CN1545736A - 垂直金属氧化物半导体场效应二极管 - Google Patents
垂直金属氧化物半导体场效应二极管 Download PDFInfo
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- CN1545736A CN1545736A CNA028147952A CN02814795A CN1545736A CN 1545736 A CN1545736 A CN 1545736A CN A028147952 A CNA028147952 A CN A028147952A CN 02814795 A CN02814795 A CN 02814795A CN 1545736 A CN1545736 A CN 1545736A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 107
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 23
- 229910052710 silicon Inorganic materials 0.000 title claims description 23
- 239000010703 silicon Substances 0.000 title claims description 23
- 229910044991 metal oxide Inorganic materials 0.000 title abstract description 21
- 150000004706 metal oxides Chemical class 0.000 title abstract description 21
- 230000005669 field effect Effects 0.000 title abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims description 33
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- 229910052751 metal Inorganic materials 0.000 claims description 14
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- 229920005591 polysilicon Polymers 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
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- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
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- 238000009792 diffusion process Methods 0.000 description 2
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- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 229910008484 TiSi Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0814—Diodes only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
- H01L29/0623—Buried supplementary region, e.g. buried guard ring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Semiconductor Memories (AREA)
- Furan Compounds (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/864,436 | 2001-05-23 | ||
US09/864,436 US6537921B2 (en) | 2001-05-23 | 2001-05-23 | Vertical metal oxide silicon field effect semiconductor diodes |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1545736A true CN1545736A (zh) | 2004-11-10 |
CN1309092C CN1309092C (zh) | 2007-04-04 |
Family
ID=25343277
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB028147952A Expired - Fee Related CN1309092C (zh) | 2001-05-23 | 2002-05-08 | 垂直金属氧化物半导体场效应二极管及制造方法 |
Country Status (12)
Country | Link |
---|---|
US (1) | US6537921B2 (zh) |
EP (2) | EP1393382B1 (zh) |
JP (1) | JP4511118B2 (zh) |
KR (1) | KR100883873B1 (zh) |
CN (1) | CN1309092C (zh) |
AT (1) | ATE516596T1 (zh) |
AU (1) | AU2002305526B8 (zh) |
BR (1) | BR0209916A (zh) |
CA (1) | CA2447722A1 (zh) |
IL (2) | IL158845A0 (zh) |
TW (1) | TW558839B (zh) |
WO (1) | WO2002095835A2 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102064201A (zh) * | 2010-10-22 | 2011-05-18 | 深圳市芯威科技有限公司 | 浅槽金属氧化物半导体二极管 |
Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7030680B2 (en) * | 2003-02-26 | 2006-04-18 | Integrated Discrete Devices, Llc | On chip power supply |
DE10308313B4 (de) * | 2003-02-26 | 2010-08-19 | Siemens Ag | Halbleiterdiode, elektronisches Bauteil, Spannungszwischenkreisumrichter und Steuerverfahren |
US7105391B2 (en) * | 2004-03-04 | 2006-09-12 | International Business Machines Corporation | Planar pedestal multi gate device |
JP2006165468A (ja) * | 2004-12-10 | 2006-06-22 | Nec Electronics Corp | 半導体集積回路 |
JP4790340B2 (ja) * | 2005-07-25 | 2011-10-12 | パナソニック株式会社 | 半導体装置 |
US7615812B1 (en) * | 2006-03-23 | 2009-11-10 | Integrated Discrete Devices, Llc | Field effect semiconductor diodes and processing techniques |
US8148748B2 (en) | 2007-09-26 | 2012-04-03 | Stmicroelectronics N.V. | Adjustable field effect rectifier |
US8633521B2 (en) | 2007-09-26 | 2014-01-21 | Stmicroelectronics N.V. | Self-bootstrapping field effect diode structures and methods |
WO2009042807A2 (en) | 2007-09-26 | 2009-04-02 | Lakota Technologies, Inc. | Adjustable field effect rectifier |
US8643055B2 (en) | 2007-09-26 | 2014-02-04 | Stmicroelectronics N.V. | Series current limiter device |
KR100975404B1 (ko) * | 2008-02-28 | 2010-08-11 | 주식회사 종합건축사사무소근정 | 블록담장용 지주 및 이의 시공방법 |
KR100955175B1 (ko) * | 2008-03-13 | 2010-04-29 | 주식회사 하이닉스반도체 | 수직형 반도체 소자 및 그 제조 방법 |
CN102037548B (zh) * | 2008-04-28 | 2014-04-23 | 意法半导体有限公司 | 具有集成场效应整流器的mosfet |
KR101010121B1 (ko) * | 2008-07-04 | 2011-01-24 | 주식회사 하이닉스반도체 | 반도체 소자의 제조방법 |
