WO2015098834A1 - 気密封止パッケージ部材及びその製造方法、並びに、該気密封止パッケージ部材を用いた気密封止パッケージの製造方法 - Google Patents
気密封止パッケージ部材及びその製造方法、並びに、該気密封止パッケージ部材を用いた気密封止パッケージの製造方法 Download PDFInfo
- Publication number
- WO2015098834A1 WO2015098834A1 PCT/JP2014/083904 JP2014083904W WO2015098834A1 WO 2015098834 A1 WO2015098834 A1 WO 2015098834A1 JP 2014083904 W JP2014083904 W JP 2014083904W WO 2015098834 A1 WO2015098834 A1 WO 2015098834A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- sealing material
- sealing
- package member
- substrate
- hermetically sealed
- Prior art date
Links
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Images
Classifications
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0045—Packages or encapsulation for reducing stress inside of the package structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00269—Bonding of solid lids or wafers to the substrate
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00325—Processes for packaging MEMS devices for reducing stress inside of the package structure
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8423—Metallic sealing arrangements
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
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- B81C2203/01—Packaging MEMS
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- B81C2203/019—Seals characterised by the material or arrangement of seals between parts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H—ELECTRICITY
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/162—Disposition
- H01L2924/16235—Connecting to a semiconductor or solid-state bodies, i.e. cap-to-chip
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/163—Connection portion, e.g. seal
- H01L2924/164—Material
- H01L2924/16598—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/166—Material
- H01L2924/167—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
Definitions
- the present invention relates to a package member used for hermetic sealing of various devices such as electronic devices and a method of manufacturing the same.
- it relates to a package member useful in the manufacture of wafer level packages for forming a plurality of sealed areas on a substrate.
- Various functional devices used in electronic devices such as MEMS elements are delicate parts having a sensitive part and a drive part, and many are hermetically sealed and packaged in order to prevent functional deterioration due to adhesion of particles and the like.
- These hermetically sealed packages are manufactured by bonding and sealing a substrate on which a semiconductor element is mounted and a cover with a sealing material.
- brazing materials for example, Au—Sn-based brazing materials etc.
- a sealing method using a metal paste as a method capable of low-temperature bonding and having good sealing characteristics (Patent Document 1).
- a metal powder sintered body obtained by applying a metal paste containing a predetermined metal powder and sintering it is used as a sealing material.
- this metal powder sintered body by being heated and pressurized at the time of bonding (at the time of sealing), further densification occurs, and since it has almost the same compactness as the bulk body, it acts as a sealing material It can.
- the wafer level package is a process of completing the installation of the encapsulant and the assembly of the device on the wafer without separating into chips.
- the sealing method using metal paste according to the present inventors is also basically compatible with wafer level packages.
- metal paste can be coated on a wafer in a fine pattern, and by sintering this, a sealing material made of a metal powder sintered body can be formed.
- the sealing region can be formed by pressing the upper substrate (upper wafer) onto the wafer on which the sealing material is formed.
- the problem here is an increase in pressing load in the sealing step (the bonding step using a sintered body) due to the increase in the number of packages on the wafer.
- sealing with a metal powder sintered body is achieved by heating and pressing, and at the time of sealing, it is necessary to pressurize the wafer to sufficiently densify the metal powder sintered body.
- the pressing load required at this time becomes large according to the cross-sectional area (sealing area) of the sealing material (metal powder sintered body). Since the sealing area is proportional to the number of packages, an increase in the number of packages leads to an increase in pressing load, which increases the load on the wafer bonding apparatus and may exceed the specification of the apparatus.
- the wafer level package is intended to cope with high density packaging of the package, but when using a metal powder sintered body as a sealing material, it becomes necessary to set the sealing region while suppressing the pressing load. May not be able to fully enjoy its benefits.
- the present invention has been made based on the background as described above, and it is sufficient for a hermetically sealed package using a metal powder sintered body as a sealing material while reducing the load at the time of hermetic sealing. It provides a method to show the effect.
