JP5705396B2 - 発光素子封止用シリコーン組成物及び発光装置 - Google Patents
発光素子封止用シリコーン組成物及び発光装置 Download PDFInfo
- Publication number
- JP5705396B2 JP5705396B2 JP2006553818A JP2006553818A JP5705396B2 JP 5705396 B2 JP5705396 B2 JP 5705396B2 JP 2006553818 A JP2006553818 A JP 2006553818A JP 2006553818 A JP2006553818 A JP 2006553818A JP 5705396 B2 JP5705396 B2 JP 5705396B2
- Authority
- JP
- Japan
- Prior art keywords
- group
- sio
- sealing
- light
- silicone composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000203 mixture Substances 0.000 title claims description 57
- 229920001296 polysiloxane Polymers 0.000 title claims description 57
- 238000007789 sealing Methods 0.000 title claims description 40
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 35
- 239000000047 product Substances 0.000 claims description 29
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 25
- 125000003342 alkenyl group Chemical group 0.000 claims description 21
- 229910052710 silicon Inorganic materials 0.000 claims description 21
- 229910004283 SiO 4 Inorganic materials 0.000 claims description 17
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 16
- 239000010703 silicon Substances 0.000 claims description 13
- 125000001183 hydrocarbyl group Chemical group 0.000 claims description 9
- 229920006136 organohydrogenpolysiloxane Polymers 0.000 claims description 9
- 239000006087 Silane Coupling Agent Substances 0.000 claims description 8
- 239000007795 chemical reaction product Substances 0.000 claims description 7
- 238000006459 hydrosilylation reaction Methods 0.000 claims description 6
- 125000005375 organosiloxane group Chemical group 0.000 claims description 6
- 239000000945 filler Substances 0.000 claims description 5
- 125000004093 cyano group Chemical group *C#N 0.000 claims description 4
- 125000005843 halogen group Chemical group 0.000 claims description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 3
- 229910000077 silane Inorganic materials 0.000 claims description 3
- 230000003197 catalytic effect Effects 0.000 claims description 2
- 239000007809 chemical reaction catalyst Substances 0.000 claims description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 19
- 238000001723 curing Methods 0.000 description 17
- 239000003795 chemical substances by application Substances 0.000 description 12
- 239000000758 substrate Substances 0.000 description 12
- 239000003054 catalyst Substances 0.000 description 11
- -1 3,3,3-trifluoropropyl group Chemical group 0.000 description 9
- 125000004432 carbon atom Chemical group C* 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 7
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 7
- 238000002156 mixing Methods 0.000 description 7
- 229910052697 platinum Inorganic materials 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- 239000002683 reaction inhibitor Substances 0.000 description 5
- 239000004954 Polyphthalamide Substances 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 239000004205 dimethyl polysiloxane Substances 0.000 description 4
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 4
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 4
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 4
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 4
- 229920006375 polyphtalamide Polymers 0.000 description 4
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 4
