JP6475518B2 - Wafer processing method - Google Patents

Wafer processing method Download PDF

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JP6475518B2
JP6475518B2 JP2015041175A JP2015041175A JP6475518B2 JP 6475518 B2 JP6475518 B2 JP 6475518B2 JP 2015041175 A JP2015041175 A JP 2015041175A JP 2015041175 A JP2015041175 A JP 2015041175A JP 6475518 B2 JP6475518 B2 JP 6475518B2
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grinding
wafer
grinding wheel
wheel
light irradiation
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JP2016162915A (en
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研二 竹之内
研二 竹之内
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Disco Corp
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Priority to JP2015041175A priority Critical patent/JP6475518B2/en
Priority to TW105103291A priority patent/TWI680033B/en
Priority to SG10201600958UA priority patent/SG10201600958UA/en
Priority to US15/049,375 priority patent/US10076825B2/en
Priority to CN201610112959.3A priority patent/CN105935912B/en
Priority to DE102016203319.0A priority patent/DE102016203319A1/en
Priority to KR1020160025135A priority patent/KR102343531B1/en
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D7/00—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting otherwise than only by their periphery, e.g. by the front face; Bushings or mountings therefor
    • B24D7/06—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting otherwise than only by their periphery, e.g. by the front face; Bushings or mountings therefor with inserted abrasive blocks, e.g. segmental
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/24—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding or polishing glass
    • B24B7/241—Methods
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
    • B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
    • B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
    • B24D3/28—Resins or natural or synthetic macromolecular compounds
    • B24D3/285—Reaction products obtained from aldehydes or ketones
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D5/00—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting only by their periphery; Bushings or mountings therefor
    • B24D5/06—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting only by their periphery; Bushings or mountings therefor with inserted abrasive blocks, e.g. segmental
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Description

本発明は、被加工物を研削する研削ホイールを備える研削装置及びウエーハの加工方法に関する。 The present invention relates to a grinding apparatus including a grinding wheel for grinding a workpiece and a wafer processing method.

ＩＣ、ＬＳＩ、ＬＥＤ及びＳＡＷデバイス等のデバイスが分割予定ライン（ストリート）によって区画され表面に形成されたウエーハは、研削ホイールを回転可能に備えた研削装置によってウエーハ裏面が研削され所定の厚みに形成された後、ダイシング装置、レーザー加工装置等の分割装置によって個々のデバイスに分割され、各種電子機器等に利用されている。   Wafers with IC, LSI, LED and SAW devices, etc., which are defined on the surface by dividing lines (streets) and formed on the surface are ground to a predetermined thickness by grinding the back surface of the wafer with a grinding device that can rotate a grinding wheel. After being divided, it is divided into individual devices by a dividing device such as a dicing device or a laser processing device, and is used for various electronic devices.

また、研削装置は、ウエーハを保持するチャックテーブルと、チャックテーブルに保持されたウエーハを研削する研削砥石が環状に配設された研削ホイールを回転可能に装着した研削手段と、研削領域に研削水を供給する研削水供給手段と、研削手段をチャックテーブルに接近及び離反させる研削送り手段と、から概ね構成されており、ウエーハを高精度に所望の厚みに研削することができる（例えば、特許文献１参照）。   The grinding apparatus also includes a chuck table for holding a wafer, a grinding means for rotatably mounting a grinding wheel in which a grinding wheel for grinding the wafer held on the chuck table is annularly arranged, and a grinding water in the grinding area. Is generally composed of a grinding water supply means for supplying the wafer and a grinding feed means for causing the grinding means to approach and separate from the chuck table, so that the wafer can be ground to a desired thickness with high precision (for example, Patent Documents). 1).

特開２００１−２８４３０３号公報JP 2001-284303 A

しかし、ウエーハが窒化ガリウム（ＧａＮ）、シリコンカーバイド（ＳｉＣ）またはガリウムヒ素（ＧａＡｓ）等の難削材で形成されている場合には、研削ホイールの研削能力が低下し、生産性が低下するという問題がある。また、金属で形成されたウエーハまたは金属電極が部分的にウエーハの裏面に露出したウエーハを研削する場合は、金属の延性によって研削が困難となるという問題がある。   However, when the wafer is made of a difficult-to-cut material such as gallium nitride (GaN), silicon carbide (SiC), or gallium arsenide (GaAs), the grinding ability of the grinding wheel is reduced, and the productivity is reduced. There's a problem. Further, when grinding a wafer formed of metal or a wafer in which a metal electrode is partially exposed on the back surface of the wafer, there is a problem that grinding becomes difficult due to the ductility of the metal.

したがって、難削材で形成されたウエーハまたは金属を含むウエーハを研削する場合においては、円滑に研削できるようにするという課題がある。   Therefore, when grinding a wafer formed of a difficult-to-cut material or a wafer containing a metal, there is a problem of enabling smooth grinding.

上記課題を解決するための本発明は、ウエーハの加工方法であって、ウエーハをチャックテーブルに保持するウエーハ保持工程と、回転軸の先端に連結されたマウントに、砥粒と光触媒粒とを混在させバインダーで固定した研削砥石と該研削砥石を自由端部に環状に配設するホイール基台とから構成される研削ホイールを装着し、ウエーハの研削すべき領域に位置づけられた該研削砥石に研削水を供給してウエーハを研削する研削工程と、から少なくとも構成され、該研削工程において、該研削ホイールの研削砥石に該研削砥石の内周側から光触媒粒を励起させる光を照射して、供給した研削水にヒドロキシラジカルによる酸化力を与えることを特徴とするウエーハの加工方法である。 The present invention for solving the above problems is a wafer processing method, in which a wafer holding step for holding a wafer on a chuck table and a mount connected to the tip of a rotating shaft are mixed with abrasive grains and photocatalyst grains. is not a fixed grinding wheel and the grinding grindstone with a binder grinding wheel composed of a wheel base to be disposed annularly attached to the free end portion, the grinding to the grinding wheel positioned in the area to be ground of the wafer a grinding step of grinding the wafer by supplying water, at least consists, in the grinding step, by irradiating light for exciting the photocatalyst particles from the inner peripheral side of the grinding whetstone grinding wheel of the grinding wheel, feed A method for processing a wafer, characterized in that an oxidizing power by hydroxy radicals is given to the ground grinding water.

