JP2010516060A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2010516060A JP2010516060A JP2009545646A JP2009545646A JP2010516060A JP 2010516060 A JP2010516060 A JP 2010516060A JP 2009545646 A JP2009545646 A JP 2009545646A JP 2009545646 A JP2009545646 A JP 2009545646A JP 2010516060 A JP2010516060 A JP 2010516060A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 163
- 239000012535 impurity Substances 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims description 41
- 239000003989 dielectric material Substances 0.000 claims description 13
- IRPGOXJVTQTAAN-UHFFFAOYSA-N 2,2,3,3,3-pentafluoropropanal Chemical compound FC(F)(F)C(F)(F)C=O IRPGOXJVTQTAAN-UHFFFAOYSA-N 0.000 claims description 10
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminum fluoride Inorganic materials F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 8
- 230000015556 catabolic process Effects 0.000 description 27
- 230000002441 reversible effect Effects 0.000 description 26
- 230000005684 electric field Effects 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- 238000002513 implantation Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000036961 partial effect Effects 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 229910016569 AlF 3 Inorganic materials 0.000 description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052792 caesium Inorganic materials 0.000 description 2
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 239000011591 potassium Substances 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- IYLGZMTXKJYONK-ACLXAEORSA-N (12s,15r)-15-hydroxy-11,16-dioxo-15,20-dihydrosenecionan-12-yl acetate Chemical compound O1C(=O)[C@](CC)(O)C[C@@H](C)[C@](C)(OC(C)=O)C(=O)OCC2=CCN3[C@H]2[C@H]1CC3 IYLGZMTXKJYONK-ACLXAEORSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- -1 cesium or potassium Chemical class 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000005094 computer simulation Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- IYLGZMTXKJYONK-UHFFFAOYSA-N ruwenine Natural products O1C(=O)C(CC)(O)CC(C)C(C)(OC(C)=O)C(=O)OCC2=CCN3C2C1CC3 IYLGZMTXKJYONK-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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Abstract
Description
本出願は、合衆国法典第35巻第119(e)の下で、2007年1月9日に出願された米国暫定特許出願60/879,434号、名称「Power MOS Transistor」の利益を主張するものであり、参照することによりその全体の内容が本願明細書に組み込まれる。
[背景技術]
本発明は、電子装置に関し、より具体的には、高電圧を維持するように適合された半導体装置に関する。
[発明の概要]
半導体構造体は、本発明の一実施形態によれば、部分的に、多数の半導体領域と、少なくとも一対の誘電体領域と、一対の端子とを含む。半導体構造体の第1および第2の領域は、それぞれ第1および第2の端子に結合される。半導体構造体の第3の領域は、単一の導電型であり、第1および第2の領域間に配置される。誘電体領域は、第3の領域内に延在する。第3の領域内に存在する不純物のドープ濃度、および誘電体領域間の距離は、半導体構造体の電気的特性を画定する。半導体構造体の電気的特性は、誘電体領域の幅に依存しない。第1および第2の領域は、反対の導電型である。
一実施形態では、第1および第2の領域は、それぞれn+型およびp+型領域であり、第1および第2の端子は、それぞれカソードおよびアノード端子である。一実施形態では、第3の領域は、p型領域である。別の実施形態では、第3の領域は、n型領域である。一実施形態では、第3の領域は、第2の領域の上方に形成され、第1の領域は、第3の領域の上方に形成される。一実施形態では、第3の領域は、第2の領域の上方に形成され、第1の領域は、第3の領域の上方に形成される。一実施形態では、誘電体領域のそれぞれは、誘電体領域の一端の近くの幅が、誘電体領域の他端よりも広くなるようにテーパ状である。
一実施形態では、第1および第2の領域は、それぞれn+型およびp+型領域であり、第1および第2の端子は、それぞれカソードおよびアノード端子である。一実施形態では、第3の領域は、p型領域である。一実施形態では、第3の領域は、p型領域である。別の実施形態では、第3の領域は、n型領域である。一実施形態では、第3の領域は、第2の領域の上方に形成され、第1の領域は、第3の領域の上方に形成される。一実施形態では、第3の領域は、第2の領域の上方に形成され、第1の領域は、第3の領域の上方に形成される。一実施形態では、誘電体領域のそれぞれは、誘電体領域の一端の近くの幅が、誘電体領域の他端よりも広くなるようにテーパ状である。
Claims (71)
- 半導体構造体であって、
前記構造体の第1の端子に結合された第1の領域と、
前記構造体の第2の端子に結合された第2の領域と、
前記第1の領域と第2の領域との間に配置された単一の導電型の第3の領域と、
前記第3の領域の深さに沿って第1の距離だけ延在する、少なくとも第1および第2の誘電体領域と、
を備え、前記第3の領域内に存在する不純物のドープ濃度、および前記少なくとも第1の誘電体領域と第2の誘電体領域との間の距離は、前記半導体構造体の電気的特性を画定し、前記電気的特性は、前記誘電体領域の幅に依存せず、かつ、前記第1および第2の領域は、相反する導電型である、
半導体構造体。 - 前記少なくとも第1および第2の誘電体領域は、前記第1および第2の領域内に延在する、請求項1に記載の半導体構造体。
- 前記少なくとも第1および第2の誘電体領域の表面に平行な線に沿った、前記第3の領域内の不純物の集積ドープ密度は、約1×1012/cm2から約5×1012/cm2までの範囲である、請求項1に記載の半導体構造体。
- 前記少なくとも第1および第2の誘電体領域のそれぞれは、第1および第2の材料をさらに含む、請求項1に記載の半導体構造体。
- 前記少なくとも第1および第2の誘電体領域のそれぞれは、注入された正の電荷をさらに備える、請求項1に記載の半導体構造体。
- 前記少なくとも第1および第2の誘電体領域のそれぞれは、注入された負の電荷をさらに備える、請求項1に記載の半導体構造体。
- 前記少なくとも第1および第2の誘電体領域のそれぞれにおける前記第2の材料は、フッ化アルミニウムを含む、請求項4に記載の半導体構造体。
- 前記少なくとも第1および第2の誘電体領域のそれぞれは、第3の材料をさらに含み、前記第3の材料は、誘電体材料である、請求項4に記載の半導体構造体。
- 各誘電体領域内の前記第1および第3の材料は、同じ材料である、請求項8に記載の半導体構造体。
- 前記第1および第2の領域は、それぞれp+型およびn+型領域であり、前記第1および第2の端子は、それぞれアノードおよびカソード端子であり、前記第3の領域は、p型領域である、請求項1に記載の半導体構造体。
- 前記第3の領域は、前記第2の領域の上方に形成され、前記第1の領域は、前記第3の領域の上方に形成される、請求項10に記載の半導体構造体。
- 前記第1および第2の領域は、それぞれp+型およびn+型領域であり、前記第1および第2の端子は、それぞれアノードおよびカソード端子であり、前記第3の領域は、n型領域である、請求項1に記載の半導体構造体。
- 前記第3の領域は、前記第2の領域の上方に形成され、前記第1の領域は、前記第3の領域の上方に形成される、請求項12に記載の半導体構造体。
- 前記少なくとも第1および第2の誘電体領域は、互いに隔離される、請求項1に記載の半導体構造体。
- 前記半導体構造体は、前記第2の領域と前記第3の領域との間に配置された第4の領域をさらに備え、前記第2の領域および第4の領域は、同じ導電型である、請求項1に記載の半導体構造体。
- 前記第1および第2の領域は、それぞれn+型およびp+型領域であり、前記第1および第2の端子は、それぞれカソードおよびアノード端子であり、前記第3の領域は、p型領域である、請求項1に記載の半導体構造体。
- 前記第3の領域は、前記第2の領域の上方に形成され、前記第1の領域は、前記第3の領域の上方に形成される、請求項14に記載の半導体構造体。
- 前記第1および第2の領域は、それぞれn+型およびp+型領域であり、前記第1および第2の端子は、それぞれカソードおよびアノード端子であり、前記第3の領域は、n型領域である、請求項1に記載の半導体構造体。
- 前記第3の領域は、前記第2の領域の上方に形成され、前記第1の領域は、前記第3の領域の上方に形成される、請求項16に記載の半導体構造体。
- 前記少なくとも第1および第2の誘電体領域のそれぞれは、前記誘電体領域の一端近くが、前記誘電体領域の他端よりも幅が広くなるようにテーパ状である、請求項1に記載の半導体構造体。
- 前記第1、第2、および第3の領域は、前記半導体構造体が形成される半導体基板の同じ表面に沿って形成される、請求項1に記載の半導体構造体。
