JP4451488B2 - 半導体素子の転写方法及び半導体装置の製造方法 - Google Patents
半導体素子の転写方法及び半導体装置の製造方法 Download PDFInfo
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- JP4451488B2 JP4451488B2 JP2008506849A JP2008506849A JP4451488B2 JP 4451488 B2 JP4451488 B2 JP 4451488B2 JP 2008506849 A JP2008506849 A JP 2008506849A JP 2008506849 A JP2008506849 A JP 2008506849A JP 4451488 B2 JP4451488 B2 JP 4451488B2
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- 239000004065 semiconductor Substances 0.000 title claims description 413
- 238000000034 method Methods 0.000 title claims description 164
- 238000012546 transfer Methods 0.000 title claims description 132
- 238000004519 manufacturing process Methods 0.000 title claims description 63
- 239000000758 substrate Substances 0.000 claims description 724
- 239000010410 layer Substances 0.000 claims description 120
- 230000007547 defect Effects 0.000 claims description 85
- 239000013078 crystal Substances 0.000 claims description 83
- 150000002500 ions Chemical class 0.000 claims description 38
- 238000010438 heat treatment Methods 0.000 claims description 37
- 238000005468 ion implantation Methods 0.000 claims description 34
- 238000011084 recovery Methods 0.000 claims description 34
- 238000005530 etching Methods 0.000 claims description 30
- 229910052739 hydrogen Inorganic materials 0.000 claims description 28
- 239000001257 hydrogen Substances 0.000 claims description 28
- -1 hydrogen ions Chemical class 0.000 claims description 28
- 239000007789 gas Substances 0.000 claims description 20
- 238000000926 separation method Methods 0.000 claims description 15
- 230000008569 process Effects 0.000 claims description 14
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 7
- 229910021426 porous silicon Inorganic materials 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000012790 adhesive layer Substances 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 158
- 239000010408 film Substances 0.000 description 141
- 239000010409 thin film Substances 0.000 description 76
- 235000012431 wafers Nutrition 0.000 description 53
- 239000011521 glass Substances 0.000 description 25
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 20
- 239000000853 adhesive Substances 0.000 description 20
- 238000012545 processing Methods 0.000 description 20
- 229910004298 SiO 2 Inorganic materials 0.000 description 18
- 230000001070 adhesive effect Effects 0.000 description 18
- 229910052751 metal Inorganic materials 0.000 description 17
- 239000002184 metal Substances 0.000 description 17
- 238000003776 cleavage reaction Methods 0.000 description 16
- 239000012535 impurity Substances 0.000 description 16
- 230000007017 scission Effects 0.000 description 16
- 239000002585 base Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 11
- 238000002513 implantation Methods 0.000 description 9
- 239000004973 liquid crystal related substance Substances 0.000 description 9
- 230000003647 oxidation Effects 0.000 description 9
- 238000007254 oxidation reaction Methods 0.000 description 9
- 230000001681 protective effect Effects 0.000 description 9
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- 229920003023 plastic Polymers 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 239000004033 plastic Substances 0.000 description 7
- 238000004151 rapid thermal annealing Methods 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910015900 BF3 Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910008051 Si-OH Inorganic materials 0.000 description 2
- 229910006358 Si—OH Inorganic materials 0.000 description 2
- 238000005411 Van der Waals force Methods 0.000 description 2
- 238000002679 ablation Methods 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 2
