JP2009158862A - 半導体パッケージ - Google Patents
半導体パッケージ Download PDFInfo
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- JP2009158862A JP2009158862A JP2007338199A JP2007338199A JP2009158862A JP 2009158862 A JP2009158862 A JP 2009158862A JP 2007338199 A JP2007338199 A JP 2007338199A JP 2007338199 A JP2007338199 A JP 2007338199A JP 2009158862 A JP2009158862 A JP 2009158862A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 68
- 239000000758 substrate Substances 0.000 claims abstract description 118
- 239000011229 interlayer Substances 0.000 claims abstract description 35
- 238000003384 imaging method Methods 0.000 claims abstract description 18
- 238000002161 passivation Methods 0.000 claims abstract description 15
- 238000005530 etching Methods 0.000 claims description 21
- 238000000034 method Methods 0.000 abstract description 44
- 229910000679 solder Inorganic materials 0.000 abstract description 21
- 238000012360 testing method Methods 0.000 abstract description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 85
- 229910052710 silicon Inorganic materials 0.000 description 85
- 239000010703 silicon Substances 0.000 description 85
- 239000010410 layer Substances 0.000 description 38
- 239000000853 adhesive Substances 0.000 description 17
- 230000001070 adhesive effect Effects 0.000 description 17
- 239000011521 glass Substances 0.000 description 17
- 230000015572 biosynthetic process Effects 0.000 description 16
- 230000035515 penetration Effects 0.000 description 14
- 239000004020 conductor Substances 0.000 description 13
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 12
- 238000001459 lithography Methods 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 10
- 239000011347 resin Substances 0.000 description 9
- 229920005989 resin Polymers 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
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- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000004380 ashing Methods 0.000 description 2
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- 238000009413 insulation Methods 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910017944 Ag—Cu Inorganic materials 0.000 description 1
- 229920001890 Novodur Polymers 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- 229910020816 Sn Pb Inorganic materials 0.000 description 1
- 229910020836 Sn-Ag Inorganic materials 0.000 description 1
- 229910020888 Sn-Cu Inorganic materials 0.000 description 1
- 229910020922 Sn-Pb Inorganic materials 0.000 description 1
- 229910020988 Sn—Ag Inorganic materials 0.000 description 1
- 229910019204 Sn—Cu Inorganic materials 0.000 description 1
- 229910008783 Sn—Pb Inorganic materials 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
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- 230000001681 protective effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
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- H01L23/00—Details of semiconductor or other solid state devices
