JP5542567B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP5542567B2 JP5542567B2 JP2010168079A JP2010168079A JP5542567B2 JP 5542567 B2 JP5542567 B2 JP 5542567B2 JP 2010168079 A JP2010168079 A JP 2010168079A JP 2010168079 A JP2010168079 A JP 2010168079A JP 5542567 B2 JP5542567 B2 JP 5542567B2
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- Prior art keywords
- buffer plate
- linear expansion
- expansion coefficient
- semiconductor element
- wiring member
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims description 228
- 239000000463 material Substances 0.000 claims description 101
- 229910000679 solder Inorganic materials 0.000 claims description 52
- 239000000758 substrate Substances 0.000 claims description 21
- 125000006850 spacer group Chemical group 0.000 claims description 12
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 11
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 7
- 239000002245 particle Substances 0.000 claims description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 3
- 239000010432 diamond Substances 0.000 claims description 3
- 229910003460 diamond Inorganic materials 0.000 claims description 3
- 229910002601 GaN Inorganic materials 0.000 claims description 2
- 238000005245 sintering Methods 0.000 claims 1
- 230000035882 stress Effects 0.000 description 137
- 238000005304 joining Methods 0.000 description 21
- 230000008646 thermal stress Effects 0.000 description 20
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 19
- 229910052782 aluminium Inorganic materials 0.000 description 19
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 19
- 229910052802 copper Inorganic materials 0.000 description 17
- 239000010949 copper Substances 0.000 description 17
- 239000000956 alloy Substances 0.000 description 10
- 230000008859 change Effects 0.000 description 10
- 229910001374 Invar Inorganic materials 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 229910045601 alloy Inorganic materials 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000011324 bead Substances 0.000 description 6
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- 238000000034 method Methods 0.000 description 6
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- 229910052759 nickel Inorganic materials 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
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- 238000005219 brazing Methods 0.000 description 2
