JPS55143061A - Integrated circuit - Google Patents

Integrated circuit

Info

Publication number
JPS55143061A
JPS55143061A JP5029179A JP5029179A JPS55143061A JP S55143061 A JPS55143061 A JP S55143061A JP 5029179 A JP5029179 A JP 5029179A JP 5029179 A JP5029179 A JP 5029179A JP S55143061 A JPS55143061 A JP S55143061A
Authority
JP
Japan
Prior art keywords
oxide film
protective
internal circuit
substrate
checking
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5029179A
Other languages
Japanese (ja)
Inventor
Osamu Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP5029179A priority Critical patent/JPS55143061A/en
Publication of JPS55143061A publication Critical patent/JPS55143061A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To make utilization efficiency high in a chip by a method wherein, in a protective circuit element which is fabricated in the common process as other internal circuit elements, a terminal for checking characteristic is provided and diagnosis of internal circuit may be performed by checking the protective circuit element. CONSTITUTION:A field oxide film 12 is formed on the surface of an n-type Si substrate 10, and an MOSFETQ which is a part of an internal circuit is formed on the surface of the substrate within the first opening of an oxide film 12, and a protective doide D is formed on the surface of the substrate within the second opening of the oxide film 12, and a protective resistance layer R is formed on the oxide film 12. And to diagnose characteristic of an internal circuit including the MOSFETQ, resistance value, junction leakage etc. can be checked easily by checking time constant of RC circuit which consists of a resistance layer 18 (R) and a diffused layer 24 of a diode D. Thus provision of any special dummy element is not necessary and efficiency of utilization is improved.
JP5029179A 1979-04-25 1979-04-25 Integrated circuit Pending JPS55143061A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5029179A JPS55143061A (en) 1979-04-25 1979-04-25 Integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5029179A JPS55143061A (en) 1979-04-25 1979-04-25 Integrated circuit

Publications (1)

Publication Number Publication Date
JPS55143061A true JPS55143061A (en) 1980-11-08

Family

ID=12854800

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5029179A Pending JPS55143061A (en) 1979-04-25 1979-04-25 Integrated circuit

Country Status (1)

Country Link
JP (1) JPS55143061A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0102647A2 (en) * 1982-09-07 1984-03-14 Kabushiki Kaisha Toshiba Input protection device for C-MOS device
US4763184A (en) * 1985-04-30 1988-08-09 Waferscale Integration, Inc. Input circuit for protecting against damage caused by electrostatic discharge
JPS63220537A (en) * 1987-03-09 1988-09-13 Nec Corp Semiconductor substrate
US4777518A (en) * 1982-01-11 1988-10-11 Nissan Motor Company, Limited Semiconductor device including gate protection circuit with capacitor under input pad
JPS6419739A (en) * 1988-06-24 1989-01-23 Hitachi Ltd Semiconductor integrated circuit device
JPS6427241A (en) * 1988-06-24 1989-01-30 Hitachi Ltd Semiconductor integrated circuit device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4777518A (en) * 1982-01-11 1988-10-11 Nissan Motor Company, Limited Semiconductor device including gate protection circuit with capacitor under input pad
EP0102647A2 (en) * 1982-09-07 1984-03-14 Kabushiki Kaisha Toshiba Input protection device for C-MOS device
US4872045A (en) * 1982-09-07 1989-10-03 Tokyo Shibaura Denki Kabushiki Kaisha Input protection device for C-MOS device
US4763184A (en) * 1985-04-30 1988-08-09 Waferscale Integration, Inc. Input circuit for protecting against damage caused by electrostatic discharge
JPS63220537A (en) * 1987-03-09 1988-09-13 Nec Corp Semiconductor substrate
JPS6419739A (en) * 1988-06-24 1989-01-23 Hitachi Ltd Semiconductor integrated circuit device
JPS6427241A (en) * 1988-06-24 1989-01-30 Hitachi Ltd Semiconductor integrated circuit device

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