TW201704409A - 半導體背面用膜及其用途 - Google Patents
半導體背面用膜及其用途 Download PDFInfo
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- TW201704409A TW201704409A TW105117247A TW105117247A TW201704409A TW 201704409 A TW201704409 A TW 201704409A TW 105117247 A TW105117247 A TW 105117247A TW 105117247 A TW105117247 A TW 105117247A TW 201704409 A TW201704409 A TW 201704409A
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Classifications
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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- H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
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Abstract
本發明提供一種具有再加工性之半導體背面用膜及其用途。一種半導體背面用膜,其於熱硬化前於70℃下對於晶圓之接著力為7N/10mm以下,25℃下之斷裂伸長率為700%以下。半導體背面用膜之基於乙醇之膨潤度較佳為1重量%以上。半導體背面用膜較佳為包含丙烯酸系樹脂。
Description
本發明係關於一種半導體背面用膜及其用途。
近年來,更進一步要求半導體裝置及其封裝體之薄型化、小型化。因此,作為半導體裝置及其封裝體,半導體晶片等半導體元件藉由覆晶接合而安裝(覆晶連接)於基板上之覆晶型半導體裝置得以廣泛利用。該覆晶連接以半導體晶片之電路面與基板之電極形成面對向之形態進行固定。此種半導體裝置等有時利用保護膜保護半導體晶片之背面,防止半導體晶片之損傷等(參照專利文獻1~3)。
[專利文獻1]日本專利特開2008-166451號公報
[專利文獻2]日本專利特開2008-006386號公報
[專利文獻3]日本專利特開2007-261035號公報
製造半導體裝置時,半導體背面用膜代表而言如下使用。首先,將半導體背面用膜黏貼於半導體晶圓之背面(大多為未形成電路面)。繼而,將該半導體晶圓與半導體背面用膜一併切割而形成半導體元件。繼而,拾取附半導體背面用膜之半導體元件後,使半導體元件覆晶連接於基板等被接著體上,根據需要使半導體背面用膜發生熱
硬化。藉此,能夠獲得覆晶型之半導體裝置。
此處,半導體背面用膜黏貼於半導體晶圓時,有時裹入氣泡或者黏貼位置發生偏移。於此種狀態下無法直接供於後續步驟,因此,需要將半導體背面用膜自半導體晶圓剝離並再次將(其他)半導體背面用膜黏貼於半導體晶圓之順序(再加工)。
如此,對半導體背面用膜要求能夠自半導體晶圓剝離並再利用於半導體晶圓之再加工性,但半導體背面用膜通常自持續保護半導體晶片背面之觀點而言接著力變高,尚未考慮到再加工性。
本發明係鑒於上述問題方面而進行,其目的在於,提供一種具有再加工性之半導體背面用膜及其用途。
本申請案發明者等為了解決先前問題方面而進行研究,結果發現:藉由採用下述構成,能夠提供一種具有良好之再加工性之半導體背面用膜,從而完成本發明。
即,本發明係關於一種半導體背面用膜,其於熱硬化前於70℃下對於晶圓之接著力為7N/10mm以下,25℃下之斷裂伸長率為700%以下。
該半導體背面用膜於熱硬化前於70℃下對於晶圓之接著力低至7N/10mm以下,從而容易自半導體晶圓剝離。另外,由於25℃下之斷裂伸長率為700%以下,從而防止自半導體晶圓剝離時不慎之延伸、或斷裂。如此,該半導體背面用膜具有接著力較低且不易延伸之特性,因此能夠發揮良好之再加工性。
該半導體背面用膜之基於乙醇之膨潤度較佳為1重量%以上。該半導體背面用膜可利用乙醇而膨潤至上述範圍時,對於半導體晶圓之接著力進一步降低,能夠提高易剝離性。
該半導體背面用膜較佳為包含丙烯酸系樹脂。另外,該半導體
背面用膜相對於上述丙烯酸系樹脂100重量份較佳為包含50~200重量份之無機填充劑。藉此,可適合地控制上述接著力及斷裂伸長率。
本發明又關於一種切割帶一體型半導體背面用膜,其具備:依次積層有基材及黏著劑層之切割帶、以及於該切割帶之黏著劑層上積層之該半導體背面用膜。
本發明進而關於一種半導體裝置之製造方法,其係使用該切割帶一體型半導體背面用膜製造半導體裝置之方法,且包括如下步驟:於上述切割帶一體型半導體背面用膜之半導體背面用膜上黏貼半導體晶圓之步驟;將切入深度設定為超過上述黏著劑層之上述半導體背面用膜側之面且未到達上述基材側之面之範圍而對上述半導體晶圓進行切割,從而形成半導體晶片之步驟;將上述半導體晶片與上述半導體背面用膜一起自切割帶之黏著劑層剝離之步驟;以及將上述半導體晶片覆晶連接於被接著體上之步驟。
1‧‧‧切割帶一體型半導體背面用膜
2‧‧‧半導體背面用膜
3‧‧‧切割帶
4‧‧‧半導體晶圓
5‧‧‧半導體晶片
6‧‧‧被接著體
31‧‧‧基材
32‧‧‧黏著劑層
33‧‧‧對應於半導體晶圓之黏貼部分之部分
51‧‧‧形成於半導體晶片5之電路面側之凸塊
61‧‧‧黏附於被接著體6之連接焊盤上之接合用之導電材料
圖1為表示本發明之一實施形態之切割帶一體型半導體背面用膜之截面示意圖。
圖2A為表示使用本發明之一實施形態之切割帶一體型半導體背面用膜製造半導體裝置之方法之一步驟之截面示意圖。
圖2B為表示使用本發明之一實施形態之切割帶一體型半導體背面用膜製造半導體裝置之方法之一步驟之截面示意圖。
圖2C為表示使用本發明之一實施形態之切割帶一體型半導體背面用膜製造半導體裝置之方法之一步驟之截面示意圖。
圖2D為表示使用本發明之一實施形態之切割帶一體型半導體背面用膜製造半導體裝置之方法之一步驟之截面示意圖。
參照附圖對本發明之一實施形態進行說明,但本發明不限定於該等例。另外,本說明書中,圖中省略無需說明之部分,另外,為了容易說明,存在放大或縮小等來圖示之部分。
以下主要針對半導體背面用膜積層於切割帶之形態進行說明。圖1為表示本實施形態之切割帶一體型半導體背面用膜之一例之截面示意圖。其中,於單獨之半導體背面用膜之形態下亦可適合地利用。
(切割帶一體型半導體背面用膜)
如圖1所示,切割帶一體型半導體背面用膜1為具備於基材31上設置有黏著劑層32之切割帶3及設置於上述黏著劑層上且適合於覆晶型半導體之半導體背面用膜2之構成。另外,本發明之切割帶一體型半導體背面用膜如圖1所示,可為於切割帶3之黏著劑層32上僅於對應於半導體晶圓之黏貼部分之部分33形成有半導體背面用膜2之構成,亦可為於黏著劑層32之整面形成有半導體背面用膜之構成,另外,亦可為於大於對應於半導體晶圓之黏貼部分之部分33且小於黏著劑層32之整面之部分形成有半導體背面用膜之構成。另外,半導體背面用膜2之表面(會黏貼於晶圓背面之一側之面)可於直至黏貼於晶圓背面為止之期間被隔離體等保護。
(半導體背面用膜)
半導體背面用膜2(參照圖1)具有膜狀之形態。為了保護半導體晶片等半導體元件之背面及提高強度等而適合使用半導體背面用膜2。半導體背面用膜2通常於其單獨存在之形態下、於切割帶一體型半導體背面用膜之形態下為未硬化狀態(包括半硬化狀態),將半導體背面用膜黏貼於半導體晶圓後使其熱硬化。
半導體背面用膜對於半導體晶圓之接著力(70℃、剝離角度為180度、剝離速度為300mm/分鐘)較佳為7N/10mm以下,更佳為0.5N/10
mm~6.5N/10mm之範圍,進而較佳為1.0N/10mm~6.0N/10mm之範圍。藉由使接著力為上述範圍,能夠保持其對於半導體晶圓之接著性,並且提高再加工性。
半導體背面用膜之25℃下之斷裂伸長率較佳為700%以下,更佳為50%以上且600%以下,進而較佳為100%以上且500%以下。藉由使斷裂伸長率為上述範圍,能夠防止自半導體晶圓剝離半導體背面用膜時不慎之延伸、或斷裂,進一步提高再加工性。
半導體背面用膜之基於乙醇之膨潤度較佳為1重量%以上,更佳為1.5重量%以上,進而較佳為2.0重量%以上。另外,膨潤度較佳為100重量%以下,更佳為50重量%以下。藉此,自半導體晶圓剝離半導體背面用膜時能夠利用乙醇使半導體背面用膜發生膨潤,因此能夠進一步提高再加工性。
<膨潤度之測定方法>
自半導體背面用膜取樣約0.1g並精密稱量(試樣之重量),將該樣品用網狀片包裹後,於室溫下於約50ml乙醇中浸漬1星期。其後,將溶劑不溶成分(網狀片之內容物)自乙醇中取出,於室溫下風乾至重量變化達到1%以下為止。稱量此時之風乾後之溶劑不溶成分(浸漬/風乾後之重量W1)。其後,以130℃加熱乾燥約2小時,稱量乾燥後之溶劑不溶成分(浸漬/加熱乾燥後之重量W2),由下述式(a)算出膨潤度(重量%)。
膨潤度(重量%)=[(W1-W2)/W2]×100‧‧‧(a)
另外,半導體背面用膜之膨潤度可根據樹脂成分之種類或其含量、交聯劑之種類或其含量、以及加熱溫度或加熱時間等來控制。
半導體背面用膜2較佳為至少由熱硬化性樹脂形成,進而,更佳為至少由熱硬化性樹脂及熱塑性樹脂形成。另外,構成半導體背面用膜2之樹脂中可包含熱硬化促進催化劑。藉由至少由熱硬化性樹脂形
成,接著劑層能夠有效地發揮接著功能。
作為上述熱塑性樹脂,例如可列舉:天然橡膠、丁基橡膠、異戊二烯橡膠、氯丁橡膠、乙烯-醋酸乙烯酯共聚物、乙烯-丙烯酸共聚物、乙烯-丙烯酸酯共聚物、聚丁二烯樹脂、聚碳酸酯樹脂、熱塑性聚醯亞胺樹脂、6-尼龍、或6,6-尼龍等聚醯胺樹脂、苯氧基樹脂、丙烯酸系樹脂、PET(聚對苯二甲酸乙二酯)、或PBT(聚對苯二甲酸丁二酯)等飽和聚酯樹脂、聚醯胺醯亞胺樹脂、或氟樹脂等。熱塑性樹脂可單獨使用或組合使用2種以上。該等熱塑性樹脂之中,特別較佳為離子性雜質較少且耐熱性較高、能夠確保半導體元件之可靠性之丙烯酸系樹脂。
