JP4511118B2 - 縦形の金属/酸化物/シリコン型電界効果ダイオード - Google Patents
縦形の金属/酸化物/シリコン型電界効果ダイオード Download PDFInfo
- Publication number
- JP4511118B2 JP4511118B2 JP2002592200A JP2002592200A JP4511118B2 JP 4511118 B2 JP4511118 B2 JP 4511118B2 JP 2002592200 A JP2002592200 A JP 2002592200A JP 2002592200 A JP2002592200 A JP 2002592200A JP 4511118 B2 JP4511118 B2 JP 4511118B2
- Authority
- JP
- Japan
- Prior art keywords
- conductivity type
- diode
- region
- layer
- semiconductor body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005669 field effect Effects 0.000 title abstract description 23
- 229910052751 metal Inorganic materials 0.000 title description 23
- 239000002184 metal Substances 0.000 title description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title description 19
- 229910052710 silicon Inorganic materials 0.000 title description 19
- 239000010703 silicon Substances 0.000 title description 19
- 239000004065 semiconductor Substances 0.000 claims abstract description 68
- 238000005530 etching Methods 0.000 claims description 12
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 5
- 238000002513 implantation Methods 0.000 claims description 2
- 229910044991 metal oxide Inorganic materials 0.000 abstract 3
- 150000004706 metal oxides Chemical class 0.000 abstract 3
- 238000000034 method Methods 0.000 description 29
- 239000000758 substrate Substances 0.000 description 21
- 238000004519 manufacturing process Methods 0.000 description 19
- 239000007943 implant Substances 0.000 description 15
- 235000012431 wafers Nutrition 0.000 description 13
- 230000008569 process Effects 0.000 description 9
- 230000000873 masking effect Effects 0.000 description 7
- 239000003990 capacitor Substances 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000001465 metallisation Methods 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 230000020169 heat generation Effects 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229910008484 TiSi Inorganic materials 0.000 description 1
- WYTGDNHDOZPMIW-RCBQFDQVSA-N alstonine Natural products C1=CC2=C3C=CC=CC3=NC2=C2N1C[C@H]1[C@H](C)OC=C(C(=O)OC)[C@H]1C2 WYTGDNHDOZPMIW-RCBQFDQVSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000003362 replicative effect Effects 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0814—Diodes only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
- H01L29/0623—Buried supplementary region, e.g. buried guard ring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Semiconductor Memories (AREA)
- Furan Compounds (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/864,436 US6537921B2 (en) | 2001-05-23 | 2001-05-23 | Vertical metal oxide silicon field effect semiconductor diodes |
PCT/US2002/014848 WO2002095835A2 (en) | 2001-05-23 | 2002-05-08 | Vertical metal oxide semiconductor field-effect diodes |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2004531065A JP2004531065A (ja) | 2004-10-07 |
JP2004531065A5 JP2004531065A5 (ko) | 2005-12-22 |
JP4511118B2 true JP4511118B2 (ja) | 2010-07-28 |
Family
ID=25343277
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002592200A Expired - Fee Related JP4511118B2 (ja) | 2001-05-23 | 2002-05-08 | 縦形の金属/酸化物/シリコン型電界効果ダイオード |
Country Status (12)
Country | Link |
---|---|
US (1) | US6537921B2 (ko) |
EP (2) | EP1393382B1 (ko) |
JP (1) | JP4511118B2 (ko) |
KR (1) | KR100883873B1 (ko) |
CN (1) | CN1309092C (ko) |
AT (1) | ATE516596T1 (ko) |
AU (1) | AU2002305526B8 (ko) |
BR (1) | BR0209916A (ko) |
CA (1) | CA2447722A1 (ko) |
IL (2) | IL158845A0 (ko) |
TW (1) | TW558839B (ko) |
