JP6812758B2 - ショットキーバリアダイオード及びこれを備える電子回路 - Google Patents
ショットキーバリアダイオード及びこれを備える電子回路 Download PDFInfo
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- JP6812758B2 JP6812758B2 JP2016218652A JP2016218652A JP6812758B2 JP 6812758 B2 JP6812758 B2 JP 6812758B2 JP 2016218652 A JP2016218652 A JP 2016218652A JP 2016218652 A JP2016218652 A JP 2016218652A JP 6812758 B2 JP6812758 B2 JP 6812758B2
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- 230000004888 barrier function Effects 0.000 title claims description 62
- 239000000758 substrate Substances 0.000 claims description 59
- 239000004065 semiconductor Substances 0.000 claims description 58
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims description 23
- 229910001195 gallium oxide Inorganic materials 0.000 claims description 22
- 229910000679 solder Inorganic materials 0.000 description 14
- 230000017525 heat dissipation Effects 0.000 description 11
- 239000010408 film Substances 0.000 description 9
- 230000020169 heat generation Effects 0.000 description 9
- 238000000034 method Methods 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
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- H01L2924/10155—Shape being other than a cuboid
- H01L2924/10158—Shape being other than a cuboid at the passive surface
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- Condensed Matter Physics & Semiconductors (AREA)
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- Computer Hardware Design (AREA)
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- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
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- Electrodes Of Semiconductors (AREA)
Description
図1は、本発明の第1の実施形態によるショットキーバリアダイオード10Aの構成を示す断面図である。また、図2は、ショットキーバリアダイオード10Aの上面図である。尚、図1に示す断面は、図2のA−A線に沿った断面に相当する。
図4は、本発明の第2の実施形態によるショットキーバリアダイオード10Bの構成を示す断面図である。
図5は、本発明の第3の実施形態によるショットキーバリアダイオード10Cの構成を示す上面図である。
図6は、本発明の第4の実施形態によるショットキーバリアダイオード10Dの構成を示す断面図である。また、図7は、本実施形態において使用する半導体基板20を第2の表面22側から見た底面図である。
図8は、本発明の第5の実施形態によるショットキーバリアダイオード10Eの構成を示す底面図である。
20 半導体基板
21 第1の表面
22 第2の表面
23 凹部
23a 連通孔
24 底面
25 内壁面
30 エピタキシャル層
31 絶縁膜
32 開口部
40 アノード電極
50 カソード電極
60 回路基板
61 電極パターン
62 ボンディングワイヤ
63 ハンダ
100 電子回路
Claims (10)
- 第1の表面及び前記第1の表面の反対側に位置する第2の表面を有し、前記第2の表面側に凹部が設けられた酸化ガリウムからなる半導体基板と、
前記半導体基板の前記第1の表面上に設けられた酸化ガリウムからなるエピタキシャル層と、
積層方向から見て前記凹部と重なる位置に設けられ、前記エピタキシャル層とショットキー接触するアノード電極と、
前記半導体基板の前記凹部内に設けられ、前記半導体基板とオーミック接触するカソード電極と、を備え、
前記凹部は、前記半導体基板の側面に連通していることを特徴とするショットキーバリアダイオード。 - 前記半導体基板の前記凹部は、平面視で前記第1の表面と重なる底面と、前記底面と前記第2の表面を繋ぐ内壁面とを含み、
前記カソード電極は、前記凹部の少なくとも前記底面に形成されていることを特徴とする請求項1に記載のショットキーバリアダイオード。 - 前記カソード電極は、前記凹部の前記内壁面にさらに形成されていることを特徴とする請求項2に記載のショットキーバリアダイオード。
- 前記カソード電極は、前記凹部の外に位置する前記第2の表面にさらに形成されていることを特徴とする請求項2又は3に記載のショットキーバリアダイオード。
- 前記積層方向から見た前記凹部の面積は、前記アノード電極の面積よりも小さいことを特徴とする請求項2乃至4のいずれか一項に記載のショットキーバリアダイオード。
- 前記積層方向から見た前記凹部の面積は、前記アノード電極の面積の50%以上であることを特徴とする請求項5に記載のショットキーバリアダイオード。
- 前記凹部が形成された位置における前記半導体基板の厚さは、50μm以上であることを特徴とする請求項1乃至6のいずれか一項に記載のショットキーバリアダイオード。
- 前記凹部は、スリット状に複数形成されていることを特徴とする請求項1乃至7のいずれか一項に記載のショットキーバリアダイオード。
- 前記凹部は、メッシュ状に形成されていることを特徴とする請求項1乃至7のいずれか一項に記載のショットキーバリアダイオード。
- 電極パターンを有する回路基板と、
前記回路基板上に搭載された請求項1乃至9のいずれか一項に記載のショットキーバリアダイオードと、
少なくとも一部が前記半導体基板の前記凹部に埋設され、前記電極パターンと前記カソード電極とを接続する導電部材と、を備えることを特徴とする電子回路。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016218652A JP6812758B2 (ja) | 2016-11-09 | 2016-11-09 | ショットキーバリアダイオード及びこれを備える電子回路 |