作為上述丙烯酸系樹脂,並無特別限定,可列舉以具有碳數30以下(較佳為碳數4~18,進而較佳為碳數6~10,特別較佳為碳數8或9)之直鏈或支鏈之烷基之丙烯酸或甲基丙烯酸之酯之1種或2種以上作為成分之聚合物等。即,本發明中,丙烯酸系樹脂表示亦包括甲基丙烯酸系樹脂之廣義含義。作為上述烷基,例如可列舉:甲基、乙基、正丙基、異丙基、正丁基、第三丁基、異丁基、正戊基、異戊基、己基、庚基、2-乙基己基、正辛基、異辛基、正壬基、異壬基、癸基、異癸基、十一烷基、十二烷基(月桂基)、十三烷基、十四烷基、硬脂基、十八烷基等。
此外,作為用於形成上述丙烯酸系樹脂之其他單體(除烷基之碳數為30以下之丙烯酸或甲基丙烯酸之烷基酯以外之單體),並無特別限定,例如可列舉:丙烯酸、甲基丙烯酸、丙烯酸羧基乙酯、丙烯酸羧基戊酯、衣康酸、馬來酸、富馬酸或巴豆酸等之類之含羧基單體,馬來酸酐或衣康酸酐等之類之酸酐單體,(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸2-羥基丙酯、(甲基)丙烯酸4-羥基丁酯、(甲基)丙烯酸6-羥基己酯、(甲基)丙烯酸8-羥基辛酯、(甲基)丙烯酸10-羥基癸酯、(甲
基)丙烯酸12-羥基月桂酯或丙烯酸(4-羥基甲基環己基)-甲酯等之類之含羥基單體,苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯醯胺-2-甲基丙磺酸、(甲基)丙烯醯胺丙磺酸、(甲基)丙烯酸磺基丙酯或(甲基)丙烯醯氧基萘磺酸等之類之含磺酸基單體,或者2-羥基乙基丙烯醯基磷酸酯等之類之含磷酸基單體等。再者,(甲基)丙烯酸係指丙烯酸及/或甲基丙烯酸,本發明之(甲基)全部意義相同。
另外,作為上述熱硬化性樹脂,除了環氧樹脂、酚醛樹脂之外,亦可列舉:胺基樹脂、不飽和聚酯樹脂、聚胺基甲酸酯樹脂、有機矽樹脂、熱硬化性聚醯亞胺樹脂等。熱硬化性樹脂可單獨使用或組合使用2種以上。作為熱硬化性樹脂,含會腐蝕半導體元件之離子性雜質等較少之環氧樹脂尤為適宜。此外,作為環氧樹脂之硬化劑,可適宜地使用酚醛樹脂。
作為環氧樹脂,並無特別限定,例如可使用:雙酚A型環氧樹脂、雙酚F型環氧樹脂、雙酚S型環氧樹脂、溴化雙酚A型環氧樹脂、氫化雙酚A型環氧樹脂、雙酚AF型環氧樹脂、聯苯型環氧樹脂、萘型環氧樹脂、芴型環氧樹脂、苯酚酚醛清漆型環氧樹脂、鄰甲酚酚醛清漆型環氧樹脂、三羥基苯基甲烷型環氧樹脂、四酚基乙烷型環氧樹脂等二官能環氧樹脂、或多官能環氧樹脂,或乙內醯脲型環氧樹脂、異氰脲酸三縮水甘油酯型環氧樹脂或縮水甘油胺型環氧樹脂等環氧樹脂。
作為環氧樹脂,於上述例示中,特別較佳為酚醛清漆型環氧樹脂、聯苯型環氧樹脂、三羥基苯基甲烷型環氧樹脂、四酚基乙烷型環氧樹脂。其理由為,該等環氧樹脂富有與作為硬化劑之酚醛樹脂之反應性,耐熱性等優異。
進而,上述酚醛樹脂作為上述環氧樹脂之硬化劑起作用,例如可列舉:苯酚酚醛清漆樹脂、苯酚芳烷基樹脂、甲酚酚醛清漆樹脂、
第三丁基苯酚酚醛清漆樹脂、壬基苯酚酚醛清漆樹脂等酚醛清漆型酚醛樹脂,可溶酚醛型酚醛樹脂,聚對氧苯乙烯等聚氧苯乙烯等。酚醛樹脂可單獨使用或組合使用2種以上。該等酚醛樹脂之中,特別較佳為苯酚酚醛清漆樹脂、苯酚芳烷基樹脂。其理由為,能夠提高半導體裝置之連接可靠性。
對於環氧樹脂與酚醛樹脂之調配比例,例如,較佳為以酚醛樹脂中之羥基相對於上述環氧樹脂成分中之每1當量環氧基為0.5當量~2.0當量之方式調配。更適宜為0.8當量~1.2當量。即,其理由為,兩者之調配比例偏離上述範圍時,無法進行充分之硬化反應,環氧樹脂硬化物之特性變得容易劣化。
作為上述熱硬化性樹脂之含量,相對於接著劑層中之全部樹脂成分,較佳為5重量%以上且90重量%以下,更佳為10重量%以上且85重量%以下,進而較佳為15重量%以上且80重量%以下。藉由使上述含量為5重量%以上,能夠容易地使熱硬化收縮量為2體積%以上。另外,使封裝樹脂發生熱硬化時,能夠使接著劑層充分地熱硬化而可靠地接著固定於半導體元件之背面,能夠製造未剝離之覆晶型半導體裝置。另一方面,藉由使上述含量為90重量%以下,能夠抑制封裝體(PKG:覆晶型之半導體裝置)之翹曲。
作為環氧樹脂與酚醛樹脂之熱硬化促進催化劑,並無特別限定,可自公知之熱硬化促進催化劑中適當選擇並使用。熱硬化促進催化劑可以單獨使用或組合2種以上使用。作為熱硬化促進催化劑,例如可使用:胺系硬化促進劑、磷系硬化促進劑、咪唑系硬化促進劑、硼系硬化促進劑、磷-硼系硬化促進劑等。
作為上述半導體背面用膜,較佳為由含有環氧樹脂及酚醛樹脂之樹脂組合物、或含有環氧樹脂、酚醛樹脂及丙烯酸系樹脂之樹脂組合物形成。該等樹脂由於離子性雜質較少且耐熱性較高,因此能夠確
保半導體元件之可靠性。
半導體背面用膜2重要為對半導體晶圓之背面(未形成電路之面)具有接著性(密接性)。半導體背面用膜2例如可以由含有作為熱硬化性樹脂之環氧樹脂之樹脂組合物形成。為了預先使半導體背面用膜2進行一定程度之交聯,較佳於製作時預先添加與聚合物之分子鏈末端之官能基等反應之多官能性化合物作為交聯劑。藉此,能夠提高高溫下之接著特性,能夠實現耐熱性之改善。
作為上述交聯劑,並無特別限制,可使用公知之交聯劑。具體而言,例如除了異氰酸酯系交聯劑、環氧系交聯劑、三聚氰胺系交聯劑、過氧化物系交聯劑之外,亦可列舉:尿素系交聯劑、金屬醇鹽系交聯劑、金屬螯合物系交聯劑、金屬鹽系交聯劑、碳二亞胺系交聯劑、噁唑啉系交聯劑、氮丙啶系交聯劑、胺系交聯劑等。作為交聯劑,適宜為異氰酸酯系交聯劑、或環氧系交聯劑。此外,上述交聯劑可單獨使用或組合使用2種以上。
作為上述異氰酸酯系交聯劑,例如可列舉:1,2-亞乙基二異氰酸酯、1,4-亞丁基二異氰酸酯、1,6-六亞甲基二異氰酸酯等低級脂肪族聚異氰酸酯類;亞環戊基二異氰酸酯、亞環己基二異氰酸酯、異佛爾酮二異氰酸酯、氫化甲苯二異氰酸酯、氫化二甲苯二異氰酸酯等脂環族聚異氰酸酯類;2,4-甲苯二異氰酸酯、2,6-甲苯二異氰酸酯、4,4'-二苯基甲烷二異氰酸酯、苯二亞甲基二異氰酸酯等芳香族聚異氰酸酯類等,此外亦可使用:三羥甲基丙烷/甲苯二異氰酸酯三聚體加成物[日本聚胺酯工業股份有限公司製造,商品名「CORONATE L」]、三羥甲基丙烷/六亞甲基二異氰酸酯三聚體加成物[日本聚胺酯工業股份有限公司製造,商品名「CORONATE HL」]等。此外,作為上述環氧系交聯劑,例如可列舉:N,N,N',N'-四縮水甘油基間苯二甲胺、二縮水甘油基苯胺、1,3-雙(N,N-縮水甘油基胺基甲基)環己烷、1,6-己二醇
二縮水甘油醚、新戊二醇二縮水甘油醚、乙二醇二縮水甘油醚、丙二醇二縮水甘油醚、聚乙二醇二縮水甘油醚、聚丙二醇二縮水甘油醚、山梨醇聚縮水甘油醚、甘油聚縮水甘油醚、季戊四醇聚縮水甘油醚、聚甘油聚縮水甘油醚、山梨醇酐聚縮水甘油醚、三羥甲基丙烷聚縮水甘油醚、己二酸二縮水甘油酯、鄰苯二甲酸二縮水甘油酯、三縮水甘油基-三(2-羥基乙基)異氰脲酸酯、間苯二酚二縮水甘油醚、雙酚-S-二縮水甘油醚,此外亦可列舉分子內具有2個以上環氧基之環氧系樹脂等。
另外,對交聯劑之使用量並無特別限制,可根據進行交聯之程度而適當選擇。具體而言,作為交聯劑之使用量,例如相對於聚合物成分(尤其是具有分子鏈末端之官能基之聚合物)100重量份,通常較佳為設為7重量份以下(例如0.05重量份~7重量份)。相對於聚合物成分100重量份,交聯劑之使用量多於7重量份時,接著力降低,故而不佳。另外,就提高凝聚力之觀點而言,相對於聚合物成分100重量份,交聯劑之使用量較佳為0.05重量份以上。
另外,本發明中,亦可藉由照射電子束、或紫外線等實施交聯處理來代替使用交聯劑,或者於使用交聯劑之同時藉由照射電子束、或紫外線等實施交聯處理。
上述半導體背面用膜較佳為進行著色。藉此,能夠發揮優異之標記性及外觀性,可製成具有附加價值之外觀之半導體裝置。如此,經著色之半導體背面用膜具有優異之標記性,因此於半導體元件或使用該半導體元件之半導體裝置之非電路面側之面,借助半導體背面用膜,利用印刷方法、或雷射標記方法等各種標記方法實施標記,可賦予文字資訊、或圖形資訊等各種資訊。尤其,藉由控制著色之顏色,可使藉由標記所賦予之資訊(文字資訊、圖形資訊等)以優異之視覺識別性被識別。此外,半導體背面用膜由於被著色,因此亦能夠容易地
將切割帶與半導體背面用膜相區別,能夠提高作業性等。進而,例如作為半導體裝置,還可以根據產品而用顏色進行區別。於使半導體背面用膜有色之情況下(非無色/透明之情形時),作為藉由著色所呈現之顏色,並無特別限制,例如較佳為黑色、藍色、紅色等深色,特別適宜為黑色。
於本實施形態中,深色係指:基本上L*a*b*表色系中規定之L*為60以下(0~60)[較佳為50以下(0~50),進而較佳為40以下(0~40)]之深顏色。
此外,黑色係指:基本上L*a*b*表色系中規定之L*為35以下(0~35)[較佳為30以下(0~30),進而較佳為25以下(0~25)]之黑色系顏色。另外,於黑色中,L*a*b*表色系中規定之a*、b*可分別根據L*之值而適當選擇。作為a*、b*,例如,雙方均較佳為-10~10,更佳為-5~5,特別較佳為-3~3之範圍(尤其是0或基本為0)。
另外,於本實施形態中,L*a*b*表色系中規定之L*、a*、b*藉由使用色彩色差計(商品名「CR-200」Minolta公司製造;色彩色差計)測定來求出。另外,L*a*b*表色系係國際照明委員會(CIE)於1976年推薦之色彩空間,係指被稱為CIE1976(L*a*b*)表色系之色彩空間。此外,L*a*b*表色系於日本工業標準之JIS Z 8729中進行了規定。
