CN107615464A - 电力用半导体装置的制造方法以及电力用半导体装置 - Google Patents

电力用半导体装置的制造方法以及电力用半导体装置 Download PDF

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Publication number
CN107615464A
CN107615464A CN201680029831.9A CN201680029831A CN107615464A CN 107615464 A CN107615464 A CN 107615464A CN 201680029831 A CN201680029831 A CN 201680029831A CN 107615464 A CN107615464 A CN 107615464A
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power semiconductor
semiconductor device
projection
electrode terminal
conductive pattern
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CN107615464B (zh
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米田裕
藤野纯司
重和良
广中阳
广中阳一
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Abstract

本发明的目的在于提供防止导体图案以及绝缘层破损且具有比通常的电极端子与导体图案的接合高的接合强度的可靠性高的电力用半导体装置的制造方法以及电力用半导体装置。包括：将电极端子(3)以接合面(3j)的中央部相接的方式载置于在处于陶瓷基板(5)的电路面侧的导体图案(52a)上设置的突起(52c)的前端部的工序；以及利用超声波焊头(50)对电极端子(3)的接合面(3j)的背面(3z)进行加压并进行超声波振动而与导体图案(52a)接合的工序，由此防止导体图案以及绝缘层破损。

Description

电力用半导体装置的制造方法以及电力用半导体装置
技术领域
本发明涉及将电极端子接合于半导体元件等的电力用半导体装置的制造方法以及电力用半导体装置，特别涉及通过超声波接合而接合的电力用半导体装置的制造方法以及电力用半导体装置。
背景技术
在现有的电力用半导体装置中、特别是在大电流的电力用半导体装置中，为了高效地流过大电流，需要大面积地接合与外部电路连接的电极端子，所以将焊料接合用于电极端子的接合(例如参照专利文献1)。但是，随着使用电力用半导体装置的温度环境变得严格，现有的焊料接合可能无法满足所要求的可靠性。另外，在现有的焊料接合中，在电力用半导体装置构成为将在陶瓷板的两面形成有导体图案的陶瓷基板焊料接合于基板的情况下，由于对电极端子进行焊料接合时的加热，接合基板与陶瓷基板的焊料有可能重新熔融。因此，作为接合电极端子的焊料，不能使用熔点与接合基板与陶瓷基板的焊料接近的焊料，存在需要多种焊料而工艺变复杂的问题。
作为解决这些问题的方法，有对陶瓷基板上的导体图案超声波接合电极端子的方法。由于超声波接合是固相接合而无需加热工序，所以在接合电极端子时不会使接合基板与陶瓷基板的焊料重新熔融，能够大面积地接合电极端子，而且与焊料接合相比还能够提高接合部的可靠性。超声波接合是如下技术：通过利用超声波焊头对被接合材料进行加压的同时进行超声波振动，排除在接合界面形成的氧化膜和附着的污渍，使新生成的面彼此密接而形成接合层。因此，可以认为在导体图案的接合部周边由于接合时导体图案引起应力集中而破损。在半导体装置中，动作时在半导体元件流动的电流从电极端子通过接合部而流经导体图案，所以在导体图案破损时，有可能在半导体装置无电流流动。另外，一般而言，导体图案与绝缘层一体地形成以避免电流流到半导体装置的散热面，在导体图案破损时，与导体图案一体地形成的绝缘层与其同时也会破损，还有可能无法确保产品的绝缘性，因此非常危险。
因此，针对该问题，在专利文献2中公开了将树脂层设置于端子端部与导体图案之间的构造。由此，在电极端子的端部附近，在端子与导体图案之间存在软质的部件，因此能够防止在进行超声波接合时端子端部与导体图案直接接触，减少作用于导体图案的压力，所以能够抑制导体图案破损，因此能够增强加压而进行接合。
