JP2013030679A - 成膜装置および成膜方法 - Google Patents
成膜装置および成膜方法 Download PDFInfo
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- JP2013030679A JP2013030679A JP2011167061A JP2011167061A JP2013030679A JP 2013030679 A JP2013030679 A JP 2013030679A JP 2011167061 A JP2011167061 A JP 2011167061A JP 2011167061 A JP2011167061 A JP 2011167061A JP 2013030679 A JP2013030679 A JP 2013030679A
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- 238000000151 deposition Methods 0.000 title claims description 37
- 230000008021 deposition Effects 0.000 title abstract description 32
- 239000010949 copper Substances 0.000 claims abstract description 176
- 239000000758 substrate Substances 0.000 claims abstract description 79
- 238000000034 method Methods 0.000 claims abstract description 78
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 70
- 229910052802 copper Inorganic materials 0.000 claims abstract description 70
- 238000007747 plating Methods 0.000 claims abstract description 39
- 239000000463 material Substances 0.000 claims abstract description 27
- 230000007246 mechanism Effects 0.000 claims abstract description 5
- 238000004904 shortening Methods 0.000 claims description 5
- 230000008569 process Effects 0.000 abstract description 37
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 43
- 239000010703 silicon Substances 0.000 description 43
- 229910052710 silicon Inorganic materials 0.000 description 43
- 238000004544 sputter deposition Methods 0.000 description 38
- 230000015572 biosynthetic process Effects 0.000 description 32
- 230000000903 blocking effect Effects 0.000 description 15
- 238000010586 diagram Methods 0.000 description 10
- 239000002245 particle Substances 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 6
- 238000002474 experimental method Methods 0.000 description 6
- 238000010891 electric arc Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 238000005498 polishing Methods 0.000 description 5
- 239000011800 void material Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 238000010248 power generation Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000007789 gas Substances 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- JZCCFEFSEZPSOG-UHFFFAOYSA-L copper(II) sulfate pentahydrate Chemical compound O.O.O.O.O.[Cu+2].[O-]S([O-])(=O)=O JZCCFEFSEZPSOG-UHFFFAOYSA-L 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000001141 propulsive effect Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- -1 silicide compound Chemical class 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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Abstract
【解決手段】成膜装置100は、貫通孔が形成された基板34Bおよび銅放出源35Bを格納する真空チャンバ30と、真空チャンバ30内を所定の真空度に減圧する真空ポンプ36と、基板34Bに印加する電力を発生する電源80と、基板34Bおよび銅放出源35B間の距離の設定に用いる駆動機構と、を備える。銅放出源35Bから放出された銅材料を基板34Bの一方の主面に堆積させ、主面における貫通孔の開口を銅材料からなる堆積膜によって閉塞させるとき、堆積膜による開口の閉塞状態が、上記距離および上記電力に基づいて調整される。
【選択図】図2
Description
<本実施形態の成膜技術の概要>
まず、本発明の実施形態によるCu貫通電極形成の概要について図面を参照しながら説明する。
次に、本実施形態の成膜装置の一例であるスパッタリング装置100の構成について図面を参照しながら詳細に説明する。