WO (1) | WO2002095835A2 (ko) |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7030680B2 (en) * | 2003-02-26 | 2006-04-18 | Integrated Discrete Devices, Llc | On chip power supply |
DE10308313B4 (de) * | 2003-02-26 | 2010-08-19 | Siemens Ag | Halbleiterdiode, elektronisches Bauteil, Spannungszwischenkreisumrichter und Steuerverfahren |
US7105391B2 (en) * | 2004-03-04 | 2006-09-12 | International Business Machines Corporation | Planar pedestal multi gate device |
JP2006165468A (ja) * | 2004-12-10 | 2006-06-22 | Nec Electronics Corp | 半導体集積回路 |
JP4790340B2 (ja) * | 2005-07-25 | 2011-10-12 | パナソニック株式会社 | 半導体装置 |
US7615812B1 (en) * | 2006-03-23 | 2009-11-10 | Integrated Discrete Devices, Llc | Field effect semiconductor diodes and processing techniques |
US8148748B2 (en) | 2007-09-26 | 2012-04-03 | Stmicroelectronics N.V. | Adjustable field effect rectifier |
US8633521B2 (en) | 2007-09-26 | 2014-01-21 | Stmicroelectronics N.V. | Self-bootstrapping field effect diode structures and methods |
WO2009042807A2 (en) | 2007-09-26 | 2009-04-02 | Lakota Technologies, Inc. | Adjustable field effect rectifier |
US8643055B2 (en) | 2007-09-26 | 2014-02-04 | Stmicroelectronics N.V. | Series current limiter device |
KR100975404B1 (ko) * | 2008-02-28 | 2010-08-11 | 주식회사 종합건축사사무소근정 | 블록담장용 지주 및 이의 시공방법 |
KR100955175B1 (ko) * | 2008-03-13 | 2010-04-29 | 주식회사 하이닉스반도체 | 수직형 반도체 소자 및 그 제조 방법 |
CN102037548B (zh) * | 2008-04-28 | 2014-04-23 | 意法半导体有限公司 | 具有集成场效应整流器的mosfet |
KR101010121B1 (ko) * | 2008-07-04 | 2011-01-24 | 주식회사 하이닉스반도체 | 반도체 소자의 제조방법 |
US8445947B2 (en) * | 2008-07-04 | 2013-05-21 | Stmicroelectronics (Rousset) Sas | Electronic circuit having a diode-connected MOS transistor with an improved efficiency |
WO2011049552A1 (en) * | 2009-10-19 | 2011-04-28 | Integrated Discrete Devices, Llc | Field-effect semiconductor diode and methods of making the same |
CN102064201B (zh) * | 2010-10-22 | 2011-11-30 | 深圳市芯威科技有限公司 | 浅槽金属氧化物半导体二极管 |
US9331065B2 (en) | 2011-05-17 | 2016-05-03 | Semiconductor Components Industries, Llc | Semiconductor diode and method of manufacture |
US8502336B2 (en) | 2011-05-17 | 2013-08-06 | Semiconductor Components Industries, Llc | Semiconductor diode and method of manufacture |
FR2982416B1 (fr) | 2011-11-03 | 2014-01-03 | St Microelectronics Sa | Dispositif electronique de protection contre les decharges electrostatiques |
FR2984604B1 (fr) | 2011-12-16 | 2014-01-17 | St Microelectronics Sa | Dispositif electronique compact de protection contre les decharges electrostatiques. |
JP6396294B2 (ja) * | 2012-07-05 | 2018-09-26 | リテルヒューズ・インク | 過渡電圧回路保護のためのクローバーデバイス |
US9716151B2 (en) | 2013-09-24 | 2017-07-25 | Semiconductor Components Industries, Llc | Schottky device having conductive trenches and a multi-concentration doping profile therebetween |
US9263598B2 (en) | 2014-02-14 | 2016-02-16 | Semiconductor Components Industries, Llc | Schottky device and method of manufacture |
US9716187B2 (en) | 2015-03-06 | 2017-07-25 | Semiconductor Components Industries, Llc | Trench semiconductor device having multiple trench depths and method |
US10431699B2 (en) | 2015-03-06 | 2019-10-01 | Semiconductor Components Industries, Llc | Trench semiconductor device having multiple active trench depths and method |
US9391065B1 (en) | 2015-06-29 | 2016-07-12 | Globalfoundries Inc. | Electrostatic discharge and passive structures integrated in a vertical gate fin-type field effect diode |
DE102018201030A1 (de) | 2018-01-24 | 2019-07-25 | Kardion Gmbh | Magnetkuppelelement mit magnetischer Lagerungsfunktion |
