JP2009267243A - 不揮発性半導体記憶装置、及びその製造方法 - Google Patents
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Abstract
【解決手段】不揮発性半導体記憶装置100は、メモリセルトランジスタ層30、第2CMP用ダミー層70を備える。メモリセルトランジスタ層30は、半導体基板Baに平行で且つ積層された第1〜第4ワード線導電層と32a〜32d、メモリ保護絶縁層34を備える。第1〜第4ワード線導電層32a〜32dの端部は、ロウ方向にて階段状に形成されている。第2CMP用ダミー層70は、半導体基板Baに平行で且つ積層されて第1〜第4ワード線導電層32a〜32dと同層に形成されたダミー第1〜第4ワード線導電層72a〜72d、ダミーメモリ保護絶縁層74を備える。ダミー第1〜第4ワード線導電層72a〜72dの端部は、配線領域Arにて半導体基板Baに対して略垂直方向に延びる直線に沿って揃うように形成されている。
【選択図】図4
Description
(第1実施形態に係る不揮発性半導体記憶装置100の構成)
図1は、本発明の第1実施形態に係る不揮発性半導体記憶装置100の概略図を示す。図1に示すように、実施形態に係る不揮発性半導体記憶装置100は、主として、メモリトランジスタ領域(第1の領域)12、ワード線駆動回路13、ソース側選択ゲート線(SGS)駆動回路14、ドレイン側選択ゲート線(SGD)駆動回路15、センスアンプ16を有する。メモリトランジスタ領域12は、データを記憶するメモリトランジスタを有する。ワード線駆動回路13は、ワード線WLにかける電圧を制御する。ソース側選択ゲート線(SGS)駆動回路14は、ソース側選択ゲート線SGSにかける電圧を制御する。ドレイン側選択ゲート線(SGD)駆動回路15は、ドレイン側選択ゲート線SGDにかける電圧を制御する。センスアンプ16は、メモリトランジスタから読み出した電位を増幅する。なお、上記の他、実施形態に係る不揮発性半導体記憶装置100は、ビット線BLにかける電圧を制御するビット線駆動回路、ソース線SLにかける電圧を制御するソース線駆動回路を有する(図示略)。
次に、図4を参照して、第1実施形態に係る不揮発性半導体記憶装置100の更に具体的構成を説明する。図4は、第1実施形態に係る不揮発性半導体記憶装置のロウ方向の断面図である。図4に示すように、不揮発性半導体記憶装置100は、上述したメモリトランジスタ領域12、及びそのメモリトランジスタ領域12の周辺に設けられた周辺領域(第2の領域)Phを有する。
次に、図6〜図17を参照して、第1実施形態に係る不揮発性半導体記憶装置100の製造工程について説明する。
次に、第1実施形態に係る不揮発性半導体記憶装置100の効果について説明する。上記のように第1実施形態に係る不揮発性半導体記憶装置100において、メモリトランジスタ層30の第1〜第4ワード線導電層32a〜32dのロウ方向の端部は、階段状に形成されている。一方、第2CMP用ダミー層70のダミー第1〜第4ワード線導電層72a〜72dの端部は、配線領域Ar1にて半導体基板Baに対して略垂直方向に延びる直線に沿って揃うように形成されている。
(第2実施形態に係る不揮発性半導体記憶装置100aの具体的構成)
次に、図18を参照して、第2実施形態に係る不揮発性半導体記憶装置100aの具体的構成を説明する。図18は、第2実施形態に係る不揮発性半導体記憶装置100aのロウ方向の断面図である。なお、第2実施形態において、第1実施形態と同様の構成については、同一符号を付し、その説明を省略する。
次に、図19〜図24を参照して、第2実施形態に係る不揮発性半導体記憶装置100aの製造工程について説明する。
次に、第2実施形態に係る不揮発性半導体記憶装置100aの効果について説明する。第2実施形態に係る不揮発性半導体記憶装置100aは、第1実施形態と略同様の構成を有する。したがって、第2実施形態に係る不揮発性半導体記憶装置100aは、第1実施形態と同様の効果を奏する。
(第3実施形態に係る不揮発性半導体記憶装置100bの具体的構成)
次に、図25を参照して、第3実施形態に係る不揮発性半導体記憶装置100bの具体的構成について説明する。図25は、第3実施形態に係る不揮発性半導体記憶装置100bのロウ方向の断面図である。なお、第3実施形態において、第1及び第2実施形態と同様の構成については、同一符号を付し、その説明を省略する。
次に、図26〜図30を参照して、第3実施形態に係る不揮発性半導体記憶装置100bの製造工程について説明する。
次に、第3実施形態に係る不揮発性半導体記憶装置100bの効果について説明する。第3実施形態に係る不揮発性半導体記憶装置100bは、第1及び第2実施形態と略同様の構成を有する。したがって、第3実施形態に係る不揮発性半導体記憶装置100bは、第1及び第2実施形態と同様の効果を奏する。