另外，考虑通过弱化接合条件来防止导体图案以及绝缘层破损的方法。但是，在弱化接合条件时，存在接合部的接合强度降低的问题。针对该问题，在专利文献3中公开了将铜构件用作电极端子的构造，该铜构件是在与导体图案的接合端面具有突起高度至少为在相对侧的表面生成的氧化膜的膜厚以上的突起并且硬度调整为比导体图案高的构件。通过在电极端子的接合端面设置突起，突起在相对侧部件的表面滑动而使氧化膜***破损，从而与其下部的本征表面直接相互接触，在从该状态进一步继续施加超声波振动时，在包括突起部分的电极端子的接合面产生塑性流动，由此金属本征表面彼此的粘合部分扩大，电极端子与相对侧部件之间不会受氧化膜的影响而以足够的接合强度被超声波接合。
专利文献1：日本特开2006－253516号公报(第0012段、图1)
专利文献2：日本特开2010－082668号公报(第0013段、图1)
专利文献3：日本特开2005－259880号公报(第0008段、图1)
发明内容
然而，在专利文献2中，在存在软质部件的区域不形成电极端子与导体图案的接合部，所以与电极端子的大小相比，所获得的接合部变小。另外，由于软质的部件因超声波接合而破损并残存于接合部内，有可能成为接合强度降低的原因。另外，在专利文献3中，使用硬度调整为比导体图案高的铜构件，所以在接合时突起不变形地陷入到导体图案，从而有可能即使弱化接合条件也会使导体图案以及绝缘层破损。
本发明是为了解决上述问题而完成的，其目的在于提供一种在对绝缘层上的导体图案超声波接合电极端子的半导体装置中在不使用树脂层的情况下防止导体图案以及绝缘层破损、且具有比通常的电极端子与导体图案的接合高的接合强度的可靠性高的电力用半导体装置的制造方法以及电力用半导体装置。
本发明的电力用半导体装置的制造方法的特征在于，包括以所述电极端子的所述接合面相接的方式载置于在电极端子的接合面中央部处相对置的位置设置的电极层上的突起的前端部的工序；以及利用超声波焊头对所述电极端子的所述接合面的背面进行加压并进行超声波振动而与所述电极层接合的工序。
根据本发明，通过使用在电极层上设置的突起的前端部来与电极端子进行超声波接合，能够防止由于在施加超声波时产生的加压所引起的应力集中以致电极层等破损。
附图说明
图1是用于说明本发明的实施方式1的电力用半导体装置的主要部分的接合前的结构的局部剖视图以及俯视图。
图2是用于说明本发明的实施方式1的电力用半导体装置的主要部分的制造方法的、导体图案与电极端子的接合部分的各工序中的剖视图。
图3是用于说明比较例的电力用半导体装置的制造方法的、导体图案与电极端子的接合部分的各工序中的剖视图。
图4是示出本发明的实施方式1的电力用半导体装置的突起形状的一个例子的局部剖视图以及俯视图。
图5是示出本发明的实施方式1的电力用半导体装置的突起形状的一个例子的局部剖视图以及俯视图。
图6是示出本发明的实施方式1的电力用半导体装置的突起形状的一个例子的局部剖视图以及俯视图。
图7是示出本发明的实施方式1的电力用半导体装置的突起形状的一个例子的局部剖视图以及俯视图。
图8是示出本发明的实施方式1的电力用半导体装置的突起形状的一个例子的局部剖视图以及俯视图。
图9是示出本发明的实施方式1的电力用半导体装置的突起形状的一个例子的局部剖视图以及俯视图。
图10是示出本发明的实施方式1的电力用半导体装置的突起形状的一个例子的局部剖视图以及俯视图。
图11是示出本发明的实施方式1的电力用半导体装置的突起形状的一个例子的局部剖视图以及俯视图。
图12是用于说明本发明的实施方式2的电力用半导体装置的主要部分的接合前的结构的局部剖视图以及俯视图。
(符号说明)
1：电力用半导体元件；2：表面电极；2c：突起；3：电极端子；3j：接合面；50：超声波焊头；51：陶瓷基体材料；52a：导电图案；52c、52c1、52c2、52c3、52c4、52c5、52c6、52c7：突起；52d：凹部端部；100、100－1、100－2、100－3、100－4、100－5、100－6、100－7、100－8、101：功率半导体装置。
具体实施方式
以下，参照附图说明作为本发明的实施方式的电力用半导体装置。此外，在各图中，对同一或者相同的结构部分附加相同符号。在各图之间的图示中，对应的各结构部的尺寸和比例尺分别独立，例如还有在变更了结构的一部分的剖视图之间未被变更的同一结构部分的图示中同一结构部分的尺寸和比例尺不同的情况。另外，该电力用半导体装置的结构实际还具备多个部件，但为了简化说明，仅记载说明所需的部分而省略其它部分(例如电力用半导体元件和壳体等)。
实施方式1.
