JP5775409B2 - 光スキャナの製造方法 - Google Patents
光スキャナの製造方法 Download PDFInfo
- Publication number
- JP5775409B2 JP5775409B2 JP2011215622A JP2011215622A JP5775409B2 JP 5775409 B2 JP5775409 B2 JP 5775409B2 JP 2011215622 A JP2011215622 A JP 2011215622A JP 2011215622 A JP2011215622 A JP 2011215622A JP 5775409 B2 JP5775409 B2 JP 5775409B2
- Authority
- JP
- Japan
- Prior art keywords
- optical scanner
- support substrate
- wafer
- processed wafer
- bonding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00865—Multistep processes for the separation of wafers into individual elements
- B81C1/00873—Multistep processes for the separation of wafers into individual elements characterised by special arrangements of the devices, allowing an easier separation
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/10—Scanning systems
- G02B26/101—Scanning systems with both horizontal and vertical deflecting means, e.g. raster or XY scanners
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/04—Optical MEMS
- B81B2201/042—Micromirrors, not used as optical switches
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
- G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
- G02B26/0858—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD the reflecting means being moved or deformed by piezoelectric means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
- H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Micromachines (AREA)
- Mechanical Light Control Or Optical Switches (AREA)
- Mechanical Optical Scanning Systems (AREA)
- Facsimile Heads (AREA)
Description
前記光スキャナを形成する加工ウエハの一方の表面を所定の光スキャナ素子パターンに従って加工する際に、光スキャナ素子をチップとして個片化するためのダイシングストリートを形成する工程と、
前記加工ウエハが前記光スキャナ素子のミラーを中心とする可動部に対応したキャビティを有する支持基板を、前記可動部が前記キャビティの内側に位置して当該支持基板に接触しないように前記加工ウエハの一方の表面に仮接合する工程と、
前記加工ウエハのもう一方の表面を所定の光スキャナ素子パターンに従って加工する際に、前記光スキャナ素子をチップとして個片化するためのダイシングストリートを形成する工程と、
前記加工ウエハが前記支持基板に仮接合された状態で、前記加工ウエハの仮接合面と反対側の面を粘着フィルムに貼り付け、仮接合に用いた部材の接合力を消失させて前記加工ウエハから前記支持基板を剥離する工程と、
前記粘着フィルムをエキスパンドさせた後、各光スキャナ素子をピックアップしてパッケージングする工程とを備えることを特徴とする。
以下、図2に示すMEMS光スキャナ素子1を、図3及び図4に示す工程で作製する実施例について説明する。
・ ゲーム等の映像娯楽システム用レーザプロジェクタ
・ 車載用ヘッドアップディスプレイ
・ 車載インパネ用リアプロジェクションディスプレイ
・ 車載Aピラー用プロジェクションディスプレイ
Claims (4)
- 反射面を有するミラー部と、給電により該ミラー部を駆動するアクチュエータと、前記アクチュエータに給電するための複数の電極とを備えた光スキャナの製造方法であって、
前記光スキャナを形成する加工ウエハの一方の表面を所定の光スキャナ素子パターンに従って加工する際に、光スキャナ素子をチップとして個片化するためのダイシングストリートを形成する工程と、
前記加工ウエハが前記光スキャナ素子のミラーを中心とする可動部に対応したキャビティを有する支持基板を、前記可動部が前記キャビティの内側に位置して当該支持基板に接触しないように前記加工ウエハの一方の表面に仮接合する工程と、
前記加工ウエハのもう一方の表面を所定の光スキャナ素子パターンに従って加工する際に、前記光スキャナ素子をチップとして個片化するためのダイシングストリートを形成する工程と、
前記加工ウエハが前記支持基板に仮接合された状態で、前記加工ウエハの仮接合面と反対側の面を粘着フィルムに貼り付け、仮接合に用いた部材の接合力を消失させて前記加工ウエハから前記支持基板を剥離する工程と、
前記粘着フィルムをエキスパンドさせた後、各光スキャナ素子をピックアップしてパッケージングする工程と
を備えることを特徴とする光スキャナの製造方法。 - 前記光スキャナ素子をピックアップして、ダイボンド工程の前にテスティングを実施し、良品素子と不良素子とを選別し、良品素子のみを光スキャナパッケージとして仕上げることを特徴とする請求項1に記載の製造方法。
- 前記支持基板と前記加工ウエハとの仮接合に用いる接合部材は、紫外線の照射又は加熱によって硬化し、温水又は溶剤に浸すことによって剥離する材料からなることを特徴とする請求項1又は2に記載の製造方法。
- 前記支持基板は洗浄処理によって繰り返し使用可能なガラス又は石英からなることを特徴とする請求項1から3のいずれか1項に記載の製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011215622A JP5775409B2 (ja) | 2011-09-29 | 2011-09-29 | 光スキャナの製造方法 |
