JP4812292B2 - トレンチ構造を有するiii族窒化物半導体装置 - Google Patents
トレンチ構造を有するiii族窒化物半導体装置 Download PDFInfo
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- JP4812292B2 JP4812292B2 JP2004353377A JP2004353377A JP4812292B2 JP 4812292 B2 JP4812292 B2 JP 4812292B2 JP 2004353377 A JP2004353377 A JP 2004353377A JP 2004353377 A JP2004353377 A JP 2004353377A JP 4812292 B2 JP4812292 B2 JP 4812292B2
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- trench
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- nitride
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- gate
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- 150000004767 nitrides Chemical class 0.000 title claims description 63
- 239000004065 semiconductor Substances 0.000 title description 40
- 239000000463 material Substances 0.000 claims description 164
- 239000000758 substrate Substances 0.000 claims description 28
- 230000005684 electric field Effects 0.000 claims description 27
- 230000015556 catabolic process Effects 0.000 claims description 22
- 229910045601 alloy Inorganic materials 0.000 claims description 21
- 239000000956 alloy Substances 0.000 claims description 21
- 238000000151 deposition Methods 0.000 claims description 13
- 230000005669 field effect Effects 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- 230000008859 change Effects 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 231
- 229910002601 GaN Inorganic materials 0.000 description 69
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 63
- 239000012212 insulator Substances 0.000 description 40
- 238000004519 manufacturing process Methods 0.000 description 40
- 238000000034 method Methods 0.000 description 37
- 238000002161 passivation Methods 0.000 description 33
- 230000015572 biosynthetic process Effects 0.000 description 20
- 239000003989 dielectric material Substances 0.000 description 17
- 230000036961 partial effect Effects 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 239000010703 silicon Substances 0.000 description 14
- 229910052710 silicon Inorganic materials 0.000 description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 238000012545 processing Methods 0.000 description 11
- 230000008021 deposition Effects 0.000 description 10
- 230000000694 effects Effects 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 210000004027 cell Anatomy 0.000 description 9
- 229910052757 nitrogen Inorganic materials 0.000 description 8
- 230000010287 polarization Effects 0.000 description 8
- 230000000903 blocking effect Effects 0.000 description 7
- 230000001413 cellular effect Effects 0.000 description 7
- 238000000137 annealing Methods 0.000 description 6
- 230000008901 benefit Effects 0.000 description 6
- 238000005253 cladding Methods 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 230000002829 reductive effect Effects 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 239000011810 insulating material Substances 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 239000011241 protective layer Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 230000002269 spontaneous effect Effects 0.000 description 3
- 229910001928 zirconium oxide Inorganic materials 0.000 description 3
- 210000003850 cellular structure Anatomy 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 210000000746 body region Anatomy 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- -1 for example Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 230000005527 interface trap Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
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- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