图1的(a)以及图1的(b)是示出本发明的实施方式1的电力用半导体装置100的主要部分的接合前的结构的局部剖视图以及俯视图。如图1的(a)以及图1的(b)所示，本发明的实施方式1的电力用半导体装置100具备陶瓷基板5、散热部件6以及电极端子3等，其中陶瓷基板5是在陶瓷基体材料51的两侧的面形成有作为电极层的导体图案52a、导体图案52b的绝缘基板。利用焊料8将散热部件6接合于陶瓷基板5的散热面侧(导体图案52b侧)，将电极端子3超声波接合于电路面侧(导体图案52a侧)。电极端子3电连接于电力用半导体元件1的主电极。以下，详细进行说明。此外，在各图中示出了坐标系，x方向是与陶瓷基板5平行且电极端子3的接合部延伸的方向，z方向是与陶瓷基板5垂直的方向，y方向是与纸面垂直的方向。坐标系的x方向、y方向、z方向分别正交。
电极端子3是用于将陶瓷基板5的作为电极层的导电图案52a与外部电路电连接起来的布线部件。电极端子3的材料优选为电阻小的金属，一般使用对Cu或Al等的金属板进行切割而得到的制品或者进行冲压加工而得到的制品。电极端子3在一端形成与导体图案52a连接的接合部，另一端侧与其它电路部件或外部电路电连接。另外，关于电极端子3，为了增大可通电的电流，优选电极端子3的剖面积大，但为了使在进行超声波接合时施加的功率易于传递给接合面3j，厚度优选是薄的。因此，优选构成电极端子3的板材或者至少具有与导体图案52a相对置的接合面3j的部分的厚度为0.5mm～2.0mm、宽度为2.0mm～6.0mm左右。
陶瓷基板5包括陶瓷基体材料51与形成于陶瓷基体材料51的两侧的面的导体图案52a、导体图案52b。陶瓷基体材料51是电绝缘物，优选为导热系数高的材料，一般使用厚度为0.635mm或0.32mm的AlN或SiN、Al2O3等的陶瓷板。导体图案52a和导体图案52b一般使用相同材料。其中，与电极端子3形成接合部的导体图案52a是用于将电力用半导体元件与外部电路电连接起来的布线部件，所以优选为电阻小的金属。因此，一般将厚度为1.0mm以下左右的Cu或Al等用于导体图案52a、导体图案52b。另外，在导体图案52a的至少与电极端子3的接合面3j被超声波接合的面内，设置有1个以上的突起52c。该突起52c通过机械加工或蚀刻等而形成。本实施方式1中的突起52c例如是前端的形状为直径φ2.0mm的圆柱形、高度为0.1mm的突起。
散热部件6通过焊料8与单张或者多张陶瓷基板5接合，自身起到作为散热板的作用，并且散热部件6的与被焊料8接合的面相对置的面通过导热油脂等与散热器连接，从而使由电力用半导体装置产生的热高效地向外部散发。因此，散热部件6的材料优选为导热系数高的金属，一般使用厚度1mm～5mm左右的Cu、Al或AlSiC等的金属板。
焊料8将陶瓷基板5的散热面侧与散热部件6接合。因此，焊料8的材料优选为熔点低、导热系数高的金属，一般使用利用Sn、Pb、Ag、Cu等的合金。另外，根据可靠性和散热性的观点，其厚度优选为0.1mm～0.3mm左右。
接下来，说明本发明的实施方式1的电力用半导体装置100的主要部分的制造方法。图2的(a)、图2的(b)以及图2的(c)是示出本发明的实施方式1的电力用半导体装置100的主要部分的制造工序的图。
