JP2014123589A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

Info

Publication number
JP2014123589A
JP2014123589A JP2012277573A JP2012277573A JP2014123589A JP 2014123589 A JP2014123589 A JP 2014123589A JP 2012277573 A JP2012277573 A JP 2012277573A JP 2012277573 A JP2012277573 A JP 2012277573A JP 2014123589 A JP2014123589 A JP 2014123589A
Authority
JP
Japan
Prior art keywords
film
substrate
metal film
interface
laser beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2012277573A
Other languages
English (en)
Japanese (ja)
Inventor
Teruhisa Kawasaki
輝尚 川▲崎▼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Heavy Industries Ltd
Original Assignee
Sumitomo Heavy Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Heavy Industries Ltd filed Critical Sumitomo Heavy Industries Ltd
Priority to JP2012277573A priority Critical patent/JP2014123589A/ja
Priority to PCT/JP2013/077551 priority patent/WO2014097714A1/ja
Priority to TW102137488A priority patent/TW201426828A/zh
Publication of JP2014123589A publication Critical patent/JP2014123589A/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/048—Making electrodes
    • H01L21/0485—Ohmic electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/66196—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices with an active layer made of a group 13/15 material
    • H01L29/66204—Diodes
    • H01L29/66212—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2012277573A 2012-12-20 2012-12-20 半導体装置の製造方法 Pending JP2014123589A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2012277573A JP2014123589A (ja) 2012-12-20 2012-12-20 半導体装置の製造方法
PCT/JP2013/077551 WO2014097714A1 (ja) 2012-12-20 2013-10-10 半導体装置の製造方法
TW102137488A TW201426828A (zh) 2012-12-20 2013-10-17 半導體裝置之製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012277573A JP2014123589A (ja) 2012-12-20 2012-12-20 半導体装置の製造方法

Publications (1)

Publication Number Publication Date
JP2014123589A true JP2014123589A (ja) 2014-07-03

Family

ID=50978064

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012277573A Pending JP2014123589A (ja) 2012-12-20 2012-12-20 半導体装置の製造方法

Country Status (3)

Country Link
JP (1) JP2014123589A (zh)
TW (1) TW201426828A (zh)
WO (1) WO2014097714A1 (zh)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015513218A (ja) * 2012-03-05 2015-04-30 アーベーベー・テクノロジー・アーゲー パワー半導体装置およびその製造方法
WO2016031312A1 (ja) * 2014-08-26 2016-03-03 住友重機械工業株式会社 半導体素子の製造方法
JP2016046448A (ja) * 2014-08-26 2016-04-04 住友重機械工業株式会社 半導体素子の製造方法
JP2016046310A (ja) * 2014-08-20 2016-04-04 住友電気工業株式会社 炭化珪素半導体装置の製造方法
JP2016127157A (ja) * 2015-01-05 2016-07-11 住友重機械工業株式会社 レーザアニール装置及び半導体素子の製造方法
JP2017130550A (ja) * 2016-01-20 2017-07-27 国立大学法人広島大学 炭化珪素半導体装置及びその製造方法
JP2017224694A (ja) * 2016-06-15 2017-12-21 三菱電機株式会社 炭化珪素半導体装置およびその製造方法
JP2018503248A (ja) * 2014-12-08 2018-02-01 アーベーベー・シュバイツ・アーゲー ワイドバンドギャップジャンクションバリアショットキーダイオードの製造方法。

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7428481B2 (ja) * 2019-06-07 2024-02-06 住友重機械工業株式会社 レーザアニール方法及びレーザ制御装置
CN113345806B (zh) * 2021-04-23 2024-03-05 北京华卓精科科技股份有限公司 一种SiC基半导体的激光退火方法
CN113851374A (zh) * 2021-11-05 2021-12-28 南京航空航天大学 提高半导体材料放电加工效率的进电端表面预处理方法
CN114414747B (zh) * 2022-03-14 2022-08-12 中芯越州集成电路制造(绍兴)有限公司 激光退火均匀性的验证方法
CN117438297B (zh) * 2023-12-18 2024-02-27 合肥晶合集成电路股份有限公司 一种半导体器件及其制备方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08264468A (ja) * 1994-09-12 1996-10-11 Ion Kogaku Kenkyusho:Kk 炭化ケイ素への不純物ドーピング方法および電極形成方法
JP3184115B2 (ja) * 1997-04-11 2001-07-09 松下電器産業株式会社 オーミック電極形成方法
US20050104072A1 (en) * 2003-08-14 2005-05-19 Slater David B.Jr. Localized annealing of metal-silicon carbide ohmic contacts and devices so formed
JP5436231B2 (ja) * 2009-01-16 2014-03-05 昭和電工株式会社 半導体素子の製造方法及び半導体素子、並びに半導体装置
JP2012069798A (ja) * 2010-09-24 2012-04-05 Toyota Motor Corp 半導体装置の製造方法
JP5418466B2 (ja) * 2010-11-01 2014-02-19 住友電気工業株式会社 半導体装置およびその製造方法
JP2012156390A (ja) * 2011-01-27 2012-08-16 Sumitomo Heavy Ind Ltd レーザアニール方法及びレーザアニール装置

