CN111712907A - 制造具有无载体模腔的扇出型封装的方法 - Google Patents

制造具有无载体模腔的扇出型封装的方法 Download PDF

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CN111712907A
CN111712907A CN201880088794.8A CN201880088794A CN111712907A CN 111712907 A CN111712907 A CN 111712907A CN 201880088794 A CN201880088794 A CN 201880088794A CN 111712907 A CN111712907 A CN 111712907A
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die
frame member
frame
molding compound
rdl
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沈明浩
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Chengdu Yisiwei System Integrated Circuit Co ltd
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Didro Technology Bvi Co ltd
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  • Engineering & Computer Science (AREA)
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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
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Abstract

公开了一种制造半导体器件的方法，包括模制和固化具有上侧的框架构件，该上侧限定凹口的阵列。然后将半导体管芯在相应的凹口内粘附到框架构件。框架构件的上侧和管芯覆盖有RDL。RDL的形成包括沉积介电材料，介电材料还填充凹口内管芯与框架构件之间的间隙。框架构件能够被模制为其厚度所提供的机械强度能够抵抗在RDL形成期间或其他制造过程期间例如由于管芯的翘曲而导致的管芯损坏。在RDL完成之后，能够从框架构件的下侧去除该过量的框架构件材料，并且能够将结构切割，从而将管芯分成相应的半导体器件。

Description

制造具有无载体模腔的扇出型封装的方法
相关申请的交叉引用
本申请要求2018年2月9日提交的题为“扇出型模腔”的美国临时申请No.62/628,500的优先权，所述临时申请通过引用全部并入本文。
技术领域
本公开涉及半导体封装技术。
背景技术
半导体器件普遍存在于现代电子产品中。半导体器件中的电子部件数量和密度各不相同。离散半导体器件通常包含一种类型的电子部件，例如发光二极管(LED)、小信号晶体管、电阻器、电容器、电感器和功率金属氧化物半导体场效应晶体管(MOSFET)。集成半导体器件通常包含数百至数百万个电子部件。集成半导体器件的示例包括微控制器、微处理器、电荷耦合器件(CCD)、太阳能电池和数字微镜器件(DMD)。
半导体器件执行多种功能，例如信号处理，高速计算，发送和接收电磁信号，控制电子器件，将太阳光转换成电以及为电视显示器创建可视投影。半导体器件应用在娱乐、通信、功率转换、网络、计算机和消费产品领域中。半导体器件还应用于军事应用、航空、汽车、工业控制器和办公设备。
半导体器件利用半导体材料的电气特性。半导体材料的原子结构允许通过施加电场或基极电流或通过掺杂过程来控制其导电性。掺杂将杂质引入半导体材料中，以操控和控制半导体器件的导电性。