首先，如图2的(a)所示，以接合面3j与突起52c相接的方式将电极端子3载置于设置于导体图案52a的突起52c上。此时，将组装中的电力用半导体装置整体固定于未图示的超声波接合装置，图中仅记载了电极端子3和导体图案52a部分。然后，使超声波焊头50沿A方向(Z轴方向)下降，以使得前端接触到电极端子3的接合面3j的背面3z的预定位置。此时，为了最大限度地获得突起52c所起到的效果，优选使超声波焊头50的前端的中心下降到作为突起52c的中心的位置。另外，因为电极端子3与突起52c的表面被氧化膜等阻碍接合的膜等覆盖，所以电极端子3与突起52c不会接合。
接下来，如图2的(b)所示，将超声波焊头50针对电极端子3进行加压，进而使超声波焊头50在B方向以及C方向(X轴方向)上进行超声波振动。此时的频率例如是几十kHz，使超声波焊头50一边振动一边沿A方向下降。由此，突起52c与电极端子3的接触面摩擦，覆盖接触面的氧化膜等阻碍接合的膜等被排除。超声波焊头50的突起部被陷入到电极端子3的接合面3j的背面3z部分。在接合进一步地进行时，从突起52c的表面起依次与电极端子3接合，突起52c由于由超声波焊头50提供的加压和振动而特别相对振动方向发生变形，从而接合面积以突起52c为中心而扩大，接合部的端部向电极端子3的外侧移动。
最终，如图2的(c)所示，突起52c变形而消失，导体图案52a与电极端子3由于超声波振动而接触面彼此接合，形成牢固的接合层。此时，如上所述，首先接合突起52c的表面，此后依次接合电极端子3与导体图案52a，所以接合面积随着接合进行而变大，与此相伴地加压所引起的应力变小，所以能够防止由于在施加超声波时产生的加压所引起的应力集中以致导体图案52a及陶瓷基体材料51破损。此外，由于突起52c优先变形，所以能够促进接合部的塑性流动，使突起部周边的晶粒进一步微细化，因此接合部变得更牢固。能够以接合后的断裂面的状态或基于剖面抛光的粒径的状态等来观察利用该突起52c而更牢固接合的部分。另外，为了增大而获得突起52c变形所带来的牢固的接合面的面积，电极端子3的接合面的表面形状优选为平面。
图3的(a)、图3的(b)以及图3的(c)是示出现有的电力用半导体装置100C的主要部分的制造工序的图。在现有的电力用半导体装置100C的情况下，如图3的(a)所示，在导体图案52a没有本实施方式1中的突起52c，所以接合面3j的整个面载置于导体图案52a。
接下来，如图3的(b)所示，由于利用超声波接合进行接合时的加压和振动，导体图案52a与电极端子3的接触面彼此摩擦，覆盖接触面的氧化膜等阻碍接合的膜等被排除，但当将电极端子3载置到未设置有突起52c的导体图案52a而开始超声波接合时，电极端子3的接合面3j的两端被接合。即使利用超声波焊头50实施加压和超声波振动，接合部也不会再变大，加压所引起的应力也不会变小。此时被排除的氧化膜等不仅向电极端子3的外侧排斥，还向电极端子3的内侧移动。当端子的两端被接合时，移动到该电极端子3的中央部的氧化膜等未被排除到电极端子3的外侧而残存在接触面之间，所以该部分未被接合而成为未接合区域，相应地获得的接合面积变小，因此成为接合强度或可靠性降低的原因。
另外，在长时间持续该状态的情况下，如图3的(c)所示，有时在导体图案52a的与电极端子3的接合部产生裂纹K而导体图案52a破损。在半导体装置中，动作时在半导体元件流动的电流从电极端子3通过接合部流经导体图案52a，所以在导体图案52a破损时，有可能在半导体装置无电流流动。另外，一般而言，导体图案52a与绝缘层一体地形成以避免电流流到半导体装置的散热面，当导体图案52a破损时，与导体图案一体地形成的绝缘层与其同时也会破损，还有可能无法确保产品的绝缘性，因此非常危险。为了避免这一情况，有减少作为超声波施加条件的负载和振幅并缩短施加时间的方法，但这同时成为使电极端子3与导体图案52a的接合强度降低的原因，有减小接合工艺的裕度的缺点。
