JP2016225496A - 半導体裏面用フィルム及びその用途 - Google Patents
半導体裏面用フィルム及びその用途 Download PDFInfo
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- JP2016225496A JP2016225496A JP2015111442A JP2015111442A JP2016225496A JP 2016225496 A JP2016225496 A JP 2016225496A JP 2015111442 A JP2015111442 A JP 2015111442A JP 2015111442 A JP2015111442 A JP 2015111442A JP 2016225496 A JP2016225496 A JP 2016225496A
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- film
- semiconductor
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- resin
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Images
Classifications
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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- H—ELECTRICITY
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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Abstract
Description
25℃での破断伸度が700%以下である半導体裏面用フィルムに関する。
前記ダイシングテープ一体型半導体裏面用フィルムにおける半導体裏面用フィルム上に半導体ウェハを貼着する工程と、
切り込み深さを前記粘着剤層における前記半導体裏面用フィルム側の面を超え、かつ前記基材側の面に至らない範囲に設定して前記半導体ウェハをダイシングして半導体チップを形成する工程と、
前記半導体チップを前記半導体裏面用フィルムとともに、ダイシングテープの粘着剤層から剥離する工程と、
前記半導体チップを前記被着体上にフリップチップ接続する工程とを具備する半導体装置の製造方法に関する。
図1で示されるように、ダイシングテープ一体型半導体裏面用フィルム1は、基材31上に粘着剤層32が設けられたダイシングテープ3と、前記粘着剤層上に設けられ、フリップチップ型半導体に好適な半導体裏面用フィルム2とを備える構成である。また、本発明のダイシングテープ一体型半導体裏面用フィルムは、図1で示されているように、ダイシングテープ3の粘着剤層32上において、半導体ウェハの貼着部分に対応する部分33のみに半導体裏面用フィルム2が形成された構成であってもよいが、粘着剤層32の全面に半導体裏面用フィルムが形成された構成でもよく、また、半導体ウェハの貼着部分に対応する部分33より大きく且つ粘着剤層32の全面よりも小さい部分に半導体裏面用フィルムが形成された構成でもよい。なお、半導体裏面用フィルム2の表面(ウェハの裏面に貼着される側の表面)は、ウェハ裏面に貼着されるまでの間、セパレータ等により保護されていてもよい。
半導体裏面用フィルム2(図1参照)はフィルム状の形態を有している。半導体裏面用フィルム2は、半導体チップ等の半導体素子の裏面の保護及び強度向上等のために好適に用いられる。半導体裏面用フィルム2は、通常、それ単独の形態でも、ダイシングテープ一体型半導体裏面用フィルムの形態でも、未硬化状態(半硬化状態を含む)であり、半導体裏面用フィルムを半導体ウェハに貼着させた後に熱硬化される。
半導体裏面用フィルムから約0.1gをサンプリングして精秤し(試料の重量)、該サンプルをメッシュ状シートで包んだ後、約50mlのエタノール中に室温で1週間浸漬させる。その後、溶剤不溶分(メッシュ状シートの内容物)をエタノールから取り出し、重量変化が1%以下になるまで室温で送風乾燥する。このときの送風乾燥後の溶剤不溶分を秤量する(浸漬・送風乾燥後の重量W1)。その後、130℃で約2時間加熱乾燥させ、乾燥後の溶剤不溶分を秤量し(浸漬・加熱乾燥後の重量W2)、下記式(a)より膨潤度(重量%)を算出する。