半导体器件包含有源电气结构和无源电气结构。有源结构(包括双极型和场效应晶体管)控制电流的流动。通过改变掺杂水平以及施加电场或基极电流，晶体管可以促进或限制电流的流动。无源结构(包括电阻器、电容器和电感器)在执行各种电气功能所需的电压和电流之间建立关系。无源结构和有源结构被电连接以形成电路，所述电路使半导体器件能够执行高速计算和其他有用功能。
半导体器件通常使用两个复杂的制造工艺来制造，即，前端制造和后端制造，每个制造工艺均可能涉及数百个步骤。前端制造涉及在半导体晶圆的表面上形成多个管芯。每个半导体管芯通常是相同的，并且包含通过电连接有源部件和无源部件而形成的电路。后端制造涉及从完成的晶圆中分离出单个半导体管芯，并封装管芯以提供结构支持和环境隔离。
在整个说明书中，术语“管芯”、“半导体芯片”和“半导体管芯”可互换使用。本文中使用的术语“晶圆”包括根据本发明的具有在其上沉积层例如以形成电路结构的暴露表面的任何结构。
图1A至1E示出了用于制造具有再分布层(RDL)的半导体封装的典型方法的示意性横截面图。
参照图1A，多个半导体管芯100被放置在粘合剂层102上，而粘合剂层102又施加在载体基板104上。每个管芯100均包括由半导体材料(如砷化镓(GaAs)、氮化镓(GaN)、或硅(Si))制成的基板，该基板具有形成在其上(或其内)的集成电路。接着，如图1B所示，在半导体管芯100上方和粘合剂层102的暴露部分上沉积(或形成)密封材料106。然后，根据用作密封材料106的材料，执行固化工艺以至少部分地固化密封材料106。
在密封材料106固化之后，密封材料106变得部分刚性并形成密封结构。密封材料106的初始厚度大于期望的厚度。因此，密封材料106的暴露表面经历研磨(和/或抛光和/或磨蚀)工艺以暴露出管芯100，如图1C所示。在某些情况下，可以对密封材料106的表面进行化学机械抛光工艺。参照图1D，RDL层108形成在管芯100上方，包括与管芯100电连通的各种绝缘层和导电迹线。此外，可以形成与RDL层108电连通的接触结构(例如，焊球)110。参照图1E，然后将载体基板104和粘合剂层102从结构上剥离。从这里开始，可以将结构切割或切块成具有相应的管芯100的各个半导体器件。
诸如以上所述的封装过程具有诸多缺点。封装过程通常包括使用载体基板104，因为需要强力的机械支撑来防止翘曲。载体基板104的添加和去除向该过程添加了额外的步骤，从而增加了时间和制造成本。而且，使用了额外的密封剂来填充管芯100之间的间隙。由于研磨掉过量的密封剂的步骤，这也增加了制造费用并增加了制造时间。因此，业内存在对改进的封装过程的需求，该封装过程与这种现有过程相比可以减少成本和制造时间。
发明内容
根据本公开的一些实施例，一种制造半导体器件的方法包括：提供第一模制板和第二模制板，所述第一模制板和所述第二模制板被构造成形成具有多个凹口的模制结构。接下来，在第一和第二模制板之间分配模制化合物，然后将第一模制板和第二模制板放在一起，以使模制化合物在第一模制板和第二模制板之间成型。然后使模制化合物固化，从而形成包括多个框架结构的框架构件，该框架结构限定框架构件中的多个凹口。接下来，将多个管芯中的每一个在框架构件的相应凹口内粘附到框架构件，使得所述多个管芯中的每一个至少部分地被所述多个框架结构中的至少一个包围。在一些这样的实施例中，每个管芯具有相应的有源表面和至少一个相应的集成电路区域。接下来，在管芯上和框架构件的框架结构上形成再分布层(RDL)，从而形成多管芯面板。在一些这样的实施例中，RDL的形成可以包括在每个管芯与相应的相邻框架结构之间在所述多个凹口中形成介电结构。接下来，沿着所述多个框架结构将多层面板切割或切块以获得单独的半导体器件。
在一些实施例中，模制化合物可以包含环氧树脂。在一些这样的实施例中，模制化合物的固化可以包括固化环氧树脂。
在一些实施例中，该方法可以进一步包括在第一模制板和第二模制板之间提供离型膜，使得在第一模制板和第二模制板放在一起之前，该离型膜位于模制化合物与第一模制板和第二模制板中的至少一个之间。
在一些实施例中，框架构件的所述多个凹口被布置在框架构件的第一侧上，并且其中，该方法进一步包括从框架构件的第二侧去除框架构件的材料，其中第二侧与框架构件的第一侧相反。
在一些实施例中，所述多个管芯的每一个可以包括硅。
在一些实施例中，RDL层包括电连接到相应管芯的导电结构。
根据本公开的一些实施例，一种制造半导体器件的方法包括：提供多个模制板，所述多个模制板被构造成形成具有第一凹口和第二凹口的模制结构。接下来，使用所述多个模制板将模制化合物成形，然后固化模制化合物，从而形成包括多个框架结构的框架构件，其中所述多个框架结构限定了框架构件中的第一和第二凹口。接下来，将第一管芯和第二管芯分别在框架构件的第一凹口和第二凹口内粘附到框架构件，使得第一管芯和第二管芯中的每一个至少部分地被所述多个框架结构中的至少一个包围。在一些实施例中，第一管芯和第二管芯中的每一个具有相应的有源表面和至少一个相应的集成电路区域。接下来，在第一管芯和第二管芯上以及框架构件的框架结构上形成再分布层(RDL)，从而形成多管芯面板。在一些实施例中，RDL的形成可以包括在第一管芯和第二管芯中的每一个与相应的相邻框架结构之间在第一凹口和第二凹口中形成介电结构。接下来，沿着所述多个框架结构将多层面板切割或切块以获得单独的半导体器件。
在一些实施例中，模制化合物包含环氧树脂。在一些这样的实施例中，模制化合物的固化可以包括固化环氧树脂。
在一些实施例中，该方法可以进一步包括在所述多个模制板中的至少一个附近提供离型膜，使得在模制化合物成型之前，该离型膜位于模制化合物与所述多个模制板中的所述至少一个之间。
在一些实施例中，框架构件的第一凹口和第二凹口被布置在框架构件的第一侧上。在一些这样的实施例中，该方法可以进一步包括从框架构件的第二侧去除框架构件的材料，其中第二侧与框架构件的第一侧相反。
在一些实施例中，第一管芯和第二管芯中的每一个都包括硅。
在一些实施例中，RDL层包括电连接到第一管芯和第二管芯中的至少一个的导电结构。
根据本公开的一些实施例，一种半导体器件包括具有有源表面和至少一个集成电路区域的管芯。该器件还包括邻近管芯的框架结构和至少部分地置于管芯和框架结构之间的介电结构。该器件还包括在管芯上、在框架结构上和在介电结构上的再分布层(RDL)。在一些这样的实施例中，RDL电连接到管芯。
在一些实施例中，框架结构可以包括模制化合物。在一些这样的实施例中，模制化合物可以包括环氧树脂。
在一些实施例中，管芯包括硅。
在一些实施例中，RDL至少包括介电层和在介电层中的金属特征。在一些这样的实施例中，金属特征中的至少一个电连接到管芯。
附图说明
图1A-1E示出了用于制造具有再分布层(RDL)的半导体封装的典型方法的示意性横截面图。
图2A至图2D示出了根据本公开的实施例的用于制造晶圆级封装的示例性方法的示意性横截面图。
图3示出了根据本公开的实施例的框架构件的实施例的平面图。
图4示出了图2D的一部分4的放大图。
图5是示出根据本公开的用于制造晶圆级封装的示例性方法的工艺流程图。
具体实施方式
本公开涉及晶圆级封装工艺。例如，在半导体晶圆封装工艺中，晶圆可以是其上具有数千个芯片的半导体晶圆或器件晶圆。薄晶圆，特别是超薄晶圆(厚度小于60微米甚至30微米)非常不稳定，并且比传统的厚晶圆更容易受到应力的影响。在加工过程中，薄晶圆容易破裂和翘曲。因此，临时结合到刚性支撑载体基板上可以减少晶圆损坏的风险。然而，支撑载体的使用涉及附接载体基板，然后移除载体基板。这些额外的步骤允许以增加的时间和制造过程中涉及的费用为代价获得期望的刚性增加。因此，本文公开的方法允许不需要使用载体基板的晶圆级封装工艺。取而代之的是，将框架构件模制成具有一个或多个用于支撑各个管芯的腔。然后，在框架构件的支撑下，可以用期望的半导体封装操作来加工管芯，包括RDL形成和切成各个芯片。
在本发明的以下详细描述中，对附图进行了参照，这些附图构成本发明的一部分，并且在附图中通过说明的方式示出了可以实践本发明的特定实施例。对这些实施例进行了足够详细的描述，以使本领域技术人员能够实施本发明。在不脱离本发明的范围的情况下，可以利用其他实施例并且可以进行结构改变。
