JP2007080919A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2007080919A JP2007080919A JP2005263468A JP2005263468A JP2007080919A JP 2007080919 A JP2007080919 A JP 2007080919A JP 2005263468 A JP2005263468 A JP 2005263468A JP 2005263468 A JP2005263468 A JP 2005263468A JP 2007080919 A JP2007080919 A JP 2007080919A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 42
- 238000009792 diffusion process Methods 0.000 claims abstract description 184
- 229910052751 metal Inorganic materials 0.000 claims abstract description 30
- 239000002184 metal Substances 0.000 claims abstract description 30
- 239000012535 impurity Substances 0.000 claims description 18
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 230000002093 peripheral effect Effects 0.000 claims description 4
- 230000015556 catabolic process Effects 0.000 abstract description 36
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 240
- 239000000758 substrate Substances 0.000 description 12
- 230000004888 barrier function Effects 0.000 description 6
- 230000005684 electric field Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000002955 isolation Methods 0.000 description 5
- 210000000746 body region Anatomy 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 1
- -1 aluminum-silicon-copper Chemical compound 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000005360 phosphosilicate glass Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
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- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
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- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
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- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
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- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
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- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
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- H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement
- H01L29/4933—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement with a silicide layer contacting the silicon layer, e.g. Polycide gate
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- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
【解決手段】 本発明の半導体装置では、楕円形状にMOSトランジスタ1が配置されている。楕円形状の直線領域Lは活性領域として用いられ、楕円形状の曲線領域Rは非活性領域として用いられている。非活性領域では、曲線形状に合わせてP型の拡散層3が形成されている。また、非活性領域の一部には、P型の拡散層4が形成されている。そして、P型の拡散層3、4はフローティング拡散層として形成され、絶縁層上の金属層と容量結合し、所定の電位が印加された状態となる。この構造により、非活性領域での耐圧特性を向上させつつ、活性領域の電流能力を維持することができる。
【選択図】 図1
Description
2 P型の拡散層
3 P型の拡散層
4 P型の拡散層
5 P型の単結晶シリコン基板
7 N型のエピタキシャル層
27 LOCOS酸化膜
28 LOCOS酸化膜
29 コンタクトホール
30 金属層
32 金属層
Claims (6)
- 半導体層と、前記半導体層に形成されているバックゲート領域、ドレイン領域及びソース領域と、前記半導体層上面に形成されているゲート酸化膜と、前記ゲート酸化膜上に形成されているゲート電極と、前記半導体層上面に形成されている絶縁層とを有する半導体装置において、
前記半導体層には、電流経路となる活性領域と電流経路とならない非活性領域とが形成され、前記非活性領域の前記半導体層にはフローティング状態の第1の拡散層が形成され、
前記活性領域及び前記非活性領域にはフローティング状態の第2の拡散層が形成され、
前記非活性領域では、前記第1の拡散層と前記第2の拡散層とがその形成領域を重畳させている領域が、少なくとも、前記絶縁層上面に形成されている金属層と容量結合することを特徴とする半導体装置。 - 前記第2の拡散層は、前記第1の拡散層よりも不純物濃度が低く、且つ、前記第2の拡散層は、前記第1の拡散層よりも外周側へ延在していることを特徴とする請求項1に記載の半導体装置。
- 前記非活性領域は曲線形状であり、前記第1の拡散層及び前記第2の拡散層は前記曲線形状に合わせて配置されていることを特徴とする請求項1、請求項2のいずれかに記載の半導体装置。
- 前記非活性領域の半導体層にはフィールド酸化膜が形成され、前記フィールド酸化膜上に配置されたコンタクトホール近傍にはフローティング状態の第3の拡散層が形成され、
前記非活性領域では、前記第2の拡散層と前記第3の拡散層とがその形成領域を重畳させている領域が、少なくとも、前記絶縁層上面に形成されている金属層と容量結合することを特徴とする請求項1に記載の半導体装置。 - 前記第2の拡散層は、前記第3の拡散層よりも不純物濃度が低く、且つ、前記第2の拡散層は、前記第3の拡散層よりも外周側へ延在していることを特徴とする請求項4に記載の半導体装置。
- 前記第3の拡散層は、前記第1の拡散層よりも拡散深さが深いことを特徴とする請求項4に記載の半導体装置。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005263468A JP4791113B2 (ja) | 2005-09-12 | 2005-09-12 | 半導体装置 |
US11/516,733 US7652307B2 (en) | 2005-09-12 | 2006-09-07 | Semiconductor device with two overlapping diffusion layers held at floating voltage for improving withstand voltage |
TW095133192A TW200713580A (en) | 2005-09-12 | 2006-09-08 | Semiconductor devices |
KR1020060087349A KR100749230B1 (ko) | 2005-09-12 | 2006-09-11 | 반도체 장치 |
DE602006012106T DE602006012106D1 (de) | 2005-09-12 | 2006-09-12 | Halbleiteranordnung |
