CN106206375A - 半导体背面用薄膜及其用途 - Google Patents
半导体背面用薄膜及其用途 Download PDFInfo
- Publication number
- CN106206375A CN106206375A CN201610382308.6A CN201610382308A CN106206375A CN 106206375 A CN106206375 A CN 106206375A CN 201610382308 A CN201610382308 A CN 201610382308A CN 106206375 A CN106206375 A CN 106206375A
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- Prior art keywords
- thin film
- back surface
- semiconductor back
- semiconductor
- surface thin
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Classifications
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J4/00—Adhesives based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; adhesives, based on monomers of macromolecular compounds of groups C09J183/00 - C09J183/16
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49572—Lead-frames or other flat leads consisting of thin flexible metallic tape with or without a film carrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/50—Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H01—ELECTRIC ELEMENTS
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L24/80 - H01L24/90
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- H01—ELECTRIC ELEMENTS
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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- H01L21/561—Batch processing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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Abstract
本发明提供具有再加工性的半导体背面用薄膜及其用途。一种半导体背面用薄膜,其在热固化前在70℃下对于晶圆的粘接力为7N/10mm以下,25℃下的断裂伸长率为700%以下。半导体背面用薄膜的基于乙醇的溶胀度优选为1重量%以上。半导体背面用薄膜优选包含丙烯酸类树脂。
Description
技术领域
本发明涉及半导体背面用薄膜及其用途。
背景技术
近年来,更进一步要求半导体装置及其封装体的薄型化、小型化。因此,作为半导体装置及其封装体,半导体芯片等半导体元件通过倒装芯片连接而安装(倒装芯片连接)在基板上的倒装芯片型半导体装置得以广泛利用。该倒装芯片连接以半导体芯片的电路面与基板的电极形成面相对的形态进行固定。这种半导体装置等有时通过保护薄膜保护半导体芯片的背面,防止半导体芯片的损伤等(参照专利文献1~3)。
现有技术文献
专利文献
专利文献1:日本特开2008-166451号公报
专利文献2:日本特开2008-006386号公报
专利文献3:日本特开2007-261035号公报
发明内容
发明要解决的问题
制造半导体装置时,半导体背面用薄膜代表而言如下使用。首先,将半导体背面用薄膜粘贴于半导体晶圆的背面(大多是未形成电路的一面)。接着,将该半导体晶圆与半导体背面用薄膜一并切割而形成半导体元件。接着,拾取带半导体背面用薄膜的半导体元件后,使半导体元件倒装芯片连接在基板等被粘物上,根据需要使半导体背面用薄膜发生热固化。由此,能够得到倒装芯片型的半导体装置。
此处,半导体背面用薄膜粘贴于半导体晶圆时,有时裹入气泡或者粘贴位置发生偏移。在这种状态下无法直接供于后续工序,因此,需要将半导体背面用薄膜从半导体晶圆剥离并再次将(其它)半导体背面用薄膜粘贴于半导体晶圆的步骤(再加工)。
像这样,对半导体背面用薄膜要求能够从半导体晶圆剥离并再利用于半导体晶圆的再加工性,但半导体背面用薄膜通常从持续保护半导体芯片背面的观点出发粘接力变高,尚未考虑到再加工性。
本发明是鉴于前述问题而进行的,其目的在于,提供具有再加工性的半导体背面用薄膜及其用途。
用于解决问题的方案
本发明人等为了解决现有的问题而进行了研究,结果发现:通过采用下述技术方案,能够提供具有良好再加工性的半导体背面用薄膜,从而完成了本发明。
即,本发明涉及半导体背面用薄膜,其在热固化前在70℃下对于晶圆的粘接力为7N/10mm以下,
25℃下的断裂伸长率为700%以下。
该半导体背面用薄膜在热固化前在70℃下对于晶圆的粘接力低至7N/10mm以下,从而容易从半导体晶圆剥离。另外,由于25℃下的断裂伸长率为700%以下,从而防止从半导体晶圆剥离时不慎的拉伸、断裂。像这样,该半导体背面用薄膜具有粘接力低且不易拉伸的特性,因此能够发挥良好的再加工性。
该半导体背面用薄膜的基于乙醇的溶胀度优选为1重量%以上。该半导体背面用薄膜可利用乙醇而溶胀至上述范围时,对于半导体晶圆的粘接力进一步降低,能够提高易剥离性。
该半导体背面用薄膜优选包含丙烯酸类树脂。另外,该半导体背面用薄膜相对于前述丙烯酸类树脂100重量份优选包含50~200重量份的无机填充剂。由此,可适合地控制上述粘接力和断裂伸长率。
本发明还涉及切割带一体型半导体背面用薄膜,其具备:依次层叠有基材和粘合剂层的切割带、以及在该切割带的粘合剂层上层叠的该半导体背面用薄膜。
本发明还涉及半导体装置的制造方法,其是使用该切割带一体型半导体背面用薄膜制造半导体装置的方法,该方法包括如下工序:
在前述切割带一体型半导体背面用薄膜的半导体背面用薄膜上粘贴半导体晶圆的工序;
将切入深度设定为超过前述粘合剂层的前述半导体背面用薄膜侧的表面且未到达前述基材侧的表面的范围而对前述半导体晶圆进行切割,从而形成半导体芯片的工序;
将前述半导体芯片与前述半导体背面用薄膜一起从切割带的粘合剂层剥离的工序;以及
将前述半导体芯片倒装芯片连接到被粘物上的工序。
附图说明
图1为示出本发明的一个实施方式的切割带一体型半导体背面用薄膜的一个例子的截面示意图。
图2为:图2的A是示出使用本发明的一个实施方式的切割带一体型半导体背面用薄膜制造半导体装置的方法的一个工序的截面示意图;图2的B是示出使用本发明的一个实施方式的切割带一体型半导体背面用薄膜制造半导体装置的方法的一个工序的截面示意图;图2的C是示出使用本发明的一个实施方式的切割带一体型半导体背面用薄膜制造半导体装置的方法的一个工序的截面示意图;图2的D是示出使用本发明的一个实施方式的切割带一体型半导体背面用薄膜制造半导体装置的方法的一个工序的截面示意图。
附图标记说明
1 切割带一体型半导体背面用薄膜
2 半导体背面用薄膜
3 切割带
31 基材
32 粘合剂层
33 对应于半导体晶圆的粘贴部分的部分
4 半导体晶圆
5 半导体芯片
51 形成于半导体芯片5的电路面侧的凸块
6 被粘物
61 粘附在被粘物6的连接焊盘上的接合用的导电材料
具体实施方式
参照附图对本发明的一个实施方式进行说明,但本发明不限定于这些例子。另外,本说明书中,图中省略无需说明的部分,另外,为了容易说明,存在放大或缩小等来图示的部分。
以下主要针对半导体背面用薄膜层叠于切割带的形态进行说明。图1是示出本实施方式的切割带一体型半导体背面用薄膜的一个例子的截面示意图。其中,在单独的半导体背面用薄膜的形态下也可适合地利用。
(切割带一体型半导体背面用薄膜)
如图1所示,切割带一体型半导体背面用薄膜1为具备在基材31上设置有粘合剂层32的切割带3和设置在前述粘合剂层上且适合于倒装芯片型半导体的半导体背面用薄膜2的构成。另外,本发明的切割带一体型半导体背面用薄膜如图1所示,可以是在切割带3的粘合剂层32上仅在对应于半导体晶圆的粘贴部分的部分33形成有半导体背面用薄膜2的构成,也可以是在粘合剂层32的整面形成有半导体背面用薄膜的构成,另外,还可以是在大于对应于半导体晶圆的粘贴部分的部分33且小于粘合剂层32的整面的部分形成有半导体背面用薄膜的构成。另外,半导体背面用薄膜2的表面(会粘贴到晶圆背面的一侧的表面)可以在直至粘贴于晶圆背面为止的期间被隔离体等保护。