(第4実施形態に係る不揮発性半導体記憶装置100cの具体的構成)
次に、図31を参照して、第4実施形態に係る不揮発性半導体記憶装置100cの具体的構成について説明する。図31は、第4実施形態に係る不揮発性半導体記憶装置100cのロウ方向の断面図である。なお、第4実施形態において、第1〜第3実施形態と同様の構成については、同一符号を付し、その説明を省略する。
次に、図32及び図33を参照して、第4実施形態に係る不揮発性半導体記憶装置100cの製造工程について説明する。
次に、第4実施形態に係る不揮発性半導体記憶装置100cの効果について説明する。第4実施形態に係る不揮発性半導体記憶装置100cは、第1〜第3実施形態と略同様の構成を有する。したがって、第4実施形態に係る不揮発性半導体記憶装置100cは、第1〜第3実施形態と同様の効果を奏する。
以上、不揮発性半導体記憶装置の実施形態を説明してきたが、本発明は、上記実施形態に限定されるものではなく、発明の趣旨を逸脱しない範囲内において種々の変更、追加、置換等が可能である。
Claims (5)
- 電気的に書き換え可能であり且つ直列接続された複数のメモリセルとして機能する第1の層、及び当該第1の層の周辺に設けられた第2の層を備え、
前記第1の層は、
基板に対して平行に延びると共に前記基板に垂直な方向に積層された複数の第1導電層と、
前記複数の第1導電層の上層に形成された第1絶縁層と、
当該複数の第1導電層を貫通するように形成された第1半導体層と、
前記第1導電層と前記第1半導体層との間に形成され且つ電荷を蓄積可能に構成された電荷蓄積層とを備え、
前記第1導電層の端部は、第1方向にて階段状に形成され、
前記第2の層は、
前記基板に対して平行に延びると共に前記基板に垂直な方向に積層されて前記複数の第1導電層とそれぞれ同層に形成された複数の第2導電層と、
前記複数の第2導電層の上層に形成された第2絶縁層とを備え、
前記第2導電層の端部は、所定領域にて前記基板に対して略垂直方向に延びる直線に沿って揃うように形成されている
ことを特徴とする不揮発性半導体記憶装置。 - 前記第1絶縁層は、前記複数の第1導電層を覆うように連続して形成され、
前記第2絶縁層は、前記複数の第2導電層を覆うように連続して形成されている
ことを特徴とする請求項1記載の不揮発性半導体記憶装置。 - 前記所定領域は、前記第2の層の上層から下層へと延びる接続導電層及び前記第2絶縁層により満たされるように構成されている
ことを特徴とする請求項1又は請求項2記載の不揮発性半導体記憶装置。 - 電気的に書き換え可能であり且つ直列接続された複数のメモリセルを有する不揮発性半導体記憶装置の製造方法であって、
基板に平行に延びる導電層を複数層に亘って前記基板上に積層させるように形成する工程と、
前記複数層の導電層の上層に絶縁層を形成する工程と、
第1の領域の第1方向の端部にて前記複数の導電層を階段状に加工する工程と、
前記第1の領域と異なる第2の領域の所定領域にて前記複数の導電層を貫通する第1の貫通孔を形成する工程と、
当該第1の貫通孔内に絶縁層を形成する工程と、
前記第1の貫通孔内の絶縁層を貫通する第2の貫通孔を形成する工程と、
前記第2の貫通孔を埋めるように導電層を形成する工程と
を備えることを特徴とする不揮発性半導体記憶装置の製造方法。 - 前記複数層の導電層を覆うように連続して前記絶縁層を形成する
ことを特徴とする請求項4記載の不揮発性半導体記憶装置の製造方法。
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JP2011181823A (ja) * | 2010-03-03 | 2011-09-15 | Toshiba Corp | 不揮発性半導体記憶装置 |
JP2011187794A (ja) * | 2010-03-10 | 2011-09-22 | Toshiba Corp | 半導体記憶装置及びその製造方法 |
JP2011187533A (ja) * | 2010-03-05 | 2011-09-22 | Toshiba Corp | 半導体記憶装置及びその製造方法 |
JP2012009701A (ja) * | 2010-06-25 | 2012-01-12 | Toshiba Corp | 不揮発性半導体記憶装置 |
JP2012059966A (ja) * | 2010-09-09 | 2012-03-22 | Toshiba Corp | 半導体記憶装置及びその製造方法 |
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US8569829B2 (en) | 2009-12-28 | 2013-10-29 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device |
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