- 239000003223 protective agent Substances 0.000 description 4
- 125000001731 2-cyanoethyl group Chemical group [H]C([H])(*)C([H])([H])C#N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 125000000217 alkyl group Chemical group 0.000 description 3
- 125000005998 bromoethyl group Chemical group 0.000 description 3
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 3
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 238000007259 addition reaction Methods 0.000 description 2
- 125000001931 aliphatic group Chemical group 0.000 description 2
- 125000003710 aryl alkyl group Chemical group 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 2
- 229910052794 bromium Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 125000004218 chloromethyl group Chemical group [H]C([H])(Cl)* 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000004132 cross linking Methods 0.000 description 2
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000003365 glass fiber Substances 0.000 description 2
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 2
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 125000000286 phenylethyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])C([H])([H])* 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920001843 polymethylhydrosiloxane Polymers 0.000 description 2
- 238000004382 potting Methods 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 125000000725 trifluoropropyl group Chemical group [H]C([H])(*)C([H])([H])C(F)(F)F 0.000 description 2
- KWEKXPWNFQBJAY-UHFFFAOYSA-N (dimethyl-$l^{3}-silanyl)oxy-dimethylsilicon Chemical compound C[Si](C)O[Si](C)C KWEKXPWNFQBJAY-UHFFFAOYSA-N 0.000 description 1
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- QYXVDGZUXHFXTO-UHFFFAOYSA-L 3-oxobutanoate;platinum(2+) Chemical compound [Pt+2].CC(=O)CC([O-])=O.CC(=O)CC([O-])=O QYXVDGZUXHFXTO-UHFFFAOYSA-L 0.000 description 1
- 238000004438 BET method Methods 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229920002430 Fibre-reinforced plastic Polymers 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 230000006750 UV protection Effects 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 125000004369 butenyl group Chemical group C(=CCC)* 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- 125000000068 chlorophenyl group Chemical group 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000003431 cross linking reagent Substances 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 125000000596 cyclohexenyl group Chemical group C1(=CCCCC1)* 0.000 description 1
- 125000005388 dimethylhydrogensiloxy group Chemical group 0.000 description 1
- 229920005645 diorganopolysiloxane polymer Polymers 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 239000011151 fibre-reinforced plastic Substances 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 125000001207 fluorophenyl group Chemical group 0.000 description 1
- 229910021485 fumed silica Inorganic materials 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 125000006038 hexenyl group Chemical group 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 125000000555 isopropenyl group Chemical group [H]\C([H])=C(\*)C([H])([H])[H] 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- CLSUSRZJUQMOHH-UHFFFAOYSA-L platinum dichloride Chemical group Cl[Pt]Cl CLSUSRZJUQMOHH-UHFFFAOYSA-L 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 125000004368 propenyl group Chemical group C(=CC)* 0.000 description 1