- 前記第2の領域が形成される第4の領域をさらに備え、前記第3の領域は、前記第1および第4の領域に隣接する、請求項21に記載の半導体構造体。
- 前記第1の領域は、p+型領域であり、前記第2の領域は、n+型領域であり、前記第3の領域は、p型領域であり、前記第4の領域は、n型領域である、請求項22に記載の半導体構造体。
- 前記第1の領域は、p+型領域であり、前記第2の領域は、n+型領域であり、前記第3の領域は、n型領域であり、前記第4の領域は、p型領域である、請求項22に記載の半導体構造体。
- 半導体構造体であって、
前記構造体の第1の端子に結合された第1の領域と、
前記構造体の第2の端子に結合された第2の領域と、
前記第1の領域と第2の領域との間に配置された第3の領域と、
前記第3の領域の深さに沿って第1の距離だけ延在する、少なくとも第1および第2の誘電体領域と、
を備え、前記第1および第2の領域は、相反する導電型であり、前記少なくとも第1および第2の誘電体領域、または前記少なくとも第1および第2の誘電体領域のそれぞれと、前記第3の領域との間の界面領域は、意図的に導入された電荷を含む、
半導体構造体。 - 前記少なくとも第1および第2の誘電体領域は、前記第1および第2の領域内に延在する、請求項25に記載の半導体構造体。
- 前記少なくとも第1および第2の誘電体領域の表面に平行な線に沿った、前記第3の領域内の不純物の集積ドープ密度は、約1×1012/cm2から約5×1012/cm2までの範囲である、請求項25に記載の半導体構造体。
- 前記少なくとも第1および第2の誘電体領域のそれぞれは、第1および第2の材料をさらに含む、請求項25に記載の半導体構造体。
- 前記意図的に導入された電荷は、注入された正の電荷である、請求項25に記載の半導体構造体。
- 前記意図的に導入された電荷は、注入された負の電荷である、請求項25に記載の半導体構造体。
- 前記少なくとも第1および第2の誘電体領域のそれぞれにおける前記第2の材料は、フッ化アルミニウムを含む、請求項28に記載の半導体構造体。
- 前記少なくとも第1および第2の誘電体領域のそれぞれは、第3の材料をさらに含み、前記第3の材料は、誘電体材料である、請求項28に記載の半導体構造体。
- 各誘電体領域内の前記第1および第3の材料は、同じ材料である、請求項32に記載の半導体構造体。
- 前記第1および第2の領域は、それぞれp+型およびn+型領域であり、前記第1および第2の端子は、それぞれアノードおよびカソード端子であり、前記第3の領域は、p型領域である、請求項25に記載の半導体構造体。
- 前記第3の領域は、前記第2の領域の上方に形成され、前記第1の領域は、前記第3の領域の上方に形成される、請求項34に記載の半導体構造体。
- 前記第1および第2の領域は、それぞれp+型およびn+型領域であり、前記第1および第2の端子は、それぞれアノードおよびカソード端子であり、前記第3の領域は、n型領域である、請求項25に記載の半導体構造体。
- 前記第3の領域は、前記第2の領域の上方に形成され、前記第1の領域は、前記第3の領域の上方に形成される、請求項36に記載の半導体構造体。
- 前記少なくとも第1および第2の誘電体領域は、互いに隔離される、請求項25に記載の半導体構造体。
- 前記半導体構造体は、前記第2の領域と前記第3の領域との間に配置された第4の領域をさらに備え、前記第2および第4の領域は、同じ導電型である、請求項25に記載の半導体構造体。
- 前記第1および第2の領域は、それぞれn+型およびp+型領域であり、前記第1および第2の端子は、それぞれカソードおよびアノード端子であり、前記第3の領域は、p型領域である、請求項25に記載の半導体構造体。
- 前記第3の領域は、前記第2の領域の上方に形成され、前記第1の領域は、前記第3の領域の上方に形成される、請求項34に記載の半導体構造体。
- 前記第1および第2の領域は、それぞれn+型およびp+型領域であり、前記第1および第2の端子は、それぞれカソードおよびアノード端子であり、前記第3の領域は、n型領域である、請求項25に記載の半導体構造体。
- 前記第3の領域は、前記第2の領域の上方に形成され、前記第1の領域は、前記第3の領域の上方に形成される、請求項34に記載の半導体構造体。
- 前記少なくとも第1および第2の誘電体領域のそれぞれは、前記誘電体領域の一端近くが、前記誘電体領域の他端よりも幅が広くなるようにテーパ状である、請求項34に記載の半導体構造体。
- 前記第1、第2、および第3の領域は、前記半導体構造体が形成される半導体基板の同じ表面に沿って形成される、請求項34に記載の半導体構造体。
- 前記第2の領域が形成される第4の領域をさらに備え、前記第3の領域は、前記第1および第4の領域に隣接する、請求項45に記載の半導体構造体。
- 前記第1の領域は、p+型領域であり、前記第2の領域は、n+型領域であり、前記第3の領域は、p型領域であり、前記第4の領域は、n型領域である、請求項46に記載の半導体構造体。
- 前記第1の領域は、p+型領域であり、前記第2の領域は、n+型領域であり、前記第3の領域は、n型領域であり、前記第4の領域は、p型領域である、請求項46に記載の半導体構造体。
- 半導体構造体であって、
前記構造体の第1の端子に結合された第1の領域と、
前記構造体の第2の端子に結合された第2の領域と、
前記第1の領域と第2の領域との間に配置された第3の領域と、
前記第3の領域の深さに沿って第1の距離だけ延在し、前記第3の領域の導電型とは相反する導電型を有する第4の領域であって、前記第1および第2に隣接する第4の領域と、
前記第3の領域の深さに沿って第2の距離だけ延在する少なくとも第1および第2の誘電体領域と、
を備え、前記第1および第2の領域は、相反する導電型であり、前記第4の領域は、前記少なくとも第1および第2の誘電体領域の一部を囲み、前記少なくとも第1および第2の誘電体領域、または前記少なくとも第1および第2の誘電体領域のそれぞれと、前記第4の領域との間の界面領域は、意図的に導入された電荷を含む、
半導体構造体。 - 前記少なくとも第1および第2の誘電体領域は、前記第1および第2の領域内に延在する、請求項49に記載の半導体構造体。
- 前記少なくとも第1および第2の誘電体領域のそれぞれは、第1および第2の材料をさらに含む、請求項49に記載の半導体構造体。
- 前記意図的に導入された電荷は、注入された正の電荷である、請求項49に記載の半導体構造体。
- 前記意図的に導入された電荷は、注入された負の電荷である、請求項49に記載の半導体構造体。
- 前記少なくとも第1および第2の誘電体領域のそれぞれにおける前記第2の材料は、フッ化アルミニウムを含む、請求項51に記載の半導体構造体。
- 前記少なくとも第1および第2の誘電体領域のそれぞれは、第3の材料をさらに含み、前記第3の材料は、誘電体材料である、請求項51に記載の半導体構造体。
- 各誘電体領域内の前記第1および第3の材料は、同じ材料である、請求項55に記載の半導体構造体。
- 前記第1および第2の領域は、それぞれp+型およびn+型領域であり、前記第1および第2の端子は、それぞれアノードおよびカソード端子であり、前記第3の領域は、p型領域である、請求項49に記載の半導体構造体。
- 前記第3の領域は、前記第2の領域の上方に形成され、前記第1の領域は、前記第3の領域の上方に形成される、請求項57に記載の半導体構造体。
- 前記第1および第2の領域は、それぞれp+型およびn+型領域であり、前記第1および第2の端子は、それぞれアノードおよびカソード端子であり、前記第3の領域は、n型領域である、請求項49に記載の半導体構造体。
- 前記第3の領域は、前記第2の領域の上方に形成され、前記第1の領域は、前記第3の領域の上方に形成される、請求項59に記載の半導体構造体。
- 前記少なくとも第1および第2の誘電体領域は、互いに隔離される、請求項49に記載の半導体構造体。
- 前記半導体構造体は、前記第2、前記第3、および前記第4の領域間に配置された第5の領域をさらに備え、前記第2および第5の領域は、同じ導電型である、請求項49に記載の半導体構造体。
- 前記第1および第2の領域は、それぞれn+型およびp+型領域であり、前記第1および第2の端子は、それぞれカソードおよびアノード端子であり、前記第3の領域は、p型領域である、請求項49に記載の半導体構造体。
- 前記第3の領域は、前記第2の領域の上方に形成され、前記第1の領域は、前記第3の領域の上方に形成される、請求項63に記載の半導体構造体。
- 前記第1および第2の領域は、それぞれn+型およびp+型領域であり、前記第1および第2の端子は、それぞれカソードおよびアノード端子であり、前記第3の領域は、n型領域である、請求項49に記載の半導体構造体。
- 前記第3の領域は、前記第2の領域の上方に形成され、前記第1の領域は、前記第3の領域の上方に形成される、請求項65に記載の半導体構造体。
- 前記少なくとも第1および第2の誘電体領域のそれぞれは、前記誘電体領域の一端近くが、前記誘電体領域の他端よりも幅が広くなるようにテーパ状である、請求項49に記載の半導体構造体。
- 前記第1、第2、および第3の領域は、前記半導体構造体が形成される半導体基板の同じ表面に沿って形成される、請求項49に記載の半導体構造体。
- 前記第2の領域が形成される第5の領域をさらに備え、前記第3の領域は、前記第1および第5の領域に隣接する、請求項68に記載の半導体構造体。
- 前記第1の領域は、p+型領域であり、前記第2の領域は、n+型領域であり、前記第3の領域は、p型領域であり、前記第4の領域は、n型領域である、請求項69に記載の半導体構造体。
- 前記第1の領域は、p+型領域であり、前記第2の領域は、n+型領域であり、前記第3の領域は、n型領域であり、前記第4の領域は、p型領域である、請求項69に記載の半導体構造体。
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Cited By (2)
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JP2015195366A (ja) * | 2014-03-17 | 2015-11-05 | 株式会社東芝 | 半導体装置 |
US10141455B2 (en) | 2014-03-17 | 2018-11-27 | Kabushiki Kaisha Toshiba | Semiconductor device |
Families Citing this family (183)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6838722B2 (en) * | 2002-03-22 | 2005-01-04 | Siliconix Incorporated | Structures of and methods of fabricating trench-gated MIS devices |
US8093621B2 (en) * | 2008-12-23 | 2012-01-10 | Power Integrations, Inc. | VTS insulated gate bipolar transistor |
US9437729B2 (en) * | 2007-01-08 | 2016-09-06 | Vishay-Siliconix | High-density power MOSFET with planarized metalization |
CN101641763B (zh) * | 2007-01-09 | 2012-07-04 | 威力半导体有限公司 | 半导体器件及其制造方法 |
