JP5731485B2 - ポリマー突起を有する静電チャック - Google Patents
ポリマー突起を有する静電チャック Download PDFInfo
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- JP5731485B2 JP5731485B2 JP2012511001A JP2012511001A JP5731485B2 JP 5731485 B2 JP5731485 B2 JP 5731485B2 JP 2012511001 A JP2012511001 A JP 2012511001A JP 2012511001 A JP2012511001 A JP 2012511001A JP 5731485 B2 JP5731485 B2 JP 5731485B2
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- 229920001601 polyetherimide Polymers 0.000 claims description 38
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- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 23
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- 230000001070 adhesive effect Effects 0.000 claims description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 20
- 229910052710 silicon Inorganic materials 0.000 claims description 20
- 239000010703 silicon Substances 0.000 claims description 20
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- 229920009441 perflouroethylene propylene Polymers 0.000 claims description 12
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- 239000012790 adhesive layer Substances 0.000 claims description 10
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- 150000004767 nitrides Chemical class 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 7
- 229910052799 carbon Inorganic materials 0.000 claims description 7
- HQQADJVZYDDRJT-UHFFFAOYSA-N ethene;prop-1-ene Chemical group C=C.CC=C HQQADJVZYDDRJT-UHFFFAOYSA-N 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 150000001247 metal acetylides Chemical class 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- JMANVNJQNLATNU-UHFFFAOYSA-N oxalonitrile Chemical class N#CC#N JMANVNJQNLATNU-UHFFFAOYSA-N 0.000 claims 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 claims 1
- 239000007789 gas Substances 0.000 description 23
- 239000002245 particle Substances 0.000 description 14
- 235000012431 wafers Nutrition 0.000 description 12
- 238000000576 coating method Methods 0.000 description 10
- 239000011248 coating agent Substances 0.000 description 9
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
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- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 238000001816 cooling Methods 0.000 description 4
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- 238000012545 processing Methods 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
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- 239000004593 Epoxy Substances 0.000 description 2
- 229920004695 VICTREX™ PEEK Polymers 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 229920004747 ULTEM® 1000 Polymers 0.000 description 1
- 239000000112 cooling gas Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
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- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
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- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
- B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
- B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Jigs For Machine Tools (AREA)
Description
Claims (17)
- 静電チャックにおいて、
基板を前記静電チャックに静電的にクランプする目的で電荷を形成するために電極内の電圧によって活性化される表面層を備えており、前記表面層は、複数のポリマー突起と、前記複数のポリマー突起が接着する電荷制御層と、を含んでおり、前記電荷制御層は、ポリマー電荷制御層であり、約10 8 オーム/□から約10 11 オーム/□の間の表面抵抗率を有し、前記複数のポリマー突起は、前記基板の静電クランプの間、前記基板を前記複数のポリマー突起上で支持するために前記複数のポリマー突起を取り囲む前記電荷制御層の一部より上方の高さまで伸張している、静電チャック。 - 前記複数のポリマー突起を構成するポリマーは、ポリエーテルイミド(PEI)、ポリエーテルエーテルケトン(PEEK)、またはポリイミドを備えている、請求項1に記載の静電チャック。
- 前記電荷制御層は、ポリエーテルイミド(PEI)でできている、請求項2に記載の静電チャック。
- 前記電荷制御層は、ポリエーテルイミド(PEI)、ポリエーテルエーテルケトン(PEEK)、またはポリイミドでできている、請求項1に記載の静電チャック。
- 前記電荷制御層の下にある接着剤層を更に備えている、請求項1に記載の静電チャック。
- 前記接着剤層は、ポリエーテルイミド(PEI)を備えている、請求項5に記載の静電チャック。
- 前記静電チャックの誘電体層上に形成された接着被覆層を更に備え、該接着被覆層は、接着剤層の上方にある1つ以上のポリマー層の誘電体層への接着を促進し、接着剤層の上方にある1つ以上のポリマー層は、電荷制御層を備える、請求項1に記載の静電チャック。
- 前記接着被覆層は、ケイ素を含有する窒化物、ケイ素を含有する酸化物、ケイ素を含有する炭化物、非化学量論的ケイ素を含有する窒化物、非化学量論的ケイ素を含有する酸化物、非化学量論的ケイ素を含有する炭化物、炭素及び炭素の窒化化合物の少なくとも1つを備えている、請求項7に記載の静電チャック。
- 前記接着被覆層は、SiOxNy、窒化ケイ素、酸化ケイ素、炭化ケイ素及びダイヤモンド様炭素の少なくとも1つを備えている、請求項8に記載の静電チャック。
