CN100435281C - 制备GaN基稀磁半导体材料的方法 - Google Patents
制备GaN基稀磁半导体材料的方法 Download PDFInfo
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- CN100435281C CN100435281C CNB2006100013011A CN200610001301A CN100435281C CN 100435281 C CN100435281 C CN 100435281C CN B2006100013011 A CNB2006100013011 A CN B2006100013011A CN 200610001301 A CN200610001301 A CN 200610001301A CN 100435281 C CN100435281 C CN 100435281C
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- 239000000463 material Substances 0.000 title claims abstract description 40
- 239000004065 semiconductor Substances 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 title claims abstract description 17
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 22
- 230000012010 growth Effects 0.000 claims abstract description 22
- 229910052723 transition metal Inorganic materials 0.000 claims abstract description 9
- 150000003624 transition metals Chemical class 0.000 claims abstract description 9
- 230000007704 transition Effects 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims description 27
- 239000011572 manganese Substances 0.000 claims description 14
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- 229910052748 manganese Inorganic materials 0.000 claims description 8
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 7
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 6
- 229910021529 ammonia Inorganic materials 0.000 claims description 6
- 239000011651 chromium Substances 0.000 claims description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000012159 carrier gas Substances 0.000 claims description 2
- 229910017052 cobalt Inorganic materials 0.000 claims description 2
- 239000010941 cobalt Substances 0.000 claims description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 claims description 2
- 238000007562 laser obscuration time method Methods 0.000 claims 1
- 238000009987 spinning Methods 0.000 abstract 2
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 7
- 238000011160 research Methods 0.000 description 5
- 238000000407 epitaxy Methods 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000013256 coordination polymer Substances 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 208000035126 Facies Diseases 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000005307 ferromagnetism Effects 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 230000005469 synchrotron radiation Effects 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- RBVYPNHAAJQXIW-UHFFFAOYSA-N azanylidynemanganese Chemical compound [N].[Mn] RBVYPNHAAJQXIW-UHFFFAOYSA-N 0.000 description 1
- ILZSSCVGGYJLOG-UHFFFAOYSA-N cobaltocene Chemical compound [Co+2].C=1C=C[CH-]C=1.C=1C=C[CH-]C=1 ILZSSCVGGYJLOG-UHFFFAOYSA-N 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- KTWOOEGAPBSYNW-UHFFFAOYSA-N ferrocene Chemical compound [Fe+2].C=1C=C[CH-]C=1.C=1C=C[CH-]C=1 KTWOOEGAPBSYNW-UHFFFAOYSA-N 0.000 description 1
- VFLRPJJARDQRAC-UHFFFAOYSA-N gallium manganese Chemical compound [Mn].[Ga] VFLRPJJARDQRAC-UHFFFAOYSA-N 0.000 description 1
- 230000007773 growth pattern Effects 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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CNB2006100013011A CN100435281C (zh) | 2006-01-17 | 2006-01-17 | 制备GaN基稀磁半导体材料的方法 |
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CNB2006100013011A CN100435281C (zh) | 2006-01-17 | 2006-01-17 | 制备GaN基稀磁半导体材料的方法 |
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CN1822320A CN1822320A (zh) | 2006-08-23 |
CN100435281C true CN100435281C (zh) | 2008-11-19 |
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CNB2006100013011A Expired - Fee Related CN100435281C (zh) | 2006-01-17 | 2006-01-17 | 制备GaN基稀磁半导体材料的方法 |
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Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101319400B (zh) * | 2008-05-19 | 2012-07-04 | 南京大学 | 一种Fe掺杂生长GaFeN稀释磁性半导体的方法及其用途 |
CN101899706B (zh) * | 2010-06-09 | 2012-05-30 | 中国科学院半导体研究所 | 采用MOCVD制备非极性GaN基稀磁半导体材料的方法 |
CN107025971B (zh) * | 2017-05-11 | 2019-02-01 | 电子科技大学 | 具有室温铁磁性的稀磁半导体材料及其制备方法和用途 |
IT201900006410A1 (it) | 2019-04-29 | 2019-07-29 | Tommaso Intini | Sistema di interazione elettromagnetica per la trasmissione di energia senza fili, generante uno stato di benessere immediato tramite accessori e dispositivi di biomagnetismo frequenziato |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1289866A (zh) * | 1999-09-28 | 2001-04-04 | 中国科学院半导体研究所 | 一种生长氮化镓及其化合物薄膜的方法 |
CN1388537A (zh) * | 2002-05-31 | 2003-01-01 | 南京大学 | 离子注入法制备GaN基稀释磁性半导体材料的方法 |
CN1545132A (zh) * | 2003-11-26 | 2004-11-10 | �Ϻ���ͨ��ѧ | 利用氢化物气相外延制备GaMnN铁磁性薄膜的方法 |
CN1643696A (zh) * | 2002-03-25 | 2005-07-20 | 克利公司 | 掺杂型iii-v族氮化物材料及由这种材料构成的微电子器件和器件前体结构 |
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- 2006-01-17 CN CNB2006100013011A patent/CN100435281C/zh not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1289866A (zh) * | 1999-09-28 | 2001-04-04 | 中国科学院半导体研究所 | 一种生长氮化镓及其化合物薄膜的方法 |
CN1643696A (zh) * | 2002-03-25 | 2005-07-20 | 克利公司 | 掺杂型iii-v族氮化物材料及由这种材料构成的微电子器件和器件前体结构 |
CN1388537A (zh) * | 2002-05-31 | 2003-01-01 | 南京大学 | 离子注入法制备GaN基稀释磁性半导体材料的方法 |
CN1545132A (zh) * | 2003-11-26 | 2004-11-10 | �Ϻ���ͨ��ѧ | 利用氢化物气相外延制备GaMnN铁磁性薄膜的方法 |
Non-Patent Citations (2)
Title |
---|
Room temperature ferromagnetic properties of (Ga,Mn)N. M.L.Reed,N.A.EI-Masry,H.H.Stademaier,M.K.Ritums,M.J.Reed.APPLIED PHYSICS LETTERS,Vol.79 No.21. 2001 |
Room temperature ferromagnetic properties of (Ga,Mn)N. M.L.Reed,N.A.EI-Masry,H.H.Stademaier,M.K.Ritums,M.J.Reed.APPLIED PHYSICS LETTERS,Vol.79 No.21. 2001 * |
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CN1822320A (zh) | 2006-08-23 |
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