与此相对，在本发明的实施方式1的电力用半导体装置100中，将突起52c设置于导体图案52a的与电极端子3的接合面3j被超声波接合的面内，从而被排除的氧化膜等与突起52c的变形相伴地向电极端子3的外侧排斥而不会残存于接合部内。因此，由于接合至电极端子3的接合面3j的内侧，所以与现有的电力用半导体装置100C相比，能够增大接合面积。在接合面积变大时，相应地接合部的电阻变小，能够抑制通电电阻所引起的电极端子3发热，因此与接合面积小的情况相比，能够流过更大的电流。此外，由于突起52c优先变形，所以能够促进接合部的塑性流动，所以与现有的超声波接合部相比，能够使突起部周边的晶粒进一步微细化。因此，与现有的超声波接合部相比，接合部更不易损坏，所以能够获得可靠性高的接合部。
另外，在接合面积变大时，无论对于因半导体装置动作所引起的温度变化而产生的由于部件之间的线性膨胀系数差而在接合部产生的热应力、还是对于由于半导体装置整体的温度变化所引起的变形而使接合部受到的拉伸应力、还是对于由于半导体装置整体的温度变化所引起的变形而使接合部受到的拉伸应力，接合部都不易损坏，所以能够获得可靠性高的电力用半导体装置。因此，与现有的电极端子3和导体图案52a的接合相比，能够应对更大的电流，获得可靠性高的电力用半导体装置。
此外，在进行超声波接合时，突起52c由于被超声波焊头50加压而从图2的(a)的形状向导体图案52a侧(z方向)变形，但在突起52c的高度高于其变形量时，仅在突起52c和电极端子3就完成了接合。由于导体图案52a与电极端子3不接触，所以有可能导致接合面积不会扩大而获得的接合面积相对电极端子3的接合面3j变小。此外，由于加压和振动而在突起52c的根部分发生应力集中，突起52c与导体图案52a有可能破损。因此，突起52c的高度优选设定得低于突起52c的由加压引起的变形量。例如，在电极端子3与导体图案52a以及突起52c都由铜构成的情况下，突起52c的高度优选设为0.01mm～0.2mm左右。在电极端子3由铜构成、导体图案52a以及突起52c由铝构成的情况下，突起52c的高度优选设为0.01mm～0.4mm左右。另外，如果突起52c前端的面积大，则基于超声波焊头50的每单位面积的加压力变小，突起52c的变形量变小。虽然需要使突起52c的前端的面积小于电极端子3的接合面3j，但例如在电极端子3与导体图案52a以及突起52c都由铜构成的情况下，突起52c的前端的面积优选设为10mm2以下左右。在电极端子3由铜构成、导体图案52a以及突起52c由铝构成的情况下，突起52c的前端的面积优选设为15mm2以下左右。
另外，通过使突起52c的维氏硬度(以下称为硬度)小于电极端子3，即使通过更小的加压也会使突起52c变形，所以能够进一步提高防止导体图案的应力集中所致的破损以及接合强度提高的效果，因此优选使突起52c的硬度小于电极端子3。
进而，突起52c的形状只要是满足上述功能的形状，则除了圆柱形以外，还可以是半球形状或棱柱形状、圆锥或棱锥等任意形状，例如，如图4的(a)以及图4的(b)所示，优选为圆角(edge-rounded)形状的突起52c1。如果是这样的形状，则能够防止由于接合时的基于超声波焊头50的加压和振动而在突起52c的根部分发生应力集中以致突起52c1和导体图案52a破损。另外，如图5的(a)以及图5的(b)所示，将在导体图案52a的与接合面3j接合的面内设置的突起设为多个突起52c2，由此能够抑制由于陶瓷基板5或电极端子3的倾斜而导体图案52a与电极端子3单侧接触所致的接合强度降低。
