JP2012212885A - 低温結合方法および結合構成物 - Google Patents
低温結合方法および結合構成物 Download PDFInfo
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- JP2012212885A JP2012212885A JP2012107053A JP2012107053A JP2012212885A JP 2012212885 A JP2012212885 A JP 2012212885A JP 2012107053 A JP2012107053 A JP 2012107053A JP 2012107053 A JP2012107053 A JP 2012107053A JP 2012212885 A JP2012212885 A JP 2012212885A
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Abstract
【解決手段】方法は、シリコン、シリコン酸化物およびSiOのような材料の室温化学結合をなすように可逆的反応を防ぐために界面高分子化の副産物を除去することを含む。結合すべき面は、滝度合の平滑性および平坦性に研磨される(2)。VSEは、結合される面を僅かにエッチングするためにリアクチブイオンエッチングまたは湿式エッチングが用いられる(3)。表面粗さおよび平坦性は、落ちず、かつVSEプロセスにより増加される。エッチング面は、水酸化アンモニウム、フッ化アンモニウムのような溶液でリンスされ、前記面上の望ましい結合化学種の形成を助長する(4)。
【選択図】図1
Description
前記後VSEプロセスは、所望の化学種で結合面34の停止をもたらす表面反応を発生するための選択された薬品を含む溶液の浸漬からなることが好ましい。前記浸漬は、前記VSEプロセス後に直ぐになすことが好ましい。前記後VSEプロセスは、前記VSEプロセスが遂行される同じ装置でなされてもよい。両VSEおよび後VSEが乾式、すなわちプラズマ、RIE,ICP,スパッタまたはその他か、湿式、すなわち溶液浸漬のいずれである場合、これは最もたやすくなされる。所望の化学種は単一層、または原子もしくは分子の僅かな単一層からなることが好ましい。
択一的に、多くのSi−F基はNH4OHまたはHF浸漬後にPVCVDSiO2面で停止している。
Si−NH2+SiNH2→Si−N−N−Si+2H2 (3)
択一的に、酸化物面に堆積された前記HFまたはNH4FはSi−OH基の他にSi−F基によって停止される。HFまたはNH4F溶液は、シリコン酸化物を激しくエッチングするので、それらの濃度は適切な低レベルに制御されなければならず、かつ浸漬時間は十分に短くしなければならない。これは、後VSEプロセスが第2のVSEプロセスの例である。前記結合界面をわたる共有結合は、水素結合されたSi−HFまたはSi−OHの基間の高分子化反応によりに形成される。
Si−F+Si−OH→Si−O−Si+HF (5)
図8は、室温結合前の0.05%HFに浸漬されたシリコンウェハを覆う結合熱酸化物のフッ素濃度プロファイルを示す。フッ素濃度ピークは、結合界面に明らかに見られる。これは、所望の化学種が結合界面に位置されている前述した化学プロセスの証拠を提供する。
図5の(A)〜(E)は、2つのシリコンウェハの結合を示す。ウェハ50,52は、それぞれVSEプロセスに委ねられた自然酸化物(図示せず)を持つ面51,53を有する。図5の(C)で示される面53は、所望の化学種54で停止されている。前記2つのウェハは、接合され、結合55が形成し始める(図5の(D))。この結合は伝達し、かつ結合副産物、この場合H2ガス、は除去される。除去された前記副産物は図5の(E)に矢印で示される。
第1例において、3インチ、1〜10Ω−cm、ボロンドープシリコンウェハが用いられ、PECVD酸化物は前記シリコンウェハのいくつかの上に堆積された。比較のために、熱酸化シリコンウェハは調査された。前記PECVD酸化物厚さは、0.5μmで、ウェハの前側面および裏側面でそれぞれ0.3μmであった。酸化物は、研磨中のウェハ曲がりを最小にし、かつ平坦化を改良するために前記ウェハの両側面に堆積した。軽い研磨は、前記酸化物の約30nmを除去し、かつ前酸化物面を初期に〜0.56nmのマイクロ粗さ二乗平均値(RMS)を有する前酸化物面を最終〜0.18nmに平滑にするためになされた。変更されたRCA1溶液は前記ウェハを洗浄するために用いられ、それにスピン乾燥が続く。