US13/613,847 US8790936B2 (en) | 2011-09-29 | 2012-09-13 | Method for manufacturing optical deflector for forming dicing street with double etching |
EP12006663.4A EP2574974B1 (en) | 2011-09-29 | 2012-09-21 | Method of manufacturing optical deflector by forming dicing street with double etching |
CN201210376372.5A CN103033927B (zh) | 2011-09-29 | 2012-09-29 | 利用双蚀刻形成切割道的光学偏转器制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011215622A JP5775409B2 (ja) | 2011-09-29 | 2011-09-29 | 光スキャナの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013076781A JP2013076781A (ja) | 2013-04-25 |
JP5775409B2 true JP5775409B2 (ja) | 2015-09-09 |
Family
ID=47216003
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011215622A Active JP5775409B2 (ja) | 2011-09-29 | 2011-09-29 | 光スキャナの製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8790936B2 (ja) |
EP (1) | EP2574974B1 (ja) |
JP (1) | JP5775409B2 (ja) |
CN (1) | CN103033927B (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6261923B2 (ja) * | 2013-09-17 | 2018-01-17 | スタンレー電気株式会社 | 光偏向ミラー及びこれを用いた光偏向器 |
JP6220648B2 (ja) * | 2013-11-21 | 2017-10-25 | スタンレー電気株式会社 | 光偏向器及びその製造方法 |
US9346671B2 (en) * | 2014-02-04 | 2016-05-24 | Freescale Semiconductor, Inc. | Shielding MEMS structures during wafer dicing |
JP6284427B2 (ja) | 2014-05-21 | 2018-02-28 | スタンレー電気株式会社 | 光偏向器及びその製造方法 |
JP6308895B2 (ja) * | 2014-07-08 | 2018-04-11 | 株式会社ディスコ | ウェーハの加工方法 |
CN106293312B (zh) * | 2015-05-27 | 2021-05-14 | 深圳市腾讯计算机***有限公司 | 终端可移动控件显示的方法和装置 |
JP6573231B2 (ja) * | 2016-03-03 | 2019-09-11 | パナソニックIpマネジメント株式会社 | プラズマ処理方法 |
US11402579B2 (en) * | 2017-12-27 | 2022-08-02 | Medlumics S.L. | Techniques for fabricating waveguide facets and die separation |
DE102018215528A1 (de) * | 2018-09-12 | 2020-03-12 | Robert Bosch Gmbh | Mikromechanisches Bauteil und Herstellungsverfahren für ein mikromechanisches Bauteil |
JP7386625B2 (ja) * | 2019-06-17 | 2023-11-27 | スタンレー電気株式会社 | 光偏向器の製造方法及び光偏向器 |
CN114388721B (zh) * | 2021-12-31 | 2023-12-12 | 昆山梦显电子科技有限公司 | 一种硅基oled显示基板 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6617098B1 (en) * | 1999-07-13 | 2003-09-09 | Input/Output, Inc. | Merged-mask micro-machining process |
KR100434541B1 (ko) * | 2001-08-24 | 2004-06-05 | 삼성전자주식회사 | 광스캐너 및 그 제조방법 |
EP1483196B1 (en) | 2002-02-14 | 2016-02-03 | Silex Microsystems AB | Method of manufacturing deflectable microstructure through bonding of wafers |
US7052117B2 (en) * | 2002-07-03 | 2006-05-30 | Dimatix, Inc. | Printhead having a thin pre-fired piezoelectric layer |
JP3983176B2 (ja) * | 2003-01-20 | 2007-09-26 | 日本電信電話株式会社 | ミラー基板の製造方法及び光スイッチ装置の製造方法 |
JP2005019966A (ja) | 2003-06-06 | 2005-01-20 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
JP2007515790A (ja) * | 2003-12-16 | 2007-06-14 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | MOSFET構造体内に歪みSiチャネルを形成する方法 |
US7306983B2 (en) * | 2004-12-10 | 2007-12-11 | International Business Machines Corporation | Method for forming dual etch stop liner and protective layer in a semiconductor device |
