JP6096670B2 - 酸化ケイ素誘電体膜およびポリシリコン膜を含有する基板を化学的機械的に研磨するための水性研磨組成物および方法 - Google Patents
酸化ケイ素誘電体膜およびポリシリコン膜を含有する基板を化学的機械的に研磨するための水性研磨組成物および方法 Download PDFInfo
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- JP6096670B2 JP6096670B2 JP2013542655A JP2013542655A JP6096670B2 JP 6096670 B2 JP6096670 B2 JP 6096670B2 JP 2013542655 A JP2013542655 A JP 2013542655A JP 2013542655 A JP2013542655 A JP 2013542655A JP 6096670 B2 JP6096670 B2 JP 6096670B2
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- 238000005530 etching Methods 0.000 description 1
- GXZJKZMEXXSLLD-UHFFFAOYSA-N ethene;2-(2-hydroxypropoxy)propan-1-ol Chemical compound C=C.CC(O)COC(C)CO GXZJKZMEXXSLLD-UHFFFAOYSA-N 0.000 description 1
- RESSOZOGQXKCKT-UHFFFAOYSA-N ethene;propane-1,2-diol Chemical compound C=C.CC(O)CO RESSOZOGQXKCKT-UHFFFAOYSA-N 0.000 description 1
- XOSVFWZSSCUXGG-UHFFFAOYSA-N ethene;propane-1,2-diol Chemical compound C=C.C=C.CC(O)CO XOSVFWZSSCUXGG-UHFFFAOYSA-N 0.000 description 1
- 125000000816 ethylene group Chemical group [H]C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
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- 229940050410 gluconate Drugs 0.000 description 1
- 239000008103 glucose Substances 0.000 description 1
- 150000002334 glycols Chemical class 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 229940005740 hexametaphosphate Drugs 0.000 description 1
- FBPFZTCFMRRESA-UHFFFAOYSA-N hexane-1,2,3,4,5,6-hexol Chemical compound OCC(O)C(O)C(O)C(O)CO FBPFZTCFMRRESA-UHFFFAOYSA-N 0.000 description 1
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- 230000006872 improvement Effects 0.000 description 1
- CDAISMWEOUEBRE-GPIVLXJGSA-N inositol Chemical compound O[C@H]1[C@H](O)[C@@H](O)[C@H](O)[C@H](O)[C@@H]1O CDAISMWEOUEBRE-GPIVLXJGSA-N 0.000 description 1
- 229960000367 inositol Drugs 0.000 description 1
- 229920000831 ionic polymer Polymers 0.000 description 1
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- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 239000000905 isomalt Substances 0.000 description 1
- 235000010439 isomalt Nutrition 0.000 description 1
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- 229960003451 lactitol Drugs 0.000 description 1
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- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
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- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- VQHSOMBJVWLPSR-WUJBLJFYSA-N maltitol Chemical compound OC[C@H](O)[C@@H](O)[C@@H]([C@H](O)CO)O[C@H]1O[C@H](CO)[C@@H](O)[C@H](O)[C@H]1O VQHSOMBJVWLPSR-WUJBLJFYSA-N 0.000 description 1
- 239000000845 maltitol Substances 0.000 description 1
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- 239000000594 mannitol Substances 0.000 description 1
- 235000010355 mannitol Nutrition 0.000 description 1
- 150000007974 melamines Chemical class 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
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- 229910021645 metal ion Inorganic materials 0.000 description 1