對半導體背面用膜進行著色時,可根據目標顏色來使用色材(著色劑)。作為此種色材,可適宜地使用黑色系色材、藍色系色材、紅色系色材等各種深色系色材,黑色系色材尤為適宜。作為色材,可為顏料、染料等之任一種。色材可單獨使用或組合2種以上使用。另外,作為染料,酸性染料、反應染料、直接染料、分散染料、陽離子染料等任一形態之染料均可使用。另外,對顏料之形態亦無特別限定,可自公知之顏料中適當選擇並使用。
尤其,作為色材使用染料時,於半導體背面用膜中,染料因溶
解而呈現均勻或基本均勻分散之狀態,因此能夠容易地製造著色濃度均勻或基本均勻之半導體背面用膜(甚至是切割帶一體型半導體背面用膜)。因此,作為色材使用染料時,切割帶一體型半導體背面用膜中之半導體背面用膜能夠使著色濃度均勻或基本均勻,能夠提高標記性、或外觀性。
作為黑色系色材,並無特別限制,例如可自無機之黑色系顏料、黑色系染料中適當選擇。此外,作為黑色系色材,亦可為混合有青色(cyan)系色材(藍綠色系色材)、品紅(magenda)系色材(紫紅色系色材)及黃色系色材(yellow系色材)之色材混合物。黑色系色材可單獨使用或組合2種以上使用。當然,黑色系色材亦可與黑色以外顏色之色材組合使用。
具體而言,作為黑色系色材,例如可列舉:碳黑(爐法碳黑、槽法碳黑、乙炔黑、熱裂碳黑、燈黑等)、石墨(graphite)、氧化銅、二氧化錳、偶氮系顏料(甲亞胺偶氮黑(azomethine azo black)等)、苯胺黑、苝黑、鈦黑、花青黑、活性碳、鐵素體(非磁性鐵素體、磁性鐵素體等)、磁鐵礦、氧化鉻、氧化鐵、二硫化鉬、鉻錯合物、複合氧化物系黑色色素、蒽醌系有機黑色色素等。
本發明中,作為黑色系色材,亦可利用:C.I.溶劑黑3、C.I.溶劑黑7、C.I.溶劑黑22、C.I.溶劑黑27、C.I.溶劑黑29、C.I.溶劑黑34、C.I.溶劑黑43、C.I.溶劑黑70,C.I.直接黑17、C.I.直接黑19、C.I.直接黑22、C.I.直接黑32、C.I.直接黑38、C.I.直接黑51、C.I.直接黑71,C.I.酸性黑1、C.I.酸性黑2、C.I.酸性黑24、C.I.酸性黑26、C.I.酸性黑31、C.I.酸性黑48、C.I.酸性黑52、C.I.酸性黑107、C.I.酸性黑109、C.I.酸性黑110、C.I.酸性黑119、C.I.酸性黑154,C.I.分散黑1、C.I.分散黑3、C.I.分散黑10、C.I.分散黑24等黑色系染料;C.I.顏料黑1、C.I.顏料黑7等黑色系顏料等。
作為此種黑色系色材,例如市售有商品名「Oil Black BY」、商品名「Oil Black BS」、商品名「Oil Black HBB」、商品名「Oil Black 803」、商品名「Oil Black 860」、商品名「Oil Black 5970」、商品名「Oil Black 5906」、商品名「Oil Black 5905」(Orient化學工業股份有限公司製造)等。
作為黑色系色材以外之色材,例如可列舉青色系色材、品紅系色材、黃色系色材等。作為青色系色材,例如可列舉:C.I.溶劑藍25、C.I.溶劑藍36、C.I.溶劑藍60、C.I.溶劑藍70、C.I.溶劑藍93、C.I.溶劑藍95;C.I.酸性藍6、C.I.酸性藍45等青色系染料;C.I.顏料藍1、C.I.顏料藍2、C.I.顏料藍3、C.I.顏料藍15、C.I.顏料藍15:1、C.I.顏料藍15:2、C.I.顏料藍15:3、C.I.顏料藍15:4、C.I.顏料藍15:5、C.I.顏料藍15:6、C.I.顏料藍16、C.I.顏料藍17、C.I.顏料藍17:1、C.I.顏料藍18、C.I.顏料藍22、C.I.顏料藍25、C.I.顏料藍56、C.I.顏料藍60、C.I.顏料藍63、C.I.顏料藍65、C.I.顏料藍66;C.I.還原藍4、C.I.還原藍60;C.I.顏料綠7等青色系顏料等。
此外,於品紅系色材中,作為品紅系染料,例如可列舉:C.I.溶劑紅1、C.I.溶劑紅3、C.I.溶劑紅8、C.I.溶劑紅23、C.I.溶劑紅24、C.I.溶劑紅25、C.I.溶劑紅27、C.I.溶劑紅30、C.I.溶劑紅49、C.I.溶劑紅52、C.I.溶劑紅58、C.I.溶劑紅63、C.I.溶劑紅81、C.I.溶劑紅82、C.I.溶劑紅83、C.I.溶劑紅84、C.I.溶劑紅100、C.I.溶劑紅109、C.I.溶劑紅111、C.I.溶劑紅121、C.I.溶劑紅122;C.I.分散紅9;C.I.溶劑紫8、C.I.溶劑紫13、C.I.溶劑紫14、C.I.溶劑紫21、C.I.溶劑紫27;C.I.分散紫1;C.I.鹼性紅1、C.I.鹼性紅2、C.I.鹼性紅9、C.I.鹼性紅12、C.I.鹼性紅13、C.I.鹼性紅14、C.I.鹼性紅15、C.I.鹼性紅17、C.I.鹼性紅18、C.I.鹼性紅22、C.I.鹼性紅23、C.I.鹼性紅24、C.I.鹼性紅27、C.I.鹼性紅29、C.I.鹼性紅32、C.I.鹼性紅34、C.I.鹼性紅35、C.I.鹼性
紅36、C.I.鹼性紅37、C.I.鹼性紅38、C.I.鹼性紅39、C.I.鹼性紅40;C.I.鹼性紫1、C.I.鹼性紫3、C.I.鹼性紫7、C.I.鹼性紫10、C.I.鹼性紫14、C.I.鹼性紫15、C.I.鹼性紫21、C.I.鹼性紫25、C.I.鹼性紫26、C.I.鹼性紫27、C.I.鹼性紫28等。
於品紅系色材中,作為品紅系顏料,例如可列舉出:C.I.顏料紅1、C.I.顏料紅2、C.I.顏料紅3、C.I.顏料紅4、C.I.顏料紅5、C.I.顏料紅6、C.I.顏料紅7、C.I.顏料紅8、C.I.顏料紅9、C.I.顏料紅10、C.I.顏料紅11、C.I.顏料紅12、C.I.顏料紅13、C.I.顏料紅14、C.I.顏料紅15、C.I.顏料紅16、C.I.顏料紅17、C.I.顏料紅18、C.I.顏料紅19、C.I.顏料紅21、C.I.顏料紅22、C.I.顏料紅23、C.I.顏料紅30、C.I.顏料紅31、C.I.顏料紅32、C.I.顏料紅37、C.I.顏料紅38、C.I.顏料紅39、C.I.顏料紅40、C.I.顏料紅41、C.I.顏料紅42、C.I.顏料紅48:1、C.I.顏料紅48:2、C.I.顏料紅48:3、C.I.顏料紅48:4、C.I.顏料紅49、C.I.顏料紅49:1、C.I.顏料紅50、C.I.顏料紅51、C.I.顏料紅52、C.I.顏料紅52:2、C.I.顏料紅53:1、C.I.顏料紅54、C.I.顏料紅55、C.I.顏料紅56、C.I.顏料紅57:1、C.I.顏料紅58、C.I.顏料紅60、C.I.顏料紅60:1、C.I.顏料紅63、C.I.顏料紅63:1、C.I.顏料紅63:2、C.I.顏料紅64、C.I.顏料紅64:1、C.I.顏料紅67、C.I.顏料紅68、C.I.顏料紅81、C.I.顏料紅83、C.I.顏料紅87、C.I.顏料紅88、C.I.顏料紅89、C.I.顏料紅90、C.I.顏料紅92、C.I.顏料紅101、C.I.顏料紅104、C.I.顏料紅105、C.I.顏料紅106、C.I.顏料紅108、C.I.顏料紅112、C.I.顏料紅114、C.I.顏料紅122、C.I.顏料紅123、C.I.顏料紅139、C.I.顏料紅144、C.I.顏料紅146、C.I.顏料紅147、C.I.顏料紅149、C.I.顏料紅150、C.I.顏料紅151、C.I.顏料紅163、C.I.顏料紅166、C.I.顏料紅168、C.I.顏料紅170、C.I.顏料紅171、C.I.顏料紅172、C.I.顏料紅175、C.I.顏料紅176、C.I.顏料紅177、C.I.顏料紅178、C.I.顏料紅179、C.I.顏料紅
184、C.I.顏料紅185、C.I.顏料紅187、C.I.顏料紅190、C.I.顏料紅193、C.I.顏料紅202、C.I.顏料紅206、C.I.顏料紅207、C.I.顏料紅209、C.I.顏料紅219、C.I.顏料紅222、C.I.顏料紅224、C.I.顏料紅238、C.I.顏料紅245;C.I.顏料紫3、C.I.顏料紫9、C.I.顏料紫19、C.I.顏料紫23、C.I.顏料紫31、C.I.顏料紫32、C.I.顏料紫33、C.I.顏料紫36、C.I.顏料紫38、C.I.顏料紫43、C.I.顏料紫50;C.I.還原紅1、C.I.還原紅2、C.I.還原紅10、C.I.還原紅13、C.I.還原紅15、C.I.還原紅23、C.I.還原紅29、C.I.還原紅35等。
此外,作為黃色系色材,例如可列舉:C.I.溶劑黃19、C.I.溶劑黃44、C.I.溶劑黃77、C.I.溶劑黃79、C.I.溶劑黃81、C.I.溶劑黃82、C.I.溶劑黃93、C.I.溶劑黃98、C.I.溶劑黃103、C.I.溶劑黃104、C.I.溶劑黃112、C.I.溶劑黃162等黃色系染料;C.I.顏料橙31、C.I.顏料橙43;C.I.顏料黃1、C.I.顏料黃2、C.I.顏料黃3、C.I.顏料黃4、C.I.顏料黃5、C.I.顏料黃6、C.I.顏料黃7、C.I.顏料黃10、C.I.顏料黃11、C.I.顏料黃12、C.I.顏料黃13、C.I.顏料黃14、C.I.顏料黃15、C.I.顏料黃16、C.I.顏料黃17、C.I.顏料黃23、C.I.顏料黃24、C.I.顏料黃34、C.I.顏料黃35、C.I.顏料黃37、C.I.顏料黃42、C.I.顏料黃53、C.I.顏料黃55、C.I.顏料黃65、C.I.顏料黃73、C.I.顏料黃74、C.I.顏料黃75、C.I.顏料黃81、C.I.顏料黃83、C.I.顏料黃93、C.I.顏料黃94、C.I.顏料黃95、C.I.顏料黃97、C.I.顏料黃98、C.I.顏料黃100、C.I.顏料黃101、C.I.顏料黃104、C.I.顏料黃108、C.I.顏料黃109、C.I.顏料黃110、C.I.顏料黃113、C.I.顏料黃114、C.I.顏料黃116、C.I.顏料黃117、C.I.顏料黃120、C.I.顏料黃128、C.I.顏料黃129、C.I.顏料黃133、C.I.顏料黃138、C.I.顏料黃139、C.I.顏料黃147、C.I.顏料黃150、C.I.顏料黃151、C.I.顏料黃153、C.I.顏料黃154、C.I.顏料黃155、C.I.顏料黃156、C.I.顏料黃167、C.I.顏料黃172、C.I.顏料黃173、C.I.顏料黃
