JP6475518B2 - ウエーハの加工方法 - Google Patents
ウエーハの加工方法 Download PDFInfo
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- JP6475518B2 JP6475518B2 JP2015041175A JP2015041175A JP6475518B2 JP 6475518 B2 JP6475518 B2 JP 6475518B2 JP 2015041175 A JP2015041175 A JP 2015041175A JP 2015041175 A JP2015041175 A JP 2015041175A JP 6475518 B2 JP6475518 B2 JP 6475518B2
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- grinding
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- wheel
- light irradiation
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- 238000003672 processing method Methods 0.000 title claims description 7
- 238000000227 grinding Methods 0.000 claims description 229
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 41
- 239000002245 particle Substances 0.000 claims description 19
- 230000001590 oxidative effect Effects 0.000 claims description 15
- 239000011941 photocatalyst Substances 0.000 claims description 14
- 230000002093 peripheral effect Effects 0.000 claims description 13
- 239000006061 abrasive grain Substances 0.000 claims description 8
- 239000011230 binding agent Substances 0.000 claims description 8
- 230000001678 irradiating effect Effects 0.000 claims description 7
- 235000012431 wafers Nutrition 0.000 description 96
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 14
- 239000002184 metal Substances 0.000 description 14
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 14
- 238000000034 method Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 4
- 229910003460 diamond Inorganic materials 0.000 description 4
- 239000010432 diamond Substances 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000003028 elevating effect Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- 230000001699 photocatalysis Effects 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- 239000000969 carrier Substances 0.000 description 1
- TUJKJAMUKRIRHC-UHFFFAOYSA-N hydroxyl Chemical compound [OH] TUJKJAMUKRIRHC-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D7/00—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting otherwise than only by their periphery, e.g. by the front face; Bushings or mountings therefor
- B24D7/06—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting otherwise than only by their periphery, e.g. by the front face; Bushings or mountings therefor with inserted abrasive blocks, e.g. segmental
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/24—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding or polishing glass
- B24B7/241—Methods
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
- B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
- B24D3/28—Resins or natural or synthetic macromolecular compounds
- B24D3/285—Reaction products obtained from aldehydes or ketones
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D5/00—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting only by their periphery; Bushings or mountings therefor
- B24D5/06—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting only by their periphery; Bushings or mountings therefor with inserted abrasive blocks, e.g. segmental
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Description
