JP2011061222A - 多結晶シリコン・ゲート上のサリサイドの抵抗を改善するための方法およびデバイス - Google Patents
多結晶シリコン・ゲート上のサリサイドの抵抗を改善するための方法およびデバイス Download PDFInfo
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 19
- 238000000034 method Methods 0.000 title abstract description 34
- 229920005591 polysilicon Polymers 0.000 title description 2
- 125000006850 spacer group Chemical group 0.000 claims abstract description 266
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 26
- 239000010936 titanium Substances 0.000 claims abstract description 26
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims description 43
- 150000004767 nitrides Chemical group 0.000 claims description 38
- 229910017052 cobalt Inorganic materials 0.000 claims description 11
- 239000010941 cobalt Substances 0.000 claims description 11
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 11
- 229910008484 TiSi Inorganic materials 0.000 claims 1
- 238000000151 deposition Methods 0.000 abstract description 20
- 238000000137 annealing Methods 0.000 abstract description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 3
- 239000000377 silicon dioxide Substances 0.000 abstract description 3
- 229910021341 titanium silicide Inorganic materials 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 371
- 238000005530 etching Methods 0.000 description 64
- 239000000376 reactant Substances 0.000 description 31
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 20
- 238000001312 dry etching Methods 0.000 description 20
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 20
- 230000008569 process Effects 0.000 description 15
- 229910021332 silicide Inorganic materials 0.000 description 15
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 13
- 238000001039 wet etching Methods 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 229910052759 nickel Inorganic materials 0.000 description 10
- 229910052697 platinum Inorganic materials 0.000 description 10
- 239000011241 protective layer Substances 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 10
- 229910052715 tantalum Inorganic materials 0.000 description 10
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 10
- 238000001020 plasma etching Methods 0.000 description 9
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 238000005566 electron beam evaporation Methods 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 239000012299 nitrogen atmosphere Substances 0.000 description 5
- 238000004151 rapid thermal annealing Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000006911 nucleation Effects 0.000 description 4
- 238000010899 nucleation Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide
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- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
- H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
- H01L21/28052—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a silicide layer formed by the silicidation reaction of silicon with a metal layer
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- H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement
- H01L29/4933—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement with a silicide layer contacting the silicon layer, e.g. Polycide gate
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Abstract
【解決手段】リセスが形成されたシリコン酸化膜からなる厚い内部スペーサ、およびシリコン窒化膜からなる厚い外部スペーサを有する多結晶シリコンゲートを形成する。多結晶シリコン上にチタンをデポジションし、アニールによりチタンシリサイド層260を形成する。チタンシリサイド層は多結晶シリコンより幅広く形成され、シリコン酸化膜からなる厚い内部スペーサによって制約を受けず、応力を受けない。
【選択図】図2(h)
Description
本発明は、半導体デバイスの分野に関する。より詳細には、本発明は、ゲート電極上の抵抗を改善するための方法およびデバイスに関する。具体的には、本発明は、多結晶シリコン・ゲート上のサリサイドの抵抗を改善するための方法およびデバイスに関する。
トランジスタは、半導体回路において電流の流れを制御するために一般的に使用されている。例えば、トランジスタをスイッチング機構として使用して、あるしきい値電圧に達したときに回路内のソースとドレイン領域との間に電流を流すことができる。一般にトランジスタは、加えられた電圧に基づいてトランジスタ内に電流を流し、または電流が流れないようにするゲート電極を含む。
本発明は、ゲート電極幅が0.20μmより狭い場合のポリサイドの抵抗を改善する方法およびデバイスを提供する。本発明はいくつかの実施態様を提供し、その一実施態様について以下に述べる。