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- 229910052751 metal Inorganic materials 0.000 description 2
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- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
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- 230000001052 transient effect Effects 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229920006015 heat resistant resin Polymers 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000005382 thermal cycling Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
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Description
図1は、本発明の実施の形態1にかかる電力用半導体装置を説明するためのもので、電力用半導体装置のうちの、絶縁基板の回路パターンに接合、つまり実装されるとともに、上面に応力緩衝機能を有する電極部材が接合された半導体素子と、電極部材を介して半導体素子と絶縁基板の他の回路パターン部分とを電気接続する1本のボンディングワイヤ部分を示しており、図1(a)は上面図、図1(b)は図1(a)のA−A線による断面図である。なお、2つの応力緩衝板を接合材を介して層状に張り合わされたものを電極部材と呼んでいるが、必ずしも電極部材単体として存在する必要はなく、半導体装置内で電極部材に相当する部分が構成されていればよい。また、表裏に回路パターンを有する絶縁性セラミックス板全体を絶縁基板と呼ぶことにする。
半導体素子3の線膨張係数をαC、応力緩衝板7Aの線膨張係数をαBA、応力緩衝板7Bの線膨張係数をαBB、ワイヤ4の線膨張係数をαWとすると、各部材の線膨張係数が、式(1)に示すように、半導体素子3からワイヤ4にかけて順次大きくなるように応力緩衝板7A、7Bの線膨張係数を調整している。
αC<αBA<αBB<αW ・・・(1)
ただし、ここでは応力緩衝板によく用いられるインバー合金の線膨張係数の温度依存性を考慮して、常温である20℃での線膨張係数を基準とする。
電極部材7の接合に用いるはんだ6内では、パワーサイクルにともなう繰り返し熱疲労により、クラックが進展する。はんだ6が接合する部材間の線膨張係数の差が大きい場合は、接合面に平行な水平方向に亀裂が進展して応力緩衝板7A、7Bが剥離してしまうが、線膨張係数の差が小さい場合は、接合面に垂直な方向に亀裂が進展する現象がみられる。すなわち、半導体素子側の応力緩衝板7Aの線膨張係数αBAを半導体素子3の線膨張係数αCに近づけることにより、オン、オフを繰り返すことで生じる温度サイクルにともなうはんだ6aにかかる水平方向の亀裂を生じさせる熱応力を小さくすることができる。使用温度範囲内で両者の線膨張係数差(αBA−αC)が5ppm/Kを下回るようにすると、はんだ6aの接合面に平行なせん断応力が著しく低下し、接合面に平行に進展する亀裂が発生しにくくなる。その場合は、はんだ6aの厚み方向(接合面に垂直)に亀裂を生じることがあるが、厚み方向の亀裂は接合面方向と異なり、電気抵抗と熱伝導に対する影響が小さくて済む。すなわち、半導体素子3の固定、通電、放熱の各機能が損なわれる割合が少ないため、亀裂が生じてもただちに半導体装置の動作が停止することがなく、信頼性の高い接合を得ることが出来る。
αBA−αC<5 [ppm/K @20℃] ・・・(2)
Yb>Ya ・・・(3)
以下、詳細に説明する。
αW−αBB<8 [ppm/K @20℃] ・・・(4)
αW−αBB<13 [ppm/K @20℃] ・・・(5)
電力用半導体装置10を駆動させると、半導体素子3をはじめとする電力用半導体装置10内の様々な素子に電流が流れ、その際、電気抵抗分の電力ロスが熱へと変換され、発熱が生ずる。例えば、半導体素子3に、SiCのような高性能のワイドバンドギャップ半導体素子が用いられているような場合、電流が大きく、動作時の温度は300℃にまで達する。このとき、半導体素子3とワイヤ4間の線膨張係数に差があるので、半導体素子3と電極部材7とワイヤ4間の接合界面に熱応力が発生する。
本実施の形態2にかかる電力用半導体装置においては、電極部材を構成する応力緩衝板の平面サイズを実施の形態1にかかる電極部材と異なり、ワイヤ側のサイズを半導体素子側より大きくするようにしたものである。その他の構成部分については、実施の形態1と同様であるので説明を省略する。
本実施の形態2にかかる電力用半導体装置のアセンブリ工程においてポイントとなるのは、応力緩衝板7Aと応力緩衝板207Bの接合工程である。ワイヤ4側の応力緩衝板207Bを半導体素子3の電極面積等の制約を越えて拡大すると、半導体素子3の電極面積等に大きさを制約される半導体素子3側の応力緩衝板7Aは、応力緩衝板207Bに較べて平面寸法が小さくなることになる。したがって、実施の形態1で説明したように、電力用半導体装置の回路面の上側から外観検査しただけでは、接合確認を容易に行うことができない。そのため、本実施の形態2においては、図3に示すようにして電力用半導体装置210を製造した。