- 239000011226 reinforced ceramic Substances 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- 229930195735 unsaturated hydrocarbon Natural products 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 238000004383 yellowing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/296—Organo-silicon compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/12—Polysiloxanes containing silicon bound to hydrogen
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31652—Of asbestos
- Y10T428/31663—As siloxane, silicone or silane
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Polymers & Plastics (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Led Device Packages (AREA)
- Sealing Material Composition (AREA)
- Adhesives Or Adhesive Processes (AREA)
Description
(SiO4/2)a(ViR2SiO1/2)b(R3SiO1/2)c
で表される三次元網目状構造のビニル基含有オルガノポリシロキサンである。1分子中にケイ素原子と結合したビニル基を1個以上有することが必要であり、特にビニル基を2個以上有することが好ましい。
R2 dHeSiO[4−(d+e)]/2
で示されるものが用いられる。上式中R2は、脂肪族不飽和炭化水素基を除く、炭素原子数1〜12、好ましくは1〜8の置換または非置換の1価炭化水素基である。
本発明の実施形態の発光装置は、上述した発光素子封止用シリコーン組成物の硬化物によって発光素子が封止されている。発光素子を封止する態様は特に限定されるものではないが、例えば、図1に示すような表面実装型と称される発光装置が挙げられる。
[硬化物の線膨張係数]
発光素子封止用シリコーン組成物を150℃で1時間加熱することによって硬化物を作製した。この硬化物の線膨張係数をTMA(熱機械的分析)により25〜150℃の範囲で測定した。
[硬化物の剥離試験]
発光素子封止用シリコーン組成物を10×10×45mmのガラスセル中に0.85g充填し、80℃で2時間加熱し、さらに150℃で1時間加熱することによって硬化させ、硬化物を作製した。その後、60℃、90%RHで24時間吸湿後、260℃で10分間加熱した。これを冷却後、ガラスセルと硬化物との界面状態を観察した。
25℃において固体であり、式1:
[(CH3)3SiO1/2]5(SiO4/2)8[CH2=CH(CH3)2SiO1/2]
で表されるビニル基含有オルガノポリシロキサン(ケイ素原子結合ビニル基含有量1.0mmol/g)62重量部、粘度400mPa・sであり、式2:
[(CH2=CH)(CH3)2SiO1/2][(CH3)2SiO]130[(CH2=CH)(CH3)2SiO1/2]
で表される直鎖状の分子鎖両末端ジメチルビニルシロキシ基封鎖ジメチルポリシロキサン(ケイ素原子結合ビニル基含有量0.2mmol/g)38重量部、粘度20mPa・sであり、式3:
[(CH3)2HSiO1/2]2(SiO4/2)
で表されるオルガノハイドロジェンポリシロキサン(ケイ素原子結合水素原子の含有量10mmol/g)12.4重量部、シランカップリング剤としてCH2=C(CH3)COO(CH2)3Si(OCH3)3と式4:
[(CH3)HSiO]3(CH3)2SiOで表されるオルガノシロキサンとの反応生成物1.5重量部、白金触媒を白金原子として5ppm、式5:
[(CH2=CH)(CH3)SiO]4で表される反応抑制剤0.02重量部を混合して攪拌し、発光素子封止用シリコーン組成物を調整した。
25℃において固体であり、式1:
[(CH3)3SiO1/2]5(SiO4/2)8[CH2=CH(CH3)2SiO1/2]
で表されるビニル基含有オルガノポリシロキサン(ケイ素原子結合ビニル基含有量1.0mmol/g)50重量部、粘度50mPa・sであり、式6:
[(CH3)3SiO1/2]13(SiO4/2)5[CH2=CH(CH3)2SiO1/2]
で表されるビニル基含有オルガノポリシロキサン(ケイ素原子結合ビニル基含有量0.7mmol/g)50重量部、粘度20mPa・sであり、式3:
[(CH3)2HSiO1/2]2(SiO4/2)
で表されるオルガノハイドロジェンポリシロキサン(ケイ素原子結合水素原子の含有量10mmol/g)14.9重量部、シランカップリング剤としてCH2=C(CH3)COO(CH2)3Si(OCH3)3と式4:
[(CH3)HSiO]3(CH3)2SiOで表されるオルガノシロキサンとの反応生成物1.5重量部、白金触媒を白金原子として5ppm、式5:
[(CH2=CH)(CH3)SiO]4で表される反応抑制剤0.02重量部を均一に配合して、発光素子封止用シリコーン組成物を調整した。
25℃において固体であり、式1:
[(CH3)3SiO1/2]5(SiO4/2)8[CH2=CH(CH3)2SiO1/2]
で表されるビニル基含有オルガノポリシロキサン(ケイ素原子結合ビニル基含有量1.0mmol/g)40重量部、粘度3,000mPa・sであり、式7:
[(CH2=CH)(CH3)2SiO1/2][(CH3)2SiO]340[(CH2=CH)(CH3)2SiO1/2]
で表される直鎖状の分子鎖両末端ジメチルビニルシロキシ基封鎖ジメチルポリシロキサン(ケイ素原子結合ビニル基含有量0.08mmol/g)60重量部、粘度20mPa・sであり、式3:
[(CH3)2HSiO1/2]2(SiO4/2)
で表されるオルガノハイドロジェンポリシロキサン(ケイ素原子結合水素原子の含有量10mmol/g)7.9重量部、シランカップリング剤としてCH2=C(CH3)COO(CH2)3Si(OCH3)3と、式4:
[(CH3)HSiO]3(CH3)2SiO
で表されるオルガノシロキサンとの反応生成物1.5重量部、白金触媒を白金原子として5ppm、式5:
[(CH2=CH)(CH3)SiO]4
で表される反応抑制剤0.02重量部を均一に配合して、発光素子封止用シリコーン組成物を調整した。
25℃において固体であり、式1:
[(CH3)3SiO1/2]5(SiO4/2)8[CH2=CH(CH3)2SiO1/2]
で表されるビニル基含有オルガノポリシロキサン(ケイ素原子結合ビニル基含有量1.0mmol/g)10重量部、粘度3000mPa・sであり、式7:
[(CH2=CH)(CH3)2SiO1/2][(CH3)2SiO]340[(CH2=CH)(CH3)2SiO1/2]
で表される直鎖状の分子鎖両末端ジメチルビニルシロキシ基封鎖ジメチルポリシロキサン(ケイ素原子結合ビニル基含有量0.08mmol/g)90重量部、粘度20mPa・sであり、式3:
[(CH3)2HSiO1/2]2(SiO4/2)
で表されるオルガノハイドロジェンポリシロキサン(ケイ素原子結合水素原子の含有量10mmol/g)3.0重量部、シランカップリング剤としてCH2=C(CH3)COO(CH2)3Si(OCH3)3と式4:
[(CH3)HSiO]3(CH3)2SiOで表されるオルガノシロキサンとの反応生成物1.5重量部、白金触媒を白金原子として5ppm、式5:
[(CH2=CH)(CH3)SiO]4で表される反応抑制剤0.02重量部を均一に配合して、発光素子封止用シリコーン組成物を調整した。
Claims (5)
- (A)平均単位式:
(SiO4/2)a(ViR2SiO1/2)b(R3SiO1/2)c
(式中、Viはビニル基を表し、Rは同じかまたは異なる、アルケニル基を除く、非置換もしくは水素原子の一部または全部がハロゲン原子あるいはシアノ基で置換された1価炭化水素基であり、a、b及びcはそれぞれ正数であり、且つa/(a+b+c)は0.2〜0.6の数であり、b/(a+b+c)は0.001〜0.2の数である。)で表される三次元網目状構造のビニル基含有オルガノポリシロキサン、
(B)1分子中に少なくとも2個のケイ素原子結合水素原子を有するオルガノハイドロジェンポリシロキサン (A)成分のケイ素原子に結合するビニル基1モルに対し、ケイ素原子結合水素原子が0.3〜3.0モルとなる量、
(C)ヒドロシリル化反応用触媒(触媒量)、および
シランカップリング剤として、式:CH2=C(CH3)COO(CH2)3Si(OCH3)3で表されるシランと、式:[(CH3)HSiO]3(CH3)2SiOで表されるオルガノシロキサンとの反応生成物 前記(A)〜(C)成分の合計量100重量部あたり0.1〜5重量部
を含有し、充填剤を含有しない組成物であり、
硬化後の線膨張係数が10〜290×10−6/℃であることを特徴とする発光素子封止用シリコーン組成物。 - 前記(B)成分であるオルガノハイドロジェンポリシロキサンは、ジオルガノハイドロジェンシロキサン単位とSiO4/2単位を含む三次元網目状構造を有することを特徴とする請求項1に記載の発光素子封止用シリコーン組成物。
- 前記(A)成分の25℃における粘度が、1〜100,000mPa・sであることを特徴とする請求項1に記載の発光素子封止用シリコーン組成物。
- 25℃における粘度が10,000mPa・s以下であることを特徴とする請求項1に記載の発光素子封止用シリコーン組成物。
- 請求項1に記載の発光素子封止用シリコーン組成物の硬化物によって発光素子が封止されていることを特徴とする発光装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006553818A JP5705396B2 (ja) | 2005-01-24 | 2005-07-22 | 発光素子封止用シリコーン組成物及び発光装置 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005015263 | 2005-01-24 | ||
JP2005015263 | 2005-01-24 | ||
PCT/JP2005/013451 WO2006077667A1 (ja) | 2005-01-24 | 2005-07-22 | 発光素子封止用シリコーン組成物及び発光装置 |
JP2006553818A JP5705396B2 (ja) | 2005-01-24 | 2005-07-22 | 発光素子封止用シリコーン組成物及び発光装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014035718A Division JP5638714B2 (ja) | 2005-01-24 | 2014-02-26 | 発光素子封止用シリコーン組成物及び発光装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2006077667A1 JPWO2006077667A1 (ja) | 2008-06-19 |
JP5705396B2 true JP5705396B2 (ja) | 2015-04-22 |
Family
ID=36692063
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006553818A Active JP5705396B2 (ja) | 2005-01-24 | 2005-07-22 | 発光素子封止用シリコーン組成物及び発光装置 |
JP2014035718A Expired - Fee Related JP5638714B2 (ja) | 2005-01-24 | 2014-02-26 | 発光素子封止用シリコーン組成物及び発光装置 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014035718A Expired - Fee Related JP5638714B2 (ja) | 2005-01-24 | 2014-02-26 | 発光素子封止用シリコーン組成物及び発光装置 |
Country Status (8)
Country | Link |
---|---|
US (2) | US8293849B2 (ja) |
EP (2) | EP2955206A1 (ja) |
JP (2) | JP5705396B2 (ja) |
KR (1) | KR101158955B1 (ja) |
CN (1) | CN101107324B (ja) |
HK (1) | HK1116208A1 (ja) |
TW (1) | TWI277635B (ja) |
WO (1) | WO2006077667A1 (ja) |
Families Citing this family (58)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5247979B2 (ja) * | 2005-06-01 | 2013-07-24 | モメンティブ・パフォーマンス・マテリアルズ・ジャパン合同会社 | 透明な硬化物を与えるポリオルガノシロキサン組成物 |
JP2007063538A (ja) * | 2005-08-03 | 2007-03-15 | Shin Etsu Chem Co Ltd | 発光ダイオード用付加硬化型シリコーン樹脂組成物 |
JP2007246880A (ja) * | 2006-02-20 | 2007-09-27 | Matsushita Electric Works Ltd | 半導体光装置及び透明光学部材 |
TWI447176B (zh) * | 2006-10-19 | 2014-08-01 | Momentive Performance Mat Jp | 硬化性聚有機矽氧烷組成物 |
JP2008115302A (ja) * | 2006-11-06 | 2008-05-22 | Kaneka Corp | シリコーン系重合体粒子を含有する光学材料用シリコーン系組成物 |
WO2008065787A1 (en) * | 2006-11-27 | 2008-06-05 | Panasonic Electric Works Co., Ltd. | Optical semiconductor device and transparent optical member |
JP5210880B2 (ja) * | 2006-11-27 | 2013-06-12 | パナソニック株式会社 | 半導体光装置及び透明光学部材 |
WO2008065786A1 (fr) * | 2006-11-27 | 2008-06-05 | Panasonic Electric Works Co., Ltd. | Dispositif optique à semiconducteur et élément optique transparent |