US10388801B1 (en) * | 2018-01-30 | 2019-08-20 | Semiconductor Components Industries, Llc | Trench semiconductor device having shaped gate dielectric and gate electrode structures and method |
US10608122B2 (en) | 2018-03-13 | 2020-03-31 | Semicondutor Components Industries, Llc | Schottky device and method of manufacture |
DE102018206727A1 (de) * | 2018-05-02 | 2019-11-07 | Kardion Gmbh | Energieübertragungssystem und Empfangseinheit zur drahtlosen transkutanen Energieübertragung |
DE102018206724A1 (de) | 2018-05-02 | 2019-11-07 | Kardion Gmbh | Energieübertragungssystem und Verfahren zur drahtlosen Energieübertragung |
DE102018206725A1 (de) | 2018-05-02 | 2019-11-07 | Kardion Gmbh | Empfangseinheit, Sendeeinheit, Energieübertragungssystem und Verfahren zur drahtlosen Energieübertragung |
US10566466B2 (en) | 2018-06-27 | 2020-02-18 | Semiconductor Components Industries, Llc | Termination structure for insulated gate semiconductor device and method |
US10439075B1 (en) | 2018-06-27 | 2019-10-08 | Semiconductor Components Industries, Llc | Termination structure for insulated gate semiconductor device and method |
Family Cites Families (106)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2444255A (en) | 1944-11-10 | 1948-06-29 | Gen Electric | Fabrication of rectifier cells |
DE1229093B (de) | 1963-01-23 | 1966-11-24 | Basf Ag | Verfahren zur Herstellung von Hexahydropyrimidinderivaten |
US3295030A (en) | 1963-12-18 | 1966-12-27 | Signetics Corp | Field effect transistor and method |
DE1221363B (de) | 1964-04-25 | 1966-07-21 | Telefunken Patent | Verfahren zum Verringern des Bahnwiderstands von Halbleiterbauelementen |
US3617824A (en) | 1965-07-12 | 1971-11-02 | Nippon Electric Co | Mos device with a metal-silicide gate |
US3407343A (en) | 1966-03-28 | 1968-10-22 | Ibm | Insulated-gate field effect transistor exhibiting a maximum source-drain conductance at a critical gate bias voltage |
US3458798A (en) | 1966-09-15 | 1969-07-29 | Ibm | Solid state rectifying circuit arrangements |
DE1614574A1 (de) | 1967-08-04 | 1970-10-29 | Siemens Ag | Halbleiterbauelement,insbesondere Halbleiterbauelement mit pn-UEbergang |
US3619737A (en) | 1970-05-08 | 1971-11-09 | Ibm | Planar junction-gate field-effect transistors |
US3864819A (en) | 1970-12-07 | 1975-02-11 | Hughes Aircraft Co | Method for fabricating semiconductor devices |
US3943547A (en) | 1970-12-26 | 1976-03-09 | Hitachi, Ltd. | Semiconductor device |
US3749987A (en) | 1971-08-09 | 1973-07-31 | Ibm | Semiconductor device embodying field effect transistors and schottky barrier diodes |
US3769109A (en) | 1972-04-19 | 1973-10-30 | Bell Telephone Labor Inc | PRODUCTION OF SiO{11 {11 TAPERED FILMS |
US3935586A (en) | 1972-06-29 | 1976-01-27 | U.S. Philips Corporation | Semiconductor device having a Schottky junction and method of manufacturing same |
US4019248A (en) | 1974-06-04 | 1977-04-26 | Texas Instruments Incorporated | High voltage junction semiconductor device fabrication |
FR2289051A1 (fr) | 1974-10-22 | 1976-05-21 | Ibm | Dispositifs a semi-conducteur du genre transistors a effet de champ et a porte isolee et circuits de protection cotre les surtensions |
US3988765A (en) | 1975-04-08 | 1976-10-26 | Rca Corporation | Multiple mesa semiconductor structure |
US4045250A (en) | 1975-08-04 | 1977-08-30 | Rca Corporation | Method of making a semiconductor device |
US4099260A (en) | 1976-09-20 | 1978-07-04 | Bell Telephone Laboratories, Incorporated | Bipolar read-only-memory unit having self-isolating bit-lines |
