JP4859996B1 - 金属配線形成用の転写基板による金属配線の形成方法 - Google Patents

金属配線形成用の転写基板による金属配線の形成方法 Download PDF

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JP4859996B1
JP4859996B1 JP2010263135A JP2010263135A JP4859996B1 JP 4859996 B1 JP4859996 B1 JP 4859996B1 JP 2010263135 A JP2010263135 A JP 2010263135A JP 2010263135 A JP2010263135 A JP 2010263135A JP 4859996 B1 JP4859996 B1 JP 4859996B1
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Prior art keywords
metal wiring
metal
transfer
substrate
wiring material
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JP2012114310A (ja
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俊典 小柏
昌昭 栗田
尚 西森
幸男 兼平
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Tanaka Kikinzoku Kogyo KK
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Tanaka Kikinzoku Kogyo KK
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Priority to JP2010263135A priority Critical patent/JP4859996B1/ja
Application filed by Tanaka Kikinzoku Kogyo KK filed Critical Tanaka Kikinzoku Kogyo KK
Priority to US13/879,803 priority patent/US8912088B2/en
Priority to KR1020137013880A priority patent/KR101380002B1/ko
Priority to PCT/JP2011/076628 priority patent/WO2012070480A1/ja
Priority to CN201180056766.6A priority patent/CN103262227B/zh
Priority to EP11843493.5A priority patent/EP2645409B1/en
Priority to TW100143260A priority patent/TWI462151B/zh
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Publication of JP4859996B1 publication Critical patent/JP4859996B1/ja
Publication of JP2012114310A publication Critical patent/JP2012114310A/ja
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    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4885—Wire-like parts or pins
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Abstract


【課題】転写法により被転写物に金属配線を形成するための転写用基板であって、被転写物側の加熱温度を低くすることのできるもの、及び、金属配線の形成方法を提供する
【解決手段】本発明は、基板と、前記基板上に形成された少なくとも一つの金属配線素材と、前記基板と前記金属配線素材との間に形成された下地金属膜とからなり、前記金属配線素材を被転写物に転写させるための転写用基板であって、前記金属配線素材は、純度９９．９重量％以上、平均粒径０．０１μｍ〜１．０μｍである金粉等を焼結してなる成形体であり、前記下地金属膜は、金等の金属又は合金等からなる転写用基板である。この転写用基板は、被転写物の加熱温度を８０〜３００℃としても金属配線素材を被転写物に転写することができる。
