JP2013076781A - 光スキャナの製造方法 - Google Patents
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- 238000000034 method Methods 0.000 title claims abstract description 34
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 239000002313 adhesive film Substances 0.000 claims abstract description 7
- 238000004806 packaging method and process Methods 0.000 claims abstract description 4
- 230000002950 deficient Effects 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 239000011521 glass Substances 0.000 claims description 9
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
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- 235000012431 wafers Nutrition 0.000 description 49
- 239000010408 film Substances 0.000 description 19
- 239000010410 layer Substances 0.000 description 15
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 11
- 238000001020 plasma etching Methods 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 229910016570 AlCu Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 238000009623 Bosch process Methods 0.000 description 1
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- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
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- 239000011241 protective layer Substances 0.000 description 1
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- 229910052709 silver Inorganic materials 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00865—Multistep processes for the separation of wafers into individual elements
- B81C1/00873—Multistep processes for the separation of wafers into individual elements characterised by special arrangements of the devices, allowing an easier separation
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/10—Scanning systems
- G02B26/101—Scanning systems with both horizontal and vertical deflecting means, e.g. raster or XY scanners
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/04—Optical MEMS
- B81B2201/042—Micromirrors, not used as optical switches
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
- G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
- G02B26/0858—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD the reflecting means being moved or deformed by piezoelectric means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
- H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
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- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Mechanical Light Control Or Optical Switches (AREA)
- Micromachines (AREA)
- Mechanical Optical Scanning Systems (AREA)
- Facsimile Heads (AREA)
Abstract
【解決手段】 光スキャナ素子1を形成する加工ウエハ11の表面を加工する際に、光スキャナ素子1をチップとして個片化するためのダイシングストリート12を形成する工程と、加工ウエハ11が光スキャナ素子1の可動部に対応したキャビティ13を有する支持基板14を加工ウエハ11の一方の表面に仮接合する工程と、加工ウエハ11の仮接合面と反対側の面を粘着フィルム16に貼り付け、仮接合に用いた部材15の接合力を消失させて加工ウエハから支持基板14を剥離する工程と、粘着フィルム16をエキスパンドさせた後、光スキャナ素子1をピックアップしてパッケージングする工程とを備える。
【選択図】 図1
Description
前記光スキャナを形成する加工ウエハの一方の表面を所定の光スキャナ素子パターンに従って加工する際に、光スキャナ素子をチップとして個片化するためのダイシングストリートを形成する工程と、
前記加工ウエハが前記光スキャナ素子のミラーを中心とする可動部に対応したキャビティを有する支持基板を、前記可動部が前記キャビティの内側に位置して当該支持基板に接触しないように前記加工ウエハの一方の表面に仮接合する工程と、
前記加工ウエハのもう一方の表面を所定の光スキャナ素子パターンに従って加工する際に、前記光スキャナ素子をチップとして個片化するためのダイシングストリートを形成する工程と、
前記加工ウエハが前記支持基板に仮接合された状態で、前記加工ウエハの仮接合面と反対側の面を粘着フィルムに貼り付け、仮接合に用いた部材の接合力を消失させて前記加工ウエハから前記支持基板を剥離する工程と、
前記粘着フィルムをエキスパンドさせた後、各光スキャナ素子をピックアップしてパッケージングする工程とを備えることを特徴とする。
以下、図2に示すMEMS光スキャナ素子1を、図3及び図4に示す工程で作製する実施例について説明する。
・ ゲーム等の映像娯楽システム用レーザプロジェクタ
・ 車載用ヘッドアップディスプレイ
・ 車載インパネ用リアプロジェクションディスプレイ
・ 車載Aピラー用プロジェクションディスプレイ
Claims (4)
- 反射面を有するミラー部と、給電により該ミラー部を駆動するアクチュエータと、前記アクチュエータに給電するための複数の電極とを備えた光スキャナの製造方法であって、
前記光スキャナを形成する加工ウエハの一方の表面を所定の光スキャナ素子パターンに従って加工する際に、光スキャナ素子をチップとして個片化するためのダイシングストリートを形成する工程と、
前記加工ウエハが前記光スキャナ素子のミラーを中心とする可動部に対応したキャビティを有する支持基板を、前記可動部が前記キャビティの内側に位置して当該支持基板に接触しないように前記加工ウエハの一方の表面に仮接合する工程と、