US4140560A (en) | 1977-06-20 | 1979-02-20 | International Rectifier Corporation | Process for manufacture of fast recovery diodes |
US4104086A (en) | 1977-08-15 | 1978-08-01 | International Business Machines Corporation | Method for forming isolated regions of silicon utilizing reactive ion etching |
US4139880A (en) | 1977-10-03 | 1979-02-13 | Motorola, Inc. | CMOS polarity reversal circuit |
US4153904A (en) | 1977-10-03 | 1979-05-08 | Texas Instruments Incorporated | Semiconductor device having a high breakdown voltage junction characteristic |
US4138280A (en) | 1978-02-02 | 1979-02-06 | International Rectifier Corporation | Method of manufacture of zener diodes |
US4246502A (en) | 1978-08-16 | 1981-01-20 | Mitel Corporation | Means for coupling incompatible signals to an integrated circuit and for deriving operating supply therefrom |
US4330384A (en) | 1978-10-27 | 1982-05-18 | Hitachi, Ltd. | Process for plasma etching |
US4340900A (en) | 1979-06-19 | 1982-07-20 | The United States Of America As Represented By The Secretary Of The Air Force | Mesa epitaxial diode with oxide passivated junction and plated heat sink |
US4318751A (en) | 1980-03-13 | 1982-03-09 | International Business Machines Corporation | Self-aligned process for providing an improved high performance bipolar transistor |
US4372034B1 (en) | 1981-03-26 | 1998-07-21 | Intel Corp | Process for forming contact openings through oxide layers |
US4508579A (en) | 1981-03-30 | 1985-04-02 | International Business Machines Corporation | Lateral device structures using self-aligned fabrication techniques |
US4533988A (en) | 1981-04-09 | 1985-08-06 | Telectronics Pty. Ltd. | On-chip CMOS bridge circuit |
DE3124692A1 (de) | 1981-06-24 | 1983-01-13 | Robert Bosch Gmbh, 7000 Stuttgart | "halbleitergleichrichter" |
US4423456A (en) | 1981-11-13 | 1983-12-27 | Medtronic, Inc. | Battery reversal protection |
US4403396A (en) | 1981-12-24 | 1983-09-13 | Gte Laboratories Incorporated | Semiconductor device design and process |
US5357131A (en) | 1982-03-10 | 1994-10-18 | Hitachi, Ltd. | Semiconductor memory with trench capacitor |
DE3219606A1 (de) | 1982-05-25 | 1983-12-01 | Siemens AG, 1000 Berlin und 8000 München | Schottky-leistungsdiode |
DE3219888A1 (de) | 1982-05-27 | 1983-12-01 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Planares halbleiterbauelement und verfahren zur herstellung |
US4638551A (en) | 1982-09-24 | 1987-01-27 | General Instrument Corporation | Schottky barrier device and method of manufacture |
GB2134705B (en) | 1983-01-28 | 1985-12-24 | Philips Electronic Associated | Semiconductor devices |
DE3334167A1 (de) | 1983-09-21 | 1985-04-04 | Siemens AG, 1000 Berlin und 8000 München | Halbleiterdiode |
US4534826A (en) | 1983-12-29 | 1985-08-13 | Ibm Corporation | Trench etch process for dielectric isolation |
DE3435306A1 (de) | 1984-09-26 | 1986-04-03 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur herstellung von laserdioden mit jutierter integrierter waermesenke |
DE3581348D1 (de) | 1984-09-28 | 1991-02-21 | Siemens Ag | Verfahren zum herstellen eines pn-uebergangs mit hoher durchbruchsspannung. |
JPS61156882A (ja) | 1984-12-28 | 1986-07-16 | Toshiba Corp | 二重拡散形絶縁ゲ−ト電界効果トランジスタ及びその製造方法 |
US4777580A (en) | 1985-01-30 | 1988-10-11 | Maxim Integrated Products | Integrated full-wave rectifier circuit |
US4742377A (en) | 1985-02-21 | 1988-05-03 | General Instrument Corporation | Schottky barrier device with doped composite guard ring |
US4579626A (en) | 1985-02-28 | 1986-04-01 | Rca Corporation | Method of making a charge-coupled device imager |