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- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/023—Redistribution layers [RDL] for bonding areas
- H01L2224/0237—Disposition of the redistribution layers
- H01L2224/02372—Disposition of the redistribution layers connecting to a via connection in the semiconductor or solid-state body
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/1302—Disposition
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
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- H01L2224/13024—Disposition the bump connector being disposed on a redistribution layer on the semiconductor or solid-state body
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- Transforming Light Signals Into Electric Signals (AREA)
Abstract
【解決手段】半導体基板10に、第1の主面の撮像素子12と第2の主面のハンダボール25とを電気的に接続する貫通電極が形成されている。半導体基板10の第1の主面の貫通電極上に内部電極26が形成され、内部電極26上及び第1の主面上に層間絶縁膜13が形成されている。層間絶縁膜13上に素子面電極27が形成され、素子面電極27上及び層間絶縁膜13上に、素子面電極27の一部分が開口された開口部30を有するパッシベーション膜15が形成されている。さらに、半導体基板10面に垂直な方向から見て開口部30と重ならない領域において、素子面電極27と内部電極26との間にコンタクトプラグ28が形成されている。
【選択図】 図2
Description
まず、本発明の第1実施形態のカメラモジュールについて説明する。
次に、本発明の第2実施形態のカメラモジュールについて説明する。前記第1実施形態における構成と同様の部分には同じ符号を付してその説明は省略する。
次に、本発明の第3実施形態のカメラモジュールについて説明する。前記第1実施形態における構成と同様の部分には同じ符号を付してその説明は省略する。図13は、第3実施形態のカメラモジュールにおける貫通電極と電極パッド部分を拡大した断面図である。
Claims (5)
- 半導体基板の第1の主面に形成された撮像素子と、
前記半導体基板の前記第1の主面に対向する第2の主面上に形成された外部端子と、
前記半導体基板に空けられた貫通孔に形成され、前記第1の主面の前記撮像素子と前記第2の主面の前記外部電極とを電気的に接続する貫通電極と、
前記半導体基板の前記第1の主面の前記貫通電極上に形成された第1の電極パッドと、
前記第1の電極パッド上及び前記半導体基板の前記第1の主面上に形成された層間絶縁膜と、
前記層間絶縁膜上に形成された第2の電極パッドと、
前記第2の電極パッド上及び前記層間絶縁膜上に形成され、前記第2の電極パッドの一部分が開口された開口部を有するパッシベーション膜と、
前記半導体基板面に垂直な方向から見て前記開口部と重ならない領域において、前記第2の電極パッドと前記第1の電極パッドとの間に接続形成されたコンタクトプラグと、
を具備することを特徴とする半導体パッケージ。 - 半導体基板の第1の主面に形成された撮像素子と、
前記半導体基板の前記第1の主面に対向する第2の主面上に形成された外部端子と、
前記半導体基板に空けられた貫通孔に形成され、前記第1の主面の前記撮像素子と前記第2の主面の前記外部電極とを電気的に接続する貫通電極と、
前記半導体基板の前記第1の主面の前記貫通電極上に形成された第1の電極パッドと、
前記第1の電極パッド上及び前記半導体基板の前記第1の主面上に形成された層間絶縁膜と、
前記層間絶縁膜上に形成された第2の電極パッドと、
前記半導体基板面に垂直な方向から見て前記貫通電極と重ならない領域において、前記第2の電極パッドと前記第1の電極パッドとの間に接続形成されたコンタクトプラグと、
を具備することを特徴とする半導体パッケージ。 - 前記第1の電極パッドと前記第2の電極パッドとの間の前記層間絶縁膜内に形成された第3の電極パッドをさらに具備することを特徴とする請求項1または2に記載の半導体パッケージ。
- 前記撮像素子に対応するように配置されたカラーフィルタと、
前記撮像素子に対応するように、前記カラーフィルタ上に配置されたマイクロレンズと、
をさらに具備することを特徴とする請求項1または2に記載の半導体パッケージ。 - 前記第1の電極パッドは、前記半導体基板に前記貫通電極を形成する際に、前記層間絶縁膜をエッチングしないためのストッパー膜であり、
前記第2の電極パッドは、ダイソートにおいて針が接触される電極パッドであることを特徴とする請求項1または2に記載の半導体パッケージ。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007338199A JP4799542B2 (ja) | 2007-12-27 | 2007-12-27 | 半導体パッケージ |
EP08868487A EP2179444A4 (en) | 2007-12-27 | 2008-12-19 | SEMICONDUCTOR PACKAGE WITH CONTINUOUS ELECTRODE AND A LIGHT-TRANSMITTING SUBSTRATE |
PCT/JP2008/073882 WO2009084700A1 (en) | 2007-12-27 | 2008-12-19 | Semiconductor package including through-hole electrode and light-transmitting substrate |
KR1020097017810A KR101033078B1 (ko) | 2007-12-27 | 2008-12-19 | 스루홀 전극과 투광 기판을 포함하는 반도체 패키지 |
TW097150521A TWI387083B (zh) | 2007-12-27 | 2008-12-24 | 包含貫穿孔電極與光傳輸基板的半導體封裝 |