(半导体背面用薄膜)
半导体背面用薄膜2(参照图1)具有薄膜状的形态。为了保护半导体芯片等半导体元件的背面和提高强度等而适合使用半导体背面用薄膜2。半导体背面用薄膜2通常在其单独存在的形态下、在切割带一体型半导体背面用薄膜的形态下是未固化状态(包括半固化状态),将半导体背面用薄膜粘贴于半导体晶圆后使其热固化。
半导体背面用薄膜对于半导体晶圆的粘接力(70℃、剥离角度为180度、剥离速度为300mm/分钟)优选为7N/10mm以下、更优选为0.5N/10mm~6.5N/10mm的范围、进一步优选为1.0N/10mm~6.0N/10mm的范围。通过使粘接力为上述范围,能够保持其对于半导体晶圆的粘接性,并且提高再加工性。
半导体背面用薄膜的25℃下的断裂伸长率优选为700%以下、更优选为50%以上且600%以下、进一步优选为100%以上且500%以下。通过使断裂伸长率为上述范围,能够防止从半导体晶圆剥离半导体背面用薄膜时不慎的拉伸、断裂,进一步提高再加工性。
半导体背面用薄膜的基于乙醇的溶胀度优选为1重量%以上、更优选为1.5重量%以上、进一步优选为2.0重量%以上。另外,溶胀度优选为100重量%以下、更优选为50重量%以下。由此,从半导体晶圆剥离半导体背面用薄膜时能够利用乙醇使半导体背面用薄膜发生溶胀,因此能够进一步提高再加工性。
<溶胀度的测定方法>
从半导体背面用薄膜取样约0.1g并精密称量(试样的重量),将该样品用网状片包裹后,在室温下在约50ml乙醇中浸渍1星期。其后,将溶剂不溶成分(网状片的内容物)从乙醇中取出,在室温下风干至重量变化达到1%以下为止。称量此时的风干后的溶剂不溶成分(浸渍/风干后的重量W1)。其后,以130℃加热干燥约2小时,称量干燥后的溶剂不溶成分(浸渍/加热干燥后的重量W2),由下述式(a)算出溶胀度(重量%)。
溶胀度(重量%)=[(W1-W2)/W2]×100···(a)
另外,半导体背面用薄膜的溶胀度可根据树脂成分的种类和/或其含量、交联剂的种类和/或其含量、以及加热温度和/或加热时间等来控制。
半导体背面用薄膜2优选至少由热固性树脂形成,进而,更优选至少由热固性树脂和热塑性树脂形成。另外,构成半导体背面用薄膜2的树脂中可以包含热固化促进催化剂。通过至少由热固性树脂形成,粘接剂层能够有效地发挥粘接功能。
作为前述热塑性树脂,例如可列举出:天然橡胶、丁基橡胶、异戊二烯橡胶、氯丁橡胶、乙烯-醋酸乙烯酯共聚物、乙烯-丙烯酸共聚物、乙烯-丙烯酸酯共聚物、聚丁二烯树脂、聚碳酸酯树脂、热塑性聚酰亚胺树脂、6-尼龙、6,6-尼龙等聚酰胺树脂、苯氧基树脂、丙烯酸类树脂、PET(聚对苯二甲酸乙二醇酯)、PBT(聚对苯二甲酸丁二醇酯)等饱和聚酯树脂、聚酰胺酰亚胺树脂、或氟树脂等。热塑性树脂可以单独使用或组合使用2种以上。这些热塑性树脂之中,特别优选离子性杂质少且耐热性高、能够确保半导体元件的可靠性的丙烯酸类树脂。
作为前述丙烯酸类树脂,并没有特别限定,可列举出以具有碳数30以下(优选为碳数4~18,进一步优选为碳数6~10,特别优选为碳数8或9)的直链或支链的烷基的丙烯酸或甲基丙烯酸的酯的1种或2种以上作为成分的聚合物等。即,本发明中,丙烯酸类树脂表示还包括甲基丙烯酸类树脂的广义含义。作为前述烷基,例如可列举出:甲基、乙基、正丙基、异丙基、正丁基、叔丁基、异丁基、正戊基、异戊基、己基、庚基、2-乙基己基、正辛基、异辛基、正壬基、异壬基、正癸基、异癸基、十一烷基、十二烷基(月桂基)、十三烷基、十四烷基、硬脂基、十八烷基等。
此外,作为用于形成前述丙烯酸类树脂的其他单体(除烷基的碳数为30以下的丙烯酸或甲基丙烯酸的烷基酯以外的单体),并没有特别限定,例如可列举出:丙烯酸、甲基丙烯酸、丙烯酸羧基乙酯、丙烯酸羧基戊酯、衣康酸、马来酸、富马酸或巴豆酸等那样的含羧基单体,马来酸酐或衣康酸酐等那样的酸酐单体,(甲基)丙烯酸-2-羟乙酯、(甲基)丙烯酸-2-羟丙酯、(甲基)丙烯酸-4-羟丁酯、(甲基)丙烯酸-6-羟己酯、(甲基)丙烯酸-8-羟辛酯、(甲基)丙烯酸-10-羟癸酯、(甲基)丙烯酸12-羟基月桂酯或丙烯酸(4-羟基甲基环己基)甲酯等那样的含羟基单体,苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯酰胺-2-甲基丙磺酸、(甲基)丙烯酰胺丙磺酸、(甲基)丙烯酸磺基丙酯或(甲基)丙烯酰氧基萘磺酸等那样的含磺酸基单体,或者2-羟乙基丙烯酰基磷酸酯等那样的含磷酸基单体等。需要说明的是,(甲基)丙烯酸是指丙烯酸和/或甲基丙烯酸,本发明的(甲基)全部同义。
另外,作为前述热固性树脂,除了环氧树脂、酚醛树脂之外,还可列举出:氨基树脂、不饱和聚酯树脂、聚氨酯树脂、有机硅树脂、热固性聚酰亚胺树脂等。热固性树脂可以单独使用或组合使用2种以上。作为热固性树脂,含会腐蚀半导体元件的离子性杂质等少的环氧树脂尤为适宜。此外,作为环氧树脂的固化剂,可以适宜地使用酚醛树脂。
作为环氧树脂,没有特别限定,例如可以使用:双酚A型环氧树脂、双酚F型环氧树脂、双酚S型环氧树脂、溴化双酚A型环氧树脂、氢化双酚A型环氧树脂、双酚AF型环氧树脂、联苯型环氧树脂、萘型环氧树脂、芴型环氧树脂、苯酚酚醛清漆型环氧树脂、邻甲酚酚醛清漆型环氧树脂、三羟基苯基甲烷型环氧树脂、四酚基乙烷型环氧树脂等二官能环氧树脂、多官能环氧树脂,或乙内酰脲型环氧树脂、异氰脲酸三缩水甘油酯型环氧树脂或缩水甘油胺型环氧树脂等环氧树脂。
作为环氧树脂,在前述例示中,特别优选酚醛清漆型环氧树脂、联苯型环氧树脂、三羟基苯基甲烷型环氧树脂、四酚基乙烷型环氧树脂。其理由是,这些环氧树脂富有与作为固化剂的酚醛树脂的反应性,耐热性等优异。
进而,前述酚醛树脂作为前述环氧树脂的固化剂起作用,例如可列举出:苯酚酚醛清漆树脂、苯酚芳烷基树脂、甲酚酚醛清漆树脂、叔丁基苯酚酚醛清漆树脂、壬基苯酚酚醛清漆树脂等酚醛清漆型酚醛树脂,甲阶型酚醛树脂,聚对氧苯乙烯等聚氧苯乙烯等。酚醛树脂可以单独使用或组合使用2种以上。这些酚醛树脂当中,特别优选苯酚酚醛清漆树脂、苯酚芳烷基树脂。其理由是,能够提高半导体装置的连接可靠性。
对于环氧树脂与酚醛树脂的配混比例,例如,优选以酚醛树脂中的羟基相对于前述环氧树脂成分中的每1当量环氧基为0.5当量~2.0当量的方式配混。更适宜为0.8当量~1.2当量。即,其理由是,两者的配混比例偏离前述范围时,无法进行充分的固化反应,环氧树脂固化物的特性变得容易劣化。
作为前述热固性树脂的含量,相对于粘接剂层中的全部树脂成分,优选为5重量%以上且90重量%以下、更优选为10重量%以上且85重量%以下、进一步优选为15重量%以上且80重量%以下。通过使前述含量为5重量%以上,能够容易地使热固化收缩量为2体积%以上。另外,使封装树脂发生热固化时,能够使粘接剂层充分地热固化而可靠地粘接固定于半导体元件的背面,能够制造未剥离的倒装芯片型半导体装置。另一方面,通过使前述含量为90重量%以下,能够抑制封装体(PKG:倒装芯片型的半导体装置)的翘曲。
作为环氧树脂与酚醛树脂的热固化促进催化剂,没有特别限定,可以从公知的热固化促进催化剂中适当选择并使用。热固化促进催化剂可以单独使用或组合2种以上使用。作为热固化促进催化剂,例如可以使用:胺类固化促进剂、磷类固化促进剂、咪唑类固化促进剂、硼类固化促进剂、磷-硼类固化促进剂等。
作为前述半导体背面用薄膜,优选由含有环氧树脂和酚醛树脂的树脂组合物、含有环氧树脂、酚醛树脂和丙烯酸类树脂的树脂组合物形成。这些树脂由于离子性杂质少且耐热性高,因此能够确保半导体元件的可靠性。
半导体背面用薄膜2重要的是对半导体晶圆的背面(未形成电路的面)具有粘接性(密合性)。半导体背面用薄膜2例如可以由含有作为热固性树脂的环氧树脂的树脂组合物形成。为了预先使半导体背面用薄膜2进行一定程度的交联,优选在制作时预先添加与聚合物的分子链末端的官能团等反应的多官能性化合物作为交联剂。由此,能够提高高温下的粘接特性,能够实现耐热性的改善。
作为前述交联剂,没有特别限制,可以使用公知的交联剂。具体而言,例如除了异氰酸酯类交联剂、环氧类交联剂、三聚氰胺类交联剂、过氧化物类交联剂之外,还可列举出:尿素类交联剂、金属醇盐类交联剂、金属螯合物类交联剂、金属盐类交联剂、碳二亚胺类交联剂、噁唑啉类交联剂、氮丙啶类交联剂、胺类交联剂等。作为交联剂,适宜为异氰酸酯类交联剂、环氧类交联剂。此外,前述交联剂可以单独使用或组合使用2种以上。