前記加工ウエハのもう一方の表面を所定の光スキャナ素子パターンに従って加工する際に、前記光スキャナ素子をチップとして個片化するためのダイシングストリートを形成する工程と、
前記加工ウエハが前記支持基板に仮接合された状態で、前記加工ウエハの仮接合面と反対側の面を粘着フィルムに貼り付け、仮接合に用いた部材の接合力を消失させて前記加工ウエハから前記支持基板を剥離する工程と、
前記粘着フィルムをエキスパンドさせた後、各光スキャナ素子をピックアップしてパッケージングする工程と
を備えることを特徴とする光スキャナの製造方法。 - 前記光スキャナ素子をピックアップして、ダイボンド工程の前にテスティングを実施し、良品素子と不良素子とを選別し、良品素子のみを光スキャナパッケージとして仕上げることを特徴とする請求項1に記載の製造方法。
- 前記支持基板と前記加工ウエハとの仮接合に用いる接合部材は、紫外線の照射又は加熱によって硬化し、温水又は溶剤に浸すことによって剥離する材料からなることを特徴とする請求項1又は2に記載の製造方法。
- 前記支持基板は洗浄処理によって繰り返し使用可能なガラス又は石英からなることを特徴とする請求項1から3のいずれか1項に記載の製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011215622A JP5775409B2 (ja) | 2011-09-29 | 2011-09-29 | 光スキャナの製造方法 |
US13/613,847 US8790936B2 (en) | 2011-09-29 | 2012-09-13 | Method for manufacturing optical deflector for forming dicing street with double etching |
EP12006663.4A EP2574974B1 (en) | 2011-09-29 | 2012-09-21 | Method of manufacturing optical deflector by forming dicing street with double etching |
CN201210376372.5A CN103033927B (zh) | 2011-09-29 | 2012-09-29 | 利用双蚀刻形成切割道的光学偏转器制造方法 |
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JP2011215622A JP5775409B2 (ja) | 2011-09-29 | 2011-09-29 | 光スキャナの製造方法 |
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JP2013076781A true JP2013076781A (ja) | 2013-04-25 |
JP5775409B2 JP5775409B2 (ja) | 2015-09-09 |
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US (1) | US8790936B2 (ja) |
EP (1) | EP2574974B1 (ja) |
JP (1) | JP5775409B2 (ja) |
CN (1) | CN103033927B (ja) |
Cited By (2)
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JP2015102597A (ja) * | 2013-11-21 | 2015-06-04 | スタンレー電気株式会社 | 光偏向器及びその製造方法 |
JP2016018869A (ja) * | 2014-07-08 | 2016-02-01 | 株式会社ディスコ | ウェーハの加工方法 |
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JP6261923B2 (ja) * | 2013-09-17 | 2018-01-17 | スタンレー電気株式会社 | 光偏向ミラー及びこれを用いた光偏向器 |
US9346671B2 (en) * | 2014-02-04 | 2016-05-24 | Freescale Semiconductor, Inc. | Shielding MEMS structures during wafer dicing |
JP6284427B2 (ja) * | 2014-05-21 | 2018-02-28 | スタンレー電気株式会社 | 光偏向器及びその製造方法 |
CN106293312B (zh) * | 2015-05-27 | 2021-05-14 | 深圳市腾讯计算机***有限公司 | 终端可移动控件显示的方法和装置 |
JP6573231B2 (ja) | 2016-03-03 | 2019-09-11 | パナソニックIpマネジメント株式会社 | プラズマ処理方法 |
US11402579B2 (en) * | 2017-12-27 | 2022-08-02 | Medlumics S.L. | Techniques for fabricating waveguide facets and die separation |
DE102018215528A1 (de) | 2018-09-12 | 2020-03-12 | Robert Bosch Gmbh | Mikromechanisches Bauteil und Herstellungsverfahren für ein mikromechanisches Bauteil |
JP7386625B2 (ja) * | 2019-06-17 | 2023-11-27 | スタンレー電気株式会社 | 光偏向器の製造方法及び光偏向器 |
CN114388721B (zh) * | 2021-12-31 | 2023-12-12 | 昆山梦显电子科技有限公司 | 一种硅基oled显示基板 |
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Patent Citations (3)
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JP2003504221A (ja) * | 1999-07-13 | 2003-02-04 | インプット/アウトプット,インコーポレーテッド | 併合マスクの微細加工プロセス |
JP2004223620A (ja) * | 2003-01-20 | 2004-08-12 | Nippon Telegr & Teleph Corp <Ntt> | ミラー基板の製造方法及び光スイッチ装置の製造方法 |
WO2010139498A1 (de) * | 2009-06-03 | 2010-12-09 | Robert Bosch Gmbh | Bauelement mit einer mikromechanischen mikrofonstruktur und verfahren zu dessen herstellung |
Cited By (2)
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JP2015102597A (ja) * | 2013-11-21 | 2015-06-04 | スタンレー電気株式会社 | 光偏向器及びその製造方法 |
JP2016018869A (ja) * | 2014-07-08 | 2016-02-01 | 株式会社ディスコ | ウェーハの加工方法 |
Also Published As
Publication number | Publication date |
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US8790936B2 (en) | 2014-07-29 |
EP2574974B1 (en) | 2017-04-12 |
US20130084661A1 (en) | 2013-04-04 |
CN103033927A (zh) | 2013-04-10 |
CN103033927B (zh) | 2016-04-06 |
JP5775409B2 (ja) | 2015-09-09 |
EP2574974A1 (en) | 2013-04-03 |
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