膨潤度(重量%)=[(W1−W2)/W2]×100 ・・・(a)
前記ダイシングテープ3は、基材31上に粘着剤層32が形成されて構成されている。このように、ダイシングテープ3は、基材31と、粘着剤層32とが積層された構成を有していればよい。
基材(支持基材)は粘着剤層等の支持母体として用いることができる。前記基材31は放射線透過性を有していることが好ましい。前記基材31としては、例えば、紙などの紙系基材;布、不織布、フェルト、ネットなどの繊維系基材;金属箔、金属板などの金属系基材;プラスチックのフィルムやシートなどのプラスチック系基材;ゴムシートなどのゴム系基材;発泡シートなどの発泡体や、これらの積層体[特に、プラスチック系基材と他の基材との積層体や、プラスチックフィルム(又はシート)同士の積層体など]等の適宜な薄葉体を用いることができる。本発明では、基材としては、プラスチックのフィルムやシートなどのプラスチック系基材を好適に用いることができる。このようなプラスチック材における素材としては、例えば、ポリエチレン(PE)、ポリプロピレン(PP)、エチレン−プロピレン共重合体等のオレフィン系樹脂;エチレン−酢酸ビニル共重合体(EVA)、アイオノマー樹脂、エチレン−(メタ)アクリル酸共重合体、エチレン−(メタ)アクリル酸エステル(ランダム、交互)共重合体等のエチレンをモノマー成分とする共重合体;ポリエチレンテレフタレート(PET)、ポリエチレンナフタレート(PEN)、ポリブチレンテレフタレート(PBT)等のポリエステル;アクリル系樹脂;ポリ塩化ビニル(PVC);ポリウレタン;ポリカーボネート;ポリフェニレンスルフィド(PPS);ポリアミド(ナイロン)、全芳香族ポリアミド(アラミド)等のアミド系樹脂;ポリエーテルエーテルケトン(PEEK);ポリイミド;ポリエーテルイミド;ポリ塩化ビニリデン;ABS(アクリロニトリル−ブタジエン−スチレン共重合体);セルロース系樹脂;シリコーン樹脂;フッ素樹脂などが挙げられる。
前記粘着剤層32は粘着剤により形成されており、粘着性を有している。このような粘着剤としては、特に制限されず、公知の粘着剤の中から適宜選択することができる。具体的には、粘着剤としては、例えば、アクリル系粘着剤、ゴム系粘着剤、ビニルアルキルエーテル系粘着剤、シリコーン系粘着剤、ポリエステル系粘着剤、ポリアミド系粘着剤、ウレタン系粘着剤、フッ素系粘着剤、スチレン−ジエンブロック共重合体系粘着剤、これらの粘着剤に融点が約200℃以下の熱溶融性樹脂を配合したクリ−プ特性改良型粘着剤などの公知の粘着剤(例えば、特開昭56−61468号公報、特開昭61−174857号公報、特開昭63−17981号公報、特開昭56−13040号公報等参照)の中から、前記特性を有する粘着剤を適宜選択して用いることができる。また、粘着剤としては、放射線硬化型粘着剤(又はエネルギー線硬化型粘着剤)や、熱膨張性粘着剤を用いることもできる。粘着剤は単独で又は2種以上組み合わせて使用することができる。
なお、ダイシングテープ一体型半導体裏面用フィルム1において、半導体裏面用フィルム2の厚さと、ダイシングテープ3の粘着剤層32の厚さとの比や、半導体裏面用フィルム2の厚さと、ダイシングテープ3の厚さ(基材31及び粘着剤層32の総厚)との比をコントロールすることにより、ダイシング工程時のダイシング性、ピックアップ工程時のピックアップ性などを向上させることができ、ダイシングテープ一体型半導体裏面用フィルム1を半導体ウェハのダイシング工程〜半導体チップのフリップチップボンディング工程にかけて有効に利用することができる。
本実施の形態に係るダイシングテープ一体型半導体裏面用フィルムの製造方法について、図1に示すダイシングテープ一体型半導体裏面用フィルム1を例にして説明する。先ず、基材31は、従来公知の製膜方法により製膜することができる。当該製膜方法としては、例えばカレンダー製膜法、有機溶媒中でのキャスティング法、密閉系でのインフレーション押出法、Tダイ押出法、共押出し法、ドライラミネート法等が例示できる。
半導体ウェハとしては、公知乃至慣用の半導体ウェハであれば特に制限されず、各種素材の半導体ウェハから適宜選択して用いることができる。本発明では、半導体ウェハとしては、シリコンウェハを好適に用いることができる。
本実施の形態に係る半導体装置の製造方法について、図2A〜図2Dを参照しながら以下に説明する。図2A〜図2Dは、それぞれ前記ダイシングテープ一体型半導体裏面用フィルム1を用いた場合の半導体装置の製造方法の一工程を示す断面模式図である。