JP4984117B2 (ja) | 2006-07-13 | 2012-07-25 | スタンレー電気株式会社 | 2次元光スキャナ、それを用いた光学装置および2次元光スキャナの製造方法 |
US7848002B2 (en) | 2006-12-26 | 2010-12-07 | Silicon Quest Kabushiki-Kaisha | Method for aligning die to substrate |
US8553306B2 (en) * | 2007-03-15 | 2013-10-08 | Ricoh Company, Ltd. | Optical deflector and optical device |
JP2009054803A (ja) | 2007-08-27 | 2009-03-12 | Seiko Epson Corp | エキスパンド治具、エキスパンド方法及び単位素子の製造方法 |
JP5414187B2 (ja) | 2008-03-18 | 2014-02-12 | スタンレー電気株式会社 | 光偏向器 |
JP5262613B2 (ja) | 2008-11-20 | 2013-08-14 | パナソニック株式会社 | 光学反射素子 |
US20110226299A1 (en) | 2009-01-02 | 2011-09-22 | Tarek Makansi | Device for energy conversion, electrical switching, and thermal switching |
JP5191939B2 (ja) * | 2009-03-31 | 2013-05-08 | スタンレー電気株式会社 | 光偏向器用アクチュエータ装置 |
DE102009026682A1 (de) * | 2009-06-03 | 2010-12-09 | Robert Bosch Gmbh | Bauelement mit einer mikromechanischen Mikrofonstruktur und Verfahren zu dessen Herstellung |
-
2011
- 2011-09-29 JP JP2011215622A patent/JP5775409B2/ja active Active
-
2012
- 2012-09-13 US US13/613,847 patent/US8790936B2/en active Active
- 2012-09-21 EP EP12006663.4A patent/EP2574974B1/en active Active
- 2012-09-29 CN CN201210376372.5A patent/CN103033927B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
EP2574974A1 (en) | 2013-04-03 |
EP2574974B1 (en) | 2017-04-12 |
CN103033927A (zh) | 2013-04-10 |
CN103033927B (zh) | 2016-04-06 |
JP2013076781A (ja) | 2013-04-25 |
US8790936B2 (en) | 2014-07-29 |
US20130084661A1 (en) | 2013-04-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5775409B2 (ja) | 光スキャナの製造方法 | |
JP5876329B2 (ja) | 光スキャナの製造方法 | |
JP4142919B2 (ja) | 光スキャナおよびその製造方法 | |
JP2003264203A (ja) | 半導体装置の製造方法 | |
TWI276602B (en) | MEMS device, method of manufacturing the same, and MEMS module | |
JP6284427B2 (ja) | 光偏向器及びその製造方法 | |
JP2004139085A (ja) | 2−dアクチュエータ及びその製造方法 | |
JP2009111147A (ja) | 半導体チップ及びその製造方法 | |
KR20110107154A (ko) | 광 스캐너 및 광 스캐너 제조 방법 | |
CN109052307B (zh) | 晶圆结构及晶圆加工方法 | |
JP2009093105A (ja) | マイクロミラー装置、およびミラー部形成方法 | |
JP5934621B2 (ja) | 光偏向器の製造方法 | |
TWI357104B (en) | Wafer grinding method | |
US7378293B2 (en) | MEMS fabrication method | |
US9676609B2 (en) | Integrated MEMS device | |
US6743653B2 (en) | Micromachine manufacturing method | |
TW200930653A (en) | Micro-device and method for manufacturing the same | |
JP6092590B2 (ja) | 光偏向器の製造方法 | |
JP2004333887A (ja) | 光スイッチ装置の製造方法 | |
WO2021070503A1 (ja) | ミラーデバイスの製造方法、及び、ミラーユニットの製造方法 | |
KR100931324B1 (ko) | 레이저 디스플레이용 박막형 2축 구동거울 및 그 제조방법 | |
JP7498127B2 (ja) | ミラーデバイスの製造方法 | |
WO2022137674A1 (ja) | ミラーデバイスの製造方法 | |
JP2014048327A (ja) | 光偏向器及びこれを用いる画像表示装置、光偏向器の製造方法 | |
JP3983176B2 (ja) | ミラー基板の製造方法及び光スイッチ装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20140910 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20150520 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150616 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150703 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5775409 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |