JP4916090B2 - ドープiii−v族窒化物材料、ならびにそれを含む超小型電子デバイスおよびデバイス前駆体構造 - Google Patents
ドープiii−v族窒化物材料、ならびにそれを含む超小型電子デバイスおよびデバイス前駆体構造 Download PDFInfo
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- 239000000463 material Substances 0.000 title claims description 95
- 150000004767 nitrides Chemical class 0.000 title claims description 37
- 238000004377 microelectronic Methods 0.000 title claims description 21
- 239000002243 precursor Substances 0.000 title description 9
- 239000002019 doping agent Substances 0.000 claims description 59
- 239000000758 substrate Substances 0.000 claims description 16
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- 229910052594 sapphire Inorganic materials 0.000 claims description 10
- 239000010980 sapphire Substances 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 229910052749 magnesium Inorganic materials 0.000 claims description 6
- 229910052790 beryllium Inorganic materials 0.000 claims description 5
- 229910052791 calcium Inorganic materials 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 229910052700 potassium Inorganic materials 0.000 claims description 5
- 229910052706 scandium Inorganic materials 0.000 claims description 5
- 229910052708 sodium Inorganic materials 0.000 claims description 5
- 229910052712 strontium Inorganic materials 0.000 claims description 5
- 229910052725 zinc Inorganic materials 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052793 cadmium Inorganic materials 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- 229910052744 lithium Inorganic materials 0.000 claims description 4
- 229910052748 manganese Inorganic materials 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 229910052701 rubidium Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
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- 229910002704 AlGaN Inorganic materials 0.000 claims 6
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- 238000000034 method Methods 0.000 description 37
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- 229910002601 GaN Inorganic materials 0.000 description 36
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 34
- 239000012535 impurity Substances 0.000 description 25
- 230000008569 process Effects 0.000 description 25
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 23
- 229910045601 alloy Inorganic materials 0.000 description 22
- 239000000956 alloy Substances 0.000 description 22
- 229910052782 aluminium Inorganic materials 0.000 description 20
- 238000010586 diagram Methods 0.000 description 19
