JP6020750B1 - 透明導電配線、及び、透明導電配線の製造方法 - Google Patents

透明導電配線、及び、透明導電配線の製造方法 Download PDF

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Publication number: JP6020750B1
Authority: JP; Japan
Prior art keywords: film; transparent conductive; conductive oxide; oxide film; etching
Prior art date: 2015-02-27
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

JP2016034768A

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English (en)

Japanese (ja)

Other versions

JP2017091491A (ja

Inventor

一郎塩野

悠人歳森

野中　荘平

荘平野中

齋藤　淳

淳齋藤

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Mitsubishi Materials Corp

Original Assignee

Mitsubishi Materials Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2015-02-27

Filing date

2016-02-25

Publication date

2016-11-02

2016-02-25 Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp

2016-02-26 Priority to KR1020177004671A priority Critical patent/KR101777549B1/ko

2016-02-26 Priority to PCT/JP2016/055855 priority patent/WO2016136953A1/ja

2016-02-26 Priority to TW105106099A priority patent/TWI591696B/zh

2016-02-26 Priority to CN201680002259.7A priority patent/CN106796885B/zh

2016-11-02 Application granted granted Critical

2016-11-02 Publication of JP6020750B1 publication Critical patent/JP6020750B1/ja

2017-05-25 Publication of JP2017091491A publication Critical patent/JP2017091491A/ja

Status Expired - Fee Related legal-status Critical Current

2036-02-25 Anticipated expiration legal-status Critical

Links

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229910052718 tin Inorganic materials 0.000 claims description 25
239000000243 solution Substances 0.000 claims description 24
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239000011261 inert gas Substances 0.000 description 2
238000001755 magnetron sputter deposition Methods 0.000 description 2
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
229910018137 Al-Zn Inorganic materials 0.000 description 1
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MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
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Images

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics

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Engineering & Computer Science (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Non-Insulated Conductors (AREA)
Electrodes Of Semiconductors (AREA)
Physical Vapour Deposition (AREA)
Manufacturing Of Electric Cables (AREA)

JP2016034768A 2015-02-27 2016-02-25 透明導電配線、及び、透明導電配線の製造方法 Expired - Fee Related JP6020750B1 (ja)

Priority Applications (4)

Application Number	Priority Date	Filing Date	Title
KR1020177004671A KR101777549B1 (ko)	2015-02-27	2016-02-26	투명 도전 배선 및 투명 도전 배선의 제조 방법
PCT/JP2016/055855 WO2016136953A1 (ja)	2015-02-27	2016-02-26	透明導電配線、及び、透明導電配線の製造方法
TW105106099A TWI591696B (zh)	2015-02-27	2016-02-26	透明導電電路及透明導電電路之製造方法
CN201680002259.7A CN106796885B (zh)	2015-02-27	2016-02-26	透明导电配线及透明导电配线的制造方法

Applications Claiming Priority (4)

Application Number	Priority Date	Filing Date	Title
JP2015037950		2015-02-27
JP2015037950		2015-02-27
JP2015217683		2015-11-05
JP2015217683		2015-11-05

Publications (2)

Publication Number	Publication Date
JP6020750B1 true JP6020750B1 (ja)	2016-11-02
JP2017091491A JP2017091491A (ja)	2017-05-25

Family

ID=57216895

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP2016034768A Expired - Fee Related JP6020750B1 (ja)	2015-02-27	2016-02-25	透明導電配線、及び、透明導電配線の製造方法

Country Status (4)

Country	Link
JP (1)	JP6020750B1 (zh)
KR (1)	KR101777549B1 (zh)
CN (1)	CN106796885B (zh)
TW (1)	TWI591696B (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
WO2018134957A1 (ja) *	2017-01-20	2018-07-26	凸版印刷株式会社	表示装置及び表示装置基板
WO2020116558A1 (ja)	2018-12-05	2020-06-11	三菱マテリアル株式会社	金属膜、及び、スパッタリングターゲット
KR102134287B1 (ko) *	2020-01-30	2020-07-15	주식회사 비와이인더스트리	벨트 컨베이어의 언로딩 스크래퍼장치

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN108520856A (zh) *	2018-05-18	2018-09-11	中国科学院微电子研究所	一种ito薄膜的图案化方法
KR102659176B1 (ko)	2020-12-28	2024-04-23	삼성디스플레이 주식회사	은 함유 박막의 식각 조성물, 이를 이용한 패턴 형성 방법 및 표시장치의 제조 방법