【選択図】図１

Description

本発明は、半導体ウェハ、化合物ウェハ、ＭＥＭＳウェハ等の被転写物上へ金属配線を形成するための転写用基板及びこれを利用する金属配線方法に関する。
半導体チップ等の電子部品の実装密度の高密度化に伴い、その実装方法は旧来のワイヤボンディング法から、フリップチップボンディング法などといった回路基板に半導体チップを直付けする方法が主流となってきている。この実装方法では、半導体ウェハ等の外部端子取り出し電極部バンプ（突起電極）で構成される金属配線を形成し、これを基板上へフェイスダウンボンディングするものである。
従来、ウェハ上へのバンプ形成の方法としては、めっき法を用いるものが一般的であった。めっき法により形成されるバンプは、緻密で良好な電気伝導特性を有することから電極として有用であると考えられている。しかし、めっき法によるバンプ形成は、今後より進行すると考えられる金属配線の微細化に十分に対応できないとの懸念がある。そこで、特許文献１のような転写基板を用いた転写法によるバンプ形成法が提案されている。
特開平５−１４４８７０号公報
この転写によるバンプ形成法は、予めガラス等の基板にバンプとなる配線素材を形成した転写用基板を作製し、これをウェハに被せて加圧、加熱して配線素材をウェハに転写させバンプを形成する方法である。この方法は、加圧、加熱の制御により転写用基板上の任意の配線素材を、ウェハの任意の位置に転写することができ、金属配線の微細化を可能とすると共に、ウェハ上の不良セクタへの配線形成を回避することができ素材の無駄も回避することができる。
ところで、これまでの転写法によるバンプ形成では、転写用基板からウェハへのバンプの転写の際、ウェハ側の加熱温度と転写基板側の加熱温度に比較的温度差がある。具体的には、ウェハ側の加熱温度は３００〜４００℃としつつ、転写基板側の加熱温度は１００〜２００℃としている。そして、この設定温度及び温度差が転写基板の変形（そり）の要因となる。即ち、転写基板はガラスが適用されることが多く、その加熱温度が２００℃を超えると変形のおそれがある。このとき、転写基板の加熱温度自体を多少低く設定しても、ウェハ側の加熱温度が高いとバンプを介した伝熱によりガラス基板の温度上昇が懸念される。
また、バンプの転写のためにウェハ側の温度を高温にすることは、ウェハ上に半導体回路が形成されている場合において、回路へのダメージが懸念される。よって、本来、バンプ転写時の加熱温度は低い方が好ましいのであるが、ウェハ側の加熱温度を安易に下げることはできない。これは、転写用基板上のバンプは、一般にめっき法で形成されるが、めっきで形成されるバンプをウェハに転写させるためには、ウェハとバンプとの間に十分な接合を生させる必要があり、そのためには高温加熱が必要だからである。
そこで本発明は、転写法によりウェハ等の被転写物上に金属配線を形成するための転写用基板について、被転写物側の加熱温度を従来よりも低くすることのできるものを提供する。また、この転写用基板を用いた、金属配線の形成方法についても開示する。
本発明者等は、上記課題を解決すべく、被転写物に対して低温でも転写可能となる構成を有する金属配線素材を備える転写用基板を見出すべく、本発明者等の有する技術的知見を考慮して検討を行った。そして、高純度であり、微細粒径の金属粉末を焼結してなる成形体は、比較的低温でも被転写物に接合可能であること、及び、それが金属配線として機能することを見出し本発明に想到した。
即ち、本発明は、基板と、前記基板上に形成された少なくとも一つの金属配線素材と、前記基板と前記金属配線素材との間に形成された下地金属膜とからなり、前記金属配線素材を被転写物に転写させるための転写用基板であって、前記金属配線素材は、純度９９．９重量％以上、平均粒径０．０１μｍ〜１．０μｍである金粉、銀粉、白金粉、パラジウム粉、銅粉から選択される一種以上の金属粉末を焼結してなる成形体であり、前記下地金属膜は、金、銀、白金、パラジウム、ルテニウム、ロジウム、イリジウム、クロム、チタン、タングステン、タンタル、ニッケル、銅、ジルコニウムの何れかの金属又はこれらの合金若しくはこれらの金属の酸化物からなる転写用基板である。
以下、本発明につき詳細に説明する。上記の通り、本発明に係る転写用基板は、被転写物（ウェハ）に転写させる金属配線素材（バンプ）として、所定の金属粉末を焼結して形成した焼結体を適用することを特徴とする。この焼結体からなる金属配線素材は、従来技術のめっきにより形成される緻密なものとは相違して多孔質であり、転写時において被転写物表面と点接触で接する。本発明者等によれば、この多孔質が形成する点接触状態により、被転写物面との接合に要する温度を低減することができると考える。そして、これにより転写時の被転写物側の温度を従来よりも低い温度（３００℃以下）にすることができる。