因此，以下详细描述不应被理解为限制性的，并且本发明的范围仅由所附权利要求以及这些权利要求所赋予的等同物的全部范围来限定。
现在将参照附图描述本发明的一个或多个实施方式，其中，贯穿全文，相似的附图标记用于指代相似的元件，并且其中所示的结构不是一定按比例绘制。
图2A至图2D示出了根据本公开的用于制造晶圆级封装的示例性方法的示意性横截面图。
更具体地，图2A示出了根据本公开的实施例的用于模制框架构件的模制设备(在图2B中最佳地示出了形成的框架构件208)。模制设备包括第一模制板202、第二模制板204和离型膜205，并且其同时且单独地模制框架结构和框架构件的凹口。尽管结合图示的实施例示出和描述了两个模制板，但是应当理解，替代实施例可以包括多于两个的板，这些板可以被构造成一起工作以形成根据本公开的框架构件208。
例如，第一模制板202可以由金属制成，多个突起207形成在第一模制板202中并且从第一模制板202的按压表面延伸。突起207在数量和位置上与框架构件所支撑的半导体管芯214(例如，在图2C中示出)相对应。突起207形成为由第一模制板202支撑的矩形按压构件。在包括多于两个模制板的替代实施例中，突起207可以全部设置在单个模制板上，或者突起207可以分布在多于一个模制板中。突起207被成形为允许在模制化合物206中形成相应的矩形或正方形凹口(如在平面图中观察到的，例如在图3中观察到的，例如由框架结构210限定的凹口212，如在图2B中以横截面图和在图3中以平面图示出的)。替代地，作为形成矩形或正方形凹口的替代或补充，可以为形成在模制化合物206中的凹口选择任何期望的形状。可以根据需要选择凸起207的尺寸，优选地至少部分地基于放置在其中的管芯的尺寸来选择。第二模制板204包括例如可以由金属形成的按压体。
可以在第一模制板202和第二模制板204之间、在第二模制板204的接触表面上提供可选的离型膜205，使得在将模制化合物206提供到模制设备之前，离型膜205位于模制化合物206与第一模制板202和第二模制板204中的至少一个之间。在一些实施例中，第一模制板202和/或第二模制板204可以被构造成加热模制化合物206，以便固化或硬化模制化合物206，作为形成框架构件208的过程的一部分。在这样的实施例中，离型膜205可以在固化过程中保持在第一和第二模制板202、204之间的适当位置。离型膜205可以具有弹性和耐热性，并且可能期望其具有在比加热模制设备的温度更低的温度下软化的特性。例如，在一些实施例中，可以将第一和/或第二模制板202、204加热到约150℃，因此优选将离型膜205的软化温度选择为等于或高于150℃。例如，离型膜205可以包括热塑性氟树脂(例如，ETFE)塑料膜。
在一些实施例中，模制化合物206可以是几种已知的用于半导体的环氧模制化合物中的任何一种，优选地是适合于压缩模制的已知类型。可以通过将模制化合物206放入由第一和第二模制板202、204限定的模腔中来完成模制化合物206的压缩模制。在一些实施例中，在将模制化合物206放置在图2A所示的模制设备中之前，模制化合物206和/或第一和/或第二模制板202、204可以被预热。通过使第一和第二模制板202、204更靠近在一起(例如借助于如图2A中的箭头所示的顶力)，使得由第一和第二模制板202、204限定的模腔闭合。第一模制板202和第二模制板204在压缩操作期间施加压力以迫使模制化合物206成形为基于第一模制板202和第二模制板204的与模制化合物206相邻的表面的形状的形状。