Citations (5)

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JPH07114841A (ja) *	1993-10-18	1995-05-02	Toshiba Corp	透明導電膜、その形成方法および透明導電膜の加工方法
JPH09123337A (ja) *	1995-03-22	1997-05-13	Toppan Printing Co Ltd	多層導電膜、並びにこれを用いた透明電極板および液晶表示装置
JPH11302876A (ja) *	1998-04-16	1999-11-02	Nippon Sheet Glass Co Ltd	透明導電膜の電極パターン加工方法
JP2005250191A (ja) *	2004-03-05	2005-09-15	Idemitsu Kosan Co Ltd	半透過・半反射電極基板、及びその製造方法、及びその半透過・半反射電極基板を用いた液晶表示装置
JP2015030896A (ja) *	2013-08-05	2015-02-16	出光興産株式会社	スパッタリングターゲット及び酸化物透明導電膜

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JP2006216266A (ja)	2005-02-01	2006-08-17	Kitagawa Ind Co Ltd	透明導電フィルム
JP4773145B2 (ja)	2005-06-30	2011-09-14	アルバック成膜株式会社	増反射膜付きＡｇ又はＡｇ合金反射電極膜及びその製造方法
JP2008080743A (ja)	2006-09-28	2008-04-10	Optrex Corp	タッチパネル装置
JP4957584B2 (ja)	2008-02-29	2012-06-20	東ソー株式会社	エッチング用組成物及びエッチング方法
JP2012054006A (ja)	2010-08-31	2012-03-15	Gunze Ltd	透明導電性ガスバリヤフィルム及びその製造方法
JP5488849B2 (ja) *	2011-06-24	2014-05-14	三菱マテリアル株式会社	導電性膜およびその製造方法並びにこれに用いるスパッタリングターゲット

2016
- 2016-02-25 JP JP2016034768A patent/JP6020750B1/ja not_active Expired - Fee Related
- 2016-02-26 KR KR1020177004671A patent/KR101777549B1/ko active IP Right Grant
- 2016-02-26 TW TW105106099A patent/TWI591696B/zh active
- 2016-02-26 CN CN201680002259.7A patent/CN106796885B/zh active Active

Patent Citations (5)

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Publication number	Priority date	Publication date	Assignee	Title
JPH07114841A (ja) *	1993-10-18	1995-05-02	Toshiba Corp	透明導電膜、その形成方法および透明導電膜の加工方法
JPH09123337A (ja) *	1995-03-22	1997-05-13	Toppan Printing Co Ltd	多層導電膜、並びにこれを用いた透明電極板および液晶表示装置
JPH11302876A (ja) *	1998-04-16	1999-11-02	Nippon Sheet Glass Co Ltd	透明導電膜の電極パターン加工方法
JP2005250191A (ja) *	2004-03-05	2005-09-15	Idemitsu Kosan Co Ltd	半透過・半反射電極基板、及びその製造方法、及びその半透過・半反射電極基板を用いた液晶表示装置
JP2015030896A (ja) *	2013-08-05	2015-02-16	出光興産株式会社	スパッタリングターゲット及び酸化物透明導電膜

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
WO2018134957A1 (ja) *	2017-01-20	2018-07-26	凸版印刷株式会社	表示装置及び表示装置基板
WO2020116558A1 (ja)	2018-12-05	2020-06-11	三菱マテリアル株式会社	金属膜、及び、スパッタリングターゲット
KR102134287B1 (ko) *	2020-01-30	2020-07-15	주식회사 비와이인더스트리	벨트 컨베이어의 언로딩 스크래퍼장치

Also Published As

Publication number	Publication date
KR20170030642A (ko)	2017-03-17
TWI591696B (zh)	2017-07-11
CN106796885B (zh)	2018-04-20
CN106796885A (zh)	2017-05-31
KR101777549B1 (ko)	2017-09-11
TW201703150A (zh)	2017-01-16
JP2017091491A (ja)	2017-05-25

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JP6020750B1 - 透明導電配線、及び、透明導電配線の製造方法 - Google Patents

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Priority Applications (4)

Applications Claiming Priority (4)

Publications (2)

Family

ID=57216895

Family Applications (1)

Country Status (4)

Cited By (3)

Families Citing this family (2)

Citations (5)

Family Cites Families (7)

Patent Citations (5)

Cited By (3)

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