JP2009260155A - Dmosトランジスタ - Google Patents
Dmosトランジスタ Download PDFInfo
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- JP2009260155A JP2009260155A JP2008109713A JP2008109713A JP2009260155A JP 2009260155 A JP2009260155 A JP 2009260155A JP 2008109713 A JP2008109713 A JP 2008109713A JP 2008109713 A JP2008109713 A JP 2008109713A JP 2009260155 A JP2009260155 A JP 2009260155A
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- 229910021332 silicide Inorganic materials 0.000 claims abstract description 40
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 40
- 230000005684 electric field Effects 0.000 claims description 22
- 239000004065 semiconductor Substances 0.000 claims description 11
- 230000000903 blocking effect Effects 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 230000006866 deterioration Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 125
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 18
- 229910052710 silicon Inorganic materials 0.000 description 18
- 239000010703 silicon Substances 0.000 description 18
- 230000015556 catabolic process Effects 0.000 description 7
- 239000011229 interlayer Substances 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910052723 transition metal Inorganic materials 0.000 description 4
- 150000003624 transition metals Chemical class 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910018594 Si-Cu Inorganic materials 0.000 description 2
- 229910008465 Si—Cu Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000002040 relaxant effect Effects 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41758—Source or drain electrodes for field effect devices for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41775—Source or drain electrodes for field effect devices characterised by the proximity or the relative position of the source or drain electrode and the gate electrode, e.g. the source or drain electrode separated from the gate electrode by side-walls or spreading around or above the gate electrode
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0873—Drain regions
- H01L29/0878—Impurity concentration or distribution
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
- H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement
- H01L29/4933—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement with a silicide layer contacting the silicon layer, e.g. Polycide gate
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66681—Lateral DMOS transistors, i.e. LDMOS transistors
- H01L29/66689—Lateral DMOS transistors, i.e. LDMOS transistors with a step of forming an insulating sidewall spacer
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
【解決手段】DMOSトランジスタのソース層5の端部は、ゲート電極7の内側のコーナー部7Aから後退して配置されている。また、ソース層5上のシリサイド層11をソース層5の端部から外に延在させないようにした。即ち、ソース層5の表面にはシリサイド層11を形成するが、ソース層5とゲート電極7の内側のコーナー部7Aの間に露出したボディ層4の表面については、シリサイド層11を形成していない。これにより、電流集中が無くなり、電流はDMOSトランジスタの全体にほぼ均一に流れるようになるため、静電破壊強度を向上させることができる。
【選択図】図1
Description
4 ボディ層 5 ソース層 6 ボディ電位設定層
7 ゲート電極 8 ゲート絶縁膜 9 電界緩和絶縁膜
10 ドレイン層 11 シリサイド層 12 シリサイド阻止膜
13 電界緩和層 14 空乏層 15 層間絶縁膜
16,20 コンタクトホール 17,21 金属ポスト
18,22 バリア層 19 ソース配線層
23 ドレイン配線層
Claims (5)
- 半導体層と、
前記半導体層の表面に形成された第1導電型のボディ層と、
前記ボディ層の表面に形成された第2導電型のソース層と、
前記ソース層の表面に形成されたシリサイド層と、
前記ボディ層及び前記ソース層を取り囲んでリング状に形成されたゲート電極と、を備え、
前記ソース層と前記ゲート電極との間に露出した前記ボディ層の表面に前記シリサイド層が形成されていないことを特徴とするDMOSトランジスタ。 - 半導体層と、
前記半導体層の表面に形成された第1導電型のボディ層と、
前記ボディ層の表面に形成された第2導電型のソース層と、
前記ソース層の表面に形成されたシリサイド層と、
前記ボディ層及び前記ソース層を取り囲んでリング状に形成されたゲート電極と、を備え、
前記ソース層の端部は前記ゲート電極の内側のコーナー部から後退して配置され、前記ソース層と前記ゲート電極の内側のコーナー部の間に露出した前記ボディ層の表面に前記シリサイド層が形成されていないことを特徴とするDMOSトランジスタ。 - 前記ソース層と前記ゲート電極の内側のコーナー部の間に露出した前記ボディ層の表面は、前記シリサイド層の形成を阻止するシリサイド阻止膜によって被覆されていることを特徴とする請求項1又は2に記載のDMOSトランジスタ。
- 前記ゲート電極の内側のコーナー部から後退した前記ソース層の端部に隣接して前記半導体層の中に第2導電型の電界緩和半導体層が設けられたことを特徴とする請求項1、2、3のいずれかに記載のDMOSトランジスタ。
- 前記ゲート電極はゲート絶縁膜上から電界緩和絶縁膜上に延在し、前記電界緩和半導体層は、前記電界緩和絶縁膜の下方に配置されていることを特徴とする請求項4に記載のDMOSトランジスタ。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008109713A JP5329118B2 (ja) | 2008-04-21 | 2008-04-21 | Dmosトランジスタ |
