JP4651924B2 - 薄膜半導体装置および薄膜半導体装置の製造方法 - Google Patents
薄膜半導体装置および薄膜半導体装置の製造方法 Download PDFInfo
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Description
2 絶縁基板
4 層間絶縁膜(絶縁層)
5 層間平坦化絶縁膜(絶縁層)
10 単結晶Si基板(転写用基板)
11 単結晶Si薄膜トランジスタ(転写デバイス)
12 ゲート電極
13 平坦化層(絶縁層)
14 ゲート絶縁膜(絶縁層)
15a 半導体層
21 多結晶Si薄膜トランジスタ(成膜デバイス)
23 ゲート絶縁膜(絶縁層)
33 中継パッド
34 接続配線(第1の接続配線)
35 接続配線(第2の接続配線)
Claims (3)
- ガラス基板上に、単結晶Siからなる活性層を備えた単結晶Si薄膜デバイスと非単結晶Siからなる活性層を備えた非単結晶Si薄膜デバイスとを備えている薄膜半導体装置において、
上記単結晶Si薄膜デバイスの少なくとも一部は、上記ガラス基板とは別の単結晶Si基板を用いて形成されたものがガラス基板上に転写されるものであり、上記非単結晶Si薄膜デバイスは上記ガラス基板上に直接形成されたものであると共に、
上記単結晶Si薄膜デバイスの形成領域には、該単結晶Si薄膜デバイスが有する第1の絶縁層と、上記単結晶Si薄膜デバイスの形成領域と上記非単結晶Si薄膜デバイスの形成領域との両方に存在する第2の絶縁層とが第1の絶縁層が下側になるように積層して形成され、
上記非単結晶Si薄膜デバイスの形成領域には、上記第2の絶縁層のみが形成されており、
上記第1の絶縁層中の所定箇所に、上記単結晶Si薄膜デバイスのゲート電極または活性層と同一層の中継パッドが形成されており、
上記中継パッドは、上記第1の絶縁層に形成された第1のコンタクトホールに設けられた接続配線と、少なくとも上記第2の絶縁層に形成された第2のコンタクトホールに設けられた接続配線とを中継しており、
上記第1のコンタクトホールに設けられた接続配線は、上記単結晶Si薄膜デバイスのゲート電極よりも下側に位置する第1の金属配線を介して上記単結晶Si薄膜デバイスに電気的に接続されていることを特徴とする薄膜半導体装置。 - ガラス基板上に、単結晶Siからなる活性層を備えた単結晶Si薄膜デバイスと非単結晶Siからなる活性層を備えた非単結晶Si薄膜デバイスとを備え、上記単結晶Si薄膜デバイスの少なくとも一部は、上記ガラス基板とは別の単結晶Si基板を用いて形成されたものがガラス基板上に転写されるものであり、上記非単結晶Si薄膜デバイスは上記ガラス基板上に直接形成された薄膜半導体装置の製造方法において、
上記単結晶Si基板に、上記単結晶Si薄膜デバイスを形成する第1の工程と、
上記単結晶Si基板に、所定の濃度とエネルギーで水素イオンもしくは水素イオンとHe等の希ガスイオンを打ち込んでイオン注入部を形成した後、上記単結晶Si基板の表面を平坦化および活性化し、該単結晶Si基板をガラス基板に接合し熱処理することにより前記イオン注入部から劈開分離し、上記単結晶Si薄膜デバイスをガラス基板上に転写する第2の工程と、
ガラス基板上に上記非単結晶Si薄膜デバイスを形成する第3の工程と、
上記単結晶Si薄膜デバイスと上記非単結晶Si薄膜デバイスを覆う第2の絶縁層を形成した後、該第2の絶縁層に第2のコンタクトホールを形成し、かつ、第2のコンタクトホール内に接続配線を形成する第4の工程とを有すると共に、
上記第1の工程は、
上記単結晶Si薄膜デバイスのゲート電極、または半導体層と同時に中継パッドを形成する第5の工程と、
上記単結晶Si薄膜デバイスと上記中継パッドを覆うように第1の絶縁層を形成した後、該第1の絶縁層に第1のコンタクトホールを形成し、かつ、第1のコンタクトホール内に接続配線を形成する第6の工程と、
上記第1のコンタクトホール内の接続配線を介して、上記中継パッドと上記単結晶Si薄膜デバイスとを電気的に接続されるように第1の金属配線を形成する第7の工程とを含み、
上記第4の工程は、少なくとも上記第2のコンタクトホール内の接続配線を介して、上記中継パッドと非単結晶Si薄膜デバイスとを電気的に接続する第2の金属配線を形成する第8の工程を含む、ことを特徴とする薄膜半導体装置の製造方法。 - ガラス基板上に、単結晶Siからなる活性層を備えた単結晶Si薄膜デバイスと非単結晶Siからなる活性層を備えた非単結晶Si薄膜デバイスとを備え、上記単結晶Si薄膜デバイスの少なくとも一部は、上記ガラス基板とは別の単結晶Si基板を用いて形成されたものがガラス基板上に転写されるものであり、上記非単結晶Si薄膜デバイスは上記ガラス基板上に直接形成された薄膜半導体装置の製造方法において、
上記単結晶Si基板に、上記単結晶Si薄膜デバイスを形成する第1の工程と、
上記単結晶Si基板に、所定の濃度とエネルギーで水素イオンもしくは水素イオンとHe等の希ガスイオンを打ち込んでイオン注入部を形成した後、上記単結晶Si基板の表面を平坦化および活性化する第2の工程と、
該単結晶Si基板を、上記非単結晶Si薄膜デバイスが形成されたガラス基板に接合し熱処理することにより前記イオン注入部から劈開分離し、上記単結晶Si薄膜デバイスをガラス基板上に転写する第3の工程と、
上記単結晶Si薄膜デバイスと上記非単結晶Si薄膜デバイスを覆う第2の絶縁層を形成した後、該第2の絶縁層に第2のコンタクトホールを形成し、かつ、第2のコンタクトホール内に接続配線を形成する第4の工程とを有すると共に、
上記第1の工程は、
上記単結晶Si薄膜デバイスのゲート電極、または半導体層と同時に中継パッドを形成する第5の工程と、
上記単結晶Si薄膜デバイスと上記中継パッドを覆うように第1の絶縁層を形成した後、該第1の絶縁層に第1のコンタクトホールを形成し、かつ、第1のコンタクトホール内に接続配線を形成する第6の工程と、
上記第1のコンタクトホール内の接続配線を介して、上記中継パッドと上記単結晶Si薄膜デバイスとを電気的に接続するように第1の金属配線を形成する第7の工程とを含み、
上記第4の工程は、少なくとも上記第2のコンタクトホール内の接続配線を介して、上記中継パッドと非単結晶Si薄膜デバイスとを電気的に接続する第2の金属配線を形成する第8の工程を含む、ことを特徴とする薄膜半導体装置の製造方法。
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KR20050028871A (ko) | 2005-03-23 |
EP1517363A2 (en) | 2005-03-23 |
US7488980B2 (en) | 2009-02-10 |
EP1517363A3 (en) | 2006-06-07 |
KR100737337B1 (ko) | 2007-07-10 |
US20050067619A1 (en) | 2005-03-31 |
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