- 125000005341 metaphosphate group Chemical group 0.000 description 1
- FQPSGWSUVKBHSU-UHFFFAOYSA-N methacrylamide Chemical compound CC(=C)C(N)=O FQPSGWSUVKBHSU-UHFFFAOYSA-N 0.000 description 1
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- ZYWUVGFIXPNBDL-UHFFFAOYSA-N n,n-diisopropylaminoethanol Chemical compound CC(C)N(C(C)C)CCO ZYWUVGFIXPNBDL-UHFFFAOYSA-N 0.000 description 1
- YDLYQMBWCWFRAI-UHFFFAOYSA-N n-Hexatriacontane Natural products CCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCC YDLYQMBWCWFRAI-UHFFFAOYSA-N 0.000 description 1
- PZYDAVFRVJXFHS-UHFFFAOYSA-N n-cyclohexyl-2-pyrrolidone Chemical compound O=C1CCCN1C1CCCCC1 PZYDAVFRVJXFHS-UHFFFAOYSA-N 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000002560 nitrile group Chemical group 0.000 description 1
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229920001542 oligosaccharide Polymers 0.000 description 1
- 150000002482 oligosaccharides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- LCLHHZYHLXDRQG-ZNKJPWOQSA-N pectic acid Chemical compound O[C@@H]1[C@@H](O)[C@@H](O)O[C@H](C(O)=O)[C@@H]1OC1[C@H](O)[C@@H](O)[C@@H](OC2[C@@H]([C@@H](O)[C@@H](O)[C@H](O2)C(O)=O)O)[C@@H](C(O)=O)O1 LCLHHZYHLXDRQG-ZNKJPWOQSA-N 0.000 description 1
- WCVRQHFDJLLWFE-UHFFFAOYSA-N pentane-1,2-diol Chemical compound CCCC(O)CO WCVRQHFDJLLWFE-UHFFFAOYSA-N 0.000 description 1
- WVDDGKGOMKODPV-ZQBYOMGUSA-N phenyl(114C)methanol Chemical compound O[14CH2]C1=CC=CC=C1 WVDDGKGOMKODPV-ZQBYOMGUSA-N 0.000 description 1
- 125000002467 phosphate group Chemical group [H]OP(=O)(O[H])O[*] 0.000 description 1
- UEZVMMHDMIWARA-UHFFFAOYSA-M phosphonate Chemical compound [O-]P(=O)=O UEZVMMHDMIWARA-UHFFFAOYSA-M 0.000 description 1
- 229940116254 phosphonic acid Drugs 0.000 description 1
- 125000001918 phosphonic acid ester group Chemical group 0.000 description 1
- 150000003009 phosphonic acids Chemical class 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- XNGIFLGASWRNHJ-UHFFFAOYSA-L phthalate(2-) Chemical compound [O-]C(=O)C1=CC=CC=C1C([O-])=O XNGIFLGASWRNHJ-UHFFFAOYSA-L 0.000 description 1
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 1
- 229920002401 polyacrylamide Polymers 0.000 description 1
- 108010064470 polyaspartate Proteins 0.000 description 1
- 238000006068 polycondensation reaction Methods 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 239000010318 polygalacturonic acid Substances 0.000 description 1
- 229920002643 polyglutamic acid Polymers 0.000 description 1
- 229920000151 polyglycol Polymers 0.000 description 1
- 239000010695 polyglycol Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000656 polylysine Polymers 0.000 description 1
- 229920001444 polymaleic acid Polymers 0.000 description 1
- 229920005862 polyol Polymers 0.000 description 1
- 150000003077 polyols Chemical class 0.000 description 1
- 229920000259 polyoxyethylene lauryl ether Polymers 0.000 description 1
- 239000000256 polyoxyethylene sorbitan monolaurate Substances 0.000 description 1