使用图2A所示的模制设备的模制过程能够在部分固化的阶段中使用颗粒、油灰状团块或预成型体的形式的热固性树脂。在固化之前，环氧树脂包括树脂和固化剂。当发生聚合时，该材料变成有时称为“玻璃态”的有组织的晶体型结构。在这种状态下，分子可以振动，但否则会锁定位置。随着温度升高，分子可以更自由地移动，材料逐渐开始软化。随着温度继续升高，聚合物最终会经历显著的状态变化，变成更柔韧的橡胶状状态。尽管该状态转变是在一定温度范围内逐渐发生的，但玻璃转变温度范围(Tg)通常由特定温度指定。实际的玻璃转变温度范围取决于几个因素，包括材料的分子结构、样品制备，固化时间表和固化程度。然而，作为示例，可以用作具有在120℃至170℃范围内的指定玻璃转变温度(Tg)的模制化合物206的环氧模制化合物是已知的。在这样的实施例中，第一和/或第二模制板202、204可以至少被加热到模制化合物206的指定Tg，以便至少部分地固化模制化合物206。第一和/或第二模制板202、204因此可以向模制化合物206施加热量和压力，并且优选地保持热量和压力直到模制化合物206已经固化。然而，在一些实施例中，此时可以仅执行用于固化模制化合物206的一部分固化过程，并且该固化过程可以在稍后的时间完成，例如在下面结合图2D描述的材料去除操作之后。
图2B是可以使用图2A所示的模制设备形成的框架构件208的实施例的横截面图。另外，图3示出了可以使用图2A所示的模制设备形成的框架构件208的实施例的平面图。因此，框架构件208可以由诸如环氧模制化合物之类的固化的模制化合物206形成。框架构件208包括限定框架构件208中的多个凹口212的多个框架结构210。框架构件208用于至少部分地消除在现有技术过程中使用的载体基板(例如图1A至1D所示的载体基板104)的使用。
接下来转向图2C，多个半导体管芯214设置在框架构件208的凹口212中。例如，半导体管芯214可以使得每个管芯214具有各自的有源表面和至少一个相应的集成电路区域。在一些实施例中，管芯214在框架构件208的相应凹口212内粘附至框架构件208。优选地，如图2C所示，多个管芯214中的每一个被放置在相应的凹口212中，并且至少部分地被框架结构210包围。
在一些实施例中，可以使用拾取和放置(PnP)程序将管芯214放置在凹口212中。优选地，由已知的PnP器件(未示出)执行PnP过程。例如，典型的PnP器件包括用于对被放置在其中一个凹口212中的管芯214进行抓取的接合头。然后，接合头将管芯214平移到凹口212并将管芯214附接到其中。此过程称为拾放运动。为了保持整体质量和制造过程中的良率，需要仔细的管芯操控。由于管芯214的纤细特性(特别是在管芯214的有源侧)，使用PnP机器可将拾取、移动和放置管芯214的接触和相对力降至最低。但是，在一些实施例中，可以使用一定程度的手动去除与使用PnP机器的自动过程相结合，或代替自动过程。然而，通常通过使用PnP自动化来减少对管芯214的机械损坏的可能性。此外，使用PnP器件可以缩短制造时间，因为已知的PnP器件可实现快速的输出轮换，而这是其他方式很难实现的。而且，使用自动PnP器件可以减少放置错误，例如与管芯定向有关的错误。在一些实施例中，由人执行的任务可以包括在PnP器件操作中。例如，一些PnP器件允许操作人员通过在放大的屏幕上观看而手动地调整X和Y坐标，从而在要拾取的管芯214上定心。可以根据多种已知的PnP器件和操作方法以多种方式由PnP器件拾取管芯214。例如，在一些PnP器件中，可以使用真空驱动的机械臂由PnP器件拾取管芯214，该真空机械臂扫入位置，拾取管芯214，然后将该管芯放入期望的其中一个凹口212中。为了实现管芯214与框架构件208之间的牢固结合，将管芯214附接到凹口212中的适当的结合时间和力是优选的。
可以使用粘合剂将管芯214附接在凹口212中并保持位置，其中粘合剂形成粘合剂层215。粘合剂层215可以是胶带，或者可以是通过旋涂工艺等施加到凹口212的胶水或环氧树脂。在一些实施例中，粘合剂层215可以包括例如可商购的粘片膜(DAF)。在一些实施例中，粘合剂层215可以包括例如可商购的用于管芯附接的环氧糊状粘合剂。
接下来转向图2D，在管芯214和框架构件208上形成再分布层(RDL)216。RDL 216的形成包括用介电材料涂覆或层压管芯214和框架构件208以使上表面平坦化。现在还参照图4，示出了图2D的指示部分的放大图，介电材料还通过填充管芯214与其相邻的框架结构210之间的间隙来形成介电结构218。在一些实施例中，介电材料可能不能够填充管芯214与其相邻的框架结构210之间的间隙，这取决于介电材料的处理方式或介电材料的尺寸。