作为前述异氰酸酯类交联剂,例如可列举出:1,2-亚乙基二异氰酸酯、1,4-亚丁基二异氰酸酯、1,6-六亚甲基二异氰酸酯等低级脂肪族多异氰酸酯类;亚环戊基二异氰酸酯、亚环己基二异氰酸酯、异佛尔酮二异氰酸酯、氢化甲苯二异氰酸酯、氢化二甲苯二异氰酸酯等脂环族多异氰酸酯类;2,4-甲苯二异氰酸酯、2,6-甲苯二异氰酸酯、4,4’-二苯基甲烷二异氰酸酯、苯二亚甲基二异氰酸酯等芳香族多异氰酸酯类等,此外还可使用:三羟甲基丙烷/甲苯二异氰酸酯三聚体加成物[日本聚氨酯工业株式会社制造、商品名“CORONATE L”]、三羟甲基丙烷/六亚甲基二异氰酸酯三聚体加成物[日本聚氨酯工业株式会社制造、商品名“CORONATE HL”]等。此外,作为前述环氧类交联剂,例如可列举出:N,N,N’,N’-四缩水甘油基间苯二甲胺、二缩水甘油基苯胺、1,3-双(N,N-缩水甘油基氨基甲基)环己烷、1,6-己二醇二缩水甘油醚、新戊二醇二缩水甘油醚、乙二醇二缩水甘油醚、丙二醇二缩水甘油醚、聚乙二醇二缩水甘油醚、聚丙二醇二缩水甘油醚、山梨醇多缩水甘油醚、甘油多缩水甘油醚、季戊四醇多缩水甘油醚、聚甘油多缩水甘油醚、山梨醇酐多缩水甘油醚、三羟甲基丙烷多缩水甘油醚、己二酸二缩水甘油酯、邻苯二甲酸二缩水甘油酯、三缩水甘油基-三(2-羟乙基)异氰脲酸酯、间苯二酚二缩水甘油醚、双酚-S-二缩水甘油醚,此外还可列举出分子内具有2个以上环氧基的环氧类树脂等。
另外,对交联剂的用量没有特别限制,可以根据进行交联的程度而适当选择。具体而言,作为交联剂的用量,例如相对于聚合物成分(尤其是具有分子链末端的官能团的聚合物)100重量份,通常优选设为7重量份以下(例如0.05重量份~7重量份)。相对于聚合物成分100重量份,交联剂的用量多于7重量份时,粘接力降低,故不优选。另外,从提高内聚力的角度来看,相对于聚合物成分100重量份,交联剂的用量优选为0.05重量份以上。
另外,本发明中,也可以通过照射电子束、紫外线等实施交联处理来代替使用交联剂,或者在使用交联剂的同时通过照射电子束、紫外线等实施交联处理。
前述半导体背面用薄膜优选进行了着色。由此,能够发挥优异的标记性和外观性,可以制成具有附加价值的外观的半导体装置。如此,经着色的半导体背面用薄膜具有优异的标记性,因此在半导体元件或使用该半导体元件的半导体装置的非电路面侧的面,借助半导体背面用薄膜,利用印刷方法、激光标记方法等各种标记方法实施标记,可以赋予文字信息、图形信息等各种信息。尤其,通过控制着色的颜色,可以使通过标记所赋予的信息(文字信息、图形信息等)以优异的视觉识别性被识别。此外,半导体背面用薄膜由于被着色,因此能够容易地将切割带与半导体背面用薄膜相区别,能够提高操作性等。进而,例如作为半导体装置,还可以根据产品而用颜色进行区别。在使半导体背面用薄膜有色的情况下(非无色/透明的情况下),作为通过着色所呈现的颜色,没有特别限制,例如优选黑色、蓝色、红色等深色,特别适宜的是黑色。
在本实施方式中,深色是指:基本上L*a*b*色度体系中规定的L*为60以下(0~60)[优选为50以下(0~50),进一步优选为40以下(0~40)]的深颜色。
此外,黑色是指:基本上L*a*b*色度体系中规定的L*为35以下(0~35)[优选为30以下(0~30),进一步优选为25以下(0~25)]的黑色系颜色。另外,在黑色中,L*a*b*色度体系中规定的a*、b*可以分别根据L*的值而适当选择。作为a*、b*,例如,双方均优选为-10~10,更优选为-5~5,特别优选为-3~3的范围(尤其是0或基本为0)。
另外,在本实施方式中,L*a*b*色度体系中规定的L*、a*、b*通过使用色彩色差计(商品名“CR-200”Minolta公司制造;色彩色差计)测定来求出。另外,L*a*b*色度体系是国际照明委员会(CIE)于1976年推荐的色彩空间,是指被称为CIE1976(L*a*b*)色度体系的色彩空间。此外,L*a*b*色度体系在日本工业标准的JIS Z 8729中进行了规定。
对半导体背面用薄膜进行着色时,可以根据目标颜色来使用色材(着色剂)。作为这种色材,可以适宜地使用黑色系色材、蓝色系色材、红色系色材等各种深色系色材,黑色系色材尤为适宜。作为色材,可以是颜料、染料等的任一种。色材可以单独使用或组合2种以上使用。另外,作为染料,酸性染料、反应染料、直接染料、分散染料、阳离子染料等任一形态的染料均可以使用。另外,对颜料的形态也没有特别限定,可以从公知的颜料中适当选择并使用。
尤其,作为色材使用染料时,在半导体背面用薄膜中,染料因溶解而呈现均匀或基本均匀分散的状态,因此能够容易地制造着色浓度均匀或基本均匀的半导体背面用薄膜(甚至是切割带一体型半导体背面用薄膜)。因此,作为色材使用染料时,切割带一体型半导体背面用薄膜中的半导体背面用薄膜能够使着色浓度均匀或基本均匀,能够提高标记性、外观性。
作为黑色系色材,没有特别限制,例如可以从无机的黑色系颜料、黑色系染料中适当选择。此外,作为黑色系色材,也可以是混合有青色(cyan)系色材(蓝绿色系色材)、品红(magenda)系色材(***系色材)和黄色系色材(yellow系色材)的色材混合物。黑色系色材可以单独使用或组合2种以上使用。当然,黑色系色材也可以与黑色以外颜色的色材组合使用。
具体而言,作为黑色系色材,例如可列举出:炭黑(炉法炭黑、槽法炭黑、乙炔黑、热裂炭黑、灯黑等)、石墨(graphite)、氧化铜、二氧化锰、偶氮系颜料(甲亚胺偶氮黑(azomethine azo black)等)、苯胺黑、苝黑、钛黑、花青黑、活性炭、铁素体(非磁性铁素体、磁性铁素体等)、磁铁矿、氧化铬、氧化铁、二硫化钼、铬络合物、复合氧化物系黑色色素、蒽醌系有机黑色色素等。
本发明中,作为黑色系色材,还可以利用:C.I.溶剂黑3、7、22、27、29、34、43、70,C.I.直接黑17、19、22、32、38、51、71,C.I.酸性黑1、2、24、26、31、48、52、107、109、110、119、154,C.I.分散黑1、3、10、24等黑色系染料;C.I.颜料黑1、7等黑色系颜料等。
作为这种黑色系色材,例如市售有商品名“Oil Black BY”、商品名“Oil BlackBS”、商品名“Oil Black HBB”、商品名“Oil Black 803”、商品名“Oil Black860”、商品名“Oil Black 5970”、商品名“Oil Black 5906”、商品名“Oil Black5905”(Orient ChemicalIndustries Co.,Ltd.制造)等。
作为黑色系色材以外的色材,例如可列举出青色系色材、品红系色材、黄色系色材等。作为青色系色材,例如可列举出:C.I.溶剂蓝25、36、60、70、93、95;C.I.酸性蓝6、45等青色系染料;C.I.颜料蓝1、2、3、15、15:1、15:2、15:3、15:4、15:5、15:6、16、17、17:1、18、22、25、56、60、63、65、66;C.I.还原蓝4、60;C.I.颜料绿7等青色系颜料等。
此外,在品红系色材中,作为品红系染料,例如可列举出:C.I.溶剂红1、3、8、23、24、25、27、30、49、52、58、63、81、82、83、84、100、109、111、121、122;C.I.分散红9;C.I.溶剂紫8、13、14、21、27;C.I.分散紫1;C.I.碱性红1、2、9、12、13、14、15、17、18、22、23、24、27、29、32、34、35、36、37、38、39、40;C.I.碱性紫1、3、7、10、14、15、21、25、26、27、28等。
在品红系色材中,作为品红系颜料,例如可列举出:C.I.颜料红1、2、3、4、5、6、7、8、9、10、11、12、13、14、15、16、17、18、19、21、22、23、30、31、32、37、38、39、40、41、42、48:1、48:2、48:3、48:4、49、49:1、50、51、52、52:2、53:1、54、55、56、57:1、58、60、60:1、63、63:1、63:2、64、64:1、67、68、81、83、87、88、89、90、92、101、104、105、106、108、112、114、122、123、139、144、146、147、149、150、151、163、166、168、170、171、172、175、176、177、178、179、184、185、187、190、193、202、206、207、209、219、222、224、238、245;C.I.颜料紫3、9、19、23、31、32、33、36、38、43、50;C.I.还原红1、2、10、13、15、23、29、35等。
此外,作为黄色系色材,例如可列举出:C.I.溶剂黄19、44、77、79、81、82、93、98、103、104、112、162等黄色系染料;C.I.颜料橙31、43;C.I.颜料黄1、2、3、4、5、6、7、10、11、12、13、14、15、16、17、23、24、34、35、37、42、53、55、65、73、74、75、81、83、93、94、95、97、98、100、101、104、108、109、110、113、114、116、117、120、128、129、133、138、139、147、150、151、153、154、155、156、167、172、173、180、185、195;C.I.还原黄1、3、20等黄色系颜料等。
青色系色材、品红系色材、黄色系色材等各种色材可以分别单独使用或组合2种以上使用。另外,青色系色材、品红系色材、黄色系色材等各种色材使用2种以上时,作为这些色材的混合比例(或配混比例),没有特别限制,可以根据各色材的种类、目标颜色等而适当选择。