さらに、上記課題を解決するための本発明は、研削装置であって、ウエーハを保持するチャックテーブルと、回転軸の先端に連結されたマウントに、砥粒と光触媒粒とを混在させバインダーで固定した研削砥石と該研削砥石を自由端部に環状に配設するホイール基台とから構成される研削ホイールを装着し該チャックテーブルに保持されたウエーハを研削する研削手段と、ウエーハの研削すべき領域に位置づけられた該研削砥石に研削水を供給する研削水供給手段と、該研削ホイールの研削砥石に光触媒粒を励起させる光を光照射口から照射して供給した研削水にヒドロキシラジカルによる酸化力を与える光照射手段と、から少なくとも構成され、該光照射手段は、該研削砥石の内周側に位置し、該光照射口が該研削砥石の内周側に対面する研削装置である。 Furthermore, the present invention for solving the above-mentioned problems is a grinding apparatus, in which abrasive grains and photocatalyst grains are mixed and fixed with a binder to a chuck table for holding a wafer and a mount connected to the tip of a rotating shaft. A grinding means for grinding a wafer held by the chuck table by mounting a grinding wheel comprising a grinding wheel and a wheel base that annularly arranges the grinding wheel at a free end, and the wafer should be ground and the grinding water supply means for supplying grinding water to the grinding wheel positioned in the region, oxidation by hydroxyl radicals in the grinding water supplied by irradiating light for exciting the photocatalyst particles in the grinding wheel of the grinding wheel from the light irradiation ports a light irradiation means for applying a force, at least consists of, the light irradiation means is positioned on the inner peripheral side of the grinding grindstone, light irradiation port faces the inner peripheral side of the grinding whetstone It is a cutting apparatus.

さらに、本発明に係るウエーハの加工方法は、前記研削ホイールを用いるウエーハの研削工程において、ウエーハの研削すべき領域に位置づけられた前記研削砥石に研削水を供給すると共に、前記研削砥石に光触媒粒を励起させる光を照射させることで、研削砥石に供給した研削水と励起した光触媒粒とを接触させ、研削水にヒドロキシラジカルによる高い酸化力を与える。そして、例えば、被加工物がＧａＮ、またはＧａＡｓ等の難削材で形成されたウエーハであっても、ヒドロキシラジカルの強い酸化力によってウエーハの研削面を酸化させて脆弱化させながら研削を行うことができるため、ウエーハを円滑に研削することが可能となる。また、被加工物が金属で形成されたウエーハまたは金属電極が部分的にウエーハの裏面に露出したウエーハであっても、ヒドロキシラジカルによる強い酸化力によって金属を酸化させて脆弱化させながら研削を行うことができるため、ウエーハを円滑に研削することが可能となる。   Further, in the wafer processing method according to the present invention, in the wafer grinding process using the grinding wheel, the grinding water is supplied to the grinding wheel positioned in the region to be ground of the wafer, and the photocatalytic particles are applied to the grinding wheel. By irradiating with light that excites, the grinding water supplied to the grinding wheel is brought into contact with the excited photocatalyst particles, and the grinding water is given high oxidizing power by hydroxy radicals. For example, even if the workpiece is a wafer formed of a difficult-to-cut material such as GaN or GaAs, grinding is performed while oxidizing and weakening the ground surface of the wafer by the strong oxidizing power of hydroxy radicals. Therefore, the wafer can be ground smoothly. In addition, even if the workpiece is a wafer formed of metal or a wafer in which the metal electrode is partially exposed on the back surface of the wafer, grinding is performed while the metal is oxidized and weakened by the strong oxidizing power of hydroxyl radicals. Therefore, the wafer can be ground smoothly.

また、本発明に係る研削装置では、前記研削ホイールを備える研削手段と、ウエーハの研削すべき領域に位置づけられた前記研削ホイールの研削砥石に研削水を供給する研削水供給手段と、前記研削ホイールの研削砥石に光触媒粒を励起させる光を照射して供給した研削水にヒドロキシラジカルによる酸化力を与える光照射手段と、から少なくとも構成されるため、研削に際して研削砥石に光触媒粒を励起させる光を照射させることで、研削砥石に供給した研削水と励起した光触媒粒とを接触させ、供給した研削水にヒドロキシラジカルによる酸化力を与えることができる。そして、生成させたヒドロキシラジカルにより、例えば、被加工物がＧａＮ、またはＧａＡｓ等の難削材で形成されたウエーハであっても、ヒドロキシラジカルの強い酸化力によってウエーハの研削面を酸化させて脆弱化させながら研削を行うことができるため、ウエーハを円滑に研削することが可能となる。また、被加工物が金属で形成されたウエーハまたは金属電極が部分的にウエーハの裏面に露出したウエーハであっても、ヒドロキシラジカルによる強い酸化力によって金属を酸化させて脆弱化させながら研削を行うことができるため、ウエーハを円滑に研削することが可能となる。   Further, in the grinding apparatus according to the present invention, a grinding means including the grinding wheel, a grinding water supply means for supplying grinding water to a grinding wheel of the grinding wheel positioned in a region to be ground of the wafer, and the grinding wheel Light irradiation means that irradiates the grinding wheel with light that excites photocatalyst grains and supplies the grinding water supplied with oxidizing power by hydroxy radicals, so that the grinding wheel is irradiated with light that excites the photocatalyst grains during grinding. By irradiating, the grinding water supplied to the grinding wheel can be brought into contact with the excited photocatalyst particles, and the supplied grinding water can be given an oxidizing power by hydroxy radicals. Then, even if the workpiece is a wafer formed of a difficult-to-cut material such as GaN or GaAs, the ground surface of the wafer is oxidized by the strong oxidizing power of the hydroxyl radical and is brittle. Since it is possible to perform grinding while making it possible, the wafer can be ground smoothly. In addition, even if the workpiece is a wafer formed of metal or a wafer in which the metal electrode is partially exposed on the back surface of the wafer, grinding is performed while the metal is oxidized and weakened by the strong oxidizing power of hydroxyl radicals. Therefore, the wafer can be ground smoothly.

