JPS57142014A - Limiter circuit - Google Patents

Limiter circuit

Info

Publication number
JPS57142014A
JPS57142014A JP56029122A JP2912281A JPS57142014A JP S57142014 A JPS57142014 A JP S57142014A JP 56029122 A JP56029122 A JP 56029122A JP 2912281 A JP2912281 A JP 2912281A JP S57142014 A JPS57142014 A JP S57142014A
Authority
JP
Japan
Prior art keywords
type
silicon
diodes
stopper layer
junction diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56029122A
Other languages
Japanese (ja)
Inventor
Toshiyuki Misawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP56029122A priority Critical patent/JPS57142014A/en
Publication of JPS57142014A publication Critical patent/JPS57142014A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G11/00—Limiting amplitude; Limiting rate of change of amplitude ; Clipping in general
    • H03G11/02—Limiting amplitude; Limiting rate of change of amplitude ; Clipping in general by means of diodes

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Tone Control, Compression And Expansion, Limiting Amplitude (AREA)

Abstract

PURPOSE:To enable the application to an integrated circuit using MOS process, by forming a P-N junction diode consisting of a P type polycrystal silicon and an N type polycrystal silicon in floating state. CONSTITUTION:A stopper layer 402 of the same polarity as a substrate polarity is formed on a semiconductor substrate 401. A field oxide film 403 is formed on the stopper layer 402 and a junction diode consisting of a P type silicon 404 and an N type silicon 405 is made. N sets of junction diodes can successively be made depending on the required limiter characteristics. This manufacturing process is well suited to the manufacture process of a complementary MOS IC, and since the diodes can be manufactured in floating, monolithic circuit integration can easily be done together with operational amplifiers.
JP56029122A 1981-02-27 1981-02-27 Limiter circuit Pending JPS57142014A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56029122A JPS57142014A (en) 1981-02-27 1981-02-27 Limiter circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56029122A JPS57142014A (en) 1981-02-27 1981-02-27 Limiter circuit

Publications (1)

Publication Number Publication Date
JPS57142014A true JPS57142014A (en) 1982-09-02

Family

ID=12267496

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56029122A Pending JPS57142014A (en) 1981-02-27 1981-02-27 Limiter circuit

Country Status (1)

Country Link
JP (1) JPS57142014A (en)

Similar Documents

Publication Publication Date Title
JPS5563840A (en) Semiconductor integrated device
EP0349021A3 (en) Semiconductor device and method of manufacturing the same
JPS52156580A (en) Semiconductor integrated circuit device and its production
JPS57142014A (en) Limiter circuit
JPS56115557A (en) Manufacture of semiconductor device
JPS55143061A (en) Integrated circuit
JPS56107572A (en) Semiconductor integrated circuit device
JPS6489457A (en) Manufacture of semiconductor device
JPS6481352A (en) Semiconductor integrated circuit device placed with bipolar cmos in mixture
JPS57143855A (en) Semiconductor integrated circuit device
JPS55146964A (en) Manufacture of semiconductor device
JPS57104253A (en) Semiconductor memory device
JPS5721853A (en) Semiconductor device
JPS51150282A (en) Semiconductor device and manufacturing method thereof
JPS5789239A (en) Semiconductor integrated circuit
JPS5715466A (en) Semiconductor device
JPS55103761A (en) Semiconductor device
JPS55111169A (en) Method of manufacturing semiconductor device
JPS5655078A (en) Semiconductor device
JPS56110260A (en) Semiconductor device
JPS558069A (en) Manufacture of semiconductor
JPS5556644A (en) Manufacture of semiconductor integrated circuit
JPS5687355A (en) Semiconductor device
JPS5346287A (en) Production of semiconductor integrated circuit
JPS6428926A (en) Semiconductor device