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- 238000006243 chemical reaction Methods 0.000 description 15
- 239000011777 magnesium Substances 0.000 description 15
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 13
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
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- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
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- MHYQBXJRURFKIN-UHFFFAOYSA-N C1(C=CC=C1)[Mg] Chemical compound C1(C=CC=C1)[Mg] MHYQBXJRURFKIN-UHFFFAOYSA-N 0.000 description 2
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
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- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- -1 MRS Nitride Chemical class 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
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- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
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- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
- H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
- H01L29/7784—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material with delta or planar doped donor layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
- H01L29/151—Compositional structures
- H01L29/152—Compositional structures with quantum effects only in vertical direction, i.e. layered structures with quantum effects solely resulting from vertical potential variation
- H01L29/155—Comprising only semiconductor materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
- H01L29/365—Planar doping, e.g. atomic-plane doping, delta-doping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
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- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
- Bipolar Transistors (AREA)
Description
発明の分野
本発明は、ドープIII−V族窒化物材料、例えば窒化アルミニウムガリウム(AlGaN)、窒化ガリウム(GaN)および窒化インジウムガリウム(InGaN)材料、このような材料の形成方法、ならびにこのような材料を含む超小型電子デバイスおよびデバイス前駆体構造に関する。
III−V族窒化物半導体は、そのワイドバンドギャップ、高熱伝導率および大きな降伏電界のため、高温、高周波数および高出力超小型電子工学ならびに紫外線/青/緑光電子工学において有用な材料として大きな可能性がある。
a)高キャリア移動度
b)広ドーピング範囲
c)低ドーパント活性エネルギー
d)高キャリア移動度および広ドーピング範囲の同時改善に関連する低抵抗率
e)特性a)〜d)の高再現性
f)ドーパント不純物を活性化する必要性の排除または代替的にドーパント活性化に必要な温度/時間の低減
g)不純物の組込みを通して生じる窒化物材料に対する活性区域変化の排除
h)ドーパント不純物の組込みに起因する窒化物材料に対する変化の最小化、および
i)ドープIII−V窒化物材料の性質、例えば抵抗率(上記(d)とは対照的に、ある用途においては抵抗率を上昇させるかまたは他の材料特性を変動させることが望ましい)を選択的に変動させる能力。
本発明は、ドープIII−V族窒化物材料、例えば窒化アルミニウムガリウム(AlGaN)、窒化インジウムガリウム(InGaN)および窒化ガリウム(GaN)材料、このような材料の形成方法、ならびにこのような材料を含む超小型電子デバイスおよびデバイス前駆体構造に関する。