JP2008235788A (ja) * | 2007-03-23 | 2008-10-02 | Sanyo Electric Co Ltd | 絶縁ゲート型半導体装置 |
US9947770B2 (en) | 2007-04-03 | 2018-04-17 | Vishay-Siliconix | Self-aligned trench MOSFET and method of manufacture |
JP2009026809A (ja) * | 2007-07-17 | 2009-02-05 | Toyota Motor Corp | 半導体装置とその製造方法 |
US9484451B2 (en) | 2007-10-05 | 2016-11-01 | Vishay-Siliconix | MOSFET active area and edge termination area charge balance |
US8710568B2 (en) * | 2007-10-24 | 2014-04-29 | Denso Corporation | Semiconductor device having a plurality of elements on one semiconductor substrate and method of manufacturing the same |
KR101196791B1 (ko) | 2008-03-13 | 2012-11-05 | 소이텍 | 절연 매몰층 내에 차징된 영역을 갖는 기판 |
WO2009148695A2 (en) * | 2008-06-02 | 2009-12-10 | Maxpower Semiconductor Inc. | Edge termination for semiconductor devices |
WO2010008617A1 (en) * | 2008-07-15 | 2010-01-21 | Maxpower Semiconductor Inc. | Mosfet switch with embedded electrostatic charge |
WO2010010543A1 (en) * | 2008-07-25 | 2010-01-28 | Nxp B.V. | A trench-gate semiconductor device |
US7960783B2 (en) * | 2008-08-25 | 2011-06-14 | Maxpower Semiconductor Inc. | Devices containing permanent charge |
US8022474B2 (en) * | 2008-09-30 | 2011-09-20 | Infineon Technologies Austria Ag | Semiconductor device |
TWI387106B (zh) * | 2008-10-16 | 2013-02-21 | Vanguard Int Semiconduct Corp | 閘極絕緣雙接面電晶體(igbt)靜電放電防護元件 |
US8378416B2 (en) * | 2008-12-01 | 2013-02-19 | Maxpower Semiconductor, Inc. | MOS-gated power devices, methods, and integrated circuits |
JP2010135594A (ja) * | 2008-12-05 | 2010-06-17 | Toyota Central R&D Labs Inc | ダイオード |
US8278691B2 (en) * | 2008-12-11 | 2012-10-02 | Micron Technology, Inc. | Low power memory device with JFET device structures |
US20100155831A1 (en) * | 2008-12-20 | 2010-06-24 | Power Integrations, Inc. | Deep trench insulated gate bipolar transistor |
US7871882B2 (en) | 2008-12-20 | 2011-01-18 | Power Integrations, Inc. | Method of fabricating a deep trench insulated gate bipolar transistor |
US8049307B2 (en) | 2009-01-23 | 2011-11-01 | Vanguard International Semiconductor Corporation | Insulated gate bipolar transistor (IGBT) electrostatic discharge (ESD) protection devices |
US8319278B1 (en) | 2009-03-31 | 2012-11-27 | Maxpower Semiconductor, Inc. | Power device structures and methods using empty space zones |
US8847307B2 (en) * | 2010-04-13 | 2014-09-30 | Maxpower Semiconductor, Inc. | Power semiconductor devices, methods, and structures with embedded dielectric layers containing permanent charges |
FR2945671A1 (fr) * | 2009-05-18 | 2010-11-19 | St Microelectronics Sa | Photodiode a controle de charge d'interface et procede associe. |
FR2945672A1 (fr) * | 2009-05-18 | 2010-11-19 | St Microelectronics Sa | Photodiode a controle de charge d'interface par implantation et procede associe. |
US8330214B2 (en) * | 2009-05-28 | 2012-12-11 | Maxpower Semiconductor, Inc. | Power semiconductor device |
US10205017B2 (en) * | 2009-06-17 | 2019-02-12 | Alpha And Omega Semiconductor Incorporated | Bottom source NMOS triggered Zener clamp for configuring an ultra-low voltage transient voltage suppressor (TVS) |
WO2011008717A2 (en) * | 2009-07-13 | 2011-01-20 | Maxpower Semiconductor Inc. | Integrated power supplies and combined high-side plus low-side switches |
US9443974B2 (en) | 2009-08-27 | 2016-09-13 | Vishay-Siliconix | Super junction trench power MOSFET device fabrication |
US9431530B2 (en) * | 2009-10-20 | 2016-08-30 | Vishay-Siliconix | Super-high density trench MOSFET |
US9425305B2 (en) | 2009-10-20 | 2016-08-23 | Vishay-Siliconix | Structures of and methods of fabricating split gate MIS devices |
US9419129B2 (en) | 2009-10-21 | 2016-08-16 | Vishay-Siliconix | Split gate semiconductor device with curved gate oxide profile |
US10026835B2 (en) * | 2009-10-28 | 2018-07-17 | Vishay-Siliconix | Field boosted metal-oxide-semiconductor field effect transistor |
DE102009051745B4 (de) * | 2009-11-03 | 2017-09-21 | Austriamicrosystems Ag | Hochvolt-Transistor mit Mehrfach-Dielektrikum und Herstellungsverfahren |
US8198678B2 (en) * | 2009-12-09 | 2012-06-12 | Infineon Technologies Austria Ag | Semiconductor device with improved on-resistance |
WO2011087994A2 (en) * | 2010-01-12 | 2011-07-21 | Maxpower Semiconductor Inc. | Devices, components and methods combining trench field plates with immobile electrostatic charge |
WO2011109559A2 (en) | 2010-03-02 | 2011-09-09 | Kyle Terrill | Structures and methods of fabricating dual gate devices |
JP2011233701A (ja) * | 2010-04-27 | 2011-11-17 | Toshiba Corp | 電力用半導体素子 |
US8390060B2 (en) | 2010-07-06 | 2013-03-05 | Maxpower Semiconductor, Inc. | Power semiconductor devices, structures, and related methods |
US8614478B2 (en) * | 2010-07-26 | 2013-12-24 | Infineon Technologies Austria Ag | Method for protecting a semiconductor device against degradation, a semiconductor device protected against hot charge carriers and a manufacturing method therefor |
US8786012B2 (en) | 2010-07-26 | 2014-07-22 | Infineon Technologies Austria Ag | Power semiconductor device and a method for forming a semiconductor device |
CN102403354A (zh) * | 2010-09-15 | 2012-04-04 | 无锡华润上华半导体有限公司 | Coo1MOS器件及其制造方法 |