RDL 216的其余部分可以根据已知方法形成，通常涉及形成金属和介电材料层。RDL 216的金属结构电连接到管芯214上的接触点。此外，为了提供RDL216和其他电路之间的电连接，形成多个凸块222，例如微凸块或铜柱。可选地，可以执行热处理以使凸块222回流。
一旦完成上述过程，就可以使用材料去除工艺从框架构件208去除过量的材料。当形成框架构件208时，选择厚度以提供足够的机械强度来减轻晶圆翘曲，从而允许从管芯214有效地制造半导体器件。然而，一旦制造工艺足够接近完成要减少的翘曲问题，则管芯214背面上的框架构件208的过量厚度可以被减小。材料去除工艺可以包括例如研磨以从管芯214的背面去除过量的框架部分220。
如将意识到的，进一步的处理可以包括沿着切口区域的切割或锯切过程，以将各个管芯214和它们各自的晶圆级封装彼此分离。应当理解，附图中描绘的截面结构仅用于说明目的。
图5是示出根据本公开的用于制造晶圆级封装的示例性方法的工艺流程图。在该实施例中，一种制造半导体器件的方法开始于步骤510：提供被构造成形成具有多个凹口的模制结构的第一模制板和第二模制板。在一些实施例中，附加的模制板可与第一模制板和第二模制板一起使用以形成具有多个凹口的模制结构。在一些实施例中，下一步骤520包括在第一模制板和第二模制板之间分配模制化合物。在一些这样的实施例中，可以在第一模制板和第二模制板之间提供离型膜。在一些实施例中，下一步骤530可以包括将模制板放在一起，以使模制化合物在由模制板限定的模腔中成型。在一些这样的实施例中，可以在将模制板放在一起之前将离型膜放置在模制化合物与其中至少一个模制板之间。
在一些实施例中，下一步骤540可以包括使模制化合物固化，从而形成框架构件，该框架构件包括限定框架构件中的所述多个凹口的多个框架结构。在一些这样的实施例中，模制化合物可以包括环氧树脂。在一些这样的实施例中，模制化合物的固化可以包括例如使用热量和/或压力来固化环氧树脂。
在一些实施例中，下一步骤550可以包括在框架构件的相应凹口内将多个管芯粘附至框架构件，使得所述多个管芯中的每一个至少部分地由所述多个框架结构中的至少一个包围。在一些实施例中，每个管芯可以包括相应的有源表面和至少一个相应的集成电路区域。在一些实施例中，每个管芯也可以包括硅。在一些实施例中，下一步骤560可以包括在管芯上和框架构件的框架结构上形成再分布层(RDL)，从而形成多管芯面板。在一些这样的实施例中，RDL层可以包括电连接到相应管芯的导电结构。在一些这样的实施例中，RDL的形成可以包括在管芯与其相应的相邻框架结构之间在凹口中形成介电结构。在一些实施例中，步骤560可以包括一旦不再需要由过量的框架材料提供的机械支撑，就从管芯的背面去除框架构件的过量材料。在一些实施例中，下一步骤570可以包括沿着框架结构切割多层面板以获得单独的半导体器件。
本领域技术人员将容易地观察到，在保持本发明的教导的同时，可以对设备和方法进行多种修改和改变。因此，以上公开内容应被解释为仅由所附权利要求书的边界和界限来限定。

Claims (20)

1.一种制造半导体器件的方法，包括：
提供第一模制板和第二模制板，所述第一模制板和所述第二模制板被构造成形成具有多个凹口的模制结构；
在所述第一模制板和所述第二模制板之间分配模制化合物；
将所述第一模制板和所述第二模制板放在一起，以使所述模制化合物在所述第一模制板和所述第二模制板之间成型；
使所述模制化合物固化，从而形成包括多个框架结构的框架构件，所述框架结构限定所述框架构件中的所述多个凹口；
将多个管芯在所述框架构件的相应凹口内粘附到所述框架构件，使得所述多个管芯中的每一个至少部分地被所述多个框架结构中的至少一个包围，其中每个管芯具有相应的有源表面和至少一个相应的集成电路区域；