この焼結体からなる金属配線素材について、焼結する金属粉末の純度、粒径の金属を規定するのは、純度については、転写後のバンプとしたときの導電性を考慮するものである。つまり、純度が９９．９重量％未満であると必要な通電性を確保できないおそれがあるからである。また、金属粉末の粒径については、１．０μｍを超える粒径の金属粉では、成形体に大きな隙間が生じ易くなり、最終的に必要な通電性を確保できないからである。尚、金属粉末の粒径は細かいことが好ましいが０．０１μｍ未満の粒径の粉末は取扱い性に劣ることから、０．０１μｍを下限とする。
この焼結体からなる金属配線素材は、多孔質であるが、その密度は金属粉の密度の０.４５〜０．９５倍となっているものが好ましい。焼結を進行させると金属配線素材は緻密なものとなり、その密度はバルク体である金属の密度に近似する。バルク金属の密度の０．９５倍を超える金属配線素材は硬すぎるため、転写が困難となる。一方、バルク金属の０．４５倍未満となると、金属粉同士の接触が不十分となり導電性に乏しく、金属配線として好ましくない。
また、金属配線素材は金粉、銀粉、白金粉、パラジウム粉、銅粉、又は、これら金属の合金粉より構成させる。バンプとしての導電性を考慮したものである。金属配線素材は、これらの金属粉末の１種類のみを焼結したものでも良いが、２種以上を混合しても良い。例えば、金粉を単独で焼結しても良いが、金粉とパラジウム粉とを混合する、金粉と銀粉とを混合する等してこれを焼結しても良い。
そして、上記金属配線素材は、基板に直接形成されることはなく、基板と金属配線素材との間には、下地金属膜が形成される。基板にはガラス基板を用いることが多くなるが、ガラスは金属との接合性に乏しく、直接金属配線素材を形成すると、転写用基板の取扱い時に脱落するおそれがある。そこで、金属配線素材の密着性確保のため下地金属膜を形成する。この下地金属膜は、金、銀、白金、パラジウム、ルテニウム、ロジウム、イリジウム、クロム、チタン、タングステン、タンタル、ニッケル、銅、ジルコニウムの何れかの金属又は合金又はこれらの金属の酸化物からなる。
この下地金属膜は、金属配線素材と同じ組成の金属であっても良いが、相違する組成の金属膜であることがより好ましい。金属配線素材と同一の組成とすると、金属配線素材と下地金属膜との密着性が高くなり、被転写物への転写時に金属配線素材が基板に残留するおそれがある。但し、下地金属膜と金属配線素材とを同一の組成で構成しても、転写時の加熱条件の調整等により金属配線素材と被転写物との密着性を高くし、残留を回避することができることから、必ずしも組成を異にすることが要求されるものではない。
下地金属膜は、厚さ１〜１００ｎｍとするのが好ましい。１ｎｍ未満では、下地金属膜と基板との密着性が低く、金属配線素材の密着性を確保することができない。また、上限については特に制限はないが、１００ｎｍを超える厚さにしても効果に相違はない。そして、上記の範囲内で下地金属膜の厚さを調整することで、金属配線素材の転写率の調整を行うことができる。これは、下地金属膜と金属配線素材とが同じ材質の場合（例えば、ガラス基板に下地金属膜としてＡｕを、金属配線素材としてＡｕ粉末を用いた場合）、下地金属膜と金属配線素材との密着性が高くなるため、下地金属膜の厚さを薄くすることで、転写時に下地金属膜を基板から剥離させることができる。この下地金属膜を薄くして、転写時に剥離させる方法は、下地金属膜を厚くする場合よりも、金属配線素材の残留を抑制することができる場合があるため効果的な転写率の調整となる。このように転写時の剥離を狙って下地金属膜を薄くする場合、その厚さは金属配線素材を構成する金属粉末の平均粒子径の１／３以下とするのが好ましい。
尚、下地金属膜は、単層でも良いが複数層形成しても良い。例えば、ガラス基板にはチタン膜を形成し、その上に金膜を形成しても良い。また、このような多層膜を熱処理してチタンを最表面に拡散させると共に酸化させ酸化物を形成しても良い。
金属配線素材を形成する基板は、材質としては、ガラス或いは樹脂補強されたガラスが一般的であるが、その他、シリコン、コバール等の金属も適用できる。また、その厚さも特に制限はないが、取扱い性や転写の安定性を考慮して５０〜５００μｍとするのが好ましい。
本発明に係る転写用基板の製造工程としては、ガラス等の基板に対し、下地金属膜を形成し、その後金属配線素材の形成を行う。下地金属膜の形成は、スパッタリング法、めっき法、ＣＶＤ法等の各種の薄膜製造プロセスが適用できる。
一方、金属配線素材の形成について、これまで述べたように、本発明においては、金属粉を焼結して金属配線素材を形成する。この金属粉からなる金属配線素材の形成にあたっては、金属粉に適宜に有機溶剤を添加した金属ペーストを用いて成形することが好ましい。ペーストは、後述するように多様な方法で塗布可能であり、また、配線の微細化にも対応できるからである。