前のプロセスは、第2および第3の例として処理されたInPウェハ(600μm厚さ)をAlNウェハ(380μm厚さ)または処理されたSi(380μm厚さ)およびInP(600μm厚さ)のウェハに結合することに適用された。これらの処理されたInPデバイスウェハは、PECVD酸化物で覆われかつ化学機械研磨(CMP)によって平坦化および平滑にされている。PECVD酸化物層は、同様にAlNウェハ上に堆積され、かつRMS表面粗さに改善するために平坦化および平滑にされている。処理されたSiおよび処理されたInPのウェハは、PECVD酸化物で堆積され、かつCMPを用いて平坦化および平滑にされている。室温で結合する例1と同様、VSE後、結合ウェハは室温で周囲空気に置かれる。
Claims (146)
- 第1、第2の結合面を形成すること;
前記第1、第2の結合面をエッチングすること;および
前記エッチング工程後に室温で前記第1、第2の結合面を共に結合すること
を含む結合方法。 - 前記エッチング工程は、前記エッチング後の前記第1、第2の結合面のそれぞれの面粗さが前記エッチング前のそれぞれの面粗さと実質的に同じになるように前記第1、第2の結合面をエッチングすることを含む請求項1記載の方法。
- 0.1から3.0nmの範囲の表面粗さを有する第1、第2の結合面を形成することを含む請求項2記載の方法。
- 前記エッチング工程は、前記第1、第2の結合面を活性化し、前記第1、第2の結合面に選択された結合基を形成することを含む請求項1記載の方法。
- 化学結合を形成可能な結合基をおおよそ室温で形成することを含む請求項4記載の方法。
- 結合基を前記第1、第2の結合面の界面から隔てて拡散または解離するように前記結合面の間に化学結合を形成することを含む請求項1記載の方法。
- 前記結合基を拡散または解離することによって前記第1、第2の結合面間の結合強度を増大することを含む請求項6記載の方法。
- 前記エッチング工程は、所望の原子および所望の分子のいずれかの単一層を前記結合面に形成することを含む請求項1記載の方法。
- 前記エッチング工程は、所望の原子および所望の分子のいずれかの僅かな単一層を前記結合面に形成することを含む請求項8記載の方法。
- 前記エッチング工程の後、前記第1、第2の結合面を溶液に浸漬し、所望の化学種で停止された結合面を形成することを含む請求項1記載の方法。
- 前記化学種は、少なくとも一つのシラノール基、NH2基、フッ素基およびHF基を含む請求項10記載の方法。
- 前記エッチング工程は、所望の原子および所望の分子のいずれかの単一層を前記結合面に形成することを含む請求項10記載の方法。
- 前記エッチング工程は、前記第1、第2の結合面をプラズマに曝すことを含む請求項1記載の方法。
- 前記第1、第2の結合面を酸素、アルゴン、NH3およびCF4のプラズマのいずれかに曝すことを含む請求項1記載の方法。
- 前記プラズマプロセスをRIEモード、ICPモード、プラズマモードおよびスッパタモードのいずれかで行なうことを含む請求項14記載の方法。
- それぞれの第1、第2の結合面をそれぞれ所望の面粗さおよび平坦さに研磨すること、および
前記研磨後に前記第1、第2の結合面をエッチングし、前記第1、第2の結合面を活性化すること
を含む請求項1記載の方法。 - 前記第1、第2の結合面の少なくとも一つを形成することは、非平坦面に研磨可能材料を堆積することを含む請求項16記載の方法。
- 前記研磨可能材料を堆積することは、シリコン酸化物、シリコン窒化物または絶縁性ポリマーのいずれかを堆積することを含む請求項17記載の方法。
- 前記エッチング工程は、結合対の有効な結合エネルギーを前記第1、第2の結合面におおよそ室温で増加させることを含む請求項1記載の方法。
- 少なくとも500mJ/m2の結合を得ることを含む請求項19記載の方法。
- 少なくとも1000mJ/m2の結合を得ることを含む請求項19記載の方法。
- 少なくとも2000mJ/m2の結合を得ることを含む請求項19記載の方法。
- 少なくとも500mJ/m2の結合を形成することを含む請求項1記載の方法。
- 少なくとも1000mJ/m2の結合を得ることを含む請求項1記載の方法。
- 少なくとも2000mJ/m2の結合を得ることを含む請求項1記載の方法。
- 化学結合を前記結合面間に形成することを含む請求項1記載の方法。