JPS62119972A (ja) | 1985-11-19 | 1987-06-01 | Fujitsu Ltd | 接合型トランジスタ |
US4745395A (en) | 1986-01-27 | 1988-05-17 | General Datacomm, Inc. | Precision current rectifier for rectifying input current |
US4666556A (en) | 1986-05-12 | 1987-05-19 | International Business Machines Corporation | Trench sidewall isolation by polysilicon oxidation |
US4875151A (en) | 1986-08-11 | 1989-10-17 | Ncr Corporation | Two transistor full wave rectifier |
DE3774036D1 (de) | 1986-08-11 | 1991-11-28 | Siemens Ag | Verfahren zur stabilisierung von pn-uebergaengen. |
JPH0693498B2 (ja) | 1986-08-25 | 1994-11-16 | 日立超エル・エス・アイエンジニアリング株式会社 | 半導体集積回路装置 |
DE3785127D1 (de) | 1986-09-30 | 1993-05-06 | Siemens Ag | Verfahren zur herstellung eines pn-uebergangs hoher spannungsfestigkeit. |
US5338693A (en) | 1987-01-08 | 1994-08-16 | International Rectifier Corporation | Process for manufacture of radiation resistant power MOSFET and radiation resistant power MOSFET |
JPH0744213B2 (ja) | 1987-02-23 | 1995-05-15 | 松下電子工業株式会社 | 半導体装置の製造方法 |
US4811065A (en) | 1987-06-11 | 1989-03-07 | Siliconix Incorporated | Power DMOS transistor with high speed body diode |
US4857985A (en) | 1987-08-31 | 1989-08-15 | National Semiconductor Corporation | MOS IC reverse battery protection |
EP0311816A1 (de) | 1987-10-15 | 1989-04-19 | BBC Brown Boveri AG | Halbleiterbauelement und Verfahren zu dessen Herstellung |
US4822757A (en) | 1987-11-10 | 1989-04-18 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and method of manufacturing the same |
US4903189A (en) | 1988-04-27 | 1990-02-20 | General Electric Company | Low noise, high frequency synchronous rectifier |
JPH0783118B2 (ja) * | 1988-06-08 | 1995-09-06 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
JPH0291974A (ja) * | 1988-09-29 | 1990-03-30 | Nippon Telegr & Teleph Corp <Ntt> | 半導体装置 |
JPH0291974U (ko) * | 1988-12-28 | 1990-07-20 | ||
US4900692A (en) | 1989-04-24 | 1990-02-13 | Motorola, Inc. | Method of forming an oxide liner and active area mask for selective epitaxial growth in an isolation trench |
US4974050A (en) | 1989-05-30 | 1990-11-27 | Motorola Inc. | High voltage semiconductor device and method |
US4927772A (en) | 1989-05-30 | 1990-05-22 | General Electric Company | Method of making high breakdown voltage semiconductor device |
JPH0750791B2 (ja) | 1989-09-20 | 1995-05-31 | 株式会社日立製作所 | 半導体整流ダイオード及びそれを使つた電源装置並びに電子計算機 |
US5038266A (en) | 1990-01-02 | 1991-08-06 | General Electric Company | High efficiency, regulated DC supply |
JP2730271B2 (ja) | 1990-03-07 | 1998-03-25 | 住友電気工業株式会社 | 半導体装置 |
US5225376A (en) | 1990-05-02 | 1993-07-06 | Nec Electronics, Inc. | Polysilicon taper process using spin-on glass |
JPH0429372A (ja) | 1990-05-24 | 1992-01-31 | Mitsubishi Electric Corp | 半導体光検出装置 |
JP2682202B2 (ja) | 1990-06-08 | 1997-11-26 | 日本電気株式会社 | 電界効果トランジスタを用いた整流回路 |
US5184198A (en) | 1990-08-15 | 1993-02-02 | Solid State Devices, Inc. | Special geometry Schottky diode |
US5109256A (en) | 1990-08-17 | 1992-04-28 | National Semiconductor Corporation | Schottky barrier diodes and Schottky barrier diode-clamped transistors and method of fabrication |
JP3074736B2 (ja) | 1990-12-28 | 2000-08-07 | 富士電機株式会社 | 半導体装置 |
US5168331A (en) | 1991-01-31 | 1992-12-01 | Siliconix Incorporated | Power metal-oxide-semiconductor field effect transistor |
US5268833A (en) | 1991-05-14 | 1993-12-07 | U.S. Philips Corporation | Rectifier circuit including FETs of the same conductivity type |
JP2682272B2 (ja) * | 1991-06-27 | 1997-11-26 | 三菱電機株式会社 | 絶縁ゲート型トランジスタ |