- the sealing material made of the metal powder sintered body by the present inventors etc. utilizes the characteristics based on the purity and particle diameter of the metal powder to be applied, so that the compactness is increased by pressure even after becoming a sintered body. It has become.
- the increase in the compactness due to this pressure is not only physical changes such as plastic deformation and bonding of metal particles (powder) but also metallographically due to recrystallization due to thermal energy applied by pressure and heat. It is due to change. Changes such as plastic deformation and recrystallization of the metal powder are caused by pressing and compressing the sintered body while being restrained from above and below.
- the sealing material and the upper and lower substrates are in contact and pressurized in a partial range, plastic deformation and recrystallization of the metal powder generated inside the sealing material should also be partial. . And the load required for that is considered to become low. Based on this consideration, the present inventors adjusted the shape of the metal powder sintered body as the sealing material and found a state having a sealing effect even with a low load, and considered the present invention.
- the sealing material has a purity of 99 .9 formed from a sintered body formed by sintering one or more metal powders selected from gold, silver, palladium, and platinum having an average particle diameter of 0.005 ⁇ m to 1.0 ⁇ m and not less than 9% by weight
- the upper end length of the sealing material is shorter than the lower end length in an arbitrary cross section from the sealing area toward the outside of the area.
- the upper end length in contact with the upper substrate to be joined is shorter than the lower end length in contact with the substrate in the cross-sectional shape of the frame-like sealing material set on the substrate. It shall be formed in (Fig.1 (a)).
- the upper end length is shortened for the cross-sectional shape of the sealing material made of metal powder sintered body, if the upper substrate is pressed at the time of sealing, compression is received from the top of the upper end, and deformation of the metal powder immediately below occurs. Crystalline regions are formed (FIG. 1 (b)).
- the columnar recrystallization area is densified with respect to the surrounding metal powder sintered body and has a sealing effect, whereby the airtightness of the sealing area can be secured.
- the sealing material in the present invention is entirely made of a sintered body of metal powder.
- the formation process of this sintered body will be described in detail later, but is a kind selected from gold, silver, palladium, platinum having a purity of 99.9% by weight or more and an average particle diameter of 0.005 ⁇ m to 1.0 ⁇ m. It is what sintered the metal powder which consists of the above metal.
- the requirement for high purity metal is that when the purity is low, the hardness of the powder increases and deformation / recrystallization progresses after being formed into a sintered body It is because there is a possibility that it may become hard to exert the sealing effect.
- the formed sealing material is made of the same high purity metal as the powder. Specifically, it is composed of a metal having a purity of 99.9% by weight or more.
- the sealing material in the present invention one formed of a base having a constant height and at least one peak portion projecting from the base can be mentioned.
- the sealing region can be formed while reducing the pressing load.
- the width of the ridges formed on the base affects the width of the recrystallized region, and the number of ridges affects the number of recrystallized regions.
- at least one peak portion needs to be formed, preferably a plurality of peak portions are preferably formed. This is to form a plurality of recrystallized regions in a backup manner.
- the heights of the ridges need not always be uniform within the range of the height ratio with the above-described base.
- the height of the intersection of the locus may be a peak, and a lower peak may be formed between the intersections (see the embodiment described later).
- the slope (ridge) from the top to the lower end may be a straight line or a curved line (FIG. 4).
- cross-sectional shape of the sealing material in the present invention in addition to the above-described ones, those formed so as to form a peak portion having a substantially triangular shape whose bottom side is the lower end length of the sealing material are also listed. ( Figure 5).
- the cross-sectional shape of the sealing material is simple, and the recrystallization area formed by compression is one, but the cross-sectional shape of the sealing material is preferable when it is necessary to minimize the sealing region. It is.
- the ratio (h '' / L) of the height (h '') of the ridges to the length (L) of the bottom side It is preferable to set it as 3.0. If the height of the peak is too low, it is necessary to increase the load to increase the compression amount of the peak.
- the top of the peak does not have to be at the center of the bottom, but may be left or right. Further, the heights of the ridges may not be uniform, and may be within the range of the ratio described above.