ここに以下の参考文献のそれぞれ全体を本明細書に引用して援用する。ザオ(Zhao)ら著、応用物理レター(Applied Physics Letters)77巻(14)2000年10月2日、2195〜2197頁、キム(Kim)ら著、MRS窒化系半導体インターネット論文誌(MRS Internet Journal of Nitride Semiconductors)、Res4S1、G3.49(1999)、「オプトエレクトロニックおよびエレクトロニックデバイス用自立窒化(アルミニウム、インジウム、ガリウム)((Al、In、Ga)N)基板上で改善エピタキシ品質(表面テクスチャおよび欠陥密度)を達成するための方法(METHOD FOR ACHIEVING IMPROVED EPITAXY QUALITY (SURFACE TEXTURE AND DEFECT DENSITY) ON FREE−STANDING (ALUMINUM,INDIUM,GALLIUM) NITRIDE ((Al、In、Ga)N) SUBSTRATES FOR OPTO−ELECTRONIC AND ELECTRONIC DEVICES)」に対してジェフリーS.フリン(Jeffrey S.Flynn)らの名において2000年6月28日に出願された米国特許出願第09/605,195号明細書、「低欠陥密度(Al、In、Ga)Nおよびそれを作製するためのHVPEプロセス(LOW DEFECT DENSITY (Al、In、Ga)N AND HVPE PROCESS FOR MAKING SAME)」に対してロバートP.ボード(Robert P.Vaudo)らの名において1998年10月26日に出願された米国特許出願第09/179,049号明細書、および「(Ga,Al,In)Nベース層を用いたGaNベースデバイス(GaN−BASED DEVICES USING (Ga,Al,In)N BASED LAYERS)」に対してロバートP.ボード(Robert P.Vaudo)らの名において2000年12月5日に発行された米国特許第6,156,581号明細書。
従来のバルクドープ均一性は成長速度ならびに前駆体均一性、気相流均一性およびドーパント前駆体均一性の関数である。デルタドーピングにおいて、成長速度均一性変動を排除することにより、均一且つ再生可能なドーピング特性を達成する可能性を向上する。さらにドーピング均一性に影響を与える他の要因にはドーパント濃度、デルタドーピングプロセス条件およびデルタドーピング時間があるが、本明細書の開示に基づいて当該技術範囲内で容易に最適化して、格子内への所望の組込み速度をもたらすドーピング飽和条件を提供することができる。
母体格子に対するドーパント原子サイズの結果としてデルタドープ層と母体半導体マトリックスとの間に歪みがある場合、デルタドーピングレベルに依存するGaN材料系などのIII−V窒化物材料系での圧電効果は、デルタドープ構造およびそれを備えたデバイス構造を最適化する際に大きな役割を果たすことができる。デルタドープ層から得られる圧電特性の適正な技術のために、複数のタイプの不純物の組み合わせ(異なる格子サイズ、格子配置類似性および活性エネルギー)を、Si、Ge、Mg、C、O、Ca、Zn、Li、Mn、Na、K、Cd、Rb、Sr、ScおよびBeを含むデルタドープ層に採用することができる。さらに圧電特性のさらなる最適化は、デルタドープ層との混合AlInGaN四元合金を作ることにより達成することができる。
AlGaN HEMTのシート電荷は概して、AlGaNアルミニウム含有量を増加させるおよび/または厚さを増加させることにより対応して増加する歪みによって増加する。しかし1013cm−3程度の適度なシート電荷を達成するためには、一般にAlGaNバリア層の臨界厚さを超えなければならない。これにより緩和の可能性のある不安定なデバイス構造になる。この欠陥を排除する1つの方法は、チャネル領域(層14に最も近接した領域16)に高Al含有量を有するAlGaN層を用いて構造を成長させた後、それを徐々に研磨してチャネルから(層14/層16界面から)離間した低Al含有AlGaNにすることである。シート電荷を増加させる他の方法は、バリア層のバルクドーピングなどの従来の技術の利用があるが、バリア層の厚さを相当厚くするかまたはドーピングレベルを非常に高くして材料劣化しなければならない。
SiまたはMgなどのドーパント種でGaNおよびAlGaN層をバルクドーピングすると、デバイス構造の光ルミネセンス特性によって明らかであるようにさらに深いレベルが生じる。これらの深いレベルは、一般に、III−V族窒化物材料で重要なエネルギー出射および伝達用途において所望されるよりはるかに少ないエネルギーであるため、その結果これらの深いレベルは、エミッタに対して非常に低い光取出し効率と、検出器に対して非常に遅い応答性と、フィルタに対して非常に悪い光伝達をもたらす恐れがある。デルタドーピングは選択実質的単一層等価体積のドープ材料を提供するため、本発明においてデルタドーピングを採用してこれらの光学的活性欠陥の影響を軽減することができる。またデルタドーピングは、半導体のバンドギャップより低いエネルギーの光に対する層またはデバイス構造感度を低減するのに有用であるため、対応する半導体デバイスのノイズ特性の改善をもたらす。
前述の段落において説明したように、GaNおよびAlGaNなどのIII−V窒化物材料のバルクドーピングは材料内に深いレベルを生じる。デルタドーピングを利用してこれらの深いレベルを含むデバイス層の断面(体積)を低減することは、温度安定性、寿命、リークおよび降伏特性を始めとするデバイス特性の大幅な改善をもたらすことになる。
デルタドープ層をデバイス内のその配置と関連して設計することにより、例えば、デルタドープコンタクト層、分離層および配線層のデバイス構造内での設置を始めとする改善デバイス製造を可能にする。例えば、デルタドープコンタクト層をHEMTデバイス構造(領域16)の上部付近に配置して、ソースまたはドレインコンタクトのオーミック接触動作を改善することができる。その結果得られるデバイスは、注入エネルギーおよび時間が低減されるため、等価抵抗率のバルクドープ層より注入分離により容易且つ再現可能に分離されることになる。その結果、注入量および注入損傷が大幅に低減することにより、分離、降伏およびリーク特性を始めとする改善デバイス特性をもたらすことになる(図26および27)。
