JP2014123589A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP2014123589A JP2014123589A JP2012277573A JP2012277573A JP2014123589A JP 2014123589 A JP2014123589 A JP 2014123589A JP 2012277573 A JP2012277573 A JP 2012277573A JP 2012277573 A JP2012277573 A JP 2012277573A JP 2014123589 A JP2014123589 A JP 2014123589A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 239000004065 semiconductor Substances 0.000 title claims description 17
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 139
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 69
- 229910052751 metal Inorganic materials 0.000 claims abstract description 56
- 239000002184 metal Substances 0.000 claims abstract description 56
- 239000000758 substrate Substances 0.000 claims abstract description 51
- 239000010936 titanium Substances 0.000 claims abstract description 34
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 33
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 22
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 10
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 9
- 230000001678 irradiating effect Effects 0.000 claims abstract description 4
- 230000008018 melting Effects 0.000 claims description 13
- 238000002844 melting Methods 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 abstract description 4
- 238000004088 simulation Methods 0.000 description 22
- 238000000137 annealing Methods 0.000 description 16
- 238000005224 laser annealing Methods 0.000 description 11
- 238000004151 rapid thermal annealing Methods 0.000 description 6
- 230000007423 decrease Effects 0.000 description 3
- 229910021334 nickel silicide Inorganic materials 0.000 description 3
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/048—Making electrodes
- H01L21/0485—Ohmic electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/66196—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices with an active layer made of a group 13/15 material
- H01L29/66204—Diodes
- H01L29/66212—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012277573A JP2014123589A (ja) | 2012-12-20 | 2012-12-20 | 半導体装置の製造方法 |
PCT/JP2013/077551 WO2014097714A1 (ja) | 2012-12-20 | 2013-10-10 | 半導体装置の製造方法 |
TW102137488A TW201426828A (zh) | 2012-12-20 | 2013-10-17 | 半導體裝置之製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012277573A JP2014123589A (ja) | 2012-12-20 | 2012-12-20 | 半導体装置の製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2014123589A true JP2014123589A (ja) | 2014-07-03 |
Family
ID=50978064
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012277573A Pending JP2014123589A (ja) | 2012-12-20 | 2012-12-20 | 半導体装置の製造方法 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP2014123589A (zh) |
TW (1) | TW201426828A (zh) |
WO (1) | WO2014097714A1 (zh) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015513218A (ja) * | 2012-03-05 | 2015-04-30 | アーベーベー・テクノロジー・アーゲー | パワー半導体装置およびその製造方法 |
WO2016031312A1 (ja) * | 2014-08-26 | 2016-03-03 | 住友重機械工業株式会社 | 半導体素子の製造方法 |
JP2016046448A (ja) * | 2014-08-26 | 2016-04-04 | 住友重機械工業株式会社 | 半導体素子の製造方法 |
JP2016046310A (ja) * | 2014-08-20 | 2016-04-04 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
JP2016127157A (ja) * | 2015-01-05 | 2016-07-11 | 住友重機械工業株式会社 | レーザアニール装置及び半導体素子の製造方法 |
JP2017130550A (ja) * | 2016-01-20 | 2017-07-27 | 国立大学法人広島大学 | 炭化珪素半導体装置及びその製造方法 |
JP2017224694A (ja) * | 2016-06-15 | 2017-12-21 | 三菱電機株式会社 | 炭化珪素半導体装置およびその製造方法 |
JP2018503248A (ja) * | 2014-12-08 | 2018-02-01 | アーベーベー・シュバイツ・アーゲー | ワイドバンドギャップジャンクションバリアショットキーダイオードの製造方法。 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7428481B2 (ja) * | 2019-06-07 | 2024-02-06 | 住友重機械工業株式会社 | レーザアニール方法及びレーザ制御装置 |
CN113345806B (zh) * | 2021-04-23 | 2024-03-05 | 北京华卓精科科技股份有限公司 | 一种SiC基半导体的激光退火方法 |
CN113851374A (zh) * | 2021-11-05 | 2021-12-28 | 南京航空航天大学 | 提高半导体材料放电加工效率的进电端表面预处理方法 |
CN114414747B (zh) * | 2022-03-14 | 2022-08-12 | 中芯越州集成电路制造(绍兴)有限公司 | 激光退火均匀性的验证方法 |
CN117438297B (zh) * | 2023-12-18 | 2024-02-27 | 合肥晶合集成电路股份有限公司 | 一种半导体器件及其制备方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08264468A (ja) * | 1994-09-12 | 1996-10-11 | Ion Kogaku Kenkyusho:Kk | 炭化ケイ素への不純物ドーピング方法および電極形成方法 |
JP3184115B2 (ja) * | 1997-04-11 | 2001-07-09 | 松下電器産業株式会社 | オーミック電極形成方法 |
US20050104072A1 (en) * | 2003-08-14 | 2005-05-19 | Slater David B.Jr. | Localized annealing of metal-silicon carbide ohmic contacts and devices so formed |
JP5436231B2 (ja) * | 2009-01-16 | 2014-03-05 | 昭和電工株式会社 | 半導体素子の製造方法及び半導体素子、並びに半導体装置 |
JP2012069798A (ja) * | 2010-09-24 | 2012-04-05 | Toyota Motor Corp | 半導体装置の製造方法 |
JP5418466B2 (ja) * | 2010-11-01 | 2014-02-19 | 住友電気工業株式会社 | 半導体装置およびその製造方法 |
JP2012156390A (ja) * | 2011-01-27 | 2012-08-16 | Sumitomo Heavy Ind Ltd | レーザアニール方法及びレーザアニール装置 |
-
2012
- 2012-12-20 JP JP2012277573A patent/JP2014123589A/ja active Pending
-
2013
- 2013-10-10 WO PCT/JP2013/077551 patent/WO2014097714A1/ja active Application Filing
- 2013-10-17 TW TW102137488A patent/TW201426828A/zh unknown
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015513218A (ja) * | 2012-03-05 | 2015-04-30 | アーベーベー・テクノロジー・アーゲー | パワー半導体装置およびその製造方法 |
JP2016046310A (ja) * | 2014-08-20 | 2016-04-04 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
WO2016031312A1 (ja) * | 2014-08-26 | 2016-03-03 | 住友重機械工業株式会社 | 半導体素子の製造方法 |
JP2016046448A (ja) * | 2014-08-26 | 2016-04-04 | 住友重機械工業株式会社 | 半導体素子の製造方法 |
JP2016046449A (ja) * | 2014-08-26 | 2016-04-04 | 住友重機械工業株式会社 | 半導体素子の製造方法 |
JP2018503248A (ja) * | 2014-12-08 | 2018-02-01 | アーベーベー・シュバイツ・アーゲー | ワイドバンドギャップジャンクションバリアショットキーダイオードの製造方法。 |
JP2016127157A (ja) * | 2015-01-05 | 2016-07-11 | 住友重機械工業株式会社 | レーザアニール装置及び半導体素子の製造方法 |
JP2017130550A (ja) * | 2016-01-20 | 2017-07-27 | 国立大学法人広島大学 | 炭化珪素半導体装置及びその製造方法 |
JP2017224694A (ja) * | 2016-06-15 | 2017-12-21 | 三菱電機株式会社 | 炭化珪素半導体装置およびその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2014097714A1 (ja) | 2014-06-26 |
TW201426828A (zh) | 2014-07-01 |
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