研削ホイールの斜視図である。It is a perspective view of a grinding wheel. 研削ホイールが備える研削砥石の一部を拡大した正面図である。It is the front view which expanded a part of grinding wheel with which a grinding wheel is provided. 研削装置の斜視図である。It is a perspective view of a grinding device. 光照射手段が一体となった研削ホイールの一例を示す端面図である。It is an end elevation which shows an example of the grinding wheel with which the light irradiation means was united. ウエーハ表面に保護テープが貼着される状態を示す斜視図である。It is a perspective view which shows the state by which a protective tape is stuck on the wafer surface. ウエーハ保持工程において、ウエーハをチャックテーブルに保持する状態を示す斜視図である。It is a perspective view which shows the state which hold | maintains a wafer to a chuck | zipper table in a wafer holding process. 研削工程において、チャックテーブルに保持されたウエーハに対して研削ホイールが降下していく際の光照射手段の位置を示す斜視図である。It is a perspective view which shows the position of the light irradiation means when a grinding wheel descend | falls with respect to the wafer hold | maintained at the chuck table in a grinding process. 研削工程において、チャックテーブルに保持されたウエーハを研削ホイールで研削している状態を示す斜視図である。It is a perspective view which shows the state which grinds the wafer hold | maintained at the chuck table with the grinding wheel in a grinding process. 研削工程において、チャックテーブルに保持されたウエーハを研削ホイールで研削している状態を示す端面図である。It is an end elevation which shows the state which grinds the wafer hold | maintained at the chuck table with the grinding wheel in a grinding process.

図１に示す研削ホイール７４は、環状のホイール基台７４ｂと、ホイール基台７４ｂの底面（自由端部）に環状に配設された複数の略直方体形状の研削砥石７４ａとから構成される。また、ホイール基台７４ｂの上面にはネジ穴７４ｃが設けられている。研削砥石７４ａは、図２に示すように、ダイヤモンド砥粒Ｐ１と光触媒粒である酸化チタン粒Ｐ２とを混在させ、フェノール樹脂のレジンバインダーＢ１で成型・固定したものである。なお、研削砥石７４ａの形状は、一体の環状を形成しているものでもよい。   The grinding wheel 74 shown in FIG. 1 includes an annular wheel base 74b and a plurality of substantially rectangular parallelepiped-shaped grinding wheels 74a disposed in an annular shape on the bottom surface (free end) of the wheel base 74b. A screw hole 74c is provided on the upper surface of the wheel base 74b. As shown in FIG. 2, the grinding wheel 74a is made by mixing diamond abrasive grains P1 and titanium oxide grains P2 as photocatalyst grains, and molding and fixing them with a resin binder B1 of phenol resin. In addition, the shape of the grinding wheel 74a may form an integral annular shape.

研削ホイール７４の製造方法は、例えば以下のとおりである。まず、レジンバインダーＢ１となるフェノール樹脂重量比１００に対して、粒径１０μｍ前後のダイヤモンド砥粒Ｐ１を重量比３０で混入し、さらに粒径１０μｍ前後の酸化チタン粒Ｐ２を重量比４０で混入し攪拌して混在させる。次いで、この混合物を約１６０℃の温度で加熱し、１０〜２０分程度プレスし所定の形状に成型する。その後、１８０℃から２００℃の温度で数時間焼結させることで、研削砥石７４ａを製造する。そして、製造した複数の研削砥石７４ａをホイール基台７４ｂの底面に環状に配設し固着することで、研削ホイール７４を製造する。なお、レジンバインダーＢ１、ダイヤモンド砥粒Ｐ１及び酸化チタン粒Ｐ２の重量比は、酸化チタンＰ２の種類等によって適宜変更可能である。   The manufacturing method of the grinding wheel 74 is as follows, for example. First, with respect to 100 weight ratio of phenol resin as resin binder B1, diamond abrasive grains P1 having a particle size of about 10 μm are mixed at a weight ratio of 30 and further titanium oxide particles P2 having a particle diameter of about 10 μm are mixed at a weight ratio of 40. Stir and mix. Next, the mixture is heated at a temperature of about 160 ° C. and pressed for about 10 to 20 minutes to form a predetermined shape. Thereafter, the grinding wheel 74a is manufactured by sintering at a temperature of 180 ° C. to 200 ° C. for several hours. And the grinding wheel 74 is manufactured by arrange | positioning to the bottom face of the wheel base 74b, and adhering the manufactured some grinding stones 74a cyclically | annularly. Note that the weight ratio of the resin binder B1, the diamond abrasive grains P1, and the titanium oxide grains P2 can be appropriately changed depending on the type of the titanium oxide P2.

図３に示すウエーハＷは、例えば、ＳｉＣで形成される半導体ウエーハであり、ウエーハＷのウエーハ表面Ｗａ上は、図５に示すようにストリートＳによって区画された格子状の領域に多数のデバイスＤが形成されている。そして、例えば、ウエーハＷのウエーハ裏面Ｗｂが研削ホイール７４で研削される。なお、ウエーハＷの形状及び種類は特に限定されるものではなく、研削ホイール７４との関係で適宜変更可能であり、ＧａＡＳまたはＧａＮ等の難削材で形成されるウエーハや、金属で形成されたウエーハまたは金属電極が部分的にウエーハの裏面に露出したウエーハも含まれる。   The wafer W shown in FIG. 3 is a semiconductor wafer formed of, for example, SiC. On the wafer surface Wa of the wafer W, a large number of devices D are arranged in a lattice area partitioned by streets S as shown in FIG. Is formed. Then, for example, the wafer back surface Wb of the wafer W is ground by the grinding wheel 74. The shape and type of the wafer W are not particularly limited, and can be appropriately changed in relation to the grinding wheel 74. The wafer W is formed of a wafer formed of a difficult-to-cut material such as GaAS or GaN, or a metal. A wafer having a wafer or metal electrode partially exposed on the back surface of the wafer is also included.

