JP6487122B2 - 電力用半導体装置 - Google Patents

電力用半導体装置 Download PDF

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Publication number
JP6487122B2
JP6487122B2 JP2018523895A JP2018523895A JP6487122B2 JP 6487122 B2 JP6487122 B2 JP 6487122B2 JP 2018523895 A JP2018523895 A JP 2018523895A JP 2018523895 A JP2018523895 A JP 2018523895A JP 6487122 B2 JP6487122 B2 JP 6487122B2
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wire
solder layer
semiconductor device
power semiconductor
conductor layer
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Japanese (ja)
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JPWO2017217369A1 (ja
Inventor
辰則 柳本
辰則 柳本
晋助 浅田
晋助 浅田
耕一 東久保
耕一 東久保
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191Disposition
    • H01L2924/19101Disposition of discrete passive components
    • H01L2924/19107Disposition of discrete passive components off-chip wires

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Die Bonding (AREA)
  • Wire Bonding (AREA)
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JP2022031611A (ja) * 2018-11-09 2022-02-22 住友電気工業株式会社 半導体装置
WO2020116306A1 (ja) * 2018-12-04 2020-06-11 株式会社クラレ 高電圧用回路基板およびそれを用いた高電圧デバイス
EP3675190B1 (de) 2018-12-25 2023-05-03 Nichia Corporation Verfahren zur herstellung einer lichtquellenvorrichtung und lichtquellenvorrichtung
CN113711349A (zh) * 2019-04-25 2021-11-26 京瓷株式会社 发光元件搭载用基板以及发光装置
JP7282048B2 (ja) * 2020-02-12 2023-05-26 三菱電機株式会社 電力用半導体装置およびその製造方法
KR20210129483A (ko) * 2020-04-20 2021-10-28 현대자동차주식회사 솔더링 구조, 이를 갖는 파워 모듈 및 파워 모듈의 제조 방법
JP7489879B2 (ja) 2020-09-25 2024-05-24 三菱電機株式会社 電力用半導体装置および電力用半導体装置の製造方法
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JP3347279B2 (ja) 1997-12-19 2002-11-20 三菱電機株式会社 半導体装置およびその製造方法
JP2000013029A (ja) * 1998-04-22 2000-01-14 Hitachi Cable Ltd 高密度配線基板、その製造方法、及びそれを用いた電子装置
JP3287328B2 (ja) * 1999-03-09 2002-06-04 日本電気株式会社 半導体装置及び半導体装置の製造方法
US6525423B2 (en) * 2001-06-19 2003-02-25 Cree Microwave, Inc. Semiconductor device package and method of die attach
JP3836010B2 (ja) * 2001-10-19 2006-10-18 三菱電機株式会社 半導体装置
JP3705779B2 (ja) * 2002-03-26 2005-10-12 株式会社東芝 パワーデバイスとその製造方法ならびに錫基はんだ材料
JP2005236019A (ja) * 2004-02-19 2005-09-02 Fuji Electric Holdings Co Ltd 半導体装置の製造方法
JP2007142271A (ja) * 2005-11-21 2007-06-07 Tanaka Electronics Ind Co Ltd バンプ材料および接合構造
JP5187832B2 (ja) * 2008-03-11 2013-04-24 田中電子工業株式会社 半導体装置
CN102484080B (zh) 2009-06-18 2015-07-22 罗姆股份有限公司 半导体装置
JP2011071301A (ja) * 2009-09-25 2011-04-07 Honda Motor Co Ltd 金属ナノ粒子を用いた接合方法及び接合体
JP2012028433A (ja) * 2010-07-21 2012-02-09 Nec Network Products Ltd 電子部品の実装方法
JP5542567B2 (ja) * 2010-07-27 2014-07-09 三菱電機株式会社 半導体装置
JP2012069733A (ja) * 2010-09-24 2012-04-05 Hitachi High-Tech Instruments Co Ltd ダイボンダの治工具管理方法、および、ダイボンダ
US8587116B2 (en) * 2010-09-30 2013-11-19 Infineon Technologies Ag Semiconductor module comprising an insert
TWI466253B (zh) * 2012-10-08 2014-12-21 Ind Tech Res Inst 雙相介金屬接點結構及其製作方法
JP6029756B2 (ja) 2013-07-10 2016-11-24 三菱電機株式会社 半導体装置及びその製造方法
JP2016026884A (ja) * 2014-07-02 2016-02-18 住友金属鉱山株式会社 中低温用のBi−Sn−Al系はんだ合金及びはんだペースト
CN105575924B (zh) 2014-10-15 2018-07-03 台达电子工业股份有限公司 功率模块
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JP6983187B2 (ja) 2021-12-17
CN115274465A (zh) 2022-11-01
CN109314063B (zh) 2022-08-16
CN109314063A (zh) 2019-02-05
DE112017002961B4 (de) 2022-06-09

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