本発明は、幅が0.20μm未満のゲート電極上のポリサイドの抵抗を改善する方法およびデバイスを提供する。本発明のいくつかの実施形態に関する以下の記述では、本発明の完全な理解をもたらすために、非常に数多くの詳細が述べられている。本発明はそのような具体的な詳細なしで実施できることが、当業者に理解されよう。その他の例では、本発明の対象を不明瞭にしないため、周知の構造および技法については詳細に述べていない。本発明の構造は、様々な技法によって形成できることが、当業者に理解されよう。
Claims (22)
- 基板上に配置されるゲート層と、
前記ゲート層の両側に隣接して配置される薄い第1のスペーサと、
前記薄い第1のスペーサに隣接して配置される厚い第2のスペーサと、
前記ゲート層上に配置される導電層とを含むゲート電極であって、
前記薄い第1のスペーサと前記厚い第2のスペーサは、それらの全体の高さに沿って相互に平行である側壁を有し、
前記ゲート層と前記薄い第1のスペーサと前記厚い第2のスペーサは、ほぼ同じ高さを有し、
前記導電層は、前記薄い第1のスペーサ上を横方向に延在するが、前記ゲート層の側壁と前記厚い第2のスペーサ上には延在しない、前記ゲート電極。 - ゲート層は、多結晶シリコンである請求項1に記載のゲート電極。
- 導電層は、ポリサイドである請求項2に記載のゲート電極。
- ポリサイドは、チタンサリサイド(TiSi2)である請求項3に記載のゲート電極。
- 薄い第1のスペーサは、酸化物である請求項1に記載のゲート電極。
- 厚い第2のスペーサは、窒化物である請求項1に記載のゲート電極。
- 薄い第1のスペーサは、少なくとも厚い第2のスペーサと同じ高さである請求項1に記載のゲート電極。
- 厚い第2のスペーサは、少なくとも薄い第1のスペーサの2倍の厚さである請求項1に記載のゲート電極。
- 厚い第2のスペーサは、300から2000オングストロームの厚さである請求項8に記載のゲート電極。
- 厚い第2のスペーサは、少なくとも800オングストロームの厚さである請求項9に記載のゲート電極。
- 基板上に配置される絶縁層と、
前記絶縁層上に配置されるゲート層と、
前記ゲート層の両側に隣接して配置される薄い第1のスペーサと、
前記薄い第1のスペーサの両側に隣接して配置される薄い第2のスペーサと、
前記薄い第2のスペーサの両側に隣接して配置される薄い第3のスペーサと、
前記薄い第3のスペーサの両側に隣接して配置される厚い第4のスペーサと、
前記ゲート層に配置される導電層と、を含むゲート電極であって、
前記ゲート層は、その高さに沿って均一な幅であり、
前記導電層少なくとも一部は、前記ゲート層より幅が広い、前記ゲート電極。 - 導電層は、ゲート層と接触しているより狭いベース部によって規定される不均一な断面と、より幅の広い上面部とを有する請求項11に記載のゲート電極。
- 薄い第1のスペーサと薄い第2のスペーサは、導電層のより幅の広い上面部を収容するように変形する請求項12に記載のゲート電極。
- ゲート層より幅の広い導電層の部分は、少なくとも薄い第1のスペーサ上に位置する請求項12に記載のゲート電極。
- 絶縁層は、酸化物である請求項11に記載のゲート電極。
- ゲート層は、多結晶シリコンである請求項15に記載のゲート電極。
- 導電層は、ポリサイドである請求項16に記載のゲート電極。
- 薄い第1のスペーサは、酸化物である請求項17に記載のゲート電極。
- 薄い第2のスペーサは、窒化物である請求項18に記載のゲート電極。
- 薄い第3のスペーサは、酸化物である請求項19に記載のゲート電極。
- 厚い第4のスペーサは、窒化物である請求項20に記載のゲート電極。
- 基板上に配置される絶縁層と、
前記絶縁層上に配置されるゲート層と、
前記ゲート層上に配置される導電層と、
前記ゲート層の両側に隣接して配置される厚い第1のスペーサと、
前記厚い第1のスペーサに隣接して配置される厚い第2のスペーサと、を含むゲート電極であって、
前記導電層は、コバルトを含むポリサイドであり、かつ、前記ゲート層のエッジを超えて延びることができ、
前記厚い第1のスペーサは、前記導電層と前記厚い第2のスペーサとの間に開放スペースを作るようにリセス形成される、前記ゲート電極。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/191,729 US6235598B1 (en) | 1998-11-13 | 1998-11-13 | Method of using thick first spacers to improve salicide resistance on polysilicon gates |
US09/191,729 | 1998-11-13 | ||
US09/276,477 | 1999-03-25 | ||
US09/276,477 US6188117B1 (en) | 1998-11-13 | 1999-03-25 | Method and device for improved salicide resistance on polysilicon gates |
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Families Citing this family (113)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6235598B1 (en) * | 1998-11-13 | 2001-05-22 | Intel Corporation | Method of using thick first spacers to improve salicide resistance on polysilicon gates |
US6190961B1 (en) * | 1999-09-22 | 2001-02-20 | International Business Machines Corporation | Fabricating a square spacer |
US6492275B2 (en) | 2000-01-21 | 2002-12-10 | Advanced Micro Devices, Inc. | Control of transistor performance through adjustment of spacer oxide profile with a wet etch |
US6348379B1 (en) | 2000-02-11 | 2002-02-19 | Advanced Micro Devices, Inc. | Method of forming self-aligned contacts using consumable spacers |
US6406986B1 (en) * | 2000-06-26 | 2002-06-18 | Advanced Micro Devices, Inc. | Fabrication of a wide metal silicide on a narrow polysilicon gate structure |
US6548403B1 (en) * | 2000-10-05 | 2003-04-15 | Advanced Micro Devices, Inc. | Silicon oxide liner for reduced nickel silicide bridging |
US6312998B1 (en) * | 2000-10-16 | 2001-11-06 | Advanced Micro Devices, Inc. | Field effect transistor with spacers that are removable with preservation of the gate dielectric |
US6455389B1 (en) * | 2001-06-01 | 2002-09-24 | Kuo-Tai Huang | Method for preventing a by-product ion moving from a spacer |
KR100396895B1 (ko) * | 2001-08-02 | 2003-09-02 | 삼성전자주식회사 | L자형 스페이서를 채용한 반도체 소자의 제조 방법 |
US6838393B2 (en) * | 2001-12-14 | 2005-01-04 | Applied Materials, Inc. | Method for producing semiconductor including forming a layer containing at least silicon carbide and forming a second layer containing at least silicon oxygen carbide |
US7091137B2 (en) * | 2001-12-14 | 2006-08-15 | Applied Materials | Bi-layer approach for a hermetic low dielectric constant layer for barrier applications |
JP2003243542A (ja) * | 2002-02-15 | 2003-08-29 | Seiko Epson Corp | 不揮発性記憶装置の製造方法 |
US7146984B2 (en) * | 2002-04-08 | 2006-12-12 | Synecor, Llc | Method and apparatus for modifying the exit orifice of a satiation pouch |
DE10240106A1 (de) * | 2002-08-30 | 2004-03-11 | Infineon Technologies Ag | Ausbildung einer elektrischen Verbindung zwischen Strkturen in einem Halbleitersubstrat |
US6831008B2 (en) * | 2002-09-30 | 2004-12-14 | Texas Instruments Incorporated | Nickel silicide—silicon nitride adhesion through surface passivation |
US7749563B2 (en) * | 2002-10-07 | 2010-07-06 | Applied Materials, Inc. | Two-layer film for next generation damascene barrier application with good oxidation resistance |
US7160813B1 (en) * | 2002-11-12 | 2007-01-09 | Novellus Systems, Inc. | Etch back process approach in dual source plasma reactors |
US7388259B2 (en) * | 2002-11-25 | 2008-06-17 | International Business Machines Corporation | Strained finFET CMOS device structures |
US6841826B2 (en) * | 2003-01-15 | 2005-01-11 | International Business Machines Corporation | Low-GIDL MOSFET structure and method for fabrication |
US6884712B2 (en) * | 2003-02-07 | 2005-04-26 | Chartered Semiconductor Manufacturing, Ltd. | Method of manufacturing semiconductor local interconnect and contact |
US6887798B2 (en) * | 2003-05-30 | 2005-05-03 | International Business Machines Corporation | STI stress modification by nitrogen plasma treatment for improving performance in small width devices |
US7329923B2 (en) * | 2003-06-17 | 2008-02-12 | International Business Machines Corporation | High-performance CMOS devices on hybrid crystal oriented substrates |
US7279746B2 (en) * | 2003-06-30 | 2007-10-09 | International Business Machines Corporation | High performance CMOS device structures and method of manufacture |
US6975006B2 (en) * | 2003-07-25 | 2005-12-13 | Taiwan Semiconductor Manufacturing Company | Semiconductor device with modified channel compressive stress |
US7410846B2 (en) | 2003-09-09 | 2008-08-12 | International Business Machines Corporation | Method for reduced N+ diffusion in strained Si on SiGe substrate |
US6890808B2 (en) * | 2003-09-10 | 2005-05-10 | International Business Machines Corporation | Method and structure for improved MOSFETs using poly/silicide gate height control |
US6887751B2 (en) | 2003-09-12 | 2005-05-03 | International Business Machines Corporation | MOSFET performance improvement using deformation in SOI structure |
US7170126B2 (en) * | 2003-09-16 | 2007-01-30 | International Business Machines Corporation | Structure of vertical strained silicon devices |
US6869866B1 (en) | 2003-09-22 | 2005-03-22 | International Business Machines Corporation | Silicide proximity structures for CMOS device performance improvements |
US7144767B2 (en) * | 2003-09-23 | 2006-12-05 | International Business Machines Corporation | NFETs using gate induced stress modulation |
US6872641B1 (en) * | 2003-09-23 | 2005-03-29 | International Business Machines Corporation | Strained silicon on relaxed sige film with uniform misfit dislocation density |
US7119403B2 (en) * | 2003-10-16 | 2006-10-10 | International Business Machines Corporation | High performance strained CMOS devices |
US7037770B2 (en) * | 2003-10-20 | 2006-05-02 | International Business Machines Corporation | Method of manufacturing strained dislocation-free channels for CMOS |
US7303949B2 (en) * | 2003-10-20 | 2007-12-04 | International Business Machines Corporation | High performance stress-enhanced MOSFETs using Si:C and SiGe epitaxial source/drain and method of manufacture |
US7129126B2 (en) * | 2003-11-05 | 2006-10-31 | International Business Machines Corporation | Method and structure for forming strained Si for CMOS devices |
US7015082B2 (en) * | 2003-11-06 | 2006-03-21 | International Business Machines Corporation | High mobility CMOS circuits |