180、C.I.顏料黃185、C.I.顏料黃195;C.I.還原黃1、C.I.還原黃3、C.I.還原黃20等黃色系顏料等。
青色系色材、品紅系色材、黃色系色材等各種色材可分別單獨使用或組合2種以上使用。另外,青色系色材、品紅系色材、黃色系色材等各種色材使用2種以上時,作為該等色材之混合比例(或調配比例),並無特別限制,可根據各色材之種類、或目標顏色等而適當選擇。
使半導體背面用膜2著色時,其著色形態並無特別限定。例如,半導體背面用膜可為添加有著色劑之單層膜狀物。另外,亦可為至少積層有至少由熱硬化性樹脂形成之樹脂層與著色劑層之積層膜。另外,半導體背面用膜2為樹脂層與著色劑層之積層膜時,作為積層形態之半導體背面用膜2,較佳為具有樹脂層/著色劑層/樹脂層之積層形態。此時,著色劑層之兩側之2個樹脂層可為組成相同之樹脂層,亦可為組成不同之樹脂層。
半導體背面用膜2中可根據需要適當調配其他添加劑。作為其他添加劑,例如除了填充劑(填料)、阻燃劑、矽烷偶聯劑、離子捕捉劑之外亦可列舉增量劑、防老化劑、抗氧化劑、界面活性劑等。
作為上述填充劑,可為無機填充劑、有機填充劑中之任一種,適宜為無機填充劑。藉由調配無機填充劑等填充劑,能夠對半導體背面用膜賦予導電性、或提高導熱性、調節彈性彈性模數等。另外,作為半導體背面用膜2,可為導電性,亦可為非導電性。作為上述無機填充劑,例如可列舉:二氧化矽、黏土、石膏、碳酸鈣、硫酸鋇、氧化鋁、氧化鈹、碳化矽、氮化矽等陶瓷類,鋁、銅、銀、金、鎳、鉻、鉛、錫、鋅、鈀、焊料等金屬或合金類,以及其他包含碳等之各種無機粉末等。填充劑可單獨使用或組合使用2種以上。作為填充劑,其中適宜為二氧化矽、特別是熔融二氧化矽。另外,無機填充劑
之平均粒徑較佳為0.1μm~80μm之範圍內。無機填料之平均粒徑係指利用雷射繞射型粒度分佈測定裝置測得之值。
對於上述填充劑(特別是無機填充劑)之調配量,於半導體背面用膜包含丙烯酸系樹脂之情形時,相對於丙烯酸系樹脂100重量份較佳為50重量份~200重量份,更佳為60重量份~180重量份。
此外,作為上述阻燃劑,例如可列舉三氧化二銻、五氧化三銻、溴化環氧樹脂等。阻燃劑可單獨使用或組合使用2種以上。作為上述矽烷偶聯劑,例如可列舉β-(3,4-環氧環己基)乙基三甲氧基矽烷、γ-環氧丙氧基丙基三甲氧基矽烷、γ-環氧丙氧基丙基甲基二乙氧基矽烷等。矽烷偶聯劑可單獨使用或組合使用2種以上。作為上述離子捕捉劑,例如可列舉水滑石類、氫氧化鉍等。離子捕捉劑可單獨使用或組合使用2種以上。
半導體背面用膜2例如可利用如下慣用方法形成:混合環氧樹脂等熱硬化性樹脂、視需要而定之丙烯酸系樹脂等熱塑性樹脂、以及視需要而定之溶劑、或其他添加劑等製備樹脂組合物,形成膜狀之層。具體而言,例如可列舉:將上述樹脂組合物塗佈於適當之隔離體(剝離紙等)上並乾燥,從而形成半導體背面用膜之方法等。另外,直接形成於切割帶之黏著劑層上時,藉由將上述樹脂組合物塗佈於切割帶之黏著劑層32上之方法、將形成於隔離體上之接著劑層轉印(轉移)至黏著劑層32上之方法等,能夠形成半導體背面用膜。上述樹脂組合物可為溶液,亦可為分散液。
另外,半導體背面用膜2由含有環氧樹脂等熱硬化性樹脂之樹脂組合物形成時,半導體背面用膜於應用於半導體晶圓之前之階段,熱硬化性樹脂處於未硬化或部分硬化之狀態。該情形時,於應用於半導體晶圓之後(具體而言為通常於覆晶接合步驟中使封裝材料硬化(cure)時),使半導體背面用膜中之熱硬化性樹脂完全或基本完全硬化。
本發明中,半導體背面用膜係由包含環氧樹脂等熱硬化性樹脂之樹脂組合物形成之膜狀物時,能夠有效地發揮對於半導體晶圓之密接性。
另外,半導體晶圓之切割步驟中使用切削水,因此,半導體背面用膜發生吸濕,有時達到常態以上之含水率。於此種高含水率之狀態下直接進行覆晶接合時,有時於半導體背面用膜2與半導體晶圓或其加工體(半導體)之接著界面滯留有水蒸氣而發生浮起。因此,作為半導體背面用膜,藉由製成兩面設置有透濕性較高之芯材料之構成,水蒸氣會擴散而能夠避免所述問題。就所述觀點而言,可將於芯材料之單面或雙面形成有半導體背面用膜2、12之複層結構用作半導體背面用膜。作為上述芯材料,可列舉膜(例如聚醯亞胺膜、聚酯膜、聚對苯二甲酸乙二酯膜、聚萘二甲酸乙二酯膜、聚碳酸酯膜等)、用玻璃纖維、或塑膠製不織纖維強化之樹脂基板、矽基板或玻璃基板等。
半導體背面用膜2之厚度(於積層膜之情形時為總厚度)並無特別限定,例如可自2μm~200μm左右之範圍內適當選擇。進而,上述厚度較佳為4μm~160μm左右,更佳為6μm~100μm左右,特別較佳為10μm~80μm左右。
上述半導體背面用膜2於未硬化狀態下23℃下之延伸儲藏彈性模數較佳為1GPa以上(例如1GPa~50GPa),更佳為2GPa以上,特別較佳為3GPa以上。上述延伸儲藏彈性模數為1GPa以上時,將半導體晶片與半導體背面用膜2一起自切割帶之黏著劑層32剝離之後,將半導體背面用膜2載置於支持體上進行輸送等之時候,能夠有效地抑制或防止半導體背面用膜黏貼於支持體。再者,上述支持體係指例如載帶中之頂帶(top tape)、底帶(bottom tape)等。另外,半導體背面用膜2由包含熱硬化性樹脂之樹脂組合物形成時,如上所述,熱硬化性樹脂通常為未硬化或部分硬化之狀態,因此,半導體背面用膜之23℃下之彈
性彈性模數通常成為熱硬化性樹脂於未硬化狀態或部分硬化狀態下之23℃下之彈性彈性模數。
此處,半導體背面用膜2可為單層,亦可為複層積層得到之積層膜,於積層膜之情形時,上述未硬化狀態下之23℃下之延伸儲藏彈性模數以積層膜整體計可為1GPa以上(例如1GPa~50GPa)之範圍。另外,半導體背面用膜之未硬化狀態下之上述延伸儲藏彈性模數(23℃)可利用樹脂成分(熱塑性樹脂、熱硬化性樹脂)之種類或其含量、二氧化矽填料等填充材料之種類或其含量等來控制。另外,於半導體背面用膜2為複層積層得到之積層膜之情形時(半導體背面用膜具有積層形態之情形時),作為其積層形態,例如可例示包含晶圓接著層與雷射標記層之積層形態等。另外,於此種晶圓接著層與雷射標記層之間,可設置有其他層(中間層、遮光層、增強層、著色層、基材層、電磁波截止層、導熱層、黏著層等)。另外,晶圓接著層係對晶圓發揮優異密接性(接著性)之層,係與晶圓之背面接觸之層。另一方面,雷射標記層係發揮優異之雷射標記性之層,係於對半導體晶片之背面進行雷射標記時所利用之層。
再者,上述延伸儲藏彈性模數係指:不積層於切割帶3而製作未硬化狀態之半導體背面用膜2,使用Rheometrics公司製造之動態黏彈性測定裝置「Solid Analyzer RS A2」,於延伸模式下,以樣品寬度:10mm、樣品長度:22.5mm、樣品厚度:0.2mm,於頻率:1Hz、升溫速度:10℃/分鐘、氮氣氣氛下、特定溫度(23℃)下進行測定所得之延伸儲藏彈性模數之值。
上述半導體背面用膜2較佳為至少一個表面利用隔離體(剝離襯墊)進行保護(未圖示)。例如,於切割帶一體型半導體背面用膜1之情形時,可僅於半導體背面用膜之一個表面設置有隔離體,另一方面,於未與切割帶進行一體化之半導體背面用膜之情形時,可於半導體背
面用膜之單面或雙面設置有隔離體。隔離體具有直至供於實用為止保護半導體背面用膜之作為保護材料之功能。另外,於切割帶一體型半導體背面用膜1之情形時,隔離體亦可用作向切割帶之基材上之黏著劑層32轉印半導體背面用膜2時之支持基材。隔離體於向半導體背面用膜上黏貼半導體晶圓時被剝離。作為隔離體,可使用聚乙烯、聚丙烯、利用氟系剝離劑、長鏈烷基丙烯酸酯系剝離劑等剝離劑進行表面塗佈之塑膠膜(聚對苯二甲酸乙二酯等)、或紙等。其中,隔離體可利用先前公知之方法形成。此外,對隔離體之厚度等亦無特別限制。
半導體背面用膜2未積層於切割帶3時,半導體背面用膜2可以於使用1片雙面具有剝離層之隔離體捲成卷狀之形態下用雙面具有剝離層之隔離體進行保護,亦可用至少一個表面具有剝離層之隔離體進行保護。
此外,對半導體背面用膜2之可見光(波長:400nm~800nm)之透光率(可見光透射率)並無特別限制,例如較佳為20%以下(0%~20%)之範圍,更佳為10%以下(0%~10%),特別較佳為5%以下(0%~5%)。半導體背面用膜2之可見光透射率大於20%時,存在因透光而對半導體元件產生不良影響之虞。此外,上述可見光透射率(%)可根據半導體背面用膜2之樹脂成分之種類、或其含量,著色劑(顏料、染料等)之種類、或其含量,無機填充材料之含量等進行控制。
半導體背面用膜2之可見光透射率(%)可以如下進行測定。即,製作之厚度(平均厚度)20μm之半導體背面用膜2單體。繼而,對半導體背面用膜2以特定強度照射波長:400nm~800nm之可見光線[裝置:島津製作所股份有限公司製造之可見光產生裝置(商品名「ABSORPTION SPECTRO PHOTOMETR」)],測定所透過之可見光線之強度。進而,可根據可見光線透過半導體背面用膜2前後之強度變化求出可見光透射率之值。另外,亦可根據厚度不為20μm之半導
體背面用膜2之可見光透射率(%;波長:400nm~800nm)之值導出厚度:20μm之半導體背面用膜2之可見光透射率(%;波長:400nm~800nm)。此外,本發明雖求出厚度20μm之半導體背面用膜2之情形之可見光透射率(%),但並不代表本發明之半導體背面用膜限於厚度20μm。
