JP5239265B2 - シリコン単結晶引上げ用種結晶及び該種結晶を使用したシリコン単結晶の製造方法 - Google Patents
シリコン単結晶引上げ用種結晶及び該種結晶を使用したシリコン単結晶の製造方法 Download PDFInfo
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- JP5239265B2 JP5239265B2 JP2007232233A JP2007232233A JP5239265B2 JP 5239265 B2 JP5239265 B2 JP 5239265B2 JP 2007232233 A JP2007232233 A JP 2007232233A JP 2007232233 A JP2007232233 A JP 2007232233A JP 5239265 B2 JP5239265 B2 JP 5239265B2
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- Prior art keywords
- seed crystal
- crystal
- single crystal
- silicon single
- carbon
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- 239000013078 crystal Substances 0.000 title claims description 167
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 96
- 229910052710 silicon Inorganic materials 0.000 title claims description 96
- 239000010703 silicon Substances 0.000 title claims description 96
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 229910052799 carbon Inorganic materials 0.000 claims description 58
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 56
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 46
- 229910052757 nitrogen Inorganic materials 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 17
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 15
- 229910052760 oxygen Inorganic materials 0.000 claims description 15
- 239000001301 oxygen Substances 0.000 claims description 15
- 125000004429 atom Chemical group 0.000 description 15
- 230000000694 effects Effects 0.000 description 14
- 238000001556 precipitation Methods 0.000 description 14
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 12
- 229910052796 boron Inorganic materials 0.000 description 12
- 230000035939 shock Effects 0.000 description 11
- 238000005259 measurement Methods 0.000 description 8
- 239000010410 layer Substances 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 5
- 238000005204 segregation Methods 0.000 description 4
- 239000002344 surface layer Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 150000001721 carbon Chemical group 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000007373 indentation Methods 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000002195 synergetic effect Effects 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
Claims (2)
- チョクラルスキー法によるシリコン単結晶の引上げに使用される種結晶において、
前記種結晶が炭素と、炭素の他に、窒素もドープされたシリコン融液から引上げられたシリコン単結晶から切り出されたものであって、
前記ドープされている炭素の濃度が5×1015〜5×1017atoms/cm3の割合、前記窒素の濃度が5×10 13 〜5×10 15 atoms/cm 3 の割合であり、
前記種結晶中の酸素の濃度が1×10 18 〜2×10 18 atoms/cm 3 の割合である
ことを特徴とするシリコン単結晶引上げ用種結晶。 - チョクラルスキー法により種結晶に導かれたシリコン融液を引上げてシリコン単結晶を育成するシリコン単結晶の製造方法において、
前記種結晶が炭素と、炭素の他に、窒素もドープされたシリコン融液から引上げられたシリコン単結晶から切り出されたものであって、
前記ドープされている炭素の濃度が5×1015〜5×1017atoms/cm3の割合、前記窒素の濃度が5×10 13 〜5×10 15 atoms/cm 3 の割合であり、
前記種結晶中の酸素の濃度が1×10 18 〜2×10 18 atoms/cm 3 の割合である ことを特徴とするシリコン単結晶の製造方法。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007232233A JP5239265B2 (ja) | 2007-09-07 | 2007-09-07 | シリコン単結晶引上げ用種結晶及び該種結晶を使用したシリコン単結晶の製造方法 |
PCT/JP2008/062899 WO2009031365A1 (ja) | 2007-09-07 | 2008-07-17 | シリコン単結晶引上げ用種結晶及び該種結晶を使用したシリコン単結晶の製造方法 |
KR1020107005105A KR101215433B1 (ko) | 2007-09-07 | 2008-07-17 | 실리콘 단결정 인상용 종결정 및 해당 종결정을 사용한 실리콘 단결정의 제조 방법 |
EP08778241.3A EP2186929A4 (en) | 2007-09-07 | 2008-07-17 | CRYSTALLINE GERM FOR DRAWING SILICON MONOCRYSTAL AND PROCESS FOR MANUFACTURING THE SAME USING CRYSTALLINE GERM |
CN200880105838XA CN101796225B (zh) | 2007-09-07 | 2008-07-17 | 硅单晶提拉用晶种以及使用该晶种的硅单晶的制造方法 |
US12/676,634 US20100242832A1 (en) | 2007-09-07 | 2008-07-17 | Seed crystal for pulling silicon single crystal and method for manufacturing silicon single crystal by using the seed crystal |
TW097130839A TWI395840B (zh) | 2007-09-07 | 2008-08-13 | 矽單晶提拉用種晶及使用該種晶之矽單晶製造方法 |
Applications Claiming Priority (1)
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---|---|---|---|
JP2007232233A JP5239265B2 (ja) | 2007-09-07 | 2007-09-07 | シリコン単結晶引上げ用種結晶及び該種結晶を使用したシリコン単結晶の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009062233A JP2009062233A (ja) | 2009-03-26 |
JP5239265B2 true JP5239265B2 (ja) | 2013-07-17 |
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JP2007232233A Active JP5239265B2 (ja) | 2007-09-07 | 2007-09-07 | シリコン単結晶引上げ用種結晶及び該種結晶を使用したシリコン単結晶の製造方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20100242832A1 (ja) |