US12/508,293 US7808064B2 (en) | 2007-12-27 | 2009-07-23 | Semiconductor package including through-hole electrode and light-transmitting substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007338199A JP4799542B2 (ja) | 2007-12-27 | 2007-12-27 | 半導体パッケージ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009158862A true JP2009158862A (ja) | 2009-07-16 |
JP4799542B2 JP4799542B2 (ja) | 2011-10-26 |
Family
ID=40824413
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007338199A Expired - Fee Related JP4799542B2 (ja) | 2007-12-27 | 2007-12-27 | 半導体パッケージ |
Country Status (6)
Country | Link |
---|---|
US (1) | US7808064B2 (ja) |
EP (1) | EP2179444A4 (ja) |
JP (1) | JP4799542B2 (ja) |
KR (1) | KR101033078B1 (ja) |
TW (1) | TWI387083B (ja) |
WO (1) | WO2009084700A1 (ja) |
Cited By (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011029491A (ja) * | 2009-07-28 | 2011-02-10 | Toshiba Corp | 半導体装置およびその製造方法 |
WO2011114581A1 (ja) | 2010-03-17 | 2011-09-22 | 住友精密工業株式会社 | 成膜方法 |
JP2011238674A (ja) * | 2010-05-07 | 2011-11-24 | Seiko Epson Corp | 配線基板、圧電発振器、ジャイロセンサー、配線基板の製造方法 |
CN102683323A (zh) * | 2011-03-11 | 2012-09-19 | 索尼公司 | 半导体器件及其制造工艺以及电子装置 |
JP2013089816A (ja) * | 2011-10-19 | 2013-05-13 | Toshiba Corp | 半導体装置及びその製造方法 |
US8471392B2 (en) | 2010-02-15 | 2013-06-25 | Olympus Corporation | Semiconductor apparatus and endoscope apparatus |
JP2013258428A (ja) * | 2013-08-29 | 2013-12-26 | Lapis Semiconductor Co Ltd | 半導体装置および半導体装置の製造方法 |
JP2014086596A (ja) * | 2012-10-24 | 2014-05-12 | Olympus Corp | 半導体装置、撮像装置、半導体基板の検査方法及び半導体装置の製造方法 |
US8754494B2 (en) | 2010-09-21 | 2014-06-17 | Kabushiki Kaisha Toshiba | Image sensing device including through vias electrically connecting imaging lens unit to image sensors |
WO2015093017A1 (en) | 2013-12-19 | 2015-06-25 | Sony Corporation | Semiconductor device, method of manufacturing semiconductor device, and electronic apparatus |
WO2015107849A1 (ja) * | 2014-01-14 | 2015-07-23 | 株式会社フジクラ | 半導体装置、及び撮像モジュール |
JP2015165544A (ja) * | 2014-03-03 | 2015-09-17 | 株式会社デンソー | 受光チップ |
JP2016509374A (ja) * | 2013-03-01 | 2016-03-24 | アーエムエス アクチエンゲゼルシャフトams AG | 輻射線検出用半導体素子及び輻射線検出用半導体素子の製造方法 |
JP2016225478A (ja) * | 2015-05-29 | 2016-12-28 | 株式会社東芝 | 半導体装置および半導体装置の製造方法 |
JP2016225474A (ja) * | 2015-05-29 | 2016-12-28 | 株式会社東芝 | 半導体装置の製造方法および半導体装置 |
JP2016225471A (ja) * | 2015-05-29 | 2016-12-28 | 株式会社東芝 | 半導体装置および半導体装置の製造方法 |
US9892968B2 (en) | 2008-07-10 | 2018-02-13 | Lapis Semiconductor Co., Ltd. | Semiconductor device having a dummy portion, method for manufacturing the semiconductor device, method for manufacturing a semiconductor package having the semiconductor device |
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JP4799542B2 (ja) | 2011-10-26 |
EP2179444A1 (en) | 2010-04-28 |
US7808064B2 (en) | 2010-10-05 |
TW200937605A (en) | 2009-09-01 |
WO2009084700A1 (en) | 2009-07-09 |
EP2179444A4 (en) | 2013-03-20 |
US20090283847A1 (en) | 2009-11-19 |
KR101033078B1 (ko) | 2011-05-06 |
KR20090104127A (ko) | 2009-10-05 |
TWI387083B (zh) | 2013-02-21 |
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