US7029964B2 (en) | 2003-11-13 | 2006-04-18 | International Business Machines Corporation | Method of manufacturing a strained silicon on a SiGe on SOI substrate |
US7122849B2 (en) * | 2003-11-14 | 2006-10-17 | International Business Machines Corporation | Stressed semiconductor device structures having granular semiconductor material |
US7247534B2 (en) * | 2003-11-19 | 2007-07-24 | International Business Machines Corporation | Silicon device on Si:C-OI and SGOI and method of manufacture |
US7235848B2 (en) * | 2003-12-09 | 2007-06-26 | Applied Intellectual Properties Co., Ltd. | Nonvolatile memory with spacer trapping structure |
US7198995B2 (en) * | 2003-12-12 | 2007-04-03 | International Business Machines Corporation | Strained finFETs and method of manufacture |
US7247912B2 (en) * | 2004-01-05 | 2007-07-24 | International Business Machines Corporation | Structures and methods for making strained MOSFETs |
US7202132B2 (en) | 2004-01-16 | 2007-04-10 | International Business Machines Corporation | Protecting silicon germanium sidewall with silicon for strained silicon/silicon germanium MOSFETs |
US7381609B2 (en) | 2004-01-16 | 2008-06-03 | International Business Machines Corporation | Method and structure for controlling stress in a transistor channel |
US7118999B2 (en) * | 2004-01-16 | 2006-10-10 | International Business Machines Corporation | Method and apparatus to increase strain effect in a transistor channel |
US7923782B2 (en) | 2004-02-27 | 2011-04-12 | International Business Machines Corporation | Hybrid SOI/bulk semiconductor transistors |
US7205206B2 (en) * | 2004-03-03 | 2007-04-17 | International Business Machines Corporation | Method of fabricating mobility enhanced CMOS devices |
US7504693B2 (en) * | 2004-04-23 | 2009-03-17 | International Business Machines Corporation | Dislocation free stressed channels in bulk silicon and SOI CMOS devices by gate stress engineering |
US7033879B2 (en) * | 2004-04-29 | 2006-04-25 | Texas Instruments Incorporated | Semiconductor device having optimized shallow junction geometries and method for fabrication thereof |
US7223994B2 (en) * | 2004-06-03 | 2007-05-29 | International Business Machines Corporation | Strained Si on multiple materials for bulk or SOI substrates |
US7037794B2 (en) * | 2004-06-09 | 2006-05-02 | International Business Machines Corporation | Raised STI process for multiple gate ox and sidewall protection on strained Si/SGOI structure with elevated source/drain |
TWI463526B (zh) * | 2004-06-24 | 2014-12-01 | Ibm | 改良具應力矽之cmos元件的方法及以該方法製備而成的元件 |
US7227205B2 (en) * | 2004-06-24 | 2007-06-05 | International Business Machines Corporation | Strained-silicon CMOS device and method |
US7288443B2 (en) * | 2004-06-29 | 2007-10-30 | International Business Machines Corporation | Structures and methods for manufacturing p-type MOSFET with graded embedded silicon-germanium source-drain and/or extension |
US7229041B2 (en) * | 2004-06-30 | 2007-06-12 | Ohio Central Steel Company | Lifting lid crusher |
US7217949B2 (en) * | 2004-07-01 | 2007-05-15 | International Business Machines Corporation | Strained Si MOSFET on tensile-strained SiGe-on-insulator (SGOI) |
US6991998B2 (en) | 2004-07-02 | 2006-01-31 | International Business Machines Corporation | Ultra-thin, high quality strained silicon-on-insulator formed by elastic strain transfer |
US7384829B2 (en) * | 2004-07-23 | 2008-06-10 | International Business Machines Corporation | Patterned strained semiconductor substrate and device |
US7193254B2 (en) * | 2004-11-30 | 2007-03-20 | International Business Machines Corporation | Structure and method of applying stresses to PFET and NFET transistor channels for improved performance |
US7238565B2 (en) | 2004-12-08 | 2007-07-03 | International Business Machines Corporation | Methodology for recovery of hot carrier induced degradation in bipolar devices |
US7262087B2 (en) * | 2004-12-14 | 2007-08-28 | International Business Machines Corporation | Dual stressed SOI substrates |