US8445947B2 (en) * | 2008-07-04 | 2013-05-21 | Stmicroelectronics (Rousset) Sas | Electronic circuit having a diode-connected MOS transistor with an improved efficiency |
WO2011049552A1 (en) * | 2009-10-19 | 2011-04-28 | Integrated Discrete Devices, Llc | Field-effect semiconductor diode and methods of making the same |
US9331065B2 (en) | 2011-05-17 | 2016-05-03 | Semiconductor Components Industries, Llc | Semiconductor diode and method of manufacture |
US8502336B2 (en) | 2011-05-17 | 2013-08-06 | Semiconductor Components Industries, Llc | Semiconductor diode and method of manufacture |
FR2982416B1 (fr) | 2011-11-03 | 2014-01-03 | St Microelectronics Sa | Dispositif electronique de protection contre les decharges electrostatiques |
FR2984604B1 (fr) | 2011-12-16 | 2014-01-17 | St Microelectronics Sa | Dispositif electronique compact de protection contre les decharges electrostatiques. |
JP6396294B2 (ja) * | 2012-07-05 | 2018-09-26 | リテルヒューズ・インク | 過渡電圧回路保護のためのクローバーデバイス |
US9716151B2 (en) | 2013-09-24 | 2017-07-25 | Semiconductor Components Industries, Llc | Schottky device having conductive trenches and a multi-concentration doping profile therebetween |
US9263598B2 (en) | 2014-02-14 | 2016-02-16 | Semiconductor Components Industries, Llc | Schottky device and method of manufacture |
US9716187B2 (en) | 2015-03-06 | 2017-07-25 | Semiconductor Components Industries, Llc | Trench semiconductor device having multiple trench depths and method |
US10431699B2 (en) | 2015-03-06 | 2019-10-01 | Semiconductor Components Industries, Llc | Trench semiconductor device having multiple active trench depths and method |
US9391065B1 (en) | 2015-06-29 | 2016-07-12 | Globalfoundries Inc. | Electrostatic discharge and passive structures integrated in a vertical gate fin-type field effect diode |
DE102018201030A1 (de) | 2018-01-24 | 2019-07-25 | Kardion Gmbh | Magnetkuppelelement mit magnetischer Lagerungsfunktion |
US10388801B1 (en) * | 2018-01-30 | 2019-08-20 | Semiconductor Components Industries, Llc | Trench semiconductor device having shaped gate dielectric and gate electrode structures and method |
US10608122B2 (en) | 2018-03-13 | 2020-03-31 | Semicondutor Components Industries, Llc | Schottky device and method of manufacture |
DE102018206727A1 (de) * | 2018-05-02 | 2019-11-07 | Kardion Gmbh | Energieübertragungssystem und Empfangseinheit zur drahtlosen transkutanen Energieübertragung |
DE102018206724A1 (de) | 2018-05-02 | 2019-11-07 | Kardion Gmbh | Energieübertragungssystem und Verfahren zur drahtlosen Energieübertragung |
DE102018206725A1 (de) | 2018-05-02 | 2019-11-07 | Kardion Gmbh | Empfangseinheit, Sendeeinheit, Energieübertragungssystem und Verfahren zur drahtlosen Energieübertragung |
US10566466B2 (en) | 2018-06-27 | 2020-02-18 | Semiconductor Components Industries, Llc | Termination structure for insulated gate semiconductor device and method |
US10439075B1 (en) | 2018-06-27 | 2019-10-08 | Semiconductor Components Industries, Llc | Termination structure for insulated gate semiconductor device and method |
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- 2001-05-23 US US09/864,436 patent/US6537921B2/en not_active Expired - Fee Related
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- 2002-05-08 KR KR1020037015308A patent/KR100883873B1/ko not_active IP Right Cessation
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102064201A (zh) * | 2010-10-22 | 2011-05-18 | 深圳市芯威科技有限公司 | 浅槽金属氧化物半导体二极管 |
Also Published As
Publication number | Publication date |
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EP1393382B1 (en) | 2011-07-13 |
TW558839B (en) | 2003-10-21 |
CA2447722A1 (en) | 2002-11-28 |
AU2002305526B8 (en) | 2007-02-15 |
BR0209916A (pt) | 2004-08-31 |
EP1393382A2 (en) | 2004-03-03 |
JP4511118B2 (ja) | 2010-07-28 |
IL158845A0 (en) | 2004-05-12 |
US20020177324A1 (en) | 2002-11-28 |
AU2002305526B2 (en) | 2006-10-12 |
IL158845A (en) | 2007-12-03 |
WO2002095835A2 (en) | 2002-11-28 |
CN1309092C (zh) | 2007-04-04 |
JP2004531065A (ja) | 2004-10-07 |
EP2273554A1 (en) | 2011-01-12 |
AU2002305526A1 (en) | 2002-12-03 |
WO2002095835A3 (en) | 2003-07-31 |
US6537921B2 (en) | 2003-03-25 |
KR20040005982A (ko) | 2004-01-16 |
KR100883873B1 (ko) | 2009-02-17 |
ATE516596T1 (de) | 2011-07-15 |
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