- the cross-sectional shape of the sealing material is defined as described above, but the planar shape is particularly limited as long as it has a frame shape for defining the sealing region on the substrate. It is not a thing.
- the frame shape may be a circular frame or a rectangular frame.
- the substrate in the present invention is a member that needs to form at least one sealing region on the surface thereof, and may be a resin substrate in addition to a silicon wafer and a metal wafer.
- a semiconductor element etc. may be beforehand installed in the sealing area
- the sealing material may be formed directly on the substrate, but a base metal film may be formed on the surface of the substrate and the sealing material may be formed thereon.
- This base film is for enhancing the adhesion between the metal powder sintered body, which is a sealing material, and the substrate, and by setting the base film, a uniform pressure is applied to the sintered body. Appropriate recrystallization can be induced.
- the undercoating film is preferably made of gold, silver, palladium, platinum, titanium, chromium, tungsten, a titanium-tungsten alloy, or nickel, and is preferably high purity (99.9% by weight or more).
- the sealing material in order to secure the adhesion to the sealing material, it is preferably made of a bulk metal, and is preferably formed by plating (electrolytic plating, electroless plating), sputtering, vapor deposition, CVD method or the like.
- the metal film may have either a single layer structure or a multilayer structure, but the metal of the layer in contact with the sealing material is preferably a metal of the same material as the metal powder.
- the hermetically sealed package member according to the present invention can be manufactured by applying a metal paste of a predetermined configuration in a frame shape on a substrate and then baking it.
- the metal paste for forming the sealing material is one or more selected from gold, silver, palladium, platinum having a purity of 99.9% by weight or more and an average particle diameter of 0.005 ⁇ m to 1.0 ⁇ m.
- the basic composition is composed of metal powder and an organic solvent. Making the purity of the metal powder 99.9% by weight or more is, in addition to considering deformability and recrystallization when it is made a sintered body, as well as ensuring conductivity as well. .
- the average particle diameter of the metal powder is set to 0.005 ⁇ m to 1.0 ⁇ m
- a large gap is generated when filled in a minute through hole, and finally This is because the necessary conductivity can not be secured, and with a particle diameter of less than 0.005 ⁇ m, the metal paste is easily aggregated and the filling into the through holes becomes difficult.
- the mixing ratio of the metal powder of the metal paste to be applied and the organic solvent it is preferable to mix the metal powder in an amount of 80 to 99% by weight and the organic solvent in an amount of 1 to 20% by weight. Such a ratio is used to prevent aggregation of the metal powder and to supply sufficient metal powder to form the sealing material.
- the metal paste used in the present invention may contain an additive.
- the additive includes one or more selected from acrylic resins, cellulose resins, and alkyd resins.
- acrylic resin methyl methacrylate polymer can be mentioned
- cellulose resin ethyl cellulose
- alkyd resin phthalic anhydride resin
- These additives have the effect of suppressing the agglomeration of the metal powder in the metal paste, and make the metal paste homogeneous.
- the additive amount of the additive is preferably 2% by weight or less based on the metal paste.
- the metal powder content can be made into the range sufficient for through-hole filling, maintaining the stable aggregation suppression effect.
- a mask having a mesh-like opening for forming a sealing material is placed on the substrate surface, the metal paste is applied here, and the opening is filled with the metal paste.
- the planar shape of the mask opening is preferably the same frame shape as the sealing material.
- a mask having a mesh-like opening is applied, which aims to form ridges of the sealing material.
- the process of this peak formation will be described with reference to FIG.
- the mesh is provided in the mask opening in a state of having a constant height with respect to the substrate surface.
- the metal paste is filled to a height at least in contact with the mesh of the opening (FIG. 6 (a)).
- the mask is removed after the filling of the metal paste is completed.
- the surface is lifted by the action of the surface tension of the metal paste (FIG. 6 (b)).
- a peak is formed (FIG. 6 (c)).
- the height of the ridges formed by utilizing the surface tension of the metal paste as described above is adjusted by the viscosity of the metal paste.