US7173312B2 (en) * | 2004-12-15 | 2007-02-06 | International Business Machines Corporation | Structure and method to generate local mechanical gate stress for MOSFET channel mobility modification |
US7274084B2 (en) * | 2005-01-12 | 2007-09-25 | International Business Machines Corporation | Enhanced PFET using shear stress |
US20060160317A1 (en) * | 2005-01-18 | 2006-07-20 | International Business Machines Corporation | Structure and method to enhance stress in a channel of cmos devices using a thin gate |
US7432553B2 (en) * | 2005-01-19 | 2008-10-07 | International Business Machines Corporation | Structure and method to optimize strain in CMOSFETs |
US7220626B2 (en) * | 2005-01-28 | 2007-05-22 | International Business Machines Corporation | Structure and method for manufacturing planar strained Si/SiGe substrate with multiple orientations and different stress levels |
US7256081B2 (en) * | 2005-02-01 | 2007-08-14 | International Business Machines Corporation | Structure and method to induce strain in a semiconductor device channel with stressed film under the gate |
US7224033B2 (en) | 2005-02-15 | 2007-05-29 | International Business Machines Corporation | Structure and method for manufacturing strained FINFET |
US7179715B2 (en) * | 2005-03-22 | 2007-02-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for controlling spacer oxide loss |
US7545004B2 (en) * | 2005-04-12 | 2009-06-09 | International Business Machines Corporation | Method and structure for forming strained devices |
US7470943B2 (en) * | 2005-08-22 | 2008-12-30 | International Business Machines Corporation | High performance MOSFET comprising a stressed gate metal silicide layer and method of fabricating the same |
US7544577B2 (en) * | 2005-08-26 | 2009-06-09 | International Business Machines Corporation | Mobility enhancement in SiGe heterojunction bipolar transistors |
US7202513B1 (en) * | 2005-09-29 | 2007-04-10 | International Business Machines Corporation | Stress engineering using dual pad nitride with selective SOI device architecture |
US20070096170A1 (en) * | 2005-11-02 | 2007-05-03 | International Business Machines Corporation | Low modulus spacers for channel stress enhancement |
US20070099360A1 (en) * | 2005-11-03 | 2007-05-03 | International Business Machines Corporation | Integrated circuits having strained channel field effect transistors and methods of making |
US7655511B2 (en) * | 2005-11-03 | 2010-02-02 | International Business Machines Corporation | Gate electrode stress control for finFET performance enhancement |
US7785950B2 (en) * | 2005-11-10 | 2010-08-31 | International Business Machines Corporation | Dual stress memory technique method and related structure |
US7348638B2 (en) * | 2005-11-14 | 2008-03-25 | International Business Machines Corporation | Rotational shear stress for charge carrier mobility modification |
US7709317B2 (en) * | 2005-11-14 | 2010-05-04 | International Business Machines Corporation | Method to increase strain enhancement with spacerless FET and dual liner process |
US7564081B2 (en) | 2005-11-30 | 2009-07-21 | International Business Machines Corporation | finFET structure with multiply stressed gate electrode |
US7776695B2 (en) * | 2006-01-09 | 2010-08-17 | International Business Machines Corporation | Semiconductor device structure having low and high performance devices of same conductive type on same substrate |
US7863197B2 (en) | 2006-01-09 | 2011-01-04 | International Business Machines Corporation | Method of forming a cross-section hourglass shaped channel region for charge carrier mobility modification |
US7635620B2 (en) * | 2006-01-10 | 2009-12-22 | International Business Machines Corporation | Semiconductor device structure having enhanced performance FET device |
US20070158743A1 (en) * | 2006-01-11 | 2007-07-12 | International Business Machines Corporation | Thin silicon single diffusion field effect transistor for enhanced drive performance with stress film liners |
