JP2017224753A - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
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- JP2017224753A JP2017224753A JP2016119828A JP2016119828A JP2017224753A JP 2017224753 A JP2017224753 A JP 2017224753A JP 2016119828 A JP2016119828 A JP 2016119828A JP 2016119828 A JP2016119828 A JP 2016119828A JP 2017224753 A JP2017224753 A JP 2017224753A
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- semiconductor device
- insulating layer
- insulating film
- interlayer insulating
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 84
- 238000000034 method Methods 0.000 title claims abstract description 31
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 229910052751 metal Inorganic materials 0.000 claims abstract description 93
- 239000002184 metal Substances 0.000 claims abstract description 93
- 239000010410 layer Substances 0.000 claims description 85
- 239000011229 interlayer Substances 0.000 claims description 84
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 12
- 239000010949 copper Substances 0.000 claims description 11
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 11
- 229910052721 tungsten Inorganic materials 0.000 claims description 11
- 239000010937 tungsten Substances 0.000 claims description 11
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 230000001681 protective effect Effects 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
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- 239000000758 substrate Substances 0.000 description 19
- 229920002120 photoresistant polymer Polymers 0.000 description 12
- 238000000206 photolithography Methods 0.000 description 10
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- 239000012535 impurity Substances 0.000 description 7
- 238000002161 passivation Methods 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
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- 150000002500 ions Chemical class 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
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- 239000000395 magnesium oxide Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
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- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- WNUPENMBHHEARK-UHFFFAOYSA-N silicon tungsten Chemical compound [Si].[W] WNUPENMBHHEARK-UHFFFAOYSA-N 0.000 description 2
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- 229910018182 Al—Cu Inorganic materials 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- MXSJNBRAMXILSE-UHFFFAOYSA-N [Si].[P].[B] Chemical compound [Si].[P].[B] MXSJNBRAMXILSE-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
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- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
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- 229910052719 titanium Inorganic materials 0.000 description 1
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Abstract
【解決手段】この半導体装置の製造方法は、第1の金属層からなる第1のパッドを形成する工程(a)と、第1のパッド上に絶縁層を形成する工程(b)と、第1のパッドの少なくとも一部の領域上の絶縁層を除去することにより、絶縁層に開口部を設ける工程(c)と、絶縁層の膜厚よりも小さい膜厚を有するように、絶縁層の開口部に第2の金属層からなる第2のパッドを形成する工程(d)と、第2のパッド上に第3の金属層からなる第3のパッドを形成する工程(e)とを備える。
【選択図】図16
Description
<半導体装置の製造方法>
図1〜図15は、本発明の一実施形態に係る半導体装置の製造工程における断面図である。以下においては、一例として、P型の半導体基板を用いてNチャネルMOSトランジスターを含む半導体装置を製造する場合について説明する。
図16は、本発明の一実施形態に係る半導体装置の断面図であり、図17は、本発明の一実施形態に係る半導体装置の平面図である。図16及び図17に示すように、本発明の一実施形態に係る半導体装置は、半導体基板10と、層間絶縁膜20と、金属配線31及び32と、層間絶縁膜40と、金属配線51及び第1のパッド52と、層間絶縁膜60と、第2のパッド72と、第3のパッド81と、パッシベーション膜90とを備えている。
Claims (12)
- 第1の金属層からなる第1のパッドを形成する工程(a)と、
前記第1のパッド上に絶縁層を形成する工程(b)と、
前記第1のパッドの少なくとも一部の領域上の前記絶縁層を除去することにより、前記絶縁層に開口部を設ける工程(c)と、
前記絶縁層の膜厚よりも小さい膜厚を有するように、前記絶縁層の前記開口部に第2の金属層からなる第2のパッドを形成する工程(d)と、
前記第2のパッド上に第3の金属層からなる第3のパッドを形成する工程(e)と、
を備える半導体装置の製造方法。 - 工程(c)が、前記絶縁層に前記開口部の開口径よりも小さい開口径を有するスルーホールを設けることを含み、
工程(d)が、前記絶縁層の膜厚よりも大きい膜厚を有するように、前記絶縁層の前記スルーホールに前記第2の金属層を形成することを含む、
請求項1記載の製造方法。 - 工程(d)が、前記絶縁層の上層に形成された前記第2の金属層を除去することをさらに含む、請求項2記載の製造方法。
- 前記第3のパッドに銅(Cu)のワイヤーの一端をボンディングする工程(f)をさらに備える、請求項1〜3のいずれか1項記載の製造方法。
- 第1の金属層からなる第1のパッドと、
前記第1のパッド上に配置され、開口部を有する絶縁層と、
前記絶縁層の前記開口部に配置されて前記絶縁層の膜厚よりも小さい膜厚を有し、第2の金属層からなる第2のパッドと、
前記第2のパッド上に配置され、第3の金属層からなる第3のパッドと、
を備える半導体装置。 - 平面視で前記第3のパッドの周辺部を覆う保護膜をさらに備え、
前記保護膜で覆われていない前記第3のパッドの領域の下層において前記第2のパッドが一様な膜厚を有する、請求項5記載の半導体装置。 - 前記第2のパッドが、前記第1のパッドに沿って配置された底部と、前記絶縁層の前記開口部の4つの側面に沿って配置された4つの側壁とで構成される箱型の形状を有する、請求項5又は6記載の半導体装置。
- 前記絶縁層が、前記開口部の開口径よりも小さい開口径を有するスルーホールをさらに有し、
前記絶縁層の前記スルーホールに配置されて前記第1及び第3のパッドに電気的に接続されたプラグをさらに備える、請求項5〜7のいずれか1項記載の半導体装置。 - 前記第1のパッドが、1.5μm以下の膜厚を有する、請求項5〜8のいずれか1項記載の半導体装置。
- 前記第2のパッドが、前記第1及び第3のパッドの各々のヤング率よりも大きいヤング率を有する、請求項5〜9のいずれか1項記載の半導体装置。
- 前記第1及び第3のパッドの各々が、アルミニウム(Al)を含み、前記第2のパッドが、タングステン(W)を含む、請求項5〜10のいずれか1項記載の半導体装置。
- 前記第1のパッドが、FSG(フッ素をドープした珪酸塩ガラス)又はLow-k材料を含む層間絶縁膜上に配置されている、請求項5〜11のいずれか1項記載の半導体装置。
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2016
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CN107527821B (zh) | 2023-04-07 |
US10236248B2 (en) | 2019-03-19 |
CN107527821A (zh) | 2017-12-29 |
US20170365549A1 (en) | 2017-12-21 |
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