使半导体背面用薄膜2着色时,其着色形态没有特别限定。例如,半导体背面用薄膜可以是添加有着色剂的单层薄膜状物。另外,也可以是至少层叠有至少由热固性树脂形成的树脂层与着色剂层的层叠薄膜。另外,半导体背面用薄膜2为树脂层与着色剂层的层叠薄膜时,作为层叠形态的半导体背面用薄膜2,优选具有树脂层/着色剂层/树脂层的层叠形态。此时,着色剂层的两侧的2个树脂层可以是组成相同的树脂层,也可以是组成不同的树脂层。
半导体背面用薄膜2中可以根据需要适当配混其他添加剂。作为其他添加剂,例如除了填充剂(填料)、阻燃剂、硅烷偶联剂、离子捕捉剂之外还可列举出增量剂、防老剂、抗氧化剂、表面活性剂等。
作为前述填充剂,可以是无机填充剂、有机填充剂中的任一种,适宜为无机填充剂。通过配混无机填充剂等填充剂,能够对半导体背面用薄膜赋予导电性、提高导热性、调节弹性模量等。另外,作为半导体背面用薄膜2,可以是导电性的,也可以是非导电性的。作为前述无机填充剂,例如可列举出:二氧化硅、粘土、石膏、碳酸钙、硫酸钡、氧化铝、氧化铍、碳化硅、氮化硅等陶瓷类,铝、铜、银、金、镍、铬、铅、锡、锌、钯、焊料等金属或合金类,以及由碳等形成的各种无机粉末等。填充剂可以单独使用或组合使用2种以上。作为填充剂,当中适宜为二氧化硅、特别是熔融二氧化硅。另外,无机填充剂的平均粒径优选为0.1μm~80μm的范围内。无机填料的平均粒径是指通过激光衍射型粒度分布测定装置测得的值。
对于前述填充剂(特别是无机填充剂)的配混量,在半导体背面用薄膜包含丙烯酸类树脂的情况下,相对于丙烯酸类树脂100重量份优选为50重量份~200重量份、更优选为60重量份~180重量份。
此外,作为前述阻燃剂,例如可列举出三氧化二锑、五氧化三锑、溴化环氧树脂等。阻燃剂可以单独使用或组合使用2种以上。作为前述硅烷偶联剂,例如可列举出β-(3,4-环氧环己基)乙基三甲氧基硅烷、γ-环氧丙氧基丙基三甲氧基硅烷、γ-环氧丙氧基丙基甲基二乙氧基硅烷等。硅烷偶联剂可以单独使用或组合使用2种以上。作为前述离子捕捉剂,例如可列举出水滑石类、氢氧化铋等。离子捕捉剂可以单独使用或组合使用2种以上。
半导体背面用薄膜2例如可以利用如下惯用方法形成:混合环氧树脂等热固性树脂、视需要而定的丙烯酸类树脂等热塑性树脂、以及视需要而定的溶剂、其他添加剂等制备树脂组合物,形成薄膜状的层。具体而言,例如可列举出:将前述树脂组合物涂布在适当的隔离体(剥离纸等)上并干燥,从而形成半导体背面用薄膜的方法等。另外,直接形成在切割带的粘合剂层上时,通过将前述树脂组合物涂布在切割带的粘合剂层32上的方法、将形成在隔离体上的粘接剂层转印(转移)至粘合剂层32上的方法等,能够形成半导体背面用薄膜。前述树脂组合物可以是溶液,也可以是分散液。
另外,半导体背面用薄膜2由含有环氧树脂等热固性树脂的树脂组合物形成时,半导体背面用薄膜在应用于半导体晶圆之前的阶段,热固性树脂处于未固化或部分固化的状态。该情况下,在应用于半导体晶圆之后(具体为通常在倒装芯片连接工序中使封装材料固化(cure)时),使半导体背面用薄膜中的热固性树脂完全或基本完全固化。
本发明中,半导体背面用薄膜是由包含环氧树脂等热固性树脂的树脂组合物形成的薄膜状物时,能够有效地发挥对于半导体晶圆的密合性。
另外,半导体晶圆的切割工序中使用切削水,因此,半导体背面用薄膜发生吸湿,有时达到常态以上的含水率。在这种高含水率的状态下直接进行倒装芯片连接时,有时在半导体背面用薄膜2与半导体晶圆或其加工体(半导体)的粘接界面滞留有水蒸气而发生浮起。因此,作为半导体背面用薄膜,通过制成两面设置有透湿性高的芯材料的构成,水蒸气会扩散而能够规避所述问题。从所述观点出发,可以将在芯材料的单面或双面形成有半导体背面用薄膜2、12的多层结构用作半导体背面用薄膜。作为前述芯材料,可列举出薄膜(例如聚酰亚胺薄膜、聚酯薄膜、聚对苯二甲酸乙二醇酯薄膜、聚萘二甲酸乙二醇酯薄膜、聚碳酸酯薄膜等)、用玻璃纤维、塑料制无纺纤维强化的树脂基板、硅基板或玻璃基板等。
半导体背面用薄膜2的厚度(在层叠薄膜的情况下为总厚度)没有特别限定,例如可以从2μm~200μm左右的范围内适当选择。进而,前述厚度优选为4μm~160μm左右、更优选为6μm~100μm左右、特别优选为10μm~80μm左右。
前述半导体背面用薄膜2在未固化状态下23℃下的拉伸储能模量优选为1GPa以上(例如1GPa~50GPa),更优选为2GPa以上,特别优选为3GPa以上。前述拉伸储能模量为1GPa以上时,将半导体芯片与半导体背面用薄膜2一起自切割带的粘合剂层32剥离之后,将半导体背面用薄膜2放置在支撑体上进行运输等的时候,能够有效地抑制或防止半导体背面用薄膜粘贴于支撑体。需要说明的是,前述支撑体是指例如载带中的顶带(top tape)、底带(bottom tape)等。另外,半导体背面用薄膜2由包含热固性树脂的树脂组合物形成时,如上所述,热固性树脂通常为未固化或部分固化的状态,因此,半导体背面用薄膜的23℃下的弹性模量通常成为热固性树脂在未固化状态或部分固化状态下的23℃下的弹性模量。
此处,半导体背面用薄膜2可以是单层,也可以是多层层叠得到的层叠薄膜,在层叠薄膜的情况下,前述未固化状态下的23℃下的拉伸储能模量以层叠薄膜整体计可以为1GPa以上(例如1GPa~50GPa)的范围。另外,半导体背面用薄膜的未固化状态下的前述拉伸储能模量(23℃)可以利用树脂成分(热塑性树脂、热固性树脂)的种类和/或其含量、二氧化硅填料等填充材料的种类和/或其含量等来控制。另外,在半导体背面用薄膜2为多层层叠得到的层叠薄膜的情况下(半导体背面用薄膜具有层叠形态的情况下),作为其层叠形态,例如可以例示出由晶圆粘接层和激光标记层形成的层叠形态等。另外,在这种晶圆粘接层与激光标记层之间,可以设置有其它层(中间层、遮光层、增强层、着色层、基材层、电磁波截止层、导热层、粘合层等)。另外,晶圆粘接层是对晶圆发挥优异密合性(粘接性)的层,是与晶圆的背面接触的层。而激光标记层是发挥优异的激光标记性的层,是在对半导体芯片的背面进行激光标记时所利用的层。
需要说明的是,前述拉伸储能模量是指:不层叠在切割带3上地制作未固化状态的半导体背面用薄膜2,使用Rheometrics Co.制造的动态粘弹性测定装置“Solid AnalyzerRS A2”,在拉伸模式下,以样品宽度:10mm、样品长度:22.5mm、样品厚度:0.2mm,于频率:1Hz、升温速度:10℃/分钟、氮气气氛下、规定温度(23℃)下进行测定所得的拉伸储能模量的值。
前述半导体背面用薄膜2优选至少一个表面通过隔离体(剥离衬垫)进行保护(未图示)。例如,在切割带一体型半导体背面用薄膜1的情况下,可以仅在半导体背面用薄膜的一个表面设置有隔离体,另一方面,在未与切割带进行一体化的半导体背面用薄膜的情况下,可以在半导体背面用薄膜的单面或双面设置有隔离体。隔离体具有直至供于实用为止保护半导体背面用薄膜的、作为保护材料的功能。另外,在切割带一体型半导体背面用薄膜1的情况下,隔离体还可以用作向切割带的基材上的粘合剂层32转印半导体背面用薄膜2时的支撑基材。隔离体在向半导体背面用薄膜上粘贴半导体晶圆时被剥离。作为隔离体,可以使用聚乙烯、聚丙烯、利用氟系剥离剂、长链烷基丙烯酸酯系剥离剂等剥离剂进行了表面涂布的塑料薄膜(聚对苯二甲酸乙二醇酯等)、纸等。其中,隔离体可以利用现有公知的方法形成。此外,对隔离体的厚度等也没有特别限制。
半导体背面用薄膜2未层叠于切割带3时,半导体背面用薄膜2可以在使用1张双面具有剥离层的隔离体卷成卷状的形态下用双面具有剥离层的隔离体进行保护,还可以用至少一个表面具有剥离层的隔离体进行保护。
此外,对半导体背面用薄膜2的可见光(波长:400nm~800nm)的透光率(可见光透射率)没有特别限制,例如优选为20%以下(0%~20%)的范围,更优选为10%以下(0%~10%),特别优选为5%以下(0%~5%)。半导体背面用薄膜2的可见光透射率大于20%时,存在因透光而对半导体元件产生不良影响之虞。此外,前述可见光透射率(%)可以通过半导体背面用薄膜2的树脂成分的种类、其含量,着色剂(颜料、染料等)的种类、其含量,无机填充材料的含量等进行控制。
半导体背面用薄膜2的可见光透射率(%)可以如下进行测定。即,制作单独的厚度(平均厚度)20μm的半导体背面用薄膜2。接着,对半导体背面用薄膜2以规定强度照射波长:400nm~800nm的可见光线[装置:株式会社岛津制作所制造的可见光产生装置(商品名“ABSORPTION SPECTRO PHOTOMETR”)],测定所透过的可见光线的强度。进而,可以根据可见光线透过半导体背面用薄膜2前后的强度变化求出可见光透射率的值。另外,也可以根据厚度不为20μm的半导体背面用薄膜2的可见光透射率(%;波长:400nm~800nm)的值导出厚度:20μm的半导体背面用薄膜2的可见光透射率(%;波长:400nm~800nm)。此外,本发明虽求出厚度20μm的半导体背面用薄膜2的情况下的可见光透射率(%),但并不代表本发明的半导体背面用薄膜限于厚度20μm。