本実施の形態3にかかる電力用半導体装置においては、実施の形態2と同様にワイヤ側の応力緩衝板が半導体素子側の応力緩衝板より大きくなっており、ワイヤ側の応力緩衝板の端部は半導体素子(チップ)の外周部を乗り越える構成となっている。このような、大面積の応力緩衝板を備えた電極部材を半導体素子上に接合する際に、電極部材(とくに上側に位置する大面積の応力緩衝板)の自重による傾きを抑制するため、本実施の形態3における電力用半導体装置では、少なくとも電極部材を半導体素子に接合するときにスペーサを設置するようにした。その他の構成については、上記実施の形態2と同様であるので説明を省略する。
7 電極部材(7A 第1の緩衝板、7B 第2の緩衝板)、 8 スペーサ、 9 ビーズ(厚み保持材)、 10 (電力用)半導体装置 。
百位の数字は実施の形態による構成の相違を示す。
Claims (8)
- 絶縁基板の回路面に一方の面が接合された半導体素子と、
前記半導体素子の他方の面に形成された電極に、接合材を介して、一方の面が接合された第1の緩衝板と、
前記第1の緩衝板の他方の面に、接合材を介して、一方の面が接合された第2の緩衝板と、
前記第2の緩衝板の他方の面に接合された配線部材と、を備え、
前記第1の緩衝板は、前記半導体素子の線膨張係数と前記配線部材の線膨張係数の間であって、前記半導体素子の線膨張係数との差が第1の所定値より小さい線膨張係数を有し、
前記第2の緩衝板は、前記第1の緩衝板の線膨張係数と前記配線部材の線膨張係数の間であって、前記配線部材の線膨張係数との差が、前記第1の所定値より大きな第2の所定値より小さい線膨張係数を有し、
前記半導体素子と前記第1の緩衝板とを接合する接合材の接合後の降伏応力は、前記第1の緩衝板と前記第2の緩衝板とを接合する接合材の接合後の降伏応力よりも小さいことを特徴とする半導体装置。 - 絶縁基板の回路面に一方の面が接合された半導体素子と、
前記半導体素子の他方の面に形成された電極に、接合材を介して、一方の面が接合された第1の緩衝板と、
前記第1の緩衝板の他方の面に、接合材を介して、一方の面が接合された第2の緩衝板と、
前記第2の緩衝板の他方の面に接合された配線部材と、を備え、
前記第1の緩衝板は、前記半導体素子の線膨張係数と前記配線部材の線膨張係数の間であって、前記半導体素子の線膨張係数との差が第1の所定値より小さい線膨張係数を有し、
前記第2の緩衝板は、前記第1の緩衝板の線膨張係数と前記配線部材の線膨張係数の間であって、前記配線部材の線膨張係数との差が、前記第1の所定値より大きな第2の所定値より小さい線膨張係数を有し、
前記第2の緩衝板の面積は、前記第1の緩衝板の面積よりも大きいことを特徴とする半導体装置。 - 前記第1の緩衝板は、前記第2の緩衝板に対して偏った位置に接合され、
前記第2の緩衝板の前記第1の緩衝板からはみ出た部分と、前記絶縁基板との間にスペーサが挿入されていることを特徴とする請求項2に記載の半導体装置。 - 前記接合材に、当該接合材の厚みを保持する厚み保持材が混入されていることを特徴とする請求項3に記載の半導体装置。
- 絶縁基板の回路面に一方の面が接合された半導体素子と、
前記半導体素子の他方の面に形成された電極に、接合材を介して、一方の面が接合された第1の緩衝板と、
前記第1の緩衝板の他方の面に、接合材を介して、一方の面が接合された第2の緩衝板と、
前記第2の緩衝板の他方の面に接合された配線部材と、を備え、
前記第1の緩衝板は、前記半導体素子の線膨張係数と前記配線部材の線膨張係数の間であって、前記半導体素子の線膨張係数との差が第1の所定値より小さい線膨張係数を有し、
前記第2の緩衝板は、前記第1の緩衝板の線膨張係数と前記配線部材の線膨張係数の間であって、前記配線部材の線膨張係数との差が、前記第1の所定値より大きな第2の所定値より小さい線膨張係数を有し、
前記接合材がはんだであることを特徴とする半導体装置。 - 絶縁基板の回路面に一方の面が接合された半導体素子と、
前記半導体素子の他方の面に形成された電極に、接合材を介して、一方の面が接合された第1の緩衝板と、
前記第1の緩衝板の他方の面に、接合材を介して、一方の面が接合された第2の緩衝板と、
前記第2の緩衝板の他方の面に接合された配線部材と、を備え、
前記第1の緩衝板は、前記半導体素子の線膨張係数と前記配線部材の線膨張係数の間であって、前記半導体素子の線膨張係数との差が第1の所定値より小さい線膨張係数を有し、
前記第2の緩衝板は、前記第1の緩衝板の線膨張係数と前記配線部材の線膨張係数の間であって、前記配線部材の線膨張係数との差が、前記第1の所定値より大きな第2の所定値より小さい線膨張係数を有し、
前記接合材が焼結性の銀微粒子を含有する材料であることを特徴とする半導体装置。 - 前記半導体素子がワイドバンドギャップ半導体材料により形成されていることを特徴とする請求項1ないし6のいずれか1項に記載の半導体装置。
- 前記ワイドバンドギャップ半導体材料は、炭化ケイ素、窒化ガリウム、またはダイヤモンド、のうちのいずれかであることを特徴とする請求項7に記載の半導体装置。
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