図３に示す研削装置１は、ウエーハを保持するチャックテーブル３０と、回転軸７０の先端に連結されたマウント７３に図１に示した研削ホイール７４を装着しチャックテーブル３０に保持されたウエーハを研削する研削手段７と、ウエーハの研削すべき領域に位置づけられた研削砥石７４ａに研削水を供給する研削水供給手段８と、研削ホイール７４の研削砥石７４ａに光触媒粒を励起させる光を照射して供給した研削水にヒドロキシラジカルによる酸化力を与える光照射手段９とから少なくとも構成されている。そして、研削装置１のベース１０上の前方は、チャックテーブル３０に対してウエーハＷの着脱が行われる領域である着脱領域Ａとなっており、ベース１０上の後方は、研削手段７によりウエーハＷの研削が行われる領域である研削領域Ｂとなっている。   The grinding apparatus 1 shown in FIG. 3 includes a chuck table 30 that holds a wafer, and a wafer 73 held on the chuck table 30 by mounting the grinding wheel 74 shown in FIG. 1 on a mount 73 connected to the tip of a rotary shaft 70. The grinding means 7 for grinding, the grinding water supply means 8 for supplying the grinding water to the grinding wheel 74a positioned in the region to be ground on the wafer, and the grinding wheel 74a of the grinding wheel 74 are irradiated with light for exciting the photocatalyst particles. And at least light irradiation means 9 for giving an oxidizing power by hydroxy radicals to the supplied grinding water. The front of the grinding apparatus 1 on the base 10 is an attachment / detachment area A that is an area in which the wafer W is attached to and detached from the chuck table 30, and the rear of the base 10 is moved by the grinding means 7. This is a grinding region B, which is a region where the above grinding is performed.

チャックテーブル３０は、例えば、その外形が円形状であり、ウエーハＷを吸着する吸着部３００と、吸着部３００を支持する枠体３０１とを備える。吸着部３００は図示しない吸引源に連通し、吸着部３００の露出面である保持面３００ａ上でウエーハＷを吸引保持する。チャックテーブル３０は、カバー３１によって周囲から囲まれ、図示しない回転手段により回転可能に支持されている。また、チャックテーブル３０は、カバー３１の下に配設された図示しないＹ軸方向送り手段によって、着脱領域Ａと研削領域Ｂとの間をＹ軸方向に往復移動可能となっている。   The chuck table 30 has, for example, a circular outer shape, and includes a suction unit 300 that sucks the wafer W and a frame body 301 that supports the suction unit 300. The suction unit 300 communicates with a suction source (not shown), and sucks and holds the wafer W on a holding surface 300 a that is an exposed surface of the suction unit 300. The chuck table 30 is surrounded by a cover 31 from the periphery, and is rotatably supported by a rotating means (not shown). The chuck table 30 can be reciprocated in the Y-axis direction between the attachment / detachment area A and the grinding area B by a Y-axis direction feeding means (not shown) disposed under the cover 31.

研削領域Ｂには、コラム１１が立設されており、コラム１１の側面には研削送り手段５が配設されている。研削送り手段５は、鉛直方向（Ｚ軸方向）の軸心を有するボールネジ５０と、ボールネジ５０と平行に配設された一対のガイドレール５１と、ボールネジ５０の上端に連結しボールネジ５０を回動させるモータ５２と、内部のナットがボールネジ５０に螺合し側部がガイドレールに摺接する昇降板５３と、昇降板５３に連結され研削手段７を保持するホルダ５４とから構成され、モータ５２がボールネジ５０を回動させると、これに伴い昇降板５３がガイドレール５１にガイドされてＺ軸方向に往復移動し、ホルダ５４に保持された研削手段７がＺ軸方向に研削送りされる。   A column 11 is erected in the grinding region B, and a grinding feed means 5 is disposed on the side surface of the column 11. The grinding feed means 5 is connected to a ball screw 50 having a vertical (Z-axis direction) axis center, a pair of guide rails 51 arranged in parallel to the ball screw 50, and an upper end of the ball screw 50, and rotates the ball screw 50. Motor 52, an elevating plate 53 whose inner nut is screwed into ball screw 50, and a side portion is in sliding contact with the guide rail, and a holder 54 that is connected to elevating plate 53 and holds grinding means 7 is provided. When the ball screw 50 is rotated, the lifting plate 53 is guided by the guide rail 51 and reciprocated in the Z-axis direction, and the grinding means 7 held by the holder 54 is ground and fed in the Z-axis direction.

図３に示す研削手段７は、軸方向がＺ軸方向である回転軸７０と、回転軸７０を回転駆動するモータ７２と、回転軸７０の先端に連結されたマウント７３と、マウント７３の下面に着脱可能に装着された研削ホイール７４とを備える。研削ホイール７４は、ネジ７３ａをマウント７３に設けられた穴に通して研削ホイール７４の上面に設けられた図１に示すネジ穴７４ｃに螺合させることにより、マウント７３に対して装着される。また、図３に示すように回転軸７０の軸心には、研削水を流通させる流路７０ａが形成されており、流路７０ａは、マウント７３を通り研削ホイール７４において下方に開口しているとともに、研削水供給源８０に接続される配管８１に連通している。   3 includes a rotary shaft 70 whose axial direction is the Z-axis direction, a motor 72 that rotationally drives the rotary shaft 70, a mount 73 that is connected to the tip of the rotary shaft 70, and a lower surface of the mount 73. And a grinding wheel 74 that is detachably mounted. The grinding wheel 74 is attached to the mount 73 by passing a screw 73 a through a hole provided in the mount 73 and screwing it into a screw hole 74 c shown in FIG. 1 provided on the upper surface of the grinding wheel 74. Further, as shown in FIG. 3, a flow path 70 a for circulating grinding water is formed at the center of the rotating shaft 70, and the flow path 70 a opens downward in the grinding wheel 74 through the mount 73. At the same time, it communicates with a pipe 81 connected to a grinding water supply source 80.