此外,作为半导体背面用薄膜2,优选其吸湿率低。具体而言,前述吸湿率优选为1重量%以下,更优选为0.8重量%以下。通过使前述吸湿率为1重量%以下,能够提高激光标记性。此外,例如在回流焊工序中,还能够抑制或防止在半导体背面用薄膜2与半导体元件之间的空隙的产生等。需要说明的是,前述吸湿率是根据将半导体背面用薄膜2在温度85℃、相对湿度85%RH的气氛下放置168小时前后的重量变化所算出的值。半导体背面用薄膜2由含有热固性树脂的树脂组合物形成时,前述吸湿率是指对热固化后的半导体背面用薄膜在温度85℃、相对湿度85%RH的气氛下放置168小时之后的值。此外,前述吸湿率例如可以通过使无机填料的添加量变化来进行调整。
此外,作为半导体背面用薄膜2,优选挥发成分的比例少。具体而言,加热处理后的半导体背面用薄膜2的失重率(失重量的比率)优选为1重量%以下,更优选为0.8重量%以下。加热处理的条件例如为加热温度250℃、加热时间1小时。通过使前述失重率为1重量%以下,能够提高激光标记性。此外,例如在回流焊工序中,能够抑制或防止倒装芯片型的半导体装置产生裂纹。前述失重率例如可以通过添加能减少无铅焊料回流焊时的裂纹产生的无机物来进行调整。另外,半导体背面用薄膜2由含有热固性树脂的树脂组合物形成时,前述失重率是指对热固化后的半导体背面用薄膜在加热温度250℃、加热时间1小时的条件下进行加热后的值。
(切割带)
前述切割带3是在基材31上形成粘合剂层32而构成的。如此,切割带3具有层叠有基材31和粘合剂层32的构成即可。
(基材)
基材(支撑基材)可以用作粘合剂层等的支撑母体。前述基材31优选具有辐射线透过性。作为前述基材31,例如可以使用纸等纸类基材;布、无纺布、毡、网等纤维类基材;金属箔、金属板等金属类基材;塑料的薄膜、片等塑料类基材;橡胶片等橡胶类基材;发泡片等发泡体、它们的层叠体[特别是塑料类基材与其他基材的层叠体、塑料薄膜(或片)彼此的层叠体等]等适当的薄层体。本发明中,作为基材,可以适宜地使用塑料的薄膜、片等塑料类基材。作为这种塑料材料的原材料,例如可列举出:聚乙烯(PE)、聚丙烯(PP)、乙烯-丙烯共聚物等烯烃类树脂;乙烯-醋酸乙烯酯共聚物(EVA)、离聚物树脂、乙烯-(甲基)丙烯酸共聚物、乙烯-(甲基)丙烯酸酯(无规、交替)共聚物等以乙烯作为单体成分的共聚物;聚对苯二甲酸乙二醇酯(PET)、聚萘二甲酸乙二醇酯(PEN)、聚对苯二甲酸丁二醇酯(PBT)等聚酯;丙烯酸类树脂;聚氯乙烯(PVC);聚氨酯;聚碳酸酯;聚苯硫醚(PPS);聚酰胺(尼龙)、全芳香族聚酰胺(芳纶)等酰胺类树脂;聚醚醚酮(PEEK);聚酰亚胺;聚醚酰亚胺;聚偏二氯乙烯;ABS(丙烯腈-丁二烯-苯乙烯共聚物);纤维素类树脂;有机硅树脂;氟树脂等。
此外,作为基材31的材料,可列举出前述树脂的交联体等聚合物。前述塑料薄膜可以以无拉伸方式使用,也可以根据需要使用实施了单轴或双轴拉伸处理的薄膜。利用通过拉伸处理等而赋予了热收缩性的树脂片,能够通过在切割后使该基材31热收缩而降低粘合剂层32与半导体背面用薄膜2的粘接面积,实现半导体芯片的回收的容易化。
对于基材31的表面,为了提高与邻接的层的密合性、保持性等,可以实施惯用的表面处理,例如铬酸处理、臭氧暴露、火焰暴露、高压电击暴露、电离辐射线处理等化学或物理处理,利用底涂剂(例如后述的粘合物质)的涂布处理。
前述基材31可以适当选择使用同一种类或不同种类的材料,可以根据需要使用多种材料的共混物。此外,对于基材31,可以为了赋予抗静电能力而在前述基材31上设置由金属、合金、它们的氧化物等形成的厚度为左右的导电性物质的蒸镀层。基材31可以是单层或者2种以上的多层。
对基材31的厚度(为层叠体时是指总厚度)没有特别限制,可以根据强度、柔软性、使用目的等而适当选择,例如一般为1000μm以下(例如1μm~1000μm),优选为10μm~500μm,进一步优选为20μm~300μm,特别是30μm~200μm左右,但不限于这些。
另外,基材31中可以在不损害本发明的效果等的范围内含有各种添加剂(着色剂、填充剂、增塑剂、防老剂、抗氧化剂、表面活性剂、阻燃剂等)。
(粘合剂层)
前述粘合剂层32由粘合剂形成,具有粘合性。作为这种粘合剂,没有特别限制,可以从公知的粘合剂中适当选择。具体而言,作为粘合剂,例如可以从下述当中适当选择使用具有前述特性的粘合剂:丙烯酸类粘合剂、橡胶类粘合剂、乙烯基烷基醚类粘合剂、有机硅类粘合剂、聚酯类粘合剂、聚酰胺类粘合剂、氨基甲酸酯类粘合剂、氟类粘合剂、苯乙烯-二烯嵌段共聚物类粘合剂、在这些粘合剂中配混了熔点约200℃以下的热熔融性树脂的蠕变特性改良型粘合剂等公知的粘合剂(例如参见日本特开昭56-61468号公报、日本特开昭61-174857号公报、日本特开昭63-17981号公报、日本特开昭56-13040号公报等)。此外,作为粘合剂,也可以使用辐射线固化型粘合剂(或能量射线固化型粘合剂)、热膨胀性粘合剂。粘合剂可以单独使用或组合使用2种以上。
作为前述粘合剂,可以适宜地使用丙烯酸类粘合剂、橡胶类粘合剂,丙烯酸类粘合剂尤为适宜。作为丙烯酸类粘合剂,可列举出以使用1种或2种以上(甲基)丙烯酸烷基酯作为单体成分的丙烯酸类聚合物(均聚物或共聚物)作为基础聚合物的丙烯酸类粘合剂。
作为前述丙烯酸类粘合剂中的(甲基)丙烯酸烷基酯,例如可列举出:(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸正丙酯、(甲基)丙烯酸异丙酯、(甲基)丙烯酸正丁酯、(甲基)丙烯酸异丁酯、(甲基)丙烯酸仲丁酯、(甲基)丙烯酸叔丁酯、(甲基)丙烯酸戊酯、(甲基)丙烯酸己酯、(甲基)丙烯酸庚酯、(甲基)丙烯酸正辛酯、(甲基)丙烯酸-2-乙基己酯、(甲基)丙烯酸异辛酯、(甲基)丙烯酸正壬酯、(甲基)丙烯酸异壬酯、(甲基)丙烯酸正癸酯、(甲基)丙烯酸异癸酯、(甲基)丙烯酸十一烷基酯、(甲基)丙烯酸十二烷基酯、(甲基)丙烯酸十三烷基酯、(甲基)丙烯酸十四烷基酯、(甲基)丙烯酸十五烷基酯、(甲基)丙烯酸十六烷基酯、(甲基)丙烯酸十七烷基酯、(甲基)丙烯酸十八烷基酯、(甲基)丙烯酸十九烷基酯、(甲基)丙烯酸二十烷基酯等(甲基)丙烯酸烷基酯等。作为(甲基)丙烯酸烷基酯,适宜的是烷基的碳数为4~18的(甲基)丙烯酸烷基酯。其中,(甲基)丙烯酸烷基酯的烷基可以是直链或支链中的任一种。
另外,前述丙烯酸类聚合物可以为了改善内聚力、耐热性、交联性等而根据需要含有对应于可与前述(甲基)丙烯酸烷基酯共聚的其他单体成分(共聚性单体成分)的单元。作为这种共聚性单体成分,例如可列举出:(甲基)丙烯酸(丙烯酸、甲基丙烯酸)、丙烯酸羧基乙酯、丙烯酸羧基戊酯、衣康酸、马来酸、富马酸、巴豆酸等含羧基单体;马来酸酐、衣康酸酐等含酸酐基单体;(甲基)丙烯酸羟乙酯、(甲基)丙烯酸羟丙酯、(甲基)丙烯酸羟丁酯、(甲基)丙烯酸羟己酯、(甲基)丙烯酸羟辛酯、(甲基)丙烯酸羟癸酯、(甲基)丙烯酸羟基月桂酯、甲基丙烯酸(4-羟基甲基环己基)甲酯等含羟基单体;苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯酰胺-2-甲基丙磺酸、(甲基)丙烯酰胺丙磺酸、(甲基)丙烯酸磺基丙酯、(甲基)丙烯酰氧基萘磺酸等含磺酸基单体;2-羟乙基丙烯酰基磷酸酯等含磷酸基单体;(甲基)丙烯酰胺、N,N-二甲基(甲基)丙烯酰胺、N-丁基(甲基)丙烯酰胺、N-羟甲基(甲基)丙烯酰胺、N-羟甲基丙烷(甲基)丙烯酰胺等(N-取代)酰胺类单体;(甲基)丙烯酸氨基乙酯、(甲基)丙烯酸-N,N-二甲氨基乙酯、(甲基)丙烯酸叔丁基氨基乙酯等(甲基)丙烯酸氨基烷基酯类单体;(甲基)丙烯酸甲氧基乙酯、(甲基)丙烯酸乙氧基乙酯等(甲基)丙烯酸烷氧基烷基酯类单体;丙烯腈、甲基丙烯腈等氰基丙烯酸酯单体;(甲基)丙烯酸缩水甘油酯等含环氧基丙烯酸类单体;苯乙烯、α-甲基苯乙烯等苯乙烯类单体;醋酸乙烯酯、丙酸乙烯酯等乙烯酯类单体;异戊二烯、丁二烯、异丁烯等烯烃类单体;乙烯醚等乙烯醚类单体;N-乙烯基吡咯烷酮、甲基乙烯基吡咯烷酮、乙烯基吡啶、乙烯基哌啶酮、乙烯基嘧啶、乙烯基哌嗪、乙烯基吡嗪、乙烯基吡咯、乙烯基咪唑、乙烯基噁唑、乙烯基吗啉、N-乙烯基羧酸酰胺类、N-乙烯基己内酰胺等含氮单体;N-环己基马来酰亚胺、N-异丙基马来酰亚胺、N-月桂基马来酰亚胺、N-苯基马来酰亚胺等马来酰亚胺类单体;N-甲基衣康酰亚胺、N-乙基衣康酰亚胺、N-丁基衣康酰亚胺、N-辛基衣康酰亚胺、N-2-乙基己基衣康酰亚胺、N-环己基衣康酰亚胺、N-月桂基衣康酰亚胺等衣康酰亚胺类单体;N-(甲基)丙烯酰氧基亚甲基琥珀酰亚胺、N-(甲基)丙烯酰基-6-氧六亚甲基琥珀酰亚胺、N-(甲基)丙烯酰基-8-氧八亚甲基琥珀酰亚胺等琥珀酰亚胺类单体;聚乙二醇(甲基)丙烯酸酯、聚丙二醇(甲基)丙烯酸酯、甲氧基乙二醇(甲基)丙烯酸酯、甲氧基聚丙二醇(甲基)丙烯酸酯等二醇类丙烯酸酯单体;(甲基)丙烯酸四氢糠酯、氟(甲基)丙烯酸酯、有机硅(甲基)丙烯酸酯等具有杂环、卤素原子、硅原子等的丙烯酸酯类单体;己二醇二(甲基)丙烯酸酯、(聚)乙二醇二(甲基)丙烯酸酯、(聚)丙二醇二(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、季戊四醇二(甲基)丙烯酸酯、三羟甲基丙烷三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、环氧丙烯酸酯、聚酯丙烯酸酯、氨基甲酸酯丙烯酸酯、二乙烯苯、丁基二(甲基)丙烯酸酯(butyl di(meta)acrylate)、己基二(甲基)丙烯酸酯(hexyl di(meta)acrylate)等多官能单体等。这些共聚性单体成分可以使用1种或2种以上。