JP5210881B2 (ja) * | 2006-11-27 | 2013-06-12 | パナソニック株式会社 | 半導体光装置及び透明光学部材 |
US20110021649A1 (en) * | 2007-02-07 | 2011-01-27 | Atsushi Sakuma | Sponge-Forming Liquid Silicone-Rubber Composition and Silicone Rubber Sponge Made Therefrom |
JP2008222828A (ja) * | 2007-03-12 | 2008-09-25 | Momentive Performance Materials Japan Kk | 凸レンズ形成用シリコーンゴム組成物及びそれを用いた光半導体装置 |
TWI458780B (zh) | 2007-07-31 | 2014-11-01 | Dow Corning Toray Co Ltd | 提供高透明矽酮硬化物之硬化性矽酮組合物 |
JP5211059B2 (ja) * | 2007-08-17 | 2013-06-12 | パナソニック株式会社 | 半導体光装置及び透明光学部材 |
CN101230197B (zh) * | 2007-12-20 | 2011-01-19 | 宁波安迪光电科技有限公司 | 用于制造发光二极管封装用胶水的有机硅组合物 |
JP5149022B2 (ja) * | 2008-01-25 | 2013-02-20 | モメンティブ・パフォーマンス・マテリアルズ・ジャパン合同会社 | 光半導体封止用シリコーン組成物及びそれを用いた光半導体装置 |
JP5577250B2 (ja) | 2008-07-31 | 2014-08-20 | 東レ・ダウコーニング株式会社 | 多成分型スポンジ形成性液状シリコーンゴム組成物およびシリコーンゴムスポンジの製造方法 |
JP5568240B2 (ja) * | 2009-02-02 | 2014-08-06 | 東レ・ダウコーニング株式会社 | 硬化性シリコーンゴム組成物 |
JP5475295B2 (ja) | 2009-02-02 | 2014-04-16 | 東レ・ダウコーニング株式会社 | 高透明のシリコーン硬化物を与える硬化性シリコーン組成物 |
JP5475296B2 (ja) | 2009-02-02 | 2014-04-16 | 東レ・ダウコーニング株式会社 | 高透明のシリコーン硬化物を与える硬化性シリコーン組成物 |
US20100289055A1 (en) * | 2009-05-14 | 2010-11-18 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Silicone leaded chip carrier |
CN101712800B (zh) * | 2009-11-06 | 2012-10-03 | 陈俊光 | 大功率led的有机硅树脂封装料及其制备方法 |
CN101717584B (zh) * | 2009-11-20 | 2012-01-25 | 陈俊光 | 大功率led的有机硅凝胶封装料及其制备方法 |
JP5549568B2 (ja) | 2009-12-15 | 2014-07-16 | 信越化学工業株式会社 | 光半導体素子封止用樹脂組成物及び当該組成物で封止した光半導体装置 |
WO2011081223A1 (en) * | 2009-12-29 | 2011-07-07 | Dow Corning Toray Co., Ltd. | Curable liquid silicone rubber composition for forming a sealing member and sealing member |
KR101853598B1 (ko) * | 2010-03-23 | 2018-04-30 | 가부시키가이샤 아사히 러버 | 실리콘 수지제 반사 기재, 그 제조 방법, 및 그 반사 기재에 이용하는 원재료 조성물 |
JPWO2011136302A1 (ja) * | 2010-04-28 | 2013-07-22 | 三菱化学株式会社 | 半導体発光装置用パッケージ及び発光装置 |
KR101277722B1 (ko) | 2010-07-14 | 2013-06-24 | 제일모직주식회사 | 하이브리드 실록산 중합체, 상기 하이브리드 실록산 중합체로부터 형성된 봉지재 및 상기 봉지재를 포함하는 전자 소자 |
JP2012049519A (ja) * | 2010-07-26 | 2012-03-08 | Mitsubishi Chemicals Corp | 半導体発光装置用パッケージ及び発光装置 |
CN101974228B (zh) * | 2010-10-11 | 2012-12-05 | 广州亿锘有机硅技术有限公司 | 一种发光元件封装用有机硅胶材料及其制备方法 |
CN102115605B (zh) * | 2010-12-23 | 2013-12-04 | 东莞市良展有机硅科技有限公司 | 一种封装硅胶的制备方法、制品及其应用 |
JP6300218B2 (ja) | 2010-12-31 | 2018-03-28 | サムスン エスディアイ カンパニー, リミテッドSamsung Sdi Co., Ltd. | 封止材用透光性樹脂組成物、該透光性樹脂を含む封止材および電子素子 |
CN103547632A (zh) * | 2011-07-14 | 2014-01-29 | 积水化学工业株式会社 | 光半导体装置用密封剂及光半导体装置 |
JP5839880B2 (ja) * | 2011-08-04 | 2016-01-06 | 日東電工株式会社 | シリコーン樹脂組成物、封止材料および発光ダイオード装置 |
JP6057503B2 (ja) * | 2011-09-21 | 2017-01-11 | 東レ・ダウコーニング株式会社 | 光半導体素子封止用硬化性シリコーン組成物、樹脂封止光半導体素子の製造方法、および樹脂封止光半導体素子 |
EP2752459B1 (en) * | 2011-12-08 | 2017-11-15 | Momentive Performance Materials Japan LLC | Hydrosilylation-curable silicone rubber composition |
KR101946914B1 (ko) * | 2012-06-08 | 2019-02-12 | 엘지이노텍 주식회사 | 발광소자, 발광소자 패키지 및 라이트 유닛 |
CN104662098A (zh) | 2012-08-02 | 2015-05-27 | 汉高股份有限公司 | 用于led封装剂的包含聚碳硅烷和含氢聚硅氧烷的可固化组合物 |
WO2014019188A1 (en) * | 2012-08-02 | 2014-02-06 | Henkel (China) Company Limited | Polycarbosilane and curable compositions for led encapsulants comprising same |
JP5524424B1 (ja) * | 2012-09-27 | 2014-06-18 | モメンティブ・パフォーマンス・マテリアルズ・ジャパン合同会社 | 光半導体素子封止用シリコーン組成物および光半導体装置 |
JP5851970B2 (ja) * | 2012-10-29 | 2016-02-03 | 信越化学工業株式会社 | シリコーン樹脂組成物、並びにこれを用いたシリコーン積層基板とその製造方法、及びled装置 |