先ず、図2Aで示されるように、ダイシングテープ一体型半導体裏面用フィルム1の半導体裏面用フィルム2上に任意に設けられたセパレータを適宜に剥離し、当該半導体裏面用フィルム2上に半導体ウェハ4を貼着して、これを接着保持させ固定する(マウント工程)。このとき前記半導体裏面用フィルム2は未硬化状態(半硬化状態を含む)にある。また、ダイシングテープ一体型半導体裏面用フィルム1は、半導体ウェハ4の裏面に貼着される。半導体ウェハ4の裏面とは、回路面とは反対側の面(非回路面、非電極形成面などとも称される)を意味する。貼着方法は特に限定されないが、圧着による方法が好ましい。圧着は、通常、圧着ロール等の押圧手段により押圧しながら行われる。
次に、図2Bで示されるように、半導体ウェハ4のダイシングを行う。これにより、半導体ウェハ4を所定のサイズに切断して個片化(小片化)し、半導体チップ5を製造する。ダイシングは、例えば、半導体ウェハ4の回路面側から常法に従い行われる。また、本工程では、例えば、ダイシングテープ一体型半導体裏面用フィルム1まで切り込みを行うフルカットと呼ばれる切断方式等を採用できる。本工程で用いるダイシング装置としては特に限定されず、従来公知のものを用いることができる。また、半導体ウェハ4は、半導体裏面用フィルムを有するダイシングテープ一体型半導体裏面用フィルム1により優れた密着性で接着固定されているので、チップ欠けやチップ飛びを抑制できると共に、半導体ウェハ4の破損も抑制できる。なお、半導体裏面用フィルム2がエポキシ樹脂を含む樹脂組成物により形成されていると、ダイシングにより切断されても、その切断面において半導体裏面用フィルムの接着剤層の糊はみ出しが生じるのを抑制又は防止することができる。その結果、切断面同士が再付着(ブロッキング)することを抑制又は防止することができ、後述のピックアップを一層良好に行うことができる。
ダイシングテープ一体型半導体裏面用フィルム1に接着固定された半導体チップ5を回収する為に、図2Cで示されるように、半導体チップ5のピックアップを行って、半導体チップ5を半導体裏面用フィルム2とともにダイシングテープ3より剥離させる。ピックアップの方法としては特に限定されず、従来公知の種々の方法を採用できる。例えば、個々の半導体チップ5をダイシングテープ一体型半導体裏面用フィルム1の基材31側からニードルによって突き上げ、突き上げられた半導体チップ5をピックアップ装置によってピックアップする方法等が挙げられる。なお、ピックアップされた半導体チップ5は、その裏面が半導体裏面用フィルム2により保護されている。
ピックアップした半導体チップ5は、図2Dで示されるように、基板等の被着体に、フリップチップボンディング方式(フリップチップ実装方式)により固定させる。具体的には、半導体チップ5を、半導体チップ5の回路面(表面、回路パターン形成面、電極形成面などとも称される)が被着体6と対向する形態で、被着体6に常法に従い固定させる。例えば、半導体チップ5の回路面側に形成されているバンプ51を、被着体6の接続パッドに被着された接合用の導電材(半田など)61に接触させて押圧しながら導電材を溶融させることにより、半導体チップ5と被着体6との電気的導通を確保し、半導体チップ5を被着体6に固定させることができる(フリップチップボンディング工程)。このとき、半導体チップ5と被着体6との間には空隙が形成されており、その空隙間距離は、一般的に30μm〜300μm程度である。尚、半導体チップ5を被着体6上にフリップチップボンディング(フリップチップ接続)した後は、半導体チップ5と被着体6との対向面や間隙を洗浄し、該間隙に封止材(封止樹脂など)を充填させて封止することが重要である。
アクリル酸エチル−メチルメタクリレートを主成分とするアクリル酸エステル系ポリマー(商品名「テイサンレジンSG−P3」ナガセケムテックス株式会社製):100部に対して、エポキシ樹脂(商品名「HP−4700」DIC株式会社製):53部、フェノール樹脂(商品名「MEH−7851H」明和化成株式会社製):69部、球状シリカ(商品名「SE−2050−MCV」株式会社アドマテックス製):153部、着色剤(商品名「ORIPAS B−35」オリエント化学工業社製):7部、をメチルエチルケトンに溶解して、固形分濃度が22重量%となる接着剤組成物の溶液を調製した。