作为粘合剂使用辐射线固化型粘合剂(或能量射线固化型粘合剂)时,作为辐射线固化型粘合剂(组合物),例如可列举出:使用在聚合物侧链或主链中或主链末端具有自由基反应性碳-碳双键的聚合物作为基础聚合物的内在型的辐射线固化型粘合剂,粘合剂中配混有紫外线固化性的单体成分、低聚物成分的辐射线固化型粘合剂等。此外,作为粘合剂使用热膨胀性粘合剂时,作为热膨胀性粘合剂,例如可列举出含有粘合剂和发泡剂(特别是热膨胀性微球)的热膨胀性粘合剂等。
本发明中,粘合剂层32中可以在不损害本发明的效果的范围内含有各种添加剂(例如增粘树脂、着色剂、增粘剂、增量剂、填充剂、增塑剂、防老剂、抗氧化剂、表面活性剂、交联剂等)。
作为前述交联剂,没有特别限制,可以使用公知的交联剂。具体而言,作为交联剂,除了异氰酸酯类交联剂、环氧类交联剂、三聚氰胺类交联剂、过氧化物类交联剂之外,还可列举出:尿素类交联剂、金属醇盐类交联剂、金属螯合物类交联剂、金属盐类交联剂、碳二亚胺类交联剂、噁唑啉类交联剂、氮丙啶类交联剂、胺类交联剂等,适宜为异氰酸酯类交联剂、环氧类交联剂。交联剂可以单独使用或组合使用2种以上。另外,对交联剂的用量没有特别限制。
作为前述异氰酸酯类交联剂,例如可列举出:1,2-亚乙基二异氰酸酯、1,4-亚丁基二异氰酸酯、1,6-六亚甲基二异氰酸酯等低级脂肪族多异氰酸酯类;亚环戊基二异氰酸酯、亚环己基二异氰酸酯、异佛尔酮二异氰酸酯、氢化甲苯二异氰酸酯、氢化二甲苯二异氰酸酯等脂环族多异氰酸酯类;2,4-甲苯二异氰酸酯、2,6-甲苯二异氰酸酯、4,4’-二苯基甲烷二异氰酸酯、苯二亚甲基二异氰酸酯等芳香族多异氰酸酯类等,此外还可使用:三羟甲基丙烷/甲苯二异氰酸酯三聚体加成物[日本聚氨酯工业株式会社制造、商品名“CORONATE L”]、三羟甲基丙烷/六亚甲基二异氰酸酯三聚体加成物[日本聚氨酯工业株式会社制造、商品名“CORONATE HL”]等。此外,作为前述环氧类交联剂,例如可列举出:N,N,N’,N’-四缩水甘油基间苯二甲胺、二缩水甘油基苯胺、1,3-双(N,N-缩水甘油基氨基甲基)环己烷、1,6-己二醇二缩水甘油醚、新戊二醇二缩水甘油醚、乙二醇二缩水甘油醚、丙二醇二缩水甘油醚、聚乙二醇二缩水甘油醚、聚丙二醇二缩水甘油醚、山梨醇多缩水甘油醚、甘油多缩水甘油醚、季戊四醇多缩水甘油醚、聚甘油多缩水甘油醚、山梨醇酐多缩水甘油醚、三羟甲基丙烷多缩水甘油醚、己二酸二缩水甘油酯、邻苯二甲酸二缩水甘油酯、三(2-羟乙基)异氰脲酸三缩水甘油酯、间苯二酚二缩水甘油醚、双酚-S-二缩水甘油醚,此外还可列举出分子内具有2个以上环氧基的环氧类树脂等。
另外,本发明中,也可以通过照射电子束、紫外线等实施交联处理来代替使用交联剂,或者在使用交联剂的同时通过照射电子束、紫外线等实施交联处理。
粘合剂层32例如可以利用下述惯用的方法形成:将粘合剂(压敏粘接剂)与视需要而定的溶剂、其他添加剂等混合,形成片状的层。具体而言,例如可以通过下述方法等形成粘合剂层32:将含有粘合剂和视需要而定的溶剂、其他添加剂的混合物涂布在基材31上的方法,在合适的隔离体(剥离纸等)上涂布前述混合物形成粘合剂层32并将其转印(转移)至基材31上的方法。
粘合剂层32的厚度没有特别限定,例如为5μm以上且200μm以下,优选为5μm以上且50μm以下、进一步优选为5μm以上且45μm以下、特别优选为5μm以上且40μm以下。若粘合剂层32的厚度在前述范围内,则能够发挥适度的粘合力,充分提高基材与粘合剂层之间的密合性,另外,能够确保切割时的半导体晶圆的保持力。另外,粘合剂层32可以是单层、多层中的任一种。
前述切割带3的粘合剂层32对于半导体背面用薄膜2的粘接力(23℃、剥离角度为180度、剥离速度为300mm/分钟)优选为0.02N/20mm~10N/20mm的范围、更优选为0.05N/20mm~5N/20mm的范围。通过使前述粘接力为0.02N/20mm以上,在切割半导体晶圆时能够防止半导体元件的芯片飞散。另一方面,通过使前述粘接力为10N/20mm以下,在拾取半导体元件时,能够防止该半导体元件难以剥离或者发生残胶。
另外,本发明中,可以赋予半导体背面用薄膜2、切割带一体型半导体背面用薄膜1以抗静电能力。由此,能够防止在其粘接时和剥离时等的静电的产生、防止电路因由此导致的半导体晶圆等带电而破坏等。抗静电能力的赋予可以以下述方法等适当方式进行:向基材31、粘合剂层32和/或半导体背面用薄膜2中添加抗静电剂、导电性物质的方法,在基材31上附设由电荷移动络合物、金属膜等形成的导电层的方法等。作为这些方式,优选不容易产生有使半导体晶圆变质之虞的杂质离子的方式。作为为了赋予导电性、提高导热性等而配混的导电性物质(导电填料),可列举出:银、铝、金、铜、镍、导电性合金等的球状、针状、鳞片状的金属粉,氧化铝等金属氧化物,无定形炭黑、石墨等。不过,前述半导体背面用薄膜2从能够制成不漏电的方面来看优选为非导电性。
另外,半导体背面用薄膜2、切割带一体型半导体背面用薄膜1可以以卷成卷状的形态形成,也可以以层叠有片(薄膜)的形态形成。例如,具有卷成卷状的形态时,可以将半导体背面用薄膜2或者半导体背面用薄膜2与切割带3的层叠体根据需要在利用隔离体进行保护的状态下卷成卷状,制成卷成卷状的状态或形态的半导体背面用薄膜2、切割带一体型半导体背面用薄膜1。另外,作为卷成卷状的状态或形态的切割带一体型半导体背面用薄膜1,可以由基材31、在前述基材31的一面形成的粘合剂层32、在前述粘合剂层32上形成的半导体背面用薄膜、以及在前述基材31的另一面形成的剥离处理层(背面处理层)构成。
另外,作为切割带一体型半导体背面用薄膜1的厚度(半导体背面用薄膜的厚度与由基材31和粘合剂层32形成的切割带的厚度的总厚度),例如可以从25μm~1600μm的范围选择,优选为30μm~850μm(进一步优选为35μm~500μm、特别优选为50μm~330μm)。
另外,在切割带一体型半导体背面用薄膜1中,通过控制半导体背面用薄膜2的厚度与切割带3的粘合剂层32的厚度之比、半导体背面用薄膜2的厚度与切割带3的厚度(基材31和粘合剂层32的总厚度)之比,能够提高切割工序时的切割性、拾取工序时的拾取性等,可以从半导体晶圆的切割工序至半导体芯片的倒装芯片连接工序有效地利用切割带一体型半导体背面用薄膜1。
(切割带一体型半导体背面用薄膜的制造方法)
以图1所示的切割带一体型半导体背面用薄膜1为例对本实施方式的切割带一体型半导体背面用薄膜的制造方法进行说明。首先,基材31可以通过现有公知的成膜方法成膜。作为该成膜方法,例如可例示出:压延成膜法、在有机溶剂中的流延法、在密闭体系中的吹胀挤出法、T模挤出法、共挤出法、干层压法等。
接着,在基材31上涂布粘合剂组合物,并进行干燥(根据需要进行加热交联),形成粘合剂层32。作为涂布方式,可列举出辊涂覆、丝网涂覆、凹版涂覆等。另外,可以将粘合剂层组合物直接涂布于基材31在基材31上形成粘合剂层32,也可以在将粘合剂组合物涂布于表面进行了剥离处理的剥离纸等而形成粘合剂层32之后将该粘合剂层32转印至基材31。由此制作在基材31上形成有粘合剂层32的切割带3。
另一方面,将用于形成半导体背面用薄膜2的形成材料涂布在剥离纸上使得干燥后的厚度为规定厚度,进一步在规定条件下干燥(需要热固化时等,根据需要实施加热处理进行干燥),形成涂布层。通过将该涂布层转印至前述粘合剂层32上,在粘合剂层32上形成半导体背面用薄膜2。需要说明的是,通过在前述粘合剂层32上直接涂布用于形成半导体背面用薄膜2的形成材料之后,在规定条件下干燥(在需要热固化时等,根据需要实施加热处理进行干燥),也可以在粘合剂层32上形成半导体背面用薄膜2。由此可以得到本发明的切割带一体型半导体背面用薄膜1。另外,在形成半导体背面用薄膜2时进行热固化的情况下,重要的是以达到部分固化的状态的程度进行热固化,但优选不进行热固化。
本发明的切割带一体型半导体背面用薄膜1可以在具备倒装芯片连接工序的半导体装置的制造时适宜地使用。即,本发明的切割带一体型半导体背面用薄膜1在制造倒装芯片安装的半导体装置时使用,在于半导体芯片的背面粘贴有切割带一体型半导体背面用薄膜1的半导体背面用薄膜2的状态或形态下制造倒装芯片安装的半导体装置。因此,本发明的切割带一体型半导体背面用薄膜1可以用于倒装芯片安装的半导体装置(半导体芯片以倒装芯片连接方式固定于基板等被粘物的状态或形态的半导体装置)。
另外,与切割带一体型半导体背面用薄膜1同样地,半导体背面用薄膜2可用于倒装芯片实装的半导体装置(半导体芯片通过倒装芯片连接方式而固定于基板等被粘物的状态或形态的半导体装置)。
(半导体晶圆)