WO2014084624A1 (ko) * | 2012-11-30 | 2014-06-05 | 코오롱생명과학 주식회사 | 광디바이스용 경화형 투명 실리콘 조성물 |
WO2014088451A1 (ru) * | 2012-12-06 | 2014-06-12 | Vishnyakov Anatoly Vasilyevich | Способ получения модифицированных трехцветных светодиодных источников белого света |
CN103013433B (zh) * | 2012-12-27 | 2014-04-09 | 广州天赐有机硅科技有限公司 | 一种高透明、高折光、自粘结的有机硅材料及其制备方法 |
KR20140103696A (ko) * | 2013-02-19 | 2014-08-27 | 한국다우코닝(주) | 인광체-함유 경화성 실리콘 조성물 및 이로부터 제조된 경화성 핫멜트 필름 |
JP6010503B2 (ja) * | 2013-05-14 | 2016-10-19 | 信越化学工業株式会社 | 硬化性樹脂組成物、その硬化物及び光半導体デバイス |
CN103320087A (zh) * | 2013-06-03 | 2013-09-25 | 曹坚林 | 一种液体光学透明有机硅材料及其制备方法 |
CN105440694B (zh) * | 2014-08-27 | 2018-01-23 | 广州慧谷化学有限公司 | 有机聚硅氧烷组合物及其制备方法及半导体器件 |
WO2016065418A1 (en) * | 2014-10-28 | 2016-05-06 | Maxheat Hot Water Pty Ltd | Hot water storage device |
JP5956697B1 (ja) | 2014-12-18 | 2016-07-27 | モメンティブ・パフォーマンス・マテリアルズ・ジャパン合同会社 | 難燃性ポリオルガノシロキサン組成物、難燃性硬化物、光学用部材、光源用レンズまたはカバー、および成形方法 |
CN105778515A (zh) | 2014-12-26 | 2016-07-20 | 广东生益科技股份有限公司 | 一种无卤无磷硅树脂组合物以及使用它的预浸料、层压板、覆铜板以及印制电路板 |
JP6544962B2 (ja) * | 2015-03-27 | 2019-07-17 | 東レエンジニアリング株式会社 | Ledモジュールおよびledモジュールの製造方法 |
JP2017206622A (ja) * | 2016-05-19 | 2017-11-24 | 株式会社オートネットワーク技術研究所 | 止水用シリコーンゴム組成物、止水用シリコーンゴム成形体およびワイヤーハーネス |
CN106147602A (zh) * | 2016-07-27 | 2016-11-23 | 天津凯华绝缘材料股份有限公司 | 一种电子元件封装用有机硅组合物及其制备方法 |
KR20180034937A (ko) * | 2016-09-28 | 2018-04-05 | 모멘티브퍼포먼스머티리얼스코리아 주식회사 | 유기 전자 소자 봉지재용 조성물 및 이를 이용하여 형성된 봉지재 |
WO2019202837A1 (ja) * | 2018-04-16 | 2019-10-24 | 信越化学工業株式会社 | 有機el用透明乾燥剤及びその使用方法 |
TW201946976A (zh) | 2018-05-11 | 2019-12-16 | 美商陶氏有機矽公司 | 可固化聚矽氧組成物及其固化產物 |
TW201946975A (zh) * | 2018-05-11 | 2019-12-16 | 美商陶氏有機矽公司 | 用於可撓式顯示器之聚矽氧背板 |
JP7014745B2 (ja) * | 2019-01-29 | 2022-02-01 | 信越化学工業株式会社 | 付加硬化型シリコーン樹脂組成物及び光学素子 |
Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07252419A (ja) * | 1994-03-16 | 1995-10-03 | Dow Corning Kk | 硬化性オルガノポリシロキサン組成物 |
JPH07294701A (ja) * | 1994-04-21 | 1995-11-10 | Dow Corning Kk | 光学素子用樹脂組成物 |
JP2000129132A (ja) * | 1998-10-28 | 2000-05-09 | Dow Corning Corp | シリコ―ン組成物、それらの製造法及びシリコ―ンエラストマ― |
JP2000198930A (ja) * | 1998-12-28 | 2000-07-18 | Shin Etsu Chem Co Ltd | 付加硬化型シリコ―ン組成物 |
JP2001002922A (ja) * | 1999-06-21 | 2001-01-09 | Shin Etsu Chem Co Ltd | 半導体装置封止用付加硬化型シリコーン組成物及び半導体装置 |
JP2004143361A (ja) * | 2002-10-28 | 2004-05-20 | Dow Corning Toray Silicone Co Ltd | 硬化性オルガノポリシロキサン組成物および半導体装置 |
JP2004323764A (ja) * | 2003-04-28 | 2004-11-18 | Ge Toshiba Silicones Co Ltd | 接着性ポリオルガノシロキサン組成物 |
JP2004359756A (ja) * | 2003-06-03 | 2004-12-24 | Wacker Asahikasei Silicone Co Ltd | Led用封止剤組成物 |
JP2005008657A (ja) * | 2003-06-16 | 2005-01-13 | Ge Toshiba Silicones Co Ltd | 低透湿性ポリオルガノシロキサン組成物 |
JP2005042099A (ja) * | 2003-07-09 | 2005-02-17 | Shin Etsu Chem Co Ltd | シリコーンゴム組成物並びに発光半導体被覆保護材及び発光半導体装置 |
JP2005197681A (ja) * | 2003-12-31 | 2005-07-21 | Dongbuanam Semiconductor Inc | Cmosイメージセンサ及びその製造方法 |
JP2006137895A (ja) * | 2004-11-15 | 2006-06-01 | Ge Toshiba Silicones Co Ltd | 光学材料用ポリオルガノシロキサン組成物 |
JP2006519896A (ja) * | 2003-02-19 | 2006-08-31 | ニューシル・テクノロジー・リミテッド・ライアビリティ・カンパニー | 光学的透明性及び高温耐性を有する高屈折率のポリシロキサン |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62232460A (ja) | 1986-04-01 | 1987-10-12 | Toray Silicone Co Ltd | 熱硬化性樹脂組成物 |
JP3270489B2 (ja) | 1991-01-30 | 2002-04-02 | 東レ・ダウコーニング・シリコーン株式会社 | 硬化性オルガノポリシロキサン組成物 |
US5717010A (en) * | 1992-01-23 | 1998-02-10 | General Electric Company | Low compression set silicone elastomers |