図３に示す研削水供給手段８は、例えば、水源となる研削水供給源８０と、研削水供給源８０に接続され流路７０ａと連通する配管８１と、配管８１の任意の位置に配設され研削水の流量を調整する流量調整バルブ８２とを備える。   The grinding water supply means 8 shown in FIG. 3 is disposed at any position of the piping 81, for example, a grinding water supply source 80 serving as a water source, a pipe 81 connected to the grinding water supply source 80 and communicating with the flow path 70a. And a flow rate adjusting valve 82 for adjusting the flow rate of the grinding water.

図３に示すように、例えば、光照射手段９は、研削ホイール７４とは分離した形で研削装置１に備えられる。光照射手段９は、例えば、波長が２８０ｎｍ〜３８０ｎｍ程度の紫外線を、光照射口９０から照射できる略円弧状の紫外線照射ランプであり、電源９１に接続されている。そして図９に示すように、光照射手段９は、研削ホイール７４によりウエーハＷを研削する研削工程において、ホイール基台７４ｂの底面（自由端部）に環状に配設された研削砥石７４ａの内周側に位置するように配設され、光照射口９０が研削砥石７４ａの内周側に対面し、研削砥石７４ａ中の酸化チタン粒Ｐ２を励起させる紫外線を光照射口９０から照射する。なお、光照射手段９は、酸化チタン粒Ｐ２の種類によっては、紫外線を照射する紫外線照射ランプに限定されるものではなく、例えば、酸化チタン粒Ｐ２が、可視光線の照射で光触媒活性を発現する窒素をドープした窒素ドープ型酸化チタン粒等であれば、波長４００ｎｍ〜７４０ｎｍ程度の可視光線を照射するキセノンランプや蛍光灯等でもよい。また、光照射手段９は、その形状が略円弧状に限定されず例えば環状であってもよく、研削ホイール７４によるウエーハＷの研削工程において、ホイール基台７４ｂの底面（自由端部）に環状に配設された研削砥石７４ａの外周側に位置するように配設されてもよく、光照射口９０から照射された紫外線が分散せずに研削砥石７４ａに対して直接入射する位置に配設されると好ましい。   As shown in FIG. 3, for example, the light irradiation means 9 is provided in the grinding apparatus 1 in a form separated from the grinding wheel 74. The light irradiation means 9 is a substantially arc-shaped ultraviolet irradiation lamp that can irradiate ultraviolet light having a wavelength of about 280 nm to 380 nm from the light irradiation port 90, for example, and is connected to a power source 91. As shown in FIG. 9, the light irradiating means 9 includes a grinding wheel 74a disposed in an annular shape on the bottom surface (free end) of the wheel base 74b in the grinding step of grinding the wafer W by the grinding wheel 74. It arrange | positions so that it may be located in the peripheral side, the light irradiation port 90 faces the inner peripheral side of the grinding stone 74a, and irradiates the ultraviolet light which excites the titanium oxide particle P2 in the grinding wheel 74a from the light irradiation port 90. The light irradiation means 9 is not limited to an ultraviolet irradiation lamp that irradiates ultraviolet rays depending on the type of the titanium oxide particles P2. For example, the titanium oxide particles P2 exhibit photocatalytic activity when irradiated with visible light. A nitrogen-doped titanium oxide grain doped with nitrogen may be a xenon lamp or a fluorescent lamp that emits visible light having a wavelength of about 400 nm to 740 nm. Further, the light irradiation means 9 is not limited to a substantially arc shape, and may be, for example, an annular shape. In the grinding process of the wafer W by the grinding wheel 74, the light irradiation means 9 is annular on the bottom surface (free end) of the wheel base 74b. It may be disposed so as to be located on the outer peripheral side of the grinding wheel 74a disposed on the surface, and disposed at a position where the ultraviolet light irradiated from the light irradiation port 90 is directly incident on the grinding wheel 74a without being dispersed. It is preferred if

また、例えば図４に示すように、光照射手段９は研削ホイール７４と一体となった形で研削装置１に備えられていてもよい。図４に示すように、研削ホイール７４と一体となった形で研削装置１に備えられる光照射手段９は、例えば、波長が２８０ｎｍ〜３８０ｎｍ程度の紫外線を、光照射口９０から照射できる環状の紫外線照射ランプであり、ホイール基台７４ｂの底面かつ環状に配設された研削砥石７４ａの内周側に配設され、光照射口９０が研削砥石７４ａの内周側に対面し、マウント７３上に配設された電源９１に接続されている。マウント７３には、回転軸７０に形成された流路７０ａに連通するマウント流路７３ｂを備え、また、研削ホイール７４を構成するホイール基台７４ｂには、マウント流路７３ｂに連通しホイール基台７４ｂの下部の開口部７４ｄにおいて開口するホイール流路７４ｃが形成されている。ホイール流路７４ｃの開口部７４ｄは、光照射手段９と研削砥石７４ａとの間に研削水を噴出できる位置に配設されている。   For example, as shown in FIG. 4, the light irradiation means 9 may be provided in the grinding apparatus 1 in a form integrated with the grinding wheel 74. As shown in FIG. 4, the light irradiation means 9 provided in the grinding apparatus 1 in an integrated form with the grinding wheel 74 is, for example, an annular shape that can irradiate ultraviolet light having a wavelength of about 280 nm to 380 nm from the light irradiation port 90. An ultraviolet irradiation lamp, which is disposed on the bottom surface of the wheel base 74b and on the inner peripheral side of the grinding wheel 74a disposed in an annular shape, the light irradiation port 90 faces the inner peripheral side of the grinding wheel 74a, and on the mount 73 Is connected to a power source 91 provided in The mount 73 includes a mount channel 73b that communicates with a channel 70a formed on the rotating shaft 70. The wheel base 74b that constitutes the grinding wheel 74 includes a wheel base that communicates with the mount channel 73b. A wheel flow path 74c that opens at an opening 74d at the bottom of 74b is formed. The opening 74d of the wheel channel 74c is disposed at a position where the grinding water can be ejected between the light irradiation means 9 and the grinding wheel 74a.