作为半导体晶圆,只要是公知惯用的半导体晶圆则没有特别限制,可以从各种原材料的半导体晶圆中适当选择并使用。本发明中,作为半导体晶圆,可以适宜地使用硅晶圆。
(半导体装置的制造方法)
以下参照图2的A~图2的D对本实施方式的半导体装置的制造方法进行说明。图2的A~图2的D是分别示出使用前述切割带一体型半导体背面用薄膜1时的半导体装置的制造方法的一个工序的截面示意图。
前述半导体装置的制造方法可以使用前述切割带一体型半导体背面用薄膜1制造半导体装置。具体而言,至少具备以下工序:在前述切割带一体型半导体背面用薄膜的半导体背面用薄膜上粘贴半导体晶圆的工序;将切入深度设定为超过前述粘合剂层的前述半导体背面用薄膜侧的表面且未到达前述基材侧的表面的范围而对前述半导体晶圆进行切割,从而形成半导体芯片的工序;将前述半导体芯片与前述半导体背面用薄膜一起从切割带的粘合剂层剥离的工序;以及,将前述半导体芯片倒装芯片连接到前述被粘物上的工序。
[安装工序]
首先,如图2的A所示,将任意设置在切割带一体型半导体背面用薄膜1的半导体背面用薄膜2上的隔离体适宜地剥离,在该半导体背面用薄膜2上粘贴半导体晶圆4,将其粘接保持进行固定(安装工序)。此时,前述半导体背面用薄膜2处于未固化状态(包括半固化状态)。此外,切割带一体型半导体背面用薄膜1粘贴在半导体晶圆4的背面。半导体晶圆4的背面是指与电路面相反一侧的面(也称为非电路面、非电极形成面等)。对粘贴方法没有特别限定,优选利用压接的方法。压接通常利用压接辊等按压单元一边按压一边进行。
[切割工序」
接着,如图2的B所示,进行半导体晶圆4的切割。由此,将半导体晶圆4切割成规定尺寸进行单片化(小片化),制造半导体芯片5。切割例如从半导体晶圆4的电路面侧按照常规方法进行。此外,本工序可以采用例如切入至切割带一体型半导体背面用薄膜1的被称为全切的切断方式等。作为本工序中使用的切割装置,没有特别限定,可以使用现有公知的装置。此外,半导体晶圆4由于通过具有半导体背面用薄膜的切割带一体型半导体背面用薄膜1以优异的密合性进行了粘接固定,因此能够抑制芯片缺损、芯片飞溅,并且还能够抑制半导体晶圆4的破损。另外,半导体背面用薄膜2由包含环氧树脂的树脂组合物形成时,即使因切割而被切断,也能够抑制或防止其切断面露出半导体背面用薄膜的粘接剂层的胶糊。其结果,能够抑制或防止切断面彼此发生再附着(粘连),能够更良好地进行后述的拾取。
另外,进行切割带一体型半导体背面用薄膜1的扩晶(expand)时,该扩晶可以使用现有公知的扩晶装置进行。扩晶装置具有:可以通过切割环将切割带一体型半导体背面用薄膜1向下方压下的甜甜圈状的外环、以及直径比外环小的支撑切割带一体型半导体背面用薄膜的内环。通过该扩晶工序,在后述的拾取工序中,能够防止相邻的半导体芯片之间接触而发生破损。
[拾取工序]
为了回收粘接固定于切割带一体型半导体背面用薄膜1的半导体芯片5,如图2的C所示,进行半导体芯片5的拾取,将半导体芯片5与半导体背面用薄膜2一起从切割带3剥离。作为拾取的方法,没有特别限定,可以采用现有公知的各种方法。例如可列举出如下方法等:通过针形件从切割带一体型半导体背面用薄膜1的基材31侧将各个半导体芯片5顶起,用拾取装置拾取被顶起的半导体芯片5。需要说明的是,被拾取的半导体芯片5的背面被半导体背面用薄膜2保护。
[倒装芯片连接工序]
所拾取的半导体芯片5如图2的D所示,通过倒装芯片连接方式(倒装芯片安装方式)固定于基板等被粘物。具体而言,按照常规方法将半导体芯片5以半导体芯片5的电路面(也称为表面、电路图案形成面、电极形成面等)与被粘物6相对的形态固定于被粘物6。例如,通过使在半导体芯片5的电路面侧形成的凸块51与粘附在被粘物6的连接焊盘上的接合用的导电材料(焊料等)61接触边按压边使导电材料熔融,能够确保半导体芯片5与被粘物6的电导通,将半导体芯片5固定于被粘物6(倒装芯片连接工序)。此时,在半导体芯片5与被粘物6之间形成有空隙,其空隙间距一般为30μm~300μm左右。需要说明的是,将半导体芯片5倒装芯片连接(flip-chip bonding)到被粘物6上之后,重要的是洗涤半导体芯片5与被粘物6的相对面、间隙,向该间隙中填充封装材料(封装树脂等)进行封装。
作为被粘物6,可以使用引线框、电路基板(布线电路基板等)等各种基板。作为这种基板的材质,并没有特别限定,可列举出陶瓷基板、塑料基板。作为塑料基板,例如可列举出环氧基板、双马来酰亚胺三嗪基板、聚酰亚胺基板等。
在倒装芯片连接工序中,作为凸块、导电材料的材质,没有特别限定,例如可列举出锡-铅系金属材料、锡-银系金属材料、锡-银-铜系金属材料、锡-锌系金属材料、锡-锌-铋系金属材料等焊料类(合金)、金系金属材料、铜系金属材料等。
另外,在倒装芯片连接工序中,使导电材料熔融来使半导体芯片5的电路面侧的凸块与被粘物6的表面的导电材料连接,作为该导电材料的熔融时的温度,通常为260℃左右(例如250℃~300℃)。本发明的切割带一体型半导体背面用薄膜通过由环氧树脂等形成半导体背面用薄膜,可以制成具有连该倒装芯片连接工序中的高温也能够耐受的耐热性的薄膜。
本工序优选进行半导体芯片5与被粘物6的相对面(电极形成面)、间隙的洗涤。作为该洗涤中使用的洗液,没有特别限制,例如可列举出有机系的洗液、水系的洗液。本发明的切割带一体型半导体背面用薄膜中的半导体背面用薄膜具有对洗液的耐溶剂性,对于这些洗液实质上不具有溶解性。因此,如前所述,作为洗液,可以使用各种洗液,不需要特别的洗液,可以通过现有的方法进行洗涤。
接着,进行用于将倒装芯片连接的半导体芯片5与被粘物6之间的间隙封装的封装工序。封装工序使用封装树脂进行。作为此时的封装条件,没有特别限定,通常通过在175℃下进行60秒~90秒的加热进行封装树脂的热固化,但本发明不限于此,例如可以在165℃~185℃下固化数分钟。在该工序的热处理中,不仅仅是封装树脂,也可以同时进行半导体背面用薄膜2的热固化。由此,封装树脂和半导体背面用薄膜2这两者随着热固化的推进而发生固化收缩。其结果,因封装树脂的固化收缩而施加于半导体芯片5的应力能够因半导体背面用薄膜2的固化收缩而抵消或缓和。另外,通过该工序,能够使半导体背面用薄膜2完全或基本完全地热固化,能够以优异的密合性粘贴于半导体元件的背面。进而,本发明的半导体背面用薄膜2即使在未固化状态下进行该封装工序时,也能够与封装材料一起热固化,因此无需重新追加用于使半导体背面用薄膜2发生热固化的工序。
作为前述封装树脂,只要是具有绝缘性的树脂(绝缘树脂)则没有特别限制,可以从公知的封装树脂等封装材料中适当选择并使用,更优选具有弹性的绝缘树脂。作为封装树脂,例如可列举出含有环氧树脂的树脂组合物等。作为环氧树脂,可列举出前述例示的环氧树脂等。此外,作为基于含有环氧树脂的树脂组合物的封装树脂,作为树脂成分,除了环氧树脂之外,可以含有环氧树脂以外的热固性树脂(酚醛树脂等)、热塑性树脂等。其中,作为酚醛树脂,还可以作为环氧树脂的固化剂进行利用,作为这种酚醛树脂,可列举出前述例示的酚醛树脂等。
使用前述切割带一体型半导体背面用薄膜1、半导体背面用薄膜2制造的半导体装置(倒装芯片实装的半导体装置)由于在半导体芯片的背面粘贴有半导体背面用薄膜,因此能够以优异的视觉识别性来施加各种标记。尤其是,即使标记方法为激光标记方法,也能够以优异的对比度来施加标记,能够良好地目视确认通过激光标记施加的各种信息(文字信息、图研信息等)。另外,进行激光标记时,可以利用公知的激光标记装置。另外,作为激光,可以利用气体激光、固体激光、液体激光等各种激光。具体而言,作为气体激光,没有特别限定,可以利用公知的气体激光,适合为二氧化碳激光(CO2激光)、准分子激光(ArF激光、KrF激光、XeCl激光、XeF激光等)。另外,作为固体激光,没有特别限定,可以利用公知的固体激光,适合为YAG激光(Nd:YAG激光等)、YVO4激光。
使用本发明的切割带一体型半导体背面用薄膜、半导体背面用薄膜所制造的半导体装置由于是以倒装芯片安装方式安装的半导体装置,因此成为比以芯片接合安装方式安装的半导体装置薄型化、小型化的形状。由此,可以适宜地用作各种电子设备/电子部件或它们的材料/构件。具体而言,作为本发明的倒装芯片安装的半导体装置所利用的电子设备,可列举出:所谓的“手机”、“PHS”、小型电脑(例如所谓的“PDA”(便携信息终端)、所谓的“笔记本电脑”、所谓的“上网本(NETBOOK,商标)”、所谓的“可穿戴式电脑”等)、“手机”与电脑一体化的小型电子设备、所谓的“数码相机(DIGITAL CAMERA,商标)”、所谓的“数码摄像机”、小型电视机、小型游戏机、小型数字音频播放器、所谓的“电子记事本”、所谓的“电子辞典”、所谓的“电子书”用电子设备终端、小型数码型钟表等便携型电子设备(可携带的电子设备)等,当然也可以是便携型以外(设置型等)的电子设备(例如所谓的“台式电脑”、薄型电视机、录像/播放用电子设备(硬盘录像机、DVD播放器等)、投影仪、微型机械等)等。此外,作为电子部件或电子设备/电子部件的材料/构件,例如可列举出所谓的“CPU”的构件、各种存储装置(所谓的“内存”、硬盘等)的构件等。
实施例
以下,使用实施例来详细说明本发明,但本发明在不超过其主旨的范围内,不限定于以下的实施例。另外,各例中,份在没有特别记载的情况下均为重量基准。