另外，突起52c在由于接合时的基于超声波焊头50的加压和振动而变形时，相对超声波焊头50的振动方向大幅变形，所以在突起52c例如是圆形的情况下，利用突起52c而得到的效果的范围相对振动方向变大。因此，如图6的(a)以及图6的(b)所示，通过预先设为使突起的形状在与振动方向垂直的方向上加长而成的突起52c3，能够进一步高效地扩大突起所带来的接合强度提高的效果的范围。例如，在振动方向是y方向的情况下，优选将突起52c3的前端的长度之比设为在x方向上为2、在y方向上为1。
另外，如图7的(a)以及图7的(b)所示，也可以通过使导体图案52a的周围凹陷来制作突起52c4。此时，为了获得突起52c4的效果，需要使凹陷部的外周大于电极端子3的外周部。此外，优选与电极端子3相对突起52c4的可容许的位置偏移量的界限位置处的电极端子3的外周部相同或者比其小，由此能够通过外观检查进行接合前的端子的定位。
进而，如图8的(a)以及图8的(b)所示，在电极端子3的与突起52c相对置的位置设置有小于突起52c的凹陷3a，从而利用超声波焊头50加压所引起的型锻效应，能够使接合强度提高的效果提高。进而，通过使凹陷3a为贯通孔，除此之外还能够进行端子定位。
此外，突起52c也可以由与导体图案52a不同的部件形成。例如，如图9的(a)以及图9的(b)所示，通过在导体图案52a上以形成环的方式结合Cu导线或Cu丝，从而与加工导体图案52a相比，不仅能够更容易地形成突起52c5，而且在接合时环部分优先变形，所以能够进一步减少对导体图案52a及陶瓷基体材料51造成的损伤。同样地，如图10的(a)以及图10的(b)所示，通过热喷涂等形成密度比导体图案52a小的突起52c6，从而与加工导体图案52a相比，不仅能够更容易地形成突起52c6，而且在接合时密度小的突起52c6优先变形，所以能够进一步降低对导体图案52a及陶瓷基体材料51造成的损伤。另外，也可以将薄的Cu箔预先接合到导体图案52a。此时，如图11的(a)以及图11的(b)所示，Cu箔也与电极端子3同样地通过超声波接合而接合，从而能够缩短Cu箔的接合工序，除此以外，由于超声波焊头50的前端的形状被转印到Cu箔，所以还能够容易地获得与图5所示的设置多个突起52c2相同的效果。因为接合Cu箔所需的加压力小于接合电极端子3所需的加压力，所以在将Cu箔超声波接合于导体图案52a时也不会对导体图案52a及陶瓷基体材料51造成损伤。
以上，根据本发明的实施方式1的电力用半导体装置100的制造方法，设为包括：将电极端子3以接合面3j的中央部相接的方式载置于在处于陶瓷基板5的电路面侧的导体图案52a上设置的突起52c的前端部的工序；以及利用超声波焊头50对电极端子3的接合面3j的背面3z进行加压并进行超声波振动而与导体图案52a接合的工序，所以随着接合进行，接合面积变大，与此相伴地加压所引起的应力变小，因此能够防止由于在施加超声波时产生的加压所引起的应力集中以致导体图案52a及陶瓷基体材料51破损。
另外，处于电极端子3与突起52c的表面的氧化膜等与突起52c的变形相伴地向电极端子3的外侧排斥而不会残存于接合部内，接合至电极端子3的接合面3j的内侧，所以与现有的电力用半导体装置100C相比，能够增大接合面积。在接合面积变大时，相应地接合部的电阻变小，能够抑制通电电阻所引起的电极端子3的发热，因此与接合面积小的情况相比，能够流过更大的电流。