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015513218A (ja) * 2012-03-05 2015-04-30 アーベーベー・テクノロジー・アーゲー パワー半導体装置およびその製造方法
JP2016046310A (ja) * 2014-08-20 2016-04-04 住友電気工業株式会社 炭化珪素半導体装置の製造方法
WO2016031312A1 (ja) * 2014-08-26 2016-03-03 住友重機械工業株式会社 半導体素子の製造方法
JP2016046448A (ja) * 2014-08-26 2016-04-04 住友重機械工業株式会社 半導体素子の製造方法
JP2016046449A (ja) * 2014-08-26 2016-04-04 住友重機械工業株式会社 半導体素子の製造方法
JP2018503248A (ja) * 2014-12-08 2018-02-01 アーベーベー・シュバイツ・アーゲー ワイドバンドギャップジャンクションバリアショットキーダイオードの製造方法。
JP2016127157A (ja) * 2015-01-05 2016-07-11 住友重機械工業株式会社 レーザアニール装置及び半導体素子の製造方法
JP2017130550A (ja) * 2016-01-20 2017-07-27 国立大学法人広島大学 炭化珪素半導体装置及びその製造方法
JP2017224694A (ja) * 2016-06-15 2017-12-21 三菱電機株式会社 炭化珪素半導体装置およびその製造方法

Also Published As

Publication number Publication date
WO2014097714A1 (ja) 2014-06-26
TW201426828A (zh) 2014-07-01

Similar Documents

Publication Publication Date Title
WO2014097714A1 (ja) 半導体装置の製造方法
WO2016031312A1 (ja) 半導体素子の製造方法
JP4924690B2 (ja) 炭化珪素半導体装置の製造方法
US8501548B2 (en) Method for producing a semiconductor device using laser annealing for selectively activating implanted dopants
JP6164220B2 (ja) 半導体装置の製造方法
BR112016022522A2 (pt) Metalização à base de folha de células solares
JP2007123300A (ja) 不純物活性化方法、レーザアニール装置、半導体装置とその製造方法
JP2010186991A (ja) 半導体素子の製造方法及び半導体素子、並びに半導体装置
JPWO2006087786A1 (ja) 太陽電池の製造方法
JP2010212530A (ja) 半導体素子の製造方法
JP5962475B2 (ja) 炭化珪素半導体装置の製造方法及び炭化珪素半導体装置
JP5668270B2 (ja) 半導体素子の製造方法
KR20130108001A (ko) Ⅲ족 질화물 이종 접합 구조 소자의 선택적 저온 오믹 콘택 형성 방법
JP2012004185A (ja) 炭化珪素半導体装置の製造方法
JP6425457B2 (ja) 半導体素子の製造方法
JP6091703B2 (ja) 炭化珪素半導体装置の製造方法及び炭化珪素半導体装置
JP4043865B2 (ja) レーザ照射を用いた半導体装置の製造方法
JPWO2006098513A1 (ja) 熱処理方法及び半導体の結晶化方法
JP6165313B2 (ja) 炭化珪素半導体装置の製造方法
JP2019515498A5 (zh)
JP7155759B2 (ja) 半導体装置及び半導体装置の製造方法
JP6398861B2 (ja) 半導体装置の製造方法
WO2014128113A1 (en) Method for forming metal silicide layers
JPWO2018179798A1 (ja) 半導体装置の製造方法
TW201405857A (zh) 使用雷射照射製造一光伏打元件之方法