JPS5459078A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5459078A
JPS5459078A JP12613877A JP12613877A JPS5459078A JP S5459078 A JPS5459078 A JP S5459078A JP 12613877 A JP12613877 A JP 12613877A JP 12613877 A JP12613877 A JP 12613877A JP S5459078 A JPS5459078 A JP S5459078A
Authority
JP
Japan
Prior art keywords
film
poly
eutectic
films
constitution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12613877A
Other languages
Japanese (ja)
Other versions
JPS5758773B2 (en
Inventor
Kazuhiko Tsuji
Shuji Kondo
Takashi Osone
Shiro Horiuchi
Masaharu Noyori
Tsuyoshi Shiragasawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP12613877A priority Critical patent/JPS5459078A/en
Publication of JPS5459078A publication Critical patent/JPS5459078A/en
Publication of JPS5758773B2 publication Critical patent/JPS5758773B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: To eliminate the defect factor caused by the eutectic of Al and Si with no increment of the element area and the number of the manufacturing processes for IC.
CONSTITUTION: An opening is provided to gate oxide film 13 on p-type Si substrate 11, and films 17W19 are formed selectively to cover gete electrode 20 and part of the opening via poly Si. The phosphorus diffusion is then applied on the entire surface, and thus N-layer 21 is formed with films 17W19 turned to high conductors. Remaining film 13 is removed using film 20 as the mask, and shallow layers 22W24 are formed through the phosphorus diffusion. Thus, deep layers 21aW21c are obtained. Then the surface is covered with low-temperature oxide film 25 with openings drilled selectively to form Al wirings 26W27. In such constitution, the wiring short circuit caused by the eutectic of Al and Si can be eliminated due to existence of poly Si, and a high density is ensured since no measurement margin is required around the connection between the wiring and the diffusion layer. In addition, the poly Si film can be formed simultaneously with formation of the gate electrode, thus decreasing the number of the manufacturing processes
COPYRIGHT: (C)1979,JPO&Japio
JP12613877A 1977-10-19 1977-10-19 Manufacture of semiconductor device Granted JPS5459078A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12613877A JPS5459078A (en) 1977-10-19 1977-10-19 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12613877A JPS5459078A (en) 1977-10-19 1977-10-19 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5459078A true JPS5459078A (en) 1979-05-12
JPS5758773B2 JPS5758773B2 (en) 1982-12-11

Family

ID=14927604

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12613877A Granted JPS5459078A (en) 1977-10-19 1977-10-19 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5459078A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56130919A (en) * 1980-03-17 1981-10-14 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS56130965A (en) * 1980-03-17 1981-10-14 Matsushita Electric Ind Co Ltd Semiconductor device and manufacture thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56130919A (en) * 1980-03-17 1981-10-14 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS56130965A (en) * 1980-03-17 1981-10-14 Matsushita Electric Ind Co Ltd Semiconductor device and manufacture thereof

Also Published As

Publication number Publication date
JPS5758773B2 (en) 1982-12-11

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