另外，在接合面积变大时，无论对于因半导体装置动作所引起的温度变化而产生的由于部件之间的线性膨胀系数差而在接合部产生的热应力、还是对于由于半导体装置整体的温度变化所引起的变形而使接合部受到的拉伸应力、还是对于由于半导体装置整体的温度变化所引起的变形而使接合部受到的拉伸应力，接合部都不易损坏，所以能够获得可靠性高的电力用半导体装置。因此，与现有的电极端子3和导体图案52a的接合相比，能够应对更大的电流，获得可靠性高的电力用半导体装置。
实施方式2.
在实施方式1中，示出了将超声波接合用于陶瓷基板5的导电图案52a与电极端子3的接合的情况，而在实施方式2中说明将超声波接合用于电力用半导体元件的表面电极与电极端子3的接合的情况。
图12的(a)以及图12的(b)是示出本发明的实施方式2的电力用半导体装置109的主要部分的接合前的结构的局部剖视图以及俯视图。如图12的(a)以及图12的(b)所示，本发明的实施方式2的电力用半导体装置101具备形成于电力用半导体元件1的表面的作为电极层的表面电极2以及电极端子3等。在表面电极2的下部形成有晶体管10。
电力用半导体元件1是构成逆变器或转换器等的电力用半导体元件。虽然未图示，但电力用半导体元件1的背面侧的面被焊料接合于陶瓷基板5的导体图案52a上。电力用半导体元件1只要包括至少1个以上的半导体元件即可，但优选将IGBT(Insulated GateBipolar Transistor，绝缘栅双极型晶体管)或者MOSFET(Metal-Oxide-SemiconductorField-Effect Transistor，金属氧化物半导体场效应晶体管)与二极管反向并联连接。将Si用作电力用半导体元件1的材料。此外，电力用半导体元件1的材料不限定于由Si形成的材料，也可以由带隙比Si大的宽带隙半导体形成。作为宽带隙半导体，例如可列举出SiC、GaN、金刚石等。由于将SiC用于电力用半导体元件的电力用半导体装置在更高的温度下动作，所以半导体装置的温度变化变大，在接合部产生的热应力和拉伸应力具有变大的倾向，因此使用SiC的电力用半导体装置由于使本发明的优点更为有效而是优选的。SiC与Si相比，相对芯片的额定电流的表面电极2的面积更小，所以与Si的情况相比，要求更高密度的布线技术。因此，在使用SiC的电力用半导体装置中，通过将电极端子3超声波接合到表面电极2，使一次接合大面积的本发明的优点更为有效。
表面电极2是形成于电力用半导体元件1的表面的电极布线用的金属膜。一般将Al用作表面电极2的材料，还有时使用Al合金或Cu、Cu合金等。根据情况，也有时层叠Ti、Mo、Ni、Au等金属，但在任意的情况下都能够获得相同的效果。本实施方式2的表面电极2的材料是Al。另外，与本实施方式1同样地，在表面电极2的至少与电极端子3的接合面3j被超声波接合的面内设置有1个以上的突起2c。本实施方式2中的突起2c在表面电极2形成时同时形成，前端部的形状是直径φ1.0mm的圆形、高度是0.05mm。其它结构与实施方式1的电力用半导体装置100相同，省略其说明。
在电力用半导体元件1中，与在实施方式1中说明的导体图案52a同样地，需要流过为了使电力用半导体装置进行动作所需的电流，这在将电极端子3超声波接合于电力用半导体元件1的表面电极2上的情况下也是同样的。另外，在超声波接合中，越是板材厚度厚且硬的材料，接合所需的能量越多，所以与Al导线等的超声波接合相比，需要增大负载或接合时间、振幅等接合条件。