a)コンタクトおよび分離構造
b)高周波AlGaN FETまたはHEMT
c)一般的なデルタドープ構造および光学的機能
d)光電トランジスタ検出構造
e)トンネルドープ構造
f)デルタドープベースHBT(NPN)
g)光学フィルタ
h)検出器
超格子構造は、合金組成が材料厚さまたは材料厚さの一部分にわたって規則的または周期的に変化する構造である。合金組成は通常2つの組成間で変化し、その変化は通常急峻であり、さらに合金組成のその変化は、通例、図7に示すようにバンドギャップの変化をもたらす。急峻度は用いたデバイス製造技術の結果である。原則的に、超格子は図8に示すように3つ以上の合金を有することも可能であるが、説明を容易にするため超格子構造は以下に2つの領域、以下領域1および領域2として表示する領域を有するものとして例示的に説明する。
デルタドープHEMTデバイス構造
サファイア基板をH2雰囲気で、100mbarの圧力で10分間1170℃に加熱した。デルタドーピング構造成長の他の部分に対して圧力を一定にした状態で、反応物を500℃まで冷却するとともに、低温AlN核生成バッファを従来の方法で堆積した。バッファ層をサファイア基板上に堆積した後、2.5slmのNH3および20slmのH2下で1220℃のサセプタ温度まで反応物を加熱して、温度を2分間安定させた。
デルタドープ超格子構造
サファイア基板をH2雰囲気で、100mbarの圧力で10分間1170℃に加熱した。デルタドーピング構造成長の他の部分に対して圧力を一定にした状態で、反応物を500℃まで冷却するとともに、低温AlN核生成バッファを従来の方法で堆積した。バッファ層をサファイア基板上に堆積した後、2.5slmのNH3および20slmのH2の流量下で1220℃まで基板を加熱して、温度を2分間安定させた。
光電陰極構造
サファイア基板をH2周囲雰囲気で、100mbarの圧力で10分間1170℃に加熱した。デルタドーピング構造成長の他の部分に対して圧力を一定にした状態で、反応物を500℃まで冷却するとともに、低温AlN核生成バッファを従来の方法で堆積した。AlNのバッファ層をサファイア基板上に堆積した後、2.5slmのNH3および20slmのH2の流量下で1220℃のサセプタ温度まで基板を加熱して、温度を2分間安定させた。トリメチルガリウム(TMG)およびトリメチルアルミニウム(TMA)を反応物に導入してAl0.3Ga0.7N層を成長させた。その後反応物へのTMGおよびTMAを止めることによりプレポーズステップを開始して、界面は1220℃のサセプタ温度でNH3およびH2周囲雰囲気下に置いた。プレポーズは10秒続いた。プレポーズステップの後、ビス−シクロペンタジエニルマグネシウム(Cp2Mg)を反応物内に75秒間導入してデルタドーピングを提供することによりポーズステップが開始された。ポーズテップの後、反応物へのCp2Mgを止めると同時に、デルタドーピングステップの前にAlGaN膜の堆積に用いたものと同じプロセス条件で反応物へTMAおよびTMGを出すことによりポストポーズステップを開始して、さらに厚くAl0.3Ga0.7Nを成長させた。その後TMAフラックスを変えることによりAlGaN膜の化学量論を変化させて、Al0.15Ga0.85N層を作製した。その後トリメチルアルミニウム(TMA)フラックスを増加させてAl0.3Ga0.7N層を成長させた。最後にこの構造にMgバルクドープGaN層を被せた。これらの構造内でのGaNおよびAlGaN層に対してV/III比はおよそ2500であった。反応物へのTMGおよびTMAを止めることにより材料の成長を止めるとともに、成長した材料をNH3およびH2過剰圧力下で500℃未満に冷却し、反応物圧力を900mbarの圧力まで傾斜させて、光電陰極構造を完成させた。
Claims (11)
- 高電子移動度トランジスタ(HEMT)を含む、III−V族窒化物超小型電子デバイス構造であって、
小さなバンドギャップを有するIII−V族窒化物材料を含むチャネル層と、
前記チャネル層に隣接して配置され、前記チャネル層の小さなバンドギャップよりも大きなバンドギャップを有するIII−V族窒化物材料を含み、そして、この大きなバンドギャップ材料内にデルタドープ層を有するバリア層と、
を含有し、
前記バリア層は、前記デルタドープ層を有することを除いて実質的に均質であり、
前記大きなバンドギャップ材料と前記小さいバンドギャップ材料の組み合わせは、両者間の界面に沿ってチャネルを形成するように配置され、前記デルタドープ層は前記チャネル層から30オングストロームと等しいかこれより小さいゼロでない距離だけ離間している、デバイス構造。 - 前記バリア層は、前記デルタドープ層の存在以外では非ドープである、請求項1に記載の超小型電子デバイス構造。
- 前記バリア層は、非ドープAlGaNを含む、請求項2に記載の超小型電子デバイス構造。
- 前記チャネル層は、非ドープGaNを含む、請求項1に記載の超小型電子デバイス構造。
- 前記デルタドープ層は、Si、Ge、Mg、C、O、Ca、Zn、Li、Mn、Na、K、Cd、Rb、Sr、ScおよびBeからなる群から選択された少なくとも1つのドーパント種を含む、請求項1に記載の超小型電子デバイス構造。
- 前記高電子移動度トランジスタは、AlGaN/GaN高電子移動度トランジスタであり、前記チャネル層はGaNを含み、前記バリア層はAlGaNを含む、請求項1に記載の超小型電子デバイス構造。
- 前記デルタドープ層は、前記AlGaN/GaN高電子移動度トランジスタの前記バリア層内で、前記デルタドープ層とチャネル層とが前記デバイス構造の動作における電荷キャリアのトンネル距離未満の距離だけ離間するような前記トランジスタの前記チャネル層に対する位置に配置される、請求項6に記載の超小型電子デバイス構造。