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- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
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- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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- H01L29/7789—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface the two-dimensional charge carrier gas being at least partially not parallel to a main surface of the semiconductor body
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Description
本発明の他の実施形態では、基板上にP又はN型エピ層の形成、その後の誘電体部の形成が続くIII族窒化物材料系でFETを作製する方法を提供する。ここで、誘電体部はゲート誘電体として作用してもよい。続いてイオン注入を、誘電層によって保護されない領域に、ゲート及びソース半導体部を形成するために行う。すなわち、誘電層をドープドレイン及びドレイン領域の堆積用のマスクとして用いることが可能である。次いで、ソース及びドレインコンタクトを形成し、コンタクトをアクティブにするアニール段階が続く。次いで、保護誘電層を除去して、III族窒化物装置をパッシベートし、ゲート誘電体を再堆積する。ゲートコンタクトをゲート誘電体上に堆積して、ゲートの下に2DEGを形成して、ゲートがアクティブにされたときにソースとドレインとの間に電流伝導チャネルを形成するようにしてもよい。
例えば、本開示で議論した装置は全てについて、N又はPチャネル型装置を、III族窒化物半導体材料を用いて本発明の構造に対応して作製してもよい。装置240はNチャネル型装置として模式的に実施例として示したものであり、作動の際はエンハンスモード又は空乏モードであってもよい。図9Bに、装置240の最上面242は最初に、次の処理中の層242へのダメージを防止する表面保護と共に備える。表面保護は、例えば層242からの窒素の外拡散を防止する窒素リッチの薄層の堆積の形をとってもよい。
102 本体層
103 界面
104−106 トレンチ
108 III族窒化物材料
130 垂直伝導装置
132 N+基板
134 本体層
135 III族窒化物層
140 トレンチ
200 垂直伝導装置
201 導電性基板
202 ゲート
203 本体層
204 ソース
206 ドレイン
220 装置
224−226 III族窒化物層
229 ゲート誘電体
230 ゲートコンタクト
Claims (18)
- ヘテロ接合電界効果装置であって:
第1のバンドギャップを有する第1のIII族窒化物材料と;
前記第1のIII族窒化物材料に形成され、トレンチ側壁およびトレンチ底部を有し、ゲート電極の受け入れに適したトレンチ構造と;
第2のバンドギャップを有する第2のIII族窒化物材料であって、前記第1のIII族窒化物材料の上に形成され、前記トレンチをライニングし、前記トレンチ側壁を含む界面において前記第1のIII族窒化物材料に隣接する第2のIII族窒化物材料と;を備え、
前記界面は、前記トレンチ構造の少なくとも一の側壁に配置する伝導チャネル用の領域を提供し、当該装置に対して所定の方向に方向付けされており;
前記伝導チャネルは、電界が前記界面に生成されたときに形成されるものであって、これによって公称オフ装置となり;
前記第2のIII族窒化物材料上における前記トレンチ外部の領域に形成され、前記第2のIII族窒化物材料を通じて前記伝導チャネルに結合され、前記伝導チャネルが形成されたときに電流を流すコンタクトを備え、
前記第1のIII族窒化物材料は、第1導電型の高濃度にドープされた第1ドープ層と、第2導電型の第2ドープ層と、前記第1導電型の第3ドープ層とを備え、当該第1ドープ層は当該第2ドープ層に隣接し、当該第2ドープ層は当該第3ドープ層に隣接するものであり、
前記トレンチは、前記第1ドープ層および前記第2ドープ層を貫通して前記第3ドープ層まで延びている
ことを特徴とするヘテロ接合電界効果装置。 - 前記第1及び第2のバンドギャップは異なっている請求項1に記載の装置。
- 装置が垂直伝導装置である請求項1に記載の装置。
- 装置が横方向装置である請求項1に記載の装置。
- 装置は水平に伝導する装置である請求項1に記載の装置。
- トレンチに堆積して導電性ゲート材料を備えた請求項1に記載の装置。
- 前記伝導チャネルが形成されたときに、電流を伝導させるチャネルに結合された第2のコンタクトを前記トレンチ外部の領域に備えた請求項6に記載の装置。
- コンタクトはオーミックコンタクトである請求項1に記載の装置。
- コンタクトはショットキーコンタクトである請求項1に記載の装置。
- 前記装置のセルは、導電性ゲート材料を前記トレンチ構造内に堆積する前記トレンチ構造を備え、前記装置は、少なくとも1つの追加セルをさらに備える請求項6に記載の装置。
- 前記セルおよび前記少なくとも1つの追加セルは、独立して動作できる請求項10に記載の装置。
- 第1及び第2のIII族窒化物材料は、Ga,Al及びInから成る群から選択されたIII族窒化物材料から成る合金である請求項1に記載の装置。
- 前記装置の基板の上に形成され、互いに隣接し、異なる面内格子定数を有して界面にさらなる伝導チャネルを形成する2つの横方向に配置され垂直方向に積み重ねられたIII族窒化物材料を含む多層III族窒化物スタックを備え;
前記伝導チャネルはスタックに結合されて、電流が伝導チャネル及び前記さらなる伝導チャネルを通って流れ得る、請求項1に記載の装置。 - 前記多層III族窒化物スタックに結合され、電流がスタックへ出入りするように作用できる第2のコンタクトを備えた請求項13に記載の装置。
- 前記導電性ゲート材料と前記伝導チャネルとの間に高誘電率ゲート誘電体を備えた請求項6に記載の装置。
- 前記導電性ゲート材料と前記伝導チャネルとの間に高絶縁破壊ゲート誘電体を備えた請求項6に記載の装置。
- 前記導電性ゲート材料と前記伝導チャネルとの間にゲート誘電体を備え、チャネルにおける電荷を変えて装置の電気的特性を調整するように作動できる請求項6に記載の装置。
- 前記トレンチ側壁が、垂直方向、又は、垂直方向に対して角度を有する方向に向いている請求項1に記載の装置。
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US52763603P | 2003-12-05 | 2003-12-05 | |
US60/527,636 | 2003-12-05 | ||
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2004
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11552189B2 (en) | 2019-09-25 | 2023-01-10 | Stmicroelectronics S.R.L. | High electron mobility transistor (HEMT) devices and methods |
Also Published As
Publication number | Publication date |
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US20050145883A1 (en) | 2005-07-07 |
US20080274621A1 (en) | 2008-11-06 |
JP2005203753A (ja) | 2005-07-28 |
US8697581B2 (en) | 2014-04-15 |
DE102004058431A1 (de) | 2005-09-15 |
DE102004058431B4 (de) | 2021-02-18 |
US7439555B2 (en) | 2008-10-21 |
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