- the metal paste preferred from the viewpoint of viscosity has a thixotropy index (TI) value of 3 to 15, which is calculated from the measured viscosity of 4 / s relative to the viscosity of shear rate 40 / s at 23 ° C. by a rotational viscometer
- the viscosity at a shear rate of 4 / s is 30 to 1000 Pa ⁇ s.
- the viscosity of the metal paste can be adjusted by the selection of the organic solvent, the mixing ratio of the metal powder to the organic solvent, the presence or absence of an additive, and the addition amount.
- a more preferable metal paste is one having a thixotropy index value of 5 to 10, and a viscosity of 100 to 800 Pa ⁇ s at a shear rate of 4 / s.
- the mesh pattern of the pattern opening corresponds to the locus of the peak of the peak of the sealing material in plan view.
- the wire diameter of the mesh is preferably 10 to 25 ⁇ m, and the opening of the hole is preferably 20 to 70 ⁇ m.
- the mesh may be formed by knitting a thin line, but may be manufactured by a plating method, an electric casting method, an etching or the like.
- the thickness of the mask is preferably 2 to 50 ⁇ m.
- the material of the mask may be a commonly used photosensitive emulsion, or a metal foil such as a nickel foil or the like in order to enhance the solvent resistance in the paste.
- the drying temperature is preferably 150 to 250 ° C.
- the heating temperature for sintering the metal paste is preferably 150 to 300.degree. If the temperature is less than 150 ° C., the metal powder can not be sintered sufficiently. If the temperature exceeds 300 ° C., the sintering proceeds excessively and becomes too hard due to the progress of necking between the metal powders. Further, as the atmosphere at the time of firing, air, inert gas (nitrogen, argon, helium), inert gas mixed with 1 to 5% hydrogen, or the like is selected. Further, the baking time is preferably 30 minutes to 8 hours. If the sintering time is too long, the sintering proceeds excessively and the problem of becoming too hard due to the progress of necking between metal powders occurs.
- the hermetically sealed package member is manufactured as described above, and the substrate and another substrate are placed in an overlapping manner via the sealant, and heated and heated.
- the pressure is applied to densify the sealing material.
- the other substrate may be the same material and size as the substrate of the hermetically sealed package member according to the present invention, or may be different material and size.
- a device such as a semiconductor element may be used.
- the heating temperature is preferably 80 to 300.degree. This is to promote recrystallization of the metal powder while suppressing damage to the substrate and elements on the substrate.
- the heating temperature is 150 to 250.degree.
- the heating / pressurizing time is preferably 0.5 to 3 hours after reaching the set heating temperature. Then, due to the heat and pressure treatment, the peak portion of the sealing material is crushed, and plastic deformation and recrystallization of the metal powder occur preferentially in the vicinity immediately below the peak portion of the base, thereby densifying. Since the recrystallization region formed by this makes partial contact between the upper substrate and the sealing material, it is lower than the conventional method in which the entire surface of the sealing material is pressed to recrystallize the whole. A hermetic seal is established by the load.
- the hermetic sealing package member according to the present invention even when a plurality of sealing regions are set on the substrate, reliable hermetic sealing can be obtained while reducing the pressure load.
- the hermetic sealing method according to the present invention can hermetically seal a plurality of regions in a relatively simple process using a predetermined metal paste, and application to a wafer level package can be expected.
- region formation in the sealing material of this invention The figure explaining the dimension of the peak part of the sealing material which has a base and a peak part.
- First Embodiment A silicon wafer having a diameter of 4 inches is prepared as a substrate, and Ti (0.05 ⁇ m) / Pt (0.01 ⁇ m) / Au (0.2 ⁇ m) (Ti on the wafer surface side is formed as an undercoat film on the surface thereof. A three-layer metal film was formed by sputtering.
- the metal paste which is a raw material of the sintered compact used as a sealing material was adjusted.
- the metal paste was prepared by mixing 96% by weight of metal powder produced by a wet reduction method and 4% by weight of isobornyl cyclohexanol (MTPH) as an organic solvent.
