JP2022514664A - ファイバ供給レーザ誘起白色光システム - Google Patents
ファイバ供給レーザ誘起白色光システム Download PDFInfo
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- JP2022514664A JP2022514664A JP2021535928A JP2021535928A JP2022514664A JP 2022514664 A JP2022514664 A JP 2022514664A JP 2021535928 A JP2021535928 A JP 2021535928A JP 2021535928 A JP2021535928 A JP 2021535928A JP 2022514664 A JP2022514664 A JP 2022514664A
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- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
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- G02B6/0005—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being of the fibre type
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- H01S5/0071—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for beam steering, e.g. using a mirror outside the cavity to change the beam direction
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- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
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- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
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Abstract
Description
本出願は、2018年12月21日に出願された米国特許出願第16/230,158号の優先権を主張し、その開示は、あらゆる目的のためにその全体が参照により本明細書に組み込まれる。
従来の電球は熱エネルギーとして使用されるエネルギーの90%以上を放散する。
従来の電球はフィラメント素子の熱膨張および収縮のために、日常的に故障する。
従来の電球は広いスペクトルにわたって光を放出し、その多くは人間の目によって知覚されない。
従来の電球はすべての方向に発光するが、これは強い方向性または焦点を必要とする用途、例えば、投影ディスプレイ、光学データ記憶装置などには望ましくない。
5×1017cm-3~3×1018cm-3のSiドーピングレベルを有する厚さ100nm~3000nmのn-GaNまたはn-AlGaNクラッド層と、
2%~15%のインジウムのモル分率および20nm~250nmの厚さを有するInGaNで構成されるn側SCH層と、
1.5nm以上、任意に約12nmまでのGaNまたはInGaNバリアによって分離された、少なくとも2つの2.0nm~8.5nmのInGaN量子ウェルで構成されたシングル量子ウェルまたはマルチ量子ウェル活性領域と、
1%~10%の間のインジウムのモル分率および15nm~250nmの厚さを有するInGaNで構成されるp側SCH層、または上部GaNガイド層と、
アルミニウムのモル分率が0%~22%であり、厚さが5nm~20nmであり、MgでドープされたAlGaNで構成される電子ブロック層と、
2×1017cm-3~2×1019cm-3のMgドーピングレベルを有する400nm~1500nmの厚さのp-GaNまたはp-AlGaNクラッド層と、
1×1019cm-3~1×1021cm-3のMgドーピングレベルで、20nm~40nmの厚さのp++-GaN接点層と、を備えている。
光励起パワーの白色光ルーメンへの高い変換効率。黄色蛍光体を励起する青色レーザダイオードの例では、光学ワットあたり150ルーメン超、または光学ワットあたり200ルーメン超、または光学ワットあたり300ルーメン超の変換効率が望まれる。
1mm、500μm、200μm、100μm、または50μmの直径を有するスポットにおいて、1~20Wのレーザ出力に耐えることができる高い光損傷しきい値。
150℃超の温度、200℃超の温度、または300℃超の温度に、分解することなく耐えることができる高い熱損傷しきい値。
蛍光体が、150℃、200℃、または250℃を超える温度に達しても効率を維持するような低い熱消光特性(thermal quenching characteristic)。
熱を放散し、温度を調節するための高い熱伝導率。3W/m-K超、5W/m-K超、10W/m-K超、さらに15W/m-K超の熱伝導率が望ましい。
用途に適した蛍光体発光色。
熱伝導率または光学効率の許容できない減少なしに、コヒーレント励起の所望の散乱をもたらす適切な多孔率特性(porosity characteristic)。
用途に適した形状因子。そのような形状因子には、ブロック、プレート、ディスク、球、シリンダ、ロッド、または同様の幾何学的要素が含まれるが、これらに限定されない。適切な選択は、蛍光体が透過モードで動作するか反射モードで動作するか、および蛍光体における励起光の吸収長に応じたものになるであろう。
用途に最適化された表面条件。一例では、蛍光体表面は、改善された光抽出のために意図的に粗面化される。
Claims (34)
- 白色光を遠隔供給するための装置であって、
少なくとも1つのレーザダイオードデバイスと、
ドライバからの電力を前記少なくとも1つのレーザダイオードデバイスに結合するように構成された電気フィードスルーを有するパッケージ部材と、ここで、前記パッケージ部材は、支持部材を含み、前記少なくとも1つのレーザダイオードデバイスは、前記支持部材に設けられ、前記ドライバによって駆動されて、395nm~490nmの範囲の第1の波長によって特徴付けられるレーザ電磁放射のビームを放出し、
前記パッケージ部材に結合され、前記レーザ電磁放射を受け取る第1の端部と、伝搬方向、ビーム直径および発散を伴って第2の端部を出る長さを介して前記レーザ電磁放射を供給するための導波路輸送部材とを有する導波路アセンブリと、
光ヘッド部材に配置され、前記第2の端部から出た前記レーザ電磁放射を受け取る表面を有するように構成された蛍光体部材と、ここで、前記蛍光体部材は、前記第1の波長の前記レーザ電磁放射の少なくとも一部を第2の波長の蛍光体発光に波長変換し、前記第2の波長は、前記第1の波長よりも長く、
前記レーザ電磁放射の主伝播方向と、前記蛍光体部材の前記表面に平行な方向との間の5度~90度の範囲の入射角で前記蛍光体部材および前記導波路アセンブリの前記第2の端部を支持し、前記蛍光体部材の前記表面に前記入射したレーザ電磁放射の励起スポットを形成するように構成された、前記光ヘッド部材における機械的固定具と、を含み、前記励起スポットは25μm~5mmの範囲の直径によって特徴付けられ、前記励起スポットは、前記第1の波長の前記レーザ電磁放射と前記第2の波長の前記蛍光体発光との混合によって特徴付けられる実質的に白色発光を生成することを特徴とする装置。 - 前記少なくとも1つのレーザダイオードデバイスは、サブパッケージにおいて保持されたチップオンサブマウントのレーザダイオード(LD)チップを含み、前記LDチップは、395nm~425nmの波長範囲および425nm~490nmの波長範囲から選択された1つの波長で動作するガリウムおよび窒素含有発光領域を有する請求項1に記載の装置。
- 前記少なくとも1つのレーザダイオードデバイスは、複数のLDチップを含み、前記複数のLDチップのそれぞれは、1つ以上の光結合素子と結合されたチップオンサブマウント形態として構成され、これにより、1W未満、または約1W~約6W、または約6W~約12W、または約12W~30W、または30Wを超える集約出力パワーを有する前記レーザ電磁放射の結合ビームを得る請求項1に記載の装置。
- 前記導波路輸送部材は、約1μm~10μm、約10μm~50μm、約50μm~150μm、約150μm~500μm、約500μm~1mm、または1mmより大きいコア直径を有する、シングルモードファイバ(SMF)またはマルチモードファイバ(MMF)を備える光ファイバを含む、請求項1に記載の装置。
- 前記導波路輸送部材は、ランダムな位置に着脱可能なジョイントを含み、前記着脱可能なジョイントは、一対の機械的ファイバコネクタまたは自由空間光カプラで構成される請求項4に記載の装置。
- 前記機械的固定具は、前記光ヘッド部材において前記光ファイバの前記第2の端部を少なくとも支持する傾斜した本体を含み、これにより、前記光ファイバを出る前記レーザ電磁放射の前記主伝播方向と前記蛍光体部材の前記表面に平行な前記方向との間の前記入射角を、20度~50度までの1つ、または30度~40度までの1つにする請求項4に記載の装置。
- 前記光ファイバの前記第2の端部を出る前記レーザ電磁放射の前記励起スポットは、50μm~500μmの範囲において前記蛍光体部材の前記表面に形成される請求項4に記載の装置。
- 前記サブパッケージは、前記レーザ電磁放射の前記ビームをコリメートするために、前記支持部材上に支持されたコリメートレンズをさらに含む請求項2に記載の装置。
- 前記サブパッケージは、前記レーザ電磁放射の前記ビームを約60%以上の効率で結合するために、内側から出力ポートに結合されたフォーカスレンズをさらに含む請求項8に記載の装置。
- 前記サブパッケージは、前記コリメートレンズと前記フォーカスレンズとの間のビーム方向に対して約45度の角度で前記支持部材上に配置されたビームスプリッタをさらに含み、前記ビームスプリッタは、前記レーザビームの小部分を反射し、かつ前記レーザビームの大部分を通過させる第1の表面と、前記フォーカスレンズに向かう第1の方向に導かれる第1の部分および前記第1の方向から逸脱した第2の方向に向けられる第2の部分に、前記レーザビームの前記大部分を分割する第2の表面と、を含む請求項9に記載の装置。
- 前記サブパッケージは、青色発光が実質的にフィルタされた状態の前記レーザビームの第2の部分を監視するために、黄色スペクトルを検出するフォトダイオードを少なくとも含み、または、レーザ安全性をセンシングするために、前記レーザビームの反射された小部分の前記青色発光を検出することを特徴とする第1のフォトダイオードと、前記黄色スペクトルを検出することを特徴とする第2のフォトダイオードの両方を含み、ここで、前記少なくとも1つのレーザダイオードデバイスは、安全でない状態が検出された場合に遮断される請求項10に記載の装置。
- 前記蛍光体部材は、Ceでドープされたセラミックイットリウムアルミニウムガーネット(YAG)、またはCeでドープされた単結晶YAG、またはバインダ材料を含む粉末YAGを含み、前記蛍光体部材は、光学ワット当たり50ルーメンを超える光学変換効率、光学ワット当たり100ルーメンを超える光学変換効率、光学ワット当たり200ルーメンを超える光学変換効率、または光学ワット当たり300ルーメンを超える光学変換効率を有する請求項1に記載の装置。
- 前記パッケージ部材は、前記電気的フィードスルーと結合され、その中の前記少なくとも1つのレーザダイオードデバイスに前記ドライバからの前記電力および制御信号を供給するために前記サブパッケージを差し込むための複数のソケットに接続されたコネクタを有する電子基板をさらに含む請求項1に記載の装置。
- 前記光ヘッド部材から出力される前記白色発光は、100~500cd/mm2、500~1000cd/mm2、1000~2000cd/mm2、2000~5000cd/mm2、および5000cd/mm2より大きい輝度を含む請求項1に記載の装置。
- 白色光を遠隔供給するための装置であって、
マルチピンコネクタを有する電子基板部材を囲むパッケージケースと、
前記パッケージケース内の前記電子基板部材に差し込まれたサブパッケージにおいて構成されたレーザモジュールと、ここで、前記サブパッケージは、支持部材と、前記支持部材に取り付けられた少なくとも1つのガリウムおよび窒素含有レーザダイオードデバイスとを含み、前記少なくとも1つのガリウムおよび窒素含有レーザダイオードデバイスは、395nm~490nmの範囲の第1の波長によって特徴付けられる電磁放射のビームを放出するように構成され、
前記電磁放射のビームを前記サブパッケージの出力ポートにコリメートするように前記サブパッケージにおいて構成されたコリメートレンズと、
電気的フィードスルーに結合された前記マルチピンコネクタを伴う前記パッケージケースを密封する蓋部材と、
前記出力ポートに結合された第1の端部を有し、前記電磁放射を受け取り、主伝搬方向、ビーム直径および発散を伴って第2の端部を出るように任意の長さを介して前記電磁放射を供給する光ファイバを含むファイバアセンブリと、
前記光ファイバの前記第2の端部に結合された光ヘッド部材に遠隔配置された蛍光体部材と、ここで、前記蛍光体部材は、前記光ファイバの前記第2の端部を出る前記電磁放射を受け取り、前記第1の波長の前記電磁放射の少なくとも一部を第2の波長の蛍光体発光に波長変換するように構成された表面を有し、前記第2の波長は前記第1の波長よりも長く、
前記蛍光体部材の前記表面と前記光ファイバの前記第2の端部との間の距離を設定し、前記第2の端部を出る前記電磁放射の前記主伝搬方向と前記蛍光体部材の前記表面に平行な方向との間の入射角を設定して、25μm~5mmの範囲の直径で、前記蛍光体部材の前記表面に前記電磁放射の励起スポットを生成するように構成された前記光ヘッド部材における機械的固定具と、を含み、前記励起スポットは、前記第1の波長の前記電磁放射と前記第2の波長の前記蛍光体発光との混合によって特徴付けられる白色発光を生成することを特徴とする装置。 - 前記少なくとも1つのレーザダイオードデバイスは、前記サブパッケージにおいて保持されたチップオンサブマウントのレーザダイオード(LD)チップを含み、前記LDチップは、395nm~425nmの波長範囲、425nm~490nmの波長範囲および490nm~550nmの波長範囲から選択された1つの波長で動作するガリウムおよび窒素含有発光領域を有する請求項15に記載の装置。
- 前記少なくとも1つのレーザダイオードデバイスは、複数のLDチップを含み、前記複数のLDチップのそれぞれは、1つ以上の光結合素子と結合され、これにより、1W未満、または約1W~約6W、または約6W~約12W、または約12W~30Wの集約出力パワーを有する前記電磁放射の結合ビームを得る請求項15に記載の装置。
- 前記光ファイバは、約1μm~10μm、約10μm~50μm、約50μm~150μm、約150μm~500μm、約500μm~1mm、または1mmより大きいコア直径を有する、シングルモードファイバ(SMF)またはマルチモードファイバ(MMF)を含む請求項15に記載の装置。
- 前記ファイバアセンブリは、前記第1の端部または前記第2の端部のいずれかで着脱可能なファイバ終端アダプタを有するように、または前記第1の端部と前記第2の端部との間の前記光ファイバのランダムな位置で一対の機械的ファイバコネクタもしくは自由空間光カプラを有するように構成された着脱可能なジョイントを含む、請求項15に記載の装置。
- 前記機械的固定具は、前記光ファイバの前記第2の端部を支持して、前記光ファイバを出る前記電磁放射の前記主伝播方向と前記蛍光体部材の前記表面に平行な前記方向との間の前記入射角を、25度~30度までの1つ、または30度~35度までの1つ、または35度~40度までの1つ、または40度よりも大きいが90度よりも小さいものの1つから選択されるようにする傾斜金属本体を含む、請求項15に記載の装置。
- 前記表面上に生成される前記電磁放射の前記励起スポットは、50μm~500μmの範囲に制限される請求項15に記載の装置。
- 前記蛍光体部材は、Ceでドープされたセラミックイットリウムアルミニウムガーネット(YAG)、またはCeでドープされた単結晶YAG、またはバインダ材料を含む粉末YAGを含み、前記蛍光体部材は、光学ワット当たり50ルーメンを超える光学変換効率、光学ワット当たり100ルーメンを超える光学変換効率、光学ワット当たり200ルーメンを超える光学変換効率、または光学ワット当たり300ルーメンを超える光学変換効率を有する請求項15に記載の装置。
- 前記ファイバアセンブリは、前記出力ポートに溶接されたファイバ終端アダプタを含み、前記ファイバ終端アダプタは、前記レーザモジュールの前記サブパッケージの内側に配置され、前記光ファイバと整列したフォーカスレンズに取り付けられ、これにより、前記電磁放射を約60%以上の効率で前記光ファイバに結合する請求項15に記載の装置。
- 前記ファイバアセンブリは、前記出力ポートに溶接されたファイバ終端アダプタを含み、前記ファイバ終端アダプタは、前記光ファイバと整列して、前記レーザモジュールの前記サブパッケージの外側でフォーカスレンズを保持して、これにより、前記電磁放射を約60%以上の効率で前記光ファイバに結合する請求項15に記載の装置。
- 前記レーザモジュールは、前記コリメートレンズと前記フォーカスレンズとの間のビーム方向に対して約45度の角度で前記支持部材に配置されたビームスプリッタをさらに含み、前記ビームスプリッタは、前記レーザビームの小部分を反射し、かつ前記電磁放射の前記ビームの大部分を通過させる第1の表面と、前記フォーカスレンズに向かう第1の方向に導かれる第1の部分および前記第1の方向から逸脱した第2の方向に向けられる第2の部分に、前記電磁放射の前記ビームの前記大部分を分割する第2の表面と、を含む、請求項15に記載の装置。
- 前記レーザモジュールは、安全センシングのために前記レーザビームの前記反射された小部分の青色発光を検出するように特徴付けられた第1のフォトダイオード、および/または、前記青色発光が実質的にフィルタリングされた状態の前記レーザビームの前記第2の部分を監視するために黄色スペクトルを検出するように特徴付けられた第2のフォトダイオードをさらに含む請求項25に記載の装置。
- 前記光ヘッド部材は、前記傾斜金属本体の底部領域で前記蛍光体部材を支持するヒートシンクと、前記光ヘッド部材を密封し、前記白色発光を通過させるために、前記傾斜金属本体を覆う窓ガラスと、をさらに含む請求項20に記載の装置。
- 前記光ヘッド部材は、前記光ファイバから出て、かつ前記蛍光体部材の前記表面から反射される前記電磁放射の前記ビームの一部を遮断するために、前記傾斜金属本体の下端部に取り付けられたビームブロック部材をさらに含む請求項27に記載の装置。
- 前記電子基板部材は、複数のソケットを有するように構成されたプログラム可能な抵抗器回路基板を含み、これにより、前記レーザモジュールの前記複数のピンの直接プラグインを可能にし、はんだによる固定を可能にする請求項15に記載の装置。
- 前記蛍光体部材の前記表面の前記励起スポットによって生成される前記白色発光は、10~100lm、100~500lm、500~1000lm、1000~3000lm、および3000lmより大きいルーメンの範囲を含む請求項15に記載の装置。
- 前記白色発光は、100~500cd/mm2、500~1000cd/mm2、1000~2000cd/mm2、2000~5000cd/mm2、および5000cd/mm2より大きい輝度の白色光を生成するように構成される請求項15に記載の装置。
- オートヘッドライト用のファイバ供給レーザ誘起白色光源であって、
回路基板に差し込まれた金属ケースにパッケージされたレーザモジュールと、ここで、前記金属ケースは、支持部材と、前記支持部材に取り付けられ、395nm~490nmの範囲の波長によって特徴付けられたレーザビームを放出するように構成された少なくとも1つのレーザダイオードデバイスと、前記レーザビームを出力ポートに導くように構成されたコリメートレンズと、を囲み、
前記レーザビームを受け取り、制限するために、前記金属ケースの外側から前記出力ポートに結合されたフォーカスレンズと、
前記フォーカスレンズから前記レーザビームを受け取り、前記レーザビームを光ファイバを介して第2の端部に供給するために、前記出力ポートに整列して結合された第1の端部を有する前記光ファイバを埋め込むファイバアセンブリと、
前記光ファイバの前記第2の端部を蛍光体材料の近くに保持するオートヘッドライトモジュールに遠隔配置された光ヘッド部材とを含み、前記光ヘッド部材は、前記蛍光体材料で、前記レーザビームと前記蛍光体材料の表面に平行な方向との間の5度~90度の範囲の入射角で、前記光ファイバの前記第2の端部から出る前記レーザビームを方向付け、50μm~5mmの範囲のスポットを生成するように構成され、前記スポットにおける前記レーザビームは、前記レーザビームと部分的に混合される蛍光体励起発光を誘起し、前記オートヘッドライトモジュールの照明および投影光源としての白色発光を生成することを特徴とするファイバ供給レーザ誘起白色光源。 - 前記少なくとも1つのレーザダイオードデバイスは、395nm~425nmの波長範囲、425nm~490nmの波長範囲、および490nm~550nmの範囲から選択された1つの波長で動作するガリウムおよび窒素含有発光領域を有するチップオンサブマウントのレーザダイオード(LD)チップを含む請求項32に記載の白色光源。
- 前記白色発光は、100~500cd/mm2、500~1000cd/mm2、1000~2000cd/mm2、2000~5000cd/mm2、および5000cd/mm2より大きい輝度を有する白色光を生成するように構成される請求項32に記載の白色光源。
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US11594862B2 (en) | 2023-02-28 |
WO2020132592A1 (en) | 2020-06-25 |
JP7442531B2 (ja) | 2024-03-04 |
EP3899352A4 (en) | 2022-08-17 |
US20220123528A1 (en) | 2022-04-21 |
US11239637B2 (en) | 2022-02-01 |
US11862940B2 (en) | 2024-01-02 |
CN114096779A (zh) | 2022-02-25 |
EP3899352A1 (en) | 2021-10-27 |
US20230155352A1 (en) | 2023-05-18 |
US20200200348A1 (en) | 2020-06-25 |
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