在所述管芯上和所述框架构件的框架结构上形成再分布层(RDL)，从而形成多管芯面板，其中所述RDL的形成包括在每个管芯与相应的相邻框架结构之间在所述多个凹口中形成介电结构；以及
沿着所述多个框架结构将多层面板切割以获得单独的半导体器件。
2.根据权利要求1所述的方法，其中，所述模制化合包含环氧树脂。
3.根据权利要求2所述的方法，其中，所述模制化合物的固化包括固化所述环氧树脂。
4.根据权利要求1所述的方法，还包括在所述第一模制板和所述第二模制板之间提供离型膜，使得在所述第一模制板和所述第二模制板放在一起之前，所述离型膜位于所述模制化合物与所述第一模制板和所述第二模制板中的至少一个之间。
5.根据权利要求1所述的方法，其中，所述框架构件的所述多个凹口被布置在所述框架构件的第一侧上，并且其中，所述方法进一步包括从所述框架构件的第二侧去除所述框架构件的材料，其中所述第二侧与所述框架构件的所述第一侧相反。
6.根据权利要求1所述的方法，其中，所述多个管芯的每一个包括硅。
7.根据权利要求1所述的方法，其中，所述RDL层包括电连接到相应管芯的导电结构。
8.一种制造半导体器件的方法，包括：
提供多个模制板，所述多个模制板被构造成形成具有第一凹口和第二凹口的模制结构；
使用所述多个模制板将模制化合物成形；
固化所述模制化合物，从而形成包括多个框架结构的框架构件，所述多个框架结构限定了所述框架构件中的所述第一凹口和所述第二凹口；
将第一管芯和第二管芯分别在所述框架构件的所述第一凹口和所述第二凹口内粘附到所述框架构件，使得所述第一管芯和所述第二管芯中的每一个至少部分地被所述多个框架结构中的至少一个包围，其中所述第一管芯和所述第二管芯中的每一个具有相应的有源表面和至少一个相应的集成电路区域；
在所述第一管芯和所述第二管芯上以及所述框架构件的框架结构上形成再分布层(RDL)，从而形成多管芯面板，其中所述RDL的形成包括在所述第一管芯和所述第二管芯中的每一个与相应的相邻框架结构之间在所述第一凹口和所述第二凹口中形成介电结构；以及
沿着所述多个框架结构将多层面板切割以获得单独的半导体器件。
9.根据权利要求8所述的方法，其中，所述模制化合包含环氧树脂。
10.根据权利要求9所述的方法，其中，所述模制化合物的固化包括固化所述环氧树脂。
11.根据权利要求8所述的方法，还包括在所述多个模制板中的至少一个附近提供离型膜，使得在所述模制化合物成型之前，所述离型膜位于所述模制化合物与所述多个模制板中的所述至少一个之间。
12.根据权利要求8所述的方法，其中，所述框架构件的所述第一凹口和所述第二凹口被布置在所述框架构件的第一侧上，并且其中，所述方法进一步包括从所述框架构件的第二侧去除所述框架构件的材料，其中所述第二侧与所述框架构件的所述第一侧相反。
13.根据权利要求8所述的方法，其中，所述第一管芯和所述第二管芯中的每一个都包括硅。
14.根据权利要求8所述的方法，其中，所述RDL层包括电连接到所述第一管芯和所述第二管芯中的至少一个的导电结构。
15.一种半导体器件，包括：
具有有源表面和至少一个集成电路区域的管芯；
邻近所述管芯的框架结构；
至少部分地置于所述管芯和所述框架结构之间的介电结构；以及
在所述管芯上、在所述框架结构上和在所述介电结构上的再分布层(RDL)，其中所述RDL电连接到所述管芯。
16.根据权利要求15所述的半导体器件，其中，所述框架结构包括模制化合物。
17.根据权利要求16所述的半导体器件，其中，所述模制化合物包括环氧树脂。
18.根据权利要求17所述的半导体器件，其中，所述管芯包括硅。
19.根据权利要求15所述的半导体器件，其中，所述RDL至少包括介电层和在所述介电层中的金属特征。
20.根据权利要求19所述的半导体器件，其中，所述金属特征中的至少一个电连接到所述管芯。
CN201880088794.8A 2018-02-09 2018-03-29 制造具有无载体模腔的扇出型封装的方法 Pending CN111712907A (zh)

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