アクリル酸エチル−メチルメタクリレートを主成分とするアクリル酸エステル系ポリマー(商品名「テイサンレジンSG−P3」ナガセケムテックス株式会社製):100部に対して、エポキシ樹脂(商品名「HP−4700」DIC株式会社製):9部、フェノール樹脂(商品名「MEH−7851H」明和化成株式会社製):12部、球状シリカ(商品名「SE−2050−MCV」株式会社アドマテックス製):69部、着色剤(商品名「ORIPAS B−35」オリエント化学工業社製):7部、をメチルエチルケトンに溶解して、固形分濃度が22重量%となる接着剤組成物の溶液を調製した。
アクリル酸エチル−メチルメタクリレートを主成分とするアクリル酸エステル系ポリマー(商品名「テイサンレジンSG−P3」ナガセケムテックス株式会社製):100部に対して、球状シリカ(商品名「SE−2050−MCV」株式会社アドマテックス製):153部、着色剤(商品名「ORIPAS B−35」オリエント化学工業社製):7部、をメチルエチルケトンに溶解して、固形分濃度が22重量%となる接着剤組成物の溶液を調製した。
アクリル酸エチル−メチルメタクリレートを主成分とするアクリル酸エステル系ポリマー(商品名「テイサンレジンSG−P3」ナガセケムテックス株式会社製):100部に対して、着色剤(商品名「ORIPAS B−35」オリエント化学工業社製):7部、をメチルエチルケトンに溶解して、固形分濃度が22重量%となる接着剤組成物の溶液を調製した。
アクリル酸エチル−メチルメタクリレートを主成分とするアクリル酸エステル系ポリマー(商品名「テイサンレジンSG−P3」ナガセケムテックス株式会社製):100部に対して、エポキシ樹脂(商品名「HP−4700」DIC株式会社製):109部、フェノール樹脂(商品名「MEH−7851H」明和化成株式会社製):141部、球状シリカ(商品名「SE−2050−MCV」株式会社アドマテックス製):120部、着色剤(商品名「ORIPAS B−35」オリエント化学工業社製):7部、をメチルエチルケトンに溶解して、固形分濃度が22重量%となる接着剤組成物の溶液を調製した。
実施例1〜3及び比較例1及び2で作製した半導体裏面用フィルムについて、以下の評価を行った。結果を表1に示す。
半導体ウェハとしてのシリコンウェハを熱板の上に置き、所定の温度(50℃)下で、粘着テープ(商品名「BT315」日東電工株式会社製)により裏面補強した長さ150mm、幅10mmの半導体裏面用フィルムを2kgのローラーを一往復して貼り合わせた。その後、熱板上(50℃)に2分間静置した後、常温(23℃程度)で20分静置し、放置後、剥離試験機(商品名「オートグラフAGS−J」島津製作所社製)を用いて、温度70℃の条件下で、剥離角度:180°、引張速度:300mm/minの条件で、裏面補強された半導体裏面用フィルムを引き剥がして(半導体裏面用フィルムと半導体ウェハとの界面で剥離させて)、この引き剥がした時の荷重の最大荷重(測定初期のピークトップを除いた荷重の最大値)を測定し、この最大荷重を半導体裏面用フィルムの半導体ウェハに対する接着力(N/10mm幅)として求めた。
ロールラミネーター(装置名「MRK−600」株式会社エム・シー・ケー製)を用いて、70℃、0.2MPaで作製した半導体裏面用フィルムを積層することによって、厚さ100μmの測定用半導体裏面用フィルムを得た。測定用半導体裏面用フィルムを幅10mm×長さ30mmに切断して試験片とした後、引張試験機として「オートグラフASG−50D型」(島津製作所製)を用い、引張速度50mm/min、チャック間距離10mm、25℃で引張試験を行った。試験前のチャック間距離に対する試験片が破断した時のチャック間距離の比を求めて破断伸度(%)とした。
半導体裏面用フィルムから約0.1gをサンプリングして精秤し(試料の重量)、該サンプルをメッシュ状シートで包んだ後、約50mlのエタノール中に室温で1週間浸漬させた。その後、溶剤不溶分(メッシュ状シートの内容物)をエタノールから取り出し、重量変化が1%以下になるまで室温で送風乾燥した。このときの送風乾燥後の溶剤不溶分を秤量した(浸漬・送風乾燥後の重量W1)。その後、130℃で約2時間加熱乾燥させ、乾燥後の溶剤不溶分を秤量し(浸漬・加熱乾燥後の重量W2)、下記式(a)より膨潤度(重量%)を算出した。
膨潤度(重量%)=[(W1−W2)/W2]×100 ・・・(a)