- MTPH isobornyl cyclohexanol
- metal pastes of metal powders of gold, silver, palladium and platinum were prepared.
- Viscosity of each of the prepared metal pastes was measured in advance. Viscosity measurement was performed using a conical rotational viscometer (Rheostress RS 75 (cone plate: 35 mm titanium, 0.05 mm gap) manufactured by HAAKE) at a measurement temperature of 23 ° C., shear rate 4 / s, 20 / s, 40 It hold
- maintained for 30 seconds each in order of / s, and measured continuously. Then, based on the measured value, the thixotropy index (TI) value was calculated by the following equation. TI (viscosity of share rate 4 / s) ⁇ (viscosity of share rate 40 / s)
- the said metal paste was apply
- ten sealing regions each having a width of 300 ⁇ m of the sealing material and a 10 mm square pattern are set on the wafer.
- the metal paste was applied through a screen mask (suspended metal mask) along the pattern of the sealing material.
- the screen mask product name: ESP metal mask; Taiyo Kagaku Kogyo Co., Ltd.
- used here is obtained by replacing the emulsion portion of a general emulsion (emulsion) mask with Ni foil metal.
- the thickness of the Ni foil is 30 ⁇ m, a metal wire with a wire diameter of 16 ⁇ m is knitted on the upper surface of the opening with a hole density of 500, and the opening of the holes is 33 ⁇ m.
- the metal paste was applied by placing a metal mask on a wafer, and applying the metal paste by screen printing from above. Then, after the metal paste was filled in the opening of the metal mask, the metal mask was moved substantially vertically upward, and a peak portion was formed by the mesh of the opening.
- the metal paste was applied, it was dried at 150 ° C. to remove the solvent and gas components in the metal paste. Thereafter, the metal paste was fired in a nitrogen-4% hydrogen atmosphere at 200 ° C. to remove the solvent and gas components in the metal paste.
- the appearance of the sealing material after this sintering is shown in FIG. About this sealing material, the cross section was observed with the scanning electron microscope, Binarization processing was carried out by image analysis based on the image, and the relative density of the sealing material was calculated based on the ratio of the pore part and the non-porous part. .
- a 4-inch silicon wafer formed with the same base film Ti (0.05 ⁇ m) / Pt (0.01 ⁇ m) / Au (0.2 ⁇ m) as the upper substrate It joined and performed airtight sealing.
- the above wafer was placed on the sealing material of the hermetically sealed package member set on the heater in a vacuum atmosphere. Then, after applying a load from above, the heater was heated to 200 ° C. at a temperature rising rate of 30 ° C./min, and was maintained for 30 minutes after reaching 200 ° C.
- helium leak test (bell jar method) was performed to confirm the airtightness of the sealing region inside the sealing material.
- the helium leak rate passed 10 ⁇ 9 Pa ⁇ m 3 / s or less.
- the pressure load in the hermetic sealing process is changed for each metal type of the metal paste to bond the wafers to each other, and the hermeticity in the sealing region is examined. Further, for comparison with the conventional example, a package member having a sealing material with a flat upper surface was manufactured, and the airtightness was also confirmed.
- This conventional example uses the same metal paste as this embodiment, and after forming a pattern with a height of 20 ⁇ m in the same planar shape (sealing material width 300 ⁇ m, pattern shape 10 mm square) as this embodiment by metal mask printing The metal paste was dried and fired to form a rectangular frame-like sealing material. Thereafter, the wafers were joined and hermetically sealed under the same conditions as in the present embodiment. The results are shown in Table 1.
- Second Embodiment Here, as a cross-sectional shape of a sealing material, one having only triangular peaks was formed, and its sealing ability was confirmed. Regarding the same substrate as in the first embodiment, the No. 1 in the first embodiment. A metal paste of 1 was used to form the encapsulant. As for the arrangement pattern of the sealing material on the substrate, 100 sealing regions of 10 mm square with a width (bottom side) of 20 ⁇ m were formed.
- FIG. 8 shows the appearance of the sealing material formed in the present embodiment.