以下に、図２〜３及び図５〜９を用いて、図３に示すウエーハＷを研削装置１により研削する場合の研削装置１の動作、研削ホイール７４を備える研削手段７の動作及びウエーハＷの加工方法について説明する。   2 to 3 and 5 to 9, the operation of the grinding apparatus 1 when the wafer W shown in FIG. 3 is ground by the grinding apparatus 1, the operation of the grinding means 7 including the grinding wheel 74, and the wafer W The processing method will be described.

（１）ウエーハ保持工程
図５に示すように、まず、ウエーハ表面Ｗａの全面には、研削時にウエーハ表面Ｗａを保護する保護テープＴが貼着される。次いで、図６に示すように、保護テープＴが貼着されたウエーハＷの保護テープＴ側とチャックテーブル３０の保持面３００ａとを対向させて位置合わせを行った後、ウエーハＷを保持面３００ａに戴置する。そして、図示しない吸引源が生み出す吸引力が保持面３００ａに伝達されることにより、チャックテーブル３０が保持面３００ａ上でウエーハＷを吸引保持する。 (1) Wafer Holding Step As shown in FIG. 5, first, a protective tape T that protects the wafer surface Wa during grinding is attached to the entire surface of the wafer surface Wa. Next, as shown in FIG. 6, after the wafer W to which the protective tape T has been attached is aligned with the holding surface 300a of the chuck table 30 facing the protective tape T side, the wafer W is held on the holding surface 300a. Placed in. Then, the suction force generated by a suction source (not shown) is transmitted to the holding surface 300a, whereby the chuck table 30 sucks and holds the wafer W on the holding surface 300a.

（２）研削工程
ウエーハ保持工程が終了した後、ウエーハ保持工程でチャックテーブル３０に保持されたウエーハＷを研削手段７で研削する研削工程を開始する。研削工程においては、まず、チャックテーブル３０が、図示しないＹ軸方向送り手段によって図３に示す着脱領域Ａから研削領域Ｂ内の研削手段７の下まで＋Ｙ方向へ移動する。 (2) Grinding Step After the wafer holding step is completed, a grinding step is started in which the wafer W held on the chuck table 30 in the wafer holding step is ground by the grinding means 7. In the grinding step, first, the chuck table 30 is moved in the + Y direction from the attachment / detachment area A shown in FIG. 3 to the bottom of the grinding means 7 in the grinding area B by a Y-axis direction feeding means (not shown).

次いで、図７に示すように、回転軸７０が回転し研削ホイール７４を例えば回転数６０００ｒｐｍで回転させ、同時に研削手段７が−Ｚ方向へと送られ、研削手段７に備える研削ホイール７４が−Ｚ方向へと降下していく。また、光照射手段９が、研削中にホイール基台７４ｂの底面に環状に配設された研削砥石７４ａの内周側にあり、光照射口９０が研削砥石７４ａの内周側に対面するように位置づけられる。そして、図８に示すように、高速回転する研削ホイール７４の研削砥石７４ａがウエーハＷのウエーハ裏面Ｗｂに接することにより、ウエーハＷに対する研削が行われる。さらに、研削中は、図示しない回転手段がチャックテーブル３０を例えば回転数３００ｒｐｍで回転させるのに伴って、保持面３００ａに保持されたウエーハＷも回転するので、研削砥石７４ａがウエーハ裏面Ｗｂの全面の研削加工を行う。また、本研削工程中は、図９に示すように、研削砥石７４ａがウエーハ裏面Ｗｂに接触する際に、研削水供給手段８から供給された研削水がスピンドル７０中の流路７０ａ、マウント流路７３ｂ及びホイール流路７４ｃを通り、ホイール流路７４ｃの開口部７４ｄから噴出され、研削砥石７４ａに対して５Ｌ／分〜１０Ｌ／分の割合で供給される。   Next, as shown in FIG. 7, the rotating shaft 70 rotates to rotate the grinding wheel 74 at, for example, a rotation speed of 6000 rpm. At the same time, the grinding means 7 is fed in the −Z direction, and the grinding wheel 74 included in the grinding means 7 is − It descends in the Z direction. Further, the light irradiation means 9 is located on the inner peripheral side of the grinding wheel 74a annularly disposed on the bottom surface of the wheel base 74b during grinding so that the light irradiation port 90 faces the inner peripheral side of the grinding wheel 74a. Is positioned. Then, as shown in FIG. 8, the grinding wheel 74a of the grinding wheel 74 that rotates at high speed comes into contact with the wafer back surface Wb of the wafer W, whereby the wafer W is ground. Further, during grinding, as the rotating means (not shown) rotates the chuck table 30 at, for example, a rotation speed of 300 rpm, the wafer W held on the holding surface 300a also rotates, so that the grinding wheel 74a is placed on the entire surface of the wafer back surface Wb. Grinding is performed. Further, during the main grinding process, as shown in FIG. 9, when the grinding wheel 74a comes into contact with the wafer back surface Wb, the grinding water supplied from the grinding water supply means 8 flows into the flow path 70a in the spindle 70 and the mount flow. It passes through the path 73b and the wheel channel 74c, is ejected from the opening 74d of the wheel channel 74c, and is supplied to the grinding wheel 74a at a rate of 5 L / min to 10 L / min.

さらに、図９に示すように、本研削工程中は、高速回転する研削ホイール７４の研削砥石７４ａに対して、光照射手段９が、例えば波長３６５ｎｍ程度の紫外線を、少なくとも研削砥石７４ａがウエーハ裏面Ｗｂを研削する直前から研削砥石７４ａがウエーハＷから離間するまでの間は照射し、図２に示す研削砥石７４ａに混在する酸化チタン粒Ｐ２を励起させる。すなわち、研削砥石７４ａに混在する酸化チタン粒Ｐ２の表面に紫外線を照射し、酸化チタン粒Ｐ２の価電子帯の電子を励起させ電子と正孔の２つのキャリアを生じさせる。   Furthermore, as shown in FIG. 9, during the main grinding process, the light irradiation means 9 emits ultraviolet light having a wavelength of, for example, about 365 nm, and at least the grinding wheel 74a is on the back surface of the wafer. Irradiation is performed from immediately before grinding Wb until the grinding wheel 74a is separated from the wafer W to excite the titanium oxide particles P2 mixed in the grinding wheel 74a shown in FIG. That is, the surface of the titanium oxide particles P2 mixed in the grinding wheel 74a is irradiated with ultraviolet rays to excite electrons in the valence band of the titanium oxide particles P2 to generate two carriers of electrons and holes.

