CN100438083C - δ掺杂4H-SiC PIN结构紫外光电探测器及其制备方法 - Google Patents
δ掺杂4H-SiC PIN结构紫外光电探测器及其制备方法 Download PDFInfo
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- CN100438083C CN100438083C CNB2006101353720A CN200610135372A CN100438083C CN 100438083 C CN100438083 C CN 100438083C CN B2006101353720 A CNB2006101353720 A CN B2006101353720A CN 200610135372 A CN200610135372 A CN 200610135372A CN 100438083 C CN100438083 C CN 100438083C
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CNB2006101353720A CN100438083C (zh) | 2006-12-23 | 2006-12-23 | δ掺杂4H-SiC PIN结构紫外光电探测器及其制备方法 |
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CNB2006101353720A CN100438083C (zh) | 2006-12-23 | 2006-12-23 | δ掺杂4H-SiC PIN结构紫外光电探测器及其制备方法 |
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CN101000936A CN101000936A (zh) | 2007-07-18 |
CN100438083C true CN100438083C (zh) | 2008-11-26 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2790061C1 (ru) * | 2022-06-08 | 2023-02-14 | Акционерное общество "НПО "Орион" | Способ изготовления двухспектрального фоточувствительного элемента на основе барьера Шоттки |
Families Citing this family (16)
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---|---|---|---|---|
US8373176B2 (en) * | 2008-04-15 | 2013-02-12 | Sumitomo Electric Industries, Ltd. | Semiconductor device and method of manufacturing the same |
WO2010131569A1 (ja) * | 2009-05-11 | 2010-11-18 | 住友電気工業株式会社 | 半導体基板の製造方法 |
CN102064187B (zh) * | 2009-11-11 | 2013-02-13 | 中国科学院半导体研究所 | 一种碳化硅同质pin微结构材料及其制作方法 |
CN102651422A (zh) * | 2011-10-10 | 2012-08-29 | 京东方科技集团股份有限公司 | 短波长光探测器及其制造方法 |
US20150153524A1 (en) * | 2013-12-03 | 2015-06-04 | Forelux Inc. | Integrated optoelectronic module |
CN104576825A (zh) * | 2014-12-03 | 2015-04-29 | 吴正云 | 一种抑制SiC紫外光电探测器暗电流方法 |
CN104576325B (zh) * | 2015-01-27 | 2017-07-21 | 株洲南车时代电气股份有限公司 | 一种制作碳化硅sbd器件的方法及其正面保护方法 |
CN107154447B (zh) * | 2017-05-24 | 2024-01-30 | 中国电子科技集团公司第十三研究所 | 一种硅基探测器及其制备方法 |
CN107993934B (zh) * | 2017-12-08 | 2020-09-11 | 中国科学院微电子研究所 | 增强氧化镓半导体器件欧姆接触的方法 |
CN108400197B (zh) * | 2018-04-28 | 2020-03-17 | 厦门大学 | 具有球冠结构的4H-SiC紫外光电探测器及制备方法 |
CN110428922A (zh) * | 2018-06-08 | 2019-11-08 | 吉林大学 | 一种基于碳化硅PIN结型β辐射伏特效应核电池 |
CN109256437B (zh) * | 2018-09-29 | 2024-01-26 | 镇江镓芯光电科技有限公司 | 一种低温键合光电探测器及其制备方法 |
CN109301024A (zh) * | 2018-09-29 | 2019-02-01 | 镇江镓芯光电科技有限公司 | 一种新型p-i-n紫外光电二极管及其制备方法 |
CN109935655B (zh) * | 2019-04-03 | 2024-02-06 | 南京紫科光电科技有限公司 | 一种AlGaN/SiC双色紫外探测器 |
CN111463308B (zh) * | 2020-05-13 | 2021-09-07 | 厦门大学 | 一种碳化硅同轴紫外光电探测器及其制备方法 |
CN116154030B (zh) * | 2023-03-06 | 2024-04-30 | 厦门大学 | 极紫外至紫外波段的碳化硅雪崩光电探测器及其制备方法 |
Citations (4)
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US5557133A (en) * | 1994-05-12 | 1996-09-17 | Universita Degli Studi Di Roma "La Sapienza" | Voltage-controlled variable spectrum photodetector for 2D color image detection and reconstruction applications |
US20020070389A1 (en) * | 2000-12-08 | 2002-06-13 | Song Jong In | Photodetector utilizing a HEMTstructure |
EP1306890A2 (en) * | 2001-10-25 | 2003-05-02 | Matsushita Electric Industrial Co., Ltd. | Semiconductor substrate and device comprising SiC and method for fabricating the same |
CN1643696A (zh) * | 2002-03-25 | 2005-07-20 | 克利公司 | 掺杂型iii-v族氮化物材料及由这种材料构成的微电子器件和器件前体结构 |
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2006
- 2006-12-23 CN CNB2006101353720A patent/CN100438083C/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5557133A (en) * | 1994-05-12 | 1996-09-17 | Universita Degli Studi Di Roma "La Sapienza" | Voltage-controlled variable spectrum photodetector for 2D color image detection and reconstruction applications |
US20020070389A1 (en) * | 2000-12-08 | 2002-06-13 | Song Jong In | Photodetector utilizing a HEMTstructure |
EP1306890A2 (en) * | 2001-10-25 | 2003-05-02 | Matsushita Electric Industrial Co., Ltd. | Semiconductor substrate and device comprising SiC and method for fabricating the same |
CN1643696A (zh) * | 2002-03-25 | 2005-07-20 | 克利公司 | 掺杂型iii-v族氮化物材料及由这种材料构成的微电子器件和器件前体结构 |
Non-Patent Citations (2)
Title |
---|
金属-半导体-金属(MSM)结构4H-SiC紫外光电探测器的研制. 吴正云等.量子电子学报,第21卷第2期. 2004 |
金属-半导体-金属(MSM)结构4H-SiC紫外光电探测器的研制. 吴正云等.量子电子学报,第21卷第2期. 2004 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2790061C1 (ru) * | 2022-06-08 | 2023-02-14 | Акционерное общество "НПО "Орион" | Способ изготовления двухспектрального фоточувствительного элемента на основе барьера Шоттки |
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