- 化学結合を前記結合面間に大気および真空のいずれかで形成することを含む請求項26記載の方法。
- 化学結合を前記結合面間に低、超高および真空のいずれかで形成することを含む請求項26記載の方法。
- 前記結合された結合面の次の処理の間にウェハが曲がるのを実質的に除去するために十分なエネルギーの結合を形成することを含む請求項1記載の方法。
- 前記結合された結合面の次の熱サイクルの間にウェハが曲がるのを実質的に除去するために十分なエネルギーの結合を形成することを含む請求項29記載の方法。
- 前記エッチング工程は、
結合対の有効な結合エネルギーを前記第1、第2の結合面におおよそ室温で増加させること、および
前記結合を室温で増やすこと
を含む請求項1記載の方法。 - 化学結合を室温で増やすことを含む請求項31記載の方法。
- 前記第1、第2の結合面を有する第1および第2の結合材料としてのシリコン酸化物を堆積すること、および
酸素プラズマを用いて前記第1、第2の結合面をエッチングすること
を含む請求項1記載の方法。 - 前記エッチング後に前記結合材料をアンモニア系溶液でリンスすることを含む請求項33記載の方法。
- 前記エッチング後に前記結合材料を水酸化アンモニアでリンスすることを含む請求項34記載の方法。
- 前記エッチング後に前記結合材料をフッ化アンモニアでリンスすることを含む請求項33記載の方法。
- 前記第1、第2の結合面を真空下でエッチングすること、および
前記第1および第2の結合面を前記真空を破らずに結合すること
を含む請求項1記載の方法。 - 結合材料を前記第1、第2の面にそれぞれ堆積し、前記第1、第2の結合面を得ることを含む請求項1記載の方法。
- 前記結合材料としてのシリコン酸化物およびシリコン窒化物の一つを堆積することを含む請求項38記載の方法。
- シリコン酸化物を前記結合材料として堆積すること、
前記シリコン酸化物を酸素、CF4およびアルゴンのプラズマRIEの一つを用いてエッチングすること、および
前記エッチング後に前記シリコン酸化物をアンモニア系溶液でリンスすることを含む請求項1記載の方法。 - 前記第1、第2の結合材料を湿式エッチング法を用いてエッチングすることを含む請求項1記載の方法。
- 前記エッチング後に前記第1、第2の結合面を溶液に浸漬することを含む請求項42記載の方法。
- シリコン酸化物を結合材料として堆積すること、
前記シリコン酸化物を希釈HFおよび希釈NH4Fの一つを用いてエッチングすること
を含む請求項1記載の方法。 - 前記エッチング後に前記シリコン酸化物をアンモニア系溶液でリンスすることを含む請求項43記載の方法。
- 前記第1、第2の結合面をシリコンとして形成すること、および
前記結合面をHNO3の溶液および希釈NFを用いてエッチングすること
を含む請求項1記載の方法。 - 前記第1、第2の結合面をそれぞれ自然酸化物層を有するシリコンとして形成すること、および
前記エッチング工程を用いて前記自然酸化物層を活性化すること
を含む請求項1記載の方法。 - 前記第1、第2の結合面をそれぞれ自然酸化物層を有するシリコンとして形成すること、および
前記第1、第2の結合面を酸素プラズマに曝して前記自然酸化物層をエッチングすること
を含む請求項1記載の方法。 - プラズマエッチング中に欠陥領域を前記シリコンに創る請求項47記載の方法。
- 前記第1、第2の結合材料をプラズマRIE法を用いてエッチングすること、
欠陥を有する領域を前記結合面に対して最も近くに形成すること、および
前記領域を用いて結合副産物を除去すること
を含む請求項1記載の方法。 - 前記第1、第2の結合面を活性化すること、および
結合副産物を除去するために前記第1、第2の結合面下に領域を創ること
を含む請求項1記載の方法。 - 少なくとも結合副産物の除去および結合副産物を吸収されるかまたは前記結合面から隔てて拡散させることが可能な化学種への転換のために領域を前記第1、第2の結合面に対して最も近くに創ることを含む請求項1記載の方法。
- 第1の半導体ウェハ上に酸化物層を堆積することによって前記第1の結合面を形成すること、
第2の半導体ウェハ上に酸化物層を堆積することによって前記第2の結合面を形成すること、および
前記第1および第2の半導体ウェハを結合すること
を含む請求項1記載の方法。 - 前記第1の結合面を堆積された酸化物層として第1の基板および第1活性化領域を有する第1の半導体ウェハ上に形成すること、