US7473593B2 (en) * | 2006-01-11 | 2009-01-06 | International Business Machines Corporation | Semiconductor transistors with expanded top portions of gates |
US7691698B2 (en) * | 2006-02-21 | 2010-04-06 | International Business Machines Corporation | Pseudomorphic Si/SiGe/Si body device with embedded SiGe source/drain |
JP5076119B2 (ja) * | 2006-02-22 | 2012-11-21 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
US20070197011A1 (en) * | 2006-02-22 | 2007-08-23 | Freescale Semiconductor Inc. | Method for improving self-aligned silicide extendibility with spacer recess using a stand-alone recess etch integration |
US8461009B2 (en) * | 2006-02-28 | 2013-06-11 | International Business Machines Corporation | Spacer and process to enhance the strain in the channel with stress liner |
US20070224808A1 (en) * | 2006-03-23 | 2007-09-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Silicided gates for CMOS devices |
US7615418B2 (en) * | 2006-04-28 | 2009-11-10 | International Business Machines Corporation | High performance stress-enhance MOSFET and method of manufacture |
US7521307B2 (en) * | 2006-04-28 | 2009-04-21 | International Business Machines Corporation | CMOS structures and methods using self-aligned dual stressed layers |
US7608489B2 (en) * | 2006-04-28 | 2009-10-27 | International Business Machines Corporation | High performance stress-enhance MOSFET and method of manufacture |
US8853746B2 (en) * | 2006-06-29 | 2014-10-07 | International Business Machines Corporation | CMOS devices with stressed channel regions, and methods for fabricating the same |
US7790540B2 (en) | 2006-08-25 | 2010-09-07 | International Business Machines Corporation | Structure and method to use low k stress liner to reduce parasitic capacitance |
US7462522B2 (en) * | 2006-08-30 | 2008-12-09 | International Business Machines Corporation | Method and structure for improving device performance variation in dual stress liner technology |
US8754446B2 (en) * | 2006-08-30 | 2014-06-17 | International Business Machines Corporation | Semiconductor structure having undercut-gate-oxide gate stack enclosed by protective barrier material |
US8115254B2 (en) | 2007-09-25 | 2012-02-14 | International Business Machines Corporation | Semiconductor-on-insulator structures including a trench containing an insulator stressor plug and method of fabricating same |
US8492846B2 (en) | 2007-11-15 | 2013-07-23 | International Business Machines Corporation | Stress-generating shallow trench isolation structure having dual composition |
US8123817B2 (en) * | 2007-12-28 | 2012-02-28 | Boston Scientific Scimed, Inc. | Meshes of variable construction |
US9318571B2 (en) * | 2009-02-23 | 2016-04-19 | United Microelectronics Corp. | Gate structure and method for trimming spacers |
US8598006B2 (en) * | 2010-03-16 | 2013-12-03 | International Business Machines Corporation | Strain preserving ion implantation methods |
US8288296B2 (en) | 2010-04-20 | 2012-10-16 | International Business Machines Corporation | Integrated circuit with replacement metal gates and dual dielectrics |
CN101986435B (zh) * | 2010-06-25 | 2012-12-19 | 中国科学院上海微***与信息技术研究所 | 防止浮体及自加热效应的mos器件结构的制造方法 |
US9064803B2 (en) * | 2011-07-25 | 2015-06-23 | Globalfoundries Singapore Pte. Ltd. | Split-gate flash memory exhibiting reduced interference |
US20150200279A1 (en) * | 2014-01-12 | 2015-07-16 | United Microelectronics Corp. | Method of manufacturing memory cell |
US10147649B2 (en) * | 2016-05-27 | 2018-12-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device structure with gate stack and method for forming the same |
US10297614B2 (en) | 2016-08-09 | 2019-05-21 | International Business Machines Corporation | Gate top spacer for FinFET |
US10438857B2 (en) | 2016-11-22 | 2019-10-08 | Samsung Electronics Co., Ltd. | Semiconductor device and method of manufacturing thereof |
US11452541B2 (en) | 2016-12-22 | 2022-09-27 | Scientia Vascular, Inc. | Intravascular device having a selectively deflectable tip |
