Google Patents

기준 전압 회로 및 반도체 장치 Download PDF

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Publication number
KR102430853B1
KR102430853B1 KR1020180061873A KR20180061873A KR102430853B1 KR 102430853 B1 KR102430853 B1 KR 102430853B1 KR 1020180061873 A KR1020180061873 A KR 1020180061873A KR 20180061873 A KR20180061873 A KR 20180061873A KR 102430853 B1 KR102430853 B1 KR 102430853B1
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KR
South Korea
Prior art keywords
transistor
reference voltage
voltage circuit
transistors
depletion
Prior art date
Application number
KR1020180061873A
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English (en)
Korean (ko)
Other versions
KR20180131980A (ko
Inventor
마사카즈 스기우라
후미히코 마에타니
Original Assignee
에이블릭 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2018060317A external-priority patent/JP7075172B2/ja
Application filed by 에이블릭 가부시키가이샤 filed Critical 에이블릭 가부시키가이샤
Publication of KR20180131980A publication Critical patent/KR20180131980A/ko
Application granted granted Critical
Publication of KR102430853B1 publication Critical patent/KR102430853B1/ko

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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/205—Substrate bias-voltage generators
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/262—Current mirrors using field-effect transistors only
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/265—Current mirrors using bipolar transistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/0883—Combination of depletion and enhancement field effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
  • Electromagnetism (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Nonlinear Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Control Of Electrical Variables (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1020180061873A 2017-06-01 2018-05-30 기준 전압 회로 및 반도체 장치 KR102430853B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2017109043 2017-06-01
JPJP-P-2017-109043 2017-06-01
JPJP-P-2018-060317 2018-03-27
JP2018060317A JP7075172B2 (ja) 2017-06-01 2018-03-27 基準電圧回路及び半導体装置

Publications (2)

Publication Number Publication Date
KR20180131980A KR20180131980A (ko) 2018-12-11
KR102430853B1 true KR102430853B1 (ko) 2022-08-09

Family

ID=64458282

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020180061873A KR102430853B1 (ko) 2017-06-01 2018-05-30 기준 전압 회로 및 반도체 장치

Country Status (3)

Country Link
KR (1) KR102430853B1 (zh)
CN (1) CN108983857A (zh)
TW (1) TWI751335B (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102130322B1 (ko) * 2019-01-03 2020-07-06 청주대학교 산학협력단 박막 트랜지스터 논리회로 및 그 제조방법
JP2020177393A (ja) * 2019-04-17 2020-10-29 エイブリック株式会社 定電流回路及び半導体装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020036488A1 (en) * 2000-06-23 2002-03-28 Yoshinori Ueda Voltage reference generation circuit and power source incorporating such circuit
JP2009021360A (ja) * 2007-07-11 2009-01-29 Mitsumi Electric Co Ltd Ｍｏｓトランジスタ及びこれを用いたｍｏｓトランジスタ回路

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Publication number Priority date Publication date Assignee Title
GB2034937B (en) * 1978-11-14 1983-01-06 Philips Electronic Associated Regulated power supply
US6005378A (en) * 1998-03-05 1999-12-21 Impala Linear Corporation Compact low dropout voltage regulator using enhancement and depletion mode MOS transistors
JP3523521B2 (ja) * 1998-04-09 2004-04-26 松下電器産業株式会社 Ｍｏｓトランジスタ対装置
US6265857B1 (en) * 1998-12-22 2001-07-24 International Business Machines Corporation Constant current source circuit with variable temperature compensation
CN100543999C (zh) * 2000-09-01 2009-09-23 精工电子有限公司 Cmos半导体器件及其制造方法
JP4397211B2 (ja) * 2003-10-06 2010-01-13 株式会社リコー 基準電圧発生回路及びそれを用いた電源装置
JP2008004796A (ja) * 2006-06-23 2008-01-10 Matsushita Electric Ind Co Ltd 半導体装置および回路素子レイアウト方法
CN100492245C (zh) * 2007-07-11 2009-05-27 中国电子科技集团公司第二十四研究所 一种高电源抑制比的nmos基准电压源
KR101465598B1 (ko) * 2008-06-05 2014-12-15 삼성전자주식회사 기준 전압 발생 장치 및 방법
JP5511166B2 (ja) * 2008-09-10 2014-06-04 セイコーインスツル株式会社 半導体装置
US7772920B1 (en) * 2009-05-29 2010-08-10 Linear Technology Corporation Low thermal hysteresis bandgap voltage reference
TWI453567B (zh) 2009-06-26 2014-09-21 Univ Michigan 微微功率參考電壓產生器
JP2014187082A (ja) * 2013-03-22 2014-10-02 Hitachi Ltd 半導体装置
CN104181971B (zh) * 2013-05-24 2015-11-25 比亚迪股份有限公司 一种基准电压源
JP6193771B2 (ja) * 2014-01-28 2017-09-06 ルネサスエレクトロニクス株式会社 半導体装置
US9537338B2 (en) * 2014-09-16 2017-01-03 Navitas Semiconductor Inc. Level shift and inverter circuits for GaN devices

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020036488A1 (en) * 2000-06-23 2002-03-28 Yoshinori Ueda Voltage reference generation circuit and power source incorporating such circuit
JP2009021360A (ja) * 2007-07-11 2009-01-29 Mitsumi Electric Co Ltd Ｍｏｓトランジスタ及びこれを用いたｍｏｓトランジスタ回路

Also Published As

Publication number Publication date
CN108983857A (zh) 2018-12-11
TWI751335B (zh) 2022-01-01
TW201911533A (zh) 2019-03-16
KR20180131980A (ko) 2018-12-11

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GRNT Written decision to grant