US16/348,592 US10840384B2 (en) | 2016-11-09 | 2017-09-11 | Schottky barrier diode and electronic circuit provided with same |
EP17869159.8A EP3540784B1 (en) | 2016-11-09 | 2017-09-11 | Schottky barrier diode and electronic circuit provided with same |
PCT/JP2017/032612 WO2018088018A1 (ja) | 2016-11-09 | 2017-09-11 | ショットキーバリアダイオード及びこれを備える電子回路 |
CN201780068998.0A CN109923678B (zh) | 2016-11-09 | 2017-09-11 | 肖特基势垒二极管和具备其的电子电路 |
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JP2016218652A JP6812758B2 (ja) | 2016-11-09 | 2016-11-09 | ショットキーバリアダイオード及びこれを備える電子回路 |
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JP2018078177A JP2018078177A (ja) | 2018-05-17 |
JP6812758B2 true JP6812758B2 (ja) | 2021-01-13 |
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US (1) | US10840384B2 (ja) |
EP (1) | EP3540784B1 (ja) |
JP (1) | JP6812758B2 (ja) |
CN (1) | CN109923678B (ja) |
WO (1) | WO2018088018A1 (ja) |
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US10971634B2 (en) * | 2017-06-29 | 2021-04-06 | Mitsubishi Electric Corporation | Oxide semiconductor device and method of manufacturing oxide semiconductor device |
JP2020043126A (ja) * | 2018-09-06 | 2020-03-19 | 住友電気工業株式会社 | 炭化珪素半導体装置および炭化珪素半導体モジュール |
CN109920857B (zh) * | 2019-03-19 | 2021-11-30 | 珠海镓未来科技有限公司 | 一种肖特基二极管及其制备方法 |
JP7316865B2 (ja) | 2019-07-22 | 2023-07-28 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP2021106191A (ja) * | 2019-12-26 | 2021-07-26 | 株式会社ノベルクリスタルテクノロジー | 半導体素子及びその製造方法、並びに半導体装置及びその製造方法 |
JP7391326B2 (ja) * | 2019-12-26 | 2023-12-05 | 株式会社ノベルクリスタルテクノロジー | 半導体装置 |
CN112382664A (zh) * | 2020-11-03 | 2021-02-19 | 广东省科学院半导体研究所 | 一种倒装mosfet器件及其制作方法 |
CN112382665A (zh) * | 2020-11-03 | 2021-02-19 | 广东省科学院半导体研究所 | 一种氧化镓基mosfet器件及其制作方法 |
US20230290886A1 (en) * | 2021-04-15 | 2023-09-14 | Enkris Semiconductor, Inc. | Semiconductor structures and manufacturing methods thereof |
CN116169157A (zh) * | 2021-11-25 | 2023-05-26 | 广州华瑞升阳投资有限公司 | 一种氧化镓器件及制备方法 |
CN114446904A (zh) * | 2021-12-30 | 2022-05-06 | 光梓信息科技(深圳)有限公司 | 基于纳米级散热器的晶圆封装结构及方法 |
WO2023181801A1 (ja) * | 2022-03-24 | 2023-09-28 | ローム株式会社 | 半導体装置およびその製造方法 |
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JP2868194B2 (ja) | 1992-03-25 | 1999-03-10 | 松下電工株式会社 | 半導体装置における放熱構造 |
JPH07336009A (ja) | 1994-06-10 | 1995-12-22 | Fujitsu General Ltd | 半導体素子の放熱構造 |
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EP2754738B1 (en) * | 2011-09-08 | 2021-07-07 | Tamura Corporation | Schottky-barrier diode |
JP2013102081A (ja) | 2011-11-09 | 2013-05-23 | Tamura Seisakusho Co Ltd | ショットキーバリアダイオード |
JP5841417B2 (ja) * | 2011-11-30 | 2016-01-13 | 株式会社日立製作所 | 窒化物半導体ダイオード |
JP6065198B2 (ja) * | 2012-02-21 | 2017-01-25 | ローム株式会社 | 半導体装置および半導体装置の製造方法 |
JP6004561B2 (ja) * | 2012-03-30 | 2016-10-12 | 国立研究開発法人産業技術総合研究所 | 炭化珪素半導体素子の製造方法 |
JP6137955B2 (ja) * | 2013-06-14 | 2017-05-31 | 新電元工業株式会社 | 炭化ケイ素半導体装置及び炭化ケイ素半導体装置の製造方法 |
JP2016031953A (ja) | 2014-07-25 | 2016-03-07 | 株式会社タムラ製作所 | 半導体素子及びその製造方法、半導体基板、並びに結晶積層構造体 |
CN112038416B (zh) * | 2020-09-15 | 2021-09-03 | 西安电子科技大学 | 基于p型NiO薄膜和斜面终端结构的肖特基二极管及其制作方法 |
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EP3540784B1 (en) | 2023-08-16 |
EP3540784A4 (en) | 2020-05-20 |
US20200058804A1 (en) | 2020-02-20 |
EP3540784A1 (en) | 2019-09-18 |
US10840384B2 (en) | 2020-11-17 |
CN109923678A (zh) | 2019-06-21 |
JP2018078177A (ja) | 2018-05-17 |
WO2018088018A1 (ja) | 2018-05-17 |
CN109923678B (zh) | 2023-01-31 |
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