- This sealing material has a width of 20 ⁇ m at the base and a height of 4 to 7 ⁇ m at the top, and the ratio (h ′ ′ / L) of the height (h ′ ′) of the peak to the base length (L) is 0.2 It was -0.4.
- the present invention solves the problem of an increase in pressing load which is a concern when manufacturing a hermetically sealed package in which a plurality of sealing regions are set on a substrate. According to the present invention, reliable hermetic sealing can be obtained while reducing the pressing load, hermetic sealing of a plurality of places can be performed in a relatively simple process, and application to a wafer level package can be expected.
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Abstract
Description
第1実施形態:基板として直径4インチのシリコンウエハーを用意し、その表面に下地膜として、Ti(0.05μm)/Pt(0.01μm)/Au(0.2μm)(Tiがウエハー表面側)の3層の金属膜をスパッタリング法にて成膜した。
TI=(シェアレート4/sの粘度)÷(シェアレート40/sの粘度)
Claims (9)
- 基板と、前記基板上に形成された封止領域を画定する少なくとも1つの枠状の封止材とからなる気密封止パッケージ部材において、
前記封止材は、純度が99.9重量%以上であり、平均粒径が0.005μm~1.0μmである金、銀、パラジウム、白金から選択される一種以上の金属粉末が焼結してなる焼結体より形成されたものであり、
更に、前記封止領域から領域外へ向けての任意断面について、前記封止材の上端長さが下端長さよりも短くなっていることを特徴とする気密封止パッケージ部材。 - 封止領域から領域外へ向けての任意断面における形状が、一定高さを有する基部と、前記基部から突出する少なくとも一つの山部とからなるように形成されている請求項1記載の気密封止パッケージ部材。
- 任意断面における封止材の基部の高さ(h)と山部の高さ(h’)との比(h’/h)が0.2~5.0である請求項2記載の気密封止パッケージ部材。
- 基板平面に対して平行な平面視において、山部の頂点が描く軌跡が網目状、又は、格子状となっている請求項2又は請求項3のいずれかに記載の気密封止パッケージ部材。
- 封止領域から領域外へ向けての任意断面における形状が、封止材の下端長さを底辺とする略三角形状を有する山部となるように形成されている請求項1記載の気密封止パッケージ部材。
- 任意断面における封止材の山部の高さ(h’’)と底辺長さ(L)の比(h’’/L)が0.1~3.0である請求項5記載の気密封止パッケージ部材。
- 請求項1~請求項6のいずれかに記載の気密封止パッケージ部材の製造方法であって、
メッシュ状の開口部を有するマスクを基板表面に載置し、
純度が99.9重量%以上であり、平均粒径が0.005μm~1.0μmである金、銀、パラジウム、白金から選択される一種以上の金属粉末と溶剤とからなる金属ペーストを塗布し、前記開口部に前記金属ペーストを充填した後、前記マスクを引き上げ、
前記金属ペーストを焼成して焼結体からなる封止材を形成する気密封止パッケージ部材の製造方法。 - 金属ペーストは、回転粘度計による23℃におけるシェアレート40/sの粘度に対する4/sの粘度の測定値から算出されるチクソトロピー指数(TI)値が3~15であり、且つ、シェアレート4/sにおける粘度が30~1000Pa・sである請求項7記載の気密封止パッケージ部材の製造方法。
- 請求項1~請求項6のいずれかに記載の気密封止パッケージ部材を用いた気密封止パッケージの製造方法であって、
前記気密封止パッケージ部材の基板と他の基板とを、封止材を介して重ねて配置し、80~300℃に加熱しながら、一方向又は双方向から加圧し、前記封止材を緻密化させる気密封止パッケージの製造方法。
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US15/102,215 US9561952B2 (en) | 2013-12-27 | 2014-12-22 | Hermetic-sealing package member, production method therefor, and hermetically-sealed package production method using this hermetic-sealing package member |
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US20160311677A1 (en) | 2016-10-27 |
EP3089207B1 (en) | 2023-10-25 |
KR20160102521A (ko) | 2016-08-30 |
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