此外,作為半導體背面用膜2,較佳為其吸濕率較低。具體而言,上述吸濕率較佳為1重量%以下,更佳為0.8重量%以下。藉由使上述吸濕率為1重量%以下,能夠提高雷射標記性。此外,例如於回流焊步驟中,亦能夠抑制或防止於半導體背面用膜2與半導體元件之間之空隙之產生等。再者,上述吸濕率係根據將半導體背面用膜2於溫度85℃、相對濕度85%RH之氣氛下放置168小時前後之重量變化所算出之值。半導體背面用膜2由含有熱硬化性樹脂之樹脂組合物形成時,上述吸濕率係指對熱硬化後之半導體背面用膜於溫度85℃、相對濕度85%RH之氣氛下放置168小時之後之值。此外,上述吸濕率例如可藉由使無機填料之添加量變化來進行調整。
此外,作為半導體背面用膜2,較佳為揮發成分之比例較少。具體而言,加熱處理後之半導體背面用膜2之失重率(失重量之比率)較佳為1重量%以下,更佳為0.8重量%以下。加熱處理之條件例如為加熱溫度250℃、加熱時間1小時。藉由使上述失重率為1重量%以下,能夠提高雷射標記性。此外,例如於回流焊步驟中,能夠抑制或防止覆晶型之半導體裝置產生裂紋。上述失重率例如可藉由添加能減少無鉛焊料回流焊時之裂紋產生之無機物來進行調整。另外,半導體背面用膜2由含有熱硬化性樹脂之樹脂組合物形成時,上述失重率係指對熱硬化後之半導體背面用膜於加熱溫度250℃、加熱時間1小時之條件下進行加熱時之值。
(切割帶)
上述切割帶3係於基材31上形成黏著劑層32而構成。如此,切割帶3具有積層有基材31及黏著劑層32之構成即可。
(基材)
基材(支持基材)可用作黏著劑層等之支持母體。上述基材31較佳為具有輻射透過性。作為上述基材31,例如可使用紙等紙系基材;布、不織布、氈、網等纖維系基材;金屬箔、金屬板等金屬系基材;塑膠之膜、或片等塑膠系基材;橡膠片等橡膠系基材;發泡片等發泡體、該等之積層體[特別為塑膠系基材與其他基材之積層體、或塑膠膜(或片)彼此之積層體等]等適當之薄層體。本發明中,作為基材,可適當地使用塑膠之膜、或片等塑膠系基材。作為此種塑膠材料之原材料,例如可列舉:聚乙烯(PE)、聚丙烯(PP)、乙烯-丙烯共聚物等烯烴系樹脂;乙烯-乙酸乙烯酯共聚物(EVA)、離聚物樹脂、乙烯-(甲基)丙烯酸共聚物、乙烯-(甲基)丙烯酸酯(無規、交替)共聚物等以乙烯作為單體成分之共聚物;聚對苯二甲酸乙二酯(PET)、聚萘二甲酸乙二酯(PEN)、聚對苯二甲酸丁二酯(PBT)等聚酯;丙烯酸系樹脂;聚氯乙烯(PVC);聚胺基甲酸酯;聚碳酸酯;聚苯硫醚(PPS);聚醯胺(尼龍)、全芳香族聚醯胺(芳綸)等醯胺系樹脂;聚醚醚酮(PEEK);聚醯亞胺;聚醚醯亞胺;聚偏二氯乙烯;ABS(丙烯腈-丁二烯-苯乙烯共聚物);纖維素系樹脂;有機矽樹脂;氟樹脂等。
此外,作為基材31之材料,可列舉上述樹脂之交聯體等聚合物。上述塑膠膜可以無延伸方式使用,亦可根據需要使用實施單軸或雙軸延伸處理之膜。利用藉由延伸處理等而賦予熱收縮性之樹脂片,能夠藉由於切割後使該基材31熱收縮而降低黏著劑層32與半導體背面用膜2之接著面積,實現半導體晶片之回收之容易化。
對於基材31之表面,為了提高與鄰接之層之密接性、保持性等,可實施慣用之表面處理,例如鉻酸處理、臭氧暴露、火焰暴露、
高壓電擊暴露、離子化輻射處理等化學或物理處理,利用底塗劑(例如下述黏著物質)之塗佈處理。
上述基材31可適當選擇使用同一種類或不同種類之材料,可根據需要使用多種材料之共混物。此外,對於基材31,可以為了賦予抗靜電能力而於上述基材31上設置包含金屬、合金、該等之氧化物等之厚度為30~500Å左右之導電性物質之蒸鍍層。基材31可為單層或者2種以上之複層。
對基材31之厚度(為積層體時為指總厚度)並無特別限制,可根據強度、或柔軟性、使用目的等而適當選擇,例如一般而言為1000μm以下(例如1μm~1000μm),較佳為10μm~500μm,進而較佳為20μm~300μm,特別為30μm~200μm左右,但不限於該等。
另外,基材31中可於不損害本發明之效果等之範圍內含有各種添加劑(著色劑、填充劑、可塑劑、防老化劑、抗氧化劑、界面活性劑、阻燃劑等)。
(黏著劑層)
上述黏著劑層32由黏著劑形成,具有黏著性。作為此種黏著劑,並無特別限制,可自公知之黏著劑中適當選擇。具體而言,作為黏著劑,例如可自下述之中適當選擇使用具有上述特性之黏著劑:丙烯酸系黏著劑、橡膠系黏著劑、乙烯基烷基醚系黏著劑、有機矽系黏著劑、聚酯系黏著劑、聚醯胺系黏著劑、胺基甲酸酯系黏著劑、氟系黏著劑、苯乙烯-二烯嵌段共聚物系黏著劑、於該等黏著劑中調配熔點約200℃以下之熱熔融性樹脂之蠕變特性改良型黏著劑等公知之黏著劑(例如參照日本專利特開昭56-61468號公報、日本專利特開昭61-174857號公報、日本專利特開昭63-17981號公報、日本專利特開昭56-13040號公報等)。此外,作為黏著劑,亦可使用輻射硬化型黏著劑(或能量射線硬化型黏著劑)、或熱膨脹性黏著劑。黏著劑可單獨使
用或組合使用2種以上。
作為上述黏著劑,可適宜地使用丙烯酸系黏著劑、橡膠系黏著劑,丙烯酸系黏著劑尤其適宜。作為丙烯酸系黏著劑,可列舉以使用1種或2種以上(甲基)丙烯酸烷基酯作為單體成分之丙烯酸系聚合物(均聚物或共聚物)作為基礎聚合物之丙烯酸系黏著劑。
作為上述丙烯酸系黏著劑中之(甲基)丙烯酸烷基酯,例如可列舉:(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丙酯、(甲基)丙烯酸異丙酯、(甲基)丙烯酸丁酯、(甲基)丙烯酸異丁酯、(甲基)丙烯酸第二丁酯、(甲基)丙烯酸第三丁酯、(甲基)丙烯酸戊酯、(甲基)丙烯酸己酯、(甲基)丙烯酸庚酯、(甲基)丙烯酸辛酯、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸異辛酯、(甲基)丙烯酸壬酯、(甲基)丙烯酸異壬酯、(甲基)丙烯酸癸酯、(甲基)丙烯酸異癸酯、(甲基)丙烯酸十一烷基酯、(甲基)丙烯酸十二烷基酯、(甲基)丙烯酸十三烷基酯、(甲基)丙烯酸十四烷基酯、(甲基)丙烯酸十五烷基酯、(甲基)丙烯酸十六烷基酯、(甲基)丙烯酸十七烷基酯、(甲基)丙烯酸十八烷基酯、(甲基)丙烯酸十九烷基酯、(甲基)丙烯酸二十烷基酯等(甲基)丙烯酸烷基酯等。作為(甲基)丙烯酸烷基酯,適宜為烷基之碳數為4~18之(甲基)丙烯酸烷基酯。其中,(甲基)丙烯酸烷基酯之烷基可為直鏈或支鏈中之任一種。
另外,上述丙烯酸系聚合物可以改善凝聚力、耐熱性、交聯性等而根據需要含有對應於可與上述(甲基)丙烯酸烷基酯共聚之其他單體成分(共聚性單體成分)之單元。作為此種共聚性單體成分,例如可列舉:(甲基)丙烯酸(丙烯酸、甲基丙烯酸)、丙烯酸羧基乙酯、丙烯酸羧基戊酯、衣康酸、馬來酸、富馬酸、巴豆酸等含羧基單體;馬來酸酐、衣康酸酐等含酸酐基單體;(甲基)丙烯酸羥乙酯、(甲基)丙烯酸羥丙酯、(甲基)丙烯酸羥丁酯、(甲基)丙烯酸羥己酯、(甲基)丙烯
酸羥辛酯、(甲基)丙烯酸羥癸酯、(甲基)丙烯酸羥基月桂酯、甲基丙烯酸(4-羥基甲基環己基)甲酯等含羥基單體;苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯醯胺-2-甲基丙磺酸、(甲基)丙烯醯胺丙磺酸、(甲基)丙烯酸磺基丙酯、(甲基)丙烯醯氧基萘磺酸等含磺酸基單體;2-羥乙基丙烯醯基磷酸酯等含磷酸基單體;(甲基)丙烯醯胺、N,N-二甲基(甲基)丙烯醯胺、N-丁基(甲基)丙烯醯胺、N-羥甲基(甲基)丙烯醯胺、N-羥甲基丙烷(甲基)丙烯醯胺等(N-取代)醯胺系單體;(甲基)丙烯酸胺基乙酯、(甲基)丙烯酸N,N-二甲胺基乙酯、(甲基)丙烯酸第三丁基胺基乙酯等(甲基)丙烯酸胺基烷基酯系單體;(甲基)丙烯酸甲氧基乙酯、(甲基)丙烯酸乙氧基乙酯等(甲基)丙烯酸烷氧基烷基酯系單體;丙烯腈、甲基丙烯腈等氰基丙烯酸酯單體;(甲基)丙烯酸縮水甘油酯等含環氧基丙烯酸系單體;苯乙烯、α-甲基苯乙烯等苯乙烯系單體;乙酸乙烯酯、丙酸乙烯酯等乙烯酯系單體;異戊二烯、丁二烯、異丁烯等烯烴系單體;乙烯醚等乙烯醚系單體;N-乙烯基吡咯烷酮、甲基乙烯基吡咯烷酮、乙烯基吡啶、乙烯基哌啶酮、乙烯基嘧啶、乙烯基哌嗪、乙烯基吡嗪、乙烯基吡咯、乙烯基咪唑、乙烯基噁唑、乙烯基嗎啉、N-乙烯基羧酸醯胺類、N-乙烯基己內醯胺等含氮單體;N-環己基馬來醯亞胺、N-異丙基馬來醯亞胺、N-月桂基馬來醯亞胺、N-苯基馬來醯亞胺等馬來醯亞胺系單體;N-甲基衣康醯亞胺、N-乙基衣康醯亞胺、N-丁基衣康醯亞胺、N-辛基衣康醯亞胺、N-2-乙基己基衣康醯亞胺、N-環己基衣康醯亞胺、N-月桂基衣康醯亞胺等衣康醯亞胺系單體;N-(甲基)丙烯醯氧基亞甲基琥珀醯亞胺、N-(甲基)丙烯醯基-6-氧六亞甲基琥珀醯亞胺、N-(甲基)丙烯醯基-8-氧八亞甲基琥珀醯亞胺等琥珀醯亞胺系單體;聚乙二醇(甲基)丙烯酸酯、聚丙二醇(甲基)丙烯酸酯、甲氧基乙二醇(甲基)丙烯酸酯、甲氧基聚丙二醇(甲基)丙烯酸酯等二醇系丙烯酸酯單體;(甲基)丙烯酸四氫糠酯、
氟(甲基)丙烯酸酯、有機矽(甲基)丙烯酸酯等具有雜環、鹵素原子、矽原子等之丙烯酸酯系單體;己二醇二(甲基)丙烯酸酯、(聚)乙二醇二(甲基)丙烯酸酯、(聚)丙二醇二(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、季戊四醇二(甲基)丙烯酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、環氧丙烯酸酯、聚酯丙烯酸酯、胺基甲酸酯丙烯酸酯、二乙烯苯、丁基二(甲基)丙烯酸酯、己基二(甲基)丙烯酸酯等多官能單體等。該等共聚性單體成分可使用1種或2種以上。
作為黏著劑使用輻射硬化型黏著劑(或能量射線硬化型黏著劑)時,作為輻射硬化型黏著劑(組合物),例如可列舉:使用於聚合物側鏈或主鏈中或主鏈末端具有自由基反應性碳-碳雙鍵之聚合物作為基礎聚合物之內在型輻射硬化型黏著劑,或黏著劑中調配有紫外線硬化性之單體成分、或低聚物成分之輻射硬化型黏著劑等。此外,作為黏著劑使用熱膨脹性黏著劑時,作為熱膨脹性黏著劑,例如可列舉含有黏著劑及發泡劑(特別是熱膨脹性微球)之熱膨脹性黏著劑等。