- 235000010486 polyoxyethylene sorbitan monolaurate Nutrition 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229940005642 polystyrene sulfonic acid Drugs 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 159000000001 potassium salts Chemical class 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- WGYKZJWCGVVSQN-UHFFFAOYSA-N propylamine Chemical group CCCN WGYKZJWCGVVSQN-UHFFFAOYSA-N 0.000 description 1
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- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- 102000004169 proteins and genes Human genes 0.000 description 1
- 235000019423 pullulan Nutrition 0.000 description 1
- 229940079877 pyrogallol Drugs 0.000 description 1
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 1
- 150000004040 pyrrolidinones Chemical class 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 150000003856 quaternary ammonium compounds Chemical class 0.000 description 1
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 1
- 238000012712 reversible addition−fragmentation chain-transfer polymerization Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 238000000518 rheometry Methods 0.000 description 1
- HEBKCHPVOIAQTA-ZXFHETKHSA-N ribitol Chemical compound OC[C@H](O)[C@H](O)[C@H](O)CO HEBKCHPVOIAQTA-ZXFHETKHSA-N 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 235000019333 sodium laurylsulphate Nutrition 0.000 description 1
- 239000001488 sodium phosphate Substances 0.000 description 1
- 229910000162 sodium phosphate Inorganic materials 0.000 description 1
- 235000019830 sodium polyphosphate Nutrition 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-L succinate(2-) Chemical compound [O-]C(=O)CCC([O-])=O KDYFGRWQOYBRFD-UHFFFAOYSA-L 0.000 description 1
- 125000000020 sulfo group Chemical group O=S(=O)([*])O[H] 0.000 description 1
- 125000004434 sulfur atom Chemical group 0.000 description 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
- 229910021653 sulphate ion Inorganic materials 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 239000011885 synergistic combination Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- LRBQNJMCXXYXIU-NRMVVENXSA-N tannic acid Chemical compound OC1=C(O)C(O)=CC(C(=O)OC=2C(=C(O)C=C(C=2)C(=O)OC[C@@H]2[C@H]([C@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)O2)OC(=O)C=2C=C(OC(=O)C=3C=C(O)C(O)=C(O)C=3)C(O)=C(O)C=2)O)=C1 LRBQNJMCXXYXIU-NRMVVENXSA-N 0.000 description 1
- 235000015523 tannic acid Nutrition 0.000 description 1
- 229920002258 tannic acid Polymers 0.000 description 1
- 229940033123 tannic acid Drugs 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229940095064 tartrate Drugs 0.000 description 1
- 239000001577 tetrasodium phosphonato phosphate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- OLTHARGIAFTREU-UHFFFAOYSA-N triacontane Natural products CCCCCCCCCCCCCCCCCCCCC(C)CCCCCCCC OLTHARGIAFTREU-UHFFFAOYSA-N 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 1
