JP6882420B2 - 基板ホルダ及び基板ホルダ製造方法 - Google Patents
基板ホルダ及び基板ホルダ製造方法 Download PDFInfo
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- JP6882420B2 JP6882420B2 JP2019194121A JP2019194121A JP6882420B2 JP 6882420 B2 JP6882420 B2 JP 6882420B2 JP 2019194121 A JP2019194121 A JP 2019194121A JP 2019194121 A JP2019194121 A JP 2019194121A JP 6882420 B2 JP6882420 B2 JP 6882420B2
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- B22F10/20—Direct sintering or melting
- B22F10/28—Powder bed fusion, e.g. selective laser melting [SLM] or electron beam melting [EBM]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F10/00—Additive manufacturing of workpieces or articles from metallic powder
- B22F10/60—Treatment of workpieces or articles after build-up
- B22F10/66—Treatment of workpieces or articles after build-up by mechanical means
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P10/00—Technologies related to metal processing
- Y02P10/25—Process efficiency
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- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Optics & Photonics (AREA)
- Materials Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Plasma & Fusion (AREA)
- Health & Medical Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Composite Materials (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Magnetic Heads (AREA)
Description
[0001] 本出願は、2012年2月3日出願の米国仮出願第61/594,857号、2012年4月9日出願の米国仮出願第61/621,648号及び2012年4月9日出願の米国仮出願第61/621,660号の利益を主張し、その全体を参照により本明細書に組み込むものとする。
[0031] −放射ビームB(例えばUV放射、DUV放射又はEUV放射)を調節するように構成された照明システム(イルミネータ)ILと、
[0032] −パターニングデバイス(例えばマスク)MAを支持するように構築され、特定のパラメータに従ってパターニングデバイスを正確に位置決めするように構成された第1のポジショナPMに接続された支持構造(例えばマスクテーブル)MTと、
[0033] −基板(例えばレジストコートウェーハ)Wを保持するように構築され、特定のパラメータに従って基板を正確に位置決めするように構成された第2のポジショナPWに接続された基板テーブル(例えばウェーハテーブル)WTと、
[0034] −パターニングデバイスMAによって放射ビームBに与えられたパターンを基板Wの目標部分C(例えば1つ以上のダイを含む)に投影するように構成された投影システム(例えば屈折投影レンズシステム)PSと、を備える。
−放射ビームB(例えばEUV放射)を調節するように構成された照明システム(イルミネータ)EILと、
−パターニングデバイス(例えばマスク又はレチクル)MAを支持するように構築され、パターニングデバイスを正確に位置決めするように構成された第1のポジショナPMに接続された支持構造(例えばマスクテーブル)MTと、
−基板(例えばレジストコートウェーハ)Wを保持するように構築され、基板を正確に位置決めするように構成された第2のポジショナPWに接続された基板テーブル(例えばウェーハテーブル)WTと、
−パターニングデバイスMAによって放射ビームBに与えられたパターンを基板Wのターゲット部分C(例えば1つ以上のダイを含む)に投影するように構成された投影システム(例えば反射投影システム)PSと、を備える。
Claims (15)
- リソグラフィ装置で使用する基板ホルダであって、
第1の面及び前記第1の面と反対の第2の面を有する本体と、
前記第1の面上に提供され、基板を支持する端面を有する複数の第1のバールと、
前記第2の面上に提供され、構造上の前記基板ホルダを支持する複数の第2のバールと、を備え、
前記複数の第1のバールの各々が、前記第1の面から突き出している下側本体部分及び前記下側本体部分の上方の上側本体部分を備え、前記下側本体部分が、前記上側本体部分と異なる材料を含み、前記上側本体部分が、ダイヤモンドライクカーボンを含む、基板ホルダ。 - 前記本体が、前記バールと異なる材料で形成される、請求項1に記載の基板ホルダ。
- 前記本体が、コージェライト、SiC、AIN、SiSiC、セラミック及びガラスセラミックからなる群から選択した少なくとも1つの材料を含む、請求項1又は2に記載の基板ホルダ。
- 前記複数の第1のバール間の間隔及び/又は前記複数の第2のバール間の間隔が、1.5mm〜3mmの間である、請求項1〜3のいずれか一項に記載の基板ホルダ。
- 前記複数の第1のバール及び/又は前記複数の第2のバールが、200μm〜500μmの範囲の直径を有する、請求項1〜4のいずれか一項に記載の基板ホルダ。
- 前記下側本体部分が、SiC、SiO2、TiN及びCrNからなる群から選択した少なくとも1つの材料を含む、請求項1〜5のいずれか一項に記載の基板ホルダ。
- 前記上側本体部分が、ダイヤモンドライクカーボンによって互いに接続されないように互いに離れている、請求項1〜6のいずれか一項に記載の基板ホルダ。
- 前記基板ホルダが、複合材料をさらに含み、前記複合材料が、前記第1の面及び前記第2の面のうちの少なくとも1つにおいて、(i)ダイヤモンド粒子を含む粒子成分、及び(ii)前記粒子成分を有するマトリクス成分を含む、請求項1〜7のいずれか一項に記載の基板ホルダ。
- 前記本体が前記複合材料で形成され、前記第1の面における前記ダイヤモンド粒子が、前記基板に接触するように配置される、請求項8に記載の基板ホルダ。
- 前記マトリクス成分が、炭化ケイ素を含む、請求項8又は9に記載の基板ホルダ。
- 少なくとも前記本体との熱伝導を可能にする熱伝達構造をさらに備える、請求項1〜10のいずれか一項に記載の基板ホルダ。
- 前記基板ホルダ及び/又は前記基板の温度を監視する少なくとも1つのセンサをさらに備える、請求項1〜11のいずれか一項に記載の基板ホルダ。
- 前記第1の面及び前記第2の面のうちの少なくとも1つの上に形成された薄膜コンポーネントをさらに備える、請求項1〜12のいずれか一項に記載の基板ホルダ。
- 前記薄膜コンポーネントの層の厚さが、2nm〜100μmの範囲である、請求項13に記載の基板ホルダ。
- 請求項1〜14のいずれか一項に記載の前記基板ホルダを備えるリソグラフィ装置。
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