EP (1) | EP2186929A4 (ja) |
JP (1) | JP5239265B2 (ja) |
KR (1) | KR101215433B1 (ja) |
CN (1) | CN101796225B (ja) |
TW (1) | TWI395840B (ja) |
WO (1) | WO2009031365A1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5302556B2 (ja) | 2008-03-11 | 2013-10-02 | Sumco Techxiv株式会社 | シリコン単結晶引上装置及びシリコン単結晶の製造方法 |
CN103205800B (zh) * | 2012-01-17 | 2016-04-27 | 江苏协鑫硅材料科技发展有限公司 | 提高铸造单晶硅铸锭成品率和转换效率的方法 |
WO2013145558A1 (ja) * | 2012-03-26 | 2013-10-03 | 株式会社Sumco | 多結晶シリコンおよびその鋳造方法 |
JP6592941B2 (ja) * | 2015-04-09 | 2019-10-23 | 株式会社Sumco | 単結晶引き上げ用種結晶保持具及びこれを用いたシリコン単結晶の製造方法 |
CN105568364A (zh) * | 2015-12-30 | 2016-05-11 | 佛山市业丰赛尔陶瓷科技有限公司 | 提高铸造单晶硅铸锭成品率和/或转换效率的方法 |
CN112140374B (zh) * | 2019-06-29 | 2022-08-12 | 洛阳阿特斯光伏科技有限公司 | 一种多晶硅棒的切割方法 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4659421A (en) * | 1981-10-02 | 1987-04-21 | Energy Materials Corporation | System for growth of single crystal materials with extreme uniformity in their structural and electrical properties |
JPH04139092A (ja) * | 1990-09-28 | 1992-05-13 | Fujitsu Ltd | シリコン単結晶の製造方法と種結晶 |
JP3235450B2 (ja) * | 1996-03-13 | 2001-12-04 | 住友金属工業株式会社 | 単結晶引き上げ用シリコン種結晶及び該シリコン種結晶を用いた単結晶引き上げ方法 |
JP2000128691A (ja) * | 1998-10-16 | 2000-05-09 | Shin Etsu Handotai Co Ltd | シリコン種結晶およびシリコン単結晶の製造方法 |
US6517632B2 (en) * | 2000-01-17 | 2003-02-11 | Toshiba Ceramics Co., Ltd. | Method of fabricating a single crystal ingot and method of fabricating a silicon wafer |
JP2002208596A (ja) * | 2001-01-09 | 2002-07-26 | Toshiba Ceramics Co Ltd | シリコン単結晶ウエハ |
US6866713B2 (en) * | 2001-10-26 | 2005-03-15 | Memc Electronic Materials, Inc. | Seed crystals for pulling single crystal silicon |
WO2004008521A1 (ja) * | 2002-07-17 | 2004-01-22 | Sumitomo Mitsubishi Silicon Corporation | 高抵抗シリコンウエーハ及びその製造方法 |
JP4215249B2 (ja) * | 2003-08-21 | 2009-01-28 | コバレントマテリアル株式会社 | シリコン種結晶およびシリコン単結晶の製造方法 |
US7396406B2 (en) * | 2004-02-09 | 2008-07-08 | Sumco Techxiv Corporation | Single crystal semiconductor manufacturing apparatus and method |
JP2007223814A (ja) * | 2004-02-09 | 2007-09-06 | Sumco Techxiv株式会社 | 単結晶半導体の製造方法 |
JP4336600B2 (ja) * | 2004-03-25 | 2009-09-30 | コバレントマテリアル株式会社 | シリコン単結晶引上用種結晶およびこれを用いたシリコン単結晶の製造方法 |
JP4507690B2 (ja) * | 2004-05-10 | 2010-07-21 | 信越半導体株式会社 | シリコン単結晶の製造方法及びシリコン単結晶 |
DE102005006186A1 (de) * | 2005-02-10 | 2006-08-24 | Siltronic Ag | Verfahren zur Herstellung eines Einkristalls aus Silizium mit kontrolliertem Kohlenstoffgehalt |
JP4604889B2 (ja) * | 2005-05-25 | 2011-01-05 | 株式会社Sumco | シリコンウェーハの製造方法、並びにシリコン単結晶育成方法 |
KR20130133884A (ko) * | 2006-01-20 | 2013-12-09 | 에이엠지 아이디얼캐스트 솔라 코포레이션 | 광전 변환 소자용 단결정 캐스트 실리콘 및 단결정 캐스트 실리콘 바디들을 제조하는 방법 및 장치 |
US20100089308A1 (en) * | 2008-10-15 | 2010-04-15 | Japan Super Quartz Corporation | Silica glass crucible and method for pulling single-crystal silicon |
US8163083B2 (en) * | 2008-07-09 | 2012-04-24 | Japan Super Quartz Corporation | Silica glass crucible and method for pulling up silicon single crystal using the same |
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2007
- 2007-09-07 JP JP2007232233A patent/JP5239265B2/ja active Active
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2008
- 2008-07-17 WO PCT/JP2008/062899 patent/WO2009031365A1/ja active Application Filing
- 2008-07-17 KR KR1020107005105A patent/KR101215433B1/ko active IP Right Grant
- 2008-07-17 EP EP08778241.3A patent/EP2186929A4/en not_active Ceased
- 2008-07-17 CN CN200880105838XA patent/CN101796225B/zh active Active
- 2008-07-17 US US12/676,634 patent/US20100242832A1/en not_active Abandoned
- 2008-08-13 TW TW097130839A patent/TWI395840B/zh active
Also Published As
Publication number | Publication date |
---|---|
WO2009031365A1 (ja) | 2009-03-12 |
TWI395840B (zh) | 2013-05-11 |
JP2009062233A (ja) | 2009-03-26 |
KR20100039447A (ko) | 2010-04-15 |
EP2186929A1 (en) | 2010-05-19 |
KR101215433B1 (ko) | 2012-12-26 |
TW200914651A (en) | 2009-04-01 |
US20100242832A1 (en) | 2010-09-30 |
CN101796225A (zh) | 2010-08-04 |
EP2186929A4 (en) | 2015-03-04 |
CN101796225B (zh) | 2013-10-30 |
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