前記第2の結合面を堆積された酸化物層として第2の基板および第2活性化領域を有する第2の半導体ウェハ上に形成すること、
前記第1、第2の半導体ウェハを結合すること、および
前記結合後に少なくとも前記第1および第2の基板のいずれかの実質な部分を除去すること
を含む請求項1記載の方法。 - 前記第1の結合面を堆積された酸化物層として基板および活性化領域を有する半導体ウェハ上に形成すること、
前記第2の結合面を代用基板として形成すること、
前記半導体ウェハと前記代用基板を結合すること、および
前記結合後に少なくとも前記基板の実質な部分を除去すること
を含む請求項1記載の方法。 - 前記結合は、結合高分子化を生成し、かつ副産物の除去をなすための特別の期間、前記第1、第2の結合面間の接合を保持することを含む請求項1記載の方法。
- 少なくとも約20時間の期間、前記第1、第2の結合面間の接合を保持することを含む請求項55記載の方法。
- 前記結合は、結合副産物の除去するために大気中で特別の期間、前記第1および第2の結合面を保持することを含む請求項1記載の方法。
- 真空下で結合固定を用いて前記第1、第2の結合面をエッチングすること、
前記第1、第2の結合面をまとめるために前記真空を保持しながら、前記固定を用いて前記第1、第2の結合面を結合すること
を含む請求項1記載の方法。 - 第1の酸化物層を電気デバイスを含む第1のウェハ上に形成すること、および
前記第1の酸化物層を研磨し、前記第1の結合面を形成すること
を含む請求項1記載の方法。 - 第2の酸化物層を電気デバイスを含む第2のウェハ上に形成すること、および
前記第2の酸化物層を研磨し、前記第2の結合面を形成すること
を含む請求項59記載の方法。 - 前記第1の酸化物層を第1の技術の電気デバイスを含む前記第1のウェハ上に形成すること、および
前記第2の酸化物層を前記第1の技術と異なる第2の技術の電気デバイスを含む前記第2のウェハ上に形成すること
を含む請求項60記載の方法。 - 前記第1、第2の電気デバイスを相互に接続することを含む請求項60記載の方法。
- 前記第1の結合面を熱伝播器、代用基板、アンテナ、配線層および前もって形成された多層層間接続の一つ面に形成することを含む請求項60記載の方法。
- 前記第2の結合面を熱伝播器、代用基板、アンテナ、配線層および前もって形成された多層層間接続のいずれかの面に形成することを含む請求項60記載の方法。
- 前記第1の結合面を第1の集積回路を含む第1のウェハ上に形成することを含む請求項1記載の方法。
- 前記第2の結合面を第2の集積回路を含む第2のウェハ上に形成することを含む請求項65記載の方法。
- 前記第1の結合面を第1の技術の前記第1の集積回路を含む前記第1のウェハ上に形成すること、および
前記第2の結合面を前記第1の技術と異なる第2の技術の前記第2集積回路を含む前記第2のウェハ上に形成すること
を含む請求項66記載の方法。 - 前記第1、第2の集積回路を相互に接続することを含む請求項66記載の方法。
- 前記第1、第2の結合面は、実質的に平坦であることを含む請求項1記載の方法。
- 前記第1、第2の結合面を形成することは、絶縁材料を堆積することを含む請求項1記載の方法。
- 前記絶縁材料を所望の平坦さおよび面粗さに研磨することを含む請求項70記載の方法。
- 前記絶縁材料を非平坦面上に堆積することを含む請求項70記載の方法。
- 前記研磨は、化学機械研磨を含む請求項72記載の方法。
- 前記第1、第2の結合面を非平坦面上に形成すること、および
前記第1、第2の結合面を所望の平坦さおよび面粗さに研磨すること
を含む請求項1記載の方法。 - 前記研磨は、化学機械研磨を含む請求項74記載の方法。
- 前記エッチングは、前記結合面を活性化すること、および
所望の化学種で前記結合面を停止すること
を含む請求項1記載の方法。 - 前記エッチングは、前記結合面を活性化するための第1のエッチング工程、および所望の化学種で前記結合面を停止するための第2のエッチング工程を含む請求項1記載の方法。
- 前記エッチング工程を用いてエッチングされた結合面を維持すること、および
前記結合面をガス状化学環境に曝して所望の化学種で前記結合面を停止すること
を含む請求項1記載の方法。 - 第1の酸化物層を電気デバイスを含みかつ非平坦面を有する第1のウェハ上に形成すること、および
第2の酸化物層を電気デバイスを含む第2のウェハ上に形成すること、および