図5に示すように、まず、ウエーハ表面Waの全面には、研削時にウエーハ表面Waを保護する保護テープTが貼着される。次いで、図6に示すように、保護テープTが貼着されたウエーハWの保護テープT側とチャックテーブル30の保持面300aとを対向させて位置合わせを行った後、ウエーハWを保持面300aに戴置する。そして、図示しない吸引源が生み出す吸引力が保持面300aに伝達されることにより、チャックテーブル30が保持面300a上でウエーハWを吸引保持する。
ウエーハ保持工程が終了した後、ウエーハ保持工程でチャックテーブル30に保持されたウエーハWを研削手段7で研削する研削工程を開始する。研削工程においては、まず、チャックテーブル30が、図示しないY軸方向送り手段によって図3に示す着脱領域Aから研削領域B内の研削手段7の下まで+Y方向へ移動する。
30:チャックテーブル 300:吸着部 300a:保持面 301:枠体
31:カバー
5:研削送り手段 50:ボールネジ 51:ガイドレール 52:モータ 53:昇降板 54:ホルダ
7:研削手段 70:回転軸 70a:流路 72:モータ 73:マウント 73a:ネジ 74:研削ホイール 74a:研削砥石 74b:ホイール基台 74c:ネジ穴
8:研削水供給手段 80:研削水供給源 81:配管 82:流量調整バルブ
9:光照射手段 90:光照射口 91:電源
P1:ダイヤモンド砥粒 P2:酸化チタン粒 B1:レジンバインダー
W:ウエーハ Wa:ウエーハ表面 Wb:ウエーハ裏面 T:保護テープ S:ストリート D:デバイス
A:着脱領域 B:研削領域
Claims (2)
- ウエーハの加工方法であって、
ウエーハをチャックテーブルに保持するウエーハ保持工程と、
回転軸の先端に連結されたマウントに、砥粒と光触媒粒とを混在させバインダーで固定した研削砥石と該研削砥石を自由端部に環状に配設するホイール基台とから構成される研削ホイールを装着し、ウエーハの研削すべき領域に位置づけられた該研削砥石に研削水を供給してウエーハを研削する研削工程と、から少なくとも構成され、
該研削工程において、該研削ホイールの研削砥石に該研削砥石の内周側から光触媒粒を励起させる光を照射して、供給した研削水にヒドロキシラジカルによる酸化力を与えることを特徴とするウエーハの加工方法。 - 研削装置であって、
ウエーハを保持するチャックテーブルと、
回転軸の先端に連結されたマウントに、砥粒と光触媒粒とを混在させバインダーで固定した研削砥石と該研削砥石を自由端部に環状に配設するホイール基台とから構成される研削ホイールを装着し該チャックテーブルに保持されたウエーハを研削する研削手段と、
ウエーハの研削すべき領域に位置づけられた該研削砥石に研削水を供給する研削水供給手段と、
該研削ホイールの研削砥石に光触媒粒を励起させる光を光照射口から照射して供給した研削水にヒドロキシラジカルによる酸化力を与える光照射手段と、
から少なくとも構成され、
該光照射手段は、該研削砥石の内周側に位置し、該光照射口が該研削砥石の内周側に対面する
研削装置。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015041175A JP6475518B2 (ja) | 2015-03-03 | 2015-03-03 | ウエーハの加工方法 |
TW105103291A TWI680033B (zh) | 2015-03-03 | 2016-02-02 | 研磨裝置以及晶圓的研磨方法 |
SG10201600958UA SG10201600958UA (en) | 2015-03-03 | 2016-02-10 | Grinding wheel, grinding apparatus, and method of grinding wafer |
US15/049,375 US10076825B2 (en) | 2015-03-03 | 2016-02-22 | Method of grinding wafer |
CN201610112959.3A CN105935912B (zh) | 2015-03-03 | 2016-02-29 | 磨削装置以及晶片的磨削方法 |
DE102016203319.0A DE102016203319A1 (de) | 2015-03-03 | 2016-03-01 | Schleifrad, schleifvorrichtung und verfahren zum waferschleifen |
KR1020160025135A KR102343531B1 (ko) | 2015-03-03 | 2016-03-02 | 연삭 휠, 연삭 장치 및 웨이퍼의 연삭 방법 |
Applications Claiming Priority (1)
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---|---|---|---|
JP2015041175A JP6475518B2 (ja) | 2015-03-03 | 2015-03-03 | ウエーハの加工方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016162915A JP2016162915A (ja) | 2016-09-05 |
JP6475518B2 true JP6475518B2 (ja) | 2019-02-27 |
Family
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JP2015041175A Active JP6475518B2 (ja) | 2015-03-03 | 2015-03-03 | ウエーハの加工方法 |
Country Status (7)
Country | Link |
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US (1) | US10076825B2 (ja) |
JP (1) | JP6475518B2 (ja) |
KR (1) | KR102343531B1 (ja) |
CN (1) | CN105935912B (ja) |
DE (1) | DE102016203319A1 (ja) |
SG (1) | SG10201600958UA (ja) |
TW (1) | TWI680033B (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWD179095S (zh) * | 2015-08-25 | 2016-10-21 | 荏原製作所股份有限公司 | 基板保持環 |
JP6803187B2 (ja) * | 2016-10-05 | 2020-12-23 | 株式会社ディスコ | 研削砥石のドレッシング方法 |
JP6912284B2 (ja) * | 2017-06-23 | 2021-08-04 | 株式会社ディスコ | 研削装置 |
JP6951152B2 (ja) * | 2017-08-22 | 2021-10-20 | 株式会社ディスコ | 研削装置 |
JP6974979B2 (ja) * | 2017-08-22 | 2021-12-01 | 株式会社ディスコ | 研削装置 |