(实施例1)
相对于以丙烯酸乙酯-甲基丙烯酸甲酯作为主要成分的丙烯酸酯系聚合物(商品名“Teisanresin SG-P3”,Nagase ChemteX Corporation制造)100份,将环氧树脂(商品名“HP-4700”,DIC CORPORATION制造)53份、酚醛树脂(商品名“MEH-7851H”,明和化成株式会社制造)69份、球状二氧化硅(商品名“SE-2050-MCV”,Admatechs Co.,Ltd.制造)153份、着色剂(商品名“ORIPAS B-35”,Orient Chemical Industries Co.,Ltd.制造)7份溶解在甲乙酮中,调配成固体成分浓度达到22重量%的粘接剂组合物的溶液。
将该粘接剂组合物的溶液涂布在作为剥离衬垫(隔离体)的由经有机硅脱模处理的厚度为50μm的聚对苯二甲酸乙二醇酯薄膜构成的脱模处理薄膜上,然后在130℃下干燥2分钟,由此制作厚度25μm的半导体背面用薄膜。
(实施例2)
相对于以丙烯酸乙酯-甲基丙烯酸甲酯作为主要成分的丙烯酸酯系聚合物(商品名“Teisanresin SG-P3”,Nagase ChemteX Corporation制造)100份,将环氧树脂(商品名“HP-4700”,DIC CORPORATION制造)9份、酚醛树脂(商品名“MEH-7851H”,明和化成株式会社制造)12份、球状二氧化硅(商品名“SE-2050-MCV”,Admatechs Co.,Ltd.制造)69份、着色剂(商品名“ORIPAS B-35”,Orient Chemical Industries Co.,Ltd.制造)7份溶解在甲乙酮中,从而调配成固体成分浓度达到22重量%的粘接剂组合物的溶液。
将该粘接剂组合物的溶液涂布在作为剥离衬垫(隔离体)的由经有机硅脱模处理的厚度为50μm的聚对苯二甲酸乙二醇酯薄膜构成的脱模处理薄膜上,然后在130℃下干燥2分钟,由此制作厚度25μm的半导体背面用薄膜。
(实施例3)
相对于以丙烯酸乙酯-甲基丙烯酸甲酯作为主要成分的丙烯酸酯系聚合物(商品名“Teisanresin SG-P3”,Nagase ChemteX Corporation制造)100份,将球状二氧化硅(商品名“SE-2050-MCV”,Admatechs Co.,Ltd.制造)153份、着色剂(商品名“ORIPAS B-35”,Orient Chemical Industries Co.,Ltd.制造)7份溶解在甲乙酮中,从而调配成固体成分浓度达到22重量%的粘接剂组合物的溶液。
将该粘接剂组合物的溶液涂布在作为剥离衬垫(隔离体)的由经有机硅脱模处理的厚度为50μm的聚对苯二甲酸乙二醇酯薄膜构成的脱模处理薄膜上,然后在130℃下干燥2分钟,由此制作厚度25μm的半导体背面用薄膜。
(比较例1)
相对于以丙烯酸乙酯-甲基丙烯酸甲酯作为主要成分的丙烯酸酯系聚合物(商品名“Teisanresin SG-P3”,Nagase ChemteX Corporation制造)100份,将着色剂(商品名“ORIPAS B-35”,Orient Chemical Industries Co.,Ltd.制造)7份溶解在甲乙酮中,从而调配成固体成分浓度达到22重量%的粘接剂组合物的溶液。
将该粘接剂组合物的溶液涂布在作为剥离衬垫(隔离体)的由经有机硅脱模处理的厚度为50μm的聚对苯二甲酸乙二醇酯薄膜构成的脱模处理薄膜上,然后在130℃下干燥2分钟,由此制作厚度25μm的半导体背面用薄膜。
(比较例2)
相对于以丙烯酸乙酯-甲基丙烯酸甲酯作为主要成分的丙烯酸酯系聚合物(商品名“Teisanresin SG-P3”,Nagase ChemteX Corporation制造)100份,将环氧树脂(商品名“HP-4700”,DIC CORPORATION制造)109份、酚醛树脂(商品名“MEH-7851H”,明和化成株式会社制造)141份、球状二氧化硅(商品名“SE-2050-MCV”,Admatechs Co.,Ltd.制造)120份、着色剂(商品名“ORIPAS B-35”,Orient Chemical Industries Co.,Ltd.制造)7份溶解在甲乙酮中,从而调配成固体成分浓度达到22重量%的粘接剂组合物的溶液。
将该粘接剂组合物的溶液涂布在作为剥离衬垫(隔离体)的由经有机硅脱模处理的厚度为50μm的聚对苯二甲酸乙二醇酯薄膜构成的脱模处理薄膜上,然后在130℃下干燥2分钟,由此制作厚度25μm的半导体背面用薄膜。
(评价)
针对实施例1~3和比较例1和2中制作的半导体背面用薄膜,进行以下的评价。将结果示于表1。
<半导体背面用薄膜对于半导体晶圆的粘接力的测定>
将作为半导体晶圆的硅晶圆置于热板上,在规定的温度(50℃)下,将2kg的辊往复一次来粘贴用粘合带(商品名“BT315”,日东电工株式会社制造)进行了背面增强的长度150mm、宽度10mm的半导体背面用薄膜。其后,在热板上(50℃)静置2分钟后,在常温(23℃左右)下静置20分钟,放置后,使用剥离试验机(商品名“AUTOGRAPH AGS-J”,岛津制作所制造),在温度70℃的条件下,在剥离角度:180°、拉伸速度:300mm/分钟的条件下,剥掉经背面增强的半导体背面用薄膜(在半导体背面用薄膜与半导体晶圆的界面处进行剥离),测定该剥离时的载荷的最大载荷(除测定初始的峰值以外的载荷的最大值),将该最大载荷作为半导体背面用薄膜对于半导体晶圆的粘接力(N/10mm宽度)而求出。
<断裂伸长率的测定>
使用辊层压机(装置名“MRK-600”,MCK Corporation制造),层叠在70℃、0.2MPa下制作的半导体背面用薄膜,从而得到厚度100μm的测定用半导体背面用薄膜。将测定用半导体背面用薄膜切断成宽度10mm×长度30mm而制成试验片后,作为拉伸试验机使用“AUTOGRAPH ASG-50D型”(岛津制作所制造),在拉伸速度50mm/分钟、卡盘间距离10mm、25℃下进行拉伸试验。求出试验片断裂时的卡盘间距离与试验前的卡盘间距离之比,作为断裂伸长率(%)。
<溶胀度的测定方法>
从半导体背面用薄膜取样约0.1g并精密称量(试样的重量),将该样品用网状片包裹后,在室温下在约50ml乙醇中浸渍1星期。其后,将溶剂不溶成分(网状片的内容物)从乙醇中取出,在室温下风干至重量变化达到1%以下为止。称量此时的风干后的溶剂不溶成分(浸渍/风干后的重量W1)。其后,以130℃加热干燥约2小时,称量干燥后的溶剂不溶成分(浸渍/加热干燥后的重量W2),由下述式(a)算出溶胀度(重量%)。
溶胀度(重量%)=[(W1-W2)/W2]×100···(a)
<剥离性(再加工性)的评价方法>
对半导体晶圆(直径8英寸、厚度0.6mm;硅镜面晶圆)进行背面研磨处理,将厚度0.2mm的镜面晶圆用作工件。在半导体背面用薄膜上以70℃进行辊压接来粘贴镜面晶圆(工件)。放热至室温后,将半导体背面用薄膜自其端部从粘合带BT-315(日东电工株式会社制造)上剥离,能够直接剥离而不会发生断裂且不会在晶圆上产生残渣、或者即使产生残渣也能够用乙醇完全去除时评价为“○”;半导体背面用薄膜发生断裂、晶圆上产生残渣时评价为“×”。
[表1]
实施例1 | 实施例2 | 实施例3 | 比较例1 | 比较例2 | |
25℃下的断裂伸长率[%] | 2 | 500 | 700 | 1000 | 100 |
70℃下的粘接力 | 1 | 5 | 7 | 7 | 8 |
溶胀度[重量%] | 1 | 2 | 1 | 0.5 | 0.5 |
剥离性(再加工性) | ○ | ○ | ○ | × | × |
根据表1,实施例1~3的半导体背面用薄膜的剥离性(再加工性)良好。而比较例1和2的断裂伸长率或粘接力过高,因此剥离性差。
Claims (6)
1.一种半导体背面用薄膜,其在热固化前在70℃下对于晶圆的粘接力为7N/10mm以下,
25℃下的断裂伸长率为700%以下。
2.根据权利要求1所述的半导体背面用薄膜,其中,基于乙醇的溶胀度为1重量%以上。
3.根据权利要求1或2所述的半导体背面用薄膜,其包含丙烯酸类树脂。
4.根据权利要求3所述的半导体背面用薄膜,其中,相对于所述丙烯酸类树脂100重量份,包含50~200重量份的无机填充剂。
5.一种切割带一体型半导体背面用薄膜,其具备:
依次层叠有基材和粘合剂层的切割带、以及
在该切割带的粘合剂层上层叠的权利要求1~4中任一项所述的半导体背面用薄膜。
6.一种半导体装置的制造方法,其是使用权利要求5所述的切割带一体型半导体背面用薄膜制造半导体装置的方法,该方法包括以下工序:
在所述切割带一体型半导体背面用薄膜的半导体背面用薄膜上粘贴半导体晶圆的工序;
将切入深度设定为超过所述粘合剂层的所述半导体背面用薄膜侧的表面且未到达所述基材侧的表面的范围而对所述半导体晶圆进行切割,从而形成半导体芯片的工序;
将所述半导体芯片与所述半导体背面用薄膜一起从切割带的粘合剂层剥离的工序;以及
将所述半导体芯片倒装芯片连接到被粘物上的工序。
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