前記第1、第2の酸化物層を研磨し、前記第1および第2の結合面をそれぞれ形成すること
を含む請求項1記載の方法。 - 前記第2の酸化物層を非平坦面を有する前記第2のウェハ上に形成することを含む請求項79記載の方法。
- 第1の酸化物層を電気デバイスを含みかつ不規則な幾何学面を有する第1のウェハ上に形成すること、および
第2の酸化物層を電気デバイスを含む第2のウェハ上に形成すること、および
前記第1、第2の酸化物層を研磨し、前記第1および第2の結合面をそれぞれ形成すること
を含む請求項1記載の方法。 - 前記第2の酸化物層を電気デバイスを含みかつ不規則な幾何学面を有する前記第2のウェハ上に形成することを含む請求項81記載の方法。
- 0.1から3.0nmの範囲の面粗さをそれぞれ有する第1、第2の結合面を形成すること、
前記面粗さを維持しながら、前記第1、第2の結合面から材料を除去すること、および
前記第1、第2の結合面を室温にて少なくとも500mJ/m2の結合強度で直接結合すること
を含む結合方法。 - 前記第1、第2の結合面を室温にて少なくとも1000mJ/m2の結合強度で直接結合することを含む請求項83記載の方法。
- 前記第1、第2の結合面を室温にて少なくとも2000mJ/m2の結合強度で直接結合することを含む請求項83記載の方法。
- 前記第1、第2の結合面を活性化すること、および
前記第1、第2の結合面に選択的な結合基を形成すること
を含む請求項83記載の方法。 - それぞれの前記第1、第2の結合面を前記面粗さに研磨すること、および
前記研磨後に前記第1、第2の結合面をエッチングして前記第1、第2の結合面を活性化すること
を含む請求項83記載の方法。 - 結合副産物を、前記結合工程中に吸収されるかまたは前記結合面から隔てて拡散させることが可能な化学種への転換を含む請求項83記載の方法。
- プラズマRIE法を用いて前記第1、第2の結合面をエッチングすること、
欠陥を有する表面下層を形成すること、および
前記表面下層を用いて結合副産物を除去すること
を含む請求項83記載の方法。 - 前記第1の結合面を面に形成されたデバイスを有する第1の半導体ウェハの面として形成すること、および
前記第2の結合面を面に形成されたデバイスを有する第2の半導体ウェハの面として形成すること
を含む請求項83記載の方法。 - 前記第1、第2のウェハのいずれかの実質な部分を除去することを含む請求項90記載の方法。
- 前記第1、第2のウェハのデバイスを相互に接続することを含む請求項90記載の方法。
- 第1の絶縁層を電気デバイスを含む第1のウェハ上に形成すること、
前記第1の絶縁層を研磨して前記第1の結合面を形成すること、
第2の絶縁層を電気デバイスを含む第2のウェハ上に形成すること、および
前記第2の酸化物層を研磨して前記第2の結合面を形成すること
を含む請求項83記載の方法。 - 第1の絶縁層を電気デバイスを含みかつ不規則な幾何学面を有する第1のウェハ上に形成すること、
前記第1の絶縁層を研磨して前記第1の結合面を形成すること、
第2の絶縁層を電気デバイスを含みかつ不規則な幾何学面を有する第2のウェハ上に形成すること、および
前記第2の酸化物層を研磨して前記第2の結合面を形成すること
を含む請求項83記載の方法。 - 第1、第2の結合面を形成すること、
前記第1、第2の結合面をエッチングすること、
約室温で化学結合の形成をなすように化学種で前記第1、第2の結合面を停止すること、および
前記第1、第2の結合面を約室温で結合すること
を含む結合方法。 - 前記第1、第2の結合面を室温にて少なくとも500mJ/m2の結合強度で結合することを含む請求項95記載の方法。
- 前記第1、第2の結合面を室温にて少なくとも1000mJ/m2の結合強度で結合することを含む請求項95記載の方法。
- 前記第1、第2の結合面を室温にて少なくとも2000mJ/m2の結合強度で結合することを含む請求項95記載の方法。
- 前記結合工程の前に前記第1、第2の結合面を活性化することを含む請求項95記載の方法。
- 前記第1、第2の結合面を研磨すること、および
前記研磨後に前記第1、第2の結合面をエッチングして前記第1、第2の結合面を活性化すること
を含む請求項95記載の方法。 - 結合副産物を、前記結合工程中に吸収されるか、または前記結合面から隔てて拡散させることが可能な化学種への転換を含む請求項95記載の方法。
- 前記第1の結合面を面に形成されたデバイスを有する第1の半導体ウェハの面として形成すること、および