CN102130182B (zh) * | 2010-11-03 | 2012-11-21 | 绍兴旭昌科技企业有限公司 | 一种电流调整二极管芯片及其制造方法 |
CN102569384B (zh) * | 2010-12-17 | 2015-07-01 | 无锡华润上华半导体有限公司 | 沟槽mosfet器件及其制作方法 |
US8841664B2 (en) * | 2011-03-04 | 2014-09-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8754472B2 (en) * | 2011-03-10 | 2014-06-17 | O2Micro, Inc. | Methods for fabricating transistors including one or more circular trenches |
US8598654B2 (en) * | 2011-03-16 | 2013-12-03 | Fairchild Semiconductor Corporation | MOSFET device with thick trench bottom oxide |
TW201240087A (en) * | 2011-03-30 | 2012-10-01 | Anpec Electronics Corp | Power device with boundary trench structure |
JP5729331B2 (ja) | 2011-04-12 | 2015-06-03 | 株式会社デンソー | 半導体装置の製造方法及び半導体装置 |
CN102191563B (zh) * | 2011-04-22 | 2012-09-19 | 中国科学院半导体研究所 | 共掺杂的硅基杂质中间带材料的制备方法 |
US8692318B2 (en) * | 2011-05-10 | 2014-04-08 | Nanya Technology Corp. | Trench MOS structure and method for making the same |
US8912595B2 (en) * | 2011-05-12 | 2014-12-16 | Nanya Technology Corp. | Trench MOS structure and method for forming the same |
WO2012158977A2 (en) | 2011-05-18 | 2012-11-22 | Vishay-Siliconix | Semiconductor device |
JP5874893B2 (ja) * | 2011-05-23 | 2016-03-02 | サンケン電気株式会社 | 半導体装置 |
CN102420117A (zh) * | 2011-06-07 | 2012-04-18 | 上海华力微电子有限公司 | 一种改善后栅极pmos负偏压温度不稳定性的方法 |
US8680607B2 (en) * | 2011-06-20 | 2014-03-25 | Maxpower Semiconductor, Inc. | Trench gated power device with multiple trench width and its fabrication process |
US9984894B2 (en) * | 2011-08-03 | 2018-05-29 | Cree, Inc. | Forming SiC MOSFETs with high channel mobility by treating the oxide interface with cesium ions |
US9818859B2 (en) * | 2011-08-26 | 2017-11-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Quasi-vertical power MOSFET and methods of forming the same |
US8816503B2 (en) | 2011-08-29 | 2014-08-26 | Infineon Technologies Austria Ag | Semiconductor device with buried electrode |
CN102569091B (zh) * | 2011-08-29 | 2014-07-23 | 上海华力微电子有限公司 | 一种后栅极单晶体管动态随机存储器的制备方法 |
CN103021853B (zh) * | 2011-09-23 | 2015-11-11 | 北大方正集团有限公司 | 处理半导体器件的方法及半导体器件 |
JP5849882B2 (ja) * | 2011-09-27 | 2016-02-03 | 株式会社デンソー | 縦型半導体素子を備えた半導体装置 |
JP2013093560A (ja) * | 2011-10-06 | 2013-05-16 | Denso Corp | 縦型半導体素子を備えた半導体装置 |
US9431249B2 (en) | 2011-12-01 | 2016-08-30 | Vishay-Siliconix | Edge termination for super junction MOSFET devices |
US9614043B2 (en) | 2012-02-09 | 2017-04-04 | Vishay-Siliconix | MOSFET termination trench |
JP5685736B2 (ja) * | 2012-02-10 | 2015-03-18 | パナソニックIpマネジメント株式会社 | 半導体装置及びその製造方法 |
US9024379B2 (en) * | 2012-02-13 | 2015-05-05 | Maxpower Semiconductor Inc. | Trench transistors and methods with low-voltage-drop shunt to body diode |
CN102569411B (zh) * | 2012-03-02 | 2014-12-03 | 成都芯源***有限公司 | 半导体器件及其制作方法 |
CN103325685A (zh) * | 2012-03-23 | 2013-09-25 | 无锡维赛半导体有限公司 | 深沟槽功率半导体场效应晶体管及其制作方法 |
TWM439885U (en) * | 2012-04-13 | 2012-10-21 | Taiwan Semiconductor Co Ltd | Semiconductor component trench structure |
TWM435716U (en) * | 2012-04-13 | 2012-08-11 | Taiwan Semiconductor Co Ltd | The active region of the trench distributed arrangement of the semiconductor device structure |
DE112013002260B4 (de) * | 2012-04-30 | 2023-03-30 | Vishay-Siliconix | Herstellungsverfahren einer integrierten Schaltung |
US9099519B2 (en) * | 2012-05-23 | 2015-08-04 | Great Wall Semiconductor Corporation | Semiconductor device and method of forming junction enhanced trench power MOSFET |
US9842911B2 (en) | 2012-05-30 | 2017-12-12 | Vishay-Siliconix | Adaptive charge balanced edge termination |
JP2013251397A (ja) * | 2012-05-31 | 2013-12-12 | Denso Corp | 半導体装置 |
US8921931B2 (en) * | 2012-06-04 | 2014-12-30 | Infineon Technologies Austria Ag | Semiconductor device with trench structures including a recombination structure and a fill structure |
JP6061504B2 (ja) * | 2012-06-07 | 2017-01-18 | ルネサスエレクトロニクス株式会社 | 半導体装置及び半導体装置の製造方法 |
US9293357B2 (en) | 2012-07-02 | 2016-03-22 | Texas Instruments Incorporated | Sinker with a reduced width |
US8669611B2 (en) * | 2012-07-11 | 2014-03-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and method for power MOS transistor |
US9130060B2 (en) | 2012-07-11 | 2015-09-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit having a vertical power MOS transistor |
US8829562B2 (en) * | 2012-07-24 | 2014-09-09 | Infineon Technologies Ag | Semiconductor device including a dielectric structure in a trench |
US8598655B1 (en) * | 2012-08-03 | 2013-12-03 | Infineon Technologies Dresden Gmbh | Semiconductor device and method for manufacturing a semiconductor device |
KR101920247B1 (ko) * | 2012-09-17 | 2018-11-20 | 삼성전자 주식회사 | 반도체 장치 및 그 제조 방법 |
US9941403B2 (en) * | 2012-09-26 | 2018-04-10 | Infineon Technologies Ag | Semiconductor device and method for manufacturing a semiconductor device |
CN103854979B (zh) * | 2012-11-28 | 2017-03-29 | 上海华虹宏力半导体制造有限公司 | 一种超级结外延cmp工艺方法 |
US9799762B2 (en) | 2012-12-03 | 2017-10-24 | Infineon Technologies Ag | Semiconductor device and method of manufacturing a semiconductor device |
CN103035745B (zh) * | 2012-12-31 | 2016-01-20 | 杭州士兰集成电路有限公司 | 采用刻槽工艺形成的恒流二极管及其制造方法 |