US12/425,592 US7768067B2 (en) | 2008-04-21 | 2009-04-17 | DMOS transistor |
CN2009101321475A CN101567387B (zh) | 2008-04-21 | 2009-04-21 | 双扩散金属氧化物半导体晶体管 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008109713A JP5329118B2 (ja) | 2008-04-21 | 2008-04-21 | Dmosトランジスタ |
Publications (2)
Publication Number | Publication Date |
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JP2009260155A true JP2009260155A (ja) | 2009-11-05 |
JP5329118B2 JP5329118B2 (ja) | 2013-10-30 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2008109713A Active JP5329118B2 (ja) | 2008-04-21 | 2008-04-21 | Dmosトランジスタ |
Country Status (3)
Country | Link |
---|---|
US (1) | US7768067B2 (ja) |
JP (1) | JP5329118B2 (ja) |
CN (1) | CN101567387B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010278312A (ja) * | 2009-05-29 | 2010-12-09 | Sanyo Electric Co Ltd | 半導体装置 |
JP2012156205A (ja) * | 2011-01-24 | 2012-08-16 | Asahi Kasei Electronics Co Ltd | 半導体装置、半導体装置の製造方法 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100947941B1 (ko) * | 2007-12-27 | 2010-03-15 | 주식회사 동부하이텍 | 반도체 소자 및 그 제조방법 |
US9337284B2 (en) | 2014-04-07 | 2016-05-10 | Alpha And Omega Semiconductor Incorporated | Closed cell lateral MOSFET using silicide source and body regions |
US11581215B2 (en) * | 2020-07-14 | 2023-02-14 | Newport Fab, Llc | Body-source-tied semiconductor-on-insulator (SOI) transistor |
Citations (7)
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JPH05267652A (ja) * | 1991-10-15 | 1993-10-15 | Texas Instr Inc <Ti> | 電界効果トランジスタ |
JPH10233508A (ja) * | 1996-11-11 | 1998-09-02 | Sgs Thomson Microelettronica Spa | “スナップ・バック”から保護されたdmosトランジスタ |
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JP2007080919A (ja) * | 2005-09-12 | 2007-03-29 | Sanyo Electric Co Ltd | 半導体装置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2004039773A (ja) | 2002-07-02 | 2004-02-05 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
JP2004079800A (ja) | 2002-08-19 | 2004-03-11 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
US20050242371A1 (en) | 2004-04-30 | 2005-11-03 | Khemka Vishnu K | High current MOS device with avalanche protection and method of operation |
US7187033B2 (en) * | 2004-07-14 | 2007-03-06 | Texas Instruments Incorporated | Drain-extended MOS transistors with diode clamp and methods for making the same |
JP4904776B2 (ja) | 2005-11-01 | 2012-03-28 | 株式会社デンソー | 半導体装置およびその製造方法 |
JP4943763B2 (ja) | 2006-07-31 | 2012-05-30 | オンセミコンダクター・トレーディング・リミテッド | 半導体装置及びその製造方法 |
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2008
- 2008-04-21 JP JP2008109713A patent/JP5329118B2/ja active Active
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2009
- 2009-04-17 US US12/425,592 patent/US7768067B2/en active Active
- 2009-04-21 CN CN2009101321475A patent/CN101567387B/zh not_active Expired - Fee Related
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05267652A (ja) * | 1991-10-15 | 1993-10-15 | Texas Instr Inc <Ti> | 電界効果トランジスタ |
JPH10233508A (ja) * | 1996-11-11 | 1998-09-02 | Sgs Thomson Microelettronica Spa | “スナップ・バック”から保護されたdmosトランジスタ |
JP2003218348A (ja) * | 2002-01-18 | 2003-07-31 | Rohm Co Ltd | 二重拡散型mosfetおよびこれを用いた半導体装置 |
JP2006510206A (ja) * | 2002-12-10 | 2006-03-23 | フェアチャイルド・セミコンダクター・コーポレーション | 集積回路構造体 |
JP2007027641A (ja) * | 2005-07-21 | 2007-02-01 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2007067181A (ja) * | 2005-08-31 | 2007-03-15 | Sharp Corp | 横型二重拡散型電界効果トランジスタおよびそれを備えた集積回路 |
JP2007080919A (ja) * | 2005-09-12 | 2007-03-29 | Sanyo Electric Co Ltd | 半導体装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010278312A (ja) * | 2009-05-29 | 2010-12-09 | Sanyo Electric Co Ltd | 半導体装置 |
JP2012156205A (ja) * | 2011-01-24 | 2012-08-16 | Asahi Kasei Electronics Co Ltd | 半導体装置、半導体装置の製造方法 |
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JP5329118B2 (ja) | 2013-10-30 |
CN101567387A (zh) | 2009-10-28 |
US7768067B2 (en) | 2010-08-03 |
CN101567387B (zh) | 2010-11-10 |
US20090261410A1 (en) | 2009-10-22 |
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