前記第2の結合面を面に形成されたデバイスを有する第2の半導体ウェハの面として形成すること
を含む請求項95記載の方法。 - 前記第1、第2のウェハのいずれかは、基板を備え、前記方法は前記第1、第2のウェハのいずれかの実質な部分を除去することを含む請求項102記載の方法。
- 前記第1、第2のウェハ中のデバイスを相互に接続することを含む請求項102記載の方法。
- 第1の絶縁層を電気デバイスを含む第1のウェハ上に形成すること、
前記第1の絶縁層を研磨して前記第1の結合面を形成すること、
第2の絶縁層を電気デバイスを含む第2のウェハ上に形成すること、および
前記第2の酸化物層を研磨して前記第2の結合面を形成すること
を含む請求項95記載の方法。 - 第1の絶縁層を電気デバイスを含みかつ不規則な幾何学面を有する第1のウェハ上に形成すること、
前記第1の絶縁層を研磨して前記第1の結合面を形成すること、
第2の絶縁層を電気デバイスを含みかつ不規則な幾何学面を有する第2のウェハ上に形成すること、および
前記第2の酸化物層を研磨して前記第2の結合面を形成すること
を含む請求項95記載の方法。 - 第1エッチング結合面を有する第1の材料、および
前記第1の結合面に室温で少なくとも500〜2000mJ/m2の結合強度を有して直接結合された第2のエッチング結合面を有する第2の材料
を備える結合デバイス。 - 活性化され、かつ所望の結合化学種で停止された前記第1および第2の結合面を備える請求項107記載のデバイス。
- 前記所望の結合化学種は、前記結合面上の所望の原子および所望の分子のいずれかの単一層を含む請求項108記載のデバイス。
- 前記所望の化学種は、少なくとも一つのシラノール基、NH2基、フッ素基およびHF基を含む請求項108記載のデバイス。
- 前記第1、第2の結合面に対してそれぞれ最も近くに位置される欠陥領域を各々有する前記第1、第2の結合面を含む請求項107記載のデバイス。
- 前記第1の材料は、表面に形成されたデバイスを有する第1の半導体ウェハの表面を備え、かつ前記第2の材料は表面に形成されたデバイスを有する第2の半導体ウェハの表面を備える請求項107記載のデバイス。
- 前記第1、第2のウェハのいずれかは、前記第1、第2のウェハのいずれかの基板の実質の部分を除去後のデバイス領域を備える請求項112記載のデバイス。
- 前記第1、第2のウェハ中のデバイスが相互に接続されていることを備える請求項112記載のデバイス。
- 異なる技術である前記第1、第2のウェハを備える請求項112記載のデバイス。
- 前記第1、第2のウェハのいずれかは、集積回路を備える請求項107記載のデバイス
- 前記第1、第2のウェハ中のデバイスが相互に接続されていることを備える請求項116記載のデバイス。
- 不規則な幾何学面を有する第1、第2のウェハを備える請求項116記載のデバイス。
- 前記第1の材料は、電気デバイスを含み、かつ第1の非平坦面を有する第1のウェハを備え、前記第1の結合面は前記第1の非平坦面上の研磨およびエッチングされた堆積酸化物層を備える請求項107記載のデバイス。
- 前記第2の材料は、電気デバイスを含み、かつ第2の非平坦面を有する第2のウェハを備え、前記第2の結合面は前記第2の非平坦面上の研磨、平坦化およびエッチングされた堆積酸化物層を備える請求項119記載のデバイス。
- 前記第1の材料は、電気デバイスを含み、かつ不規則幾何学の第1の面を有する第1のウェハを備え、前記第1の結合面は前記第1の面上の研磨、平坦化およびエッチングされた堆積酸化物層を備える請求項107記載の方法。
- 前記第2の材料は、電気デバイスを含み、かつ不規則幾何学の第2の面を有する第2のウェハを備え、前記第2の結合面は前記第2の面上の研磨、平坦化およびエッチングされた堆積酸化物層を備える請求項121記載の方法。
- 第1の所望の結合化学種で停止された第1のエッチングおよび活性化された結合面を有する第1の材料、および
第2の所望の結合化学種で停止され、前記第1の結合面に室温で結合された第2のエッチングおよび活性化された結合面を有する第2の材料
を備える結合デバイス。 - 前記化学種は、少なくとも一つのシラノール基、NH2基、フッ素基およびHF基を含む請求項123記載のデバイス。
- 前記第1、第2の結合面に対してそれぞれ最も近くに位置される欠陥領域を各々有する前記第1、第2の結合面を含む請求項123記載のデバイス。