US9853140B2 (en) * | 2012-12-31 | 2017-12-26 | Vishay-Siliconix | Adaptive charge balanced MOSFET techniques |
US9245994B2 (en) * | 2013-02-07 | 2016-01-26 | Texas Instruments Incorporated | MOSFET with curved trench feature coupling termination trench to active trench |
US8748976B1 (en) * | 2013-03-06 | 2014-06-10 | Texas Instruments Incorporated | Dual RESURF trench field plate in vertical MOSFET |
US9012984B2 (en) * | 2013-03-13 | 2015-04-21 | Cree, Inc. | Field effect transistor devices with regrown p-layers |
US9142668B2 (en) | 2013-03-13 | 2015-09-22 | Cree, Inc. | Field effect transistor devices with buried well protection regions |
US9306061B2 (en) | 2013-03-13 | 2016-04-05 | Cree, Inc. | Field effect transistor devices with protective regions |
US9240476B2 (en) | 2013-03-13 | 2016-01-19 | Cree, Inc. | Field effect transistor devices with buried well regions and epitaxial layers |
CN103219386B (zh) * | 2013-04-22 | 2016-01-20 | 南京邮电大学 | 一种具有高k绝缘区的横向功率器件 |
JP2014216573A (ja) * | 2013-04-26 | 2014-11-17 | 株式会社東芝 | 半導体装置 |
US9000515B2 (en) * | 2013-05-22 | 2015-04-07 | Force Mos Technology Co., Ltd. | Super-junction trench MOSFETs with short terminations |
US9620637B2 (en) * | 2013-05-24 | 2017-04-11 | Infineon Technologies Ag | Semiconductor device comprising a gate electrode connected to a source terminal |
US9269713B2 (en) * | 2013-06-04 | 2016-02-23 | Infineon Technologies Austria Ag | Semiconductor device and method for producing the same |
US20150035002A1 (en) * | 2013-07-31 | 2015-02-05 | Infineon Technologies Austria Ag | Super Junction Semiconductor Device and Manufacturing Method |
US9224768B2 (en) * | 2013-08-05 | 2015-12-29 | Raytheon Company | Pin diode structure having surface charge suppression |
US9111766B2 (en) * | 2013-09-24 | 2015-08-18 | Infineon Technologies Austria Ag | Transistor device with a field electrode |
US9306058B2 (en) | 2013-10-02 | 2016-04-05 | Infineon Technologies Ag | Integrated circuit and method of manufacturing an integrated circuit |
US9287404B2 (en) | 2013-10-02 | 2016-03-15 | Infineon Technologies Austria Ag | Semiconductor device and method of manufacturing a semiconductor device with lateral FET cells and field plates |
US9401399B2 (en) * | 2013-10-15 | 2016-07-26 | Infineon Technologies Ag | Semiconductor device |
US20150118810A1 (en) * | 2013-10-24 | 2015-04-30 | Madhur Bobde | Buried field ring field effect transistor (buf-fet) integrated with cells implanted with hole supply path |
CN203659877U (zh) * | 2013-10-30 | 2014-06-18 | 英飞凌科技奥地利有限公司 | 超结器件和包括所述超结器件的半导体结构 |
KR20150051067A (ko) * | 2013-11-01 | 2015-05-11 | 삼성전기주식회사 | 전력 반도체 소자 및 그의 제조 방법 |
US10395970B2 (en) * | 2013-12-05 | 2019-08-27 | Vishay-Siliconix | Dual trench structure |
US9543389B2 (en) * | 2013-12-11 | 2017-01-10 | Infineon Technologies Ag | Semiconductor device with recombination region |
US9543396B2 (en) * | 2013-12-13 | 2017-01-10 | Power Integrations, Inc. | Vertical transistor device structure with cylindrically-shaped regions |
JP5989689B2 (ja) * | 2014-01-27 | 2016-09-07 | トヨタ自動車株式会社 | 半導体装置 |
US9761702B2 (en) | 2014-02-04 | 2017-09-12 | MaxPower Semiconductor | Power MOSFET having planar channel, vertical current path, and top drain electrode |
JP6226786B2 (ja) * | 2014-03-19 | 2017-11-08 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
CN106463508A (zh) | 2014-04-01 | 2017-02-22 | 英派尔科技开发有限公司 | 具有闪络保护的垂直晶体管 |
KR102242580B1 (ko) * | 2014-04-23 | 2021-04-22 | 삼성전자주식회사 | 이미지 센서 및 이의 제조 방법 |
US9385187B2 (en) | 2014-04-25 | 2016-07-05 | Texas Instruments Incorporated | High breakdown N-type buried layer |
DE102014107325B4 (de) * | 2014-05-23 | 2023-08-10 | Infineon Technologies Ag | Halbleiterbauelement und verfahren zum herstellen eines halbleiterbauelements |
US9245754B2 (en) | 2014-05-28 | 2016-01-26 | Mark E. Granahan | Simplified charge balance in a semiconductor device |
US9508596B2 (en) | 2014-06-20 | 2016-11-29 | Vishay-Siliconix | Processes used in fabricating a metal-insulator-semiconductor field effect transistor |
US9887259B2 (en) | 2014-06-23 | 2018-02-06 | Vishay-Siliconix | Modulated super junction power MOSFET devices |
EP3183754A4 (en) | 2014-08-19 | 2018-05-02 | Vishay-Siliconix | Super-junction metal oxide semiconductor field effect transistor |
US10234486B2 (en) | 2014-08-19 | 2019-03-19 | Vishay/Siliconix | Vertical sense devices in vertical trench MOSFET |
CN104201194B (zh) * | 2014-08-26 | 2016-10-05 | 电子科技大学 | 一种具有超低比导通电阻特性的高压功率器件 |
JP2016058679A (ja) * | 2014-09-12 | 2016-04-21 | 株式会社東芝 | 半導体装置およびその製造方法 |
JP6763779B2 (ja) * | 2014-11-18 | 2020-09-30 | ローム株式会社 | 半導体装置および半導体装置の製造方法 |
US9406750B2 (en) | 2014-11-19 | 2016-08-02 | Empire Technology Development Llc | Output capacitance reduction in power transistors |
US9443973B2 (en) | 2014-11-26 | 2016-09-13 | Infineon Technologies Austria Ag | Semiconductor device with charge compensation region underneath gate trench |
CN105826195B (zh) * | 2015-01-07 | 2018-12-04 | 北大方正集团有限公司 | 一种超结功率器件及其制作方法 |
DE102015100390B4 (de) * | 2015-01-13 | 2021-02-11 | Infineon Technologies Austria Ag | Halbleitervorrichtung mit feldplattenstrukturen und gateelektrodenstrukturen zwischen den feldplattenstrukturen sowie herstellungsverfahren |
