JP2016533025A - ウエハの裏側及び表側からのウエハダイシング - Google Patents
ウエハの裏側及び表側からのウエハダイシング Download PDFInfo
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
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- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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Abstract
Description
本出願は、本明細書で参照されることによって、その内容の全体が本明細書に組み込まれる、2013年9月19日に出願された米国仮特許出願番号61/879,787の利益を主張する。
Claims (15)
- 表側の複数の集積回路及び裏側のメタライゼーションを備えた半導体ウエハのダイシング方法であって、前記方法が、
第1のレーザースクライビング処理によって、前記裏側の前記メタライゼーションをパターニングし、前記裏側に第1の複数のレーザースクライブラインを提供すること、
前記表側にマスクを形成すること、
第2のレーザースクライビング処理によって、前記表側から、前記マスクをパターニングし、前記集積回路の間に前記半導体ウエハの領域を露出させる第2の複数のスクライブラインを、パターニングされたマスクに提供することであって、前記第2の複数のスクライブラインが、前記第1の複数のスクライブラインと位置合わせされる、パターニングされたマスクに提供すること、及び
前記第2の複数のスクライブラインを通って、前記半導体ウエハをプラズマエッチングし、前記集積回路を個片化することを含む、方法。 - 前記第1のレーザースクライビング処理の間に、前記半導体ウエハの前記裏側にダイマーキングすることを更に含む、請求項1に記載の方法。
- 前記第1及び第2のレーザースクライビング処理が、同じレーザー条件を使用することを含む、請求項1に記載の方法。
- 前記第1及び第2のレーザースクライビング処理が、フェムト秒ベースのレーザーを用いることを含む、請求項1に記載の方法。
- 前記第1の複数のスクライブラインが、前記半導体ウエハの前記裏側の中へ部分的に形成されたトレンチを含む、請求項1に記載の方法。
- 前記第2の複数のスクライブラインが、前記半導体ウエハの前記表側の中へ部分的に形成されたトレンチを含む、請求項1に記載の方法。
- 前記表側に前記マスクを形成することが、水溶性マスクを形成することを含む、請求項1に記載の方法。
- 前記表側に前記マスクを形成することが、UV硬化性マスクを形成することを含む、請求項1に記載の方法。
- 前記半導体ウエハが、単結晶シリコン基板である、請求項1に記載の方法。
- 表側の複数の集積回路及び裏側のメタライゼーションを備えた半導体ウエハのダイシング方法であって、前記方法が、
前記半導体ウエハの前記表側にマスクを形成することであって、前記メタライゼーション及び前記半導体ウエハの前記裏側が、内部に第1の複数のスクライブラインを有する、マスクを形成すること、
レーザースクライビング処理によって、前記表側から、前記マスクをパターニングし、前記集積回路の間に前記半導体ウエハの領域を露出させる第2の複数のスクライブラインを、パターニングされたマスクに提供することであって、前記第2の複数のスクライブラインが、前記第1の複数のスクライブラインと位置合わせされる、パターニングされたマスクに提供すること、並びに
前記第2の複数のスクライブラインを通って、前記半導体ウエハをプラズマエッチングし、前記集積回路を個片化することを含む、方法。 - 前記レーザースクライビング処理が、フェムト秒ベースのレーザーを用いることを含む、請求項10に記載の方法。
- 前記第1の複数のスクライブラインが、前記半導体ウエハの前記裏側の中へ部分的に形成されたトレンチを含む、請求項10に記載の方法。
- 前記第2の複数のスクライブラインが、前記半導体ウエハの前記表側の中へ部分的に形成されたトレンチを含む、請求項10に記載の方法。
- 前記表側に前記マスクを形成することが、水溶性マスクを形成することを含む、請求項10に記載の方法。
- 前記表側に前記マスクを形成することが、UV硬化性マスクを形成することを含む、請求項10に記載の方法。
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KR102475490B1 (ko) | 2017-04-04 | 2022-12-07 | 가부시기가이샤 디스코 | 가공 방법 |
KR20190089734A (ko) * | 2018-01-23 | 2019-07-31 | 가부시기가이샤 디스코 | 가공 방법, 에칭 장치, 및 레이저 가공 장치 |
KR102582783B1 (ko) * | 2018-01-23 | 2023-09-25 | 가부시기가이샤 디스코 | 가공 방법, 에칭 장치, 및 레이저 가공 장치 |
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EP3869546B1 (en) | 2024-05-15 |
WO2015041842A1 (en) | 2015-03-26 |
EP3047517A4 (en) | 2017-05-03 |
EP3047517A1 (en) | 2016-07-27 |
ES2871419T3 (es) | 2021-10-28 |
US9224650B2 (en) | 2015-12-29 |
JP6422484B2 (ja) | 2018-11-14 |
EP3047517B1 (en) | 2021-03-17 |
KR20160055933A (ko) | 2016-05-18 |
EP3869546A1 (en) | 2021-08-25 |
TWI655684B (zh) | 2019-04-01 |
PT3047517T (pt) | 2021-05-27 |
US20150079761A1 (en) | 2015-03-19 |
TW201517153A (zh) | 2015-05-01 |
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