JP4341622B2 - 弾性表面波装置 - Google Patents
弾性表面波装置 Download PDFInfo
- Publication number
- JP4341622B2 JP4341622B2 JP2005510982A JP2005510982A JP4341622B2 JP 4341622 B2 JP4341622 B2 JP 4341622B2 JP 2005510982 A JP2005510982 A JP 2005510982A JP 2005510982 A JP2005510982 A JP 2005510982A JP 4341622 B2 JP4341622 B2 JP 4341622B2
- Authority
- JP
- Japan
- Prior art keywords
- acoustic wave
- surface acoustic
- protective film
- wave device
- piezoelectric substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000010897 surface acoustic wave method Methods 0.000 title claims description 120
- 239000000758 substrate Substances 0.000 claims description 98
- 230000001681 protective effect Effects 0.000 claims description 81
- 238000000034 method Methods 0.000 claims description 18
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 15
- 229920005989 resin Polymers 0.000 claims description 9
- 239000011347 resin Substances 0.000 claims description 9
- 238000007789 sealing Methods 0.000 claims description 7
- 229910013641 LiNbO 3 Inorganic materials 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 17
- 239000000463 material Substances 0.000 description 17
- 229910052751 metal Inorganic materials 0.000 description 17
- 239000002184 metal Substances 0.000 description 17
- 239000001301 oxygen Substances 0.000 description 17
- 229910052760 oxygen Inorganic materials 0.000 description 17
- 239000012298 atmosphere Substances 0.000 description 16
- 230000005616 pyroelectricity Effects 0.000 description 15
- 238000007254 oxidation reaction Methods 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000000843 powder Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- 230000007797 corrosion Effects 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000010405 reoxidation reaction Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 230000006378 damage Effects 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910000765 intermetallic Inorganic materials 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000005536 corrosion prevention Methods 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000010187 selection method Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910001868 water Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
- H03H9/1071—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the SAW device
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02984—Protection measures against damaging
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/058—Holders; Supports for surface acoustic wave devices
- H03H9/0585—Holders; Supports for surface acoustic wave devices consisting of an adhesive layer
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/058—Holders; Supports for surface acoustic wave devices
- H03H9/059—Holders; Supports for surface acoustic wave devices consisting of mounting pads or bumps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
- H03H9/1085—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a non-uniform sealing mass covering the non-active sides of the BAW device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1517—Multilayer substrate
- H01L2924/15172—Fan-out arrangement of the internal vias
- H01L2924/15174—Fan-out arrangement of the internal vias in different layers of the multilayer substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Description
Claims (5)
- 抵抗率が1.0×107〜1.0×1013Ω・cmの圧電基板と、
前記圧電基板の一方主面に形成されたインターデジタル電極と、
前記インターデジタル電極の下地に設けられた保護膜とを備えた弾性表面波素子と、
前記弾性表面波素子がフェイスダウン工法でボンディングされる実装基板と、
前記弾性表面波素子の周囲を覆っている封止樹脂とを備えたことを特徴とする、弾性表面波装置。 - 前記インターデジタル電極を覆うように設けられた第2の保護膜をさらに備える、請求項1に記載の弾性表面波装置。
- 前記保護膜が、SiN、ZnO及びSiO2からなる群から選択された1種により構成されている、請求項1または2に記載の弾性表面波装置。
- 前記保護膜が、SiN膜またはZnO膜と、該SiN膜またはZnO膜上に形成されたSiO2膜とを有する、請求項1または2に記載の弾性表面波装置。
- 前記圧電基板が、LiTaO3またはLiNbO3からなる、請求項1〜4のいずれかに記載の弾性表面波装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003183094 | 2003-06-26 | ||
JP2003183094 | 2003-06-26 | ||
PCT/JP2004/005552 WO2005002049A1 (ja) | 2003-06-26 | 2004-04-19 | 弾性表面波素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2005002049A1 JPWO2005002049A1 (ja) | 2006-08-10 |
JP4341622B2 true JP4341622B2 (ja) | 2009-10-07 |
Family
ID=33549571
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005510982A Expired - Lifetime JP4341622B2 (ja) | 2003-06-26 | 2004-04-19 | 弾性表面波装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7282835B2 (ja) |
JP (1) | JP4341622B2 (ja) |
WO (1) | WO2005002049A1 (ja) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPWO2005091500A1 (ja) * | 2004-03-18 | 2007-08-09 | 株式会社村田製作所 | 弾性表面波装置 |
US7525240B2 (en) | 2004-04-26 | 2009-04-28 | Tdk Corporation | Electronic component |
JP2006217225A (ja) * | 2005-02-03 | 2006-08-17 | Matsushita Electric Ind Co Ltd | 弾性表面波デバイスの製造方法 |
JP4775372B2 (ja) * | 2005-02-15 | 2011-09-21 | 株式会社村田製作所 | 積層型圧電素子 |
JP4765423B2 (ja) * | 2005-06-14 | 2011-09-07 | エプソントヨコム株式会社 | 弾性表面波デバイスの製造方法 |
WO2006134928A1 (ja) * | 2005-06-16 | 2006-12-21 | Murata Manufacturing Co., Ltd. | 圧電デバイス及びその製造方法 |
CN101253684B (zh) * | 2005-08-31 | 2012-02-29 | 京瓷株式会社 | 压电共振子 |
US7888850B2 (en) * | 2007-01-30 | 2011-02-15 | Nihon Dempa Kogyo Co., Ltd. | Tuning-fork type piezoelectric unit |
JP5158092B2 (ja) * | 2007-11-28 | 2013-03-06 | 株式会社村田製作所 | 弾性波装置 |
US20090216551A1 (en) * | 2008-02-26 | 2009-08-27 | Project Omega, Inc. | Method and system for managing social networks of a user |
JP4836092B2 (ja) | 2008-03-19 | 2011-12-14 | 国立大学法人東北大学 | 半導体装置の形成方法 |
JP5262553B2 (ja) * | 2008-10-14 | 2013-08-14 | 株式会社村田製作所 | 弾性波装置 |
US8508100B2 (en) * | 2008-11-04 | 2013-08-13 | Samsung Electronics Co., Ltd. | Surface acoustic wave element, surface acoustic wave device and methods for manufacturing the same |
WO2010058544A1 (ja) * | 2008-11-18 | 2010-05-27 | 株式会社村田製作所 | チューナブルフィルタ |
JP2013145932A (ja) * | 2010-05-07 | 2013-07-25 | Murata Mfg Co Ltd | 弾性表面波装置及びその製造方法 |
JP6432512B2 (ja) | 2013-08-14 | 2018-12-05 | 株式会社村田製作所 | 弾性表面波装置、電子部品、および弾性表面波装置の製造方法 |
WO2015098694A1 (ja) * | 2013-12-26 | 2015-07-02 | 株式会社村田製作所 | 弾性波装置及びその製造方法 |
US9973169B2 (en) * | 2015-10-01 | 2018-05-15 | Qorvo Us, Inc. | Surface acoustic wave filter with a cap layer for improved reliability |
CN111781271B (zh) * | 2020-07-14 | 2022-03-08 | 电子科技大学 | 一种柔性声表面波气体传感器及其制备方法 |
Family Cites Families (26)
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US4381469A (en) * | 1979-07-20 | 1983-04-26 | Murata Manufacturing Company, Ltd. | Temperature stable piezoelectric device |
JPH06132758A (ja) | 1992-10-14 | 1994-05-13 | Murata Mfg Co Ltd | 弾性表面波装置の製造方法 |
JPH06152299A (ja) | 1992-11-09 | 1994-05-31 | Fujitsu Ltd | 弾性表面波デバイス |
JP3411124B2 (ja) * | 1994-05-13 | 2003-05-26 | 松下電器産業株式会社 | 弾性表面波モジュール素子の製造方法 |
JP2003264448A (ja) | 1994-05-13 | 2003-09-19 | Matsushita Electric Ind Co Ltd | 弾性表面波モジュール素子 |
JP2915292B2 (ja) | 1994-07-12 | 1999-07-05 | 日本メクトロン株式会社 | ニオブ酸リチウム基板の製造方法 |
WO1996004713A1 (fr) * | 1994-08-05 | 1996-02-15 | Japan Energy Corporation | Dispositif a ondes acoustiques de surface et procede de production |
JPH0897671A (ja) | 1994-09-27 | 1996-04-12 | Oki Electric Ind Co Ltd | 弾性表面波装置 |
JPH09199974A (ja) * | 1996-01-19 | 1997-07-31 | Nec Corp | 弾性表面波装置 |
JPH10107573A (ja) | 1996-09-30 | 1998-04-24 | Kyocera Corp | 弾性表面波装置 |
JPH10209801A (ja) | 1997-01-28 | 1998-08-07 | Murata Mfg Co Ltd | 表面波装置 |
FR2764440B1 (fr) | 1997-06-10 | 2001-11-09 | Thomson Csf | Composant a ondes acoustiques de surface avec suppression de perturbation pyroelectrique |
DE69819971T2 (de) | 1997-07-25 | 2004-09-02 | Crystal Technology, Inc., Palo Alto | Vorbehandelte Kristalle aus Lithiumniobat und Lithiumtantalat und das Verfahren zu ihrer Herstellung |
JPH11274883A (ja) | 1998-03-20 | 1999-10-08 | Sumitomo Electric Ind Ltd | 圧電体複合基板および表面弾性波素子 |
JP2000058593A (ja) | 1998-08-03 | 2000-02-25 | Nec Corp | 表面弾性波素子の実装構造及びその実装方法 |
JP2000183680A (ja) * | 1998-12-11 | 2000-06-30 | Tdk Corp | 弾性表面波装置 |
JP2001168676A (ja) | 1999-09-30 | 2001-06-22 | Matsushita Electric Ind Co Ltd | 弾性表面波デバイスおよびその製造方法 |
JP2001102898A (ja) | 1999-09-30 | 2001-04-13 | Kyocera Corp | 弾性表面波装置 |
JP3435639B2 (ja) * | 2000-04-13 | 2003-08-11 | 株式会社村田製作所 | 弾性表面波装置の製造方法及び弾性表面波装置 |
JP3829644B2 (ja) | 2000-05-01 | 2006-10-04 | 株式会社村田製作所 | 表面波装置、横波トランスデューサー及び縦波トランスデューサーの製造方法 |
JP2001345657A (ja) | 2000-05-31 | 2001-12-14 | Kyocera Corp | 弾性表面波装置およびその製造方法 |
US6710682B2 (en) * | 2000-10-04 | 2004-03-23 | Matsushita Electric Industrial Co., Ltd. | Surface acoustic wave device, method for producing the same, and circuit module using the same |
EP1361657B1 (en) * | 2001-02-06 | 2013-07-24 | Panasonic Corporation | Surface acoustic wave device |
JP4058970B2 (ja) | 2001-03-21 | 2008-03-12 | セイコーエプソン株式会社 | ニオブ酸カリウム圧電薄膜を有する表面弾性波素子、周波数フィルタ、発振器、電子回路、及び電子機器 |
JP2003023187A (ja) | 2001-07-10 | 2003-01-24 | Murata Mfg Co Ltd | 高耐熱圧電素子およびそれを用いた圧電装置 |
JP3925366B2 (ja) * | 2001-10-17 | 2007-06-06 | 株式会社村田製作所 | 弾性表面波装置およびその製造方法 |
-
2004
- 2004-04-19 WO PCT/JP2004/005552 patent/WO2005002049A1/ja active Application Filing
- 2004-04-19 JP JP2005510982A patent/JP4341622B2/ja not_active Expired - Lifetime
- 2004-04-19 US US10/543,808 patent/US7282835B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JPWO2005002049A1 (ja) | 2006-08-10 |
WO2005002049A1 (ja) | 2005-01-06 |
US20060131991A1 (en) | 2006-06-22 |
US7282835B2 (en) | 2007-10-16 |
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