US5254869A (en) | 1991-06-28 | 1993-10-19 | Linear Technology Corporation | Aluminum alloy/silicon chromium sandwich schottky diode |
FR2679068B1 (fr) | 1991-07-10 | 1997-04-25 | France Telecom | Procede de fabrication d'un transistor a effet de champ vertical, et transistor obtenu par ce procede. |
JP2858383B2 (ja) | 1991-10-14 | 1999-02-17 | 株式会社デンソー | 半導体装置の製造方法 |
US5475245A (en) | 1992-03-23 | 1995-12-12 | Rohm Co., Ltd. | Field-effect voltage regulator diode |
US5510641A (en) * | 1992-06-01 | 1996-04-23 | University Of Washington | Majority carrier power diode |
US5258640A (en) | 1992-09-02 | 1993-11-02 | International Business Machines Corporation | Gate controlled Schottky barrier diode |
JP2809253B2 (ja) | 1992-10-02 | 1998-10-08 | 富士電機株式会社 | 注入制御型ショットキーバリア整流素子 |
US5506421A (en) | 1992-11-24 | 1996-04-09 | Cree Research, Inc. | Power MOSFET in silicon carbide |
US5396087A (en) | 1992-12-14 | 1995-03-07 | North Carolina State University | Insulated gate bipolar transistor with reduced susceptibility to parasitic latch-up |
US5365102A (en) | 1993-07-06 | 1994-11-15 | North Carolina State University | Schottky barrier rectifier with MOS trench |
US5479626A (en) | 1993-07-26 | 1995-12-26 | Rockwell International Corporation | Signal processor contexts with elemental and reserved group addressing |
US5426325A (en) | 1993-08-04 | 1995-06-20 | Siliconix Incorporated | Metal crossover in high voltage IC with graduated doping control |
JP2910573B2 (ja) * | 1993-09-10 | 1999-06-23 | 株式会社日立製作所 | 電界効果トランジスタ及びその製造方法 |
JP3396553B2 (ja) * | 1994-02-04 | 2003-04-14 | 三菱電機株式会社 | 半導体装置の製造方法及び半導体装置 |
US5780324A (en) | 1994-03-30 | 1998-07-14 | Denso Corporation | Method of manufacturing a vertical semiconductor device |
US5536676A (en) | 1995-04-03 | 1996-07-16 | National Science Council | Low temperature formation of silicided shallow junctions by ion implantation into thin silicon films |
KR0154702B1 (ko) | 1995-06-09 | 1998-10-15 | 김광호 | 항복전압을 향상시킨 다이오드 제조 방법 |
JP3230650B2 (ja) * | 1996-03-27 | 2001-11-19 | 富士電機株式会社 | 炭化けい素半導体基板とその製造方法およびその基板を用いた炭化けい素半導体素子 |
US5744994A (en) * | 1996-05-15 | 1998-04-28 | Siliconix Incorporated | Three-terminal power mosfet switch for use as synchronous rectifier or voltage clamp |
US5818084A (en) | 1996-05-15 | 1998-10-06 | Siliconix Incorporated | Pseudo-Schottky diode |
US5886383A (en) | 1997-01-10 | 1999-03-23 | International Rectifier Corporation | Integrated schottky diode and mosgated device |
US5793089A (en) * | 1997-01-10 | 1998-08-11 | Advanced Micro Devices, Inc. | Graded MOS transistor junction formed by aligning a sequence of implants to a selectively removable polysilicon sidewall space and oxide thermally grown thereon |
US5825079A (en) | 1997-01-23 | 1998-10-20 | Luminous Intent, Inc. | Semiconductor diodes having low forward conduction voltage drop and low reverse current leakage |
US5898982A (en) | 1997-05-30 | 1999-05-04 | Luminous Intent, Inc. | Thin film capacitors |
JPH11307786A (ja) * | 1998-04-27 | 1999-11-05 | Citizen Watch Co Ltd | 半導体ダイオード |
US6186408B1 (en) | 1999-05-28 | 2001-02-13 | Advanced Power Devices, Inc. | High cell density power rectifier |
JP2001085685A (ja) * | 1999-09-13 | 2001-03-30 | Shindengen Electric Mfg Co Ltd | トランジスタ |
-
2001
- 2001-05-23 US US09/864,436 patent/US6537921B2/en not_active Expired - Fee Related
-
2002
- 2002-05-08 AT AT02734352T patent/ATE516596T1/de not_active IP Right Cessation
- 2002-05-08 CN CNB028147952A patent/CN1309092C/zh not_active Expired - Fee Related