JP2016134546A (ja) * | 2015-01-21 | 2016-07-25 | トヨタ自動車株式会社 | 半導体装置と、その製造方法 |
JP6126150B2 (ja) * | 2015-03-06 | 2017-05-10 | トヨタ自動車株式会社 | 半導体装置 |
US10854761B1 (en) * | 2015-03-30 | 2020-12-01 | Southern Methodist University | Electronic switch and active artificial dielectric |
US9299830B1 (en) | 2015-05-07 | 2016-03-29 | Texas Instruments Incorporated | Multiple shielding trench gate fet |
DE102015109545B4 (de) * | 2015-06-15 | 2021-10-21 | Infineon Technologies Ag | Transistor mit Feldelektroden und verbessertem Lawinendurchbruchsverhalten |
US9673314B2 (en) | 2015-07-08 | 2017-06-06 | Vishay-Siliconix | Semiconductor device with non-uniform trench oxide layer |
DE102015111210A1 (de) * | 2015-07-10 | 2017-01-12 | Infineon Technologies Dresden Gmbh | Verfahren zum füllen eines grabens und halbleiterbauelement |
US9786753B2 (en) * | 2015-07-13 | 2017-10-10 | Diodes Incorporated | Self-aligned dual trench device |
WO2017019074A1 (en) * | 2015-07-30 | 2017-02-02 | Diodes Incorporated | Multi-trench semiconductor devices |
US10020362B2 (en) * | 2015-09-04 | 2018-07-10 | Kabushiki Kaisha Toshiba | Semiconductor device and method of manufacturing the same |
CN105070760B (zh) * | 2015-09-06 | 2017-12-19 | 电子科技大学 | 一种功率mos器件 |
US20170077292A1 (en) * | 2015-09-10 | 2017-03-16 | Kabushiki Kaisha Toyota Jidoshokki | Trench-gate semiconductor device and manufacturing method thereof |
JP2017054958A (ja) * | 2015-09-10 | 2017-03-16 | 株式会社東芝 | 半導体装置 |
JP6551156B2 (ja) * | 2015-10-29 | 2019-07-31 | 富士電機株式会社 | スーパージャンクション型mosfetデバイスおよび半導体チップ |
DE102015122804B4 (de) * | 2015-12-23 | 2020-10-15 | Infineon Technologies Ag | Halbleitervorrichtung, enthaltend eine Wärmesenkenstruktur |
JP6701789B2 (ja) | 2016-02-19 | 2020-05-27 | 富士電機株式会社 | Rb‐igbt |
JP6523997B2 (ja) * | 2016-03-14 | 2019-06-05 | 株式会社東芝 | 半導体装置の製造方法 |
DE102016109555A1 (de) * | 2016-05-24 | 2017-11-30 | Infineon Technologies Austria Ag | Leistungshalbleiterbauelement und verfahren zur herstellung eines leistungshalbleiterbauelements |
DE102016112721B4 (de) * | 2016-07-12 | 2022-02-03 | Infineon Technologies Ag | n-Kanal-Leistungshalbleitervorrichtung mit p-Schicht im Driftvolumen |
JP6583169B2 (ja) * | 2016-07-19 | 2019-10-02 | 株式会社豊田自動織機 | トレンチゲート型半導体装置 |
CN106098781B (zh) * | 2016-08-17 | 2018-10-26 | 电子科技大学 | 一种沟槽结构的vdmos |
WO2018034818A1 (en) * | 2016-08-18 | 2018-02-22 | Maxpower Semiconductor Inc. | Power mosfet having planar channel, vertical current path, and top drain electrode |
US9985092B2 (en) * | 2016-09-13 | 2018-05-29 | Nexperia B.V. | PowerMOS |
JP6626021B2 (ja) * | 2017-02-15 | 2019-12-25 | トヨタ自動車株式会社 | 窒化物半導体装置 |
US10355072B2 (en) | 2017-02-24 | 2019-07-16 | Globalfoundries Singapore Pte. Ltd. | Power trench capacitor compatible with deep trench isolation process |
EP3545556A4 (en) | 2017-03-30 | 2020-10-14 | INTEL Corporation | VERTICALLY STACKED TRANSISTORS IN A FIN |
JP6869791B2 (ja) * | 2017-04-21 | 2021-05-12 | 三菱電機株式会社 | 半導体スイッチング素子及びその製造方法 |
US10177044B2 (en) * | 2017-05-05 | 2019-01-08 | Newport Fab, Llc | Bulk CMOS RF switch with reduced parasitic capacitance |
CN109216256B (zh) * | 2017-07-03 | 2021-01-05 | 无锡华润上华科技有限公司 | 沟槽隔离结构及其制造方法 |
KR102192651B1 (ko) * | 2017-08-23 | 2020-12-17 | 노을 주식회사 | 시약을 저장하는 저장 매체 및 이를 이용한 검사 방법 및 검사 모듈 |
KR102417367B1 (ko) * | 2017-12-14 | 2022-07-05 | 현대자동차 주식회사 | 반도체 소자 |
CN108550621A (zh) * | 2018-04-28 | 2018-09-18 | 重庆大学 | 一种具有变k介质槽的超结碳化硅vdmos器件 |
JP6626929B1 (ja) * | 2018-06-29 | 2019-12-25 | 京セラ株式会社 | 半導体デバイス及び電気装置 |
JP7210182B2 (ja) * | 2018-07-26 | 2023-01-23 | 株式会社東芝 | 半導体装置、インバータ回路、駆動装置、車両、及び、昇降機 |
JP2019050434A (ja) * | 2019-01-04 | 2019-03-28 | 株式会社東芝 | 半導体装置 |
JP7376516B2 (ja) * | 2019-02-07 | 2023-11-08 | ローム株式会社 | 半導体装置 |
US11217541B2 (en) | 2019-05-08 | 2022-01-04 | Vishay-Siliconix, LLC | Transistors with electrically active chip seal ring and methods of manufacture |
US11171206B2 (en) * | 2019-07-11 | 2021-11-09 | Micron Technology, Inc. | Channel conduction in semiconductor devices |
US12032014B2 (en) * | 2019-09-09 | 2024-07-09 | Analog Devices International Unlimited Company | Semiconductor device configured for gate dielectric monitoring |
US11218144B2 (en) | 2019-09-12 | 2022-01-04 | Vishay-Siliconix, LLC | Semiconductor device with multiple independent gates |
TWI739252B (zh) * | 2019-12-25 | 2021-09-11 | 杰力科技股份有限公司 | 溝槽式mosfet元件及其製造方法 |
JP7249269B2 (ja) * | 2019-12-27 | 2023-03-30 | 株式会社東芝 | 半導体装置およびその製造方法 |
US11316042B2 (en) | 2020-01-31 | 2022-04-26 | Power Integrations, Inc. | Process and structure for a superjunction device |
US11610982B2 (en) * | 2020-09-15 | 2023-03-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Void elimination for gap-filling in high-aspect ratio trenches |
US20220085192A1 (en) * | 2020-09-16 | 2022-03-17 | Kabushiki Kaisha Toshiba | Semiconductor device |
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CN117374125A (zh) * | 2023-12-06 | 2024-01-09 | 无锡锡产微芯半导体有限公司 | 一种沟槽mosfet器件及其制备工艺 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02156552A (ja) * | 1988-12-08 | 1990-06-15 | Nec Corp | 半導体装置およびその製造方法 |
