JP4396608B2 - 誘電体磁器組成物および電子部品 - Google Patents
誘電体磁器組成物および電子部品 Download PDFInfo
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- JP4396608B2 JP4396608B2 JP2005288493A JP2005288493A JP4396608B2 JP 4396608 B2 JP4396608 B2 JP 4396608B2 JP 2005288493 A JP2005288493 A JP 2005288493A JP 2005288493 A JP2005288493 A JP 2005288493A JP 4396608 B2 JP4396608 B2 JP 4396608B2
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Description
チタン酸バリウムを含む主成分と、
マグネシウム酸化物を含む第1副成分と、
イットリウム酸化物を含む第2副成分と、
バナジウム酸化物を含む第3副成分と、
酸化ケイ素を主成分とするガラス成分と、を含有する誘電体磁器組成物であって、
主成分であるチタン酸バリウム100モルに対する各副成分の比率が、
第1副成分:0.1〜3モル、
第2副成分:0.01〜0.5モル(ただし、0.5は含まず)、
第3副成分:0.01〜0.2モル、
ガラス成分:0.5〜10モルであり、
マンガン酸化物およびクロム酸化物を実質的に含有せず、
前記誘電体磁器組成物を構成する誘電体粒子の平均粒子径が、0.35μm以下である。
図1は、本発明の一実施形態に係る積層セラミックコンデンサの断面概略図であり、
図2は、本発明の実施例および比較例の比誘電率と誘電体粒子の平均粒子径との関係を示すグラフ、
図3は、本発明の実施例の比誘電率とBa/Tiとの関係を示すグラフ、
図4は、本発明の実施例の高温負荷寿命とBa/Tiとの関係を示すグラフ、
図5は、本発明の実施例の85°Cにおける容量温度変化率とBa/Tiとの関係を示すグラフ、
図6は、本発明の実施例の−25°Cにおける容量温度変化率とBa/Tiとの関係を示すグラフである。
チタン酸バリウムを含む主成分と、
マグネシウム酸化物を含む第1副成分と、
イットリウム酸化物を含む第2副成分と、
バナジウム酸化物を含む第3副成分と、
酸化ケイ素を主成分とするガラス成分と、を含有する誘電体磁器組成物であって、
マンガン酸化物およびクロム酸化物を実質的に含有せず、
前記誘電体磁器組成物を構成する誘電体粒子の平均粒子径が、0.35μm以下であり、好ましくは、0.27μm以下である。誘電体粒子の平均粒子径が、大きくなると、比誘電率が悪化する傾向にある。
実施例1
昇温速度:30°C/時間、
保持温度:275°C、
保持時間:8時間、
雰囲気:空気中、
で行った。
昇温速度:200°C/時間、
保持温度:1180〜1210°C、
保持時間:2時間、
酸素分圧:5×10−12Pa、
雰囲気:H2−N2−H2Oガス、
で行った。
昇温速度:200°C/時間、
保持温度:900〜1100°C、
保持時間:2時間、
酸素分圧:1×10−6Pa、
雰囲気:加湿したN2ガス、
で行った。
実施例2
実施例3
実施例4
4… コンデンサ素体
4a… 第1端部
4b… 第2端部
6,8… 端子電極
10… 誘電体層
12… 内部電極層
Claims (10)
- チタン酸バリウムを含む主成分と、
マグネシウム酸化物を含む第1副成分と、
イットリウム酸化物を含む第2副成分と、
バナジウム酸化物を含む第3副成分と、
酸化ケイ素を主成分とするガラス成分と、を含有する誘電体磁器組成物であって、
主成分であるチタン酸バリウム100モルに対する各副成分の比率が、
第1副成分:0.1〜3モル、
第2副成分:0.01〜0.5モル(ただし、0.5は含まず)、
第3副成分:0.01〜0.2モル、
ガラス成分:0.5〜10モルであり、
マンガン酸化物およびクロム酸化物を実質的に含有せず、
前記誘電体磁器組成物を構成する誘電体粒子の平均粒子径が、0.35μm以下であり、
前記チタン酸バリウム中のBaとTiとのモル比を示すBa/Tiが、1.011〜1.030であることを特徴とする誘電体磁器組成物。 - 前記ガラス成分が、化学式MxSiO3 で表すことができ、前記式中のMが、Ba、Ca、Sr、Li、Bの少なくともいずれか1つを含み、xが2/3〜2の範囲にある請求項1に記載の誘電体磁器組成物。
- 前記誘電体磁器組成物の(111)面のピークの半価幅が、0.143度以下である請求項1または2に記載の誘電体磁器組成物。