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000005368 silicate glass Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- 244000025254 Cannabis sativa Species 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- 229910002808 Si–O–Si Inorganic materials 0.000 description 1
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000001887 electron backscatter diffraction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- WQGWDDDVZFFDIG-UHFFFAOYSA-N pyrogallol Chemical compound OC1=CC=CC(O)=C1O WQGWDDDVZFFDIG-UHFFFAOYSA-N 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000004439 roughness measurement Methods 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
- H01L27/1266—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/66772—Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- High Energy & Nuclear Physics (AREA)
- Ceramic Engineering (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006089402 | 2006-03-28 | ||
| JP2006089402 | 2006-03-28 | ||
| PCT/JP2006/324845 WO2007111008A1 (ja) | 2006-03-28 | 2006-12-13 | 半導体素子の転写方法及び半導体装置の製造方法並びに半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2007111008A1 JPWO2007111008A1 (ja) | 2009-08-06 |
| JP4451488B2 true JP4451488B2 (ja) | 2010-04-14 |
Family
ID=38540943
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008506849A Expired - Fee Related JP4451488B2 (ja) | 2006-03-28 | 2006-12-13 | 半導体素子の転写方法及び半導体装置の製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7989304B2 (zh) |
| JP (1) | JP4451488B2 (zh) |
| CN (1) | CN101401195B (zh) |
| WO (1) | WO2007111008A1 (zh) |
Families Citing this family (222)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009510216A (ja) * | 2005-09-29 | 2009-03-12 | ダウ・コーニング・コーポレイション | 金属基材からの高温用フィルムおよび／またはデバイスの剥離方法 |
| US20100244136A1 (en) * | 2007-12-27 | 2010-09-30 | Sharp Kabushiki Kaisha | Semiconductor device, single-crystal semiconductor thin film-including substrate, and production methods thereof |
| WO2009101662A1 (ja) * | 2008-02-13 | 2009-08-20 | Sharp Kabushiki Kaisha | 半導体装置の製造方法、半導体装置及び表示装置 |
| KR100882991B1 (ko) * | 2008-08-06 | 2009-02-12 | 주식회사 동부하이텍 | 후면 수광 이미지센서의 제조방법 |
| JP5489512B2 (ja) * | 2009-04-06 | 2014-05-14 | キヤノン株式会社 | 半導体装置の製造方法 |
| WO2010116694A2 (en) | 2009-04-06 | 2010-10-14 | Canon Kabushiki Kaisha | Method of manufacturing semiconductor device |
| US8395191B2 (en) | 2009-10-12 | 2013-03-12 | Monolithic 3D Inc. | Semiconductor device and structure |
| US20110031997A1 (en) * | 2009-04-14 | 2011-02-10 | NuPGA Corporation | Method for fabrication of a semiconductor device and structure |
| US8669778B1 (en) | 2009-04-14 | 2014-03-11 | Monolithic 3D Inc. | Method for design and manufacturing of a 3D semiconductor device |
| US8362482B2 (en) * | 2009-04-14 | 2013-01-29 | Monolithic 3D Inc. | Semiconductor device and structure |
| US8754533B2 (en) * | 2009-04-14 | 2014-06-17 | Monolithic 3D Inc. | Monolithic three-dimensional semiconductor device and structure |
| US8384426B2 (en) * | 2009-04-14 | 2013-02-26 | Monolithic 3D Inc. | Semiconductor device and structure |
| US20110199116A1 (en) * | 2010-02-16 | 2011-08-18 | NuPGA Corporation | Method for fabrication of a semiconductor device and structure |
| US8427200B2 (en) | 2009-04-14 | 2013-04-23 | Monolithic 3D Inc. | 3D semiconductor device |
| US8058137B1 (en) | 2009-04-14 | 2011-11-15 | Monolithic 3D Inc. | Method for fabrication of a semiconductor device and structure |
| US9509313B2 (en) | 2009-04-14 | 2016-11-29 | Monolithic 3D Inc. | 3D semiconductor device |
| US8373439B2 (en) | 2009-04-14 | 2013-02-12 | Monolithic 3D Inc. | 3D semiconductor device |
| US8362800B2 (en) | 2010-10-13 | 2013-01-29 | Monolithic 3D Inc. | 3D semiconductor device including field repairable logics |
| US9577642B2 (en) | 2009-04-14 | 2017-02-21 | Monolithic 3D Inc. | Method to form a 3D semiconductor device |