研削砥石７４ａに混在する酸化チタン粒Ｐ２に生じた正孔は、酸化チタン粒Ｐ２の表面にある研削水に酸化力の高いヒドロキシラジカルを生成する。そのため、研削水供給手段８から供給され研削砥石７４ａと接触した研削水は、少なくともウエーハ裏面Ｗｂ上でヒドロキシラジカルによる酸化力を与えられる。そして、ＳｉＣで形成されたウエーハ裏面Ｗｂが、生成したヒドロキシラジカルにより酸化され脆弱化するので、ウエーハＷを研削ホイール７４で容易に研削することが可能となる。また、生じたヒドロキシラジカルの存在時間は非常に短いため、研削水によるウエーハ裏面Ｗｂ以外の酸化は生じない。また、噴射された研削水は、研削砥石７４ａとウエーハ裏面Ｗｂとの接触部位を冷却しかつウエーハ裏面Ｗｂに生じた研削屑を除去も行う。   The holes generated in the titanium oxide particles P2 mixed in the grinding wheel 74a generate hydroxy radicals having high oxidizing power in the grinding water on the surface of the titanium oxide particles P2. Therefore, the grinding water supplied from the grinding water supply means 8 and in contact with the grinding wheel 74a is given an oxidizing power by hydroxy radicals on at least the wafer back surface Wb. Since the wafer back surface Wb formed of SiC is oxidized and weakened by the generated hydroxy radicals, the wafer W can be easily ground with the grinding wheel 74. Further, since the existence time of the generated hydroxy radical is very short, oxidation other than the wafer back surface Wb by the grinding water does not occur. Further, the sprayed grinding water cools the contact portion between the grinding wheel 74a and the wafer back surface Wb, and also removes grinding waste generated on the wafer back surface Wb.

なお、本発明は上記実施形態に限定されるものではない。例えば、ウエーハＷが金属で形成されたウエーハであり、光照射手段９が研削ホイール７４と一体となった形で研削装置１に備えられている場合にも、ヒドロキシラジカルによる強い酸化力によって金属を酸化させて脆弱化させながら研削を行うことができるため、ウエーハを円滑に研削することが可能となる。   The present invention is not limited to the above embodiment. For example, even when the wafer W is a wafer formed of metal and the light irradiation means 9 is provided in the grinding apparatus 1 in an integrated form with the grinding wheel 74, the metal is removed by strong oxidizing power due to hydroxy radicals. Since grinding can be performed while being fragile by oxidation, the wafer can be ground smoothly.

１：研削装置 １０：ベース １１：コラム
３０：チャックテーブル ３００：吸着部 ３００ａ：保持面 ３０１：枠体
３１：カバー
５：研削送り手段 ５０：ボールネジ ５１：ガイドレール ５２：モータ ５３：昇降板 ５４：ホルダ
７：研削手段 ７０：回転軸 ７０ａ：流路 ７２：モータ ７３：マウント ７３ａ：ネジ ７４：研削ホイール ７４ａ：研削砥石 ７４ｂ：ホイール基台 ７４ｃ：ネジ穴
８：研削水供給手段 ８０：研削水供給源 ８１：配管 ８２：流量調整バルブ
９：光照射手段 ９０：光照射口 ９１：電源
Ｐ１：ダイヤモンド砥粒 Ｐ２：酸化チタン粒 Ｂ１：レジンバインダー
Ｗ：ウエーハ Ｗａ：ウエーハ表面 Ｗｂ：ウエーハ裏面 Ｔ：保護テープ Ｓ：ストリート Ｄ：デバイス
Ａ：着脱領域 Ｂ：研削領域 1: Grinding device 10: Base 11: Column 30: Chuck table 300: Suction part 300a: Holding surface 301: Frame body 31: Cover 5: Grinding feeding means 50: Ball screw 51: Guide rail 52: Motor 53: Lift plate 54: Holder 7: Grinding means 70: Rotating shaft 70a: Flow path 72: Motor 73: Mount 73a: Screw 74: Grinding wheel 74a: Grinding wheel 74b: Wheel base 74c: Screw hole 8: Grinding water supply means 80: Grinding water supply Source 81: Piping 82: Flow rate adjusting valve 9: Light irradiation means 90: Light irradiation port 91: Power supply P1: Diamond abrasive grains P2: Titanium oxide grains B1: Resin binder W: Wafer Wa: Wafer surface Wb: Wafer back surface T: Protection Tape S: Street D: Device A: Removable area B: Grinding area

Claims (2)

