JPS5459078A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5459078A JPS5459078A JP12613877A JP12613877A JPS5459078A JP S5459078 A JPS5459078 A JP S5459078A JP 12613877 A JP12613877 A JP 12613877A JP 12613877 A JP12613877 A JP 12613877A JP S5459078 A JPS5459078 A JP S5459078A
- Authority
- JP
- Japan
- Prior art keywords
- film
- poly
- eutectic
- films
- constitution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE: To eliminate the defect factor caused by the eutectic of Al and Si with no increment of the element area and the number of the manufacturing processes for IC.
CONSTITUTION: An opening is provided to gate oxide film 13 on p-type Si substrate 11, and films 17W19 are formed selectively to cover gete electrode 20 and part of the opening via poly Si. The phosphorus diffusion is then applied on the entire surface, and thus N-layer 21 is formed with films 17W19 turned to high conductors. Remaining film 13 is removed using film 20 as the mask, and shallow layers 22W24 are formed through the phosphorus diffusion. Thus, deep layers 21aW21c are obtained. Then the surface is covered with low-temperature oxide film 25 with openings drilled selectively to form Al wirings 26W27. In such constitution, the wiring short circuit caused by the eutectic of Al and Si can be eliminated due to existence of poly Si, and a high density is ensured since no measurement margin is required around the connection between the wiring and the diffusion layer. In addition, the poly Si film can be formed simultaneously with formation of the gate electrode, thus decreasing the number of the manufacturing processes
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12613877A JPS5459078A (en) | 1977-10-19 | 1977-10-19 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12613877A JPS5459078A (en) | 1977-10-19 | 1977-10-19 | Manufacture of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5459078A true JPS5459078A (en) | 1979-05-12 |
JPS5758773B2 JPS5758773B2 (en) | 1982-12-11 |
Family
ID=14927604
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12613877A Granted JPS5459078A (en) | 1977-10-19 | 1977-10-19 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5459078A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56130919A (en) * | 1980-03-17 | 1981-10-14 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
JPS56130965A (en) * | 1980-03-17 | 1981-10-14 | Matsushita Electric Ind Co Ltd | Semiconductor device and manufacture thereof |
-
1977
- 1977-10-19 JP JP12613877A patent/JPS5459078A/en active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56130919A (en) * | 1980-03-17 | 1981-10-14 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
JPS56130965A (en) * | 1980-03-17 | 1981-10-14 | Matsushita Electric Ind Co Ltd | Semiconductor device and manufacture thereof |
Also Published As
Publication number | Publication date |
---|---|
JPS5758773B2 (en) | 1982-12-11 |
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