- 前記接着被覆層は、前記静電チャックの縁の少なくとも一部の周囲を取り囲む金属還元層を備えるように伸張している、請求項7に記載の静電チャック。
- 前記静電チャックの誘電体層を前記静電チャックの絶縁層に接合するセラミック対セラミックの接合層を更に備えており、前記セラミック対セラミック接合層は、ポリマーを備えている、請求項1に記載の静電チャック。
- 前記セラミック対セラミック接合層に含まれるポリマーは、ポリテトラフルオロエチレン(PTFE)及び変性ポリテトラフルオロエチレン(PTFE)の少なくとも1つを備え、または前記セラミック対セラミック接合層に含まれるポリマーは、ペルフルオロアルコキシ(PFA)、フッ素化エチレンプロピレン(FEP)及びポリエーテルエーテルケトン(PEEK)の少なくとも1つを備えている、請求項11に記載の静電チャック。
- 前記変性ポリテトラフルオロエチレン(PTFE)は、ペルフルオロアルコキシ(PFA)及びフッ素化エチレンプロピレン(FEP)の少なくとも1つを備えている、請求項12に記載の静電チャック。
- ポリマーを備えるガスシールリングを更に備えている、請求項1に記載の静電チャック。
- 前記ガスシールリングは、ポリエーテルイミド(PEI)、ポリイミド及びポリエーテルエーテルケトン(PEEK)の少なくとも1つを備えている、請求項14に記載の静電チャック。
- 前記複数のポリマー突起を構成する前記ポリマーは、ポリエーテルイミド(PEI)を備えており、前記電荷制御層は、ポリエーテルイミド(PEI)でできており、前記静電チャックは、ケイ素を含有する窒化物、ケイ素を含有する酸化物、ケイ素を含有する炭化物、非化学量論的ケイ素を含有する窒化物、非化学量論的ケイ素を含有する酸化物、非化学量論的ケイ素を含有する炭化物、炭素及び炭素の窒化化合物の少なくとも1つを備える、接着被覆層を備えている、請求項1に記載の静電チャック。
- 前記静電チャックの誘電体層を前記静電チャックの絶縁層に接合するセラミック対セラミックの接合層を更に備えており、前記セラミック対セラミックの接合層は、ポリテトラフルオロエチレン(PTFE)及び変性ポリテトラフルオロエチレン(PTFE)の少なくとも1つを備えている、請求項16に記載の静電チャック。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US21630509P | 2009-05-15 | 2009-05-15 | |
US61/216,305 | 2009-05-15 | ||
PCT/US2010/034667 WO2010132640A2 (en) | 2009-05-15 | 2010-05-13 | Electrostatic chuck with polymer protrusions |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015079373A Division JP5945616B2 (ja) | 2009-05-15 | 2015-04-08 | ポリマー突起を有する静電チャック |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2012527125A JP2012527125A (ja) | 2012-11-01 |
JP2012527125A5 JP2012527125A5 (ja) | 2013-06-27 |
JP5731485B2 true JP5731485B2 (ja) | 2015-06-10 |
Family
ID=43085578
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
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JP2012511001A Active JP5731485B2 (ja) | 2009-05-15 | 2010-05-13 | ポリマー突起を有する静電チャック |
JP2015079373A Active JP5945616B2 (ja) | 2009-05-15 | 2015-04-08 | ポリマー突起を有する静電チャック |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
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JP2015079373A Active JP5945616B2 (ja) | 2009-05-15 | 2015-04-08 | ポリマー突起を有する静電チャック |
Country Status (8)
Country | Link |
---|---|
US (1) | US8879233B2 (ja) |
EP (1) | EP2430654B1 (ja) |
JP (2) | JP5731485B2 (ja) |
KR (1) | KR101680787B1 (ja) |
CN (1) | CN102449754B (ja) |
SG (2) | SG176059A1 (ja) |
TW (2) | TWI534945B (ja) |
WO (1) | WO2010132640A2 (ja) |
Families Citing this family (32)
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TWI475594B (zh) | 2008-05-19 | 2015-03-01 | Entegris Inc | 靜電夾頭 |
JP5731485B2 (ja) | 2009-05-15 | 2015-06-10 | インテグリス・インコーポレーテッド | ポリマー突起を有する静電チャック |
US8861170B2 (en) | 2009-05-15 | 2014-10-14 | Entegris, Inc. | Electrostatic chuck with photo-patternable soft protrusion contact surface |
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WO2009013803A1 (ja) | 2007-07-23 | 2009-01-29 | Shin-Etsu Engineering Co., Ltd. | 静電チャックの表面電位制御方法 |
TWI475594B (zh) | 2008-05-19 | 2015-03-01 | Entegris Inc | 靜電夾頭 |
JP5731485B2 (ja) | 2009-05-15 | 2015-06-10 | インテグリス・インコーポレーテッド | ポリマー突起を有する静電チャック |
US8861170B2 (en) | 2009-05-15 | 2014-10-14 | Entegris, Inc. | Electrostatic chuck with photo-patternable soft protrusion contact surface |
KR101731136B1 (ko) | 2010-05-28 | 2017-04-27 | 엔테그리스, 아이엔씨. | 표면저항이 높은 정전 척 |
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- 2010-05-13 CN CN201080019939.2A patent/CN102449754B/zh active Active
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KR101680787B1 (ko) | 2016-11-29 |
EP2430654A2 (en) | 2012-03-21 |
CN102449754A (zh) | 2012-05-09 |
TWI496240B (zh) | 2015-08-11 |
SG176059A1 (en) | 2011-12-29 |
TW201101416A (en) | 2011-01-01 |
TW201539644A (zh) | 2015-10-16 |
KR20120025464A (ko) | 2012-03-15 |
EP2430654B1 (en) | 2019-12-25 |
JP2012527125A (ja) | 2012-11-01 |
WO2010132640A3 (en) | 2011-03-31 |
US20120044609A1 (en) | 2012-02-23 |
JP5945616B2 (ja) | 2016-07-05 |
CN102449754B (zh) | 2015-10-21 |
EP2430654A4 (en) | 2013-12-04 |
US8879233B2 (en) | 2014-11-04 |
SG10201402319QA (en) | 2014-07-30 |
WO2010132640A2 (en) | 2010-11-18 |
TWI534945B (zh) | 2016-05-21 |
JP2015159310A (ja) | 2015-09-03 |
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