金属ペーストの有機溶剤としては、エステルアルコール、ターピネオール、パインオイル、ブチルカルビトールアセテート、ブチルカルビトール、カルビトールが好ましい。例えば、好ましいエステルアルコール系の有機溶剤として、２，２，４−トリメチル−３−ヒドロキシペンタイソブチレート（Ｃ１２Ｈ２４Ｏ３）を挙げることができる。本溶剤は、比較的低温で乾燥させることができるからである。
また、上記有機溶剤に加えて、金属ペーストは、アクリル系樹脂、セルロース系樹脂、アルキッド樹脂から選択される一種以上を含有していても良い。これらの樹脂等を更に加えると金属ペースト中の金属粉の凝集が防止されてより均質となり、偏りのないバンプが形成できる。尚、アクリル系樹脂としては、メタクリル酸メチル重合体を、セルロース系樹脂としては、エチルセルロースを、アルキッド樹脂としては、無水フタル酸樹脂を、それぞれ挙げることができる。そして、これらの中でも特にエチルセルロースが好ましい。
金属ペーストの塗布工程は特に限られるものはなく、例えば、バンプ形状の型を基板上に載置し、これに金属ペーストを充填しても良い。また、従来のめっき法によるバンプ形成と同様、レジストを使用しても良い。金属ペーストの塗布方法としては、スピンコート法、スクリーン印刷法、インクジェット法、滴下したペーストをシリコンゴム製のへらで広げることで孔内に充填する方法等、種々の方法を用いることができる。
金属ペースト塗布後は、金属ペーストを塗布・乾燥した後に焼結することを要する。これにより、ペースト中の金属粒子どうし、及び接合部材の接合面（ペースト塗布面）と金属粒子との間に、互いに点接触した近接状態が形成され、金属配線素材としての形状が安定する。この焼結の温度は、８０〜３００℃とするのが好ましい。８０℃未満では点接触が生じないからである。一方、３００℃を超える温度で焼結すると、焼結が過度に進行し、金属粉末間のネッキングが進行して強固に結合し、硬すぎる状態となるからである。また、３００℃を超える加熱はガラス基板の変形が生じる恐れがある。尚、焼結の際の加熱時間は、３０〜１２０分とするのが好ましい。短時間では焼結炉の温度が安定せず十分な焼結ができず、また、あまりに長時間とすると生産性が損なわれるからである。また、この焼結は、圧力の負荷のない状態で行なうのが好ましい。
次に本発明に係る転写用基板による被転写物への金属配線の形成方法は、基本的には従来の転写法によるものと同一である。即ち、転写用基板を金属配線素材が形成された面が被転写物（ウェハ）に対向した状態で重ね、転写用基板及び被転写物を加熱すると共に金属配線素材を被転写物に押圧し、金属配線素材を被転写物に接合させた後に、転写用基板を除去するものである。このとき本発明においては、転写用基板の加熱温度を８０〜２００℃とし、被転写物の加熱温度を８０〜３００℃とするものである。
本発明では、被転写物の加熱温度を８０〜３００℃と従来の転写基板による転写工程よりも低温とすることができる。そして、この被転写物の加熱温度については、好ましくは１００〜２００℃とする。転写用基板からの金属配線素材を確実に転写させるため、そして、被転写物から転写基板への熱伝導による過熱を効果的に防ぐためである。また、転写用基板の加熱温度としては、１００〜２００℃とするのがより好ましい。
また、この転写法では金属配線素材の被転写物への押圧即ち加圧が必要であるが、この圧力は、金属配線素材の降伏強度以下とすることが好ましい。降伏強度を大きく超えた加圧は金属配線素材を変形させ、所定の高さや形状を確保できないからである。具体的には、金属配線素材の降伏強度に対して０．１〜１．５倍の加圧力とすることが好ましい。
尚、被転写物には、金属配線を形成する部位に、予め、転写用基板の金属配線素材を構成する金属を含む金属からなる電極膜を形成するのが好ましい。確実に金属配線素材を転写させるためである。但し、完全な同一組成とする必要はない。例えば、金属配線素材が金粉と銀粉との混合体からなる場合、被転写物への電極膜を金で構成すれば良い。また、この電極膜は、単層でも複数層でも良く、最表面が金属配線素材と同系の金属からなっていれば良い。
以上説明したように、本発明に係る転写用基板は、転写時の被転写物の加熱温度を低温としても安定的に金属配線素材を転写させることができる。これにより、転写基板の過熱による変形を防ぐことができ、また、被転写物の損傷も防止できる。
本実施形態における金属配線の形成工程を概略説明する図。
第１実施形態：ガラス基板を用いて転写用基板を製造し、これを用いてＳｉウェハーへの金属配線形成を行った。
（転写用基板の製造）