- 2002-05-08 CA CA002447722A patent/CA2447722A1/en not_active Abandoned
- 2002-05-08 EP EP02734352A patent/EP1393382B1/en not_active Expired - Lifetime
- 2002-05-08 IL IL15884502A patent/IL158845A0/xx active IP Right Grant
- 2002-05-08 WO PCT/US2002/014848 patent/WO2002095835A2/en active IP Right Grant
- 2002-05-08 JP JP2002592200A patent/JP4511118B2/ja not_active Expired - Fee Related
- 2002-05-08 AU AU2002305526A patent/AU2002305526B8/en not_active Ceased
- 2002-05-08 BR BR0209916-0A patent/BR0209916A/pt not_active IP Right Cessation
- 2002-05-08 KR KR1020037015308A patent/KR100883873B1/ko not_active IP Right Cessation
- 2002-05-08 EP EP10182553A patent/EP2273554A1/en not_active Withdrawn
- 2002-05-23 TW TW091110875A patent/TW558839B/zh not_active IP Right Cessation
-
2003
- 2003-11-12 IL IL158845A patent/IL158845A/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP1393382B1 (en) | 2011-07-13 |
TW558839B (en) | 2003-10-21 |
CA2447722A1 (en) | 2002-11-28 |
AU2002305526B8 (en) | 2007-02-15 |
BR0209916A (pt) | 2004-08-31 |
EP1393382A2 (en) | 2004-03-03 |
IL158845A0 (en) | 2004-05-12 |
CN1545736A (zh) | 2004-11-10 |
US20020177324A1 (en) | 2002-11-28 |
AU2002305526B2 (en) | 2006-10-12 |
IL158845A (en) | 2007-12-03 |
WO2002095835A2 (en) | 2002-11-28 |
CN1309092C (zh) | 2007-04-04 |
JP2004531065A (ja) | 2004-10-07 |
EP2273554A1 (en) | 2011-01-12 |
AU2002305526A1 (en) | 2002-12-03 |
WO2002095835A3 (en) | 2003-07-31 |
US6537921B2 (en) | 2003-03-25 |
KR20040005982A (ko) | 2004-01-16 |
KR100883873B1 (ko) | 2009-02-17 |
ATE516596T1 (de) | 2011-07-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4511118B2 (ja) | 縦形の金属/酸化物/シリコン型電界効果ダイオード | |
KR100453264B1 (ko) | 낮은 순방향 전도 전압강하와 낮은 역방향 전류 누설을 갖는반도체 다이오드 | |
US6498367B1 (en) | Discrete integrated circuit rectifier device | |
US6580150B1 (en) | Vertical junction field effect semiconductor diodes | |
JP5055813B2 (ja) | Soi横型半導体装置 | |
US9048308B2 (en) | Regenerative building block and diode bridge rectifier and methods | |
WO2001078134A1 (en) | Method of fabricating power rectifier device to vary operating parameters and resulting device | |
WO2000060654A1 (en) | Power rectifier device | |
JPH1197716A (ja) | Mosコントロールダイオード及びその製造方法 | |
US20100029048A1 (en) | Field Effect Semiconductor Diodes and Processing Techniques | |
US6420757B1 (en) | Semiconductor diodes having low forward conduction voltage drop, low reverse current leakage, and high avalanche energy capability | |
US6433370B1 (en) | Method and apparatus for cylindrical semiconductor diodes | |
WO2010030400A1 (en) | Regenerative building block and diode bridge rectifier and methods | |
JPH06342913A (ja) | 半導体装置 | |
WO2011049552A1 (en) | Field-effect semiconductor diode and methods of making the same | |
TW201115747A (en) | Field effect semiconductor diodes and processing techniques |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20050422 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20050422 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20081202 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20090302 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20090309 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090402 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090811 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090915 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20100406 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20100506 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130514 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |