JP2006120923A - 半導体レーザ装置 - Google Patents
半導体レーザ装置 Download PDFInfo
- Publication number
- JP2006120923A JP2006120923A JP2004308285A JP2004308285A JP2006120923A JP 2006120923 A JP2006120923 A JP 2006120923A JP 2004308285 A JP2004308285 A JP 2004308285A JP 2004308285 A JP2004308285 A JP 2004308285A JP 2006120923 A JP2006120923 A JP 2006120923A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- stripe
- refractive index
- laser device
- gan
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Geometry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Lasers (AREA)
Abstract
【解決手段】 例えばp-GaNキャップ層28およびp-Al0.1Ga0.9Nクラッド層27に幅W2のリッジ構造が形成されてなる屈折率導波構造を有し、横モードが高次モードもしくはマルチモードで発振するGaN系のストライプ型半導体レーザにおいて、ストライプ中央部とストライプ外との実効屈折率差Δnを1.5×10-2以下に設定する。
【選択図】 図1
Description
ジャパニーズ・ジャーナル・オブ・アプライド・フィジックス(Japanese Journal of Applied Physics)1995年、第34巻、第7A号、第L797-799頁
各々の発光点が接合面に平行な方向にほぼ一線に並ぶ状態に配置された複数の上記半導体レーザチップと、
各半導体レーザチップから発せられたレーザビームを各々平行光化する複数のコリメートレンズと、
該コリメートレンズを通過した複数のレーザビームをほぼ共通の点に集光する集光レンズとからなることを特徴とするものである。
1つまたは複数の該半導体レーザチップと、
該半導体レーザチップから発せられたレーザビームを各々平行光化する複数のコリメートレンズと、
該コリメートレンズを通過した複数のレーザビームをほぼ共通の点に集光する集光レンズとからなることを特徴とするものである。
21 n-GaNバッファ層
22 n-In0.1Ga0.9Nバッファ層
23 n-Al0.1Ga0.9Nクラッド層
24 n-GaN光ガイド層
25 アンドープ活性層
26 p-GaN光ガイド層
27 p-Al0.1Ga0.9Nクラッド層
28 p-GaNキャップ層
29 SiN膜
30 p電極
31 n電極
Claims (10)
- 屈折率導波構造を有し、横モードが高次モードもしくはマルチモードで発振するGaN系のストライプ型半導体レーザ装置において、ストライプ中央部とストライプ外との実効屈折率差Δnが1.5×10-2以下となっていることを特徴とする半導体レーザ装置。
- 前記実効屈折率差Δnが、5×10-3≦Δn≦1.5×10-2の範囲にあることを特徴とする請求項1記載の半導体レーザ装置。
- 前記実効屈折率差Δnが、5×10-3≦Δn≦1×10-2の範囲にあることを特徴とする請求項1記載の半導体レーザ装置。
- 前記ストライプの幅が5μm以上であることを特徴とする請求項1から3いずれか1項記載の半導体レーザ装置。
- 前記屈折率導波構造が、リッジ導波路構造であることを特徴とする請求項1から4いずれか1項記載の半導体レーザ装置。
- 前記屈折率導波構造が、内部ストライプ型導波路構造であることを特徴とする請求項1から4いずれか1項記載の半導体レーザ装置。
- 1つの半導体チップにストライプ構造を1つ備えてなることを特徴とする請求項1から6いずれか1項記載の半導体レーザ装置。
- 1つの半導体チップに、各々の発光点が接合面に平行な方向にほぼ一線に並ぶ状態にして複数のストライプ構造が設けられて、半導体レーザアレイとして形成されたことを特徴とする請求項1から6いずれか1項記載の半導体レーザ装置。
- 各々の発光点が接合面に平行な方向にほぼ一線に並ぶ状態に配置された請求項7記載の半導体レーザチップ複数と、
各半導体レーザチップから発せられたレーザビームを各々平行光化する複数のコリメートレンズと、
該コリメートレンズを通過した複数のレーザビームをほぼ共通の点に集光する集光レンズとからなる半導体レーザ装置。 - 1つまたは複数の請求項8記載の半導体レーザチップと、
該半導体レーザチップから発せられた複数のレーザビームを各々平行光化する複数のコリメートレンズと、
該コリメートレンズを通過した複数のレーザビームをほぼ共通の点に集光する集光レンズとからなる半導体レーザ装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004308285A JP2006120923A (ja) | 2004-10-22 | 2004-10-22 | 半導体レーザ装置 |
TW094136813A TWI279953B (en) | 2004-10-22 | 2005-10-21 | Semiconductor laser device |
KR1020050099640A KR20060049125A (ko) | 2004-10-22 | 2005-10-21 | 반도체 레이저 장치 |
CNA2005101164508A CN1764027A (zh) | 2004-10-22 | 2005-10-21 | 半导体激光装置 |
US11/255,932 US20060088072A1 (en) | 2004-10-22 | 2005-10-24 | Semiconductor laser apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004308285A JP2006120923A (ja) | 2004-10-22 | 2004-10-22 | 半導体レーザ装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2006120923A true JP2006120923A (ja) | 2006-05-11 |
Family
ID=36206138
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004308285A Pending JP2006120923A (ja) | 2004-10-22 | 2004-10-22 | 半導体レーザ装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20060088072A1 (ja) |
JP (1) | JP2006120923A (ja) |
KR (1) | KR20060049125A (ja) |