まず、ガラス基板（直径寸法１００mm、４インチ、平均厚さ５００μｍ）に下地金属膜としてＰｔをスパッタリングにより成膜した。Ｐｔ膜形成は、逆スパッタ（Ａｒ圧力２．８×１０−１Ｐａ、ＲＦ出力２５０Ｗ、スパッタ時間６０秒）でガラス基板をクリーニングした後、Ｐｔターゲットを用いてＡｒ圧力７．０×１０−１Ｐａ、ＤＣ出力５００Ｗ、スパッタ時間１１５秒の条件で成膜し、厚さ２０ｎｍのＰｔ膜を形成した。
次に、Ａｕ粉末からなる金属ペーストを用いて、ガラス基板上に金属配線素材を形成した。ここで使用した金属ペーストは、湿式還元法により製造された純度９９．９５重量％の金粉（平均粒径：０．３μｍ）と、有機溶剤としてエステルアルコール（２，２，４−トリメチル−３−ヒドロキシペンタイソブチレート（Ｃ１２Ｈ２４Ｏ３））を混合して調整されたものである。金属配線素材の形成にあたっては、ガラス基板にフォトレジストを塗布し、通常のフォトリソグラフ技術を用いて複数の貫通孔を形成した。そして、金属ペーストをフォトレジストの表面に滴下し、スピンコート法によってフォトレジストの貫通孔内に金ペーストを充填した。次に、ペースト塗布後の基板を５０℃以下の温度で保持された乾燥器にて乾燥し、その後レジストを有機溶剤で剥離した。レジスト剥離後、基板を電気炉に入れて金粉末を焼結させて金属配線素材を形成した。焼結温度は９０℃で１時間加熱した。本実施形態では、基板上に矩形の金属配線素材（直径寸法５０μｍ、高さ２５μｍ）を等間隔に１００個形成した。
（ウェハーへの転写）
上記で製造した転写用基板を用いて、Ｓｉウェハへの配線形成を行った。図１は、その工程を説明する図である。図１のように、本実施形態で製造した転写用ガラス基板を上部加熱ブロックに吸着設置し、配線を形成するＳｉウェハ（寸法１００mm、４インチ）を下部加熱ブロックに設置する。Ｓｉウェハの表面には、電極膜としてＴｉ／Ｐｔ／Ａｕ（厚さ５０ｎｍ／５０ｎｍ／２００ｎｍ）が形成されている。転写用基板及びＳｉウェハの設置後、上部加熱ブロックを下降させ、転写用基板をＳｉウェハに密着させる。そして、上部加熱ブロックを１５０℃、下部加熱ブロックを１５０℃に加熱し、加圧力３０ＭＰａで上部加熱ブロックを押圧し、この押圧状態を１０分間維持した。時間経過後、上部加熱ブロックを上昇させた。尚、このときの加圧力は、予め１５０℃以下で測定した金粉末焼結体の降伏強度（２１ＭＰａ）の１．４倍に設定している。
上部加熱ブロック上昇後、転写用基板の金属配線素材の残存を確認したが、転写残りは存在せず、Ｓｉウェハ上に全ての金属配線素材が転写されており、金属配線の形成が確認された。また、転写された金属配線について、その個々の高さを測定し、ばらつきを確認したが、±０．５μｍの範囲内にあり、その形状も良好であることが確認された。
第２実施形態：ここでは、転写基板上の金属配線素材を構成する金属粉末（金属ペースト）、下地金属膜の構成を種々変更して転写用基板を製造し、それぞれを用いてＳｉウェハへの金属配線形成を行った。ここで、製造した転写用基板の構成は以下の通りである。これらの転写用基板の製造条件は、金属粉末の種類及び下地金属形成のためのターゲット材質（下地金属膜が合金の場合は、同一組成の合金ターゲットを使用した）以外は、第１実施形態と同様である。
Figure 0004859996
上記の各種転写用基板を用いて、Ｓｉウェハへの金属配線形成を行った。これらの試験については、Ｓｉウェハ上の金属膜を一部変更している。また、下部ブロックの加熱温度も一部変更している。この試験結果を表２に示す。
Figure 0004859996
上記表２からわかるように、金属配線素材を各種の金属粉末で形成した場合、或いは、下地金属膜を変更した場合のいずれにおいても３００℃以下の低温で確実な転写が可能であることがわかる。但し、いくら低温であってもウェハ側の加熱温度が低い場合には転写率が悪化する傾向がある（試験Ｎｏ．１８）。また、粒径の粗い金属粉末を用いた場合（試験Ｎｏ．１９）、ウェハ側の加熱温度を比較的高めにしても、転写率に劣ることがわかる。
本発明は、半導体ウェハ、化合物ウェハ、ＭＥＭＳウェハ等の被転写物上への金属配線形成において、従来よりも低温の加工工程を提供することができ、金属配線の微細化、品質保持に貢献することができる。

Claims (6)

  1. 基板と、前記基板上に形成された少なくとも一つの金属配線素材と、前記基板と前記金属配線素材との間に形成された下地金属膜とからなり、前記金属配線素材を被転写物に転写させるための転写用基板を被転写物に対向させて重ね、前記転写用基板及び前記被転写物を加熱すると共に、前記転写用基板を押圧して金属配線素材を前記被転写物に接合して転写する金属配線の形成方法であって、
    前記転写用基板の前記金属配線素材は、純度９９．９重量％以上、平均粒径０．０１μｍ〜１．０μｍである金粉、銀粉、白金粉、パラジウム粉、銅粉から選択される一種以上の金属粉末を焼結してなる成形体であり、