JP7127972B2 (ja) * | 2017-09-05 | 2022-08-30 | 株式会社ディスコ | 加工方法 |
JP7049848B2 (ja) * | 2018-02-08 | 2022-04-07 | 株式会社ディスコ | 保持面の研削方法 |
CN109822454B (zh) * | 2019-03-27 | 2023-11-10 | 西南交通大学 | 一种模块化设计的自供紫外光源的绿色节能抛光头装置 |
CN112792669A (zh) * | 2020-12-30 | 2021-05-14 | 浙江工业大学 | 一种氧化钛光催化剂辅助金属结合剂超硬砂轮在线修锐方法 |
Family Cites Families (23)
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JPH10217189A (ja) * | 1996-09-30 | 1998-08-18 | Takashi Ono | スライス装置およびブレード |
US6435947B2 (en) * | 1998-05-26 | 2002-08-20 | Cabot Microelectronics Corporation | CMP polishing pad including a solid catalyst |
JP4028163B2 (ja) * | 1999-11-16 | 2007-12-26 | 株式会社デンソー | メカノケミカル研磨方法及びメカノケミカル研磨装置 |
JP4345746B2 (ja) * | 1999-11-16 | 2009-10-14 | 株式会社デンソー | メカノケミカル研磨装置 |
US6364744B1 (en) * | 2000-02-02 | 2002-04-02 | Agere Systems Guardian Corp. | CMP system and slurry for polishing semiconductor wafers and related method |
JP2001284303A (ja) | 2000-03-29 | 2001-10-12 | Disco Abrasive Syst Ltd | 研削装置 |
JP4823142B2 (ja) * | 2001-07-30 | 2011-11-24 | 株式会社東芝 | 半導体装置の製造方法 |
JP2003113370A (ja) * | 2001-07-30 | 2003-04-18 | Toshiba Corp | 化学的機械的研磨用スラリー、半導体装置の製造方法、半導体装置の製造装置、及び化学的機械的研磨用スラリーの取り扱い方法 |
JP2003334762A (ja) * | 2002-05-17 | 2003-11-25 | Isel Co Ltd | 砥石ならびに該砥石を用いた研削加工法および研削盤 |
JP3737787B2 (ja) * | 2002-07-16 | 2006-01-25 | 株式会社東芝 | 半導体装置の製造方法 |
JP4116352B2 (ja) * | 2002-07-18 | 2008-07-09 | 株式会社ノリタケカンパニーリミテド | 研磨体およびその研磨体を用いた研磨加工方法 |
TWI231523B (en) * | 2003-06-18 | 2005-04-21 | Hon Hai Prec Ind Co Ltd | Method of cleaning surface of semiconductor wafer |
JP4631021B2 (ja) * | 2004-03-12 | 2011-02-16 | 株式会社ディスコ | 研磨装置 |
TWI382893B (zh) * | 2005-07-07 | 2013-01-21 | Univ Kumamoto Nat Univ Corp | 基板及其研磨方法、和研磨裝置 |
JP4791774B2 (ja) * | 2005-07-25 | 2011-10-12 | 株式会社ディスコ | ウェーハの加工方法及び研削装置 |
JP4752072B2 (ja) * | 2005-11-30 | 2011-08-17 | 国立大学法人埼玉大学 | 研磨方法及び研磨装置 |
JP2007243112A (ja) * | 2006-03-13 | 2007-09-20 | Disco Abrasive Syst Ltd | ウェーハの凹状加工方法及び凹凸吸収パッド |
JPWO2008108463A1 (ja) * | 2007-03-07 | 2010-06-17 | 大西 一正 | 研磨具及び研磨装置 |
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JP3174409U (ja) * | 2011-11-29 | 2012-03-22 | 株式会社フォーエバー | ダイアモンド粒子含有刃物 |
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-
2015
- 2015-03-03 JP JP2015041175A patent/JP6475518B2/ja active Active
-
2016
- 2016-02-02 TW TW105103291A patent/TWI680033B/zh active
- 2016-02-10 SG SG10201600958UA patent/SG10201600958UA/en unknown
- 2016-02-22 US US15/049,375 patent/US10076825B2/en active Active
- 2016-02-29 CN CN201610112959.3A patent/CN105935912B/zh active Active
- 2016-03-01 DE DE102016203319.0A patent/DE102016203319A1/de active Pending
- 2016-03-02 KR KR1020160025135A patent/KR102343531B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
TW201707848A (zh) | 2017-03-01 |
TWI680033B (zh) | 2019-12-21 |
KR102343531B1 (ko) | 2021-12-28 |
CN105935912B (zh) | 2020-05-15 |
US20160256981A1 (en) | 2016-09-08 |
SG10201600958UA (en) | 2016-10-28 |
DE102016203319A1 (de) | 2016-09-08 |
US10076825B2 (en) | 2018-09-18 |
JP2016162915A (ja) | 2016-09-05 |
KR20160107116A (ko) | 2016-09-13 |
CN105935912A (zh) | 2016-09-14 |
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