- 前記デルタドープ層は、シリコンを含む、請求項1に記載の超小型電子デバイス構造。
- サファイア基板と、該基板上のAlNバッファ層と、該AlNバッファ層上のGaN層と、該GaN層上のAlGaN層とを含み、該AlGaN層は内部にデルタドープ層を有し、該AlGaN層は前記デルタドープ層を有することを除いて実質的に均質であり、そして、前記デルタドープ層は前記GaN層から30オングストロームと等しいかこれより小さいゼロでない距離だけ離間している、HEMTデバイス。
- 前記デルタドープ層は、Si、Ge、Mg、C、O、Ca、Zn、Li、Mn、Na、K、Cd、Rd、Sr、ScおよびBeからなる群から選択されたドーパントを含む、請求項9に記載のHEMTデバイス。
- 前記デルタドープ層は、シリコンドーパントを含む、請求項9に記載のHEMTデバイス。
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- 2003-03-19 AU AU2003224709A patent/AU2003224709A1/en not_active Abandoned
- 2003-03-19 JP JP2003581267A patent/JP4916090B2/ja not_active Expired - Lifetime
- 2003-03-19 EP EP03721392A patent/EP1488460B1/en not_active Expired - Lifetime
- 2003-03-19 CN CNB038071312A patent/CN100375292C/zh not_active Expired - Lifetime
- 2003-03-19 CA CA002479657A patent/CA2479657A1/en not_active Abandoned
- 2003-03-19 KR KR10-2004-7015208A patent/KR20040104959A/ko active Search and Examination
- 2003-03-19 WO PCT/US2003/008355 patent/WO2003083950A1/en active Application Filing
- 2003-03-25 TW TW092106607A patent/TW200306016A/zh unknown
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
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EP0841704A1 (en) * | 1996-11-07 | 1998-05-13 | Paul-Drude-Institut für Festkörperelektronik | Semiconductor transistor device and method of manufacturing the same |
JPH10284507A (ja) * | 1997-04-04 | 1998-10-23 | Matsushita Electric Ind Co Ltd | 半導体装置 |
JP2000138368A (ja) * | 1998-10-29 | 2000-05-16 | Hitachi Cable Ltd | Iii−v族化合物半導体の気相成長方法及び高電子移動度トランジスタの製造方法 |
JP2000323704A (ja) * | 1999-05-13 | 2000-11-24 | Nippon Telegr & Teleph Corp <Ntt> | 電界効果トランジスタ |
JP2001077353A (ja) * | 1999-06-30 | 2001-03-23 | Toshiba Corp | 高電子移動度トランジスタ及び電力増幅器 |
JP2001274375A (ja) * | 2000-03-28 | 2001-10-05 | Nec Corp | ヘテロ接合電界効果トランジスタ |
JP2001284576A (ja) * | 2000-03-30 | 2001-10-12 | Toshiba Corp | 高電子移動度トランジスタ及びその製造方法 |
EP1172859A2 (en) * | 2000-07-14 | 2002-01-16 | TRW Inc. | Partially relaxed channel HEMT device |
Also Published As
Publication number | Publication date |
---|---|
TW200306016A (en) | 2003-11-01 |
CN100375292C (zh) | 2008-03-12 |
US7919791B2 (en) | 2011-04-05 |
EP1488460A4 (en) | 2008-02-20 |
US20030178633A1 (en) | 2003-09-25 |
WO2003083950A1 (en) | 2003-10-09 |
JP2005526384A (ja) | 2005-09-02 |
EP1488460B1 (en) | 2013-01-02 |
CN1643696A (zh) | 2005-07-20 |
EP1488460A1 (en) | 2004-12-22 |
AU2003224709A1 (en) | 2003-10-13 |
CA2479657A1 (en) | 2003-10-09 |
KR20040104959A (ko) | 2004-12-13 |
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