ウエーハの加工方法であって、
ウエーハをチャックテーブルに保持するウエーハ保持工程と、
回転軸の先端に連結されたマウントに、砥粒と光触媒粒とを混在させバインダーで固定した研削砥石と該研削砥石を自由端部に環状に配設するホイール基台とから構成される研削ホイールを装着し、ウエーハの研削すべき領域に位置づけられた該研削砥石に研削水を供給してウエーハを研削する研削工程と、から少なくとも構成され、
該研削工程において、該研削ホイールの研削砥石に該研削砥石の内周側から光触媒粒を励起させる光を照射して、供給した研削水にヒドロキシラジカルによる酸化力を与えることを特徴とするウエーハの加工方法。 Wafer processing method,
A wafer holding step for holding the wafer on the chuck table;
A grinding wheel comprising a grinding wheel in which abrasive grains and photocatalyst grains are mixed and fixed with a binder on a mount connected to the tip of a rotating shaft, and a wheel base in which the grinding wheel is annularly arranged at a free end. the mounted, and the grinding step of grinding the wafer by supplying grinding water to the grinding wheel positioned in the area to be ground of the wafer, at least consists of,
In the grinding step, the grinding wheel of the grinding wheel is irradiated with light that excites photocatalyst particles from the inner peripheral side of the grinding wheel, and the supplied grinding water is given an oxidizing power by hydroxy radicals. Processing method. 研削装置であって、
ウエーハを保持するチャックテーブルと、
回転軸の先端に連結されたマウントに、砥粒と光触媒粒とを混在させバインダーで固定した研削砥石と該研削砥石を自由端部に環状に配設するホイール基台とから構成される研削ホイールを装着し該チャックテーブルに保持されたウエーハを研削する研削手段と、
ウエーハの研削すべき領域に位置づけられた該研削砥石に研削水を供給する研削水供給手段と、
該研削ホイールの研削砥石に光触媒粒を励起させる光を光照射口から照射して供給した研削水にヒドロキシラジカルによる酸化力を与える光照射手段と、
から少なくとも構成され、
該光照射手段は、該研削砥石の内周側に位置し、該光照射口が該研削砥石の内周側に対面する
研削装置。 A grinding device,
A chuck table for holding the wafer;
A grinding wheel comprising a grinding wheel in which abrasive grains and photocatalyst grains are mixed and fixed with a binder on a mount connected to the tip of a rotating shaft, and a wheel base in which the grinding wheel is annularly arranged at a free end. And grinding means for grinding the wafer held by the chuck table;
And the grinding water supply means for supplying grinding water to the grinding wheel positioned in the area to be ground of the wafer,
A light irradiating means for applying an oxidizing power by hydroxy radicals to the grinding water supplied by irradiating the grinding wheel of the grinding wheel with light that excites photocatalyst particles from a light irradiation port ;
At least it consists of,
The grinding apparatus, wherein the light irradiation means is located on an inner peripheral side of the grinding wheel, and the light irradiation port faces an inner peripheral side of the grinding wheel.
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Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWD179095S (en) * 2015-08-25 2016-10-21 荏原製作所股份有限公司 Substrate retaining ring
JP6803187B2 (en) * 2016-10-05 2020-12-23 株式会社ディスコ Grinding wheel dressing method
JP6912284B2 (en) * 2017-06-23 2021-08-04 株式会社ディスコ Grinding device
JP6974979B2 (en) * 2017-08-22 2021-12-01 株式会社ディスコ Grinding device
JP6951152B2 (en) * 2017-08-22 2021-10-20 株式会社ディスコ Grinding device
JP7127972B2 (en) * 2017-09-05 2022-08-30 株式会社ディスコ Processing method
JP7049848B2 (en) * 2018-02-08 2022-04-07 株式会社ディスコ How to grind the holding surface
CN109822454B (en) * 2019-03-27 2023-11-10 西南交通大学 Green energy-saving polishing head device of self-powered ultraviolet light source of modularized design
CN112792669A (en) * 2020-12-30 2021-05-14 浙江工业大学 Online dressing method for titanium oxide photocatalyst auxiliary metal bond superhard grinding wheel

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10217189A (en) * 1996-09-30 1998-08-18 Takashi Ono Slicing device and blade
US6435947B2 (en) * 1998-05-26 2002-08-20 Cabot Microelectronics Corporation CMP polishing pad including a solid catalyst
JP4028163B2 (en) * 1999-11-16 2007-12-26 株式会社デンソー Mechanochemical polishing method and mechanochemical polishing apparatus
JP4345746B2 (en) * 1999-11-16 2009-10-14 株式会社デンソー Mechanochemical polishing equipment
US6364744B1 (en) * 2000-02-02 2002-04-02 Agere Systems Guardian Corp. CMP system and slurry for polishing semiconductor wafers and related method
JP2001284303A (en) 2000-03-29 2001-10-12 Disco Abrasive Syst Ltd Polishing apparatus
JP2003113370A (en) * 2001-07-30 2003-04-18 Toshiba Corp Slurry for chemical and mechanical polishing (cmp), method of producing semiconductor device, apparatus for producing semiconductor device and method of handling cmp slurry
JP4823142B2 (en) * 2001-07-30 2011-11-24 株式会社東芝 Manufacturing method of semiconductor device
JP2003334762A (en) * 2002-05-17 2003-11-25 Isel Co Ltd Grinding wheel and grinding work method using the grinding wheel and grinding machine
JP3737787B2 (en) * 2002-07-16 2006-01-25 株式会社東芝 Manufacturing method of semiconductor device
JP4116352B2 (en) * 2002-07-18 2008-07-09 株式会社ノリタケカンパニーリミテド Polishing body and polishing method using the polishing body
TWI231523B (en) * 2003-06-18 2005-04-21 Hon Hai Prec Ind Co Ltd Method of cleaning surface of semiconductor wafer
JP4631021B2 (en) * 2004-03-12 2011-02-16 株式会社ディスコ Polishing equipment
TWI382893B (en) * 2005-07-07 2013-01-21 Univ Kumamoto Nat Univ Corp Substrate, grinding method of the same and grinding device
JP4791774B2 (en) * 2005-07-25 2011-10-12 株式会社ディスコ Wafer processing method and grinding apparatus
JP4752072B2 (en) * 2005-11-30 2011-08-17 国立大学法人埼玉大学 Polishing method and polishing apparatus
JP2007243112A (en) * 2006-03-13 2007-09-20 Disco Abrasive Syst Ltd Recess working method and irregularity absorption pad for wafer
CN101674919A (en) * 2007-03-07 2010-03-17 大西一正 Polishing tool and polishing device
JP2012089628A (en) * 2010-10-18 2012-05-10 Disco Abrasive Syst Ltd Grinding wheel
JP3174409U (en) * 2011-11-29 2012-03-22 株式会社フォーエバー Blade with diamond particles
CN103286694B (en) * 2012-03-03 2015-08-26 兰州理工大学 UV light-induced nano-particle colloid jet carries out the method for super smooth surface processing
JP6016301B2 (en) * 2013-02-13 2016-10-26 昭和電工株式会社 Surface processing method of single crystal SiC substrate, manufacturing method thereof, and grinding plate for surface processing of single crystal SiC substrate
JP5836992B2 (en) * 2013-03-19 2015-12-24 株式会社東芝 Manufacturing method of semiconductor device

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