- 前記所望の結合化学種は、前記結合面上の所望の原子および所望の分子の一つの単一層を含む請求項123記載のデバイス。
- 第1の結合面を室温で少なくとも500〜2000mJ/m2の結合強度を有して結合された第2の結合面を備える請求項123記載のデバイス。
- 前記第1の結合面は、表面に形成されたデバイスを有する第1の半導体ウェハの表面を備え、かつ前記第2の結合面は表面に形成されたデバイスを有する第2の半導体ウェハの表面を備える請求項123記載のデバイス。
- 前記第1、第2のウェハいずれかは、前記第1、第2のウェハのいずれかの基板の実質の部分を除去後のデバイス領域を備える請求項128記載のデバイス。
- 前記第1、第2のウェハ中のデバイスが相互に接続されていることを備える請求項123記載のデバイス。
- 異なる技術である前記第1、第2のウェハを備える請求項123記載のデバイス。
- 前記第1、第2のウェハのいずれかは、集積回路を備える請求項123記載のデバイス
- 前記第1、第2のウェハ中に相互に接続されているデバイスを備える請求項123記載のデバイス。
- 前記第1の材料は、電気デバイスを含み、かつ第1の非平坦面を有する第1のウェハを備え、前記第1の結合面は前記第1の非平坦面上の研磨およびエッチングされた堆積酸化物層を備える請求項123記載のデバイス。
- 前記第2の材料は、電気デバイスを含み、かつ第2の非平坦面を有する第2のウェハを備え、前記第2の結合面は前記第2の非平坦面上の研磨、平坦化およびエッチングされた堆積酸化物層を備える請求項134記載のデバイス。
- 前記第1の材料は、電気デバイスを含み、かつ不規則幾何学の第1の面を有する第1のウェハを備え、前記第1の結合面は前記第1の面上の研磨、平坦化およびエッチングされた堆積酸化物層を備える請求項123記載の方法。
- 前記第2の材料は、電気デバイスを含み、かつ不規則幾何学の第2の面を有する第2のウェハを備え、前記第2の結合面は前記第2の面上の研磨、平坦化およびエッチングされた堆積酸化物層を備える請求項123記載の方法。
- 前記第1、第2の結合面は、第1、第2の基板の各々の面であり、前記方法は前記第1、第2の基板のいずれかの実質の部分を除去することを含む請求項1記載の方法。
- 前記除去工程後に前記結合基板をアニールすることを含む請求項138記載の方法。
- 前記第1、第2の基板は、第1、第2の電気デバイスを有し、前記方法は前記除去工程後に前記第1、第2の電気デバイスを相互に接続することを含む請求項138記載の方法。
- 前記除去工程後に前記結合基板をアニールすることを含む請求項91記載の方法。
- 前記除去工程後に前記第1、第2の半導体ウェハ中のデバイスを相互に接続することを含む請求項91記載の方法。
- 前記除去工程後に前記結合基板をアニールすることを含む請求項103記載の方法。
- 前記デバイス領域はアニールされたデバイス領域を備える請求項113記載の方法。
- 前記第1、第2の材料は、各々第1、第2の基板を備え、かつ第1、第2の基板のいずれかは前記第1、第2の基板のいずれかの基板の実質の部分を除去することによって得られる基板領域を備える請求項129記載のデバイス。
- 前記基板領域は、アニールされた基板領域を備える請求項145記載のデバイス。
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2003
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2004
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2007
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2009
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2010
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2011
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2014
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2015
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