本發明中,黏著劑層32中可於不損害本發明之效果之範圍內含有各種添加劑(例如黏著賦與樹脂、著色劑、增黏劑、增量劑、填充劑、可塑劑、防老化劑、抗氧化劑、界面活性劑、交聯劑等)。
作為上述交聯劑,並無特別限制,可使用公知之交聯劑。具體而言,作為交聯劑,除了異氰酸酯系交聯劑、環氧系交聯劑、三聚氰胺系交聯劑、過氧化物系交聯劑之外,可列舉:尿素系交聯劑、金屬醇鹽系交聯劑、金屬螯合物系交聯劑、金屬鹽系交聯劑、碳二亞胺系交聯劑、噁唑啉系交聯劑、氮丙啶系交聯劑、胺系交聯劑等,適宜為異氰酸酯系交聯劑、或環氧系交聯劑。交聯劑可單獨使用或組合使用2種以上。另外,對交聯劑之使用量並無特別限制。
作為上述異氰酸酯系交聯劑,例如可列舉:1,2-亞乙基二異氰酸
酯、1,4-亞丁基二異氰酸酯、1,6-六亞甲基二異氰酸酯等低級脂肪族聚異氰酸酯類;亞環戊基二異氰酸酯、亞環己基二異氰酸酯、異佛爾酮二異氰酸酯、氫化甲苯二異氰酸酯、氫化二甲苯二異氰酸酯等脂環族聚異氰酸酯類;2,4-甲苯二異氰酸酯、2,6-甲苯二異氰酸酯、4,4'-二苯基甲烷二異氰酸酯、苯二亞甲基二異氰酸酯等芳香族聚異氰酸酯類等,此外可使用:三羥甲基丙烷/甲苯二異氰酸酯三聚體加成物[日本聚胺酯工業股份有限公司製造,商品名「CORONATE L」]、三羥甲基丙烷/六亞甲基二異氰酸酯三聚體加成物[日本聚胺酯工業股份有限公司製造,商品名「CORONATE HL」]等。此外,作為上述環氧系交聯劑,例如可列舉:N,N,N',N'-四縮水甘油基間苯二甲胺、二縮水甘油基苯胺、1,3-雙(N,N-縮水甘油基胺基甲基)環己烷、1,6-己二醇二縮水甘油醚、新戊二醇二縮水甘油醚、乙二醇二縮水甘油醚、丙二醇二縮水甘油醚、聚乙二醇二縮水甘油醚、聚丙二醇二縮水甘油醚、山梨醇聚縮水甘油醚、甘油聚縮水甘油醚、季戊四醇聚縮水甘油醚、聚甘油聚縮水甘油醚、山梨醇酐聚縮水甘油醚、三羥甲基丙烷聚縮水甘油醚、己二酸二縮水甘油酯、鄰苯二甲酸二縮水甘油酯、三(2-羥乙基)異氰脲酸三縮水甘油酯、間苯二酚二縮水甘油醚、雙酚-S-二縮水甘油醚,此外可列舉分子內具有2個以上環氧基之環氧系樹脂等。
另外,本發明中,亦可藉由照射電子束、或紫外線等實施交聯處理來代替使用交聯劑,或者於使用交聯劑之同時藉由照射電子束、或紫外線等實施交聯處理。
黏著劑層32例如可利用下述慣用之方法形成:將黏著劑(感壓接著劑)與視需要而定之溶劑、或其他添加劑等混合,形成片狀之層。具體而言,例如可利用下述方法等形成黏著劑層32:將含有黏著劑及視需要而定之溶劑、或其他添加劑之混合物塗佈於基材31上之方法,於合適之隔離體(剝離紙等)上塗佈上述混合物形成黏著劑層32並將其
轉印(轉移)至基材31上之方法。
黏著劑層32之厚度並無特別限定,例如為5μm以上且200μm以下,較佳為5μm以上且50μm以下,進而較佳為5μm以上且45μm以下,特別較佳為5μm以上且40μm以下。若黏著劑層32之厚度在上述範圍內,則能夠發揮適度之黏著力,充分提高基材與黏著劑層之間之密接性,另外,能夠確保切割時之半導體晶圓之保持力。另外,黏著劑層32可為單層、複層中之任一種。
上述切割帶3之黏著劑層32對於半導體背面用膜2之接著力(23℃、剝離角度為180度、剝離速度為300mm/分鐘)較佳為0.02N/20mm~10N/20mm之範圍,更佳為0.05N/20mm~5N/20mm之範圍。藉由使上述接著力為0.02N/20mm以上,於切割半導體晶圓時能夠防止半導體元件之晶片飛散。另一方面,藉由使上述接著力為10N/20mm以下,於拾取半導體元件時,能夠防止該半導體元件難以剝離或者發生殘膠。
另外,本發明中,可賦予半導體背面用膜2、或切割帶一體型半導體背面用膜1以抗靜電能力。藉此,能夠防止於其接著時及剝離時等之靜電之產生、或防止電路因由此導致之半導體晶圓等帶電而破壞等。抗靜電能力之賦予可以下述方法等適當方式進行:向基材31、黏著劑層32或半導體背面用膜2中添加抗靜電劑、或導電性物質之方法,於基材31上附設包含電荷移動錯合物、或金屬膜等之導電層之方法等。作為該等方式,較佳為不容易產生有使半導體晶圓變質之虞之雜質離子之方式。作為以賦予導電性、提高導熱性等為目的而調配之導電性物質(導電填料),可列舉:銀、鋁、金、銅、鎳、導電性合金等之球狀、針狀、鱗片狀之金屬粉,氧化鋁等金屬氧化物,無定形碳黑、石墨等。但是,上述半導體背面用膜2自能夠製成不漏電之方面而言較佳為非導電性。
另外,半導體背面用膜2、或切割帶一體型半導體背面用膜1可以捲成卷狀之形態形成,亦可以積層有片(膜)之形態形成。例如,具有捲成卷狀之形態時,可將半導體背面用膜2或者半導體背面用膜2與切割帶3之積層體根據需要於利用隔離體進行保護之狀態下捲成卷狀,製成捲成卷狀之狀態或形態之半導體背面用膜2、或切割帶一體型半導體背面用膜1。另外,作為捲成卷狀之狀態或形態之切割帶一體型半導體背面用膜1,可由基材31、於上述基材31之一面形成之黏著劑層32、於上述黏著劑層32上形成之半導體背面用膜、以及於上述基材31之另一面形成之剝離處理層(背面處理層)構成。
另外,作為切割帶一體型半導體背面用膜1之厚度(半導體背面用膜之厚度與包含基材31及黏著劑層32之切割帶之厚度之總厚度),例如可自25μm~1600μm之範圍選擇,較佳為30μm~850μm(進而較佳為35μm~500μm,特別較佳為50μm~330μm)。
另外,於切割帶一體型半導體背面用膜1中,藉由控制半導體背面用膜2之厚度與切割帶3之黏著劑層32之厚度之比、或半導體背面用膜2之厚度與切割帶3之厚度(基材31及黏著劑層32之總厚度)之比,能夠提高切割步驟時之切割性、拾取步驟時之拾取性等,可自半導體晶圓之切割步驟至半導體晶片之覆晶接合步驟有效地利用切割帶一體型半導體背面用膜1。
(切割帶一體型半導體背面用膜之製造方法)
以圖1所示之切割帶一體型半導體背面用膜1為例對本實施形態之切割帶一體型半導體背面用膜之製造方法進行說明。首先,基材31可利用先前公知之成膜方法製膜。作為該成膜方法,例如可例示:壓延成膜法、於有機溶劑中之流延法、於密閉體系中之吹脹擠出法、T模擠出法、共擠出法、乾層壓法等。
繼而,於基材31上塗佈黏著劑組合物,並進行乾燥(根據需要進
行加熱交聯),形成黏著劑層32。作為塗佈方式,可列舉輥塗覆、絲網塗覆、凹版塗覆等。另外,可將黏著劑層組合物直接塗佈於基材31於基材31上形成黏著劑層32,亦可於將黏著劑組合物塗佈於表面進行剝離處理之剝離紙等而形成黏著劑層32之後將該黏著劑層32轉印至基材31。藉此製作於基材31上形成有黏著劑層32之切割帶3。
另一方面,將用於形成半導體背面用膜2之形成材料塗佈於剝離紙上使得乾燥後之厚度為特定厚度,進而於特定條件下乾燥(需要熱硬化時等,根據需要實施加熱處理進行乾燥),形成塗佈層。藉由將該塗佈層轉印至上述黏著劑層32上,於黏著劑層32上形成半導體背面用膜2。再者,藉由於上述黏著劑層32上直接塗佈用於形成半導體背面用膜2之形成材料之後,於特定條件下乾燥(於需要熱硬化時等,根據需要實施加熱處理進行乾燥),亦可於黏著劑層32上形成半導體背面用膜2。根據以上可獲得本發明之切割帶一體型半導體背面用膜1。另外,於形成半導體背面用膜2時進行熱硬化之情形時,重要為以達到部分硬化之狀態之程度進行熱硬化,但較佳為不進行熱硬化。
本發明之切割帶一體型半導體背面用膜1可於具備覆晶接合步驟之半導體裝置之製造時適宜地使用。即,本發明之切割帶一體型半導體背面用膜1於製造覆晶安裝之半導體裝置時使用,於半導體晶片之背面黏貼有切割帶一體型半導體背面用膜1之半導體背面用膜2之狀態或形態下製造覆晶安裝之半導體裝置。因此,本發明之切割帶一體型半導體背面用膜1可用於覆晶安裝之半導體裝置(半導體晶片以覆晶接合方式固定於基板等被接著體之狀態或形態之半導體裝置)。
另外,與切割帶一體型半導體背面用膜1同樣地,半導體背面用膜2可用於覆晶安裝之半導體裝置(半導體晶片利用覆晶接合方式而固定於基板等被接著體之狀態或形態之半導體裝置)。
(半導體晶圓)
作為半導體晶圓,只要為公知或慣用之半導體晶圓則無特別限制,可自各種原材料之半導體晶圓中適當選擇並使用。本發明中,作為半導體晶圓,可適宜地使用矽晶圓。
(半導體裝置之製造方法)
以下參照圖2A~圖2D對本實施形態之半導體裝置之製造方法進行說明。圖2A~圖2D係分別示出使用上述切割帶一體型半導體背面用膜1時之半導體裝置之製造方法之一個步驟之截面示意圖。
上述半導體裝置之製造方法可使用上述切割帶一體型半導體背面用膜1製造半導體裝置。具體而言,至少具備以下步驟:於上述切割帶一體型半導體背面用膜之半導體背面用膜上黏貼半導體晶圓之步驟;將切入深度設定為超過上述黏著劑層之上述半導體背面用膜側之面且未到達上述基材側之面之範圍而對上述半導體晶圓進行切割,從而形成半導體晶片之步驟;將上述半導體晶片與上述半導體背面用膜一起自切割帶之黏著劑層剝離之步驟;以及將上述半導體晶片覆晶接合於上述被接著體上之步驟。
[安裝步驟]
首先,如圖2A所示,將任意設置於切割帶一體型半導體背面用膜1之半導體背面用膜2上之隔離體適宜地剝離,於該半導體背面用膜2上黏貼半導體晶圓4,將其接著保持進行固定(安裝步驟)。此時,上述半導體背面用膜2處於未硬化狀態(包括半硬化狀態)。此外,切割帶一體型半導體背面用膜1黏貼於半導體晶圓4之背面。半導體晶圓4之背面係指與電路面相反側之面(亦稱為非電路面、非電極形成面等)。對黏貼方法並無特別限定,較佳為利用壓接之方法。壓接通常利用壓接輥等按壓單元一面按壓一面進行。
[切割步驟」
繼而,如圖2B所示,進行半導體晶圓4之切割。藉此,將半導體
晶圓4切割成特定尺寸進行單片化(小片化),製造半導體晶片5。切割例如自半導體晶圓4之電路面側按照常規方法進行。此外,本步驟可採用例如切入至切割帶一體型半導體背面用膜1之被稱為全切之切斷方式等。作為本步驟中使用之切割裝置,並無特別限定,可使用先前公知之裝置。此外,半導體晶圓4由於利用具有半導體背面用膜之切割帶一體型半導體背面用膜1以優異之密接性進行接著固定,因此能夠抑制晶片缺損、或晶片飛濺,並且亦能夠抑制半導體晶圓4之破損。另外,半導體背面用膜2由包含環氧樹脂之樹脂組合物形成時,即便因切割而被切斷,亦能夠抑制或防止其切斷面露出半導體背面用膜之接著劑層之膠糊。其結果,能夠抑制或防止切斷面彼此發生再附著(黏連),能夠更良好地進行下述之拾取。