- 前記誘電体磁器組成物中のマンガン酸化物の含有量が、前記主成分であるチタン酸バリウム100モルに対して、0.01モル以下であることを特徴とする請求項1〜3のいずれかに記載の誘電体磁器組成物。
- 前記誘電体磁器組成物中のクロム酸化物の含有量が、前記主成分であるチタン酸バリウム100モルに対して、0.01モル以下であることを特徴とする請求項1〜4のいずれかに記載の誘電体磁器組成物。
- 請求項1〜5のいずれかに記載の誘電体磁器組成物で構成してある誘電体層を有する電子部品。
- 請求項1〜5のいずれかに記載の誘電体磁器組成物で構成してある誘電体層と、内部電極層とが、交互に積層してあるコンデンサ素子本体を有する積層セラミックコンデンサ。
- 温度20°C、印加電圧0Vにおける静電容量を基準とした場合、温度85°C、電界強度1V/μmの直流電圧の印加状態における容量温度変化率(ΔC/C20)が、±10%以内である請求項7に記載の積層セラミックコンデンサ。
- 前記誘電体層の厚みが、3μm以下であることを特徴とする請求項7または8に記載の積層セラミックコンデンサ。
- 試験温度200°C、30V/μmの直流電圧の印加状態に保持することにより測定された高温負荷寿命測定において、前記直流電圧の印加開始から、前記直流電圧の印加状態において、検出される電流の電流値が2mA以上となるまでの時間が、25時間以上である請求項7〜9のいずれかに記載の積層セラミックコンデンサ。
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JP2005288493A JP4396608B2 (ja) | 2005-09-30 | 2005-09-30 | 誘電体磁器組成物および電子部品 |
KR1020060094411A KR101272286B1 (ko) | 2005-09-30 | 2006-09-27 | 유전체 자기 조성물 및 전자 부품 |
US11/527,703 US7220691B2 (en) | 2005-09-30 | 2006-09-27 | Dielectric ceramic composition and electronic device |
CNA2006101444429A CN1978380A (zh) | 2005-09-30 | 2006-09-29 | 电介质陶瓷组合物和电子元件 |
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JP (1) | JP4396608B2 (ja) |
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JP5164687B2 (ja) * | 2008-06-26 | 2013-03-21 | 京セラ株式会社 | 誘電体磁器およびそれを用いた積層セラミックコンデンサ |
JP2010006634A (ja) * | 2008-06-26 | 2010-01-14 | Kyocera Corp | 誘電体磁器およびそれを用いた積層セラミックコンデンサ |
JP2010040798A (ja) * | 2008-08-06 | 2010-02-18 | Murata Mfg Co Ltd | 積層セラミックコンデンサ |
JP4894908B2 (ja) * | 2009-11-17 | 2012-03-14 | Tdk株式会社 | 誘電体磁器組成物 |
JP5224074B2 (ja) * | 2010-08-04 | 2013-07-03 | 株式会社村田製作所 | 誘電体セラミック、及び積層セラミックコンデンサ |
JP6753221B2 (ja) * | 2016-08-30 | 2020-09-09 | Tdk株式会社 | 誘電体組成物および積層電子部品 |
JP6795422B2 (ja) | 2017-02-16 | 2020-12-02 | 太陽誘電株式会社 | 積層セラミックコンデンサおよびその製造方法 |
TWI766181B (zh) * | 2019-08-16 | 2022-06-01 | 興勤電子工業股份有限公司 | 陶瓷組成物用於熱敏電阻之用途、陶瓷燒結體用於熱敏電阻之用途、熱敏電阻及其製法 |
CN112408975B (zh) * | 2019-08-23 | 2022-11-04 | 兴勤电子工业股份有限公司 | 陶瓷组成物、陶瓷烧结体、叠层型陶瓷电子元件及其制法 |
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