| US8378715B2 (en) | 2009-04-14 | 2013-02-19 | Monolithic 3D Inc. | Method to construct systems |
| US7986042B2 (en) | 2009-04-14 | 2011-07-26 | Monolithic 3D Inc. | Method for fabrication of a semiconductor device and structure |
| US9711407B2 (en) * | 2009-04-14 | 2017-07-18 | Monolithic 3D Inc. | Method of manufacturing a three dimensional integrated circuit by transfer of a mono-crystalline layer |
| US8405420B2 (en) | 2009-04-14 | 2013-03-26 | Monolithic 3D Inc. | System comprising a semiconductor device and structure |
| JP5534763B2 (ja) * | 2009-09-25 | 2014-07-02 | 株式会社東芝 | 半導体発光装置の製造方法及び半導体発光装置 |
| FR2950734B1 (fr) * | 2009-09-28 | 2011-12-09 | Soitec Silicon On Insulator | Procede de collage et de transfert d'une couche |
| US12027518B1 (en) | 2009-10-12 | 2024-07-02 | Monolithic 3D Inc. | 3D semiconductor devices and structures with metal layers |
| US10910364B2 (en) | 2009-10-12 | 2021-02-02 | Monolitaic 3D Inc. | 3D semiconductor device |
| US11374118B2 (en) | 2009-10-12 | 2022-06-28 | Monolithic 3D Inc. | Method to form a 3D integrated circuit |
| US9099424B1 (en) | 2012-08-10 | 2015-08-04 | Monolithic 3D Inc. | Semiconductor system, device and structure with heat removal |
| US10388863B2 (en) | 2009-10-12 | 2019-08-20 | Monolithic 3D Inc. | 3D memory device and structure |
| US10354995B2 (en) | 2009-10-12 | 2019-07-16 | Monolithic 3D Inc. | Semiconductor memory device and structure |
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| CN110556399B (zh) * | 2018-05-31 | 2020-10-27 | 浙江清华柔性电子技术研究院 | 柔性器件的过渡装置、制备方法及柔性器件贴片的方法 |
| US11763864B2 (en) | 2019-04-08 | 2023-09-19 | Monolithic 3D Inc. | 3D memory semiconductor devices and structures with bit-line pillars |
| US11018156B2 (en) | 2019-04-08 | 2021-05-25 | Monolithic 3D Inc. | 3D memory semiconductor devices and structures |
| US11158652B1 (en) | 2019-04-08 | 2021-10-26 | Monolithic 3D Inc. | 3D memory semiconductor devices and structures |
| US10892016B1 (en) | 2019-04-08 | 2021-01-12 | Monolithic 3D Inc. | 3D memory semiconductor devices and structures |
| US11296106B2 (en) | 2019-04-08 | 2022-04-05 | Monolithic 3D Inc. | 3D memory semiconductor devices and structures |
| US11404543B2 (en) * | 2020-06-19 | 2022-08-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH04354371A (ja) * | 1991-05-31 | 1992-12-08 | Nec Corp | 半導体装置の構造およびその製造方法 |
| JP3324469B2 (ja) | 1997-09-26 | 2002-09-17 | 信越半導体株式会社 | Ｓｏｉウエーハの製造方法ならびにこの方法で製造されるｓｏｉウエーハ |
| JP3804349B2 (ja) * | 1999-08-06 | 2006-08-02 | セイコーエプソン株式会社 | 薄膜デバイス装置の製造方法、アクティブマトリクス基板の製造方法、および電気光学装置 |
| JP4631113B2 (ja) * | 1999-10-26 | 2011-02-16 | 株式会社デンソー | 半導体装置の製造方法 |
| FR2823599B1 (fr) * | 2001-04-13 | 2004-12-17 | Commissariat Energie Atomique | Substrat demomtable a tenue mecanique controlee et procede de realisation |
| FR2852974A1 (fr) * | 2003-03-31 | 2004-10-01 | Soitec Silicon On Insulator | Procede de fabrication de cristaux monocristallins |
| JP2005026472A (ja) | 2003-07-02 | 2005-01-27 | Sharp Corp | 半導体装置の製造方法 |
| JP4610982B2 (ja) * | 2003-11-11 | 2011-01-12 | シャープ株式会社 | 半導体装置の製造方法 |
| JP5008266B2 (ja) * | 2004-03-25 | 2012-08-22 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US7282380B2 (en) | 2004-03-25 | 2007-10-16 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| JP4175650B2 (ja) * | 2004-08-26 | 2008-11-05 | シャープ株式会社 | 半導体装置の製造方法 |
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| Publication number | Publication date |
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| WO2007111008A1 (ja) | 2007-10-04 |
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| CN101401195B (zh) | 2010-11-03 |
| JPWO2007111008A1 (ja) | 2009-08-06 |
| US7989304B2 (en) | 2011-08-02 |
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