另外,進行切割帶一體型半導體背面用膜1之擴晶(expand)時,該擴晶可使用先前公知之擴晶裝置進行。擴晶裝置具有:可經由切割環將切割帶一體型半導體背面用膜1向下方壓下之甜甜圈狀之外環、以及直徑比外環小之支持切割帶一體型半導體背面用膜之內環。藉由該擴晶步驟,於下述之拾取步驟中,能夠防止相鄰之半導體晶片之間接觸而發生破損。
[拾取步驟]
為了回收接著固定於切割帶一體型半導體背面用膜1之半導體晶片5,如圖2C所示,進行半導體晶片5之拾取,將半導體晶片5與半導體背面用膜2一起自切割帶3剝離。作為拾取之方法,並無特別限定,可採用先前公知之各種方法。例如可列舉如下方法等:利用針形件自切割帶一體型半導體背面用膜1之基材31側將各個半導體晶片5頂起,用拾取裝置拾取被頂起之半導體晶片5。再者,被拾取之半導體晶片5之背面被半導體背面用膜2保護。
[覆晶連接步驟]
所拾取之半導體晶片5如圖2D所示,利用覆晶接合方式(覆晶安裝方式)固定於基板等被接著體。具體而言,按照常規方法將半導體晶片5以半導體晶片5之電路面(亦稱為表面、電路圖案形成面、電極形成面等)與被接著體6對向之形態固定於被接著體6。例如,藉由使於半導體晶片5之電路面側形成之凸塊51與黏附於被接著體6之連接焊盤上之接合用之導電材料(焊料等)61接觸一面按壓一面使導電材料熔融,能夠確保半導體晶片5與被接著體6之電導通,將半導體晶片5固定於被接著體6(覆晶接合步驟)。此時,於半導體晶片5與被接著體6之間形成有空隙,其空隙間距一般而言為30μm~300μm左右。再者,將半導體晶片5覆晶接合(flip-chip bonding)於被接著體6上之後,重要為洗淨半導體晶片5與被接著體6之對向面、或間隙,向該間隙中填充封裝材料(封裝樹脂等)進行封裝。
作為被接著體6,可使用引線框、或電路基板(配線電路基板等)等各種基板。作為此種基板之材質,並無特別限定,可列舉陶瓷基板、或塑膠基板。作為塑膠基板,例如可列舉環氧基板、雙馬來醯亞胺三嗪基板、聚醯亞胺基板等。
於覆晶接合步驟中,作為凸塊、或導電材料之材質,並無特別限定,例如可列舉錫-鉛系金屬材料、錫-銀系金屬材料、錫-銀-銅系金屬材料、錫-鋅系金屬材料、錫-鋅-鉍系金屬材料等焊料類(合金)、或金系金屬材料、銅系金屬材料等。
另外,於覆晶接合步驟中,使導電材料熔融來使半導體晶片5之電路面側之凸塊與被接著體6之表面之導電材料連接,作為該導電材料之熔融時之溫度,通常為260℃左右(例如250℃~300℃)。本發明之切割帶一體型半導體背面用膜藉由利用環氧樹脂等形成半導體背面用膜,可製成具有連該覆晶接合步驟中之高溫亦能夠耐受之耐熱性之膜。
本步驟較佳為進行半導體晶片5與被接著體6之對向面(電極形成面)、或間隙之洗淨。作為該洗滌中使用之洗淨液,並無特別限制,例如可列舉有機系之洗淨液、或水系之洗淨液。本發明之切割帶一體型半導體背面用膜中之半導體背面用膜具有對洗淨液之耐溶劑性,對於該等洗淨液實質上不具有溶解性。因此,如上所述,作為洗淨液,可使用各種洗淨液,不需要特別之洗淨液,可利用先前之方法進行洗淨。
進而,進行用於將覆晶接合之半導體晶片5與被接著體6之間之間隙封裝之封裝步驟。封裝步驟使用封裝樹脂進行。作為此時之封裝條件,並無特別限定,通常藉由於175℃下進行60秒~90秒之加熱進行封裝樹脂之熱硬化,但本發明不限於此,例如可於165℃~185℃下硬化數分鐘。於該步驟之熱處理中,不僅為封裝樹脂,亦可同時進行半導體背面用膜2之熱硬化。由此,封裝樹脂及半導體背面用膜2雙方隨著熱硬化之推進而發生硬化收縮。其結果,因封裝樹脂之硬化收縮而施加於半導體晶片5之應力能夠因半導體背面用膜2之硬化收縮而抵消或緩和。另外,藉由該步驟,能夠使半導體背面用膜2完全或基本完全地熱硬化,能夠以優異之密接性黏貼於半導體元件之背面。進而,本發明之半導體背面用膜2即便於未硬化狀態下進行該封裝步驟時,亦能夠與封裝材料一起熱硬化,因此無需重新追加用於使半導體背面用膜2發生熱硬化之步驟。
作為上述封裝樹脂,只要為具有絕緣性之樹脂(絕緣樹脂)則無特別限制,可自公知之封裝樹脂等封裝材料中適當選擇並使用,更佳為具有彈性之絕緣樹脂。作為封裝樹脂,例如可列舉含有環氧樹脂之樹脂組合物等。作為環氧樹脂,可列舉上述例示之環氧樹脂等。此外,作為基於含有環氧樹脂之樹脂組合物之封裝樹脂,作為樹脂成分,除了環氧樹脂之外,可含有環氧樹脂以外之熱硬化性樹脂(酚醛樹脂等)、或熱塑性樹脂等。其中,作為酚醛樹脂,亦可作為環氧樹脂之
硬化劑進行利用,作為此種酚醛樹脂,可列舉上述例示之酚醛樹脂等。
使用上述切割帶一體型半導體背面用膜1、或半導體背面用膜2製造之半導體裝置(覆晶安裝之半導體裝置)由於在半導體晶片之背面黏貼有半導體背面用膜,因此能夠以優異之視覺識別性來施加各種標記。尤其是,即便標記方法為雷射標記方法,亦能夠以優異之對比度來施加標記,能夠良好地目視確認藉由雷射標記施加之各種資訊(文字資訊、圖研資訊等)。另外,進行雷射標記時,可利用公知之雷射標記裝置。另外,作為雷射,可利用氣體雷射、固體雷射、液體雷射等各種雷射。具體而言,作為氣體雷射,並無特別限定,可利用公知之氣體雷射,適合為二氧化碳雷射(CO2雷射)、準分子雷射(ArF雷射、KrF雷射、XeCl雷射、XeF雷射等)。另外,作為固體雷射,並無特別限定,可利用公知之固體雷射,適合為YAG雷射(Nd:YAG雷射等)、YVO4雷射。
使用本發明之切割帶一體型半導體背面用膜、或半導體背面用膜所製造之半導體裝置由於係以覆晶安裝方式安裝之半導體裝置,因此成為比以晶片接合安裝方式安裝之半導體裝置薄型化、小型化之形狀。由此,可適宜地用作各種電子設備/電子零件或該等之材料/構件。具體而言,作為本發明之覆晶安裝之半導體裝置所利用之電子設備,可列舉:所謂之「手機」、或「PHS」、小型電腦(例如所謂之「PDA」(攜帶資訊終端)、所謂之「筆記本電腦」、所謂之「上網本(NETBOOK,商標)」、所謂之「可穿戴式電腦」等)、「手機」與電腦一體化之小型電子設備、所謂之「數碼相機(DIGITAL CAMERA,商標)」、所謂之「數碼攝像機」、小型電視機、小型遊戲機、小型數字音頻播放器、所謂之「電子記事本」、所謂之「電子辭典」、所謂之「電子書」用電子設備終端、小型數碼型鐘錶等便攜型電子設備(可
攜帶之電子設備)等,當然亦可為便攜型以外(設置型等)之電子設備(例如所謂之「台式電腦」、薄型電視機、錄像/播放用電子設備(硬碟錄像機、DVD播放器等)、投影儀、微型機械等)等。此外,作為電子零件或電子設備/電子零件之材料/構件,例如可列舉所謂之「CPU」之構件、各種記憶裝置(所謂之「記憶體」、硬碟等)之構件等。
實施例
以下,使用實施例來詳細說明本發明,但本發明於不超過其主旨之範圍內,不限定於以下之實施例。另外,各例中,份於無特別記載之情況下均為重量基準。
(實施例1)
相對於以丙烯酸乙酯-甲基丙烯酸甲酯作為主要成分之丙烯酸酯系聚合物(商品名「Teisanresin SG-P3」,Nagase ChemteX Corporation製造)100份,將環氧樹脂(商品名「HP-4700」,DIC CORPORATION製造)53份、苯酚樹脂(商品名「MEH-7851H」,明和化成股份有限公司製造)69份、球狀二氧化矽(商品名「SE-2050-MCV」,Admatechs股份有限公司製造)153份、著色劑(商品名「ORIPAS B-35」,Orient Chemical Industries公司製造)7份溶解於甲基乙基酮中,調配成固體成分濃度達到22重量%之接著劑組合物之溶液。
將該接著劑組合物之溶液塗佈於作為剝離襯墊(隔離體)之經有機矽脫模處理之厚度為50μm之包含聚對苯二甲酸乙二酯膜之脫模處理膜上,然後於130℃下乾燥2分鐘,藉此製作厚度25μm之半導體背面用膜。
(實施例2)
相對於以丙烯酸乙酯-甲基丙烯酸甲酯作為主要成分之丙烯酸酯系聚合物(商品名「Teisanresin SG-P3」,Nagase ChemteX Corporation製造)100份,將環氧樹脂(商品名「HP-4700」,DIC CORPORATION製
造)9份、苯酚樹脂(商品名「MEH-7851H」,明和化成股份有限公司製造)12份、球狀二氧化矽(商品名「SE-2050-MCV」,Admatechs股份有限公司製造)69份、著色劑(商品名「ORIPAS B-35」,Orient Chemical Industries股份有限公司製造)7份溶解於甲基乙基酮中,從而調配成固體成分濃度達到22重量%之接著劑組合物之溶液。
將該接著劑組合物之溶液塗佈於作為剝離襯墊(隔離體)之經有機矽脫模處理之厚度為50μm之包含聚對苯二甲酸乙二酯膜之脫模處理膜上,然後於130℃下乾燥2分鐘,藉此製作厚度25μm之半導體背面用膜。
(實施例3)
相對於以丙烯酸乙酯-甲基丙烯酸甲酯作為主要成分之丙烯酸酯系聚合物(商品名「Teisanresin SG-P3」,Nagase ChemteX Corporation製造)100份,將球狀二氧化矽(商品名「SE-2050-MCV」,Admatechs股份有限公司製造)153份、著色劑(商品名「ORIPAS B-35」,Orient Chemical Industries股份有限公司製造)7份溶解於甲基乙基酮中,從而調配成固體成分濃度達到22重量%之接著劑組合物之溶液。
將該接著劑組合物之溶液塗佈於作為剝離襯墊(隔離體)之經有機矽脫模處理之厚度為50μm之包含聚對苯二甲酸乙二酯膜之脫模處理膜上,然後於130℃下乾燥2分鐘,藉此製作厚度25μm之半導體背面用膜。
(比較例1)
