JP2011241129A - 誘電体磁器組成物およびセラミック電子部品 - Google Patents
誘電体磁器組成物およびセラミック電子部品 Download PDFInfo
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- JP2011241129A JP2011241129A JP2010116658A JP2010116658A JP2011241129A JP 2011241129 A JP2011241129 A JP 2011241129A JP 2010116658 A JP2010116658 A JP 2010116658A JP 2010116658 A JP2010116658 A JP 2010116658A JP 2011241129 A JP2011241129 A JP 2011241129A
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- Inorganic Insulating Materials (AREA)
Abstract
【解決手段】BaTiO3を含有し、BaTiO3100モルに対して、RA酸化物(RAは、Dy、GdおよびTbから選ばれる1つ以上)をRA2O3換算で0.9〜2.0モル、RB酸化物(RBはHoおよび/またはY)をRB2O3換算で0.3〜2.0モル、Yb酸化物をYb2O3換算で0.75〜2.5モル、Mg酸化物をMg換算で0.5〜2.0モル、BaTiO3100モルに対するRA酸化物の含有量(α)、RB酸化物の含有量(β)およびYb酸化物の含有量(γ)が、0.66≦α/β≦3.0、0.8≦(α+β)/γ≦2.4である関係を満足する誘電体磁器組成物。
【選択図】なし
Description
チタン酸バリウムを、主成分として含有し、
前記チタン酸バリウム100モルに対して、副成分として
RAの酸化物(RAは、Dy、GdおよびTbからなる群から選ばれる少なくとも1つである)を、RA2O3換算で、0.9〜2.0モル、
RBの酸化物(RBは、HoおよびYからなる群から選ばれる少なくとも1つである)を、RB2O3換算で、0.3〜2.0モル、
Ybの酸化物を、Yb2O3換算で、0.75〜2.5モル、
Mgの酸化物を、Mg換算で、0.5〜2.0モル、
前記チタン酸バリウム100モルに対する前記RAの酸化物の含有量、前記RBの酸化物の含有量および前記Ybの酸化物の含有量を、それぞれ、α、βおよびγとすると、0.66≦α/β≦3.0、0.8≦(α+β)/γ≦2.4である関係を満足することを特徴とする。
図1に示すように、セラミック電子部品の一例としての積層セラミックコンデンサ1は、誘電体層2と、内部電極層3と、が交互に積層された構成のコンデンサ素子本体10を有する。内部電極層3は、各端面がコンデンサ素子本体10の対向する2端部の表面に交互に露出するように積層してある。一対の外部電極4は、コンデンサ素子本体10の両端部に形成され、交互に配置された内部電極層3の露出端面に接続されて、コンデンサ回路を構成する。
誘電体層2は、本実施形態に係る誘電体磁器組成物から構成されている。該誘電体磁器組成物は、主成分として、チタン酸バリウムを有している。また、該誘電体磁器組成物は、主成分がBaTiO3である誘電体粒子を有している。
内部電極層3に含有される導電材は特に限定されないが、誘電体層2を構成する材料が耐還元性を有するため、比較的安価な卑金属を用いることができる。導電材として用いる卑金属としては、NiまたはNi合金が好ましい。Ni合金としては、Mn,Cr,CoおよびAlから選択される1種以上の元素とNiとの合金が好ましく、合金中のNi含有量は95重量%以上であることが好ましい。なお、NiまたはNi合金中には、P等の各種微量成分が0.1重量%程度以下含まれていてもよい。内部電極層3の厚さは用途等に応じて適宜決定すればよいが、通常、0.1〜3μm、特に0.2〜2.0μm程度であることが好ましい。
外部電極4に含有される導電材は特に限定されないが、本発明では安価なNi,Cuや、これらの合金を用いることができる。外部電極4の厚さは用途等に応じて適宜決定すればよいが、通常、10〜50μm程度であることが好ましい。
本実施形態の積層セラミックコンデンサ1は、従来の積層セラミックコンデンサと同様に、ペーストを用いた通常の印刷法やシート法によりグリーンチップを作製し、これを焼成した後、外部電極を印刷または転写して焼成することにより製造される。以下、製造方法について具体的に説明する。
まず、主成分の原料としてのBaTiO3 粉末、RAの酸化物の原料としてのTb2O3.5粉末、RBの酸化物の原料としてのY2O3粉末およびYb2O3粉末を、それぞれ準備した。また、Mgの酸化物の原料としてMgCO3粉末、Mnの酸化物の原料としてMnO粉末、Vの酸化物の原料としてV2O5粉末、(Ba,Ca)xSiO2+xとして(Ba0.57Ca0.43)SiO3粉末を、それぞれ準備した。
比誘電率εは、コンデンサ試料に対し、基準温度25℃において、デジタルLCRメータ(YHP社製4274A)にて、周波数1kHz,入力信号レベル(測定電圧)1.0Vrmsの条件下で測定された静電容量から算出した(単位なし)。比誘電率は高いほうが好ましく、本実施例では1300以上を良好とした。結果を表1〜3に示す。
コンデンサ試料に対し、絶縁抵抗計(アドバンテスト社製R8340A)を用いて、20℃において10V/μmの直流電圧を、コンデンサ試料に1分間印加した後の絶縁抵抗IRを測定した。CR積は、上記にて測定した静電容量C(単位はμF)と、絶縁抵抗IR(単位はMΩ)との積を求めることにより測定した。本実施例では500以上を良好と判断し、表1〜3において「○」と表記し、それ以外のものを「×」と表記した。結果を表1〜3に示す。
コンデンサ試料に対し、−55〜155℃における静電容量を測定し、静電容量の変化率ΔCを算出し、EIA規格のX8R特性を満足するか否かについて評価した。すなわち、上記温度域における変化率ΔCが、±15%以内であるか否かを評価した。結果を表1〜3に示す。
コンデンサ試料に対し、200℃にて、40V/μmの電界下で直流電圧の印加状態に保持し、寿命時間を測定することにより、高温負荷寿命を評価した。本実施例においては、印加開始から絶縁抵抗が一桁落ちるまでの時間を破壊時間とし、これをワイブル解析することにより算出した平均故障時間(MTTF)を寿命と定義した。また、本実施例では、上記の評価を20個のコンデンサ試料について行い、その平均値を高温負荷寿命とした。本実施例では1.5時間以上を良好とした。結果を表1〜3に示す。
各成分の含有量を表4に示す量とし、複合酸化物の組成を表4に示す組成とした以外は、実施例1と同様にして、積層セラミックコンデンサの試料を作製し、実施例1と同様の特性評価を行った。結果を表4に示す。なお、容量温度特性については、表4の全ての試料がX8R特性を満足することが確認された。
Mgの酸化物、Vの酸化物およびMnの酸化物の含有量を表5に示す量とした以外は、実施例1と同様にして、積層セラミックコンデンサの試料を作製し、実施例1と同様の特性評価を行った。結果を表5に示す。なお、容量温度特性については、表5の全ての試料がX8R特性を満足することが確認された。
誘電体層の層間厚みを10μmとした以外は、試料番号3、12および13と同様にして、積層セラミックコンデンサの試料を作製し、実施例1と同様の特性評価を行った。結果を表6に示す。
2… 誘電体層
3… 内部電極層
4… 外部電極
10… コンデンサ素子本体
Claims (7)
- チタン酸バリウムを、主成分として含有し、
前記チタン酸バリウム100モルに対して、副成分として
RAの酸化物(RAは、Dy、GdおよびTbからなる群から選ばれる少なくとも1つである)を、RA2O3換算で、0.9〜2.0モル、
RBの酸化物(RBは、HoおよびYからなる群から選ばれる少なくとも1つである)を、RB2O3換算で、0.3〜2.0モル、
Ybの酸化物を、Yb2O3換算で、0.75〜2.5モル、
Mgの酸化物を、Mg換算で、0.5〜2.0モル、
前記チタン酸バリウム100モルに対する前記RAの酸化物の含有量、前記RBの酸化物の含有量および前記Ybの酸化物の含有量を、それぞれ、α、βおよびγとすると、0.66≦α/β≦3.0、0.8≦(α+β)/γ≦2.4である関係を満足することを特徴とする誘電体磁器組成物。 - 副成分として、チタン酸バリウム100モルに対し、さらにVの酸化物をV換算で0.03〜0.10モル含有する請求項1に記載の誘電体磁器組成物。
- 副成分として、チタン酸バリウム100モルに対し、さらにMnの酸化物をMn換算で0.10〜0.30モル含有する請求項1または2に記載の誘電体磁器組成物。
- 副成分として、チタン酸バリウム100モルに対し、さらに組成式(Ba,Ca)x SiO2+x で表される複合酸化物を、SiO2換算で、0.60(α+β+γ)〜1.0(α+β+γ)モル含有し、
前記組成式中のxが0.5〜1.0である請求項1〜3に記載の誘電体磁器組成物。 - 前記RAがTbである請求項1〜4のいずれかに記載の誘電体磁器組成物。
- 前記RBがYである請求項1〜5のいずれかに記載の誘電体磁器組成物。
- 請求項1〜6のいずれかに記載の誘電体磁器組成物から構成される誘電体層と、電極と、を有し、
前記誘電体層の厚みが5μm以下であるセラミック電子部品。
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