JP2003523087A (ja) * | 2000-02-12 | 2003-07-29 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 増加する逆阻止電圧のための分圧器を伴う半導体装置 |
WO2003065459A1 (fr) * | 2002-01-28 | 2003-08-07 | Mitsubishi Denki Kabushiki Kaisha | Dispositif a semi-conducteur |
JP2003282892A (ja) * | 2002-03-08 | 2003-10-03 | Internatl Business Mach Corp <Ibm> | 低容量esd耐性ダイオードの方法および構造 |
JP2004047599A (ja) * | 2002-07-10 | 2004-02-12 | Renesas Technology Corp | 半導体装置およびその製造方法 |
JP2004146689A (ja) * | 2002-10-25 | 2004-05-20 | Fuji Electric Device Technology Co Ltd | 超接合半導体素子 |
JP2005064429A (ja) * | 2003-08-20 | 2005-03-10 | Fuji Electric Device Technology Co Ltd | 半導体装置およびその製造方法 |
Family Cites Families (66)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US203576A (en) * | 1878-05-14 | Improvement in book-clamps | ||
US41407A (en) * | 1864-01-26 | Improvement in plows | ||
US6021A (en) * | 1849-01-09 | Cast-iron cab-wheel | ||
US60916A (en) * | 1867-01-01 | Theophiltjs f | ||
GB2028582A (en) | 1978-08-17 | 1980-03-05 | Plessey Co Ltd | Field effect structure |
US4978631A (en) | 1986-07-25 | 1990-12-18 | Siliconix Incorporated | Current source with a process selectable temperature coefficient |
US5243212A (en) * | 1987-12-22 | 1993-09-07 | Siliconix Incorporated | Transistor with a charge induced drain extension |
JPH01185936A (ja) | 1988-01-21 | 1989-07-25 | Fujitsu Ltd | 半導体装置 |
US5282018A (en) * | 1991-01-09 | 1994-01-25 | Kabushiki Kaisha Toshiba | Power semiconductor device having gate structure in trench |
CN1019720B (zh) | 1991-03-19 | 1992-12-30 | 电子科技大学 | 半导体功率器件 |
DE4333661C1 (de) * | 1993-10-01 | 1995-02-16 | Daimler Benz Ag | Halbleiterbauelement mit hoher Durchbruchsspannung |
JP3307785B2 (ja) | 1994-12-13 | 2002-07-24 | 三菱電機株式会社 | 絶縁ゲート型半導体装置 |
US6078090A (en) | 1997-04-02 | 2000-06-20 | Siliconix Incorporated | Trench-gated Schottky diode with integral clamping diode |
US5637898A (en) * | 1995-12-22 | 1997-06-10 | North Carolina State University | Vertical field effect transistors having improved breakdown voltage capability and low on-state resistance |
DE59707158D1 (de) * | 1996-02-05 | 2002-06-06 | Infineon Technologies Ag | Durch feldeffekt steuerbares halbleiterbauelement |
JPH09283754A (ja) * | 1996-04-16 | 1997-10-31 | Toshiba Corp | 高耐圧半導体装置 |
JPH10256550A (ja) * | 1997-01-09 | 1998-09-25 | Toshiba Corp | 半導体装置 |
JP3938964B2 (ja) * | 1997-02-10 | 2007-06-27 | 三菱電機株式会社 | 高耐圧半導体装置およびその製造方法 |
JP3191747B2 (ja) | 1997-11-13 | 2001-07-23 | 富士電機株式会社 | Mos型半導体素子 |
EP0968529B1 (en) * | 1997-12-10 | 2008-01-23 | Nxp B.V. | Semiconductor device and method of manufacturing such a device |
US6069372A (en) | 1998-01-22 | 2000-05-30 | Mitsubishi Denki Kabushiki Kaisha | Insulated gate type semiconductor device with potential detection gate for overvoltage protection |
KR100295063B1 (ko) | 1998-06-30 | 2001-08-07 | 김덕중 | 트렌치게이트구조의전력반도체장치및그제조방법 |
GB9815021D0 (en) * | 1998-07-11 | 1998-09-09 | Koninkl Philips Electronics Nv | Semiconductor power device manufacture |
US5998833A (en) | 1998-10-26 | 1999-12-07 | North Carolina State University | Power semiconductor devices having improved high frequency switching and breakdown characteristics |
US6351018B1 (en) * | 1999-02-26 | 2002-02-26 | Fairchild Semiconductor Corporation | Monolithically integrated trench MOSFET and Schottky diode |
US6191447B1 (en) | 1999-05-28 | 2001-02-20 | Micro-Ohm Corporation | Power semiconductor devices that utilize tapered trench-based insulating regions to improve electric field profiles in highly doped drift region mesas and methods of forming same |
JP3971062B2 (ja) * | 1999-07-29 | 2007-09-05 | 株式会社東芝 | 高耐圧半導体装置 |
JP4765012B2 (ja) | 2000-02-09 | 2011-09-07 | 富士電機株式会社 | 半導体装置及びその製造方法 |
JP4363736B2 (ja) * | 2000-03-01 | 2009-11-11 | 新電元工業株式会社 | トランジスタ及びその製造方法 |
GB0006957D0 (en) * | 2000-03-23 | 2000-05-10 | Koninkl Philips Electronics Nv | A semiconductor device |
US6541820B1 (en) | 2000-03-28 | 2003-04-01 | International Rectifier Corporation | Low voltage planar power MOSFET with serpentine gate pattern |
JP2003533889A (ja) | 2000-05-13 | 2003-11-11 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | トレンチゲート半導体装置 |
US6391699B1 (en) * | 2000-06-05 | 2002-05-21 | Fairchild Semiconductor Corporation | Method of manufacturing a trench MOSFET using selective growth epitaxy |
US6445035B1 (en) * | 2000-07-24 | 2002-09-03 | Fairchild Semiconductor Corporation | Power MOS device with buried gate and groove |
US6696726B1 (en) * | 2000-08-16 | 2004-02-24 | Fairchild Semiconductor Corporation | Vertical MOSFET with ultra-low resistance and low gate charge |
JP4764987B2 (ja) * | 2000-09-05 | 2011-09-07 | 富士電機株式会社 | 超接合半導体素子 |
US6509233B2 (en) | 2000-10-13 | 2003-01-21 | Siliconix Incorporated | Method of making trench-gated MOSFET having cesium gate oxide layer |
US6525372B2 (en) | 2000-11-16 | 2003-02-25 | Silicon Wireless Corporation | Vertical power devices having insulated source electrodes in discontinuous deep trenches |
US6608350B2 (en) * | 2000-12-07 | 2003-08-19 | International Rectifier Corporation | High voltage vertical conduction superjunction semiconductor device |