半導体ウェハ(直径8インチ、厚さ0.6mm;シリコンミラーウェハ)を裏面研磨処理し、厚さ0.2mmのミラーウェハをワークとして用いた。半導体裏面用フィルム上にミラーウェハ(ワーク)を70℃でロール圧着して貼り合わせた。室温まで放熱後、半導体裏面用フィルムをその端部から粘着テープBT―315(日東電工株式会社製)により剥離し、そのまま破断やウェハ上に残渣なく剥離できたか、又は残渣が発生してもエタノールで清浄に除去できた場合を「○」、半導体裏面用フィルムの破断やウェハ上の残渣が発生した場合を「×」として評価した。
2 半導体裏面用フィルム
3 ダイシングテープ
31 基材
32 粘着剤層
33 半導体ウェハの貼着部分に対応する部分
4 半導体ウェハ
5 半導体チップ
51 半導体チップ5の回路面側に形成されているバンプ
6 被着体
61 被着体6の接続パッドに被着された接合用の導電材
Claims (6)
- 熱硬化前のウェハに対する70℃での接着力が7N/10mm以下であり、
25℃での破断伸度が700%以下である半導体裏面用フィルム。 - エタノールによる膨潤度が1重量%以上である請求項1の記載の半導体裏面用フィルム。
- アクリル樹脂を含む請求項1又は2に記載の半導体裏面用フィルム。
- 前記アクリル樹脂100重量部に対し無機充填剤を50〜200重量部含む請求項3に記載の半導体裏面用フィルム。
- 基材及び粘着剤層がこの順で積層されたダイシングテープと、このダイシングテープの粘着剤層上に積層された請求項1〜4のいずれか1項に記載の半導体裏面用フィルムとを有するダイシングテープ一体型半導体裏面用フィルム
- 請求項5に記載のダイシングテープ一体型半導体裏面用フィルムを用いた半導体装置の製造方法であって、
前記ダイシングテープ一体型半導体裏面用フィルムにおける半導体裏面用フィルム上に半導体ウェハを貼着する工程と、
切り込み深さを前記粘着剤層における前記半導体裏面用フィルム側の面を超え、かつ前記基材側の面に至らない範囲に設定して前記半導体ウェハをダイシングして半導体チップを形成する工程と、
前記半導体チップを前記半導体裏面用フィルムとともに、ダイシングテープの粘着剤層から剥離する工程と、
前記半導体チップを前記被着体上にフリップチップ接続する工程とを具備する半導体装置の製造方法。
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JP2020161571A (ja) * | 2019-03-25 | 2020-10-01 | 日東電工株式会社 | ダイシングテープ一体型半導体背面密着フィルム |
JP7160739B2 (ja) | 2019-03-25 | 2022-10-25 | 日東電工株式会社 | ダイシングテープ一体型半導体背面密着フィルム |
KR20210062563A (ko) | 2019-11-21 | 2021-05-31 | 린텍 가부시키가이샤 | 키트 및 그 키트를 사용하는 제3 적층체의 제조 방법 |
KR20210062567A (ko) | 2019-11-21 | 2021-05-31 | 린텍 가부시키가이샤 | 키트 및 그 키트를 사용하는 제3 적층체의 제조 방법 |
JP2021093470A (ja) * | 2019-12-11 | 2021-06-17 | 日東電工株式会社 | 半導体背面密着フィルム |
JP7333257B2 (ja) | 2019-12-11 | 2023-08-24 | 日東電工株式会社 | 半導体背面密着フィルム |
KR20220082726A (ko) | 2020-12-10 | 2022-06-17 | 린텍 가부시키가이샤 | 보호막이 형성된 워크의 제조 방법 및 보호막 형성 필름이 형성된 워크의 제조 방법 |
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US9768050B2 (en) | 2017-09-19 |
US20160351432A1 (en) | 2016-12-01 |
TWI783911B (zh) | 2022-11-21 |
CN106206375A (zh) | 2016-12-07 |
JP6530242B2 (ja) | 2019-06-12 |
TW201704409A (zh) | 2017-02-01 |
KR20160141664A (ko) | 2016-12-09 |
CN106206375B (zh) | 2021-07-02 |
KR102479621B1 (ko) | 2022-12-20 |
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