AU5131793A (en) | 1992-09-21 | 1994-04-12 | Thermoset Plastics, Inc. | Thermoplastic modified, thermosetting polyester encapsulants for microelectronics |
GB9317813D0 (en) * | 1993-08-27 | 1993-10-13 | Dow Corning Sa | Silicone emulsion compositions |
JPH1112470A (ja) * | 1997-06-25 | 1999-01-19 | Toray Dow Corning Silicone Co Ltd | 高電圧電気絶縁部品用液状シリコーンゴム組成物 |
US6262188B1 (en) | 1998-12-23 | 2001-07-17 | General Electric Company | Functionalized MQ resin as an adhesion enhancing additive |
JP2003515770A (ja) * | 1999-11-30 | 2003-05-07 | コーニング・オー・テー・イー・エス・ペー・アー | 光学装置の光ファイバ部品を固定する方法、これにより得られた光学装置、およびこの光学装置で用いられるポリマ組成物 |
WO2001081475A1 (fr) * | 2000-04-21 | 2001-11-01 | Kaneka Corporation | Composition durcissable, composition pour un materiau optique, materiau optique, affichage a cristaux liquides, film conducteur transparent et procede de production associe |
JP3910080B2 (ja) * | 2001-02-23 | 2007-04-25 | 株式会社カネカ | 発光ダイオード |
JP4880837B2 (ja) | 2001-09-05 | 2012-02-22 | 株式会社カネカ | 硬化性組成物および硬化物 |
JP2004002810A (ja) * | 2002-04-18 | 2004-01-08 | Kanegafuchi Chem Ind Co Ltd | 光学材料用硬化性組成物、光学用材料、光学用材料の製造方法および光学材料を用いた発光ダイオード |
JP4360595B2 (ja) | 2002-10-18 | 2009-11-11 | ペルノックス株式会社 | 光電変換装置 |
JP2004186168A (ja) | 2002-11-29 | 2004-07-02 | Shin Etsu Chem Co Ltd | 発光ダイオード素子用シリコーン樹脂組成物 |
US20040138396A1 (en) | 2003-01-13 | 2004-07-15 | Gabriel Karim M. | Resins and diluents for use in single component low volatile organic |
JP4766222B2 (ja) | 2003-03-12 | 2011-09-07 | 信越化学工業株式会社 | 発光半導体被覆保護材及び発光半導体装置 |
TW200427111A (en) * | 2003-03-12 | 2004-12-01 | Shinetsu Chemical Co | Material for coating/protecting light-emitting semiconductor and the light-emitting semiconductor device |
TWI373150B (en) | 2003-07-09 | 2012-09-21 | Shinetsu Chemical Co | Silicone rubber composition, light-emitting semiconductor embedding/protecting material and light-emitting semiconductor device |
US7287573B2 (en) * | 2003-09-30 | 2007-10-30 | General Electric Company | Silicone binders for investment casting |
-
2005
- 2005-07-22 JP JP2006553818A patent/JP5705396B2/ja active Active
- 2005-07-22 EP EP15179426.0A patent/EP2955206A1/en not_active Withdrawn
- 2005-07-22 US US11/795,603 patent/US8293849B2/en active Active
- 2005-07-22 EP EP05766435.1A patent/EP1845133B1/en not_active Revoked
- 2005-07-22 KR KR1020077016713A patent/KR101158955B1/ko active IP Right Grant
- 2005-07-22 CN CN2005800471634A patent/CN101107324B/zh active Active
- 2005-07-22 WO PCT/JP2005/013451 patent/WO2006077667A1/ja active Application Filing
- 2005-07-26 TW TW94125303A patent/TWI277635B/zh not_active IP Right Cessation
-
2008
- 2008-06-11 HK HK08106451A patent/HK1116208A1/xx not_active IP Right Cessation
-
2012
- 2012-06-05 US US13/489,140 patent/US8637628B2/en not_active Expired - Fee Related
-
2014
- 2014-02-26 JP JP2014035718A patent/JP5638714B2/ja not_active Expired - Fee Related
Patent Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07252419A (ja) * | 1994-03-16 | 1995-10-03 | Dow Corning Kk | 硬化性オルガノポリシロキサン組成物 |
JPH07294701A (ja) * | 1994-04-21 | 1995-11-10 | Dow Corning Kk | 光学素子用樹脂組成物 |
JP2000129132A (ja) * | 1998-10-28 | 2000-05-09 | Dow Corning Corp | シリコ―ン組成物、それらの製造法及びシリコ―ンエラストマ― |
JP2000198930A (ja) * | 1998-12-28 | 2000-07-18 | Shin Etsu Chem Co Ltd | 付加硬化型シリコ―ン組成物 |
JP2001002922A (ja) * | 1999-06-21 | 2001-01-09 | Shin Etsu Chem Co Ltd | 半導体装置封止用付加硬化型シリコーン組成物及び半導体装置 |