在使用现有的电力用半导体装置的情况下，在为了在超声波接合时获得足够的接合面积所需的接合条件下，实际的表面电极2的厚度相对表面电极2变形的量而过薄，所以由于基于超声波焊头50的加压和超声波振动，表面电极2与电极端子3一起变形，一部分被排斥，在其下部形成的晶体管10破损。在变形进一步地进行时，电极端子3与电力用半导体元件1接触，电力用半导体元件1破损。
与此相对，在本发明的实施方式2的电力用半导体装置101中，如上所述在与电极端子3的接合面3j被超声波接合的表面电极2的面内设置有突起2c。此时，由于基于超声波焊头50的加压和超声波振动，突起2c优先变形，所以能够抑制表面电极2由于基于超声波焊头50的加压和超声波振动而变形，能够防止在其下部形成的晶体管10和电力用半导体元件1破损。
以上，根据本发明的实施方式2的电力用半导体装置101的制造方法，设为包括将电极端子3以接合面3j的中央部相接的方式载置于在电力用半导体元件1的表面电极2上设置的突起2c的前端部的工序；以及利用超声波焊头50对电极端子3的接合面3j的背面3z进行加压并进行超声波振动而与表面电极2接合的工序，所以除了能够获得本实施方式1的接合性提高的效果之外，还能够获得抑制表面电极2由于基于超声波焊头50的加压和超声波振动而变形、防止使在其下部形成的晶体管和电力用半导体元件破损的效果。
另外，将突起2c的形状设为本实施方式1的图4至图11所示的形状，由此能够获得与本实施方式1相同的效果。
此外，本发明能够在其发明范围内自由地组合各实施方式、或对各实施方式进行适当变形、省略。

Claims (10)

1.一种电力用半导体装置的制造方法，其特征在于，包括：
将处于电极端子的背面侧的接合面的一部分以与在电极层上设置的具有比所述电极端子低的硬度的突起的前端部相接的方式载置的工序；以及
由于从所述电极端子的表面侧的基于超声波焊头的加压和超声波振动而所述突起变形，从而将所述电极端子与所述电极层接合的工序。
2.根据权利要求1所述的电力用半导体装置的制造方法，其特征在于，
所述电极层是绝缘基板上的导电图案。
3.根据权利要求1所述的电力用半导体装置的制造方法，其特征在于，
所述电极层是电力用半导体元件上的表面电极。
4.根据权利要求1至3中的任一项所述的电力用半导体装置的制造方法，其特征在于，
所述突起由与所述电极层不同的材料构成。
5.根据权利要求1至3中的任一项所述的电力用半导体装置的制造方法，其特征在于，
所述突起的前端部的形状在与所述超声波振动的方向垂直的方向上宽度宽。
6.根据权利要求1至3中的任一项所述的电力用半导体装置的制造方法，其特征在于，
所述突起的外周部是与所述电极端子对应的凹部形状。
7.根据权利要求1至3中的任一项所述的电力用半导体装置的制造方法，其特征在于，
所述突起具有使用线状或者板状的部件的环形状。
8.根据权利要求1至3中的任一项所述的电力用半导体装置的制造方法，其特征在于，
所述突起形成为密度比所述电极层低。
9.根据权利要求1至3中的任一项所述的电力用半导体装置的制造方法，其特征在于，
所述电极端子在载置于所述突起的前端部的位置处具有凹部或者贯通孔。
10.一种电力用半导体装置，其特征在于，
利用权利要求1至9中的任一项所述的电力用半导体装置的制造方法来制造。
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