CN (1) | CN1764027A (ja) |
TW (1) | TWI279953B (ja) |
Cited By (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012164981A (ja) * | 2011-01-24 | 2012-08-30 | Soraa Inc | 基板部材上に構成された複数のエミッタを有するレーザーパッケージ |
US8638828B1 (en) | 2010-05-17 | 2014-01-28 | Soraa, Inc. | Method and system for providing directional light sources with broad spectrum |
US8717505B1 (en) | 2009-05-29 | 2014-05-06 | Soraa Laser Diode, Inc. | Laser based display method and system |
US8837546B1 (en) | 2009-05-29 | 2014-09-16 | Soraa Laser Diode, Inc. | Gallium nitride based laser dazzling device and method |
US9025635B2 (en) | 2011-01-24 | 2015-05-05 | Soraa Laser Diode, Inc. | Laser package having multiple emitters configured on a support member |
US9250044B1 (en) | 2009-05-29 | 2016-02-02 | Soraa Laser Diode, Inc. | Gallium and nitrogen containing laser diode dazzling devices and methods of use |
US9287684B2 (en) | 2011-04-04 | 2016-03-15 | Soraa Laser Diode, Inc. | Laser package having multiple emitters with color wheel |
US9787963B2 (en) | 2015-10-08 | 2017-10-10 | Soraa Laser Diode, Inc. | Laser lighting having selective resolution |
US9800017B1 (en) | 2009-05-29 | 2017-10-24 | Soraa Laser Diode, Inc. | Laser device and method for a vehicle |
US9829780B2 (en) | 2009-05-29 | 2017-11-28 | Soraa Laser Diode, Inc. | Laser light source for a vehicle |
US10108079B2 (en) | 2009-05-29 | 2018-10-23 | Soraa Laser Diode, Inc. | Laser light source for a vehicle |
US10222474B1 (en) | 2017-12-13 | 2019-03-05 | Soraa Laser Diode, Inc. | Lidar systems including a gallium and nitrogen containing laser light source |
US10551728B1 (en) | 2018-04-10 | 2020-02-04 | Soraa Laser Diode, Inc. | Structured phosphors for dynamic lighting |
US10771155B2 (en) | 2017-09-28 | 2020-09-08 | Soraa Laser Diode, Inc. | Intelligent visible light with a gallium and nitrogen containing laser source |
US11239637B2 (en) | 2018-12-21 | 2022-02-01 | Kyocera Sld Laser, Inc. | Fiber delivered laser induced white light system |
JP2022523725A (ja) * | 2019-02-02 | 2022-04-26 | ヌブル インク | 高信頼性、高パワー、高輝度の青色レーザーダイオードシステムおよびその製造方法 |
US11421843B2 (en) | 2018-12-21 | 2022-08-23 | Kyocera Sld Laser, Inc. | Fiber-delivered laser-induced dynamic light system |
US11884202B2 (en) | 2019-01-18 | 2024-01-30 | Kyocera Sld Laser, Inc. | Laser-based fiber-coupled white light system |
US12000552B2 (en) | 2019-04-10 | 2024-06-04 | Kyocera Sld Laser, Inc. | Laser-based fiber-coupled white light system for a vehicle |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102008021674A1 (de) * | 2008-03-31 | 2009-10-01 | Osram Opto Semiconductors Gmbh | Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements |
CN103608706B (zh) | 2011-05-23 | 2016-10-19 | 慧与发展有限责任合伙企业 | 光传输*** |
KR101897257B1 (ko) * | 2012-05-14 | 2018-09-11 | 한국전자통신연구원 | 광 검출기 및 그를 구비한 광학 소자 |
CN104377548A (zh) * | 2014-12-11 | 2015-02-25 | 北京工业大学 | 一种白光半导体激光器 |
CN104393488A (zh) * | 2014-12-11 | 2015-03-04 | 北京工业大学 | 一种三波长镓氮基半导体激光芯片结构 |
CN104377549A (zh) * | 2014-12-11 | 2015-02-25 | 北京工业大学 | 一种四波长镓氮基半导体激光芯片结构 |
CN111404024B (zh) * | 2020-03-27 | 2021-05-11 | 中国科学院半导体研究所 | 具有复合波导层的氮化镓基近紫外激光器 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06310801A (ja) * | 1993-04-26 | 1994-11-04 | Yokogawa Electric Corp | 半導体レーザ |
JP2000232257A (ja) * | 1999-02-10 | 2000-08-22 | Matsushita Electric Ind Co Ltd | 窒化物半導体レーザ装置 |
JP2000357842A (ja) * | 1999-06-16 | 2000-12-26 | Sony Corp | 半導体レーザ |
US20020018499A1 (en) * | 2000-04-06 | 2002-02-14 | Toshiaki Kuniyasu | Semiconductor laser element and semiconductor laser |
JP2002324948A (ja) * | 2001-04-25 | 2002-11-08 | Furukawa Electric Co Ltd:The | 半導体レーザ及びレーザモジュール |
JP2002324943A (ja) * | 2001-04-26 | 2002-11-08 | Furukawa Electric Co Ltd:The | 自己整合型半導体レーザ素子 |
JP2004126001A (ja) * | 2002-09-30 | 2004-04-22 | Fuji Photo Film Co Ltd | レーザ装置 |
JP2004233885A (ja) * | 2003-01-31 | 2004-08-19 | Fuji Photo Film Co Ltd | レーザモジュールおよびその製造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2596709B2 (ja) * | 1994-04-06 | 1997-04-02 | 都築 省吾 | 半導体レーザ素子を用いた照明用光源装置 |
JPH09297331A (ja) * | 1996-04-30 | 1997-11-18 | Fuji Photo Film Co Ltd | 短波長レーザ装置 |
JP2002351086A (ja) * | 2001-03-22 | 2002-12-04 | Fuji Photo Film Co Ltd | 露光装置 |
TWI347054B (en) * | 2003-07-11 | 2011-08-11 | Nichia Corp | Nitride semiconductor laser device and method of manufacturing the nitride semiconductor laser device |
-
2004
- 2004-10-22 JP JP2004308285A patent/JP2006120923A/ja active Pending
-
2005
- 2005-10-21 KR KR1020050099640A patent/KR20060049125A/ko not_active Application Discontinuation
- 2005-10-21 TW TW094136813A patent/TWI279953B/zh active
- 2005-10-21 CN CNA2005101164508A patent/CN1764027A/zh active Pending
- 2005-10-24 US US11/255,932 patent/US20060088072A1/en not_active Abandoned
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06310801A (ja) * | 1993-04-26 | 1994-11-04 | Yokogawa Electric Corp | 半導体レーザ |
JP2000232257A (ja) * | 1999-02-10 | 2000-08-22 | Matsushita Electric Ind Co Ltd | 窒化物半導体レーザ装置 |
JP2000357842A (ja) * | 1999-06-16 | 2000-12-26 | Sony Corp | 半導体レーザ |
US20020018499A1 (en) * | 2000-04-06 | 2002-02-14 | Toshiaki Kuniyasu | Semiconductor laser element and semiconductor laser |
JP2002324948A (ja) * | 2001-04-25 | 2002-11-08 | Furukawa Electric Co Ltd:The | 半導体レーザ及びレーザモジュール |
JP2002324943A (ja) * | 2001-04-26 | 2002-11-08 | Furukawa Electric Co Ltd:The | 自己整合型半導体レーザ素子 |
JP2004126001A (ja) * | 2002-09-30 | 2004-04-22 | Fuji Photo Film Co Ltd | レーザ装置 |
JP2004233885A (ja) * | 2003-01-31 | 2004-08-19 | Fuji Photo Film Co Ltd | レーザモジュールおよびその製造方法 |
Cited By (84)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9829778B2 (en) | 2009-05-29 | 2017-11-28 | Soraa Laser Diode, Inc. | Laser light source |
US11088507B1 (en) | 2009-05-29 | 2021-08-10 | Kyocera Sld Laser, Inc. | Laser source apparatus |
US8717505B1 (en) | 2009-05-29 | 2014-05-06 | Soraa Laser Diode, Inc. | Laser based display method and system |
US8749719B2 (en) | 2009-05-29 | 2014-06-10 | Soraa Laser Diode, Inc. | Laser based display method and system |
US8773598B2 (en) | 2009-05-29 | 2014-07-08 | Soraa Laser Diode, Inc. | Laser based display method and system |
US8837546B1 (en) | 2009-05-29 | 2014-09-16 | Soraa Laser Diode, Inc. | Gallium nitride based laser dazzling device and method |
US11016378B2 (en) | 2009-05-29 | 2021-05-25 | Kyocera Sld Laser, Inc. | Laser light source |
US8908731B1 (en) | 2009-05-29 | 2014-12-09 | Soraa Laser Diode, Inc. | Gallium nitride based laser dazzling device and method |
US9014229B1 (en) | 2009-05-29 | 2015-04-21 | Soraa Laser Diode, Inc. | Gallium nitride based laser dazzling method |
US9013638B2 (en) | 2009-05-29 | 2015-04-21 | Soraa Laser Diode, Inc. | Laser based display method and system |
US9019437B2 (en) | 2009-05-29 | 2015-04-28 | Soraa Laser Diode, Inc. | Laser based display method and system |
US10904506B1 (en) | 2009-05-29 | 2021-01-26 | Soraa Laser Diode, Inc. | Laser device for white light |
US9100590B2 (en) | 2009-05-29 | 2015-08-04 | Soraa Laser Diode, Inc. | Laser based display method and system |
US11619871B2 (en) | 2009-05-29 | 2023-04-04 | Kyocera Sld Laser, Inc. | Laser based display system |
US9250044B1 (en) | 2009-05-29 | 2016-02-02 | Soraa Laser Diode, Inc. | Gallium and nitrogen containing laser diode dazzling devices and methods of use |
US11101618B1 (en) | 2009-05-29 | 2021-08-24 | Kyocera Sld Laser, Inc. | Laser device for dynamic white light |
US11796903B2 (en) | 2009-05-29 | 2023-10-24 | Kyocera Sld Laser, Inc. | Laser based display system |
US10297977B1 (en) | 2009-05-29 | 2019-05-21 | Soraa Laser Diode, Inc. | Laser device and method for a vehicle |
US11817675B1 (en) | 2009-05-29 | 2023-11-14 | Kyocera Sld Laser, Inc. | Laser device for white light |
US10205300B1 (en) | 2009-05-29 | 2019-02-12 | Soraa Laser Diode, Inc. | Gallium and nitrogen containing laser diode dazzling devices and methods of use |
US10108079B2 (en) | 2009-05-29 | 2018-10-23 | Soraa Laser Diode, Inc. | Laser light source for a vehicle |
US9800017B1 (en) | 2009-05-29 | 2017-10-24 | Soraa Laser Diode, Inc. | Laser device and method for a vehicle |
US10084281B1 (en) | 2009-05-29 | 2018-09-25 | Soraa Laser Diode, Inc. | Laser device and method for a vehicle |
US9829780B2 (en) | 2009-05-29 | 2017-11-28 | Soraa Laser Diode, Inc. | Laser light source for a vehicle |
US11791606B1 (en) | 2010-05-17 | 2023-10-17 | Kyocera Sld Laser, Inc. | Method and system for providing directional light sources with broad spectrum |
US9362720B1 (en) | 2010-05-17 | 2016-06-07 | Soraa Laser Diode, Inc. | Method and system for providing directional light sources with broad spectrum |
US9837790B1 (en) | 2010-05-17 | 2017-12-05 | Soraa Laser Diode, Inc. | Method and system for providing directional light sources with broad spectrum |
US8638828B1 (en) | 2010-05-17 | 2014-01-28 | Soraa, Inc. | Method and system for providing directional light sources with broad spectrum |
US8848755B1 (en) | 2010-05-17 | 2014-09-30 | Soraa Laser Diode, Inc. | Method and system for providing directional light sources with broad spectrum |
US10923878B1 (en) | 2010-05-17 | 2021-02-16 | Soraa Laser Diode, Inc. | Method and system for providing directional light sources with broad spectrum |
US10122148B1 (en) | 2010-05-17 | 2018-11-06 | Soraa Laser Diodide, Inc. | Method and system for providing directional light sources with broad spectrum |
US9106049B1 (en) | 2010-05-17 | 2015-08-11 | Soraa Laser Diode, Inc. | Method and system for providing directional light sources with broad spectrum |
US10505344B1 (en) | 2010-05-17 | 2019-12-10 | Soraa Laser Diode, Inc. | Method and system for providing directional light sources with broad spectrum |
US11543590B2 (en) | 2011-01-24 | 2023-01-03 | Kyocera Sld Laser, Inc. | Optical module having multiple laser diode devices and a support member |
US10655800B2 (en) | 2011-01-24 | 2020-05-19 | Soraa Laser Diode, Inc. | Laser package having multiple emitters configured on a support member |
US9810383B2 (en) | 2011-01-24 | 2017-11-07 | Soraa Laser Diode, Inc. | Laser package having multiple emitters configured on a support member |
US10247366B2 (en) | 2011-01-24 | 2019-04-02 | Soraa Laser Diode, Inc. | Laser package having multiple emitters configured on a support member |
US9025635B2 (en) | 2011-01-24 | 2015-05-05 | Soraa Laser Diode, Inc. | Laser package having multiple emitters configured on a support member |
US9595813B2 (en) | 2011-01-24 | 2017-03-14 | Soraa Laser Diode, Inc. | Laser package having multiple emitters configured on a substrate member |
US9835296B2 (en) | 2011-01-24 | 2017-12-05 | Soraa Laser Diode, Inc. | Laser package having multiple emitters configured on a support member |
US11573374B2 (en) | 2011-01-24 | 2023-02-07 | Kyocera Sld Laser, Inc. | Gallium and nitrogen containing laser module configured for phosphor pumping |
JP2012164981A (ja) * | 2011-01-24 | 2012-08-30 | Soraa Inc | 基板部材上に構成された複数のエミッタを有するレーザーパッケージ |
US9371970B2 (en) | 2011-01-24 | 2016-06-21 | Soraa Laser Diode, Inc. | Laser package having multiple emitters configured on a support member |
US11742634B1 (en) | 2011-04-04 | 2023-08-29 | Kyocera Sld Laser, Inc. | Laser bar device having multiple emitters |
US9716369B1 (en) | 2011-04-04 | 2017-07-25 | Soraa Laser Diode, Inc. | Laser package having multiple emitters with color wheel |
US10587097B1 (en) | 2011-04-04 | 2020-03-10 | Soraa Laser Diode, Inc. | Laser bar device having multiple emitters |
US9287684B2 (en) | 2011-04-04 | 2016-03-15 | Soraa Laser Diode, Inc. | Laser package having multiple emitters with color wheel |
US11005234B1 (en) | 2011-04-04 | 2021-05-11 | Kyocera Sld Laser, Inc. | Laser bar device having multiple emitters |
US10050415B1 (en) | 2011-04-04 | 2018-08-14 | Soraa Laser Diode, Inc. | Laser device having multiple emitters |
US11172182B2 (en) | 2015-10-08 | 2021-11-09 | Kyocera Sld Laser, Inc. | Laser lighting having selective resolution |
US10506210B2 (en) | 2015-10-08 | 2019-12-10 | Soraa Laser Diode, Inc. | Laser lighting having selective resolution |
US9787963B2 (en) | 2015-10-08 | 2017-10-10 | Soraa Laser Diode, Inc. | Laser lighting having selective resolution |
US11800077B2 (en) | 2015-10-08 | 2023-10-24 | Kyocera Sld Laser, Inc. | Laser lighting having selective resolution |
US10771155B2 (en) | 2017-09-28 | 2020-09-08 | Soraa Laser Diode, Inc. | Intelligent visible light with a gallium and nitrogen containing laser source |
US11502753B2 (en) | 2017-09-28 | 2022-11-15 | Kyocera Sld Laser, Inc. | Intelligent visible light with a gallium and nitrogen containing laser source |
US11153011B2 (en) | 2017-09-28 | 2021-10-19 | Kyocera Sld Laser, Inc. | Intelligent visible light with a gallium and nitrogen containing laser source |
US10880005B2 (en) | 2017-09-28 | 2020-12-29 | Soraa Laser Diode, Inc. | Laser based white light source configured for communication |
US11870495B2 (en) | 2017-09-28 | 2024-01-09 | Kyocera Sld Laser, Inc. | Intelligent visible light with a gallium and nitrogen containing laser source |
US11121772B2 (en) | 2017-09-28 | 2021-09-14 | Kyocera Sld Laser, Inc. | Smart laser light for a vehicle |
US11677468B2 (en) | 2017-09-28 | 2023-06-13 | Kyocera Sld Laser, Inc. | Laser based white light source configured for communication |
US10784960B2 (en) | 2017-09-28 | 2020-09-22 | Soraa Laser Diode, Inc. | Fiber delivered laser based white light source configured for communication |
US11277204B2 (en) | 2017-09-28 | 2022-03-15 | Kyocera Sld Laser, Inc. | Laser based white light source configured for communication |
US10873395B2 (en) | 2017-09-28 | 2020-12-22 | Soraa Laser Diode, Inc. | Smart laser light for communication |
US10345446B2 (en) | 2017-12-13 | 2019-07-09 | Soraa Laser Diode, Inc. | Integrated laser lighting and LIDAR system |
US11231499B2 (en) | 2017-12-13 | 2022-01-25 | Kyocera Sld Laser, Inc. | Distance detecting systems for use in automotive applications including gallium and nitrogen containing laser diodes |
US11199628B2 (en) | 2017-12-13 | 2021-12-14 | Kyocera Sld Laser, Inc. | Distance detecting systems including gallium and nitrogen containing laser diodes |
US11867813B2 (en) | 2017-12-13 | 2024-01-09 | Kyocera Sld Laser, Inc. | Distance detecting systems for use in mobile machines including gallium and nitrogen containing laser diodes |
US11287527B2 (en) | 2017-12-13 | 2022-03-29 | Kyocera Sld Laser, Inc. | Distance detecting systems for use in mobile machines including gallium and nitrogen containing laser diodes |
US11841429B2 (en) | 2017-12-13 | 2023-12-12 | Kyocera Sld Laser, Inc. | Distance detecting systems for use in mobile machine applications |
US10222474B1 (en) | 2017-12-13 | 2019-03-05 | Soraa Laser Diode, Inc. | Lidar systems including a gallium and nitrogen containing laser light source |
US11249189B2 (en) | 2017-12-13 | 2022-02-15 | Kyocera Sld Laser, Inc. | Distance detecting systems for use in mobile machines including gallium and nitrogen containing laser diodes |
US10338220B1 (en) | 2017-12-13 | 2019-07-02 | Soraa Laser Diode, Inc. | Integrated lighting and LIDAR system |
US10649086B2 (en) | 2017-12-13 | 2020-05-12 | Soraa Laser Diode, Inc. | Lidar systems including a gallium and nitrogen containing laser light source |
US10551728B1 (en) | 2018-04-10 | 2020-02-04 | Soraa Laser Diode, Inc. | Structured phosphors for dynamic lighting |
US11811189B1 (en) | 2018-04-10 | 2023-11-07 | Kyocera Sld Laser, Inc. | Structured phosphors for dynamic lighting |
US10809606B1 (en) | 2018-04-10 | 2020-10-20 | Soraa Laser Diode, Inc. | Structured phosphors for dynamic lighting |