JP2004143361A (ja) * | 2002-10-28 | 2004-05-20 | Dow Corning Toray Silicone Co Ltd | 硬化性オルガノポリシロキサン組成物および半導体装置 |
JP2006519896A (ja) * | 2003-02-19 | 2006-08-31 | ニューシル・テクノロジー・リミテッド・ライアビリティ・カンパニー | 光学的透明性及び高温耐性を有する高屈折率のポリシロキサン |
JP2004323764A (ja) * | 2003-04-28 | 2004-11-18 | Ge Toshiba Silicones Co Ltd | 接着性ポリオルガノシロキサン組成物 |
JP2004359756A (ja) * | 2003-06-03 | 2004-12-24 | Wacker Asahikasei Silicone Co Ltd | Led用封止剤組成物 |
JP2005008657A (ja) * | 2003-06-16 | 2005-01-13 | Ge Toshiba Silicones Co Ltd | 低透湿性ポリオルガノシロキサン組成物 |
JP2005042099A (ja) * | 2003-07-09 | 2005-02-17 | Shin Etsu Chem Co Ltd | シリコーンゴム組成物並びに発光半導体被覆保護材及び発光半導体装置 |
JP2005197681A (ja) * | 2003-12-31 | 2005-07-21 | Dongbuanam Semiconductor Inc | Cmosイメージセンサ及びその製造方法 |
JP2006137895A (ja) * | 2004-11-15 | 2006-06-01 | Ge Toshiba Silicones Co Ltd | 光学材料用ポリオルガノシロキサン組成物 |
Also Published As
Publication number | Publication date |
---|---|
US8293849B2 (en) | 2012-10-23 |
HK1116208A1 (en) | 2008-12-19 |
US8637628B2 (en) | 2014-01-28 |
CN101107324B (zh) | 2012-02-01 |
KR101158955B1 (ko) | 2012-06-21 |
EP1845133B1 (en) | 2015-10-14 |
TWI277635B (en) | 2007-04-01 |
CN101107324A (zh) | 2008-01-16 |
EP2955206A1 (en) | 2015-12-16 |
JP2014168060A (ja) | 2014-09-11 |
EP1845133A1 (en) | 2007-10-17 |
TW200626677A (en) | 2006-08-01 |
JPWO2006077667A1 (ja) | 2008-06-19 |
EP1845133A4 (en) | 2011-11-30 |
US20120306363A1 (en) | 2012-12-06 |
KR20070097075A (ko) | 2007-10-02 |
WO2006077667A1 (ja) | 2006-07-27 |
JP5638714B2 (ja) | 2014-12-10 |
US20080160322A1 (en) | 2008-07-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5638714B2 (ja) | 発光素子封止用シリコーン組成物及び発光装置 | |
JP5149022B2 (ja) | 光半導体封止用シリコーン組成物及びそれを用いた光半導体装置 | |
JP4586967B2 (ja) | 発光半導体被覆保護材及び発光半導体装置 | |
JP4841846B2 (ja) | 硬化性オルガノポリシロキサン組成物及び半導体装置 | |
KR102282547B1 (ko) | 다이 본딩용 경화성 실리콘 조성물 | |
US9564562B2 (en) | Silicone composition for sealing semiconductor | |
JP2010174250A (ja) | 発光半導体被覆保護材及び発光半導体装置 | |
JP4479882B2 (ja) | 砲弾型発光半導体装置 | |
JP6884458B2 (ja) | 硬化性オルガノポリシロキサン組成物および半導体装置 | |
TW201843282A (zh) | 晶粒黏著用聚矽氧樹脂組成物及硬化物 | |
JP2009114365A (ja) | 光半導体用シリコーン接着剤組成物及びそれを用いた光半導体装置 | |
JP2008120844A (ja) | 光半導体用シリコーン接着剤組成物及びそれを用いた光半導体装置 | |
JP6620703B2 (ja) | 熱伝導性シリコーン樹脂組成物及びその硬化方法 | |
JP2007180284A (ja) | 発光装置 | |
JP2020070324A (ja) | 付加硬化型シリコーン樹脂組成物、その硬化物、及び光半導体装置 | |
JP2007154036A (ja) | 低タック性を有する電気・電子部品被覆用硬化性組成物 | |
JP5284490B2 (ja) | 半導体封止用シリコーン組成物 | |
TW202221063A (zh) | 熱熔性矽酮組成物、密封劑、熱熔膠及光半導體裝置 | |
JP2022178085A (ja) | 硬化性シリコーン組成物、封止剤、及び光半導体装置 | |
KR20120103147A (ko) | 경화성 오가노폴리실록산 조성물 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20080703 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120403 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120518 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120911 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121102 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20121204 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130201 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20131126 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140226 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20140408 |
|
A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20140509 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150225 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5705396 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |