JP4772656B2 - 不揮発性半導体メモリ - Google Patents
不揮発性半導体メモリ Download PDFInfo
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- JP4772656B2 JP4772656B2 JP2006344803A JP2006344803A JP4772656B2 JP 4772656 B2 JP4772656 B2 JP 4772656B2 JP 2006344803 A JP2006344803 A JP 2006344803A JP 2006344803 A JP2006344803 A JP 2006344803A JP 4772656 B2 JP4772656 B2 JP 4772656B2
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- 239000004065 semiconductor Substances 0.000 title claims description 138
- 230000015654 memory Effects 0.000 claims description 105
- 239000000758 substrate Substances 0.000 claims description 53
- 238000003860 storage Methods 0.000 claims description 28
- 238000009792 diffusion process Methods 0.000 claims description 20
- 239000010410 layer Substances 0.000 description 142
- 210000004027 cell Anatomy 0.000 description 101
- 230000002093 peripheral effect Effects 0.000 description 32
- 238000000034 method Methods 0.000 description 23
- 238000004519 manufacturing process Methods 0.000 description 18
- 230000008569 process Effects 0.000 description 18
- 239000011229 interlayer Substances 0.000 description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 9
- 229920005591 polysilicon Polymers 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000002955 isolation Methods 0.000 description 5
- 239000000470 constituent Substances 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000005368 silicate glass Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000000779 depleting effect Effects 0.000 description 1
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- 238000010438 heat treatment Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 210000003289 regulatory T cell Anatomy 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
- H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
- H01L29/7926—Vertical transistors, i.e. transistors having source and drain not in the same horizontal plane
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
- H10B41/41—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region of a memory region comprising a cell select transistor, e.g. NAND
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Description
本発明の例の不揮発性半導体メモリは、半導体基板表面に対して垂直方向に延びるピラー状の半導体層に縦型メモリセルトランジスタが設けられる。そのメモリセルの両端に配置される選択ゲートトランジスタのうち、メモリセルの下端側に位置する選択ゲートトランジスタは、半導体基板上に設けられ、半導体基板内に形成された拡散層をソース/ドレイン領域とすることを特徴とする。下端側に位置する選択ゲートトランジスタは、半導体基板内に形成された拡散層を介して、メモリセルが設けられる半導体層と電気的に接続されている。また、この選択ゲートトランジスタは、周辺回路と同一構造のMIS構造トランジスタである。
次に、最良と思われるいくつかの実施の形態について説明する。
図1は、NAND型フラッシュメモリの概略図を示す。NAND型フラッシュメモリは、メモリセルアレイ領域MAと、メモリセルアレイ領域MAのメモリセルを制御するためのロウデコーダ回路RD、センスアンプ回路S/A及び制御回路CCとが、同一チップ上に配置される。以下、ロウデコーダ回路RDなどが配置されるメモリセルアレイ領域MAの周辺領域を、周辺回路領域と述べる。
本実施の形態において、メモリセルMCは、半導体基板1表面に対して垂直方向に延びるピラー状の半導体層側面上に、縦型のメモリセルとなるように形成される。
即ち、読み出し動作において、ゲート電極CG直下のチャネル領域には、ゲート絶縁膜8との界面から1nm程度の範囲に反転層が形成される。そのため、膜厚Tが1nmより薄くなると、反転層のキャリア面密度が急激に低下して、ビット線電流が減少する。この結果、データの読み出しが困難となる。
(1) 構造
上述のNANDセルユニットを用いた実施例について説明を行う。尚、同一部材については、同一符号を付し、詳細な説明を省略する。
はじめに、半導体基板1内に、ウェル領域が形成された後、半導体基板1上に、ゲート絶縁膜となる、例えば、シリコン酸化膜が、熱酸化法により形成される。次に、ゲート電極となる、例えば、ポリシリコン膜、さらに、マスク材となる、例えば、シリコン窒化膜が、例えば、CVD(Chemical Vapor Deposition)法により、半導体基板1上に順次形成される。
図21は、本発明の例の変形例を示す断面図である。
本発明によれば、加工の難易度を下げて、容易に微細化可能な不揮発性半導体メモリを提供することができる。
Claims (4)
- 半導体基板と、前記半導体基板表面に対して垂直方向に延びるピラー状の第1及び第2の半導体層と、前記第1の半導体層の側面上に前記垂直方向に並んで配置され、電荷蓄積層及び制御ゲート電極を有する複数の第1のメモリセルと、前記複数の第1のメモリセルの前記半導体基板とは反対側の端部の前記第1の半導体層の側面上に配置される第1のドレイン側選択ゲートトランジスタと、前記第2の半導体層の側面上に前記垂直方向に並んで配置され、電荷蓄積層及び制御ゲート電極を有する複数の第2のメモリセルと、前記複数の第2のメモリセルの前記半導体基板とは反対側の端部の前記第2の半導体層の側面上に配置される第2のドレイン側選択ゲートトランジスタと、前記複数の第1及び第2のメモリセルの前記半導体基板側の端部の前記半導体基板上に配置されるソース側選択ゲートトランジスタとを具備し、前記ソース側選択ゲートトランジスタは、前記半導体基板内に拡散層を有し、前記拡散層を介して、前記第1及び第2の半導体層と電気的に接続されることを特徴とする不揮発性半導体メモリ。
- 前記ソース側選択ゲートトランジスタに接続されるソース線の上面は、前記複数の第1及び第2のメモリセルのうち、前記半導体基板に最も近い第1及び第2のメモリセルの前記制御ゲート電極の底面より低い位置に設定されることを特徴とする請求項1に記載の不揮発性半導体メモリ。
- 前記第1及び第2の半導体層は、エピタキシャル層であることを特徴とする請求項1に記載の不揮発性半導体メモリ。
- 前記第1及び第2のメモリセルは、前記第1及び第2の半導体層内に拡散層を有しないことを特徴とする請求項1に記載の不揮発性半導体メモリ。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006344803A JP4772656B2 (ja) | 2006-12-21 | 2006-12-21 | 不揮発性半導体メモリ |
US11/961,211 US7875922B2 (en) | 2006-12-21 | 2007-12-20 | Nonvolatile semiconductor memory and process of producing the same |
KR1020070134562A KR100921287B1 (ko) | 2006-12-21 | 2007-12-20 | 불휘발성 반도체 메모리 및 그 제조 방법 |
TW096149605A TW200845312A (en) | 2006-12-21 | 2007-12-21 | Nonvolatile semiconductor memory and manufacturing method thereof |
US12/974,873 US8148216B2 (en) | 2006-12-21 | 2010-12-21 | Nonvolatile semiconductor memory and process of producing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006344803A JP4772656B2 (ja) | 2006-12-21 | 2006-12-21 | 不揮発性半導体メモリ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008159699A JP2008159699A (ja) | 2008-07-10 |
JP4772656B2 true JP4772656B2 (ja) | 2011-09-14 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006344803A Expired - Fee Related JP4772656B2 (ja) | 2006-12-21 | 2006-12-21 | 不揮発性半導体メモリ |
Country Status (4)
Country | Link |
---|---|
US (2) | US7875922B2 (ja) |
JP (1) | JP4772656B2 (ja) |
KR (1) | KR100921287B1 (ja) |
TW (1) | TW200845312A (ja) |
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JP4821516B2 (ja) * | 2006-08-31 | 2011-11-24 | 旭光電機株式会社 | 多関節構造体 |
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US7875922B2 (en) | 2011-01-25 |
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