中間電極G1は、プラズマガン40の放電空間においてカソードKとの間で補助放電(グロー放電)を適切に維持できるよう、抵抗素子R1を介して電力発生部70と接続されている。また、中間電極G2は、プラズマガン40の放電空間においてカソードKとの間で補助放電(グロー放電)を適切に維持できるよう、抵抗素子R2を介して電力発生部70と接続されている。
なお、ボトルネック部28の間隔(Y方向寸法)および厚み(Z方向寸法)並びに幅(X方向寸法)は、シートプラズマ27を適切に通過するように設計されている。
また、円形状の第2および第3の電磁コイル32、33(空心コイル)は、互いに対をなして、真空成膜室30の側壁を臨むようにして成膜空間31を挟み、異極同士(ここでは、第2の電磁コイル32はN極、第3の電磁コイル33はS極)を向かい合わせて配置されている。
シリコン基板34Bの主面における、Cu堆積膜による貫通孔開口の閉塞は、シリコン基板34Bに印加するRF電力、および、T/S距離Lに基づいて適切に制御できることが、以下の検討実験により見出された。
上記のスパッタリング装置100を用いて、Cu堆積膜をシリコン基板の一方の主面に堆積させ、この主面における貫通孔の開口をCu堆積膜により閉塞させた。そして、かかるシリコン基板のCu堆積膜を銅めっき工程の電極(シード膜)に用い、このシード膜に電流を流すことにより、シリコン基板の貫通孔にCu貫通電極を形成するための銅めっきを施した。
本実施形態の成膜装置として、スパッタリング装置100を例にして述べたが、本成膜技術の適用範囲は、スパッタリング技術には限定されない。PVD(物理気相成長)を用いる真空成膜法であれば、他の成膜法、例えば、真空蒸着法であっても、本成膜技術を適用できると考えられる。このようにして、本実施形態では、CVD(化学気相成長)法に比べて安価なPVD法を用いて、Cu貫通電極を備えるシリコン基板を得ることができる。
21 輸送空間
22 円柱プラズマ
23 第1の電磁コイル
24A、24B 棒磁石
36 真空ポンプ
37 バルブ
27 シートプラズマ
28 ボトルネック部
29 通路
30 真空成膜室
31 成膜空間
32 第2の電磁コイル
33 第3の電磁コイル
34A 基板ホルダ
34B 基板(シリコン基板)
35A ターゲットホルダ
35B ターゲット(Cuターゲット)
38 永久磁石
40 プラズマガン
41 カソードユニット
41A ガラス管
41B 蓋部材
50 プラズマガン電源
52 バイアス電源
70 電力発生部
80 RF電源
100 スパッタリング装置
A アノード
G1、G2 中間電極
K カソード
R1、R2 抵抗素子
S 主面
Claims (8)
- 貫通孔が形成された基板および銅放出源を格納する真空チャンバと、
前記真空チャンバ内を所定の真空度に減圧する真空ポンプと、
前記基板に印加する電力を発生する電源と、
前記基板および前記銅放出源間の距離の設定に用いる駆動機構と、
を備え、
前記銅放出源から放出された銅材料を前記基板の一方の主面に堆積させ、前記主面における前記貫通孔の開口を前記銅材料からなる堆積膜によって閉塞させるとき、
前記堆積膜による前記開口の閉塞状態が、前記距離および前記電力に基づいて調整される、成膜装置。 - 前記開口が閉塞する前記堆積膜の膜厚は、前記距離を長くすること、または、前記電力を上げること、によって薄くなる、請求項1に記載の成膜装置。
- 前記開口が閉塞する前記堆積膜の堆積に必要な成膜時間は、前記距離を短くすること、または、前記電力を上げること、によって短縮する、請求項1に記載の成膜装置。
- 貫通孔が形成された基板および銅放出源を真空チャンバに格納する工程と、
前記真空チャンバ内を所定の真空度に減圧する工程と、
前記銅放出源から放出された銅材料を前記基板の一方の主面に堆積させ、前記主面における前記貫通孔の開口を前記銅材料からなる堆積膜によって閉塞させる閉塞工程と、を備え、
前記堆積膜による前記開口の閉塞状態を、前記基板および前記銅放出源間の距離および前記基板に印加する電力に基づいて調整する、成膜方法。 - 前記開口が閉塞する前記堆積膜の膜厚は、前記距離を長くすること、または、前記電力を上げること、によって薄くなる、請求項4に記載の成膜方法。
- 前記開口が閉塞する前記堆積膜の堆積に必要な成膜時間は、前記距離を短くすること、または、前記電力を上げること、によって短縮する、請求項4に記載の成膜方法。
- 前記閉塞工程の後、前記主面に堆積した堆積膜をシード膜に用い、前記シード膜に電流を流すことにより、前記貫通孔に貫通電極を形成するための銅めっき工程を更に備える、請求項4に記載の成膜方法。
- 前記銅めっき工程において、前記貫通電極は、前記シード膜から前記基板の他方の主面に向かって、銅が成長することにより形成される、請求項7に記載の成膜方法。
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KR20137010438A KR20140043695A (ko) | 2011-07-29 | 2012-05-22 | 성막장치 및 성막방법 |
US14/234,589 US20140246325A1 (en) | 2011-07-29 | 2012-05-22 | Film-forming apparatus and film-forming method |
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US9991161B1 (en) | 2017-03-07 | 2018-06-05 | Hong Kong Applied Science and Technology Research Institute Company Limited | Alternate plating and etching processes for through hole filling |
US20200135464A1 (en) * | 2018-10-30 | 2020-04-30 | Applied Materials, Inc. | Methods and apparatus for patterning substrates using asymmetric physical vapor deposition |
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JP2006024649A (ja) * | 2004-07-06 | 2006-01-26 | Tokyo Electron Ltd | インターポーザおよびインターポーザの製造方法 |
JP2007005402A (ja) * | 2005-06-21 | 2007-01-11 | Matsushita Electric Works Ltd | 半導体基板への貫通配線の形成方法 |
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TW201308435A (zh) | 2013-02-16 |
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