- RYFMWSXOAZQYPI-UHFFFAOYSA-K trisodium phosphate Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])([O-])=O RYFMWSXOAZQYPI-UHFFFAOYSA-K 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N urethane group Chemical group NC(=O)OCC JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 239000000811 xylitol Substances 0.000 description 1
- 235000010447 xylitol Nutrition 0.000 description 1
- HEBKCHPVOIAQTA-SCDXWVJYSA-N xylitol Chemical compound OC[C@H](O)[C@@H](O)[C@H](O)CO HEBKCHPVOIAQTA-SCDXWVJYSA-N 0.000 description 1
- 229960002675 xylitol Drugs 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Weting (AREA)
Description
引用文献
本出願において引用した文献は、全体として参照により組み込まれる。
−アルミナ、シリカ、チタニア、セリア、ジルコニア、ゲルマニア、マグネシア、およびそれらから共調製された生成物から成る群から選択される研磨粒子、および
−少なくとも1つの親油性頭部基および少なくとも1つの親水性尾部基を有する両親媒性非イオン性界面活性剤を含有するCMPスラリーについて開示している。
Z−[{(AO)n/(EO)m}R1]p、
(式中、変数における指数は、以下の意味を有する:
pは、1〜6の整数である、
nは、平均値が10〜200の整数である、
mは、平均値が1〜300の整数である、
Eは、エチレン基である、
Aは、プロピレンまたは1,2−、2,3−、1,3−もしくは1,4−ブチレン基である、
Zは、多価アルコールの残基である;および
R1は、水素原子、1〜18個の炭素原子を有するアルキル基または2〜24個の炭素原子を有するアシル基である)のコポリマーである。
(A)セリアを含有する、またはそれから成る、少なくとも1つのタイプの研磨粒子、および
(B)一般式I:
R[(B1)m/(B2)nY]p(I)、
(式中、指数および変数は、以下の意味を有する:
mは、≧1の整数である、
nは、≧1の整数である、
pは、≧1の整数である、
Rは、水素原子、または5〜20個の炭素原子を有する直鎖および分枝鎖アルキル基を除く一価もしくは多価有機残基である、
(B1)は、実質的にオキシエチレンモノマー単位から成るブロックである、
(B2)は、実質的に少なくとも1つのタイプの置換オキシアルキレンモノマー単位から成るブロックであって、該置換基は、少なくとも2つのメチル基、少なくとも2個の炭素原子を有するアルキル基ならびにシクロアルキル、アリール、アルキル−シクロアルキル、アルキル−アリール、シクロアルキル−アリールおよびアルキル−シクロアルキル−アリール基から成る群から選択されるブロックである、
Yは、水素原子、または5〜20個の炭素原子を有する直鎖および分枝鎖アルキル基を除く一価有機残基である、
ただし、(B)が1つより多いブロック(B1)または(B2)を含有する場合、同一タイプの2つのブロックは相互から他のタイプのブロックによって分離されていることを前提とする)の水溶性および水分散性の直鎖および分枝鎖ポリオキシアルキレンブロックコポリマーから成る群から選択される少なくとも1つの両親媒性非イオン性界面活性剤を含む水性研磨組成物が見いだされている。
(本発明の利点)
先行技術を考慮すると、本発明の課題を本発明の組成物および本発明の方法によって解決できることは驚くべきことであり、当業者には予測できなかった。
R[(B1)m/(B2)nY]p
の水溶性および水分散性、好ましくは水溶性の、直鎖および分枝鎖、好ましくは直鎖のポリオキシアルキレンブロックコポリマーから成る群から選択される少なくとも1つの、好ましくは1つの両親媒性非イオン性界面活性剤(B)である。
−B1−B2、
−B1−B2−B1、
−B2−B1−B2、
−B1−B2−B1−B2、
−B1−B2−B1−B2−B1、
−B2−B1−B2−B1−B2、
−B1−B2−B1−B2−B1−B2、
−B1−B2−B1−B2−B1−B2−B1、および
−B2−B1−B2−B1−B2−B1−B2を含有することができる。
LCSTもしくはUCSTを示す適切な材料(D)は、例えばChemical Communication,2005,4872−4874におけるH.Mori,H.Iwaya,A.Nagai and T.Endoの論文、Controlled synthesis of thermoresponsive polymers derived from L−proline via RAFT polymerization;もしくはD.Schmaljohannの論文、Thermo−and pH−responsive polymers and drug delivery,Advanced Drug Delivery Reviews,volume 58(2006),1655−1670、または米国特許出願公開第2002/0198328号明細書、同第2004/0209095号明細書、同第2004/0217009号明細書、同第2006/0141254号明細書、同第2007/0029198号明細書、同第2007/0289875号明細書、同第2008/0249210号明細書、同第2008/0050435号明細書もしくは同第2009/0013609号明細書、米国特許第5057560号明細書、同第578882号明細書および同第6682642号明細書、国際特許出願公開第01/60926号パンフレット、同第2004/029160号パンフレット、同第2004/0521946号パンフレット、同第2006/093242号パンフレットまたは同第2007/012763号パンフレット、欧州特許出願公開第0583814号明細書、同第1197587号明細書および同第1942179号明細書もしくは独国特許出願第2610705号明細書に記載されている。
[Mn(PO3)n] (I);
のメタリン酸塩のアンモニウム、ナトリウムおよびカリウム塩、ならびに一般式IIおよびIII:
Mn+2PnO3n+1 (II);
MnH2PnO3n+1 (III);
(式中、Mは、アンモニウム、ナトリウムもしくはカリウムカチオンであり、指数nは2〜10,000である)のポリリン酸塩である。
水性研磨組成物1〜10を調製するために、セリア(動的レーザー光散乱法によって決定した平均粒径d50:120〜180nm)およびヘキサメタリン酸ナトリウム(PP;セリア対PPの重量比=200:1、以下ではPP200と指定する)を超純水中に分散または溶解させた。