CN108987261B (zh) * | 2017-06-01 | 2022-05-17 | 联华电子股份有限公司 | 半导体结构及其制造方法 |
JP7255982B2 (ja) | 2017-08-09 | 2023-04-11 | 三ツ星ベルト株式会社 | 六角ベルト |
CN113539805A (zh) * | 2020-04-13 | 2021-10-22 | 华邦电子股份有限公司 | 半导体结构及其形成方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0837301A (ja) * | 1994-07-22 | 1996-02-06 | Nec Corp | 半導体装置及びその製造方法 |
JPH0974199A (ja) * | 1995-01-12 | 1997-03-18 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
JPH09148568A (ja) * | 1995-11-21 | 1997-06-06 | Seiko Epson Corp | 半導体装置の製造方法 |
JPH09181306A (ja) * | 1995-12-22 | 1997-07-11 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
JPH10242464A (ja) * | 1996-12-27 | 1998-09-11 | Nec Corp | 半導体装置の製造方法 |
JPH1174509A (ja) * | 1997-08-27 | 1999-03-16 | Samsung Electron Co Ltd | Mosfetトランジスタ及びその製造方法 |
Family Cites Families (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4638347A (en) * | 1982-12-07 | 1987-01-20 | International Business Machines Corporation | Gate electrode sidewall isolation spacer for field effect transistors |
US4716131A (en) | 1983-11-28 | 1987-12-29 | Nec Corporation | Method of manufacturing semiconductor device having polycrystalline silicon layer with metal silicide film |
JPS62122173A (ja) * | 1985-11-20 | 1987-06-03 | Fujitsu Ltd | 半導体装置 |
JPS62143473A (ja) * | 1985-12-18 | 1987-06-26 | Hitachi Ltd | 半導体装置 |
US4912061A (en) | 1988-04-04 | 1990-03-27 | Digital Equipment Corporation | Method of forming a salicided self-aligned metal oxide semiconductor device using a disposable silicon nitride spacer |
JPH0258874A (ja) * | 1988-08-24 | 1990-02-28 | Nec Corp | 半導体集積回路装置 |
US4876213A (en) | 1988-10-31 | 1989-10-24 | Motorola, Inc. | Salicided source/drain structure |
US4951100A (en) * | 1989-07-03 | 1990-08-21 | Motorola, Inc. | Hot electron collector for a LDD transistor |
DE69121535T2 (de) | 1990-12-07 | 1997-01-02 | At & T Corp | Feldeffekttransistor mit inverser T-förmiger Silizid-Torelektrode |
TW203148B (ja) | 1991-03-27 | 1993-04-01 | American Telephone & Telegraph | |
JPH0590293A (ja) * | 1991-07-19 | 1993-04-09 | Toshiba Corp | 半導体装置およびその製造方法 |
JP2914026B2 (ja) * | 1992-08-10 | 1999-06-28 | 日本電気株式会社 | 半導体装置 |
US5268330A (en) * | 1992-12-11 | 1993-12-07 | International Business Machines Corporation | Process for improving sheet resistance of an integrated circuit device gate |
JPH06338601A (ja) | 1993-05-31 | 1994-12-06 | Toshiba Corp | 半導体装置及びその製造方法 |
JPH0766406A (ja) * | 1993-08-25 | 1995-03-10 | Oki Electric Ind Co Ltd | サリサイド型mosfet及びその製造方法 |
JP2833989B2 (ja) * | 1993-12-30 | 1998-12-09 | 日本電気株式会社 | 半導体装置の製造方法 |
US5372960A (en) * | 1994-01-04 | 1994-12-13 | Motorola, Inc. | Method of fabricating an insulated gate semiconductor device |
KR960030440A (ko) | 1995-01-12 | 1996-08-17 | 모리시다 요이치 | 반도체 장치 및 그 제조방법 |
KR960042942A (ko) * | 1995-05-04 | 1996-12-21 | 빈센트 비.인그라시아 | 반도체 디바이스 형성 방법 |
US5783475A (en) | 1995-11-13 | 1998-07-21 | Motorola, Inc. | Method of forming a spacer |
KR100214468B1 (ko) * | 1995-12-29 | 1999-08-02 | 구본준 | 씨모스 소자 제조방법 |
US5747373A (en) | 1996-09-24 | 1998-05-05 | Taiwan Semiconductor Manufacturing Company Ltd. | Nitride-oxide sidewall spacer for salicide formation |
US5763311A (en) * | 1996-11-04 | 1998-06-09 | Advanced Micro Devices, Inc. | High performance asymmetrical MOSFET structure and method of making the same |
US5847428A (en) | 1996-12-06 | 1998-12-08 | Advanced Micro Devices, Inc. | Integrated circuit gate conductor which uses layered spacers to produce a graded junction |
US5882973A (en) * | 1997-01-27 | 1999-03-16 | Advanced Micro Devices, Inc. | Method for forming an integrated circuit having transistors of dissimilarly graded junction profiles |
JPH10223889A (ja) * | 1997-02-04 | 1998-08-21 | Mitsubishi Electric Corp | Misトランジスタおよびその製造方法 |
US5783479A (en) * | 1997-06-23 | 1998-07-21 | National Science Council | Structure and method for manufacturing improved FETs having T-shaped gates |