US11294267B1 (en) | 2018-04-10 | 2022-04-05 | Kyocera Sld Laser, Inc. | Structured phosphors for dynamic lighting |
US11788699B2 (en) | 2018-12-21 | 2023-10-17 | Kyocera Sld Laser, Inc. | Fiber-delivered laser-induced dynamic light system |
US11239637B2 (en) | 2018-12-21 | 2022-02-01 | Kyocera Sld Laser, Inc. | Fiber delivered laser induced white light system |
US11594862B2 (en) | 2018-12-21 | 2023-02-28 | Kyocera Sld Laser, Inc. | Fiber delivered laser induced white light system |
US11421843B2 (en) | 2018-12-21 | 2022-08-23 | Kyocera Sld Laser, Inc. | Fiber-delivered laser-induced dynamic light system |
US11884202B2 (en) | 2019-01-18 | 2024-01-30 | Kyocera Sld Laser, Inc. | Laser-based fiber-coupled white light system |
JP2022523725A (ja) * | 2019-02-02 | 2022-04-26 | ヌブル インク | 高信頼性、高パワー、高輝度の青色レーザーダイオードシステムおよびその製造方法 |
US12000552B2 (en) | 2019-04-10 | 2024-06-04 | Kyocera Sld Laser, Inc. | Laser-based fiber-coupled white light system for a vehicle |
Also Published As
Publication number | Publication date |
---|---|
TWI279953B (en) | 2007-04-21 |
US20060088072A1 (en) | 2006-04-27 |
KR20060049125A (ko) | 2006-05-18 |
CN1764027A (zh) | 2006-04-26 |
TW200631268A (en) | 2006-09-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2006120923A (ja) | 半導体レーザ装置 | |
JP4617907B2 (ja) | 光集積型半導体発光素子 | |
US6873635B2 (en) | Nitride semiconductor laser device and optical information reproduction apparatus using the same | |
JP2007095736A (ja) | 半導体レーザ装置 | |
US9368940B2 (en) | Semiconductor device and manufacturing method of semiconductor device | |
EP2770592A2 (en) | Semiconductor light emitting element and display device | |
US20050180475A1 (en) | Semiconductor laser device | |
JP2009117578A (ja) | 面発光レーザダイオード | |
JPH11274642A (ja) | 半導体発光素子及びその製造方法 | |
JP4935676B2 (ja) | 半導体発光素子 | |
JP4847682B2 (ja) | 窒化物半導体素子およびその製造方法 | |
JPH09307190A (ja) | AlInGaN系半導体発光素子および半導体発光装置 | |
JP4565350B2 (ja) | 半導体レーザ装置 | |
JPH09266351A (ja) | AlInGaN系半導体発光素子 | |
JP3933637B2 (ja) | 窒化ガリウム系半導体レーザ素子 | |
JPH1187856A (ja) | 窒化ガリウム系化合物半導体レーザ及びその製造方法 | |
JP2006253235A (ja) | レーザダイオードチップ、レーザダイオード及びレーザダイオードチップの製造方法 | |
JP2007012729A (ja) | 窒化ガリウム系半導体レーザ装置 | |
JPH10270791A (ja) | 光情報処理装置およびこれに適した半導体発光装置 | |
JP2004014818A (ja) | 半導体レーザ素子 | |
JPH1126877A (ja) | 発光素子及びその製造方法および光ディスク装置 | |
JP2007227652A (ja) | 2波長半導体発光装置及びその製造方法 | |
JP2002237657A (ja) | 半導体レーザアレイおよび電子写真システムおよび光通信システムおよび光ピックアップシステム | |
JP3674139B2 (ja) | 可視光半導体レーザ | |
JP4556591B2 (ja) | 半導体レーザ装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A712 Effective date: 20061208 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20070326 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20091222 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100105 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20101207 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20111011 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120111 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20120214 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20120214 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20120306 |
|
A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20120330 |