US7345342B2 (en) * | 2001-01-30 | 2008-03-18 | Fairchild Semiconductor Corporation | Power semiconductor devices and methods of manufacture |
US6710403B2 (en) | 2002-07-30 | 2004-03-23 | Fairchild Semiconductor Corporation | Dual trench power MOSFET |
US6677641B2 (en) * | 2001-10-17 | 2004-01-13 | Fairchild Semiconductor Corporation | Semiconductor structure with improved smaller forward voltage loss and higher blocking capability |
WO2002084745A2 (en) * | 2001-04-11 | 2002-10-24 | Silicon Wireless Corporation | Power semiconductor devices and methods of forming same |
US20020179968A1 (en) | 2001-05-30 | 2002-12-05 | Frank Pfirsch | Power semiconductor component, compensation component, power transistor, and method for producing power semiconductor components |
US6555873B2 (en) * | 2001-09-07 | 2003-04-29 | Power Integrations, Inc. | High-voltage lateral transistor with a multi-layered extended drain structure |
DE10144268B4 (de) | 2001-09-08 | 2015-03-05 | Robert Bosch Gmbh | Vorrichtung zur Messung der Stärke einer Vektorkomponente eines Magnetfeldes |
CN1181559C (zh) | 2001-11-21 | 2004-12-22 | 同济大学 | 一种半导体器件 |
US6686244B2 (en) | 2002-03-21 | 2004-02-03 | General Semiconductor, Inc. | Power semiconductor device having a voltage sustaining region that includes doped columns formed with a single ion implantation step |
US6812525B2 (en) | 2002-06-25 | 2004-11-02 | International Rectifier Corporation | Trench fill process |
DE10313712B4 (de) * | 2003-03-27 | 2008-04-03 | Infineon Technologies Ag | Laterales mittels Feldeffekt steuerbares Halbleiterbauelement für HF-Anwendungen |
US7652326B2 (en) | 2003-05-20 | 2010-01-26 | Fairchild Semiconductor Corporation | Power semiconductor devices and methods of manufacture |
JP4194890B2 (ja) * | 2003-06-24 | 2008-12-10 | 株式会社豊田中央研究所 | 半導体装置とその製造方法 |
DE10334780B3 (de) * | 2003-07-30 | 2005-04-21 | Infineon Technologies Ag | Halbleiteranordnung mit einer MOSFET-Struktur und einer Zenereinrichtung sowie Verfahren zur Herstellung derselben |
DE10339488B3 (de) * | 2003-08-27 | 2005-04-14 | Infineon Technologies Ag | Laterales Halbleiterbauelement mit einer wenigstens eine Feldelektrode aufweisenden Driftzone |
EP1536463A1 (en) * | 2003-11-28 | 2005-06-01 | STMicroelectronics S.r.l. | Method for manufacturing a power device with insulated trench-gate having controlled channel length and corresponding device |
KR20070038945A (ko) * | 2003-12-19 | 2007-04-11 | 써드 디멘존 세미컨덕터, 인코포레이티드 | 수퍼 접합 장치의 제조 방법 |
US7368777B2 (en) * | 2003-12-30 | 2008-05-06 | Fairchild Semiconductor Corporation | Accumulation device with charge balance structure and method of forming the same |
US7535056B2 (en) * | 2004-03-11 | 2009-05-19 | Yokogawa Electric Corporation | Semiconductor device having a low concentration layer formed outside a drift layer |
US20050199918A1 (en) * | 2004-03-15 | 2005-09-15 | Daniel Calafut | Optimized trench power MOSFET with integrated schottky diode |
US7465986B2 (en) * | 2004-08-27 | 2008-12-16 | International Rectifier Corporation | Power semiconductor device including insulated source electrodes inside trenches |
US7355238B2 (en) * | 2004-12-06 | 2008-04-08 | Asahi Glass Company, Limited | Nonvolatile semiconductor memory device having nanoparticles for charge retention |
CN101882583A (zh) * | 2005-04-06 | 2010-11-10 | 飞兆半导体公司 | 沟栅场效应晶体管及其形成方法 |
DE102006055131A1 (de) * | 2005-11-28 | 2007-06-06 | Fuji Electric Holdings Co., Ltd., Kawasaki | Halbleiterbauteil und Verfahren zu seiner Herstellung |
US7473976B2 (en) * | 2006-02-16 | 2009-01-06 | Fairchild Semiconductor Corporation | Lateral power transistor with self-biasing electrodes |
US7535621B2 (en) * | 2006-12-27 | 2009-05-19 | Qualcomm Mems Technologies, Inc. | Aluminum fluoride films for microelectromechanical system applications |
CN101641763B (zh) * | 2007-01-09 | 2012-07-04 | 威力半导体有限公司 | 半导体器件及其制造方法 |
-
2008
- 2008-01-08 CN CN2008800019246A patent/CN101641763B/zh active Active
- 2008-01-08 US US11/971,169 patent/US8420483B2/en active Active
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Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02156552A (ja) * | 1988-12-08 | 1990-06-15 | Nec Corp | 半導体装置およびその製造方法 |
JP2003523087A (ja) * | 2000-02-12 | 2003-07-29 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 増加する逆阻止電圧のための分圧器を伴う半導体装置 |
WO2003065459A1 (fr) * | 2002-01-28 | 2003-08-07 | Mitsubishi Denki Kabushiki Kaisha | Dispositif a semi-conducteur |
JP2003282892A (ja) * | 2002-03-08 | 2003-10-03 | Internatl Business Mach Corp <Ibm> | 低容量esd耐性ダイオードの方法および構造 |
JP2004047599A (ja) * | 2002-07-10 | 2004-02-12 | Renesas Technology Corp | 半導体装置およびその製造方法 |
JP2004146689A (ja) * | 2002-10-25 | 2004-05-20 | Fuji Electric Device Technology Co Ltd | 超接合半導体素子 |
JP2005064429A (ja) * | 2003-08-20 | 2005-03-10 | Fuji Electric Device Technology Co Ltd | 半導体装置およびその製造方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015195366A (ja) * | 2014-03-17 | 2015-11-05 | 株式会社東芝 | 半導体装置 |
US10141455B2 (en) | 2014-03-17 | 2018-11-27 | Kabushiki Kaisha Toshiba | Semiconductor device |
JP2019016804A (ja) * | 2014-03-17 | 2019-01-31 | 株式会社東芝 | 半導体装置 |
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