    前記転写用基板の前記下地金属膜は、金、銀、白金、パラジウム、ルテニウム、ロジウム、イリジウム、クロム、チタン、タングステン、タンタル、ニッケル、銅、ジルコニウムの何れかの金属又はこれらの合金からなるものであり、
    前記転写用基板の加熱温度を８０〜２００℃とし、前記被転写物の加熱温度を８０〜３００℃とする方法。
  2. 転写用基板を押圧する際の圧力を、金属配線素子の降伏強度の０．１〜１．５倍とする請求項１記載の金属配線の形成方法。
  3. 被転写物に転写用基板の金属配線素材を構成する金属を含む金属からなる電極膜を形成した後、金属配線素材を転写する請求項１又は請求項２記載の金属配線の形成方法。
  4. 転写用基板の金属配線素材を、純度９９．９重量％以上、平均粒径０．０１μｍ〜１．０μｍである金粉、銀粉、白金粉、パラジウム粉、銅粉から選択される一種以上の金属粉末と有機溶剤とからなる金属ペーストを塗布し、焼結して製造する請求項１〜請求項３のいずれかに記載の金属配線の形成方法。
  5. 転写用基板の下地金属膜は、金属配線素材と相違する組成の金属又は合金からなる請求項１〜請求項４のいずれかに記載の金属配線の形成方法。
  6. 転写用基板の下地金属膜は、厚さ１〜１００ｎｍである請求項１〜請求項５のいずれかに記載の金属配線の形成方法。
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013110174A (ja) * 2011-11-18 2013-06-06 Tanaka Kikinzoku Kogyo Kk 金属配線形成用の転写基板及び前記転写用基板による金属配線の形成方法
EP2833393A4 (en) * 2012-03-29 2015-12-09 Tanaka Precious Metal Ind CONDUCTIVE PASTE FOR CHIP FIXING AND CHIP FIXING METHOD USING THE CONDUCTIVE PASTE FOR CHIP FIXING

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150048538A (ko) * 2013-10-28 2015-05-07 희성금속 주식회사 반도체용 재활용 Ａｕ 타겟의 제조방법
JP2018524415A (ja) 2015-05-08 2018-08-30 ヘンケル アイピー アンド ホールディング ゲゼルシャフト ミット ベシュレンクテル ハフツング 焼結可能フィルムおよびペーストおよびその使用方法
US9865565B2 (en) * 2015-12-08 2018-01-09 Amkor Technology, Inc. Transient interface gradient bonding for metal bonds
US10037957B2 (en) 2016-11-14 2018-07-31 Amkor Technology, Inc. Semiconductor device and method of manufacturing thereof
FR3103805A1 (fr) * 2019-12-02 2021-06-04 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de depot localise d’un materiau sur un element
CN116504646B (zh) * 2023-06-21 2023-12-15 青岛泰睿思微电子有限公司 多芯片排列封装结构及方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06267963A (ja) * 1993-03-17 1994-09-22 Rohm Co Ltd 半導体部品におけるバンプ電極の形成方法
JP2006260954A (ja) * 2005-03-17 2006-09-28 Casio Comput Co Ltd 配線及びそのパターニング方法並びにディスプレイ及びその製造方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57152147A (en) * 1981-03-16 1982-09-20 Matsushita Electric Ind Co Ltd Formation of metal projection on metal lead
JPS62214532A (ja) * 1986-03-17 1987-09-21 Toshiba Corp スタンパの製造方法