CNB2006101272193A CN100454580C (zh) | 2005-09-12 | 2006-09-12 | 半导体装置 |
EP06019023A EP1763083B1 (en) | 2005-09-12 | 2006-09-12 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005263468A JP4791113B2 (ja) | 2005-09-12 | 2005-09-12 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
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JP2007080919A true JP2007080919A (ja) | 2007-03-29 |
JP4791113B2 JP4791113B2 (ja) | 2011-10-12 |
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Application Number | Title | Priority Date | Filing Date |
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JP2005263468A Expired - Fee Related JP4791113B2 (ja) | 2005-09-12 | 2005-09-12 | 半導体装置 |
Country Status (7)
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---|---|
US (1) | US7652307B2 (ja) |
EP (1) | EP1763083B1 (ja) |
JP (1) | JP4791113B2 (ja) |
KR (1) | KR100749230B1 (ja) |
CN (1) | CN100454580C (ja) |
DE (1) | DE602006012106D1 (ja) |
TW (1) | TW200713580A (ja) |
Cited By (7)
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WO2009041741A1 (ja) * | 2007-09-28 | 2009-04-02 | Sanyo Electric Co., Ltd. | Dmosトランジスタ及びその製造方法 |
JP2009260155A (ja) * | 2008-04-21 | 2009-11-05 | Sanyo Electric Co Ltd | Dmosトランジスタ |
JP2010278312A (ja) * | 2009-05-29 | 2010-12-09 | Sanyo Electric Co Ltd | 半導体装置 |
JP2016092032A (ja) * | 2014-10-29 | 2016-05-23 | サンケン電気株式会社 | 半導体装置 |
JPWO2018123968A1 (ja) * | 2016-12-28 | 2019-10-31 | 株式会社ツーセル | 生体組織損傷の修復剤および当該修復剤の製造方法 |
KR20210035136A (ko) * | 2019-07-24 | 2021-03-31 | 주식회사 키 파운드리 | 채널 길이 조정이 용이한 반도체 소자 및 그 제조방법 |
US11322492B2 (en) | 2019-07-24 | 2022-05-03 | Key Foundry Co., Ltd. | Semiconductor device with controllable channel length and manufacturing method thereof |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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KR101418396B1 (ko) * | 2007-11-19 | 2014-07-10 | 페어차일드코리아반도체 주식회사 | 전력 반도체 소자 |
KR101800371B1 (ko) * | 2011-05-27 | 2017-11-23 | 삼성전자주식회사 | 반도체 장치 |
CN102637743B (zh) * | 2012-05-02 | 2015-04-29 | 杭州士兰微电子股份有限公司 | 一种功率器件及其制造方法 |
WO2014087600A1 (ja) * | 2012-12-04 | 2014-06-12 | 株式会社デンソー | 半導体装置およびその製造方法 |
US11049967B2 (en) * | 2018-11-02 | 2021-06-29 | Texas Instruments Incorporated | DMOS transistor having thick gate oxide and STI and method of fabricating |
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WO2009041741A1 (ja) * | 2007-09-28 | 2009-04-02 | Sanyo Electric Co., Ltd. | Dmosトランジスタ及びその製造方法 |
JP2009088189A (ja) * | 2007-09-28 | 2009-04-23 | Sanyo Electric Co Ltd | Dmosトランジスタ及びその製造方法 |
US8395210B2 (en) | 2007-09-28 | 2013-03-12 | Sanyo Semiconductor Co., Ltd. | DMOS transistor and method of manufacturing the same |
JP2009260155A (ja) * | 2008-04-21 | 2009-11-05 | Sanyo Electric Co Ltd | Dmosトランジスタ |
JP2010278312A (ja) * | 2009-05-29 | 2010-12-09 | Sanyo Electric Co Ltd | 半導体装置 |
JP2016092032A (ja) * | 2014-10-29 | 2016-05-23 | サンケン電気株式会社 | 半導体装置 |
JPWO2018123968A1 (ja) * | 2016-12-28 | 2019-10-31 | 株式会社ツーセル | 生体組織損傷の修復剤および当該修復剤の製造方法 |
KR20210035136A (ko) * | 2019-07-24 | 2021-03-31 | 주식회사 키 파운드리 | 채널 길이 조정이 용이한 반도체 소자 및 그 제조방법 |
KR102291317B1 (ko) * | 2019-07-24 | 2021-08-18 | 주식회사 키 파운드리 | 채널 길이 조정이 용이한 반도체 소자 및 그 제조방법 |
US11322492B2 (en) | 2019-07-24 | 2022-05-03 | Key Foundry Co., Ltd. | Semiconductor device with controllable channel length and manufacturing method thereof |
US11764216B2 (en) | 2019-07-24 | 2023-09-19 | Key Foundry Co., Ltd. | Semiconductor device with controllable channel length and manufacturing method thereof |
Also Published As
Publication number | Publication date |
---|---|
US20070057321A1 (en) | 2007-03-15 |
EP1763083A2 (en) | 2007-03-14 |
EP1763083B1 (en) | 2010-02-03 |
JP4791113B2 (ja) | 2011-10-12 |
CN1933179A (zh) | 2007-03-21 |
TWI315912B (ja) | 2009-10-11 |
CN100454580C (zh) | 2009-01-21 |
EP1763083A3 (en) | 2008-05-28 |
DE602006012106D1 (de) | 2010-03-25 |
TW200713580A (en) | 2007-04-01 |
KR20070030142A (ko) | 2007-03-15 |
KR100749230B1 (ko) | 2007-08-13 |
US7652307B2 (en) | 2010-01-26 |
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