US6013569A (en) * | 1997-07-07 | 2000-01-11 | United Microelectronics Corp. | One step salicide process without bridging |
KR100302187B1 (ko) * | 1997-10-08 | 2001-11-22 | 윤종용 | 반도체장치제조방법 |
US6180988B1 (en) * | 1997-12-04 | 2001-01-30 | Texas Instruments-Acer Incorporated | Self-aligned silicided MOSFETS with a graded S/D junction and gate-side air-gap structure |
US6048784A (en) * | 1997-12-17 | 2000-04-11 | Texas Instruments Incorporated | Transistor having an improved salicided gate and method of construction |
JPH11204784A (ja) * | 1998-01-09 | 1999-07-30 | Toshiba Corp | 半導体装置の製造方法 |
US6171959B1 (en) * | 1998-01-20 | 2001-01-09 | Motorola, Inc. | Method for making a semiconductor device |
TW387151B (en) * | 1998-02-07 | 2000-04-11 | United Microelectronics Corp | Field effect transistor structure of integrated circuit and the manufacturing method thereof |
US6071782A (en) | 1998-02-13 | 2000-06-06 | Sharp Laboratories Of America, Inc. | Partial silicidation method to form shallow source/drain junctions |
US6271563B1 (en) * | 1998-07-27 | 2001-08-07 | Advanced Micro Devices, Inc. | MOS transistor with high-K spacer designed for ultra-large-scale integration |
JP2000156502A (ja) * | 1998-09-21 | 2000-06-06 | Texas Instr Inc <Ti> | 集積回路及び方法 |
US6235598B1 (en) * | 1998-11-13 | 2001-05-22 | Intel Corporation | Method of using thick first spacers to improve salicide resistance on polysilicon gates |
US6108988A (en) * | 1998-12-07 | 2000-08-29 | Soft Play, L.L.C. | Spiral climb in surrounding enclosure |
-
1998
- 1998-11-13 US US09/191,729 patent/US6235598B1/en not_active Expired - Lifetime
-
1999
- 1999-03-25 US US09/276,477 patent/US6188117B1/en not_active Expired - Lifetime
- 1999-08-30 US US09/386,495 patent/US6521964B1/en not_active Expired - Lifetime
- 1999-11-04 KR KR10-2001-7006014A patent/KR100522125B1/ko not_active IP Right Cessation
- 1999-12-09 US US09/458,537 patent/US6271096B1/en not_active Expired - Lifetime
- 1999-12-09 US US09/458,357 patent/US6506652B2/en not_active Expired - Lifetime
- 1999-12-09 US US09/458,538 patent/US6268254B1/en not_active Expired - Lifetime
-
2000
- 2000-01-04 US US09/477,764 patent/US7211872B2/en not_active Expired - Lifetime
- 2000-01-04 US US09/476,920 patent/US6509618B2/en not_active Expired - Fee Related
- 2000-01-05 US US09/477,870 patent/US6777760B1/en not_active Expired - Lifetime
- 2000-01-05 US US09/477,869 patent/US6593633B2/en not_active Expired - Lifetime
-
2010
- 2010-10-26 JP JP2010239690A patent/JP5576239B2/ja not_active Expired - Lifetime
-
2014
- 2014-05-02 JP JP2014095009A patent/JP5902748B2/ja not_active Expired - Lifetime
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0837301A (ja) * | 1994-07-22 | 1996-02-06 | Nec Corp | 半導体装置及びその製造方法 |
JPH0974199A (ja) * | 1995-01-12 | 1997-03-18 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
JPH09148568A (ja) * | 1995-11-21 | 1997-06-06 | Seiko Epson Corp | 半導体装置の製造方法 |
JPH09181306A (ja) * | 1995-12-22 | 1997-07-11 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
JPH10242464A (ja) * | 1996-12-27 | 1998-09-11 | Nec Corp | 半導体装置の製造方法 |
JPH1174509A (ja) * | 1997-08-27 | 1999-03-16 | Samsung Electron Co Ltd | Mosfetトランジスタ及びその製造方法 |
Also Published As
Publication number | Publication date |
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JP5902748B2 (ja) | 2016-04-13 |
US6593633B2 (en) | 2003-07-15 |
KR20010080433A (ko) | 2001-08-22 |
US6521964B1 (en) | 2003-02-18 |
US20020082624A1 (en) | 2002-06-27 |
US6506652B2 (en) | 2003-01-14 |
US6271096B1 (en) | 2001-08-07 |
US7211872B2 (en) | 2007-05-01 |
KR100522125B1 (ko) | 2005-10-19 |
US20010045607A1 (en) | 2001-11-29 |
JP5576239B2 (ja) | 2014-08-20 |
US20010045586A1 (en) | 2001-11-29 |
US6509618B2 (en) | 2003-01-21 |
JP2014195091A (ja) | 2014-10-09 |
US6188117B1 (en) | 2001-02-13 |
US6268254B1 (en) | 2001-07-31 |
US6235598B1 (en) | 2001-05-22 |
US6777760B1 (en) | 2004-08-17 |
US20020003268A1 (en) | 2002-01-10 |
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