b)ポリエチレンオキシド−ポリ−2,3−ブチレンオキシドブロックコポリマー;
c)方法B:100gの5重量%塩化ナトリウム水溶液中の1gの界面活性剤;
方法E:25gの25重量%ブチルジグリコール水溶液中の5gの界面活性剤;
d)表面張力:25℃で45.3ダイン/cm
シリコン半導体ウェーハ上の二酸化ケイ素、窒化ケイ素膜およびポリシリコン膜のCMP
実施例2〜9のためには実施例1の水性研磨組成物1〜9を使用した。
−プラテンの速度:93rpm;
−キャリアの速度:87rpm;
−研磨パッド:IC1010−k溝付きパッド;
−パッドのコンディショニング:現場で;
−コンディショナー:3M A166;
−コンディショニングダウンフォース:5lbf(22.24N);
−スラリー流量:160mL/分;
−研磨ダウンフォース:3.5psi(205mbar);
−研磨時間:60秒間
MRRは、半導体基板上のHDP二酸化ケイ素、窒化ケイ素膜およびポリシリコン膜のCMP前後の厚さをThermawave Optiprobe 2600を使用して測定することによって決定した。
Claims (10)
- 水性研磨組成物であって、
(A)セリアを含有する、またはそれから成る少なくとも1つのタイプの研磨粒子、
(B)一般式I:
R[(B1)m/(B2)nY]p(I)、
(式中、指数および変数は、以下の意味を有する:
mは、≧1の整数である、
nは、≧1の整数である、
pは、≧1の整数である、
Rは、水素原子である、
(B1)は、実質的にオキシエチレンモノマー単位から成るブロックである、
(B2)は、2−エチル、2,3−ジメチルおよび2,2−ジメチルオキシランから成る群から選択される実質的に少なくとも1つのタイプの置換オキシアルキレンモノマー単位から成るブロックである、および
Yは、水素原子である、
ただし、(B)が1つより多いブロック(B1)または(B2)を含有する場合、同一タイプの2つのブロックは相互から他のタイプのブロックによって分離されていることを前提とする)の水溶性および水分散性であって直鎖および分枝鎖ポリオキシアルキレンブロックコポリマーから成る群から選択される少なくとも1つの両親媒性非イオン性界面活性剤、および
(D)官能性構成成分として、水溶性縮合リン酸塩である電荷反転剤
を含む水性研磨組成物。 - 前記両親媒性非イオン性界面活性剤(B)のHLB(親水性−親油性平衡)値が3〜20であることを特徴とする、請求項1に記載の水性研磨組成物。
- 相互から独立して、前記ブロック(B1)および(B2)の平均重合度は5〜100であることを特徴とする、請求項1または2に記載の水性研磨組成物。
- 前記両親媒性非イオン性界面活性剤(B)の重量平均分子量は1,000〜10,000ダルトンであることを特徴とする、請求項1〜3のいずれか一項に記載の水性研磨組成物。
- 前記両親媒性非イオン性界面活性剤(B)の濃度は0.001〜5重量%であることを特徴とし、このとき該重量%は前記組成物の完全重量に基づく、請求項1〜4のいずれか一項に記載の水性研磨組成物。
- 前記水性研磨組成物が該研磨組成物の完全重量に基づいて0.005〜10重量%の研磨粒子(A)を含有することを特徴とする、請求項1〜5のいずれか一項に記載の水性研磨組成物。
- 電気、機械および光学装置のための基板を研磨するための、前記基板を少なくとも1回水性研磨組成物と接触させる工程および前記基板材料を所望の平坦性が達成されるまで研磨する工程による方法であって、請求項1〜6のいずれか一項に記載の前記水性研磨組成物が使用されることを特徴とする方法。
- 前記基板は、少なくとも1つの酸化ケイ素誘電体材料を含有する、もしくはそれから成る少なくとも1つの膜およびポリシリコンを含有する、もしくはそれから成る少なくとも1つの膜を含むことを特徴とする、請求項7に記載の方法。
- 前記基板材料は、窒化ケイ素を含有する、もしくはそれから成る少なくとも1つの膜を追加して含むことを特徴とする、請求項7に記載の方法。
- 前記電気装置は、集積回路装置、液晶パネル、有機エレクトロルミネッセンスパネル、プリント回路基板、微小機械、DNAチップ、マイクロプラントおよび磁気ヘッドである;前記機械装置は精密機械装置である;および前記光学装置は、フォトマスク、レンズおよびプリズム等の光学ガラス、ITO(インジウムスズ酸化物)等の無機導電性膜、光学集積回路、光学スイッチング素子、光導波路、光ファイバーおよびシンチレータの端面等の光学単結晶、固体レーザー単結晶、青色レーザーLEDのためのサファイア基板、半導体単結晶、ならびに磁気ディスク用のガラス基板であることを特徴とする、請求項7〜9のいずれか一項に記載の方法。
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2011
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- 2011-12-07 CN CN201810174369.2A patent/CN108276915A/zh active Pending
- 2011-12-07 KR KR1020137017968A patent/KR101919750B1/ko active IP Right Grant
- 2011-12-07 RU RU2013131395/05A patent/RU2588620C2/ru not_active IP Right Cessation
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US20130248756A1 (en) | 2013-09-26 |
EP2649144A1 (en) | 2013-10-16 |
CN108276915A (zh) | 2018-07-13 |
RU2013131395A (ru) | 2015-01-20 |
SG10201510122PA (en) | 2016-01-28 |
EP2649144A4 (en) | 2014-05-14 |
MY165631A (en) | 2018-04-18 |
KR101919750B1 (ko) | 2018-11-19 |
KR20130127486A (ko) | 2013-11-22 |
RU2588620C2 (ru) | 2016-07-10 |
US9524874B2 (en) | 2016-12-20 |
CN103249790A (zh) | 2013-08-14 |
SG190334A1 (en) | 2013-06-28 |
WO2012077063A1 (en) | 2012-06-14 |
JP2014505124A (ja) | 2014-02-27 |
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