相對於以丙烯酸乙酯-甲基丙烯酸甲酯作為主要成分之丙烯酸酯系聚合物(商品名「Teisanresin SG-P3」,Nagase ChemteX Corporation製造)100份,將著色劑(商品名「ORIPAS B-35」,Orient Chemical Industries股份有限公司製造)7份溶解於甲基乙基酮中,從而調配成固體成分濃度達到22重量%之接著劑組合物之溶液。
將該接著劑組合物之溶液塗佈於作為剝離襯墊(隔離體)之經有機矽脫模處理之厚度為50μm之包含聚對苯二甲酸乙二酯膜之脫模處理膜上,然後於130℃下乾燥2分鐘,藉此製作厚度25μm之半導體背面用膜。
(比較例2)
相對於以丙烯酸乙酯-甲基丙烯酸甲酯作為主要成分之丙烯酸酯系聚合物(商品名「Teisanresin SG-P3」,Nagase ChemteX Corporation製造)100份,將環氧樹脂(商品名「HP-4700」,DIC CORPORATION製造)109份、苯酚樹脂(商品名「MEH-7851H」,明和化成股份有限公司製造)141份、球狀二氧化矽(商品名「SE-2050-MCV」,Admatechs股份有限公司製造)120份、著色劑(商品名「ORIPAS B-35」,Orient Chemical Industries股份有限公司製造)7份溶解於甲基乙基酮中,從而調配成固體成分濃度達到22重量%之接著劑組合物之溶液。
將該接著劑組合物之溶液塗佈於作為剝離襯墊(隔離體)之經有機矽脫模處理之厚度為50μm之包含聚對苯二甲酸乙二酯膜之脫模處理膜上,然後於130℃下乾燥2分鐘,藉此製作厚度25μm之半導體背面用膜。
(評價)
針對實施例1~3及比較例1及2中製作之半導體背面用膜,進行以下之評價。將結果示於表1。
<半導體背面用膜對於半導體晶圓之接著力之測定>
將作為半導體晶圓之矽晶圓置於熱板上,於特定之溫度(50℃)下,將2kg之輥往復一次來黏貼用黏著帶(商品名「BT315」,日東電工股份有限公司製造)進行背面增強之長度150mm、寬度10mm之半導體背面用膜。其後,於熱板上(50℃)靜置2分鐘後,於常溫(23℃左右)下靜置20分鐘,放置後,使用剝離試驗機(商品名「AUTOGRAPH
AGS-J」,島津製作所製造),於溫度70℃之條件下,於剝離角度:180°、延伸速度:300mm/分鐘之條件下,剝掉經背面增強之半導體背面用膜(於半導體背面用膜與半導體晶圓之界面處進行剝離),測定該剝離時之載荷之最大載荷(除測定初始之峰值以外之載荷之最大值),將該最大載荷作為半導體背面用膜對於半導體晶圓之接著力(N/10mm寬度)而求出。
<斷裂伸長率之測定>
使用輥層壓機(裝置名「MRK-600」,MCK Corporation製造),積層於70℃、0.2MPa下製作之半導體背面用膜,從而獲得厚度100μm之測定用半導體背面用膜。將測定用半導體背面用膜切斷成寬度10mm×長度30mm而製成試驗片後,作為延伸試驗機使用「AUTOGRAPH ASG-50D型」(島津製作所製造),於延伸速度50mm/分鐘、卡盤間距離10mm、25℃下進行延伸試驗。求出試驗片斷裂時之卡盤間距離與試驗前之卡盤間距離之比,作為斷裂伸長率(%)。
<膨潤度之測定方法>
自半導體背面用膜取樣約0.1g並精密稱量(試樣之重量),將該樣
品用網狀片包裹後,於室溫下於約50ml乙醇中浸漬1星期。其後,將
溶劑不溶成分(網狀片之內容物)自乙醇中取出,於室溫下風乾至重量變
化達到1%以下為止。稱量此時之風乾後之溶劑不溶成分(浸漬/風乾後
之重量W1)。其後,以130℃加熱乾燥約2小時,稱量乾燥後之溶劑不溶
成分(浸漬/加熱乾燥後之重量W2),由下述式(a)算出膨潤度(重量%)。
膨潤度(重量%)=[(W1-W2)/W2]×100‧‧‧(a)
<剝離性(再加工性)之評價方法>
對半導體晶圓(直徑8英吋、厚度0.6mm;矽鏡面晶圓)進行背面研磨處理,將厚度0.2mm之鏡面晶圓用作工件。於半導體背面用膜上以70℃進行輥壓接來黏貼鏡面晶圓(工件)。放熱至室溫後,將半導體
背面用膜自其端部利用黏著帶BT-315(日東電工股份有限公司製造)剝離,能夠直接剝離而不會發生斷裂且不會於晶圓上產生殘渣、或者即便產生殘渣亦能夠用乙醇完全去除時評價為「○」;半導體背面用膜發生斷裂、或晶圓上產生殘渣時評價為「×」。
根據表1,實施例1~3之半導體背面用膜之剝離性(再加工性)良好。另一方面,比較例1及2之斷裂伸長率或接著力過高,因此剝離性較差。
2‧‧‧半導體背面用膜
5‧‧‧半導體晶片
6‧‧‧被接著體
51‧‧‧形成於半導體晶片5之電路面側之凸塊
61‧‧‧黏附於被接著體6之連接焊盤上之接合用之導電材料
Claims (6)
- 一種半導體背面用膜,其於熱硬化前於70℃下對於晶圓之接著力為7N/10mm以下,25℃下之斷裂伸長率為700%以下。
- 如請求項1之半導體背面用膜,其中基於乙醇之膨潤度為1重量%以上。
- 如請求項1或2之半導體背面用膜,其包含丙烯酸系樹脂。
- 如請求項3之半導體背面用膜,其中相對於上述丙烯酸系樹脂100重量份,包含50~200重量份之無機填充劑。
- 一種切割帶一體型半導體背面用膜,其具備:依次積層有基材及黏著劑層之切割帶、以及於該切割帶之黏著劑層上積層之如請求項1至4中任一項之半導體背面用膜。
- 一種半導體裝置之製造方法,其係使用如請求項5之切割帶一體型半導體背面用膜而製造半導體裝置之方法,且包括以下步驟:於上述切割帶一體型半導體背面用膜之半導體背面用膜上黏貼半導體晶圓之步驟;將切入深度設定為超過上述黏著劑層之上述半導體背面用膜側之面且未到達上述基材側之面之範圍而對上述半導體晶圓進行切割,從而形成半導體晶片之步驟;將上述半導體晶片與上述半導體背面用膜一起自切割帶之黏著劑層剝離之步驟;以及將上述半導體晶片覆晶連接於被接著體上之步驟。
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CN (1) | CN106206375B (zh) |
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TWI820080B (zh) * | 2018-01-30 | 2023-11-01 | 日商日東電工股份有限公司 | 半導體背面密接膜及切晶帶一體型半導體背面密接膜 |
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JP6956313B2 (ja) * | 2017-07-27 | 2021-11-02 | パナソニックIpマネジメント株式会社 | 半導体装置の製造方法 |
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JP7033004B2 (ja) * | 2018-05-24 | 2022-03-09 | 日東電工株式会社 | ダイシングダイボンドフィルムおよび半導体装置製造方法 |
JP7160739B2 (ja) * | 2019-03-25 | 2022-10-25 | 日東電工株式会社 | ダイシングテープ一体型半導体背面密着フィルム |
US10991621B2 (en) | 2019-08-05 | 2021-04-27 | Texas Instruments Incorporated | Semiconductor die singulation |
JP2021082768A (ja) | 2019-11-21 | 2021-05-27 | リンテック株式会社 | キット、及び、そのキットを用いる第三積層体の製造方法 |
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JP2022092286A (ja) | 2020-12-10 | 2022-06-22 | リンテック株式会社 | 保護膜付きワークの製造方法及び保護膜形成フィルム付きワークの製造方法 |
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- 2016-05-31 KR KR1020160067228A patent/KR102479621B1/ko active IP Right Grant
- 2016-06-01 CN CN201610382308.6A patent/CN106206375B/zh active Active
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Cited By (1)
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TWI820080B (zh) * | 2018-01-30 | 2023-11-01 | 日商日東電工股份有限公司 | 半導體背面密接膜及切晶帶一體型半導體背面密接膜 |
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CN106206375A (zh) | 2016-12-07 |
JP6530242B2 (ja) | 2019-06-12 |
KR102479621B1 (ko) | 2022-12-20 |
TWI783911B (zh) | 2022-11-21 |
US20160351432A1 (en) | 2016-12-01 |
KR20160141664A (ko) | 2016-12-09 |
JP2016225496A (ja) | 2016-12-28 |
US9768050B2 (en) | 2017-09-19 |
CN106206375B (zh) | 2021-07-02 |
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