JPS56107572A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS56107572A
JPS56107572A JP125681A JP125681A JPS56107572A JP S56107572 A JPS56107572 A JP S56107572A JP 125681 A JP125681 A JP 125681A JP 125681 A JP125681 A JP 125681A JP S56107572 A JPS56107572 A JP S56107572A
Authority
JP
Japan
Prior art keywords
buried
layer
type
domain
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP125681A
Other languages
Japanese (ja)
Other versions
JPS6031107B2 (en
Inventor
Tomoyuki Watabe
Takahiro Okabe
Yoshito Omura
Hiroshi Kodera
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56001256A priority Critical patent/JPS6031107B2/en
Publication of JPS56107572A publication Critical patent/JPS56107572A/en
Publication of JPS6031107B2 publication Critical patent/JPS6031107B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]
    • H01L27/0244—I2L structures integrated in combination with analog structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Logic Circuits (AREA)

Abstract

PURPOSE:To form a high pressure resisting element and an integrated injection logical circuit on the same chip by forming a buried layer of an island domain in which a counter transistor is formed nearer to the surface than a buried layer of an island domain in which other transistor is formed. CONSTITUTION:N<+> buried layers 4, 4' are formed by diffusing antimony or arsenic selectively on a P type semiconductor substrate 1. Next, after diffusing phosphorus quick in diffusion on the buried domain 4' in which to form an injection logical circuit (I<2>L), an N type epitaxial layer 5 and P<+> type isolation diffused layers 6, 6', 6'' and formed. From forming a P type layer 7 and an N<+> type layer 8 after that, the N<+> buried domain 4' in which to form I<2>L comes near to the bottom of the P type layer 7. An injection efficiency of a transistor to constitute I<2>L is improved to obtain I<2>L superior in characteristic, and I<2>L can be formed on the same chip as other high pressure resisting transistors.
JP56001256A 1981-01-09 1981-01-09 Semiconductor integrated circuit device Expired JPS6031107B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56001256A JPS6031107B2 (en) 1981-01-09 1981-01-09 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56001256A JPS6031107B2 (en) 1981-01-09 1981-01-09 Semiconductor integrated circuit device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP50041337A Division JPS51116687A (en) 1975-04-07 1975-04-07 Semiconductor integrated circuit device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP58220628A Division JPS59130458A (en) 1983-11-25 1983-11-25 Semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS56107572A true JPS56107572A (en) 1981-08-26
JPS6031107B2 JPS6031107B2 (en) 1985-07-20

Family

ID=11496372

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56001256A Expired JPS6031107B2 (en) 1981-01-09 1981-01-09 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS6031107B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59130458A (en) * 1983-11-25 1984-07-27 Hitachi Ltd Semiconductor integrated circuit
JPS6425566A (en) * 1987-07-22 1989-01-27 Tokai Rika Co Ltd Manufacture of semiconductor integrated circuit
JPH04226002A (en) * 1991-04-30 1992-08-14 Matsushita Electric Ind Co Ltd Fine pitch independent resistance circuit

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5161786A (en) * 1974-11-27 1976-05-28 Hitachi Ltd
JPS51107779A (en) * 1975-02-19 1976-09-24 Siemens Ag

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5161786A (en) * 1974-11-27 1976-05-28 Hitachi Ltd
JPS51107779A (en) * 1975-02-19 1976-09-24 Siemens Ag

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59130458A (en) * 1983-11-25 1984-07-27 Hitachi Ltd Semiconductor integrated circuit
JPS6425566A (en) * 1987-07-22 1989-01-27 Tokai Rika Co Ltd Manufacture of semiconductor integrated circuit
JPH04226002A (en) * 1991-04-30 1992-08-14 Matsushita Electric Ind Co Ltd Fine pitch independent resistance circuit

Also Published As

Publication number Publication date
JPS6031107B2 (en) 1985-07-20

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