EP0275433B1 (de) * 1986-12-22 1992-04-01 Siemens Aktiengesellschaft Verfahren zur Befestigung von elektronischen Bauelementen auf einem Substrat, Folie zur Durchführung des Verfahrens und Verfahren zur Herstellung der Folie
JPH0730362B2 (ja) * 1987-03-20 1995-04-05 株式会社日立製作所 電子部品及びその製造方法
JPH06118441A (ja) * 1991-11-05 1994-04-28 Tadanobu Kato 表示セル
JPH05144870A (ja) 1991-11-19 1993-06-11 Fujitsu Ltd バンプ転写方法
JPH08288632A (ja) * 1995-04-17 1996-11-01 Ibiden Co Ltd 半田キャリア及びプリント配線板の製造方法
US6871396B2 (en) * 2000-02-09 2005-03-29 Matsushita Electric Industrial Co., Ltd. Transfer material for wiring substrate
JP2004228375A (ja) * 2003-01-23 2004-08-12 Seiko Epson Corp バンプの形成方法、デバイス、及び電子機器
JP2005166739A (ja) * 2003-11-28 2005-06-23 Fuji Xerox Co Ltd 金属バンプ接続方法および金属バンプ付き回路部品
JP4255847B2 (ja) * 2004-01-27 2009-04-15 田中貴金属工業株式会社 金属ペーストを用いた半導体ウェハーへのバンプの形成方法
US20060163744A1 (en) * 2005-01-14 2006-07-27 Cabot Corporation Printable electrical conductors
EP1975946B1 (en) * 2007-03-29 2013-07-31 Fry's Metals, Inc. Devices & methods for producing & using electrical conductors
JP2009094440A (ja) * 2007-10-12 2009-04-30 Fuji Xerox Co Ltd 電子写真方式を用いた配線部材の製造装置及び製造方法
JP5363839B2 (ja) * 2008-05-12 2013-12-11 田中貴金属工業株式会社 バンプ及び該バンプの形成方法並びに該バンプが形成された基板の実装方法
DE102009018541A1 (de) * 2009-04-24 2010-10-28 W.C. Heraeus Gmbh Kontaktierungsmittel und Verfahren zur Kontaktierung elektrischer Bauteile
JP5202714B1 (ja) * 2011-11-18 2013-06-05 田中貴金属工業株式会社 金属配線形成用の転写基板及び前記転写用基板による金属配線の形成方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06267963A (ja) * 1993-03-17 1994-09-22 Rohm Co Ltd 半導体部品におけるバンプ電極の形成方法
JP2006260954A (ja) * 2005-03-17 2006-09-28 Casio Comput Co Ltd 配線及びそのパターニング方法並びにディスプレイ及びその製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013110174A (ja) * 2011-11-18 2013-06-06 Tanaka Kikinzoku Kogyo Kk 金属配線形成用の転写基板及び前記転写用基板による金属配線の形成方法
KR20140099889A (ko) * 2011-11-18 2014-08-13 다나카 기킨조쿠 고교 가부시키가이샤 금속 배선 형성용 전사 기판 및 상기 전사용 기판에 의한 금속 배선의 형성 방법
EP2833393A4 (en) * 2012-03-29 2015-12-09 Tanaka Precious Metal Ind CONDUCTIVE PASTE FOR CHIP FIXING AND CHIP FIXING METHOD USING THE CONDUCTIVE PASTE FOR CHIP FIXING

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